CN108039346B - High-voltage-resistant photoelectric coupler - Google Patents
High-voltage-resistant photoelectric coupler Download PDFInfo
- Publication number
- CN108039346B CN108039346B CN201711277260.3A CN201711277260A CN108039346B CN 108039346 B CN108039346 B CN 108039346B CN 201711277260 A CN201711277260 A CN 201711277260A CN 108039346 B CN108039346 B CN 108039346B
- Authority
- CN
- China
- Prior art keywords
- voltage
- resistant
- photoelectric coupler
- integrated circuit
- oblique angle
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention relates to a high-voltage-resistant photoelectric coupler, which comprises a closed tube shell, a signal input pin and a signal output pin, wherein the signal input pin and the signal output pin are respectively connected with the head end and the tail end of the closed tube shell; the semiconductor light receiver is a photosensitive integrated circuit chip provided with an oblique angle mesa structure. The method has the advantages of low cost, simple process operation and high yield, and the prepared photoelectric coupler has good high-pressure resistance.
Description
Technical Field
The invention relates to the technical field of semiconductor packaging, in particular to a high-voltage-resistant photoelectric coupler.
Background
The photoelectric coupler is an electric-to-optical-to-electric conversion device for transmitting electric signals by using light as a medium. It is composed of two parts of luminous source and light receiver. The light source and the light receiver are assembled in the same closed shell and are isolated from each other by a transparent insulator. The pin of the light source is an input end, the pin of the light receiver is an output end, the common light source is a light emitting diode, and the light receiver is a photosensitive diode, a phototriode and the like.
A photo coupler (optical coupler, abbreviated as OC in english) is also called a photo isolator, abbreviated as an opto coupler. The photocoupler transmits an electric signal using light as a medium. It has good isolation function to input and output electric signals, so it is widely used in various circuits. At present, the photoelectric device becomes one of the most various photoelectric devices with the most application. An optical coupler generally consists of three parts: light emission, light reception and signal amplification. The input electrical signal drives a Light Emitting Diode (LED) to emit light with a certain wavelength, the light emitting diode is received by a light detector to generate a photocurrent, and the photocurrent is further amplified and then output. This completes the electro-optic-electric conversion, thereby playing the role of input, output and isolation. Because the input and the output of the optical coupler are isolated from each other, the electric signal transmission has the characteristics of unidirectionality and the like, thereby having good electric insulation capability and anti-interference capability.
The photoelectric coupler is a semiconductor optoelectronic device which is formed by packaging a light-emitting device and a photosensitive device in the same shell and transmitting an electric signal through electric → optical → electric conversion in the middle. Among them, the light emitting device is generally a light emitting diode. The types of photosensitive devices are many, and besides photodiodes, there are phototriodes, photoresistors, photothyristors and the like. The photoelectric couplers can be combined into a plurality of series of photoelectric couplers by different types of light-emitting devices and photosensitive devices according to different requirements.
The existing photoelectric coupler is compatible with TTL or CMOS level, is limited by the internal chip process structure, has working voltage below 20V generally, cannot be applied to occasions with higher voltage, and has limited application range.
Disclosure of Invention
The invention aims to solve the technical problem of providing a photoelectric coupler with low cost, simple process operation, high yield and excellent high-voltage resistance.
The technical scheme for solving the technical problems is as follows: a high-voltage-resistant photoelectric coupler comprises a sealed tube shell, a signal input pin and a signal output pin, wherein the signal input pin and the signal output pin are respectively connected to the head end and the tail end of the sealed tube shell; the semiconductor light receiver is a photosensitive integrated circuit chip provided with an oblique angle mesa structure.
On the basis of the technical scheme, the invention can be further improved as follows.
Further, the preparation method of the photosensitive integrated chip with the oblique angle mesa structure comprises the following steps:
arranging an epitaxial layer with reasonable thickness and resistivity on a transistor of the photosensitive integrated circuit chip;
a bevel table top structure is carved on the transistor CB knot by adopting a grinding wheel groove cutting machine;
preparing a glass material with specific requirements, and passivating the oblique angle mesa structure by using a special glass material;
the high-voltage-resistant photosensitive integrated circuit chip is designed by adopting a high-back-voltage bipolar integrated circuit process technology through chip design.
Furthermore, the thickness of the epitaxial layer is 60-80 μm, and the resistivity is 90-110 Ω · cm.
Further, the end face of the bevel mesa structure is flush with the epitaxial layer.
Further, the specific structural parameters of the bevel mesa structure are as follows: the width of the notch is 10-15 μm, and the depth of the notch is 50-60 μm.
Further, the specific parameters of the glass material are as follows: the glass mainly comprises ZnO, B2O3 and SiO2, and is doped with a small amount of PbO and Sb2O3 additives, the density is about 3.8g/cm3, and the thermal expansion coefficient is about 4.5 multiplied by 10 < -6 >/DEG C.
The invention has the beneficial effects that:
according to the photoelectric coupler, the thickness and the resistivity of the epitaxial layer of the transistor are reasonably set, so that the in-vivo breakdown voltage of the photosensitive integrated chip in the photoelectric coupler is improved. Meanwhile, a table glass passivation technology is adopted, an oblique angle table structure is carved on the surface of the transistor CB junction by a grinding wheel notching machine, and then a glass material is used for passivation, so that the surface electric field is effectively relieved, and the surface breakdown voltage is improved.
Drawings
FIG. 1 is a chip layout of a high voltage resistant photocoupler of the present invention;
FIG. 2 is a longitudinal structural view of a high voltage resistant photocoupler I of the present invention;
FIG. 3 is a second longitudinal structural view of a high voltage resistant photocoupler of the present invention;
FIG. 4 is a diagram of an internal circuit of a high voltage resistant photocoupler chip according to the present invention.
Detailed Description
The principles and features of this invention are described below in conjunction with the following drawings, which are set forth by way of illustration only and are not intended to limit the scope of the invention.
As shown in fig. 1-4, a high voltage resistant photocoupler comprises a sealed tube shell, a signal input pin and a signal output pin which are respectively connected with the head end and the tail end of the sealed tube shell, wherein a semiconductor light emitter and a semiconductor light receiver are respectively arranged on two opposite side walls inside the sealed tube shell, the semiconductor light emitter is electrically connected with the signal input pin, and the semiconductor light receiver is electrically connected with the signal output pin; the semiconductor light receiver is a photosensitive integrated circuit chip provided with an oblique angle mesa structure 1.
The preparation method of the photosensitive integrated chip with the oblique angle mesa structure comprises the following steps:
arranging an epitaxial layer with reasonable thickness and resistivity on a transistor of the photosensitive integrated circuit chip;
a bevel table top structure 1 is carved on the transistor CB knot by adopting a grinding wheel groove cutting machine;
preparing a glass 2 material with specific requirements, and passivating the oblique angle mesa structure by using a special glass material;
the high-voltage-resistant photosensitive integrated circuit chip is designed by adopting a high-back-voltage bipolar integrated circuit process technology through chip design.
The thickness of the epitaxial layer is 60-80 mu m, and the resistivity is 90-110 omega cm. The end face of the oblique angle mesa structure is flush with the epitaxial layer.
The specific structural parameters of the oblique angle table top structure are as follows: the width of the notch is 10-15 μm, and the depth of the notch is 50-60 μm). The specific parameters of the glass material (the glass takes ZnO, B2O3 and SiO2 as main bodies, a small amount of PbO and Sb2O3 additives are added, the density is about 3.8g/cm3, and the thermal expansion coefficient is about 4.5 multiplied by 10 < -6 >/DEG C.
The working voltage of the photoelectric coupler is determined by the working voltage of an integrated circuit at the output end of the photoelectric coupler, and in order to improve the working voltage, the collector-emitter breakdown voltage BVCEO of a photosensitive integrated circuit chip is heavily considered in chip design. BVCEO in a transistor depends mainly on the thickness of the epitaxial layer and its resistivity. The thickness of the epitaxial layer can be increased to improve the working withstand voltage, and the resistivity of the epitaxial layer can be properly increased at the same time, because the thickness of the epitaxial layer cannot be too thick to ensure the working speed.
At the end of the CB junction, a depletion region is bent under the influence of surface factors, so that a surface electric field is concentrated, surface breakdown occurs before in-vivo breakdown, and the withstand voltage value is reduced. Therefore, the junction termination technology must be adopted to relieve the surface electric field, so as to meet the requirement of high withstand voltage. An oblique mesa is scribed on the CB junction and passivated by a special glass material, so that the leakage current can be obviously reduced and the surface electric field can be relieved.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (4)
1. A high-voltage-resistant photoelectric coupler comprises a sealed tube shell, a signal input pin and a signal output pin, wherein the signal input pin and the signal output pin are respectively connected to the head end and the tail end of the sealed tube shell; the method is characterized in that: the semiconductor light receiver is a photosensitive integrated circuit chip provided with an oblique angle mesa structure; the preparation method of the photosensitive integrated chip with the oblique angle mesa structure comprises the following steps:
arranging an epitaxial layer with the thickness of 60-80 mu m and the resistivity of 90-110 omega cm on a transistor of the photosensitive integrated circuit chip;
a bevel table top structure is carved on the transistor CB knot by adopting a grinding wheel groove cutting machine;
preparing a glass material with specific requirements, and passivating the oblique angle mesa structure by using a special glass material;
the high-voltage-resistant photosensitive integrated circuit chip is designed by adopting a high-back-voltage bipolar integrated circuit process technology through chip design.
2. The high voltage resistant photocoupler of claim 1, wherein said angled mesa end face is flush with the epitaxial layer.
3. The high-voltage-resistant photoelectric coupler as claimed in claim 1, wherein the specific structural parameters of the oblique angle mesa structure are as follows: the width of the notch is 10-15 μm, and the depth of the notch is 50-60 μm.
4. The high-voltage-resistant photoelectric coupler is characterized in that the specific parameters of the glass material with specific requirements are as follows: the glass takes ZnO, B2O3 and SiO2 as main bodies, a small amount of PbO and Sb2O3 additives are added, the density is 3.8g/cm3, and the thermal expansion coefficient is 4.5 multiplied by 10 < -6 >/DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711277260.3A CN108039346B (en) | 2017-12-06 | 2017-12-06 | High-voltage-resistant photoelectric coupler |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711277260.3A CN108039346B (en) | 2017-12-06 | 2017-12-06 | High-voltage-resistant photoelectric coupler |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108039346A CN108039346A (en) | 2018-05-15 |
| CN108039346B true CN108039346B (en) | 2021-09-07 |
Family
ID=62095520
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711277260.3A Active CN108039346B (en) | 2017-12-06 | 2017-12-06 | High-voltage-resistant photoelectric coupler |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108039346B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201413826Y (en) * | 2009-05-21 | 2010-02-24 | 绍兴旭昌科技企业有限公司 | Mesa type glass passivated diode chip |
| CN103730456A (en) * | 2014-01-07 | 2014-04-16 | 苏州承源光电科技有限公司 | High-pressure-resistant photoelectric coupler |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI237907B (en) * | 2003-08-08 | 2005-08-11 | Macroblock Inc | A light-emitting semiconductor device |
| CN205406526U (en) * | 2016-03-07 | 2016-07-27 | 无锡固电半导体股份有限公司 | Low voltage and high current silicon NPN type power transistor |
-
2017
- 2017-12-06 CN CN201711277260.3A patent/CN108039346B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201413826Y (en) * | 2009-05-21 | 2010-02-24 | 绍兴旭昌科技企业有限公司 | Mesa type glass passivated diode chip |
| CN103730456A (en) * | 2014-01-07 | 2014-04-16 | 苏州承源光电科技有限公司 | High-pressure-resistant photoelectric coupler |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108039346A (en) | 2018-05-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH07312443A (en) | Semiconductor device | |
| Huang et al. | A high-speed and high-responsivity photodiode in standard CMOS technology | |
| CN103872168A (en) | Photoelectric detector for use in silicon-based photoelectric integrated circuit chip and manufacturing method thereof | |
| CN103701533A (en) | Standard SiGe bipolar complementary metal-oxide-semiconductor transistor (BiCMOS) process-based optoelectronic integrated receiver | |
| CN108039346B (en) | High-voltage-resistant photoelectric coupler | |
| CN209088922U (en) | High-speed isolated communicating circuit based on low speed optocoupler | |
| ITTO20120584A1 (en) | HIGH FREQUENCY OPTOELECTRONIC DETECTOR | |
| US8742431B2 (en) | Photo-coupler device | |
| CN106783744B (en) | A kind of production method of InP PIN photoelectric detector integrated device | |
| KR20150100652A (en) | Semiconductor optical integrated circuit | |
| CN204517789U (en) | Two-forty optocoupler integrated chip | |
| JPH07120761B2 (en) | Semiconductor integrated circuit with built-in light receiving element | |
| CN204836133U (en) | A optoelectronic coupler for triggering silicon controlled rectifier | |
| CN105280551A (en) | Manufacturing method for self-protection silicon-based APD array device with temperature compensation | |
| WO2016059998A1 (en) | Optical interconnection device | |
| CN103515494A (en) | Chip structure capable of reducing super-radiation LED spectrum ripple | |
| US20240154054A1 (en) | Optocoupler | |
| CN211151963U (en) | Optical module | |
| JPS58193B2 (en) | Semiconductor optical detection device | |
| CN107393985B (en) | A kind of back-illuminated type snowslide light-sensitive device and preparation method thereof | |
| CN204578516U (en) | A kind of photoelectrical coupler | |
| KR200317021Y1 (en) | Photocoupler having high current transfer ratio | |
| JPS61131479A (en) | Semiconductor device | |
| CN105226154A (en) | A kind of LED chip structure and manufacture method | |
| JPH04373181A (en) | Photocoupler |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20200109 Address after: 400060 Chongqing Nanping Nan'an District No. 14 Huayuan Road Applicant after: The 44th Research Institute of China Electronic Science and Technology Group Corporation Address before: 401332 No. 367 Xiyong Road, Xiyong Town Micropower Park, Shapingba District, Chongqing Applicant before: China Electric Technology Group Chongqing acoustic photoelectric Co., Ltd. |
|
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |