CN108062124A - A kind of temperature control wafer erecting bed and its temperature control method - Google Patents
A kind of temperature control wafer erecting bed and its temperature control method Download PDFInfo
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- CN108062124A CN108062124A CN201610979697.0A CN201610979697A CN108062124A CN 108062124 A CN108062124 A CN 108062124A CN 201610979697 A CN201610979697 A CN 201610979697A CN 108062124 A CN108062124 A CN 108062124A
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- 238000000034 method Methods 0.000 title claims abstract description 22
- 239000012782 phase change material Substances 0.000 claims abstract description 83
- 230000008859 change Effects 0.000 claims abstract description 21
- 230000009466 transformation Effects 0.000 claims abstract description 20
- 230000007704 transition Effects 0.000 claims abstract description 19
- 238000010438 heat treatment Methods 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 10
- 239000000919 ceramic Substances 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 5
- 238000002425 crystallisation Methods 0.000 claims description 4
- 230000008025 crystallization Effects 0.000 claims description 4
- 230000001413 cellular effect Effects 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 3
- 230000008569 process Effects 0.000 abstract description 8
- 238000010586 diagram Methods 0.000 description 9
- 239000000126 substance Substances 0.000 description 9
- 239000000956 alloy Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 229910000618 GeSbTe Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 229910002058 ternary alloy Inorganic materials 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910005900 GeTe Inorganic materials 0.000 description 1
- 229910018321 SbTe Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
- G05D23/00—Control of temperature
- G05D23/19—Control of temperature characterised by the use of electric means
- G05D23/20—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature
- G05D23/24—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature the sensing element having a resistance varying with temperature, e.g. a thermistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Automation & Control Theory (AREA)
- Drying Of Semiconductors (AREA)
- Resistance Heating (AREA)
- Control Of Temperature (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
A kind of temperature control wafer erecting bed and its temperature control method, phase-change material is applied in the thermal balance conductive loop of wafer erecting bed, the temperature adjustment module that different drive control circuits is connected to it applies voltage to realize the phase transformation of phase-change material, phase-change material is made to change between crystalline phase and amorphous phase, to change the coefficient of heat conduction of phase-change material, so as to change the local hot loop Thermal Synthetic coefficient of conductivity in wafer erecting bed, the final local temperature for changing wafer erecting bed.The present invention is by controlling the transition and phase transition process of phase-change material, achieve the purpose that the heat of phase-change material is controlled to pass to coefficient, realize in wafer erecting bed slave heater to the adjusting of the local hot loop Thermal Synthetic coefficient of conductivity low-temperature receiver, so as to achieve the purpose that adjust compensation optimizing heter temperature unevenness.
Description
Technical field
The present invention relates to field of semiconductor manufacture more particularly to a kind of temperature control wafer erecting beds and its temperature control method.
Background technology
Temperature control wafer erecting bed in semiconductor etching device is used to adsorb wafer and control the temperature of wafer.Mesh
In the multi-region temperature control wafer erecting bed of preceding use, particularly greater than the wafer erecting bed of more than 100 a warm areas, each warm area heater
Type be usually semiconductor chilling plate or traditional resistance heater, the former is by changing access semiconductor chilling plate just
The temperature control in each area, percentage of the latter directly by adjusting input voltage are realized to/reverse current and control voltage ratio
Than controlling the heating of warm area.Semiconductor chilling plate or resistance heater are either used, to needing to control into trip temperature,
Used control system is more complicated, is easily disturbed by radio frequency, is unable to reach expected temperature control effect.
The content of the invention
The present invention provides a kind of temperature control wafer erecting bed and its temperature control method, and phase-change material is applied in wafer erecting bed
In thermal balance conductive loop, by controlling the transition and phase transition process of phase-change material, reach the heat biography of control phase-change material
To the purpose of coefficient, realize in wafer erecting bed slave heater to the local hot loop Thermal Synthetic coefficient of conductivity low-temperature receiver
Adjusting, so as to achieve the purpose that adjust compensation optimizing heter temperature unevenness.
In order to achieve the above object, the present invention provides a kind of temperature control wafer erecting bed, is arranged on semiconductor etching device
Vacuum chamber in, the temperature control wafer erecting bed includes：
Ceramic substrate, for placing wafer；
Heater is arranged below ceramic substrate, for heating ceramic substrate；
At least one temperature adjustment module is arranged on heater surrounding, the temperature adjustment module include phase-change material with
And the resistance set with phase change material contacts, by the variation of resistance temperature, the crystalline phase of phase-change material is caused to change, causes temperature
The coefficient of heat conduction variation of adjustment module, so as to adjust the temperature of wafer erecting bed；
Drive control circuit, the resistance being electrically connected in temperature adjustment module, by applying different heating work(to resistance
Rate so that phase-change material changes between different crystalline phases；
Multiple low-temperature receivers are set in the substrate, for reducing the temperature of wafer erecting bed.
The shape of the heater is circular or annular.
The arrangement of the heater is arranged to single area, two-region or multizone heater.
The temperature adjustment module is arranged on above heater and is either arranged below heater or sets simultaneously
Above and below heater.
The quantity of the drive control circuit is identical with the quantity of temperature adjustment module, each temperature adjustment module
Independent drive control circuit is electrically connected.
The shape of the temperature adjustment module for single disc or it is multiple with one heart it is ring-like or it is cellular arrangement,
Or matrix is arranged or linear array arrangement form.
The present invention also provides a kind of semiconductor etching device, comprising：The temperature control wafer erecting bed being arranged in vacuum chamber.
The present invention also provides a kind of temperature control method of temperature control wafer erecting bed, this method includes：Different drive control electricity
Temperature adjustment module of its connection of road direction applies heating power and realizes the phase transformation of phase-change material, makes phase-change material in crystalline phase and non-
Change between crystalline phase, to change the coefficient of heat conduction of phase-change material, so as to change the synthesis of the local hot loop in wafer erecting bed
The coefficient of heat conduction, the final local temperature for changing wafer erecting bed；
Wherein, the coefficient of heat conduction of the phase-change material in crystalline phase is less than the heat transfer system of the phase-change material in amorphous phase
Number；
The hot loop refers to：The heat that heat is formed successively by heater, temperature adjustment module, substrate, low-temperature receiver
Balance conductive loop；
The local hot loop Thermal Synthetic coefficient of conductivity is the phase-change material coefficient of heat conduction and the substrate coefficient of heat conduction
Function：
K=f (KPhase transformation,KSubstrate), wherein, K is the local hot loop Thermal Synthetic coefficient of conductivity, KPhase transformationIt is phase-change material heat transfer system
Number, KSubstrateIt is the substrate coefficient of heat conduction.
The control circuit applies voltage to realize that the method for the phase transformation of phase-change material includes following step to phase-change material
Suddenly：
Resistance of the drive control circuit into temperature adjustment module applies heating power, and resistance heating makes the phase in crystalline phase
Become material temperature be increased to more than melt temperature, phase-change material cooling after, make phase-change material from crystal transition be amorphous phase；
Resistance of the drive control circuit into temperature adjustment module applies heating power, and resistance heating makes in amorphous phase
The temperature of phase-change material is increased to below crystallization temperature more than melt temperature, make phase-change material from amorphous phase transition be crystalline phase.
The present invention applies phase-change material in the thermal balance conductive loop of wafer erecting bed, by controlling phase-change material
Transition and phase transition process, achieve the purpose that control phase-change material heat pass to coefficient, realize in wafer erecting bed from
Heater adjusts compensation optimizing heater temperature to the adjusting of the local hot loop Thermal Synthetic coefficient of conductivity between low-temperature receiver so as to reach
Spend the purpose of unevenness.Control circuit of the present invention is simple, and control signal is not easy that, by RF signal interferences, good temperature control can be obtained
Effect.
Description of the drawings
Fig. 1 is a kind of position relationship schematic diagram of temperature control wafer erecting bed provided by the invention.
Fig. 2 is a kind of structure diagram of temperature control wafer erecting bed provided by the invention.
Fig. 3 is the structure diagram of temperature adjustment module.
Fig. 4 is substance phase transformation schematic diagram.
Fig. 5 is the schematic diagram that the substance coefficient of heat conduction changes with crystalline phase.
Fig. 6 is the relational graph of voltage pulse and phase transformation.
Fig. 7 is heat transfer schematic diagram of the phase-change material from crystal transition for amorphous phase.
Fig. 8 is heat transfer schematic diagram of the phase-change material from amorphous phase transition for crystalline phase.
Specific embodiment
Below according to Fig. 1~Fig. 8, presently preferred embodiments of the present invention is illustrated.
As shown in Figure 1, the present invention provides a kind of temperature control wafer erecting bed 2, the vacuum of semiconductor etching device is arranged on
In chamber 1, as shown in Fig. 2, in one embodiment of the invention, the temperature control wafer erecting bed 2 includes：
Ceramic substrate 201, for placing wafer；
Heater 202 is arranged on 201 lower section of ceramic substrate, for heating ceramic substrate 201；
At least one temperature adjustment module 203 is arranged on 202 surrounding of heater, as shown in figure 3, the temperature adjusts mould
Block 203 includes phase-change material 2031 and contact the resistance 2032 of setting with phase-change material 2031, by the variation of resistance temperature,
The crystalline phase of phase-change material is caused to change, the coefficient of heat conduction of temperature adjustment module is caused to change, so as to adjust wafer erecting bed
Temperature；At least two heating electrodes are wherein further included for importing the electrical power of heating, two heating electrodes can be located at phase respectively
On change material layer 2031 and under resistance 2032, heating voltage is applied between two electrodes up and down.Two heating electrodes also may be used
To be arranged under resistive layer 2032, network of conductors that is parallel to each other or intersecting is formed, drives resistance heating.Wherein resistance 2032
It can include multiple individually controllable resistance heating modules of rectangular arrangement, each heating electrode is connected respectively to the multiple
Resistance heating module realizes the control of temperatures at localized regions, so as to fulfill the crystal phase structure to 2031 regional area of phase-change material
Control.
Multiple drive control circuit (not shown), the resistance 2032 being electrically connected in temperature adjustment module 203 lead to
It crosses and voltage is applied to resistance 2032 to realize the phase transformation of phase-change material 2031；
Multiple low-temperature receivers 205 are arranged in substrate 204 (using aluminium material), for reducing the temperature of wafer erecting bed.
The shape of the heater 202 could be provided as single area, two-region for circular or annular, the arrangement of heater
Or multizone heater.
The temperature adjustment module 203 can be arranged on 202 top of heater or be arranged on 202 lower section of heater,
Or it is arranged on simultaneously above and below heater 202.
Independent drive control circuit, the temperature is electrically connected in each described temperature adjustment module 203
The shape for spending adjustment module 203 can be single disc or multiple concentric ring-like or cellular arrangements or matrix
Arrangement or linear array arrangement form etc..
The phase-change material refers to that the crystalline phase of the material can change under certain condition, and object turns from a kind of phase
The process for changing to another phase is exactly phase transformation, and if water from liquid becomes solid-state, chemical property is identical, but physical property is sent out
Variation is given birth to.Caused by this phase transformation can be temperature etc., it can change with the resistance value of physical object attribute, simultaneously
The variation of resistance value can also cause the variation of the coefficient of heat conduction of object, if water from liquid is transformed into solid, the coefficient of heat conduction from
(1.6W/ m*k) changes to 2.22W/ (m*k).
As shown in table 1, bianry alloy, ternary alloy three-partalloy or multicomponent alloy may be employed in the phase-change material, it is preferred that
The ratio of GeSbTe (Ge-Sb-Te) alloy material application is wide.
| Bianry alloy | Ternary alloy three-partalloy | Multicomponent alloy |
| GeTe | GeSbTe | GeSbTe-N(O) |
| InTe | GeTeAs | AgInTeSb |
| In2Se3 | AsSbTe | GeSbAsSi |
| SbTe | SeSbTe | GeSbTeSn |
As shown in figure 4, by dissolving by heating cooling, the orderly crystal phase structure of substance can be changed into unordered amorphous phase
Structure, then can be reversible for initial orderly crystalline phase object by unordered amorphous phase substance by annealing (heating of certain temperature)
Matter.
As shown in figure 5, substance is after crystalline phase state or amorphous state is reached, the resistance value under two states is substantially not
Together, the corresponding coefficient of heat conduction is also different, and is remained unchanged within the specific limits without (constant-resistance value, the perseverance of being affected by the external environment
The coefficient of heat conduction), the resistance value of crystalline phase state is relatively low and the coefficient of heat conduction is higher, the higher and hot biography of resistance value of amorphous state
It is relatively low to lead coefficient.And in phase transition process, with the variation of temperature, the crystalline phase of substance is between unordered amorphous phase and orderly crystalline phase
Changed, the variation of corresponding increasing or decreasing can also occur for corresponding resistance value and the coefficient of heat conduction.Therefore can obtain
Enlightenment controls the temperature change in phase transition process that can realize the accurate control to substance resistance value and the coefficient of heat conduction exactly
System.
The present invention also provides a kind of temperature control method of temperature control wafer erecting bed, comprising：Different drive control circuits to its
The temperature adjustment module of connection applies voltage to realize the phase transformation of phase-change material, and phase-change material is made to turn between crystalline phase and amorphous phase
Become, to change the coefficient of heat conduction of phase-change material, so as to change the local hot loop Thermal Synthetic coefficient of conductivity in wafer erecting bed,
The final local temperature for changing wafer erecting bed.
The hot loop refers to：The heat that heat is formed successively by heater, temperature adjustment module, substrate, low-temperature receiver
Balance conductive loop.
The local hot loop Thermal Synthetic coefficient of conductivity is the phase-change material coefficient of heat conduction and the substrate coefficient of heat conduction
Function：
K=f (KPhase transformation,KSubstrate), wherein, K is the local hot loop Thermal Synthetic coefficient of conductivity, KPhase transformationIt is phase-change material heat transfer system
Number, KSubstrateIt is the substrate coefficient of heat conduction.
Wherein, the phase-change material in crystalline phase has low-resistance value and high heat-conduction coefficient, the phase transformation material in amorphous phase
Material has high resistance and low heat conduction coefficient.
The drive control circuit applies voltage to realize that the method for the phase transformation of phase-change material has to temperature adjustment module
Body comprises the steps of：
Drive control circuit applies voltage to resistance, and resistance heating makes the temperature of the phase-change material in crystalline phase be increased to and melt
Change more than temperature, after phase-change material cooling, the orderly growth course of phase-change material polycrystalline is destroyed, and makes phase-change material from crystalline phase
(low-resistance value high heat-conduction coefficient) is changed into amorphous phase (high resistance low heat conduction coefficient)；
Drive control circuit applies voltage to resistance, and resistance heating is increased to the temperature of the phase-change material in amorphous phase
Below crystallization temperature more than melt temperature, phase-change material is made from amorphous phase (high value low heat conduction coefficient) to be changed into crystalline phase (low
Resistance value high heat-conduction coefficient)；
Wherein, drive control circuit applies voltage to resistance, can using resistance formula by measuring the current value in resistance
The resistance value of phase-change material is calculated, to realize the monitoring to phase-change material state.
By the percentage for the voltage amplitude that dynamic adjustment drive control circuit applies, that is, phase-change material is controlled from amorphous phase
To this process of crystal transition, it is possible to dynamically adjust the coefficient of heat conduction of the phase-change material from amorphous phase to crystalline phase, reach
The purpose of accurate adjusting and optimizing heter temperature unevenness.
As shown in fig. 7, it is heat transfer schematic diagram of the phase-change material from crystal transition for amorphous phase, by being passed through electricity to resistance
Pressure, makes electric energy change into thermal energy, the temperature of phase-change material is made to be increased to more than melt temperature, realizes phase-change material from crystalline substance after cooling
The transformation of amorphous phase is mutually arrived, the high heat-conduction coefficient of phase-change material is transformed into low heat conduction coefficient, the part of hot loop at this time
The comprehensive coefficient of heat conduction also decreases, and the heat generated from heater is more difficult to reach low-temperature receiver through phase-change material, and heat scatters and disappears
Slowly, the temperature adjustment module shows as high-temperature region at this time.
As shown in figure 8, it is heat transfer schematic diagram of the phase-change material from amorphous phase transition for crystalline phase, by being passed through electricity to resistance
Pressure, makes phase-change material temperature be increased to more than crystallization temperature, below melt temperature, realizes phase-change material from amorphous phase to crystalline phase
Transformation, the low heat conduction coefficient of phase-change material are transformed into high heat-conduction coefficient, the Local synthesis heat transfer system of hot loop at this time
Number also increases, and the heat generated from heater more easily passes phase-change material and reaches low-temperature receiver, and heat scatters and disappears soon, at this time the temperature
Degree adjustment module shows as low-temperature space.
The present invention applies phase-change material in the thermal balance conductive loop of wafer erecting bed, by controlling phase-change material
Transition and phase transition process, achieve the purpose that control phase-change material heat pass to coefficient, realize in wafer erecting bed from
Heater adjusts compensation optimizing heater temperature to the adjusting of the local hot loop Thermal Synthetic coefficient of conductivity between low-temperature receiver so as to reach
Spend the purpose of unevenness.Control circuit of the present invention is simple, can obtain good temperature control effect.
Although present disclosure is discussed in detail by above preferred embodiment, but it should be appreciated that above-mentioned
Description is not considered as limitation of the present invention.After those skilled in the art have read the above, for the present invention's
A variety of modifications and substitutions all will be apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (9)
1. a kind of temperature control wafer erecting bed, is arranged in the vacuum chamber of semiconductor etching device, which is characterized in that the temperature
Control wafer erecting bed includes：
Ceramic substrate (201), for placing wafer；
Heater (202) is arranged below ceramic substrate (201), for heating ceramic substrate (201)；
At least one temperature adjustment module (203) is arranged on heater (202) surrounding, which includes
Phase-change material (2031) and the resistance (2032) that setting is contacted with phase-change material (2031), by the variation of resistance temperature, draw
The crystalline phase variation of phase-change material is played, the coefficient of heat conduction of temperature adjustment module is caused to change, so as to adjust the temperature of wafer erecting bed
Degree；
Drive control circuit, the resistance (2032) being electrically connected in temperature adjustment module (203), by being applied to resistance (2032)
Add different heating power so that phase-change material changes between different crystalline phases；
Multiple low-temperature receivers (205), are arranged in substrate (204), for reducing the temperature of wafer erecting bed.
2. temperature control wafer erecting bed as described in claim 1, which is characterized in that the shape of the heater (202) is circle
Ring shape.
3. temperature control wafer erecting bed as claimed in claim 2, which is characterized in that the arrangement of the heater (202)
It is arranged to single area, two-region or multizone heater.
4. temperature control wafer erecting bed as described in claim 1, which is characterized in that the temperature adjustment module (203) is set
Either be arranged on above the heater (202) below heater (202) or be arranged on simultaneously heater (202) top and
Lower section.
5. temperature control wafer erecting bed as described in claim 1, which is characterized in that the quantity of the drive control circuit and temperature
The quantity of degree adjustment module (203) is identical, and independent drive control is electrically connected in each temperature adjustment module (203)
Circuit.
6. temperature control wafer erecting bed as claimed in claim 4, which is characterized in that the shape of the temperature adjustment module (203)
Shape is single disc or multiple concentric ring-like or cellular arrangements or matrix arrangement or linear array arrangement shape
Formula.
7. a kind of semiconductor etching device, which is characterized in that include：Be arranged in vacuum chamber as arbitrary in claim 1-6
Temperature control wafer erecting bed described in one.
8. the temperature control method of the temperature control wafer erecting bed in a kind of 1-6 such as claim as described in any one, which is characterized in that should
Method includes：The temperature adjustment module that different drive control circuits is connected to it applies heating power to realize phase-change material
Phase transformation makes phase-change material change between crystalline phase and amorphous phase, to change the coefficient of heat conduction of phase-change material, so as to change wafer
The local hot loop Thermal Synthetic coefficient of conductivity in erecting bed, the final local temperature for changing wafer erecting bed；
Wherein, the coefficient of heat conduction of the phase-change material in crystalline phase is less than the coefficient of heat conduction of the phase-change material in amorphous phase；
The hot loop refers to：The thermal balance that heat is formed successively by heater, temperature adjustment module, substrate, low-temperature receiver
Conductive loop；
The local hot loop Thermal Synthetic coefficient of conductivity is the function of the phase-change material coefficient of heat conduction and the substrate coefficient of heat conduction：
K=f (KPhase transformation,KSubstrate), wherein, K is the local hot loop Thermal Synthetic coefficient of conductivity, KPhase transformationIt is the phase-change material coefficient of heat conduction,
KSubstrateIt is the substrate coefficient of heat conduction.
9. the temperature control method of temperature control wafer erecting bed as claimed in claim 8, which is characterized in that the control circuit is to phase
Become material and apply heating power to realize that the method for the phase transformation of phase-change material comprises the steps of：
Resistance of the drive control circuit into temperature adjustment module applies heating power, and resistance heating makes the phase transformation material in crystalline phase
The temperature of material is increased to more than melt temperature, phase-change material cooling after, make phase-change material from crystal transition be amorphous phase；
Resistance of the drive control circuit into temperature adjustment module applies heating power, and resistance heating makes the phase transformation in amorphous phase
The temperature of material is increased to below crystallization temperature more than melt temperature, make phase-change material from amorphous phase transition be crystalline phase.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610979697.0A CN108062124B (en) | 2016-11-08 | 2016-11-08 | Temperature control wafer mounting table and temperature control method thereof |
| TW106108213A TWI648814B (en) | 2016-11-08 | 2017-03-13 | Temperature control wafer mounting table and temperature control method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610979697.0A CN108062124B (en) | 2016-11-08 | 2016-11-08 | Temperature control wafer mounting table and temperature control method thereof |
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| CN108062124A true CN108062124A (en) | 2018-05-22 |
| CN108062124B CN108062124B (en) | 2020-04-07 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111383885A (en) * | 2018-12-27 | 2020-07-07 | 中微半导体设备(上海)股份有限公司 | Substrate mounting table capable of improving temperature control precision and plasma processing equipment |
| CN111383882A (en) * | 2018-12-27 | 2020-07-07 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus and substrate holder for the same |
| CN114275196A (en) * | 2021-12-31 | 2022-04-05 | 中国电子科技集团公司第三十八研究所 | Satellite-borne temperature control and installation integrated plate based on thermoelectric effect |
| WO2023157605A1 (en) * | 2022-02-18 | 2023-08-24 | キヤノン株式会社 | Holding apparatus, lithography apparatus, and method for manufacturing article |
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| CN113405683A (en) * | 2021-05-20 | 2021-09-17 | 长江存储科技有限责任公司 | Wafer temperature measuring method |
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| CN1959391A (en) * | 2006-11-23 | 2007-05-09 | 天津大学 | Method for controlling temperature of heat storage and cold accumulation of liquid containing phase-change material |
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Also Published As
| Publication number | Publication date |
|---|---|
| TW201830570A (en) | 2018-08-16 |
| TWI648814B (en) | 2019-01-21 |
| CN108062124B (en) | 2020-04-07 |
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