CN108074854A - 定位装置 - Google Patents

定位装置 Download PDF

Info

Publication number
CN108074854A
CN108074854A CN201711099349.5A CN201711099349A CN108074854A CN 108074854 A CN108074854 A CN 108074854A CN 201711099349 A CN201711099349 A CN 201711099349A CN 108074854 A CN108074854 A CN 108074854A
Authority
CN
China
Prior art keywords
substrate
carrier element
positioner
base body
holder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201711099349.5A
Other languages
English (en)
Inventor
斯文·汉森
格奥尔格·芬克
亨里克·彼得里
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suess Microtec Lithography GmbH
Original Assignee
Suess Microtec Lithography GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Suess Microtec Lithography GmbH filed Critical Suess Microtec Lithography GmbH
Publication of CN108074854A publication Critical patent/CN108074854A/zh
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/7035—Proximity or contact printers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/682—Mask-wafer alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29075—Plural core members
    • H01L2224/29078—Plural core members being disposed next to each other, e.g. side-to-side arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/751—Means for controlling the bonding environment, e.g. valves, vacuum pumps
    • H01L2224/75101—Chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/751—Means for controlling the bonding environment, e.g. valves, vacuum pumps
    • H01L2224/75101—Chamber
    • H01L2224/75102—Vacuum chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/757—Means for aligning
    • H01L2224/75701—Means for aligning in the lower part of the bonding apparatus, e.g. in the apparatus chuck
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/757—Means for aligning
    • H01L2224/75703—Mechanical holding means
    • H01L2224/75704—Mechanical holding means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/757—Means for aligning
    • H01L2224/75723—Electrostatic holding means
    • H01L2224/75724—Electrostatic holding means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/757—Means for aligning
    • H01L2224/75743—Suction holding means
    • H01L2224/75744—Suction holding means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/757—Means for aligning
    • H01L2224/75743—Suction holding means
    • H01L2224/75745—Suction holding means in the upper part of the bonding apparatus, e.g. in the bonding head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/757—Means for aligning
    • H01L2224/75754—Guiding structures
    • H01L2224/75755—Guiding structures in the lower part of the bonding apparatus, e.g. in the apparatus chuck
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/758—Means for moving parts
    • H01L2224/75801—Lower part of the bonding apparatus, e.g. XY table
    • H01L2224/75804—Translational mechanism
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/75981—Apparatus chuck
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83053—Bonding environment
    • H01L2224/83054—Composition of the atmosphere
    • H01L2224/83075—Composition of the atmosphere being inert
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83053—Bonding environment
    • H01L2224/8309—Vacuum
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83053—Bonding environment
    • H01L2224/83091—Under pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8312—Aligning
    • H01L2224/83136—Aligning involving guiding structures, e.g. spacers or supporting members
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832—Applying energy for connecting
    • H01L2224/83201—Compression bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
    • H01L2224/83874—Ultraviolet [UV] curing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83905—Combinations of bonding methods provided for in at least two different groups from H01L2224/838 - H01L2224/83904
    • H01L2224/83906—Specific sequence of method steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Vehicle Body Suspensions (AREA)
  • Die Bonding (AREA)
  • Seal Device For Vehicle (AREA)

Abstract

本发明涉及用于定位基板(101)特别是晶片的定位装置(100)，其包括：处理室；基部本体(105)；载体元件(107)，其包括用于支撑基板(101)的支撑件(109)，载体元件(107)布置在基部本体(105)上方，并且形成为就距离基部本体(105)的距离而言是可移动的；以及保持件(111)，其用于再一基板(103)，特别是再一晶片或掩模，所述保持件(111)与所述载体元件(107)相对布置；其中在基部本体(105)与载体元件(107)之间存在密封腔体(113)，其能够被施加压力特别是负压，以便防止所述载体元件(107)由于外力的作用而发生不期望的移动。

Description

定位装置
技术领域
本发明涉及用于基板的定位装置以及用于使基板聚到一起的方法。
背景技术
掩模对准器用于精确地定位掩模以便光刻。掩模通常布置在包括光刻胶层的基板例如玻璃或半导体晶片上方。随后，通过掩模照射基板。
晶片通常放置在位于掩模下方的称作为卡盘的特殊晶片保持件上。通常，晶片与掩模之间的距离是可调节的，例如以便使掩模与晶片发生接触以进行照射。
在一些掩模对准器中，卡盘与掩模定位在可抽空的真空室中。这使得能够通过抽空真空室而在掩模与晶片之间建立真空接触并且随后使掩模与晶片聚到一起。
然而，在真空室的抽空过程中，由于所形成的大气压力可能过早地使卡盘压靠在掩模上。晶片的表面上的腔体或结构因此可能被过早地密封和不完全地抽空，这可能对光刻结果具有负面影响。
当两个晶片在晶片结合器中结合时可能发生类似的问题。当结合处理室在真空结合处理中被抽空时，相对布置的两个晶片可能由于所形成的大气压力而过早地压紧在彼此上。因此，晶片表面上的腔体可能未被完全抽空，使得可能在晶片之间发生空气夹入。
发明内容
因此，本发明的目的是在存在外力的情况下有效地定位基板特别是晶片。
通过独立技术方案的特征实现了此目的。有利的改进形成从属技术方案、说明书与附图的主题。
在第一方面，本发明涉及用于定位基板特别是晶片的定位装置，其包括：处理室；基部本体；载体元件，其包括用于支撑基板的支撑件，载体元件布置在基部本体上方，并且形成为就距离基部本体的距离而言是可移动的；以及保持件，其用于再一基板，特别是再一晶片或掩模，所述保持件与所述载体元件相对布置。在基部本体与载体元件之间设置有密封腔体，其能够被施加压力特别是负压，以便防止所述载体元件由于外力的作用而发生不期望的移动。这实现了以下优点，即能够例如在基板上方的压力突然变化的过程中有效地防止基板的不期望移动，并且因此能够改善处理结果。
基板可以是晶片。基板可以是圆盘状的，并且可以具有直径是2、3、4、5、6、8、12或18英寸的大致圆形外周。基板还可以基本上是平面状的，并且可以具有50μm与3000μm之间的厚度。基板可以具有直线边缘(平坦)和/或至少一个凹槽(槽口)。基板还可以是多边形特别是正方形或长方形的形状。
基板可以由半导体材料例如硅(Si)或砷化镓(GaAs)、玻璃例如石英玻璃、塑料材料或陶瓷形成。基板可以由单晶、多晶或非晶材料形成。此外，基板可以在各种情形中包括多种复合材料。基板可以在至少一个面上涂覆有涂层，例如聚合物，比如光刻胶或粘结剂等。此外，基板可以包括金属涂层，例如结构化的铬层。
此基板可以包括在至少一个基板表面上的结构，特别是规则布置的结构。结构可以在基板表面上形成***和/或腔体。结构可以包括：电路，例如晶体管、发光二极管或光电探测器、连接这些电路的导电轨道；或者光学部件。结构还可以包括MEMS或MOEMS结构。此基板还可以包括在一个或两个基板表面上的例如胶珠等残留物或杂质。
基部本体和/或载体元件可以各自由塑料材料或者金属特别是铝形成。载体元件可以联接到基部本体。例如，基部本体包括凹入部，载体元件可以至少部分地***其中。腔体可以由基部本体中的凹入部的未被载体元件接收的部分形成。
载体元件就与基部本体的距离而言的移动可以垂直于基部本体或者沿着基部本体的横向轴线。由于载体元件的移动，载体元件与基部本体的距离可以是可变的；特别地，载体元件在基部本体上方的高度可以是可变的。
定位装置特别是载体元件和/或基部本体可以形成卡盘。
支撑件可以包括位于载体元件中的凹入部或者形成为载体元件中的凹入部。凹入部的外周可以与基板的外周基本上相应，使得基板能***凹入部中。
再一基板也可以是晶片。再一基板还可以是掩模特别是光刻掩模，或者印模特别是用于基板的微压印或纳米压印印模。
基板和/或再一基板可以基本上是相同的尺寸，特别是具有基本上相同的周长。再一基板可以形成为用于基板的盖子和/或覆盖件。再一基板可以形成为对光透明。
通过定位装置，能够调节基板与相对的再一基板之间的距离。例如，定位装置可以使基板和再一基板聚到一起和/或发生接触。随后，可以执行光刻处理、结合处理和/或压印处理。
基部本体、载体元件与保持件可以布置在处理室内。
在一实施方式中，密封腔体包括压力终端，经由其能够控制腔体中的压力。通过压力终端，在处理过程中腔体中的压力可以保持在和/或达到期望值，意味着能够以非常简单的方式非常有效地控制载体元件的位置。
在一实施方式中，在所述基部本体与所述载体元件之间布置有调节元件，特别是升降元件，以便调节所述载体元件与所述基部本体的距离。这实现了基板能够有效地定位在距离基部本体固定距离处的优点。调节元件或升降元件可以包括至少部分地接收在基部本体中的多个销。销可以是可延伸且可收缩的，以便改变载体元件与基部本体之间的距离。升降元件可以包括压电元件。
调节元件可以是电动地和/或气动地可致动的，以调节载体元件与基部本体的距离。调节元件还可以是通过控制命令的方式可致动的。
在一实施方式中，所述定位装置包括恢复元件，特别是弹簧，其在所述基部本体与所述载体元件之间作用。这实现了在例如压力未被施加到腔体的情况下载体元件能够恢复到特定初始位置的优点。此外，恢复元件能够附加地协助载体元件的气动固定。
在一实施方式中，在所述基部本体与所述载体元件之间布置有多个支撑元件，所述多个支撑元件设定所述载体元件与所述基部本体的最小距离。这实现了以下优点，即通过设定载体元件与基部本体之间的最小距离，也能够设定腔体的最小尺寸。此外，如果在腔体中存在负压的话，就可以通过支撑元件固定载体元件的位置。
在一实施方式中，定位装置包括用于引导载体元件的移动的引导件。引导件可以布置在基部本体与载体元件之间。通过简单的方式，引导件防止了载体元件的不期望的横向移动，比如可能例如由于存在于载体元件与基部本体之间以界定腔体的密封件的弹性而发生的横向移动。引导件可以形成为实心引导件。
在一实施方式中，所述载体元件包括固定装置，定位在所述支撑件上的所述基板能够通过所述固定装置得到固定，特别是以机械方式、气动方式和/或静电方式得到固定。这确保了基板在处理过程中不会例如由于处理过程中发生作用的外力而发生移动。
为此目的，支撑元件和/或载体元件可以包括用于固定基板的器件，例如支架和/或抽吸开口。
在一实施方式中，可以将再一压力特别是过压施加到密封腔体，以便以目标方式使载体元件朝向安装件移动。这实现了基板之间的距离通过施加压力到腔体而可气动地调节的优点。可以通过与处理室、定位装置中的处理腔体中的压力和/或与环境压力的正压力差来设定过压。
在一实施方式中，保持件形成为使再一基板的表面朝向定位在支撑件上的基板定向。这实现了再一基板能够相对于定位在支撑件上的基板有效地布置的优点。
在一实施方式中，在所述载体元件与所述保持件之间存在处理腔体，其尺寸至少部分地由所述载体元件与所述保持件之间的距离设定。
处理腔体可以是处理室的一部分或者处理腔体形成处理室。
处理腔体还可以包括压力终端。
在一实施方式中，所述定位装置包括用于密封所述处理腔体的密封器件，特别是可充气密封唇。这实现了处理腔体能够被有效地密封的优点，例如以便保持处理腔体中的过压或负压。
在一实施例中，能够将过压或负压施加到所述处理腔体和/或能够将其抽空，或者所述处理腔体设有气体终端，通过所述气体终端，能够引入气体，特别是氦气。这实现了能够在例如真空等受控环境中处理基板的优点。可以通过腔体与处理腔体之间的压力差设定外力影响。
抽空处理腔体使得能够在基板与再一基板之间建立真空接触。为此目的，基板之间的腔体例如最初被抽空。随后，定位装置能够使基板朝向再一基板移动，并使两个基板发生接触。在基板和/或再一基板的表面上的腔体可以由此在接触基板以前被抽空。
当处理腔体被抽空时，这可能产生负压。此负压可以作为外力作用在载体元件或位于其上的基板上，并且这可以提升载体元件或基板并且在完成抽空以前使基板按压在彼此上。为抵抗此外力，现在还可以抽空载体元件与基部本体之间的腔体，从而形成抵抗外力并且固定载体元件的第二力。在基板之间的处理腔体被完全地抽空以后，调节元件可以通过期望方式朝向保持件移动载体元件，以使两个基板聚到一起。
在一实施方式中，所述定位装置包括间隔件，特别是楔状物或楔状间隔件，其可***在所述基部本体与所述保持件之间，以便调节和/或固定所述基部本体与所述保持件之间的距离。这实现了能够有效地防止保持件由于外力例如由于处理腔体中的负压而朝向基部本体移动的优点。
在第二方面，本发明涉及一种用于使基板特别是晶片与再一基板特别是再一晶片或掩模聚到一起的方法，所述方法包括以下方法步骤：相对于所述再一基板固定所述基板；抽空所述基板下方的密封腔体，以便防止所述基板由于外力的作用而发生不期望的移动；使所述基板以受控方式朝向所述再一基板移动；所述基板和再一基板定位在处理腔体中，其尺寸至少部分地通过所述基板之间的距离设定，能够将过压或负压施加到所述处理腔体和/或抽空它，或者能够向所述处理腔体充注气体特别是氦气。这实现了能够有效地防止基板例如在基板以目标方式聚到一起以前发生不期望移动的优点。在将压力施加到腔体稍前或稍后，可以调节在基板上引起外力的处理条件。例如，在基板之间产生负压。此外，这实现了可以在例如真空等受控环境中处理基板的优点。可以通过腔体与处理腔体之间的压力差设定外力作用。
抽空处理腔体使得能够例如在基板与再一基板之间建立真空接触。为此目的，在再一方法步骤中，基板之间的腔体可以最初被抽空。随后，基板可以朝向再一基板移动，并且可以使此两个基板发生接触。在基板和/或再一基板的表面上的腔体可以由此在接触晶片以前被抽空。
基板和/或再一基板可以各自是晶片，特别是玻璃或半导体晶片。再一基板还可以是掩模特别是光刻掩模，或印模特别是纳米压印或微压印印模。
基板和/或再一基板可以基本上是相同的尺寸，特别是具有基本上相同的周长。再一基板可以形成为用于基板的盖子和/或覆盖件。再一基板可以形成为对光透明。
固定基板可以包括固定到载体元件，特别是固定到载体元件的支撑件。载体元件可以包括用于此目的的固定装置。再一基板可以进而固定到与载体元件相对的保持件。
在一实施方式中，此方法还包括连接特别是结合基板。这实现了可以使得特别有效的晶片结合成为可能的优点。被施加了负压的腔体防止了两个基板可能例如过早地接触。由此能够确保在接触基板以前的最佳处理条件。
在一实施方式中，以受控方式朝向保持件移动载体元件包括将再一压力特别是过压施加到腔体。这实现了可以通过将压力施加到腔体使基板有效地聚到一起的优点。
根据本发明第一方面的定位装置可以形成为实施根据本发明第二方面的方法。
附图说明
参照附图更加详细地说明了再一些实施方式，其中：
图1是用于基板的定位装置的一部分的示意图；
图2是根据再一实施方式的定位装置的示意图；
图3是用于使基板与再一基板聚到一起的方法的流程图；并且
图4a-4g是用于连接两个基板的图2所示定位装置的示意图。
具体实施方式
图1是根据实施方式用于定位基板101的定位装置100的一部分的示意图。
定位装置100包括基部本体105与载体元件107，载体元件包括用于支撑基板101的支撑件109，载体元件107布置在基部本体105上方并且形成为就距离基部本体105的距离而言是可移动的。
定位装置100还包括用于再一基板103的保持件111，保持件111与载体元件107相对地布置。
在定位装置100中，在基部本体105与载体元件107之间存在密封腔体113，压力(特别是负压)可以施加到那里，以防止由于外力的作用使载体元件107或支撑基板101朝向保持件的不期望移动。
通过定位装置100，可以进一步调节基板101与固定到保持件111的再一基板103的距离。例如，定位装置100可以使基板101和再一基板103聚到一起和/或发生接触。随后，可以执行光刻处理、结合处理和/或压印处理。
基板101和/或再一基板103可以各自是晶片。再一基板103还可以是掩模特别是光刻掩模，或者印模，特别是用于基板101的微压印或纳米压印印模。
基板101和/或再一基板103可以基本上是相同的尺寸，特别是具有基本上相同的周长。再一基板103可以形成为用于基板101的盖子和/或覆盖件。再一基板103可以形成为对光透明。
基板101和/或再一基板103可以各自是圆盘状。基板101和/或再一基板103可以各自具有直径为2、3、4、5、6、8、12或18英寸的大致圆形外周。基板101、103还可以基本上是平面状的，并且可以各自具有50μm与3000μm之间的厚度。基板101、103可以各自具有直线边缘(平坦)和/或至少一个凹槽(槽口)。基板101、103还可以是多边形的，特别是正方形或长方形形状。
基板101和/或再一基板103可以各自由例如硅(Si)或砷化镓(GaAs)等半导体材料、例如石英玻璃等玻璃、塑料材料或陶瓷形成。基本101和/或再一基板103可以各自由单晶、多晶或非晶材料形成。此外，基板101、103可以各自包括多种复合材料。基板101、103中的至少一个可以在至少一个面上涂覆有涂层，例如聚合物，比如光刻胶或粘结剂等。此外，基板101、103中的至少一个可以包括金属涂层，例如结构化的铬层。
基板101和/或再一基板103可以各自包括在至少一个基板表面上的结构，特别是规则布置的结构。结构可以在基板表面上形成***和/或腔体。结构可以包括：电路，例如晶体管、发光二极管或光电探测器、连接这些电路的导电轨道；或者光学部件。结构还可以包括MEMS或MOEMS结构。基板101和/或再一基板103还可以包括在一个或两个基板表面上的例如胶珠等残留物或杂质。结构或残留物可以在每个情况下均处于基板101的或再一基板103的面向另一个基板的表面上。
基部本体105和/或载体元件107可以各自由塑料材料或者金属特别是铝形成。载体元件107可以联接到基部本体105。例如，基部本体105包括载体元件107可以至少部分地***其中的凹入部。腔体113可以由基部本体105中的凹入部的未被载体元件107接收的部分形成。
载体元件107就距离基部本体105的距离而言的移动与基部本体基本上垂直。此外，也可以使用与之倾斜的分量。由于载体元件107相对于基部本体105的移动，载体元件107距离基部本体105的距离改变；特别是载体元件107在基部本体105上方的高度可以改变。
载体元件107和/或基部本体105可以形成卡盘(chuck)。
支撑件109可以包括在载体元件107中的凹入部或者形成为载体元件107中的凹入部。凹入部的外周可以与基板101的外周基本上相应，使得基板101能***凹入部中。
载体元件107可以包括用于固定得到支撑的基板101的固定装置(图1中未示出)。这种固定例如是机械、气动和/或静电的。例如，这种固定防止了基板由于外力而从支撑件得到释放。支撑件109和/或载体元件107可以包括用于此目的的诸如支架和/或抽吸开口等固定器件。固定装置可以是夹紧装置。
保持件111形成为使再一基板103的表面朝向位于载体元件107上的基板101定位。基板103机械地、气动地或静电地固定在保持件111中。保持件111例如是真空保持件，其压入或吸入并且通过负压固定再一基板103。
保持件111的位置还可以在平行于载体元件107与被支撑基板101和/或垂直于载体元件107与被支撑基板101的平面中是可调节的。例如，保持件111使再一基板103平行于被支撑在载体元件107上的基板101的表面的精确位置调节成为可能，以使基板101、103的定向(对准)成为可能。出于相同目的，载体元件107和/或基部本体105也可以横向于支撑基板101是可移动的。
保持件111可以形成为对特别是在紫外线波长范围的光透明。特别地，保持件111可以由玻璃或透明塑料材料形成。这使得能够照射光通过保持件111，例如以便通过固定到保持件111的掩模照射基板101，或者以便固化基板101、103之间结合粘结剂。
可能能够施加进一步的压力特别是过压到密封腔体113，以使载体元件107以目标方式朝向保持件111移动。通过此种方式，基板101、103之间的距离能够减小，或者基板101、103能够以目标方式发生接触。
为调节压力，密封腔体113可以包括压力阀(图1中未示出)。
图1中的示例定位装置100还包括调节元件115、引导件117与恢复元件119。
调节元件115形成为精确地调节载体元件107与保持件111的距离。调节元件115可以布置在基部本体105与载体元件107之间。调节元件115还可以通过施加压力到腔体113来协助气动调节载体元件与保持件的距离。
调节元件115可以包括升降元件，特别是气动升降元件。调节元件或升降元件115可以包括至少部分地接收在基部本体中的多个销。销可以是可延伸且可收缩的，以便改变载体元件107与基部本体105之间的距离。升降元件可以包括一个压电元件或多个压电元件。
调节元件115可以是通过控制命令可致动的，以调节载体元件107与基部本体105之间的距离。
引导件117形成为引导载体元件107的移动，以便防止载体元件107的不期望的侧向移动。
在此情形中恢复元件119是布置在基部本体105与载体元件107之间的弹簧。恢复元件119能够附加地促进载体元件107的气动固定。
在再一实施方式中，调节元件115由基部本体105与载体元件107之间的被施加压力的腔体形成。由此，通过将压力施加到腔体113，能够调节载体元件107与基部本体105之间的距离以及固定载体元件107的位置。
图2是大体上与第一实施方式相应的根据再一实施方式的定位装置100的示意图。
图2示出了具有处理室的定位装置100，所述处理室特别用于光刻处理或结合处理，具有处理腔体201。处理腔体201定位在载体元件107与保持件111之间。基本上通过载体元件107与保持件111之间的距离设定处理腔体201的尺寸。
处理腔体201可以形成处理室的一部分，或者处理腔体201可以是特别用于光刻或结合处理的处理室。可以将过压或负压施加到处理腔体201和/或可以将其抽空。此外，处理腔体201可以充注有气体，特别是氦气。这使得能够在受控的处理环境中处理基板101、103。
在一实施方式中，抽空处理腔体201使得能够在基板101与再一基板103之间建立真空接触。为此目的，处理腔体201最初被抽空。随后，定位装置100使基板101朝向再一基板103移动，以使两个基板101、103发生接触。诸如位于基板101和/或再一基板103的表面上的腔体等结构因此能在基板101、103接触以前被有效地抽空。
将压力施加到载体元件107与保持件111之间的处理腔体201能够引起或放大外力在载体元件上的作用。例如，当处理腔体201被抽空时，这导致负压，其引起外力在载体元件107上和/或被支撑基板101上的作用。该外力能够致使载体元件107或基板101提升以及在相应基板表面上的全部结构被完全抽空以前使基板101、103按压在一起。由于现在还将压力施加到载体元件107与基部本体105之间的腔体113，因此可以补偿此力并且可以防止基板101、103过早地按压在一起。
外力在载体元件107或基板101上作用可以是腔体113与处理腔体201之间的压力差的结果。通过将适当的压力施加到腔体113，此压力差与形成的力可以最小化。在基板之间的处理腔体201被完全地抽空以后，调节元件115可以朝向保持件111移动载体元件107，以使两个基板101、103聚到一起。由此可以在基板101、103之间建立真空接触。替代地，可以将过压施加到腔体113，以便朝向保持件111移动载体元件107，并且使两个基板101、103发生接触。
图2还示出了通过真空抽吸将基板101固定到支撑件109以及将再一基板103固定到保持件111的示例。为此目的，支撑件109与保持件111各自包括通过负压固定基板101或再一基板103的多个抽吸开口。
在图2中，调节元件115包括多个支撑元件205a-205c，以便设定载体元件107与基部本体105以及与保持件111中的再一基板103的最小距离。如果在腔体113中存在强的负压，那么由此可以防止载体元件107直接地按压到基部本体107上。
在图2的示例中，基板101包括位于上面与下面上的结构。结构包括例如由腔体和/或电路形成的规则结构。例如，基板101的表面上的结构是嵌入相应腔体中的LED和/或探测器。图2中的基板表面的结构还包括位于面向再一基板103的表面上的呈胶珠211形式的杂质。当基板101、103聚到一起时，再一基板103可以按压到胶珠211上，从而在基板101、103之间形成粘结剂层。再一基板103可以包括用于基板101上的单个结构的透明盖子或覆盖件，其在粘结剂层固化以后保持就位在结构上方。
图2中的示例定位装置100还包括楔状间隔件203与密封器件207、209。
间隔件203***在基部本体105与保持件111之间，以便防止保持件朝向基部本体的不期望的移动。
当处理腔体201被抽空时，保持件111与载体元件107之间的负压可以在保持件上产生再一外力。此再一外力还可以致使保持件与载体元件107或被支撑的基板101按压在一起。为防止此，在抽空处理室201以前，将间隔件203***保持件与基部本体之间。
密封器件207形成为密封腔体113，特别是在载体元件107距离基部本体105的不同距离处。密封器件207优选地构造为密封环和/或密封唇，特别是可充气密封唇。
再一密封器件209在保持件111距离载体元件107不同的距离处密封处理腔体201或处理室201。为此目的，再一密封器件209也可以包括密封环和/或可充气密封唇。密封环的密封唇可以压靠保持件111，以密封处理腔体201。
图3是根据一实施方式使基板101与再一基板103聚到一起的方法300的流程图。基板101、103可以各自是玻璃或半导体基板。此外，基板101可以是晶片，并且再一基板103可以是掩模或印模。基板101、103可以与图1和/或图2中示出的基板101、103相应。
方法300可以利用图1和/或图2的定位装置来执行，并且包括固定301与再一基板103相对的基板101，抽空303基板101下方的密封腔体113以便防止基板由于外力的作用导致的不期望的移动，以及以受控方式使基板101朝向再一基板103移动305。
图3中的方法300还包括连接307特别是结合聚在一起的基板101、103。
如果利用如图2中的示例所示的包括处理室201的定位装置100来执行方法300，则可在载体元件107以受控方式朝向再一基板103移动305以前抽空该处理室201。在该抽空以前、期间或以后，可以将负压施加到载体元件107与基部本体105之间的腔体113，以便防止载体元件107朝向再一基板103的过早移动，并且确保基板表面上的结构与腔体的全部抽空。
图4a-4g是根据一实施方式在用于连接两个基板101、103的连接过程期间的图2的定位装置100的示意图。
图4a示出了连接过程的初始状态。包括有胶珠的基板101定位在载体元件107的支撑件109上，并且再一基板103固定到保持件111。支撑件109与保持件111通过负压固定基板101、103。基板101借以被抽吸到支撑件109上的压力差例如是P晶片＝-0.95巴。负压还施加到载体元件107与基部本体105之间的腔体113，从而形成与环境压力的压力差P卡盘＝-0.95巴。可充气密封唇209在图4a中收缩。由此，处理室201中的压力对应于环境压力(压力差P室＝0巴)。
图4b示出了可充气密封唇209的随后扩展以密封处理室201。此外，保持件111下降并通过楔状物203固定在距离基部本体105的设定距离处。
图4c示出了密封处理室201的抽空。这例如与环境压力形成负压力差P室＝-0.75巴(bar)。由于压力室113也被施加有负压，所以处理室201的抽空最初不会导致载体元件107朝向保持件111移动。
在图4d中示出的下一处理步骤中，例如P卡盘＝+0.5巴的过压被施加到腔体113。因此，沿着z方向可移动的晶片支撑件将位于载体元件107上的基板101压靠到上基板103上。胶珠因此能在基板101、103之间被压缩，并且形成均匀的粘结剂层。对于侧向可调节的载体元件107或侧向可调节的支撑件109来说，此时进行调节也是可能的。
图4e示出了密封唇209的随后收缩以及楔状物203的移除。
如果在前一步骤中进行微调是不可能的，那么载体元件107现在可以进一步朝向保持件移动，抽吸到卡盘支撑件上并且被调节。图4f中示出了载体元件的这种下降。
图4g示出了随后通过紫外光401照射已连接的基板从而固化基板101、103之间的粘结剂层。
图1、图2和图4a-4g中示出的定位装置100可以整合到用于微结构部件的制造***、例如掩模对准器、激光刻写器等光刻***、诸如晶片结合器、步进器等结合***、蚀刻***或清洗***中。
制造***可以形成为用于制造工艺，其中将在基板101、103之间产生真空和/或将在基板101、103之间建立真空接触，例如用于真空结合。
附图标记列表
100：定位装置
101：基板
103：再一基板
105：基部本体
107：载体元件
109：支撑件
111：保持件
113：腔体
115：调节元件
117：引导件
119：恢复元件
201：处理腔体
203：楔状物
205a-250c：支撑元件
207：密封器件
209：再一密封器件
211：粘结剂珠
300：使基板与再一基板聚到一起的方法
301：固定
303：抽空
305：移动
307：连接
401：紫外光

Claims (15)

1.一种用于定位基板(101)特别是晶片的定位装置(100)，包括：
处理室；
基部本体(105)；
载体元件(107)，其包括用于支撑所述基板(101)的支撑件(109)，所述载体元件(107)布置在所述基部本体(105)上方，并且形成为就与所述基部本体(105)的距离而言是可移动的；以及
保持件(111)，其用于再一基板(103)，特别是再一晶片或掩模，所述保持件(111)与所述载体元件(107)相对布置；
其中在所述基部本体(105)与所述载体元件(107)之间存在密封腔体(113)，其能够被施加压力特别是负压，以便防止所述载体元件(107)由于外力的作用而发生不期望的移动。
2.根据权利要求1所述的定位装置(100)，其中，所述密封腔体(113)包括压力终端，经由其能够控制所述腔体(113)中的压力。
3.根据权利要求1所述的定位装置(100)，其中，在所述基部本体(105)与所述载体元件(107)之间布置有调节元件(115)，特别是升降元件，以便调节所述载体元件(107)与所述基部本体(105)的距离。
4.根据权利要求1所述的定位装置(100)，其中，所述定位装置(100)包括恢复元件(119)，特别是弹簧，其在所述基部本体(105)与所述载体元件(107)之间作用。
5.根据权利要求1所述的定位装置(100)，其中，在所述基部本体(105)与所述载体元件(107)之间布置有多个支撑元件(205a-250c)，所述多个支撑元件设定所述载体元件(107)与所述基部本体(105)的最小距离。
6.根据权利要求1所述的定位装置(100)，其中，所述定位装置(100)包括用于引导所述载体元件(107)的移动的引导件(117)。
7.根据权利要求1所述的定位装置(100)，其中，所述载体元件(107)包括固定装置，定位在所述支撑件(109)上的所述基板(101)能够通过所述固定装置得到固定，特别是以机械方式、气动方式和/或静电方式得到固定。
8.根据权利要求1所述的定位装置(100)，其中，在所述载体元件(111)与所述保持件(105)之间存在处理腔体(201)，其尺寸至少部分地由所述载体元件(107)与所述保持件(111)之间的距离设定。
9.根据权利要求8所述的定位装置(100)，其中，所述处理腔体是所述处理室的一部分或者限定出所述处理室。
10.根据权利要求8所述的定位装置(100)，其中，所述定位装置(100)包括用于密封所述处理腔体(201)的密封器件(209)，特别是可充气密封唇。
11.根据权利要求8所述的定位装置(100)，其中，能够将过压或负压施加到所述处理腔体(201)和/或能够将其抽空，或者其中所述处理腔体(201)设有气体终端，通过所述气体终端，能够引入气体，特别是氦气。
12.根据权利要求1所述的定位装置(100)，其中，所述定位装置(100)包括至少一个间隔件，特别是楔状物，其可***在所述基部本体(105)与所述保持件(111)之间，以便调节和/或固定所述基部本体(105)与所述保持件(111)之间的距离。
13.一种用于使基板(101)特别是晶片与再一基板(103)特别是再一晶片聚到一起的方法(300)，其中所述方法(300)包括以下方法步骤：
相对于所述再一基板(103)固定(301)所述基板(101)；
抽空(303)所述基板(101)下方的密封腔体(113)，以便防止所述基板(101)由于外力的作用而发生不期望的移动；
使所述基板(101)以受控方式朝向所述再一基板(103)移动(305)；以及
所述再一基板(103)定位在处理腔体(201)中，其尺寸至少部分地通过所述基板(101、103)之间的距离设定，能够将过压或负压施加到所述处理腔体(201)和/或抽空它，或者能够向所述处理腔体(201)充注气体特别是氦气。
14.根据权利要求13所述的方法(300)，其中，所述方法(300)还包括连接(307)特别是结合所述基板(101、103)。
15.根据权利要求13所述的方法(300)，其中，受控移动(307)包括向所述腔体(113)施加再一压力特别是过压。
CN201711099349.5A 2016-11-11 2017-11-09 定位装置 Pending CN108074854A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL2017773 2016-11-11
NL2017773A NL2017773B1 (en) 2016-11-11 2016-11-11 Positioning device

Publications (1)

Publication Number Publication Date
CN108074854A true CN108074854A (zh) 2018-05-25

Family

ID=62026700

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201711099349.5A Pending CN108074854A (zh) 2016-11-11 2017-11-09 定位装置

Country Status (10)

Country Link
US (1) US11075102B2 (zh)
JP (1) JP6894347B2 (zh)
KR (1) KR102275932B1 (zh)
CN (1) CN108074854A (zh)
AT (1) AT519311A3 (zh)
CH (1) CH713128A2 (zh)
DE (1) DE102017125442A1 (zh)
NL (1) NL2017773B1 (zh)
SG (1) SG10201708852RA (zh)
TW (1) TWI771336B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114609706A (zh) * 2022-04-27 2022-06-10 华天慧创科技（西安）有限公司 一种堆叠式微透镜阵列制作方法

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101955697B1 (ko) * 2018-06-04 2019-03-07 울산과학기술원 이산화탄소를 활용하는 이차전지 및 이를 포함하는 복합 발전 시스템
US10840210B2 (en) * 2018-12-28 2020-11-17 Micron Technology, Inc. Methods and systems for manufacturing semiconductor devices
US10840209B2 (en) 2018-12-28 2020-11-17 Micron Technology, Inc. Methods and systems for manufacturing semiconductor devices
NL2023022B1 (en) * 2019-04-29 2020-11-05 Suss Microtec Lithography Gmbh Replication device and method for reproducing a structure on a substrate
JP7044985B2 (ja) * 2020-04-24 2022-03-31 富士通クライアントコンピューティング株式会社 表示装置
CN113607263B (zh) * 2020-05-04 2022-06-28 新力奇有限公司 具高度方向运动感测件精准定位装置的振动量测组件
CN112151418B (zh) * 2020-09-11 2024-04-05 安徽龙芯微科技有限公司 一种硅基转接板的封装机构及其封装方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4633531Y1 (zh) * 1967-04-13 1971-11-19
US5010295A (en) * 1989-06-14 1991-04-23 General Signal Corporation Ball screw supported Z stage
JP2003249425A (ja) * 2002-02-22 2003-09-05 Toray Eng Co Ltd 実装方法および装置
CN101527254A (zh) * 2007-11-08 2009-09-09 应用材料股份有限公司 用于膜均匀性的旋转温控基板底座

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3674368A (en) * 1970-05-11 1972-07-04 Johannsmeier Karl Heinz Out of contact optical alignment and exposure apparatus
US3858978A (en) * 1973-08-10 1975-01-07 Kasper Instruments Chuck for use in out-of-contact optical alignment and exposure apparatus
FR2388372A1 (fr) 1977-04-20 1978-11-17 Thomson Csf Platine a rattrapage de niveau et positionneur a indexation mecanique utilisant une telle platine
JPH08229759A (ja) * 1995-02-24 1996-09-10 Canon Inc 位置決め装置並びにデバイス製造装置及び方法
US6063196A (en) * 1998-10-30 2000-05-16 Applied Materials, Inc. Semiconductor processing chamber calibration tool
EP1077393A2 (en) * 1999-08-19 2001-02-21 Canon Kabushiki Kaisha Substrate attracting and holding system for use in exposure apparatus
JP2002313688A (ja) * 2001-04-16 2002-10-25 Toshiba Corp ウェーハ接着装置
JP2008511138A (ja) * 2004-08-18 2008-04-10 ニュー ウエイ マシーン コンポーネント インコーポレイティッド 空気軸受と段差ポンプ溝を備えた移動真空チャンバステージ
JP4633531B2 (ja) 2005-04-27 2011-02-16 東京瓦斯株式会社 固体酸化物形燃料電池スタックの電気的接合構造及び接合方法
CN103258762B (zh) * 2007-08-10 2016-08-03 株式会社尼康 基板贴合装置及基板贴合方法
US8314371B2 (en) * 2008-11-06 2012-11-20 Applied Materials, Inc. Rapid thermal processing chamber with micro-positioning system
KR20100108418A (ko) * 2008-11-14 2010-10-06 도쿄엘렉트론가부시키가이샤 접합 장치 및 접합 방법
JP2011023886A (ja) 2009-07-14 2011-02-03 Panasonic Corp テレビ会議装置及び映像表示処理方法
DE102010007970A1 (de) * 2010-02-15 2011-08-18 Suss MicroTec Lithography GmbH, 85748 Verfahren und Vorrichtung zum aktiven Keilfehlerausgleich zwischen zwei im wesentlichen zueinander parallel positionierbaren Gegenständen
JP2012054416A (ja) * 2010-09-01 2012-03-15 Nikon Corp 押圧装置、貼り合わせ装置、貼り合わせ方法、及び、積層半導体装置の製造方法
JP5352609B2 (ja) * 2011-03-04 2013-11-27 東京エレクトロン株式会社 接合方法、プログラム、コンピュータ記憶媒体、接合装置及び接合システム
EP2704182B1 (en) * 2011-04-26 2018-01-03 Nikon Corporation Substrate bonding apparatus and substrate bonding method
JP2013218198A (ja) 2012-04-11 2013-10-24 Hitachi High-Technologies Corp 基板貼り合わせ装置
JP5712975B2 (ja) * 2012-07-06 2015-05-07 東京エレクトロン株式会社 計測用基板、基板処理装置及び基板処理装置の運転方法
US20150206783A1 (en) * 2014-01-20 2015-07-23 Suss Microtec Lithography, Gmbh System amd method for substrate holding

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4633531Y1 (zh) * 1967-04-13 1971-11-19
US5010295A (en) * 1989-06-14 1991-04-23 General Signal Corporation Ball screw supported Z stage
JP2003249425A (ja) * 2002-02-22 2003-09-05 Toray Eng Co Ltd 実装方法および装置
CN101527254A (zh) * 2007-11-08 2009-09-09 应用材料股份有限公司 用于膜均匀性的旋转温控基板底座

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114609706A (zh) * 2022-04-27 2022-06-10 华天慧创科技（西安）有限公司 一种堆叠式微透镜阵列制作方法

Also Published As

Publication number Publication date
KR102275932B1 (ko) 2021-07-13
KR20180053240A (ko) 2018-05-21
JP2018117113A (ja) 2018-07-26
SG10201708852RA (en) 2018-06-28
CH713128A2 (de) 2018-05-15
AT519311A2 (de) 2018-05-15
TW201818500A (zh) 2018-05-16
NL2017773B1 (en) 2018-05-24
TWI771336B (zh) 2022-07-21
AT519311A3 (de) 2020-01-15
US11075102B2 (en) 2021-07-27
US20180138070A1 (en) 2018-05-17
JP6894347B2 (ja) 2021-06-30
DE102017125442A1 (de) 2018-05-17

Similar Documents

Publication Publication Date Title
CN108074854A (zh) 定位装置
KR20170132558A (ko) 웨이퍼 분리 장치
US20210129520A1 (en) Method and device for embossing of a nanostructure
KR20090111562A (ko) 미세 패턴 임프린트 장치
JP2017112230A (ja) インプリント装置および物品製造方法
US20190109021A1 (en) Resin-sealing device and resin-sealing method
JP5693090B2 (ja) 基板のエンボス加工用装置
US11462404B2 (en) Imprint apparatus and method of manufacturing article
JP4926630B2 (ja) 固体撮像装置の製造方法および製造装置、並びに貼付装置
JP2012004463A (ja) インプリント装置、インプリント方法及びデバイスの製造方法
WO2018088049A1 (ja) インプリント装置、インプリント方法、及び物品製造方法
JP2010283108A (ja) インプリント装置及び物品の製造方法
KR101027467B1 (ko) 미세패턴 형성장치 및 이를 이용한 미세패턴 형성방법
US11599028B2 (en) Methods and systems for clamping a substrate
US10811298B2 (en) Patterned carrier wafers and methods of making and using the same
CN112456436B (zh) 键合方法和键合结构
US11840010B2 (en) Pattern forming method, imprint apparatus, and article manufacturing method
KR20130054307A (ko) 기판합착장치 및 기판합착방법
KR20230060947A (ko) 기판 접합 장치 및 이를 이용한 기판 접합 방법
US20080305580A1 (en) Bonding of structures together including, but not limited to, bonding a semiconductor wafer to a carrier
KR20230150417A (ko) 소자 전사방법
KR20110103693A (ko) 기판척 및 이를 이용한 기판처리장치
TW202349567A (zh) 用以轉移電子元件之裝置、焊接電子元件之方法及製造發光二極體顯示器之方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20180525

WD01 Invention patent application deemed withdrawn after publication