CN108074953A - Organic light-emitting display device and its manufacturing method - Google Patents

Organic light-emitting display device and its manufacturing method Download PDF

Info

Publication number
CN108074953A
CN108074953A CN201710816005.5A CN201710816005A CN108074953A CN 108074953 A CN108074953 A CN 108074953A CN 201710816005 A CN201710816005 A CN 201710816005A CN 108074953 A CN108074953 A CN 108074953A
Authority
CN
China
Prior art keywords
layer
pixel
conductive layer
film
display device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201710816005.5A
Other languages
Chinese (zh)
Other versions
CN108074953B (en
Inventor
姜泰旭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Display Co Ltd
Original Assignee
Samsung Display Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Display Co Ltd filed Critical Samsung Display Co Ltd
Publication of CN108074953A publication Critical patent/CN108074953A/en
Application granted granted Critical
Publication of CN108074953B publication Critical patent/CN108074953B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/824—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80521—Cathodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80522—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/221—Changing the shape of the active layer in the devices, e.g. patterning by lift-off techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

The present invention relates to organic light-emitting display device and its manufacturing methods.A kind of organic light-emitting display device includes：Substrate；The first conductive layer being arranged on substrate；The pixel restriction film that ceiling substrate determines multiple pixels is arranged in, pixel limits at least a portion that film exposes the first conductive layer for each pixel in multiple pixels；It is arranged in the organic luminous layer limited by pixel at least a portion that film exposed of the first conductive layer；The second conductive layer being arranged on organic luminous layer；It arranges on the second conductive layer in each pixel in multiple pixels and exposes at least part of protective layer of the second conductive layer；And it is arranged in the conducting layer on the pixel restriction film between multiple pixels, the partial electrical contact exposed of second conductive layer of the conducting layer with arrangement in a plurality of pixels.

Description

Organic light-emitting display device and its manufacturing method
Cross reference to related applications
This application claims the korean patent application submitted on November 15th, 2016 priority of No. 10-2016-0151626 And rights and interests, here, for all purposes, being incorporated herein the korean patent application by quoting, such as fully explain herein It states the same.
Technical field
Exemplary embodiment is related to organic light-emitting display device and its manufacturing method.
Background technology
Organic light-emitting display device is the display device of self-luminous type, and therefore, is filled different from such as liquid crystal display The display device for the light-receiving type put, is not required back light unit.Therefore, organic light-emitting display device is used for various frivolous electricity The sub- product of gas-to-electric, smart phone, ultra-thin TV etc..
Traditionally, be used to realize height to deposit the method for organic illuminating element by using the photo-patterning of photomask Resolution ratio.
However, the peeling layer used in photo-patterning includes expensive special material, and the technique for removing peeling layer Deposited organic layer may be damaged.
In the information above disclosed in the background section only for enhancing the understanding to the background of inventive concept, And therefore it can include and not be formed in the state for the information of the prior art known to persons of ordinary skill in the art.
The content of the invention
Exemplary embodiment provides a kind of organic light-emitting display device and its manufacturing method, the organic light-emitting display device It can prevent or reduce extraneous air or the damage of generated physics and chemical affect to organic luminous layer during technique.
In terms of in next detailed description by illustrating additional, and partly will from the disclosure it is clear that or Person can be by the practice of inventive concept and acquistion.
Accoding to exemplary embodiment, a kind of organic light-emitting display device can include：Substrate；First be arranged on substrate Conductive layer；The pixel restriction film that ceiling substrate determines multiple pixels is arranged in, pixel limits film for every in multiple pixels One pixel exposes at least a portion of the first conductive layer；It is arranged in film is limited by pixel being exposed at least for the first conductive layer Organic luminous layer in a part；The second conductive layer being arranged on organic luminous layer；Arrange each picture in multiple pixels In element, on the second conductive layer and exposure the second conductive layer at least part of protective layer；And be arranged in multiple pixels it Between pixel limit conducting layer on film, the portion exposed of conducting layer and arrangement the second conductive layer in a plurality of pixels Divide electrical contact.
The protective layer being arranged in each pixel can not be in contact with each other.
The second conductive layer being arranged in each pixel can not be in direct contact with one another.
Organic luminous layer can be limited film, the first conductive layer and conducting layer by protective layer, pixel and surround and close.
Protective layer can include inorganic material.
Conducting layer can be not arranged at least a portion of protective layer.
Pixel, which limits film, to be included：First layer including organic material and including inorganic material and cover first layer The second layer.
Accoding to exemplary embodiment, a kind of organic light-emitting display device can include：Substrate；First be arranged on substrate Conductive layer；The pixel restriction film that ceiling substrate determines at least one pixel is arranged in, pixel limits film at least one pixel At least a portion of middle the first conductive layer of exposure；Be arranged in the first conductive layer limits at least a portion that film exposed by pixel On organic luminous layer；The second conductive layer being arranged on organic luminous layer；Each picture being arranged at least one pixel In element, on the second conductive layer and exposure the second conductive layer at least part of protective layer；And it is arranged at least one picture The partial electrical contact exposed of the conducting layer of the outside of each pixel in element, conducting layer and the second conductive layer.
At least a portion of protective layer can be contacted with conducting layer.
Organic light-emitting display device may further include the colour filter being arranged between protective layer and conducting layer.
Accoding to exemplary embodiment, a kind of method for manufacturing organic light-emitting display device can include：Prepare substrate, first Conductive layer and pixel limit film and are located on the substrate, and pixel limits film and limits multiple pixels and for each in multiple pixels A pixel exposes the first conductive layer；It is limited in pixel and photoresist pattern is arranged on film, photoresist pattern includes exposure The opening of the first pixel in multiple pixels；By first material layer arrange in the whole surface of substrate simultaneously to arrange：Position In the organic luminous layer in the part that film is limited by pixel and is exposed of the first conductive layer and positioned at photoresist pattern On the first sedimentary；By second material layer arrange in the whole surface of substrate simultaneously to arrange：Positioned at organic luminous layer On the second conductive layer and the second sedimentary in the first sedimentary；By the entire of the 3rd material layer arrangement to substrate Simultaneously to arrange on surface：Protective layer on the second conductive layer and the 3rd sedimentary in the second sedimentary； And remove photoresist pattern and the first sedimentary, the second sedimentary and the 3rd sedimentary.
At least a portion of protective layer can limit film with pixel and contact.
The first conductive layer and organic luminous layer can be completely covered in protective layer.
Organic luminous layer can be limited film by protective layer, pixel and the first conductive layer is surrounded and closed.
Photoresist pattern can have the shape of back taper.
Photoresist pattern can be formed by patterning negative photoresist synthetic.
Photoresist pattern can be by using the stripping technology of stripper to remove.
The method of manufacture organic light-emitting display device may further include after photoresist pattern is removed：More Organic luminous layer, the second conductive layer and protective layer are arranged in the second pixel in a pixel；Etch first in a plurality of pixels Pixel and a part for the protective layer in the second pixel are with second in the first pixel and the second pixel in the multiple pixels of exposure A part for conductive layer；And formed conducting layer be electrically connected in the first pixel and the second pixel in multiple pixels second The part exposed of conductive layer.
Front be broadly described and it is described in detail below be exemplary and explanatory, and be intended to provide to being asked The theme of protection is explained further.
Description of the drawings
Included attached drawing provides further understanding and be incorporated into specification and form explanation to inventive concept A part for book, attached drawing illustrate the exemplary embodiment of inventive concept, and with the creative structure that lays down a definition together with specification The principle of think of.
Fig. 1 is the schematic plan view of organic light-emitting display device accoding to exemplary embodiment.
Fig. 2 is the sectional view along the organic light-emitting display device of the hatching II-II ' interceptions of Fig. 1.
Fig. 3, Fig. 4 and Fig. 5 are the sectional views of organic light-emitting display device accoding to exemplary embodiment.
Fig. 6, Fig. 7, Fig. 8, Fig. 9, Figure 10, Figure 11, Figure 12, Figure 13, Figure 14, Figure 15, Figure 16, Figure 17, Figure 18, Figure 19, figure 20 and Figure 21 is the sectional view of the method for the organic light-emitting display device for illustrating manufacture Fig. 2 and Fig. 3 accoding to exemplary embodiment.
Figure 22, Figure 23 and Figure 24 are the organic light-emitting display devices for illustrating manufacture Fig. 4 and Fig. 5 accoding to exemplary embodiment Method sectional view.
Specific embodiment
In the following description, for purposes of explanation, a large amount of details are illustrated, so as to provide to various exemplary implementations The deep understanding of example.It it will, however, be evident that can be without these details or with one or more equivalent settings In the case of put into practice various exemplary embodiments.In other cases, well-known structure and device are shown in the form of a block diagram, So as to avoid making various exemplary embodiments unnecessarily indigestion.
In the accompanying drawings, for purpose that is clear and describing, the size in layer, film, panel, region etc. and opposite ruler can be exaggerated It is very little.Moreover, identical reference numeral represents identical element.
When element or layer be referred to as another element or layer " on ", " being connected to " or " being coupled to " another element or during layer, It can directly on another element or layer, be directly connected or coupled to another element or layer or there may be intermediary element Or interlayer.However, when element or layer be referred to as " directly existing " another element or layer " on ", " being connected directly to " or " direct coupling It is connected to " another element or during layer, there is no intermediary element or interlayers.For the purpose of the displosure, " at least one in X, Y and Z It is a " and " at least one in the group being made of X, Y and Z " can be interpreted only X, only Y, only Z or X, Two or more any combination, such as XYZ, XYY, YZ and ZZ in Y and Z.Throughout, identical reference numeral refers to identical Element.As it is used herein, term "and/or" includes the arbitrary and institute of one or more of associated Listed Items There is combination.
Although various elements, component, region, layer and/or portion can be described using term " first ", " second " etc. herein Point, but these elements, component, region, layer and/or part should not be limited by these terms.These terms are used for one Element, component, region, layer and/or part are distinguished with another element, component, region, layer and/or part.Therefore, exist In the case of the introduction for not departing from the disclosure, first element discussed below, component, region, layer and/or part can be referred to as second Element, component, region, layer and/or part.
For purposes of description, herein can use spatially relative term, such as " under ", " lower section ", " lower part ", " on Side ", " top " etc., and it is used for describing an element as illustrated in the accompanying drawings or feature as a result, compared with another (a little) first The relation of part or feature.In addition to the orientation described in attached drawing, spatially relative term be intended to comprising in use, operation neutralize/ Or the different azimuth of the equipment in manufacture.For example, if the equipment in attached drawing is reversed, be described as being located at other elements or The element of feature " below " or " under " can be positioned as being located at other elements or feature " top ".Therefore, exemplary term " under Side " can include both the orientation of " top " and the orientation of " lower section ".Moreover, equipment can also have other orientation (for example, rotation 90 Spend or in other orientation), and thus can correspondingly understand spatial relative descriptor used herein.
Terms used herein is to describe the purpose of specific embodiment, and is not intended to be limited to.As used herein , singulative " one " and "the" are intended to also include plural form, unless clearly dictating otherwise within a context.Moreover, work as During in this specification, term " comprising " and/or "comprising" specify discussed feature, integer, step, operation, element, The presence of component and/or its group, but be not excluded for other one or more features, integer, step, operation, element, component and/ Or the presence or addition of its group.
Various exemplary embodiments are described herein by reference to sectional view, these sectional views are Utopian exemplary embodiments And/or the schematical diagram of intermediate structure.As such, the shape of the diagram generated due to such as manufacturing technology and/or tolerance Variation is contemplated that.Therefore, exemplary embodiments disclosed herein should not be construed as limited to the area of certain illustrative Domain shape, but the deviation in shape including generating when for example manufacturing.For example, the injection zone for being illustrated as triangle is usual By with round or curved feature and/or its edge have implantation concentration gradient rather than from the region of injection to The binary variation in non-implanted region.Similarly, embedded region can be caused with being injected by injecting the embedded region formed Surface between region in some injection.Therefore, region illustrated in the drawings is in fact schematical, also, its shape Shape is not intended to the true form in graphic display unit region and is not intended to be limited to.
Unless otherwise defined, belonging to the meaning and the disclosure of all terms (including technical and scientific term) used herein The normally understood meaning of those of ordinary skill is identical in field.Unless explicitly define herein, it is otherwise fixed such as in universaling dictionary Those terms of justice should be interpreted as having the meaning consistent with the meaning in association area context, and should not be with ideal Change or excessively formal meaning explains it.
Fig. 1 is the schematic plan view of organic light-emitting display device accoding to exemplary embodiment.
With reference to Fig. 1, organic light-emitting display device can include the display area DA of image display on it in plan view, with And image does not appear in non-display area NA thereon.It is aobvious to be surrounded outside the DA of display area that non-display area NA can be formed Show region DA.
Multiple pixel PX are arranged on matrix shape in the DA of display area.Each pixel PX can include sending the first color Light the first pixel PX1, send the second color light the second pixel PX2 and send the 3rd color light the 3rd pixel PX3.Accoding to exemplary embodiment, it is red, green and blueness respectively that Fig. 1, which illustrates the first color, the second color and the 3rd color,.
The water that multiple pixel PX cause the first pixel PX1, the second pixel PX2 and the 3rd pixel PX3 in plane can be configured It square is alternately arranged upwards, and the pixel for sending the light of same color is continuously provided in the vertical direction of plane.So And exemplary embodiment is without being limited thereto.
Fig. 2 is the sectional view along the organic light-emitting display device of the hatching II-II ' interceptions of Fig. 1.
With reference to Fig. 2, organic light-emitting display device can include basal substrate 101, buffer layer 110, active layer 121, grid Insulating layer 140, gate electrode 151, interlayer insulating film 160, source electrode 172, drain electrode 173, planarization layer 180 and organic light emission Element 200.
Basal substrate 101 can be insulated substrate.Basal substrate 101 can include at least one of glass and plastics. Basal substrate 101 can be transparent, and can be wrapped when it is applied to the organic light-emitting display device of positive emission type Include opaque material.
Accoding to exemplary embodiment, in order to enable organic light-emitting display device is flexible, basal substrate 101 can be by all Flexible material such as polyimides is made.
Buffer layer 110 can be arranged on basal substrate 101.Buffer layer 110 can include silicon nitride (SiNX), silica (SiOX) and silicon oxynitride (SiOXNYAt least one of), and can be single-layer or multi-layer.Buffer layer 110 can prevent or It reduces the infiltration of the impurity, moisture and/or extraneous air that can cause characteristic of semiconductor degeneration and surface planarisation can be made.
Active layer 121 is arranged on buffer layer 110.Active layer 121 can include semiconductor, and can be by polysilicon system Into.
Active layer 121 can include channel region 123 and the source region 122 adjacent with the both sides of channel region 123 and drain region 124.Channel region 123 can include intrinsic semiconductor, be the polysilicon undoped with impurity, and source region 122 and drain region 124 can To be made of extrinsic semiconductor, they are the polysilicons doped with conductive impurity.
Gate insulator 140 can be arranged on active layer 121.Gate insulator 140 can include silicon nitride, oxidation The insulating layer of at least one of silicon and silicon oxynitride, and can be single-layer or multi-layer.
Gate electrode 151 can be arranged on gate insulator 140.Gate electrode 151 can be arranged to the ditch with active layer 121 Road area 123 is overlapped.The source region 122 of active layer 121 and drain region 124 can not be overlapped with gate electrode 151.Gate electrode 151 can wrap At least one of aluminium (Al), molybdenum (Mo), copper (Cu) and its alloy are included, and there can be multilayered structure.
Interlayer insulating film 160 can be arranged on gate electrode 151.Interlayer insulating film 160 can include silicon nitride, oxidation The insulating layer of at least one of silicon and silicon oxynitride, and can be single-layer or multi-layer.
Source electrode 172 and drain electrode 173 can be arranged on interlayer insulating film 160.Source electrode 172 can be arranged to and have The source region 122 of active layer 121 is overlapped, and drain electrode 173 can be arranged to it is be overlapped with the drain region of active layer 121 124.
Each in source electrode 172 and drain electrode 173 can include aluminium (Al), molybdenum (Mo), chromium (Cr), tantalum (Ta), titanium (Ti), at least one of other refractory metals and its alloy, and can have multilayered structure.
Source contact openings 161 and drain contact hole 162 can be formed in gate insulator 140 and interlayer insulating film 160, Source electrode 172 and drain electrode 173 to be electrically connected respectively with the source region of active layer 121 122 and drain region 124.
Active layer 121, gate electrode 151, source electrode 172 and drain electrode 173 may be constructed thin film transistor (TFT) T.Film crystal Gate electrode 151, source electrode 172 and the drain electrode 173 of pipe T are the control terminal, input terminal and output of thin film transistor (TFT) T respectively Terminal.
Each pixel PX can include at least one or more thin film transistor (TFT) T.Thin film transistor (TFT) T can be with organic light emission Element 200 is electrically connected to control the driving of organic illuminating element 200.
Planarization layer 180 can be arranged in source electrode 172 and drain electrode 173.Planarization layer 180 can include nitridation Silicon, silica, silicon oxynitride, acrylic acid organic compound, benzocyclobutene (BCB) and the perfluor ring fourth with low-k At least one of alkane (PFCB).
Planarization layer 180 can protect source electrode 172 and drain electrode 173 and planarize their upper surface.Contact Hole 181 is formed in planarization layer 180, exposes drain electrode 173 to pass through planarization layer 180.
Organic illuminating element 200 can be arranged on planarization layer 180, and can include the first conductive layer 210, pixel Film 220, organic luminous layer 230, the second conductive layer 240, clad 250, protective layer 260, conducting layer 270 and son is limited to protect Sheath 280.
First conductive layer 210 can be arranged in for each pixel PX on planarization layer 180.First conductive layer 210 can be with By the contact hole 181 that is formed in planarization layer 180 and the electric leakage with the thin film transistor (TFT) T arranged for each pixel PX Pole 173 is electrically connected.First conductive layer 210 can be the pixel electrode or anode electrode of organic illuminating element 200.
First conductive layer 210 can include the conductive material with high work function.For example, the first conductive layer 210 can wrap Include at least one transparent conductive material, transparent conductive material such as tin indium oxide (ITO), transparent conductive oxide (TCO), oxidation Indium zinc (IZO), zinc oxide (ZnO) and indium oxide (III) (In2O3).In addition, the first conductive layer 210 can include comprising more than The transparency conducting layer of transparent conductive material is with including such as lithium (Li), calcium (Ca), aluminium (Al), silver-colored (Ag), magnesium (Mg) and gold (Au) At least one of reflective metal conductive material layer stacked film.
Pixel limits film 220 and can be arranged on planarization layer 180, to cover a part for the first conductive layer 210.Pixel Each pixel PX of organic illuminating element 200 can be limited by limiting film 220.Pixel, which limits film 220, can include the first opening H1, At least a portion of the first conductive layer 210 in each pixel PX is arranged in for exposure.
Pixel limits film 220 and can be formed by multilayer, including including such as acyclic compound, polyimides (PI), benzene And it the first layer 221 of at least one of organic material of cyclobutane (BCB) and Freon C318 (PFCB) and is arranged to Cover the second layer 222 comprising inorganic material of first layer 221.The second layer 222 that pixel limits film 220 can be formed as covering The side wall and pixel of first opening H1 limit the upper surface of the first layer 221 of film 220.
Pixel including organic material, which limits film 220, to prevent during the technique of the first opening H1 is formed by patterning Only or reduce the damage for the first conductive layer 210 and manufacturing process can be simplified.However, air and/or moisture can be worn Pixel restriction film 220 is crossed to infiltrate into organic luminous layer 230.Thus, the second layer 222 including inorganic layer can be prevented or reduced Air and/or moisture infiltration are into organic luminous layer 230.
The second layer 222 that pixel limits film 220 can include such as silicon nitride (SiNX), silica (SiOX) and nitrogen oxidation Silicon (SiOXNY) at least one of inorganic material, and can be arranged to that the first layer that pixel limits film 220 is completely covered 221 upper surface.
Organic luminous layer 230 can be arranged on the first conductive layer 210 exposed by the first opening H1.Organic light emission Layer 230 can be formed by multilayer, which includes luminescent layer and hole injection layer, hole transmission layer, electron transfer layer and electricity At least one or more in sub- implanted layer.
Organic luminous layer 230 can be limited by protective layer 260, pixel the second layer 222 of film 220, the first conductive layer 210 with And conducting layer 270 is surrounded and completely enclosed, protective layer 260, pixel limit the second layer 222, the first conductive layer 210 of film 220 And each in conducting layer 270 is made of inorganic material.Therefore, it can be effectively prevented or reduce foreign matter and/or wet Impervious is into organic luminous layer 230.
The organic luminous layer 230 being arranged in the first pixel PX1, the second pixel PX2 and the 3rd pixel PX3 can be sent out respectively Go out the light of red, green and blueness.
Second conductive layer 240 can be arranged on organic luminous layer 230.Second conductive layer 240 can cover pixel restriction A part for the upper surface of film 220.
Second conductive layer 240 can include the conductive material with low work function.For example, the second conductive layer 240 can wrap Include such as lithium (Li), calcium (Ca), LiF/Ca, LiF/Al, aluminium (Al), magnesium (Mg), silver-colored (Ag), platinum (Pt), palladium (Pd), nickel (Ni), Golden (Au), neodymium (Nd), iridium (Ir), chromium (Cr), barium fluoride (BaF), barium (Ba), the metal of ytterbium (Yb), its compound or mixture At least one of, and such as ITO, TCO, IZO, ZnO and In can also be included2O3Transparent conductive material at least one Kind.
In the exemplary embodiment, the second conductive layer 240 can be include at least one of Ag and Mg thin metal layer, The multilayer that transparent conductive film including TCO or wherein thin metal layer and transparent conductive film are stacked.Therefore, lead from being arranged in second The light that the organic luminous layer 230 of 240 lower section of electric layer is sent can be to pass through the second conductive layer 240.However, exemplary embodiment is unlimited In this.
Second conductive layer 240 can be discontinuously disposed at the shape on island in the first opening H1 of each pixel PX.Cause And the second conductive layer 240 being arranged in each pixel PX can not be in direct contact with one another.Be arranged in each pixel PX Two conductive layers 240 can be the cathode electrode of organic illuminating element 200, and can be electrically connected by conducting layer 270 Public electrode.
Clad 250 can be arranged on the second conductive layer 240.Clad 250 can improve the light of organic luminous layer 230 Extraction efficiency, and organic luminous layer 230 can be protected to influence from plasma when patterning organic illuminating element 200. Accoding to exemplary embodiment, it is convenient to omit clad 250.
Protective layer 260 can be arranged on clad 250.When omitting clad 250, protective layer 260 can direct cloth It puts on the second conductive layer 240.
Protective layer 260 can be arranged to the element that encapsulation includes the lower section of organic luminous layer 230, and can prevent or subtract It is few that damage of the formed photoresist to organic luminous layer 230 is removed during patterning organic illuminating element 200.Cause And by arranging protective layer 260, it is convenient to omit expensive peeling layer.Further, it is a kind of when being formed in any one pixel PX When organic luminous layer 230 then forms another organic luminous layer 230 in another pixel PX, protective layer 260 can protect institute The organic luminous layer 230 of formation is from the influence of external impact, etachable material and/or extraneous air.
Protective layer 260 can be arranged over the second conductive layer 240 and clad 250, and the second conductive layer 240 of exposure A part.Specifically, the exterior portion of the second conductive layer 240 it is a part of can be exposed and be not protected layer 260 cover Lid, and the second conductive layer 240 can be electrically connected by the part exposed with conducting layer 270.
Protective layer 260 can be arranged in each pixel PX.Therefore, the protective layer 260 being arranged in each pixel PX can To be arranged to not be in contact with each other.
Protective layer 260 can include such as silicon nitride (SiNX), silica (SiOX) and silicon oxynitride (SiOXNY) it is inorganic At least one of material.
Conducting layer 270 can be arranged in the pixel between each pixel PX and limit on film 220.Therefore, conducting layer 270 The outside of any one pixel PX can be arranged in.The exposed portion of the second conductive layer 240 of conducting layer 270 and adjacent pixel PX Tap is touched, and thus the second conductive layer 240 being arranged in different pixels PX is electrically connected to each other.
In the exemplary embodiment, conducting layer 270 can be arranged to filling in plan view with lattice shape division Space or border between multiple pixel PX, and the second conduction being arranged in each pixel PX that can be arranged to partly overlap The part exposed of layer 240.The part of overlapping can wherein 270 and second conductive layer 240 of conducting layer be in contact with each other Part.
Conducting layer 270 can be arranged over pixel and limit the surface of film 220 and the second conductive layer 240, clad 250 and protective layer 260 side surface at least a portion.Conducting layer 270 can be not arranged at least one of protective layer 260 On point.For example, conducting layer 270 can be not arranged in a part for the protective layer 260 Chong Die with pixel PX regions.Into one Step, conducting layer 270 can not be overlapped with organic luminous layer 230.
Conducting layer 270 may be embodied in the material that can be included in the second conductive layer 240, and can be by being led with second The identical material of electric layer 240 is made.Since conducting layer 270 is not arranged at what the light sent from organic luminous layer 230 was passed through On path, therefore conducting layer 270 can be formed as thicker than the second conductive layer 240.
Sub- protective layer 280 can be arranged on protective layer 260 with protective mulch 260 and conducting layer 270.Sub- protective layer 280 can supplement the function of protective layer 260, and can include protective layer 260 material or can by with protective layer 260 Identical material is made.It can be omitted sub- protective layer 280.
Since organic light-emitting display device accoding to exemplary embodiment includes limiting film 220 by protective layer 260, pixel The organic luminous layer 230 that the second layer 222, the first conductive layer 210 and conducting layer 270 are surrounded and completely enclosed, therefore can have Effect prevents or reduces foreign matter and/or moisture infiltration into organic luminous layer 230.
Further, it is possible to organic hair is encapsulated by the protective layer 260 being arranged separately in each pixel for each pixel Photosphere 230, and therefore, caused damage or defect can not shadows in the organic luminous layer 230 of arrangement in one pixel Ring the organic luminous layer 230 being arranged in other pixels.
Fig. 3 is the sectional view of organic light-emitting display device accoding to exemplary embodiment.
Except sub- protective layer 281 be arranged to only protective mulch 260 without cover conducting layer 271 in addition to, Fig. 3's is organic Luminous display unit is substantially the same with illustrated organic light-emitting display device in Fig. 2.Hereinafter, retouching for redundancy will be omitted It states.
With reference to Fig. 3, sub- protective layer 281 can be arranged on protective layer 260 with protective mulch 260.Conducting layer 271 can It is limited with being arranged in pixel on film 220, to cover the second conductive layer 240, clad 250, protective layer 260 and sub- protective layer 281 Side surface at least a portion.
Since the organic light-emitting display device shown in Fig. 3 includes the second layer that film 220 is limited by protective layer 260, pixel 222nd, the organic luminous layer 230 that the first conductive layer 210 and conducting layer 271 are surrounded and completely enclosed, therefore can be effectively Foreign matter and/or moisture infiltration are prevented or reduced into organic luminous layer 230.Further, it is possible to for each pixel by independently The 260 encapsulating organic light emitting layer 230 of protective layer of arrangement in each pixel, and therefore, in arrangement having in one pixel Caused damage or defect can not influence the organic luminous layer being arranged in other pixels 230 in machine luminescent layer 230.
Further, sub- protective layer 281 is directly arranged on protective layer 260, and therefore, organic luminous layer 230 can have There is the protection of enhancing.
Fig. 4 is the sectional view of organic light-emitting display device accoding to exemplary embodiment.
Except colour filter 310, conducting layer 272, sub- protective layer 282 and black matrix 320 are sequentially laminated in protective layer 260 Outside upper, the organic light-emitting display device of Fig. 4 is substantially the same with illustrated organic light-emitting display device in Fig. 2.Below In, the description of redundancy will be omitted.
With reference to Fig. 4, colour filter 310 can be arranged on protective layer 260.Colour filter 310 can be according to from being arranged under it The wavelength of light that the organic luminous layer 230 of side is sent and selectively transmit the organic luminous layer 230 from arrangement thereunder The light sent.
Colour filter 310 can be divided into the first colour filter for corresponding respectively to the first color, the second color and the 3rd color Device 311, the second colour filter 312 and the 3rd colour filter 313, and the first pixel PX1, the second pixel PX2 can be arranged in In the 3rd pixel PX3.
Conducting layer 272 can be arranged on colour filter 310.Different from conducting layer 270 shown in Fig. 2, subconductivity Layer 272 can continuously be arranged to cover pixel restriction film 220, the second conductive layer 240, clad 250, protective layer 260 and filter The surface of all exposures of color device 310.
Sub- protective layer 282 can be arranged on conducting layer 272 to cover conducting layer 272.
Black matrix 320 can be arranged on the sub- protective layer 282 between pixel PX.Black matrix 320 can be guided from organic The light that luminescent layer 230 is sent is only to emit to the region for being limited to each pixel PX.Further, black matrix 320 is also possible to prevent Or it reduces and exterior light is reflected by the conducting layer 272 between pixel PX.
Since the organic light-emitting display device shown in Fig. 4 includes the second layer that film 220 is limited by protective layer 260, pixel 222nd, the organic luminous layer 230 that the first conductive layer 210 and conducting layer 272 are surrounded and completely enclosed, therefore can be effective Ground prevents or reduces foreign matter and/or moisture infiltration into organic luminous layer 230.Further, it is possible to for each pixel by independence The 260 encapsulating organic light emitting layer 230 of protective layer of ground arrangement in each pixel, and therefore, in arrangement in one pixel Caused damage or defect can not influence the organic luminous layer being arranged in other pixels 230 in organic luminous layer 230.
Fig. 5 is the sectional view of organic light-emitting display device accoding to exemplary embodiment.
In addition to sub- protective layer 283 is arranged in black matrix 321, schemed in the organic light-emitting display device and Fig. 4 of Fig. 5 The organic light-emitting display device shown is substantially the same.Hereinafter, the description of redundancy will be omitted.
With reference to Fig. 5, black matrix 321 can be arranged on the conducting layer 272 between pixel PX, and sub- protective layer 283 It can be arranged in black matrix 321 to cover black matrix 321 and conducting layer 272.
Since the organic light-emitting display device shown in Fig. 5 includes the second layer that film 220 is limited by protective layer 260, pixel 222nd, the organic luminous layer 230 that the first conductive layer 210 and conducting layer 272 are surrounded and completely enclosed, therefore can be effective Ground prevents or reduces foreign matter and/or moisture infiltration into organic luminous layer 230.Further, it is possible to for each pixel by independence The 260 encapsulating organic light emitting layer 230 of protective layer of ground arrangement in each pixel, and therefore, in arrangement in one pixel The damage occurred in organic luminous layer 230 or defect can not influence the organic luminous layer being arranged in other pixels 230.
Further, since sub- protective layer 283 is arranged over black matrix 321, black matrix 321 can also be protected to avoid The infiltration of moisture, extraneous air or foreign matter.
Hereinafter, will the illustrative methods for manufacturing organic light-emitting display device accoding to exemplary embodiment be described.
Fig. 6, Fig. 7, Fig. 8, Fig. 9, Figure 10, Figure 11, Figure 12, Figure 13, Figure 14, Figure 15, Figure 16, Figure 17, Figure 18, Figure 19, figure 20 and Figure 21 is the sectional view of the method for the organic light-emitting display device for illustrating manufacture Fig. 2 and Fig. 3 accoding to exemplary embodiment.
With reference to Fig. 6, buffer layer 110, active layer 121, gate insulator 140, gate electrode 151, interlayer insulating film 160, source Electrode 172, drain electrode 173,180 and first conductive layer 210 of planarization layer are arranged on basal substrate 101.It is any traditional Method can be used for illustrated element in layout drawing 6.
With reference to Fig. 7, the pixel of the first opening H1 including the first conductive layer 210 of exposure limits film 220 and is arranged in planarization On layer 180.Specifically, included by being stacked in acyclic compound, polyimides (PI), benzocyclobutene (BCB) at least A kind of organic film that organic film and patterning is stacked and form the first layer 221 that pixel limits film 220.Then, pass through Being stacked includes such as silicon nitride (SiNX), silica (SiOX), silicon oxynitride (SiOXNY) at least one of inorganic material Inoranic membrane that inoranic membrane and patterning are stacked and limited in pixel and pixel is formed on the first layer 221 of film 220 limit film 220 The second layer 222.
Then, with reference to Fig. 8, the first photoresist pattern 510 is arranged in pixel and limits on film 220.It can be by by light Resist synthetic is caused to apply to limit on film 220 to cover pixel restriction film 220 and first opening H1 to pixel and then scheme Case photoresist synthetic and form the first photoresist pattern 510.Can by alignment mask, by photoresist Synthetic exposes and then patterns photoresist synthesis using the photoresist synthetic of developer exposure Object.
The first photoresist pattern 510 can be formed to limit the second opening H2, the second opening H2 exposures are to pixel PX The region that is defined of a part.Therefore, the first photoresist pattern 510 can be formed in the multiple pixel PX of exposure Some pixels simultaneously cover other pixels and element.With reference to Fig. 8, photoresist pattern 510 is formed with only exposure with sending first The corresponding regions of the first pixel PX1 of the light of color and cover other regions.
The first photoresist pattern 510 can be formed with reverse tapered shapes.In the exemplary embodiment, Ke Yitong It crosses patterning negative photoresist synthetic and forms the first photoresist pattern 510, in order to reverse tapered shapes. However, exemplary embodiment is without being limited thereto.
With reference to Fig. 9, then, by the second opening H2, organic luminous layer 230 is formed in the exposed by the first opening H1 On one conductive layer 210.It can be by such as depositing organic luminous layer 230 using the method for the method of evaporating of crucible.
Can by by the second opening H2 and first the first conductive layers 210 for being exposed of opening H1 deposition include it is organic First deposition materials of luminescent material and form organic luminous layer 230.It can be performed by the deposited overall without using mask The deposition of first deposition materials.Therefore, the first deposition materials are not only deposited to the part exposed by the second opening H2, and And be also deposited on the first photoresist pattern 510, in order to form the first sedimentary 610.
Organic luminous layer 230 can by depositing light emitting layer and hole injection layer, hole transmission layer, electron transfer layer and At least one in electron injecting layer and be formed as multilayer, and several deposition materials can be used to deposit with upper strata.Phase Ying Di, the first sedimentary 610 can also be formed as multilayer.
With reference to Figure 10, then, by the second opening H2, the second conductive layer 240 is formed on organic luminous layer 230.
Can by using the various methods including sputtering method, physical vapour deposition (PVD) (PVD) method, electro-plating method etc. and Second deposition materials are applied on by the second organic luminous layers 230 for being exposed of opening H2 to form the second conductive layer 240, the Two deposition materials include at least one of metal and transparent conductive material, metal such as Ag, Mg, Al and Yb, electrically conducting transparent material Expect such as ITO, IZO and TCO.
The method for forming the second conductive layer 240 can be isotropic method.Therefore, the second conductive layer 240 can be with shape As the area with than the second opening H2 biggers, and it can be formed as covering upper surface and the picture of organic luminous layer 230 Element limits the side surface of film 220 and a part for upper surface.
The deposition of second deposition materials can also be the deposited overall without using separation mask.Therefore, the second deposition materials It is not only deposited on the part exposed by the second opening H2, but also is deposited on and is formed at the first photoresist pattern In the first sedimentary 610 on 510, in order to form the second sedimentary 620.
With reference to Figure 11, then, by the second opening H2, clad 251 is formed on the second conductive layer 240.It can pass through The 3rd deposition materials are deposited on the second conductive layer 240 exposed by the second opening H2 and form clad 251.
The formation of clad 251 can be isotropic deposition technique.Therefore, clad 251 can be formed as have than The area of second opening H2 biggers, and can be formed as covering the upper surface of the second conductive layer 240 and pixel restriction film 220 Upper surface a part.
However, exemplary embodiment is without being limited thereto, and according to process conditions, clad 251 can be formed as only covering A part for the upper surface of second conductive layer 240.
3rd deposition materials are not only deposited on the part exposed by the second opening H2, but also are deposited on and are formed at In the second sedimentary 620 on first photoresist pattern 510, in order to form the 3rd sedimentary 630.
The step of forming clad 251 can be omitted.Therefore, protective layer 261 can be directly formed at the second conductive layer On 240.
With reference to Figure 12, then, by the second opening H2, protective layer 261 is formed on clad 251.When omission clad When 251, protective layer 261 can be formed on the second conductive layer 240.
It can be protected by depositing the 4th deposition materials on by the second clads 251 for being exposed of opening H2 to be formed Layer 261, the 4th deposition materials include such as silicon nitride (SiNX), silica (SiOX) or silicon oxynitride (SiOXNY) inorganic material At least one of material.
The deposition of 4th deposition materials can be isotropism technique.Therefore, protective layer 261 can be formed as having than the The area of two opening H2 biggers, and can be formed as covering upper surface and the pixel of the second conductive layer 240 and clad 251 Limit a part for the upper surface of film 220.
4th deposition materials are not only deposited on the part exposed by the second opening H2, but also are deposited on and are formed at In the 3rd sedimentary 630 on first photoresist pattern 510, in order to form the 4th sedimentary 640.
Protective layer 261 can be formed as that organic luminescent layer 230 is completely covered and is arranged in the second of 261 lower section of protective layer to lead Electric layer 240.Specifically, the outside of protective layer 261 can be formed as contacting to prevent from exposing organic light emission with pixel restriction film 220 Layer 230 and the second conductive layer 240 for being arranged in 261 lower section of protective layer.
With reference to Figure 13, then, the first photoresist pattern 510 is removed.The first photoresist pattern 510 is removed, and And it therefore can also remove the first sedimentary 610 being formed on the first photoresist pattern 510, the second sedimentary 620, Three sedimentaries 630 and the 4th sedimentary 640.
It can be by the stripping technology of stripper be used to remove the first photoresist pattern 510.When the first photoresist When pattern 510 has reverse tapered shapes, stripping technology can be easily performed.
It, can be with when the second conductive layer 240, clad 251 and protective layer 261 are deposited by chemical vapor deposition (CVD) The second conductive layer 240, clad 251 and protective layer 261 are discontinuously formed without with being formed in the first photoresist pattern The second sedimentary 620, the 3rd sedimentary 630 and the 4th sedimentary 640 on 510 connect, and therefore can be easily performed Stripping technology.
However, exemplary embodiment is without being limited thereto.Even if pass through atomic layer deposition, the second conductive layer 240, clad 251 It can also discontinuously be formed with the second sedimentary 620, the 3rd sedimentary 630 and the 4th sedimentary 640 with protective layer 261, and And it therefore can be easily performed stripping technology.
Figure 14 is the sectional view for showing to remove the method for the first photoresist pattern 510 accoding to exemplary embodiment.
The area exposed with reference to Figure 14, the second opening H2 for forming the second photoresist pattern 520 to fill by Figure 12 Domain.Second photoresist pattern 520 can be formed as being higher than the first photoresist pattern 510.
The first photoresist pattern 510 and the second opening H2 can be covered by applying photoresist synthetic simultaneously And it is subsequently patterned photoresist synthetic and forms the second photoresist pattern 520.
Second photoresist pattern 520 can be formed as with conical by its shape.In the exemplary embodiment, can pass through It patterns positive photoresist synthetic and forms the second photoresist pattern 520, in order to conical by its shape.So And exemplary embodiment is without being limited thereto.
The first photoresist pattern 510 in the region not formed in the second photoresist pattern 520 can be first It removes, and the second photoresist pattern 520 can be removed then, in order to form the state shown in Figure 13.
First photoresist pattern 510 and the second photoresist pattern 520 can include can be by different from each other The material that stripper removes.However, exemplary embodiment is without being limited thereto, and the first photoresist pattern 510 and the second light Cause Resist patterns 520 that can include the material that can be removed by identical stripper.
In the exemplary embodiment, it is made of dry etching removal of inorganic material and is formed in the first photoresist The second sedimentary 620, the 3rd sedimentary 630 and the 4th sedimentary 640 on pattern 510, and then moved by wet etching Except the first sedimentary 610 and the first photoresist pattern 510 and the second photoresist pattern 520.However, exemplary reality It is without being limited thereto to apply example, and it is possible to select any kind of removing method in any suitable order, such as dry etching, wet Method etches and ashing.
Second photoresist pattern 520 is formed in by the second pixel PX regions for being exposed of opening H2 and then quilt It removes, thus prevents from damaging such as organic hair being arranged in pixel PX regions when removing the first photoresist pattern 510 The element of photosphere 230 and protective layer 261.
Figure 15 is the sectional view for showing to remove the method for the first photoresist pattern 510 accoding to exemplary embodiment.
With reference to Figure 15, the second photoresist pattern 521 is formed in the opening H2 of Figure 12.Second photoresist pattern 521 can be formed as being less than the first photoresist pattern 510.
The first photoresist pattern 510 and the second opening H2 can be covered by applying photoresist synthetic simultaneously And then before development photoresist synthetic and form the second photoresist pattern 521.Current development photoresist closes During into object, the photoresist synthetic on the first photoresist pattern 510 is removed, and is formed in the second opening H2 In the second photoresist pattern 521 can be formed as being less than the first photoresist pattern 510.
Then, the first photoresist pattern 510 and the second photoresist pattern 521 are removed, in order to form Figure 13 Shown in state.
In the exemplary embodiment, the first photoresist pattern 510 and the second photoresist pattern 521 can include The material that can be removed by identical stripper.However, exemplary embodiment is without being limited thereto, and the first photoresist pattern 510 and second photoresist pattern 521 can include can by stripper different from each other remove material.
In the exemplary embodiment, with given order, the second sedimentary 620, the 3rd sedimentary 630 and the 4th sedimentary 640 can be removed by dry etching, and the first photoresist pattern 510 and the first sedimentary 610 can be moved by the first stripper It removes, and subsequent second photoresist pattern 521 can be removed by the second stripper different from the first stripper.Therefore, Can prevent or reduce can during technique the large volume inorganic particle of blocking filter generation.
With reference to Figure 16, with it is illustrated in Fig. 6, Fig. 7, Fig. 8, Fig. 9, Figure 10, Figure 11, Figure 12, Figure 13, Figure 14 and Figure 15 Same way forms organic luminous layer 230, the second conductive layer 240, clad 251 and protection in remaining pixel PX regions Layer 261.
The second pixel PX2 that the light for sending the second color is formed in upper strata is shown in FIG. 16 and sends the 3rd color Light the 3rd pixel PX3 in.Organic luminous layer 230 in second pixel PX2 and the 3rd pixel PX3 can be sent with difference The light for the wavelength that organic luminous layer in the first pixel PX1 is sent.
The protective layer 261 of 230 and second conductive layer 240 of organic luminous layer is completely covered by arrangement, it can formed During the subsequent technique of the organic illuminating element 200 of his pixel PX, the organic luminous layer 230 arranged before protecting is from outside The influence of air, foreign matter or the physics occurred during technique and chemical affect etc..Organic luminous layer 230 is by organic hair First conductive layer 210 of 230 times side-lowers of photosphere, the pixel on 230 side of organic luminous layer limit film 220 and are having Protective layer 261 on 230 upside of machine luminescent layer surrounds, therefore can completely enclose organic luminous layer 230.
With reference to Figure 17, then, the 3rd photoresist pattern 530 is formed on protective layer 261.3rd photoresist figure Case 530 can be formed as the outside of not protective mulch 261.Therefore, in the outside of 261 and second conductive layer 240 of protective layer Some can not be overlapped with the 3rd photoresist pattern 530.
3rd photoresist pattern 530 can have reverse tapered shapes.Because form the 3rd photoresist pattern 530 Method with formed the first photoresist pattern 510 method description that is substantially the same, therefore redundancy will being omitted.
With reference to Figure 18, then, clad 251 and protective layer 261 are etched at least one of the second conductive layer 240 of exposure Point.Specifically, the photic not with the 3rd in the outside of the second conductive layer 240 of clad 251 and protective layer 261 can be etched The part that Resist patterns 530 is overlapped.
With reference to Figure 19, then, the conducting layer 270 of the part exposed of arrangement the second conductive layer 240 of electrical connection.
Conducting layer 270 can be by the second conductive layer 240 of second conductive layer 240 and each pixel PX of a pixel PX Electrical connection, in order to be used as public electrode.
Film can be limited by being applied the 5th deposition materials to pixel by sputtering, physical vapour deposition (PVD) (PVD), plating etc. 220 and second conductive layer 240 the part exposed on and form conducting layer 270, the 5th deposition materials include metal and thoroughly At least one of bright conductive material, metal such as Ag, Mg, Al and Yb, transparent conductive material such as ITO, IZO or TCO.
Conducting layer 270 can be formed in pixel and limit on film 220 with be arranged in pixel PX different from each other second The part exposed the contact of conductive layer 240, and can also partly be contacted with clad 250 and protective layer 260.
Be formed in due to conducting layer 270 in the region between pixel PX, without limit pixel PX region in, therefore Conducting layer 270 can be formed as thicker than the second conductive layer 240.
5th deposition materials are uniformly distributed on the 3rd photoresist pattern 530, in order to form the 5th sedimentary 650。
With reference to Figure 20, then, the 3rd photoresist pattern 530 is removed.With the shifting of the 3rd photoresist pattern 530 It removes, the 5th sedimentary 650 being formed on the 3rd photoresist pattern 530 can also be removed.
It can be by the stripping technology of stripper be used to remove the 3rd photoresist pattern 530.When the 3rd photoresist When pattern 530 has reverse tapered shapes, stripping technology can be easily performed.However, exemplary embodiment is without being limited thereto, and As shown in Figure 21, the 4th photoresist pattern 540 with conical by its shape can also be used.
Then, sub- protective layer 280 is formed, in order to manufacture organic light-emitting display device shown in Fig. 2.Further, It can be filled by inverting the formation order of conducting layer 270 and sub- protective layer 280 to manufacture the organic light emitting display shown in Fig. 3 It puts.
Figure 22, Figure 23 and Figure 24 are the organic light-emitting display devices for illustrating manufacture Fig. 4 and Fig. 5 accoding to exemplary embodiment Method sectional view.
With reference to Figure 22, colour filter 310 is formed on the protective layer 261 of Figure 16.Colour filter 310 can be formed as not covering guarantor The outside of 261 and second conductive layer 240 of sheath.Therefore, some in the outside of 261 and second conductive layer 240 of protective layer can be with It is not be overlapped with colour filter 310.
Colour filter 310 can include the first colour filter 311, the second colour filter 312 and the 3rd colour filter 313, the first colour filter Device 311, the second colour filter 312 and the 3rd colour filter 313 are directed in the first pixel PX1, the second pixel PX2 and the 3rd pixel PX3 Each filter the first color, the second color and the 3rd color respectively.
With reference to Figure 23, then, clad 251 and protective layer 261 are etched at least one of the second conductive layer 240 of exposure Point.Specifically, can etch clad 251 and protective layer 261 in 240 outside of the second conductive layer not with colour filter 310 The part of overlapping.
With reference to Figure 24, then, formed to connect the conducting layer 272 of the part exposed of the second conductive layer 240.
Different from the 3rd photoresist pattern 530 and the 4th photoresist pattern 540, due to not removing colour filter respectively Device 310, therefore different from the conducting layer 270 of Figure 20, conducting layer 272 can be continuously formed to cover pixel restriction film 220th, the surface of all exposures of the second conductive layer 240, clad 250, protective layer 260 and colour filter 310.
Then, sub- protective layer 282 or 283 and black matrix 320 or 321 are formed on conducting layer 272, in order to manufacture Organic light-emitting display device shown in Fig. 4 or Fig. 5.
Exemplary embodiment can have the following effects that.
Organic light-emitting display device accoding to exemplary embodiment can include protective layer, to prevent or reduce by external empty The damage of physics and chemical shock to organic luminous layer caused by gas or manufacturing process.
In addition, organic light-emitting display device accoding to exemplary embodiment can include being connected electrically in the work to form protective layer The conducting layer of second conductive layer of each pixel disconnected in skill.
Although there have been described herein some exemplary embodiments and realization method, according to this specification, other implementations Example and modification are apparent.Therefore, inventive concept is not limited to these embodiments, but be defined in presented claim with And the wide range of various obvious modifications and equivalent setting.

Claims (20)

1. a kind of organic light-emitting display device, including：
Substrate；
First conductive layer, the first conductive layer arrangement is on the substrate；
Pixel limits film, and the pixel restriction film is arranged in the ceiling substrate and determines multiple pixels, and the pixel limits film At least a portion of first conductive layer is exposed for each pixel in the multiple pixel；
Organic luminous layer, what the organic luminous layer was arranged in first conductive layer limits the institute that film exposed by the pixel It states at least a portion；
Second conductive layer, second conductive layer are arranged on the organic luminous layer；
Protective layer, the protective layer are arranged in each pixel in the multiple pixel, on second conductive layer, and At least a portion of exposure second conductive layer；And
Conducting layer, the conducting layer are arranged in the pixel between the multiple pixel and limit on film, the subconductivity Layer and the partial electrical contact exposed for second conductive layer being arranged in the multiple pixel.
2. organic light-emitting display device according to claim 1, wherein, it is arranged in the protective layer in each pixel not It is in contact with each other.
3. organic light-emitting display device according to claim 1, wherein, described second be arranged in each pixel is conductive Layer is not in direct contact with one another.
4. organic light-emitting display device according to claim 1, wherein, the organic luminous layer is by the protective layer, institute Pixel restriction film, first conductive layer and the conducting layer is stated to surround and close.
5. organic light-emitting display device according to claim 1, wherein, the protective layer includes inorganic material.
6. organic light-emitting display device according to claim 1, wherein, the conducting layer is not arranged at the protective layer At least a portion on.
7. organic light-emitting display device according to claim 1, wherein, the pixel, which limits film, to be included：
First layer including organic material；And
Including inorganic material and cover the second layer of the first layer.
8. a kind of organic light-emitting display device, including：
Substrate；
First conductive layer, the first conductive layer arrangement is on the substrate；
Pixel limits film, and the pixel restriction film is arranged in the ceiling substrate and determines at least one pixel, the pixel limit Determine at least a portion of film exposure first conductive layer at least one pixel；
Organic luminous layer, what the organic luminous layer was arranged in first conductive layer limits the institute that film exposed by the pixel It states at least a portion；
Second conductive layer, second conductive layer are arranged on the organic luminous layer；
Protective layer, the protective layer are arranged in each pixel at least one pixel, on second conductive layer, And at least a portion of exposure second conductive layer；And
Conducting layer, the conducting layer is arranged in the outside of each pixel at least one pixel, described The partial electrical contact exposed of conducting layer and second conductive layer.
9. organic light-emitting display device according to claim 8, wherein, the organic luminous layer is by the protective layer, institute Pixel restriction film, first conductive layer and the conducting layer is stated to surround and close.
10. organic light-emitting display device according to claim 8, wherein, the conducting layer is not arranged at the protection In at least a portion of layer.
11. organic light-emitting display device according to claim 8, wherein, at least a portion of the protective layer with it is described Conducting layer contacts.
12. organic light-emitting display device according to claim 8, further comprises：
Colour filter, the colour filter are arranged between the protective layer and the conducting layer.
13. a kind of method for manufacturing organic light-emitting display device, including：
Substrate is prepared, the first conductive layer and pixel limit film and be located on the substrate, and the pixel limits film and limits multiple pixels And expose first conductive layer for each pixel in the multiple pixel；
It is limited in the pixel and photoresist pattern is arranged on film, the photoresist pattern includes the multiple picture of exposure The opening of the first pixel in element；
By first material layer arrange in the whole surface of the substrate simultaneously to arrange：
Organic luminous layer, the organic luminous layer are located at one for being limited film by the pixel of first conductive layer and being exposed Point on and
First sedimentary, first sedimentary are located on the photoresist pattern；
By second material layer arrange in the whole surface of the substrate simultaneously to arrange：
Second conductive layer, second conductive layer are located on the organic luminous layer；And
Second sedimentary, second sedimentary are located in first sedimentary；
By in the whole surface of the 3rd material layer arrangement to the substrate simultaneously to arrange：
Protective layer, the protective layer be located on second conductive layer and
3rd sedimentary, the 3rd sedimentary are located in second sedimentary；And
Remove the photoresist pattern and first sedimentary, second sedimentary and the 3rd sedimentary.
14. according to the method for claim 13, wherein, at least a portion of the protective layer limits film with the pixel and connects It touches.
15. according to the method for claim 13, wherein, the protective layer is completely covered first conductive layer and described has Machine luminescent layer.
16. according to the method for claim 13, wherein, the organic luminous layer is limited by the protective layer, the pixel Film and first conductive layer are surrounded and closed.
17. according to the method for claim 13, wherein, the photoresist pattern has reverse tapered shapes.
18. according to the method for claim 17, wherein, the photoresist pattern is by patterning negativity photoresist Agent synthetic and formed.
19. according to the method for claim 13, wherein, the photoresist pattern is by using the stripping technology of stripper It removes.
20. according to the method for claim 13, further comprise after the photoresist pattern is removed：
Organic luminous layer, the second conductive layer and protective layer are arranged in the second pixel in the multiple pixel；
A part for first pixel in the multiple pixel and the protective layer in second pixel is etched with sudden and violent Reveal a part for second conductive layer in first pixel and second pixel in the multiple pixel；And
Conducting layer is formed to be electrically connected described the in first pixel and second pixel in the multiple pixel The part exposed of two conductive layers.
CN201710816005.5A 2016-11-15 2017-09-12 Organic light emitting display device and method of manufacturing the same Active CN108074953B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2016-0151626 2016-11-15
KR1020160151626A KR20180054983A (en) 2016-11-15 2016-11-15 Organic light emitting display device and manufacturing method thereof

Publications (2)

Publication Number Publication Date
CN108074953A true CN108074953A (en) 2018-05-25
CN108074953B CN108074953B (en) 2024-03-08

Family

ID=59294989

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710816005.5A Active CN108074953B (en) 2016-11-15 2017-09-12 Organic light emitting display device and method of manufacturing the same

Country Status (5)

Country Link
US (3) US10374020B2 (en)
EP (2) EP3321988B1 (en)
JP (1) JP7063548B2 (en)
KR (2) KR20180054983A (en)
CN (1) CN108074953B (en)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107546246A (en) * 2017-07-24 2018-01-05 武汉华星光电半导体显示技术有限公司 Flexible OLED display part and preparation method
CN109285843A (en) * 2018-07-16 2019-01-29 友达光电股份有限公司 Display device
CN110581226A (en) * 2019-09-12 2019-12-17 云谷（固安）科技有限公司 flexible display panel, preparation method thereof and flexible display device
CN110610974A (en) * 2019-09-20 2019-12-24 昆山工研院新型平板显示技术中心有限公司 Display panel, manufacturing method thereof and display terminal
CN110808275A (en) * 2019-11-15 2020-02-18 昆山工研院新型平板显示技术中心有限公司 Display panel, preparation method thereof and display device
CN111200083A (en) * 2018-11-19 2020-05-26 三星显示有限公司 Method for forming light emitting element pattern and display device
CN111384105A (en) * 2018-12-31 2020-07-07 乐金显示有限公司 Organic light emitting display device
CN111403440A (en) * 2020-03-20 2020-07-10 京东方科技集团股份有限公司 Display panel, preparation method and display device
CN112993189A (en) * 2021-02-09 2021-06-18 京东方科技集团股份有限公司 Light-emitting device and manufacturing method thereof
CN113196516A (en) * 2018-12-17 2021-07-30 三星显示有限公司 Organic light emitting display device and method for manufacturing organic light emitting display device

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20180054983A (en) * 2016-11-15 2018-05-25 삼성디스플레이 주식회사 Organic light emitting display device and manufacturing method thereof
JP2018129471A (en) * 2017-02-10 2018-08-16 株式会社Ｊｏｌｅｄ Organic electroluminescent panel and light emitting device
KR102300028B1 (en) * 2017-06-08 2021-09-09 삼성디스플레이 주식회사 Manufacturing method of organic light emitting display device
CN109103215B (en) * 2017-06-21 2021-03-09 京东方科技集团股份有限公司 Organic light emitting diode display panel, manufacturing method thereof and display device
US20190027709A1 (en) * 2017-07-24 2019-01-24 Wuhan China Star Optoelectronics Semiconducter Display Technology Co., Ltd. Method for manufacturing flexible organic light emitting diode(oled) display device
WO2019221364A1 (en) 2018-05-14 2019-11-21 주식회사 엘지화학 Polyimide film for flexible display device substrate having excellent heat dissipation characteristics
CN108735791A (en) * 2018-07-05 2018-11-02 云谷（固安）科技有限公司 Display panel and its manufacturing method and display terminal
CN110783492A (en) * 2018-07-27 2020-02-11 株式会社日本有机雷特显示器 Light emitting display device and method of manufacturing the same
CN109192875B (en) * 2018-09-04 2021-01-29 京东方科技集团股份有限公司 Back plate and manufacturing method thereof, display substrate and manufacturing method thereof and display device
KR20200056528A (en) 2018-11-14 2020-05-25 삼성디스플레이 주식회사 Pattern part, method for forming pattern prat and method for manufacturing display device using the same
CN109860239B (en) * 2018-12-13 2021-03-16 武汉华星光电半导体显示技术有限公司 Array substrate, manufacturing method thereof and display device
CN110034166B (en) 2019-03-26 2022-09-09 武汉华星光电半导体显示技术有限公司 Organic light emitting diode display device and method of fabricating the same
KR20210070667A (en) * 2019-12-05 2021-06-15 엘지디스플레이 주식회사 Display Device And Method Of Fabricating The Same
US20220165995A1 (en) * 2020-11-25 2022-05-26 Applied Materials, Inc. Selective filler patterning by lithography for oled light extraction
KR20230124623A (en) * 2020-12-24 2023-08-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 display device
US20240049560A1 (en) * 2020-12-25 2024-02-08 Semiconductor Energy Laboratory Co., Ltd. Display apparatus, electronic device, and method for manufacturing display apparatus
KR20230141798A (en) * 2021-02-03 2023-10-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Manufacturing method of display device
KR20240035551A (en) * 2021-07-21 2024-03-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Display device and method of manufacturing the display device
JPWO2023002297A1 (en) * 2021-07-21 2023-01-26
WO2023119995A1 (en) * 2021-12-24 2023-06-29 株式会社ジャパンディスプレイ Display device
KR20230113463A (en) * 2022-01-21 2023-07-31 삼성디스플레이 주식회사 Display device and manufacturing method for the same
US20240147825A1 (en) * 2022-10-26 2024-05-02 Applied Materials, Inc. Pixel defining encapsulating barrier for rgb color patterning

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005316412A (en) * 2004-03-31 2005-11-10 Nippon Zeon Co Ltd Radiation-sensitive resin composition
CN101330095A (en) * 2007-06-19 2008-12-24 三星Sdi株式会社 Organic light emitting display and method of manufacturing the same
JP2011124212A (en) * 2009-12-10 2011-06-23 Samsung Mobile Display Co Ltd Organic light-emitting display device and its manufacturing method
JP2011238597A (en) * 2010-05-07 2011-11-24 Samsung Mobile Display Co Ltd Organic light-emitting display device and method of manufacturing the same
JP2012178336A (en) * 2010-12-28 2012-09-13 Semiconductor Energy Lab Co Ltd Light-emitting unit, light-emitting device, illumination device, and manufacturing method for light-emitting unit
EP2744008A1 (en) * 2012-12-12 2014-06-18 Boe Technology Group Co. Ltd. Array substrate, method for fabricating the same, and OLED display device
US20140166999A1 (en) * 2012-12-18 2014-06-19 Jong Yun Kim Display device and method for fabricating the same
KR20140137740A (en) * 2013-05-23 2014-12-03 엘지디스플레이 주식회사 Organec light emitting diode display device and method of manufacturing the same
WO2016019273A1 (en) * 2014-08-01 2016-02-04 Orthogonal, Inc. Photolithographic patterning of organic electronic devices
CN105552101A (en) * 2014-10-22 2016-05-04 三星显示有限公司 Organic light-emitting display apparatus
JP2016076453A (en) * 2014-10-08 2016-05-12 株式会社ジャパンディスプレイ Display device and manufacturing method thereof
KR20160061564A (en) * 2014-11-21 2016-06-01 삼성디스플레이 주식회사 Organic light emitting diode display device and method manufacturing of the same
US20160248039A1 (en) * 2015-02-24 2016-08-25 Samsung Display Co., Ltd. Organic light emitting display device and method of manufacturing the same

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5094697A (en) * 1989-06-16 1992-03-10 Canon Kabushiki Kaisha Photovoltaic device and method for producing the same
JPH08148279A (en) * 1994-11-24 1996-06-07 Nippondenso Co Ltd Manufacture of el element
US6013538A (en) * 1997-11-24 2000-01-11 The Trustees Of Princeton University Method of fabricating and patterning OLEDs
JP4706287B2 (en) 2005-03-11 2011-06-22 セイコーエプソン株式会社 Organic EL device and electronic device
JP5160754B2 (en) * 2006-01-31 2013-03-13 エルジー ディスプレイ カンパニー リミテッド EL device
JP2008098148A (en) * 2006-09-14 2008-04-24 Canon Inc Organic light-emitting device
WO2008069162A1 (en) * 2006-12-05 2008-06-12 Semiconductor Energy Laboratory Co., Ltd. Anti-reflection film and display device
US7915111B2 (en) * 2007-08-08 2011-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with high-K/dual metal gate
JP2012009699A (en) 2010-06-25 2012-01-12 Sanyo Electric Co Ltd Solar cell and method for manufacturing the same
WO2012128342A1 (en) 2011-03-24 2012-09-27 三洋電機株式会社 Solar cell panel, solar cell module and method for producing solar cell module
JP5640948B2 (en) 2011-10-18 2014-12-17 三菱電機株式会社 Solar cell
ES2592165T3 (en) 2011-11-22 2016-11-28 Kaneka Corporation Solar cell, its manufacturing method, and solar cell module
JP6194493B2 (en) 2012-03-30 2017-09-13 株式会社ブイ・テクノロジー Thin film pattern forming method
KR102020805B1 (en) 2012-12-28 2019-09-11 엘지디스플레이 주식회사 Transparent organic light emitting display device and method for manufacturing the same
KR102017118B1 (en) 2013-01-03 2019-09-03 삼성디스플레이 주식회사 Organic light emitting device and method of manufacturing the same
KR102083983B1 (en) * 2013-05-29 2020-03-04 삼성디스플레이 주식회사 Organic light emitting display apparatus and method of manufacturing the same
KR102089248B1 (en) 2013-09-23 2020-03-16 엘지디스플레이 주식회사 Organic Light Emitting Diode Device And Method Of Fabricating The Same
JP2015149467A (en) 2014-01-10 2015-08-20 株式会社Ｊｏｌｅｄ Manufacturing method of thin film transistor substrate
JP2016039241A (en) 2014-08-07 2016-03-22 株式会社Ｊｏｌｅｄ Thin film transistor element manufacturing method, organic el display panel manufacturing method, etching device and wet etching method
KR102421582B1 (en) 2015-02-24 2022-07-18 삼성디스플레이 주식회사 Organic light emitting display device and manufacturing method of the same
KR102456183B1 (en) * 2015-04-23 2022-10-18 엘지디스플레이 주식회사 Organic light emitting display device and fabricating method thereof
US9673210B1 (en) * 2016-02-25 2017-06-06 Globalfoundries Inc. Semiconductor structure including a nonvolatile memory cell having a charge trapping layer and method for the formation thereof
KR102491880B1 (en) * 2016-06-16 2023-01-27 삼성디스플레이 주식회사 Organic light emitting display and manufacturing method thereof
KR20180054983A (en) * 2016-11-15 2018-05-25 삼성디스플레이 주식회사 Organic light emitting display device and manufacturing method thereof

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005316412A (en) * 2004-03-31 2005-11-10 Nippon Zeon Co Ltd Radiation-sensitive resin composition
CN101330095A (en) * 2007-06-19 2008-12-24 三星Sdi株式会社 Organic light emitting display and method of manufacturing the same
JP2011124212A (en) * 2009-12-10 2011-06-23 Samsung Mobile Display Co Ltd Organic light-emitting display device and its manufacturing method
JP2011238597A (en) * 2010-05-07 2011-11-24 Samsung Mobile Display Co Ltd Organic light-emitting display device and method of manufacturing the same
JP2012178336A (en) * 2010-12-28 2012-09-13 Semiconductor Energy Lab Co Ltd Light-emitting unit, light-emitting device, illumination device, and manufacturing method for light-emitting unit
EP2744008A1 (en) * 2012-12-12 2014-06-18 Boe Technology Group Co. Ltd. Array substrate, method for fabricating the same, and OLED display device
US20140166999A1 (en) * 2012-12-18 2014-06-19 Jong Yun Kim Display device and method for fabricating the same
KR20140137740A (en) * 2013-05-23 2014-12-03 엘지디스플레이 주식회사 Organec light emitting diode display device and method of manufacturing the same
WO2016019273A1 (en) * 2014-08-01 2016-02-04 Orthogonal, Inc. Photolithographic patterning of organic electronic devices
JP2016076453A (en) * 2014-10-08 2016-05-12 株式会社ジャパンディスプレイ Display device and manufacturing method thereof
CN105552101A (en) * 2014-10-22 2016-05-04 三星显示有限公司 Organic light-emitting display apparatus
KR20160061564A (en) * 2014-11-21 2016-06-01 삼성디스플레이 주식회사 Organic light emitting diode display device and method manufacturing of the same
US20160248039A1 (en) * 2015-02-24 2016-08-25 Samsung Display Co., Ltd. Organic light emitting display device and method of manufacturing the same

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107546246A (en) * 2017-07-24 2018-01-05 武汉华星光电半导体显示技术有限公司 Flexible OLED display part and preparation method
CN109285843A (en) * 2018-07-16 2019-01-29 友达光电股份有限公司 Display device
CN109285843B (en) * 2018-07-16 2021-04-30 友达光电股份有限公司 Display device
CN111200083A (en) * 2018-11-19 2020-05-26 三星显示有限公司 Method for forming light emitting element pattern and display device
CN113196516A (en) * 2018-12-17 2021-07-30 三星显示有限公司 Organic light emitting display device and method for manufacturing organic light emitting display device
CN111384105B (en) * 2018-12-31 2023-08-11 乐金显示有限公司 Organic light emitting display device
CN111384105A (en) * 2018-12-31 2020-07-07 乐金显示有限公司 Organic light emitting display device
US11594695B2 (en) 2018-12-31 2023-02-28 Lg Display Co., Ltd. Organic light emitting display device
CN110581226A (en) * 2019-09-12 2019-12-17 云谷（固安）科技有限公司 flexible display panel, preparation method thereof and flexible display device
CN110581226B (en) * 2019-09-12 2022-03-22 云谷（固安）科技有限公司 Flexible display panel, preparation method thereof and flexible display device
CN110610974A (en) * 2019-09-20 2019-12-24 昆山工研院新型平板显示技术中心有限公司 Display panel, manufacturing method thereof and display terminal
CN110808275A (en) * 2019-11-15 2020-02-18 昆山工研院新型平板显示技术中心有限公司 Display panel, preparation method thereof and display device
CN111403440A (en) * 2020-03-20 2020-07-10 京东方科技集团股份有限公司 Display panel, preparation method and display device
CN111403440B (en) * 2020-03-20 2023-04-25 京东方科技集团股份有限公司 Display panel, preparation method and display device
CN112993189A (en) * 2021-02-09 2021-06-18 京东方科技集团股份有限公司 Light-emitting device and manufacturing method thereof

Also Published As

Publication number Publication date
JP7063548B2 (en) 2022-05-09
EP3321988B1 (en) 2023-04-12
US10374020B2 (en) 2019-08-06
US10636853B2 (en) 2020-04-28
KR20230021050A (en) 2023-02-13
EP3321988A2 (en) 2018-05-16
US20200227493A1 (en) 2020-07-16
EP3321988A3 (en) 2018-07-11
CN108074953B (en) 2024-03-08
JP2018081903A (en) 2018-05-24
US20180138251A1 (en) 2018-05-17
KR20180054983A (en) 2018-05-25
US20190326373A1 (en) 2019-10-24
US11004921B2 (en) 2021-05-11
EP4192219A1 (en) 2023-06-07

Similar Documents

Publication Publication Date Title
CN108074953A (en) Organic light-emitting display device and its manufacturing method
CN103904099B (en) Organic light emitting diode display device and method of fabricating the same
CN108022948A (en) Organic light-emitting display device and its manufacture method
CN102270656B (en) Organic light emitting diode display and manufacture method thereof
CN108257972A (en) Display device
CN106469746A (en) Oganic light-emitting display device and its manufacture method
KR101908514B1 (en) Organic light emitting display device and method for fabricating the same
CN105609528A (en) Organic light-emitting diode display having high aperture ratio and method for manufacturing the same
KR20170119801A (en) Organic light emitting display device and method of manufacturing organic light emitting display device
KR102651358B1 (en) Methods of manufacturing a mirror substrate and display devices including the same
KR20160059003A (en) Organic light emitting display device and method of manufacturing the same
CN107634083A (en) Display device
CN106611770A (en) Method of manufacturing organic light-emitting display apparatus and organic light-emitting display apparatus
KR20160120387A (en) Organic light-emitting display apparatus and method for manufacturing the same
CN106067474A (en) Organic light-emitting display device
CN109920923A (en) Organic light emitting diode device and preparation method, display panel, display device
KR20150040869A (en) Display unit, method of manufacturing the same, and method of manufacturing electronic apparatus
CN108123057A (en) Organic light-emitting display device and the method for manufacturing organic light-emitting display device
KR20160091529A (en) Organic light emitting display device and manufacturing method thereof
KR20170104013A (en) Touch display panel and method of manufacturing the same
KR101996438B1 (en) Substrate for display device, display device and method of manufacturing the same
KR102349246B1 (en) Organic light emitting display device and method of manufacturing organic light emitting display device
KR102267299B1 (en) Thin film transistor for display device and method for fabricating the same, and organic electroluminescent emitted diode device
CN114220821A (en) Display panel
CN113707703A (en) Display panel, preparation method thereof and display device

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant