CN108011026B - Packaging process for high-power LED double-layer hemispherical structure - Google Patents
Packaging process for high-power LED double-layer hemispherical structure Download PDFInfo
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- CN108011026B CN108011026B CN201711217337.8A CN201711217337A CN108011026B CN 108011026 B CN108011026 B CN 108011026B CN 201711217337 A CN201711217337 A CN 201711217337A CN 108011026 B CN108011026 B CN 108011026B
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- 238000012858 packaging process Methods 0.000 title claims abstract description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 71
- 239000000741 silica gel Substances 0.000 claims abstract description 71
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 71
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- 230000017525 heat dissipation Effects 0.000 claims abstract description 40
- 238000004806 packaging method and process Methods 0.000 claims abstract description 39
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- 241000217776 Holocentridae Species 0.000 claims abstract description 13
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention relates to a packaging process of a high-power LED double-layer hemispherical structure, which comprises the following steps: a. preparing a packaging heat dissipation substrate, and welding an LED lamp wick on the packaging heat dissipation substrate; b. coating first lens silica gel on the packaging heat dissipation substrate to form a plurality of first hemispherical lenses, wherein the first hemispherical lenses are of hemispherical convex structures; c. coating a first silica gel layer on the upper part of the first hemispherical lens; d. coating second lens silica gel on the first silica gel layer to form a plurality of second hemispherical lenses, wherein the second hemispherical lenses are of hemispherical convex structures; e. coating a second silica gel layer on the upper part of the second hemispherical lens; at least one of the second hemispherical lens and the second silica gel layer is provided with fluorescent powder, and the LED lamp wick is an ultraviolet lamp wick. The packaging process of the high-power LED double-layer hemispherical structure does not need secondary shaping, and has simple process and low cost.
Description
Technical Field
The invention belongs to the field of semiconductor packaging, and particularly relates to a packaging process of a high-power LED double-layer hemispherical structure.
Background
A Light-Emitting Diode (LED) is a semiconductor electronic component that can convert electrical energy into optical energy. With the continuous development of the industry and the leap-through of the technology, the application is greatly popularized, and the luminous efficiency of the LED is also continuously improved. The improvement of control software also makes the LED illumination more convenient to use. These gradual changes all reflect the broad prospects of LED LEDs in lighting applications. The LED lamp has the characteristics of energy conservation, environmental protection, safety, long service life, low power consumption, low heat, high brightness, water resistance, micro size, shock resistance, easiness in dimming, light beam concentration, simplicity and convenience in maintenance and the like, and can be widely applied to the fields of various indications, display, decoration, backlight sources, common illumination and the like.
However, the prior art has the following drawbacks:
1. because the light emitted by the LED light source is generally distributed in a divergent mode, namely Lambert distribution, the illumination brightness of the light source is not concentrated enough, the conventional silica gel lens generally needs to be shaped secondarily through an external lens so as to adapt to the illumination requirement of a specific occasion, the process is complex, and the production cost is increased.
2. In the existing high-power LED package, fluorescent powder is generally directly coated on the surface of a chip. This direct coating will reduce the light extraction efficiency of the package, since the chip absorbs the backscattered light. In addition, the fluorescent powder is directly coated on the chip, and the quantum efficiency of the fluorescent powder is obviously reduced due to the high temperature generated by the chip, so that the luminous efficiency of the package is seriously influenced.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides the high-power LED double-layer hemispherical structure packaging process which can improve the light extraction efficiency and the lumen efficiency, has a simple process and saves cost.
In order to achieve the purpose of the invention, the invention adopts the technical scheme that:
a packaging process of a high-power LED double-layer hemispherical structure comprises the following steps:
a. preparing a packaging heat dissipation substrate, and welding an LED lamp wick on the packaging heat dissipation substrate;
b. coating first lens silica gel on the packaging heat dissipation substrate to form a plurality of first hemispherical lenses, wherein the first hemispherical lenses are of hemispherical convex structures;
c. coating a first silica gel layer on the upper part of the first hemispherical lens;
d. coating second lens silica gel on the first silica gel layer to form a plurality of second hemispherical lenses, wherein the second hemispherical lenses are of hemispherical convex structures;
e. coating a second silica gel layer on the upper part of the second hemispherical lens;
at least one of the second hemispherical lens and the second silica gel layer is provided with fluorescent powder, and the LED lamp wick is an ultraviolet lamp wick.
Further, the step a specifically includes:
a1, selecting an original heat dissipation substrate;
a2, forming a plurality of groove bodies with preset intervals on one plane of the original radiating substrate along the width direction to obtain the packaging radiating substrate;
the groove body is a semi-cylindrical shape, the groove body is an inclined groove body, and the depth of one end of the groove body is larger than that of the other end of the groove body.
Further, the step b specifically includes:
b1, coating first lens silica gel on the packaging heat dissipation substrate;
b2, covering a first hemispherical mould on the first lens silica gel to form a first hemispherical lens;
b3, baking the packaging heat dissipation substrate and the first hemispherical lens at a first preset temperature for a first preset time;
b4, removing the first hemispherical mould.
Further, the step d specifically includes:
d1, coating a second lens silica gel on the first silica gel layer;
d2, covering the first hemispherical mould on the second lens silica gel to form a second hemispherical lens;
d3, baking the second hemispherical lens at the first preset temperature for the first preset time;
d4, removing the first hemispherical mould.
Further, the first preset temperature is 90-125 ℃, and the first preset time is 15-60 min.
Further, the step e specifically includes:
e1, forming a hemispherical convex structure on the second silica gel layer by using a second hemispherical mold;
e2, baking the hemispherical convex structure at a second preset temperature for a second preset time;
e3, removing the second hemispherical mould.
Further, the second preset temperature is 100-150 ℃, and the second preset time is 4-12 h.
Further, the refractive index of the first silica gel layer is smaller than that of the second silica gel layer; and the refractive index of the first hemispherical lens is greater than that of the first silica gel layer, and the refractive index of the second hemispherical lens is greater than that of the second silica gel layer.
Further, the first hemispherical lens and the second hemispherical lens form a regular array on the package heat dissipation substrate and the first silica gel layer respectively.
Furthermore, the packaging heat dissipation substrate is a copper plate.
The invention has the beneficial effects that:
1. the high-power LED packaging structure adopts two hemispherical lenses and a two-layer packaging structure, the LED light source has better convergence by multiple refractions, the technical problem of insufficient concentration of the illumination brightness of the light source is solved, secondary shaping is not needed, the process is simple, and the cost is low.
2. The fluorescent powder is separated from the LED chip by the high-power LED double-layer hemispherical structure packaging process, so that the problem of quantum efficiency reduction of the fluorescent powder caused by high temperature is solved.
3. By adopting the process of the invention, the silica gel with different refractive indexes is adopted, and the lens is formed in the silica gel, so that the problem of light emission dispersion of the LED chip is solved, and the light emitted by the light source can be more concentrated.
Drawings
Fig. 1 is a flow chart of a packaging process of a high-power LED double-layer hemispherical structure according to an embodiment of the present invention;
FIG. 2 is a schematic view of an LED wick structure provided in an embodiment of the invention;
fig. 3 is a schematic structural diagram of an LED chip according to an embodiment of the present invention;
fig. 4 is a schematic diagram of a high-power LED dual-layer hemispherical package structure according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a rectangular array of hemispherical lenses according to an embodiment of the present invention;
FIG. 6 is a schematic diagram of a hemispherical lens rhombus array according to an embodiment of the invention.
Detailed Description
The present invention will be described in further detail with reference to specific embodiments. It should be understood that the scope of the above-described subject matter is not limited to the following examples, and any techniques implemented based on the disclosure of the present invention are within the scope of the present invention.
Example one
Fig. 1 is a flow chart of a packaging process of a high-power LED double-layer hemispherical structure according to an embodiment of the present invention, which includes the following steps:
a. preparing a packaging heat dissipation substrate, and welding an LED lamp wick on the packaging heat dissipation substrate;
b. coating first lens silica gel on the packaging heat dissipation substrate to form a plurality of first hemispherical lenses, wherein the first hemispherical lenses are of hemispherical convex structures;
c. coating a first silica gel layer on the upper part of the first hemispherical lens;
d. coating second lens silica gel on the first silica gel layer to form a plurality of second hemispherical lenses, wherein the second hemispherical lenses are of hemispherical convex structures;
e. coating a second silica gel layer on the upper part of the second hemispherical lens;
at least one of the second hemispherical lens and the second silica gel layer is provided with fluorescent powder, and the LED lamp wick is an ultraviolet lamp wick.
In order to perform packaging, the heat dissipation substrate must be kept clean, and stains, especially oil stains, on the heat dissipation substrate need to be cleaned and dried, so that the heat dissipation substrate is kept dry. Therefore, the heat dissipation substrate needs to be cleaned and baked before formal packaging. After the heat dissipation substrate is cleaned and baked, the lead of the chip is welded, the welding adopts a standard reflow soldering process, and the method mainly comprises the following steps: printing solder, die bonding inspection and reflow soldering. And finally, detecting and packaging the prepared LED.
The LED lamp wick of this embodiment is an AlGaN-based deep ultraviolet LED structure, and according to specific LED lamp index requirements, the contents of red, green and blue fluorescent powders are configured, and the red, green and blue fluorescent powders are added on the second silica gel layer to make the light be in different colors. The specific structure can be seen in fig. 2.
Specifically, LED wick structure from the bottom up includes in proper order: the solar cell comprises a sapphire substrate layer, an N-type AlGaN layer, a multi-quantum well layer, a P-type AlGaN layer, a P-type GaN layer and a P electrode, wherein a cathode electrode is further arranged on the surface of the N-type AlGaN layer. Detailed structural diagram see fig. 3.
The first silica gel layer directly contacts the LED on the packaging heat dissipation substrate. The diameter of the hemispherical lens is 10-200 μm, the distance between adjacent hemispherical lenses is 10-200 μm, and the adoption of the size can ensure that the light sources are concentrated as much as possible under the condition of a certain area of the heat dissipation substrate, thereby improving the utilization rate of the light sources.
The high-power LED packaging structure adopts two hemispherical lenses and a two-layer packaging structure, the LED light source has better convergence by multiple refractions, the technical problem of insufficient concentration of the illumination brightness of the light source is solved, secondary shaping is not needed, the process is simple, and the cost is low. The fluorescent powder is separated from the LED chip by the high-power LED double-layer hemispherical structure packaging process, so that the problem of quantum efficiency reduction of the fluorescent powder caused by high temperature is solved.
In a specific embodiment, the step a specifically includes:
a1, selecting an original heat dissipation substrate;
a2, forming a plurality of groove bodies with preset intervals on one plane of the original radiating substrate along the width direction to obtain the packaging radiating substrate;
the groove body is a semi-cylindrical shape, the groove body is an inclined groove body, and the depth of one end of the groove body is larger than that of the other end of the groove body.
Because the safe junction temperature of the LED chip during working is within 110 ℃, if the junction temperature is too high, a series of problems such as light intensity reduction, spectrum deviation, color temperature rise, thermal stress increase, accelerated chip aging and the like can be caused, the service life of the LED is greatly reduced, and meanwhile, the accelerated aging of a silica gel layer packaged on the chip can be caused to influence the light transmission efficiency of the LED. Because only part of the energy in the input power of the LED is converted into light energy, and the other energy is converted into heat energy, for the LED chip with larger power, in order to improve the heat dissipation effect, the packaging heat dissipation substrate with the groove structure can be obtained after the packaging heat dissipation substrate is processed. The groove body is a channel for air circulation, and the heat convection of air is utilized, so that the heat dissipation effect is improved. The packaging radiating substrate can be an iron radiating substrate or a copper radiating substrate, as long as the heat capacity is large and the deformation is not easy to occur, the contact between the packaging radiating substrate and the bottom surface of the radiating fin is ensured to be tight, and the radiating effect is good. The thickness of the heat dissipation substrate is 0.5mm-10 mm. The diameter of the groove body is 0.3mm-2 mm. Preferably, the diameter of the groove body is 0.5mm, the depth of one end of the groove body is 0.5mm, the depth of the other end of the groove body is 1mm, and under the size, the size of the air channel can be increased as much as possible under the condition that the strength of the heat dissipation base plate is not changed.
In a specific embodiment, the step b specifically includes:
b1, coating first lens silica gel on the packaging heat dissipation substrate;
b2, covering a first hemispherical mould on the first lens silica gel to form a first hemispherical lens;
b3, baking the packaging heat dissipation substrate and the first hemispherical lens at a first preset temperature for a first preset time;
b4, removing the first hemispherical mould.
In a specific embodiment, the step d specifically includes:
d1, coating a second lens silica gel on the first silica gel layer;
d2, covering the first hemispherical mould on the second lens silica gel to form a second hemispherical lens;
d3, baking the second hemispherical lens at the first preset temperature for the first preset time;
d4, removing the first hemispherical mould.
In one embodiment, the first predetermined temperature is 90 ℃ to 125 ℃ and the first predetermined time is 15min to 60 min.
In a specific embodiment, the step e specifically includes:
e1, forming a hemispherical convex structure on the second silica gel layer by using a second hemispherical mold;
e2, baking the hemispherical convex structure at a second preset temperature for a second preset time;
e3, removing the second hemispherical mould.
In one embodiment, the second predetermined temperature is from 100 ℃ to 150 ℃ and the second predetermined time is from 4h to 12 h.
Referring to fig. 4, fig. 4 is a schematic view of a high power LED dual-layer hemispherical package structure according to an embodiment of the present invention, and the package structure shown in fig. 3 is finally formed, wherein a first hemispherical lens 22 is disposed on a package heat dissipation substrate 21, a first silicone layer 23 is disposed on an upper portion of the first silicone layer 23, a second hemispherical lens 24 is disposed on the first silicone layer 23, a second silicone layer 25 is disposed on an upper portion of the second hemispherical lens 24, and the second hemispherical lens is an outermost layer, which is a hemispherical structure. The second silica gel layer directly influences the light emitting efficiency of the LED lamp, and generally has three forms of a flat shape, a hemispherical shape and a paraboloid shape, wherein the hemispherical light emitting angle is the largest, so that the LED lamp is suitable for common lighting application; the parabolic light-exit angle is minimal and suitable for local lighting applications; and a flat shape between the two, suitable for indicating illumination.
In a specific embodiment, the refractive index of the first silicone gel layer is less than the refractive index of the second silicone gel layer; and the refractive index of the first hemispherical lens is greater than that of the first silica gel layer, and the refractive index of the second hemispherical lens is greater than that of the second silica gel layer.
According to the process, the silica gel with different refractive indexes is adopted, and the lens is formed in the silica gel, so that the problem of light emission dispersion of the LED chip is solved, light emitted by the light source can be more concentrated, and the utilization rate of the light source is improved. In this embodiment, the refractive index of the second silica gel layer is 1.4-1.6. For example, methyl (1.41 refractive index) silicone rubber, phenyl high refractive (1.54 optical refractive index) silicone rubber can be selected.
The refractive index of the silica gel layer is increased from bottom to top in order to inhibit total reflection, and the total reflection causes less emergent light, so that the light totally reflected to the inside is absorbed and becomes useless heat. And the refractive index of the outermost layer is not too large, because the refractive index of the outermost layer of silica gel is too large, the difference of the hit refractive index between the outer layer and the air is formed, the total reflection effect is serious, and the light transmission is not facilitated.
Generally, the material of the hemispherical lens silica gel can be selected from polycarbonate, polymethyl methacrylate and glass; the packaging layer material can be selected from epoxy resin, modified epoxy resin, organic silicon material and the like, and when the epoxy resin material is adopted, the packaging layer material needs to be isolated from the chip to prevent oxidation. The refractive index of the material can be adjusted according to specific components so as to adapt to different application scenes.
For guaranteeing light from gathering together the state after lens outgoing, and can not disperse, the silica gel layer in the middle of just can play the effect of once more focusing in second layer lens within the twice focus, otherwise light has more dispersed on the contrary, the effect of focusing reduces. For simple focal length calculation, the refractive indexes of the upper and lower layers of silica gel of the lens are both n1, the refractive index of the lens is n2, R is the radius of the hemispherical lens, and x is the distance between the upper and lower layers of hemispherical lenses, so the focal length calculation formula is as follows:
hemispherical, plano-convex mirror:
the focal length f is R/(n2-n1), and x is more than or equal to 0 and less than or equal to 2R/(n2-n 1);
generally, the distance between the upper and lower hemispheres should be less than twice the focal length f, so the distance between the upper and lower hemispheric lenses of this embodiment is 0-2R/(n2-n1), and in specific implementations, the second silica gel layer may be thicker. The second silica gel layer directly influences the light emitting efficiency of the LED lamp, and generally has three forms of a flat shape, a hemispherical shape and a paraboloid shape, wherein the hemispherical light emitting angle is the largest, so that the LED lamp is suitable for common lighting application; the parabolic light-exit angle is minimal and suitable for local lighting applications; and a flat shape between the two, suitable for indicating illumination.
In one embodiment, the first and second hemispherical lenses form a regular array on the package heat sink substrate. In one embodiment, the first hemispherical lenses form a regular array on the package heat sink substrate. Specifically, a rectangular array, a diamond array, a triangular array, a circular array, etc., as shown in fig. 5 and 6,
finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (9)
1. A high-power LED double-layer hemispherical structure packaging process is characterized by comprising the following steps:
a. preparing a packaging heat dissipation substrate, welding an LED lamp wick on the packaging heat dissipation substrate, wherein a plurality of groove bodies with preset intervals are formed in one plane of the heat dissipation substrate along the width direction, the thickness of the substrate is 0.5-10 mm, the diameter of each groove body is 0.3-2 mm, the diameter of each groove body is 0.5mm, the depth of one end of each groove body is 0.5mm, and the depth of the other end of each groove body is 1 mm;
b. coating first lens silica gel on the packaging heat dissipation substrate to form a plurality of first hemispherical lenses, wherein the first hemispherical lenses are of hemispherical convex structures;
c. coating a first silica gel layer on the upper part of the first hemispherical lens;
d. coating second lens silica gel on the first silica gel layer to form a plurality of second hemispherical lenses, wherein the second hemispherical lenses are of hemispherical convex structures;
e. coating a second silica gel layer on the upper part of the second hemispherical lens;
at least one of the second hemispherical lens and the second silica gel layer is provided with fluorescent powder, and the LED lamp wick is an ultraviolet lamp wick;
wherein, the diameter of the hemispherical lens is 10 μm-200 μm, the distance between the adjacent hemispherical lenses is 10 μm-200 μm, the distance between the upper and lower hemispherical lenses is 0-2R/(n2-n1), wherein n1 is the refractive index of the silica gel layer, n2 is the refractive index of the lens, R is the radius of the hemispherical lens, and x is the distance between the upper and lower hemispherical lenses; the refractive index of the first silica gel layer is smaller than that of the second silica gel layer; and the refractive index of the first hemispherical lens is greater than that of the first silica gel layer, and the refractive index of the second hemispherical lens is greater than that of the second silica gel layer.
2. The packaging process of the high-power LED double-layer semispherical structure according to claim 1, characterized in that the step a specifically comprises:
a1, selecting an original heat dissipation substrate;
a2, forming a plurality of groove bodies with preset intervals on one plane of the original radiating substrate along the width direction to obtain the packaging radiating substrate;
the groove body is a semi-cylindrical shape, the groove body is an inclined groove body, and the depth of one end of the groove body is larger than that of the other end of the groove body.
3. The packaging process of the high-power LED double-layer semispherical structure according to claim 1, wherein the step b specifically comprises the following steps:
b1, coating first lens silica gel on the packaging heat dissipation substrate;
b2, covering a first hemispherical mould on the first lens silica gel to form a first hemispherical lens;
b3, baking the packaging heat dissipation substrate and the first hemispherical lens at a first preset temperature for a first preset time;
b4, removing the first hemispherical mould.
4. The packaging process of the high-power LED double-layer semispherical structure as recited in claim 3, wherein the step d specifically comprises the following steps:
d1, coating a second lens silica gel on the first silica gel layer;
d2, covering the first hemispherical mould on the second lens silica gel to form a second hemispherical lens;
d3, baking the second hemispherical lens at the first preset temperature for the first preset time;
d4, removing the first hemispherical mould.
5. The packaging process of the high-power LED double-layer hemispherical structure as claimed in claim 3 or 4, wherein the first predetermined temperature is 90-125 ℃, and the first predetermined time is 15-60 min.
6. The packaging process of the high-power LED double-layer semispherical structure as recited in claim 4, wherein the step e specifically comprises the following steps:
e1, forming a hemispherical convex structure on the second silica gel layer by using a second hemispherical mold;
e2, baking the hemispherical convex structure at a second preset temperature for a second preset time;
e3, removing the second hemispherical mould.
7. The packaging process of the high-power LED double-layer hemispherical structure as claimed in claim 6, wherein the second predetermined temperature is 100 ℃ to 150 ℃, and the second predetermined time is 4h to 12 h.
8. The packaging process of claim 1, wherein the first hemispherical lens and the second hemispherical lens form a regular array on the packaging heat dissipation substrate and the first silicone layer, respectively.
9. The packaging process of the high-power LED double-layer semispherical structure as recited in claim 1, wherein the packaging heat dissipation substrate is a copper plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711217337.8A CN108011026B (en) | 2017-11-28 | 2017-11-28 | Packaging process for high-power LED double-layer hemispherical structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711217337.8A CN108011026B (en) | 2017-11-28 | 2017-11-28 | Packaging process for high-power LED double-layer hemispherical structure |
Publications (2)
| Publication Number | Publication Date |
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| CN108011026A CN108011026A (en) | 2018-05-08 |
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| CN201796891U (en) * | 2010-09-27 | 2011-04-13 | 四川新力光源有限公司 | Radiating device for integrated LED |
| CN102185093A (en) * | 2011-04-08 | 2011-09-14 | 陕西科技大学 | Active cool type radiating substrate using air convection |
| CN204333035U (en) * | 2014-12-05 | 2015-05-13 | 常州瑞华电力电子器件有限公司 | A kind of novel high heat conduction composite aluminum substrate |
| TW201635598A (en) * | 2015-03-31 | 2016-10-01 | 點金石股份有限公司 | Illumination structure having multilayer lens and manufacturing method thereof |
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| CN201796891U (en) * | 2010-09-27 | 2011-04-13 | 四川新力光源有限公司 | Radiating device for integrated LED |
| CN102185093A (en) * | 2011-04-08 | 2011-09-14 | 陕西科技大学 | Active cool type radiating substrate using air convection |
| CN204333035U (en) * | 2014-12-05 | 2015-05-13 | 常州瑞华电力电子器件有限公司 | A kind of novel high heat conduction composite aluminum substrate |
| TW201635598A (en) * | 2015-03-31 | 2016-10-01 | 點金石股份有限公司 | Illumination structure having multilayer lens and manufacturing method thereof |
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