CN108048842A - A kind of etching liquid and its application method of nano silver wire conductive film - Google Patents

A kind of etching liquid and its application method of nano silver wire conductive film Download PDF

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Publication number
CN108048842A
CN108048842A CN201711330168.9A CN201711330168A CN108048842A CN 108048842 A CN108048842 A CN 108048842A CN 201711330168 A CN201711330168 A CN 201711330168A CN 108048842 A CN108048842 A CN 108048842A
Authority
CN
China
Prior art keywords
conductive film
nano silver
etching liquid
silver wire
wire conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201711330168.9A
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Chinese (zh)
Inventor
司荣美
潘中海
刘彩风
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tianjin Baoxingwei Technology Co Ltd
Original Assignee
Tianjin Baoxingwei Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tianjin Baoxingwei Technology Co Ltd filed Critical Tianjin Baoxingwei Technology Co Ltd
Priority to CN201711330168.9A priority Critical patent/CN108048842A/en
Publication of CN108048842A publication Critical patent/CN108048842A/en
Pending legal-status Critical Current

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Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions
    • C23F1/16Acidic compositions
    • C23F1/30Acidic compositions for etching other metallic material

Abstract

The present invention is a kind of etching liquid and its application method of nano silver wire conductive film, and the etching liquid component and mass percent are as follows:Acetic acid:10~30%;Ammonium hydroxide:5~10%;Inorganic metal salt:10~20%;Hydrogen peroxide:6~16%;Water-soluble polymer:3~15%;Silica:4%;Carboxymethyl cellulose:3%;Ethylene glycol:2~17%;Deionized water:10~30%.Using the nano silver wire conductive film for preparing of the present invention there is film formation surface electric conductivity to stablize, the characteristics of resistivity is low, light transmittance height, strong adhesive force, preparation process of the invention is simply ripe, and equipment is simple, easy to operate, of low cost, easy to utilize.In addition, the nano silver wire conductive film prepared using the present invention is had, chemical stability is good, and the excellent characteristic of antiseptic property, without strong acid or highly basic, environmental pollution is small, available for fields such as electromagnetic shielding and electronic circuits, has extensively using value.

Description

A kind of etching liquid and its application method of nano silver wire conductive film
Technical field
The present invention relates to a kind of etching liquid technical field more particularly to a kind of nano silver wire conductive film etching liquid and its make Use method.
Background technology
The transparent conductive film of industry manufacture at present is based on oxide, and oxidic transparent conductive film is since it is with relatively low Resistivity, high visible light transmissivity the advantages that and as transparent electrode be widely used in plane show, solar cell, touch Screen, can heated glass window it is medium.ITO (Indium Tin Oxide) is current most widely used transparent material, and ITO is a kind of N-type oxide semiconductor-tin indium oxide, two indexs of evaluation ito thin film quality most critical are light transmittance and conductivity, in oxygen In compound conductive film, to mix the In of Sn2O3(ITO) transmitance highest and electric conductivity is best, and light transmittance is led up to more than 90% Electrically while light transmittance 90%, reach 10-100ohm/sq.But the material have it is more crisp, preparation temperature is higher, and And the shortcomings of expensive.A kind of relatively cheap method for preparing transparent electrode material is developed at present, and with excellent Electricity, optics and mechanical property become the direction of industry effort always.
The content of the invention
Present invention seek to address that the deficiencies in the prior art, and etching liquid and its use of a kind of nano silver wire conductive film are provided Method.
The present invention to achieve the above object, using following technical scheme:
A kind of etching liquid of nano silver wire conductive film, which is characterized in that the etching liquid component and mass percent are as follows:
Acetic acid:10~30%;
Ammonium hydroxide:5~10%;
Inorganic metal salt:10~20%;
Hydrogen peroxide:6~16%;
Water-soluble polymer:3~15%;
Silica:4%;
Carboxymethyl cellulose:3%;
Ethylene glycol:2~17%;
Deionized water:10~30%.
Further, the mass fraction of the acetic acid is 65%, and the mass fraction of the ammonium hydroxide is 25%~28%.
Further, the inorganic metal salt includes one or more of ferric acetate, iron chloride, potassium acetate.
Further, the water-soluble polymer includes modified cellulose, polyvinyl alcohol, one kind or several of polyethylene glycol Kind.
The present invention also provides a kind of application methods of the etching liquid of above-mentioned nano silver wire conductive film, which is characterized in that by silver Nano wire conductive film is immersed in etching liquid, then room temperature 5-15 minutes cleans nano silver wire conductive film with pure water, will Nano silver wire conductive film is air-dried or dried.
The beneficial effects of the invention are as follows:The nano silver wire conductive film prepared using the present invention has film formation surface electric conductivity The characteristics of stable, resistivity is low, and light transmittance is high, strong adhesive force, preparation process of the invention is simply ripe, and equipment is simple, It is easy to operate, it is of low cost, it is easy to utilize.In addition, the nano silver wire conductive film prepared using the present invention has chemistry surely Qualitative good, the excellent characteristic of antiseptic property, without strong acid or highly basic, environmental pollution is small, available for electromagnetic shielding and electronics electricity The fields such as road have extensively using value.
Specific embodiment
With reference to embodiment, the invention will be further described:
The etching liquid of 1 a kind of nano silver wire conductive film of embodiment, which is characterized in that the etching liquid component and quality percentage Than as follows:
Acetic acid:30%;
Ammonium hydroxide:10%;
Ferric acetate:20%;
Hydrogen peroxide:16%;
Modified cellulose:3%;
Silica:4%;
Carboxymethyl cellulose:3%;
Ethylene glycol:2%;
Deionized water:12%.
A kind of application method of the etching liquid of above-mentioned nano silver wire conductive film, which is characterized in that by nano silver wire conductive film It is immersed in above-mentioned etching liquid, then room temperature 15 minutes cleans nano silver wire conductive film with pure water, nano silver wire is led Electrolemma is air-dried or dried.
The etching liquid of 2 a kind of nano silver wire conductive film of embodiment, which is characterized in that the etching liquid component and quality percentage Than as follows:
Acetic acid:10%;
Ammonium hydroxide:5%;
Ferric acetate:10%;
Hydrogen peroxide:6%;
Modified cellulose:15%;
Silica:4%;
Carboxymethyl cellulose:3%;
Ethylene glycol:17%;
Deionized water:30%.
A kind of application method of the etching liquid of above-mentioned nano silver wire conductive film, which is characterized in that by nano silver wire conductive film It is immersed in above-mentioned etching liquid, then room temperature 10 minutes cleans nano silver wire conductive film with pure water, nano silver wire is led Electrolemma is air-dried or dried.
The etching liquid of 3 a kind of nano silver wire conductive film of embodiment, which is characterized in that the etching liquid component and quality percentage Than as follows:
Acetic acid:20%;
Ammonium hydroxide:8%;
Ferric acetate:10%;
Hydrogen peroxide:8%;
Modified cellulose:12%;
Silica:4%;
Carboxymethyl cellulose:3%;
Ethylene glycol:5%;
Deionized water:30%.
A kind of application method of the etching liquid of above-mentioned nano silver wire conductive film, which is characterized in that by nano silver wire conductive film It is immersed in above-mentioned etching liquid, then room temperature 5 minutes cleans nano silver wire conductive film with pure water, nano silver wire is led Electrolemma is air-dried or dried.
The etching liquid of 4 a kind of nano silver wire conductive film of embodiment, which is characterized in that the etching liquid component and quality percentage Than as follows:
Acetic acid:30%;
Ammonium hydroxide:10%;
Ferric acetate:15%;
Hydrogen peroxide:6%;
Modified cellulose:12%;
Silica:4%;
Carboxymethyl cellulose:3%;
Ethylene glycol:10%;
Deionized water:10%.
A kind of application method of the etching liquid of above-mentioned nano silver wire conductive film, which is characterized in that by nano silver wire conductive film It is immersed in above-mentioned etching liquid, then room temperature 12 minutes cleans nano silver wire conductive film with pure water, nano silver wire is led Electrolemma is air-dried or dried.
The present invention is exemplarily described above, it is clear that present invention specific implementation is not subject to the restrictions described above, As long as it employs the various improvement of inventive concept and technical scheme of the present invention progress or not improved directly applies to other fields It closes, within protection scope of the present invention.

Claims (5)

1. a kind of etching liquid of nano silver wire conductive film, which is characterized in that the etching liquid component and mass percent are as follows:
Acetic acid:10~30%;
Ammonium hydroxide:5~10%;
Inorganic metal salt:10~20%;
Hydrogen peroxide:6~16%;
Water-soluble polymer:3~15%;
Silica:4%;
Carboxymethyl cellulose:3%;
Ethylene glycol:2~17%;
Deionized water:10~30%.
A kind of 2. etching liquid of nano silver wire conductive film according to claim 1, which is characterized in that the quality of the acetic acid Fraction is 65%, and the mass fraction of the ammonium hydroxide is 25%~28%.
A kind of 3. etching liquid of nano silver wire conductive film according to claim 1, which is characterized in that the inorganic metal salt Including one or more of ferric acetate, iron chloride, potassium acetate.
A kind of 4. etching liquid of nano silver wire conductive film according to claim 1, which is characterized in that the water-soluble polymeric Object includes modified cellulose, polyvinyl alcohol, the one or more of polyethylene glycol.
5. a kind of application method of the etching liquid of nano silver wire conductive film as described in claim 1, which is characterized in that receive silver Rice noodles conductive film is immersed in etching liquid, then room temperature 5-15 minutes cleans nano silver wire conductive film, by silver with pure water Nano wire conductive film is air-dried or dried.
CN201711330168.9A 2017-12-13 2017-12-13 A kind of etching liquid and its application method of nano silver wire conductive film Pending CN108048842A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201711330168.9A CN108048842A (en) 2017-12-13 2017-12-13 A kind of etching liquid and its application method of nano silver wire conductive film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201711330168.9A CN108048842A (en) 2017-12-13 2017-12-13 A kind of etching liquid and its application method of nano silver wire conductive film

Publications (1)

Publication Number Publication Date
CN108048842A true CN108048842A (en) 2018-05-18

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201711330168.9A Pending CN108048842A (en) 2017-12-13 2017-12-13 A kind of etching liquid and its application method of nano silver wire conductive film

Country Status (1)

Country Link
CN (1) CN108048842A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020171051A1 (en) * 2019-02-19 2020-08-27 Dic株式会社 Etching liquid for silver, and method for producing printed wiring board using same
EP3817523A4 (en) * 2018-06-26 2022-03-16 DIC Corporation Method of manufacturing printed wiring board
EP3817524A4 (en) * 2018-06-26 2022-03-16 DIC Corporation Method of manufacturing printed wiring board
US11639470B2 (en) 2020-12-28 2023-05-02 Samsung Display Co., Ltd. Etching composition for thin film containing silver, method for forming pattern and method for manufacturing a display device using the same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103215592A (en) * 2013-04-27 2013-07-24 苏州诺菲纳米科技有限公司 Etching cream, applications of etching cream, and method for etching nano silver conductive material by utilizing etching cream
CN104962919A (en) * 2015-07-31 2015-10-07 合肥微晶材料科技有限公司 Silver nanowire etching solution and etching method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103215592A (en) * 2013-04-27 2013-07-24 苏州诺菲纳米科技有限公司 Etching cream, applications of etching cream, and method for etching nano silver conductive material by utilizing etching cream
CN104805441A (en) * 2013-04-27 2015-07-29 苏州诺菲纳米科技有限公司 Etching paste, application of etching paste and method for etching nanosilver conductive material by utilizing etching paste
CN104962919A (en) * 2015-07-31 2015-10-07 合肥微晶材料科技有限公司 Silver nanowire etching solution and etching method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3817523A4 (en) * 2018-06-26 2022-03-16 DIC Corporation Method of manufacturing printed wiring board
EP3817524A4 (en) * 2018-06-26 2022-03-16 DIC Corporation Method of manufacturing printed wiring board
WO2020171051A1 (en) * 2019-02-19 2020-08-27 Dic株式会社 Etching liquid for silver, and method for producing printed wiring board using same
JPWO2020171051A1 (en) * 2019-02-19 2021-03-11 Dic株式会社 Etching solution for silver and manufacturing method of printed wiring board using it
CN113260736A (en) * 2019-02-19 2021-08-13 Dic株式会社 Etching solution for silver and method for manufacturing printed wiring board using same
US11639470B2 (en) 2020-12-28 2023-05-02 Samsung Display Co., Ltd. Etching composition for thin film containing silver, method for forming pattern and method for manufacturing a display device using the same

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Application publication date: 20180518

RJ01 Rejection of invention patent application after publication