CN108038841A - A kind of silicon chip LD defect inspection methods and device - Google Patents
A kind of silicon chip LD defect inspection methods and device Download PDFInfo
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Abstract
The invention discloses a kind of silicon chip LD defect inspection methods and device, the described method includes:The corresponding image-region of silicon chip in silicon chip image is divided at least two first subregions, determines the corresponding gradient mean value of each first subregion;For each first subregion, judge whether the corresponding gradient mean value of the first subregion is more than default Grads threshold;If so, determine that there are LD defects for silicon chip position corresponding with first subregion.Due in embodiments of the present invention, the corresponding image-region of silicon chip in silicon chip image is divided at least two first subregions, whether default Grads threshold is more than according to the corresponding gradient mean value of each first subregion, determine that silicon chip position corresponding with each first subregion whether there is LD defects, without strengthening into row threshold division and contrast the corresponding image-region of silicon chip in silicon chip image, the interference of silicon chip background texture is avoided, improves the accuracy of detection of silicon chip LD defects.
Description
Technical field
The present invention relates to technical field of image processing, more particularly to a kind of silicon chip turning stria (LD) defect inspection method and
Device.
Background technology
Silicon chip be it is a kind of manufacture solar panel basic material, by silicon rod it is sliced, grinding, polishing etc. process obtain
, the quality of silicon chip directly decides the performance of solar panel.The LD defects of silicon chip refer to silicon chip in grinding
During produce, there is the texture defect that regular and contrast is higher than background texture, it is specifically bright at equal intervals by one group of group
Dark alternate vertical bar line composition.
The detection of existing silicon chip LD defects, mainly extracts gray scale in silicon chip image to silicon chip image into row threshold division
Value is more than the pixel of predetermined threshold value, and whether can form connected domain according to the pixel of extraction, it is determined whether there are LD defects.
It is heavier yet with the background texture of silicon chip, and the texture of LD defects is not it is obvious that holding very much compared with the background texture difference of silicon chip
Easily cause missing inspection.In addition the method that can also use contrast to strengthen when to silicon chip image into row threshold division, but because silicon
Piece surface also has background texture, and contrast strengthens the noise jamming that can also improve background texture, further results in accuracy of detection
Decline.
The content of the invention
The present invention provides a kind of silicon chip LD defect inspection methods and device, to solve silicon chip LD defects inspection in the prior art
The problem of precision of survey is not high.
The invention discloses a kind of silicon chip LD defect inspection methods, the described method includes:
The corresponding image-region of silicon chip in silicon chip image is divided at least two first subregions, determines each first son
The corresponding gradient mean value in region;
For each first subregion, judge whether the corresponding gradient mean value of the first subregion is more than default gradient threshold
Value;If so, determine that there are LD defects for silicon chip position corresponding with first subregion.
Further, it is described to determine that the corresponding gradient mean value of each first subregion includes:
For each pixel in each first subregion, according to the pixel the silicon chip image X direction
On first gradient value and y direction on the second Grad sum, determine the Grad of the pixel;
For each first subregion, according to the average value of the Grad of each pixel in first subregion, determine
The corresponding gradient mean value of first subregion.
Further, the first subregion of default Grads threshold is not more than if there is corresponding gradient mean value, by this
First subregion is further included as the second subregion, the method:
For each second subregion, gradient is carried out in each predetermined angle to each pixel in second subregion
Projection, determines variance of second subregion in each predetermined angle gradient projection;Judge second subregion each default
Whether the variance of angle gradient projection is respectively less than default variance threshold values;If not, determine that silicon chip is corresponding with second subregion
There are LD defects for position.
Further, the method further includes:
Record the coordinate in the silicon chip image there are the subregion of LD defects.
Further, it is described by the corresponding image-region of silicon chip in silicon chip image be divided at least two first subregions it
Before, the method further includes:
The radius of the corresponding image-region of silicon chip in the silicon chip image is identified, according to default radius factor and the silicon
The radius of the corresponding image-region of piece, determines the radius of the corresponding central area of silicon chip;
According to the radius of the corresponding central area of the silicon chip, during silicon chip is corresponding in the corresponding image-region of removal silicon chip
Heart district domain, determines the corresponding object region of silicon chip in silicon chip image;
It is described the corresponding image-region of silicon chip in silicon chip image is divided at least two first subregions to include:
The corresponding object region of the silicon chip is divided at least two first subregions.
The invention discloses a kind of silicon chip LD defect detecting devices, described device includes:
Determining module is divided, for the corresponding image-region of silicon chip in silicon chip image to be divided at least two first sub-districts
Domain, determines the corresponding gradient mean value of each first subregion;
First determining module, for for each first subregion, judging that the corresponding gradient mean value of the first subregion is
It is no to be more than default Grads threshold;If so, determine that there are LD defects for silicon chip position corresponding with first subregion.
Further, the division determining module, specifically for for each pixel in each first subregion, root
According to the sum of second Grad of the pixel in the first gradient value and y direction in the X direction of the silicon chip image,
Determine the Grad of the pixel;For each first subregion, according to the Grad of each pixel in first subregion
Average value, determine the corresponding gradient mean value of the first subregion.
Further, described device further includes:
Second determining module, for being not more than the first sub-district of default Grads threshold if there is corresponding gradient mean value
Domain, using first subregion as the second subregion, for each second subregion, to each pixel in second subregion
Point carries out gradient projection in each predetermined angle, determines variance of second subregion in each predetermined angle gradient projection;Sentence
Whether disconnected second subregion is respectively less than default variance threshold values in the variance of each predetermined angle gradient projection;If not, really
Determining silicon chip position corresponding with second subregion, there are LD defects.
Further, described device further includes:
Logging modle, for recording the coordinate there are the subregion of LD defects in the silicon chip image.
Further, the division determining module, specifically for identifying the corresponding image district of silicon chip in the silicon chip image
The radius in domain, according to default radius factor and the radius of the corresponding image-region of the silicon chip, determines the corresponding center of silicon chip
The radius in region;According to the radius of the corresponding central area of the silicon chip, remove silicon chip in the corresponding image-region of silicon chip and correspond to
Central area, determine the corresponding object region of silicon chip in silicon chip image;By the corresponding object region of the silicon chip
It is divided at least two first subregions.
The invention discloses a kind of silicon chip LD defect inspection methods and device, the described method includes:By silicon in silicon chip image
The corresponding image-region of piece is divided at least two first subregions, determines the corresponding gradient mean value of each first subregion;Pin
To each first subregion, judge whether the corresponding gradient mean value of the first subregion is more than default Grads threshold;If so,
Determine that there are LD defects for silicon chip position corresponding with first subregion.Due in embodiments of the present invention, by silicon chip image
The corresponding image-region of silicon chip is divided at least two first subregions, is according to the corresponding gradient mean value of each first subregion
It is no to be more than default Grads threshold, determine that silicon chip position corresponding with each first subregion whether there is LD defects, without right
The corresponding image-region of silicon chip strengthens into row threshold division and contrast in silicon chip image, avoids the dry of silicon chip background texture
Disturb, improve the accuracy of detection of silicon chip LD defects.
Brief description of the drawings
Fig. 1 is a kind of silicon chip LD defect inspection process schematic diagrames that the embodiment of the present invention 1 provides;
Fig. 2 is a kind of silicon chip LD defect inspection process schematic diagrames that the embodiment of the present invention 4 provides;
Fig. 3 is the corresponding image-region schematic diagram of a kind of silicon chip that the embodiment of the present invention 5 provides;
Fig. 4 is a kind of silicon chip LD defect detecting device structure diagrams that the embodiment of the present invention 6 provides.
Embodiment
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other without creative efforts
Embodiment, belongs to the scope of protection of the invention.
Embodiment 1:
Fig. 1 is a kind of silicon chip LD defect inspection process schematic diagrames provided in an embodiment of the present invention, which includes:
S101:The corresponding image-region of silicon chip in silicon chip image is divided at least two first subregions, is determined each
The corresponding gradient mean value of first subregion.
Silicon chip LD defect inspection methods provided in an embodiment of the present invention, applied to electronic equipment, which can put down
The equipment such as plate computer, personal computer (PC), server.
Specifically, because in silicon chip image, the corresponding pixel value section of pixel is being set in the corresponding image-region of silicon chip
In fixed pixel value range, therefore it can determine that silicon chip corresponds in silicon chip image according to the pixel value of pixel in silicon chip image
Image-region, and according to the quantity of the first subregion set in advance, to the corresponding image-region of silicon chip in silicon chip image into
The division of the first subregion of row, wherein the quantity of the first subregion set in advance is at least two.The silicon in silicon chip image
, can be according to the quantity of the first subregion set in advance when the corresponding image-region of piece carries out the division of the first subregion, will
The corresponding image-region random division of silicon chip is the first subregion of the quantity in silicon chip image, the area of different first subregions
It is equal or different;Can also be according to the quantity of the first subregion set in advance, by the corresponding image of silicon chip in silicon chip image
Region is divided into the first subregion of the quantity, the area equation of different first subregions.
In addition, because silicon chip under normal conditions only can be in subregion there are LD defects, in order to prevent because of a certain first sub-district
Domain area is excessive, causes the missing inspection of silicon chip LD defects, influences the precision of silicon chip LD defects detections, in embodiments of the present invention, also
The area of the corresponding image-region of silicon chip and the correspondence of the first subregion quantity can be pre-set.Electronic equipment is by silicon
, can be according to the corresponding image-region area of silicon chip, really when the corresponding image-region of piece is divided at least two first subregions
The quantity of the first subregion divided is needed calmly, and the first subregion is carried out to the corresponding image-region of silicon chip according to the quantity
Division.Preferably, cause the area of the first subregion of part excessive because the corresponding area of the first subregion is different in order to prevent,
The precision of silicon chip LD defects detections is influenced, for each basic phase of first subregion area of the corresponding image-region division of silicon chip
Deng.
Such as:The area and the correspondence of the first subregion quantity of the corresponding image-region of pre-set silicon chip be:
Area is less than 9cm2The quantity of corresponding first subregion is 5, area is more than or equal to 9cm2Less than or equal to 15cm2Corresponding first son
The quantity in region is 8, area is more than or equal to 15cm2Less than or equal to 21cm2The quantity of corresponding first subregion is 12, area
More than or equal to 21cm2The quantity of corresponding first subregion is 15, and the area of the corresponding image-region of silicon chip is 10cm2, corresponding the
The quantity of one subregion is 8, and the corresponding image-region of silicon chip is divided into 8 the first subregions.
After the corresponding image-region of silicon chip in silicon chip image is divided at least two first subregions, for each first
Subregion, according to the pixel value of each pixel in first subregion, determines the ladder of each pixel in first subregion
Angle value, and according to the average of the Grad of each pixel in first subregion, determine the corresponding gradient of the first subregion
Average.
S102:For each first subregion, it is default to judge whether the corresponding gradient mean value of the first subregion is more than
Grads threshold;If so, determine that there are LD defects for silicon chip position corresponding with first subregion.
Because of LD defects, by one group of group, the alternate vertical bar line of light and shade forms at equal intervals, when the corresponding position of silicon wafer of the first subregion
There are during LD defects, also the first subregion can be caused there are one group of group alternate vertical bar line of light and shade at equal intervals in the first subregion
Corresponding gradient mean value increase.
Specifically, being directed to each first subregion, it is default to judge whether the corresponding gradient mean value of the first subregion is more than
Grads threshold, if so, determining that there are LD defects for silicon chip position corresponding with first subregion.Such as:First subregion A
Corresponding gradient mean value is that the corresponding gradient mean values of the 15, first subregion B are that the corresponding gradient mean values of the 18, first subregion C are
68, default Grads threshold be 50, the corresponding gradient mean values of the first subregion C are more than default Grads threshold, determine silicon chip and
There are LD defects for the corresponding positions of first subregion C.
Due in embodiments of the present invention, the corresponding image-region of silicon chip in silicon chip image being divided at least two first
Whether subregion, be more than default Grads threshold according to the corresponding gradient mean value of each first subregion, determine silicon chip with it is each
The corresponding position of first subregion whether there is LD defects, without carrying out threshold value to the corresponding image-region of silicon chip in silicon chip image
Segmentation and contrast enhancing, avoid the interference of silicon chip background texture, improve the accuracy of detection of silicon chip LD defects.
Embodiment 2:
It is in embodiments of the present invention, described to determine each the on the basis of above-described embodiment in order to improve detection efficiency
The corresponding gradient mean value of one subregion includes:
For each pixel in each first subregion, according to the pixel the silicon chip image X direction
On first gradient value and y direction on the second Grad sum, determine the Grad of the pixel;
For each first subregion, according to the average value of the Grad of each pixel in first subregion, determine
The corresponding gradient mean value of first subregion.
Specifically, for each pixel in each first subregion, can be according to the pixel value of the pixel, and be somebody's turn to do
The pixel value of pixel two pixels adjacent in the X direction of silicon chip image, determine the pixel respectively with above-mentioned phase
The absolute value of the pixel value of two adjacent pixels, and by the pixel picture with above-mentioned two adjacent pixels respectively
The average of the absolute value of plain value difference value, as first gradient value of the pixel in silicon chip image X direction;Of course,
Can be by the pixel value of the pixel, with any one pixel adjacent with the pixel in the X direction of silicon chip image
Pixel value difference absolute value, as first gradient value of the pixel in silicon chip image X direction.
Similarly, can be according to the pixel value of the pixel, and in silicon for each pixel in each first subregion
The pixel value of two pixel adjacent with the pixel on the y direction of picture, determine the pixel respectively with above-mentioned phase
The absolute value of the pixel value of two adjacent pixels, and by the pixel picture with above-mentioned two adjacent pixels respectively
The average of the absolute value of plain value difference value, as second Grad of the pixel on silicon chip image y direction;Of course,
Can be by the pixel value of the pixel, with any one pixel adjacent with the pixel on the y direction of silicon chip image
Pixel value difference absolute value, as second Grad of the pixel on silicon chip image y direction.
Determine first gradient value in silicon chip image X direction of each pixel in the first subregion and in silicon chip figure
After the second Grad on y direction, for each pixel in the first subregion, according to the pixel in silicon chip image
X direction on first gradient value and y direction on the second Grad sum, determine the Grad of the pixel.
Embodiment 3:
In order to further improve accuracy of detection, the reason for preventing because of silicon chip LD defect directions, cause to silicon chip LD defects
Missing inspection, on the basis of the various embodiments described above, in embodiments of the present invention, if there is corresponding gradient mean value no more than default
Grads threshold the first subregion, further included using first subregion as the second subregion, the method:
For each second subregion, gradient is carried out in each predetermined angle to each pixel in second subregion
Projection, determines variance of second subregion in each predetermined angle gradient projection;Judge second subregion each default
Whether the variance of angle gradient projection is respectively less than default variance threshold values;If not, determine that silicon chip is corresponding with second subregion
There are LD defects for position.
Specifically, be not more than the first subregion of default Grads threshold if there is corresponding gradient mean value, by this
One subregion is as the second subregion, for each second subregion, using the center of second subregion as pivot, each
Predetermined angle is rotated respectively for rotation angle, and to according to every in postrotational second subregion of each predetermined angle
A pixel, carries out gradient projection in the X direction of silicon chip image respectively, calculates second subregion in each preset angle
Spend the variance of gradient projection.Preferably, predetermined angle covers 360 degree of scope, such as predetermined angle includes:10 degree, 20 degree, 30
Degree ... 360 degree.Of course, can also determine rotation angle according to default rotary step, such as:Default rotary step is 5
Degree, using 5 degree, 10 degree, 15 degree ... 360 degree as rotation angle.
In addition, in order to improve detection efficiency, the second subregion is calculated in the variance of each predetermined angle gradient projection, also
According to second subregion in the gradient projection of each predetermined angle second subregion can be determined in each predetermined angle
The corresponding gradient projection histogram of gradient projection, and it is corresponding in the gradient projection of each predetermined angle according to second subregion
Gradient projection histogram, calculates variance of second subregion in each predetermined angle gradient projection.In embodiments of the present invention,
According to image in the gradient projection of predetermined angle, it in the variance of predetermined angle gradient projection is the prior art to calculate image, no longer
Repeated.
Each second area is determined after the variance of each predetermined angle gradient projection, for each second area, is judged
Whether second subregion is respectively less than default variance threshold values in the variance of each predetermined angle gradient projection;If not, determine
There are LD defects for silicon chip position corresponding with second subregion.
Embodiment 4:
Silicon chip LD defective locations are determined for the ease of user, in the various embodiments described above, in embodiments of the present invention,
The method further includes:
Record the coordinate in the silicon chip image there are the subregion of LD defects.
If specifically, recorded in silicon chip image there are the subregion of LD defects there are the subregion of LD defects in silicon chip
Coordinate in image.
Fig. 2 is a kind of silicon chip LD defect inspection process schematic diagrames provided in an embodiment of the present invention, which includes:
S201:The corresponding image-region of silicon chip in silicon chip image is divided at least two subregions, determines each sub-district
The corresponding gradient mean value in domain.
S202:For every sub-regions, judge whether the corresponding gradient mean value of the subregion is more than default Grads threshold,
If not, S203 is carried out, if so, carrying out S205.
S203:Gradient projection is carried out in each predetermined angle to each pixel in the subregion, determines the subregion
In the variance of each predetermined angle gradient projection.
S204:Judge whether the subregion is respectively less than default variance threshold in the variance of each predetermined angle gradient projection
Value, if not, S205 is carried out, if it is, terminating.
S205:Determine that there are LD defects for silicon chip position corresponding with the subregion.
S206:Record the coordinate in the silicon chip image there are the subregion of LD defects.
Embodiment 5:
It is in embodiments of the present invention, described by silicon chip figure on the basis of the various embodiments described above in order to improve detection efficiency
The corresponding image-region of silicon chip is divided into before at least two first subregions as in, and the method further includes:
The radius of the corresponding image-region of silicon chip in the silicon chip image is identified, according to default radius factor and the silicon
The radius of the corresponding image-region of piece, determines the radius of the corresponding central area of silicon chip;
According to the radius of the corresponding central area of the silicon chip, during silicon chip is corresponding in the corresponding image-region of removal silicon chip
Heart district domain, determines the corresponding object region of silicon chip in silicon chip image;
It is described the corresponding image-region of silicon chip in silicon chip image is divided at least two first subregions to include:
The corresponding object region of the silicon chip is divided at least two first subregions.
Because LD defects typically occur in silicon chip edge, the central area of silicon chip is usually not in LD defects, in order to improve
Detection efficiency, when carrying out LD defects detections to silicon chip, can remove the central area of silicon chip, not to the central area of silicon chip into
Row detection.Specifically, electronic equipment identifies the radius in silicon chip correspondence image region in silicon chip image, according to default radius factor
And the radius of the corresponding image-region of silicon chip, the radius of the corresponding central area of silicon chip in silicon chip image is determined, according to silicon chip pair
The radius for the central area answered, removes in the corresponding image-region of silicon chip using silicon chip correspondence image regional center as the center of circle, silicon chip
The radius of corresponding central area is the region of radius, determines the corresponding object region of silicon chip in silicon chip image.Determine silicon
Behind the corresponding target area of piece, in order to improve detection efficiency, by the corresponding image-region of silicon chip in silicon chip image be divided into
During few two the first subregions, the corresponding object region of silicon chip is only divided at least two first subregions, for pair
The detection of LD defects.As shown in figure 3, the radius of the corresponding image-region of silicon chip is 10cm, default radius factor is 0.5, is gone
Except using silicon chip correspondence image regional center being center of circle radius as the corresponding center of the silicon chip of 5cm in the corresponding image-region of silicon chip
Domain, determines the corresponding object region of silicon chip.
Embodiment 6:
Fig. 4 is a kind of silicon chip LD defect detecting device structure diagrams provided in an embodiment of the present invention, which includes:
Determining module 41 is divided, for the corresponding image-region of silicon chip in silicon chip image to be divided at least two first sons
Region, determines the corresponding gradient mean value of each first subregion;
First determining module 42, for for each first subregion, judging the corresponding gradient mean value of the first subregion
Whether default Grads threshold is more than;If so, determine that there are LD defects for silicon chip position corresponding with first subregion.
The division determining module 41, specifically for for each pixel in each first subregion, according to the picture
The sum of second Grad of the vegetarian refreshments in the first gradient value and y direction in the X direction of the silicon chip image, determining should
The Grad of pixel;For each first subregion, it is averaged according to the Grad of each pixel in first subregion
Value, determines the corresponding gradient mean value of the first subregion.
Described device further includes:
Second determining module 43, for if there is first son of the corresponding gradient mean value no more than default Grads threshold
Region, using first subregion as the second subregion, for each second subregion, to each picture in second subregion
Vegetarian refreshments carries out gradient projection in each predetermined angle, determines variance of second subregion in each predetermined angle gradient projection;
Judge whether second subregion is respectively less than default variance threshold values in the variance of each predetermined angle gradient projection;If not,
Determine that there are LD defects for silicon chip position corresponding with second subregion.
Described device further includes:
Logging modle 44, for recording the coordinate there are the subregion of LD defects in the silicon chip image.
The division determining module 41, half specifically for identifying the corresponding image-region of silicon chip in the silicon chip image
Footpath, according to default radius factor and the radius of the corresponding image-region of the silicon chip, determines the corresponding central area of silicon chip
Radius;According to the radius of the corresponding central area of the silicon chip, the corresponding center of silicon chip in the corresponding image-region of silicon chip is removed
Region, determines the corresponding object region of silicon chip in silicon chip image;The corresponding object region of the silicon chip is divided into
At least two first subregions.
The invention discloses a kind of silicon chip LD defect inspection methods and device, the described method includes:By silicon in silicon chip image
The corresponding image-region of piece is divided at least two first subregions, determines the corresponding gradient mean value of each first subregion;Pin
To each first subregion, judge whether the corresponding gradient mean value of the first subregion is more than default Grads threshold;If so,
Determine that there are LD defects for silicon chip position corresponding with first subregion.Due in embodiments of the present invention, by silicon chip image
The corresponding image-region of silicon chip is divided at least two first subregions, is according to the corresponding gradient mean value of each first subregion
It is no to be more than default Grads threshold, determine that silicon chip position corresponding with each first subregion whether there is LD defects, without right
The corresponding image-region of silicon chip strengthens into row threshold division and contrast in silicon chip image, avoids the dry of silicon chip background texture
Disturb, improve the accuracy of detection of silicon chip LD defects.
For systems/devices embodiment, since it is substantially similar to embodiment of the method, so the comparison of description is simple
Single, the relevent part can refer to the partial explaination of embodiments of method.
It should be understood by those skilled in the art that, embodiments herein can be provided as method, system or computer program
Product.Therefore, the application can use the reality in terms of complete hardware embodiment, complete software embodiment or combination software and hardware
Apply the form of example.Moreover, the application can use the computer for wherein including computer usable program code in one or more
The computer program production that usable storage medium is implemented on (including but not limited to magnetic disk storage, CD-ROM, optical memory etc.)
The form of product.
The application is with reference to the flow according to the method for the embodiment of the present application, equipment (system) and computer program product
Figure and/or block diagram describe.It should be understood that it can be realized by computer program instructions every first-class in flowchart and/or the block diagram
The combination of flow and/or square frame in journey and/or square frame and flowchart and/or the block diagram.These computer programs can be provided
The processors of all-purpose computer, special purpose computer, Embedded Processor or other programmable data processing devices is instructed to produce
A raw machine so that the instruction performed by computer or the processor of other programmable data processing devices, which produces, to be used in fact
The device for the function of being specified in present one flow of flow chart or one square frame of multiple flows and/or block diagram or multiple square frames.
These computer program instructions, which may also be stored in, can guide computer or other programmable data processing devices with spy
Determine in the computer-readable memory that mode works so that the instruction being stored in the computer-readable memory, which produces, to be included referring to
Make the manufacture of device, the command device realize in one flow of flow chart or multiple flows and/or one square frame of block diagram or
The function of being specified in multiple square frames.
These computer program instructions can be also loaded into computer or other programmable data processing devices so that counted
Series of operation steps is performed on calculation machine or other programmable devices to produce computer implemented processing, thus in computer or
The instruction performed on other programmable devices is provided and is used for realization in one flow of flow chart or multiple flows and/or block diagram one
The step of function of being specified in a square frame or multiple square frames.
Although having been described for the preferred embodiment of the application, those skilled in the art once know basic creation
Property concept, then can make these embodiments other change and modification.So appended claims be intended to be construed to include it is excellent
Select embodiment and fall into all change and modification of the application scope.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
God and scope.In this way, if these modifications and changes of the present invention belongs to the scope of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to comprising including these modification and variations.
Claims (10)
- A kind of 1. silicon chip turning stria LD defect inspection methods, it is characterised in that the described method includes:The corresponding image-region of silicon chip in silicon chip image is divided at least two first subregions, determines each first subregion Corresponding gradient mean value;For each first subregion, judge whether the corresponding gradient mean value of the first subregion is more than default Grads threshold; If so, determine that there are LD defects for silicon chip position corresponding with first subregion.
- 2. the method as described in claim 1, it is characterised in that described to determine the corresponding gradient mean value bag of each first subregion Include:For each pixel in each first subregion, according to the pixel in the X direction of the silicon chip image The sum of the second Grad in first gradient value and y direction, determines the Grad of the pixel;For each first subregion, according to the average value of the Grad of each pixel in first subregion, determine this The corresponding gradient mean value of one subregion.
- 3. the method as described in claim 1, it is characterised in that be not more than default gradient if there is corresponding gradient mean value First subregion of threshold value, further includes using first subregion as the second subregion, the method:For each second subregion, gradient throwing is carried out in each predetermined angle to each pixel in second subregion Shadow, determines variance of second subregion in each predetermined angle gradient projection;Judge second subregion in each preset angle Whether the variance for spending gradient projection is respectively less than default variance threshold values;If not, determine that silicon chip is corresponding with second subregion There are LD defects for position.
- 4. the method as described in claim 1 or 3, it is characterised in that the method further includes:Record the coordinate in the silicon chip image there are the subregion of LD defects.
- 5. the method as described in claim 1, it is characterised in that described to divide the corresponding image-region of silicon chip in silicon chip image Before at least two first subregions, the method further includes:The radius of the corresponding image-region of silicon chip in the silicon chip image is identified, according to default radius factor and the silicon chip pair The radius for the image-region answered, determines the radius of the corresponding central area of silicon chip;According to the radius of the corresponding central area of the silicon chip, the corresponding center of silicon chip in the corresponding image-region of silicon chip is removed Domain, determines the corresponding object region of silicon chip in silicon chip image;It is described the corresponding image-region of silicon chip in silicon chip image is divided at least two first subregions to include:The corresponding object region of the silicon chip is divided at least two first subregions.
- 6. a kind of silicon chip turning stria LD defect detecting devices, it is characterised in that described device includes:Determining module is divided, for the corresponding image-region of silicon chip in silicon chip image to be divided at least two first subregions, Determine the corresponding gradient mean value of each first subregion;First determining module, for for each first subregion, judging whether the corresponding gradient mean value of the first subregion is big In default Grads threshold;If so, determine that there are LD defects for silicon chip position corresponding with first subregion.
- 7. device as claimed in claim 6, it is characterised in that the division determining module, specifically for for each first Each pixel in subregion, according to first gradient value and the longitudinal axis of the pixel in the X direction of the silicon chip image The sum of the second Grad on direction, determines the Grad of the pixel;For each first subregion, according to first sub-district The average value of the Grad of each pixel in domain, determines the corresponding gradient mean value of the first subregion.
- 8. device as claimed in claim 6, it is characterised in that described device further includes:Second determining module, for being not more than the first subregion of default Grads threshold if there is corresponding gradient mean value, Using first subregion as the second subregion, for each second subregion, to each pixel in second subregion Gradient projection is carried out in each predetermined angle, determines variance of second subregion in each predetermined angle gradient projection;Judge Whether second subregion is respectively less than default variance threshold values in the variance of each predetermined angle gradient projection;If not, determine There are LD defects for silicon chip position corresponding with second subregion.
- 9. the device as described in claim 6 or 8, it is characterised in that described device further includes:Logging modle, for recording the coordinate there are the subregion of LD defects in the silicon chip image.
- 10. device as claimed in claim 6, it is characterised in that the division determining module, specifically for identifying the silicon chip The radius of the corresponding image-region of silicon chip in image, according to the half of default radius factor and the corresponding image-region of the silicon chip Footpath, determines the radius of the corresponding central area of silicon chip;According to the radius of the corresponding central area of the silicon chip, remove silicon chip and correspond to Image-region in the corresponding central area of silicon chip, determine the corresponding object region of silicon chip in silicon chip image;By the silicon The corresponding object region of piece is divided at least two first subregions.
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