CN108011009A - A kind of high-power blue-ray LED double-decker packaging technology - Google Patents
A kind of high-power blue-ray LED double-decker packaging technology Download PDFInfo
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- CN108011009A CN108011009A CN201711214942.XA CN201711214942A CN108011009A CN 108011009 A CN108011009 A CN 108011009A CN 201711214942 A CN201711214942 A CN 201711214942A CN 108011009 A CN108011009 A CN 108011009A
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- packaging technology
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- 241001025261 Neoraja caerulea Species 0.000 title claims abstract description 20
- 238000012536 packaging technology Methods 0.000 title claims abstract description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 112
- 239000000741 silica gel Substances 0.000 claims abstract description 112
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 112
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 238000001816 cooling Methods 0.000 claims abstract description 26
- 239000000843 powder Substances 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 10
- 238000005538 encapsulation Methods 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 238000003780 insertion Methods 0.000 claims 2
- 230000037431 insertion Effects 0.000 claims 2
- 230000000149 penetrating effect Effects 0.000 claims 1
- 229960001866 silicon dioxide Drugs 0.000 description 78
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 230000032683 aging Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003064 anti-oxidating effect Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 235000012771 pancakes Nutrition 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000011079 streamline operation Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The present invention relates to a kind of high-power blue-ray LED double-decker packaging technology, comprise the following steps：A, package cooling substrate is prepared, LED lamp is welded on the package cooling substrate, the first layer of silica gel is coated on package cooling substrate；B, the first sphere lens are formed；C, first sphere lens are pressed in first layer of silica gel；D, the second layer of silica gel is coated on the first sphere lens top, the 3rd layer of silica gel is coated in second layer of silica gel；E, the second sphere lens are formed；F, first sphere lens are pressed in first layer of silica gel；G, the 4th layer of silica gel is coated on the second sphere lens top；Wherein, at least one layer of in second layer of silica gel, the 3rd layer of silica gel, the 4th layer of silica gel to have fluorescent powder, the LED lamp is ultraviolet wick.The high-power blue-ray LED double-decker packaging technology of the present invention, it is not necessary to carry out secondary reshaping, simple process and low cost.
Description
Technical field
The invention belongs to field of semiconductor package, and in particular to a kind of high-power blue-ray LED double-decker packaging technology.
Background technology
2014, Japanese Scientists red rugged brave, the day wild great and American day because inventing " high-brightness blue light emitting diode "
Scientist's descendants Shuji Nakamura obtains Nobel Prize in physics altogether.Blue LED is gallium nitride diode, light emitting diode by
Diode made of compound containing gallium (Ga), arsenic (As), phosphorus (P), nitrogen (N) etc., can give off when electronics is with hole-recombination
Visible ray, thus can be used for that light emitting diode is made.
However, there are following defect for the prior art：
1st, since the blue light that LED light source is sent generally is distributed in divergence expression, i.e. lambertian distribution, this causes light source brightness of illumination
Not enough concentrate, existing silica-gel lens are generally required carries out secondary reshaping by outer lens, is needed with adapting to the illumination of specific occasion
Ask, its complex process, and add production cost.
2nd, in existing high-power LED encapsulation, fluorescent powder is usually to be applied directly on chip surface.Due to chip pair
In back scattering light there are absorption, therefore, this mode directly coated will reduce the efficiency of light extraction of encapsulation.Separately
Outside, fluorescent powder is applied directly on chip, the high temperature that chip produces can be remarkably decreased the quantum efficiency of fluorescent powder, so that sternly
The luminous efficiency of encapsulation is influenced again.
The content of the invention
In order to solve the above-mentioned problems in the prior art, the present invention provides one kind can improve efficiency of light extraction, stream
Obvious results rate, technique is simple, saves the high-power blue-ray LED double-decker packaging technology of expense.
In order to realize foregoing invention purpose, the technical solution adopted by the present invention is：
A kind of high-power blue-ray LED double-decker packaging technology, comprises the following steps：
A, package cooling substrate is prepared, LED lamp is welded on the package cooling substrate, on package cooling substrate
Coat the first layer of silica gel；
B, two the first hemispherical groove moulds are reversely fastened, the first spherical die is formed, in first spherical mold
The first lens of embedding silica gel in tool, forms the first sphere lens；
C, first sphere lens are pressed in first layer of silica gel, are embedded in the first sphere lens half
In first layer of silica gel；
D, the second layer of silica gel is coated on the first sphere lens top, the 3rd silica gel is coated in second layer of silica gel
Layer；
E, two the second hemispherical groove moulds are reversely fastened, the second spherical die is formed, in second spherical mold
The second lens of embedding silica gel in tool, forms the second sphere lens；
F, second sphere lens are pressed in the 3rd layer of silica gel, are embedded in the second sphere lens half
In 3rd layer of silica gel；
G, the 4th layer of silica gel is coated on the second sphere lens top；
Wherein, it is at least one layer of in second layer of silica gel, the 3rd layer of silica gel, the 4th layer of silica gel that there is fluorescence
Powder, the LED lamp are ultraviolet wick.
Further, the step c is specifically included：
A first hemispherical groove mould on c1, removal first spherical die, the ball that no mould is coated
Shape lens component is placed in first layer of silica gel；
Another the first hemispherical groove mould on c2, removal first spherical die；
C3, be baked for first scheduled time to the package cooling substrate under the first predetermined temperature.
Further, first predetermined temperature is 90 DEG C -125 DEG C, and first scheduled time is 15min-60min.
Further, the step f is specifically included：
A second hemispherical groove mould on f1, removal second spherical die, the ball that no mould is coated
Shape lens component is placed in the 3rd layer of silica gel；
Another the second hemispherical groove mould on f2, removal second spherical die；
F3, be baked for second scheduled time to the package cooling substrate under the second predetermined temperature.
Further, second predetermined temperature is 100 DEG C -150 DEG C, and second scheduled time is 4h-12h.
Further, the first layer of silica gel refractive index, the second layer of silica gel refractive index, the 3rd layer of silica gel refraction
Rate, the 4th layer of silica gel refractive index are sequentially increased, and the first sphere lens refractive index is rolled over more than second layer of silica gel
Rate is penetrated, the second sphere lens refractive index is more than the 4th layer of silica gel refractive index.
Further, first sphere lens, the second sphere lens formation rule on the package cooling substrate
Array.
Further, second layer of silica gel, the 3rd layer of silica gel, the 4th layer of silica gel, described first spherical
One or more layers in mirror, second sphere lens is with fluorescent powder.
Further, the heat-radiating substrate is aluminum substrate.
Further, the aluminium base plate thickness is 0.5mm-10mm.
The beneficial effects of the invention are as follows：
1st, high-power blue-ray LED encapsulating structure of the invention is using two sphere lens, multilayer encapsulation structure, repeatedly refraction
Make LED light source convergence more preferable, solve the technical problem that light source brightness of illumination is not enough concentrated, it is not necessary to secondary reshaping is carried out,
Simple process and low cost.
2nd, high-power blue-ray LED double-decker packaging technology fluorescent powder of the invention is separated with LED chip, solves high temperature
The problem of quantum efficiency of caused fluorescent powder declines.
3rd, technique using the present invention uses the silica gel of different refractivity, and lens are formed in silica gel, solves LED core
Piece shines the problem of scattered so that the light that light source is sent can be concentrated more.
Brief description of the drawings
Fig. 1 is a kind of high-power blue-ray LED double-decker packaging technology flow figure provided in an embodiment of the present invention；
Fig. 2 is LED lamp structure diagram provided in an embodiment of the present invention；
Fig. 3 is LED chip structure schematic diagram provided in an embodiment of the present invention；
Fig. 4 is lens packages structure diagram provided in an embodiment of the present invention；
Fig. 5 is sphere lens rectangular array schematic diagram provided in an embodiment of the present invention；
Fig. 6 lists intention for sphere lens diamond array provided in an embodiment of the present invention.
Embodiment
With reference to embodiment, the present invention is described in further detail.But this should not be interpreted as to the present invention
The scope of above-mentioned theme is only limitted to following embodiment, all models that the present invention is belonged to based on the technology that present invention is realized
Enclose.
Embodiment one
Fig. 1 is a kind of high-power blue-ray LED double-decker packaging technology flow figure provided in an embodiment of the present invention, including with
Lower step：
A, package cooling substrate is prepared, LED lamp is welded on the package cooling substrate, on package cooling substrate
Coat the first layer of silica gel；
B, two the first hemispherical groove moulds are reversely fastened, the first spherical die is formed, in first spherical mold
The first lens of embedding silica gel in tool, forms the first sphere lens；
C, first sphere lens are pressed in first layer of silica gel, are embedded in the first sphere lens half
In first layer of silica gel；
D, the second layer of silica gel is coated on the first sphere lens top, the 3rd silica gel is coated in second layer of silica gel
Layer；
E, two the second hemispherical groove moulds are reversely fastened, the second spherical die is formed, in second spherical mold
The second lens of embedding silica gel in tool, forms the second sphere lens；
F, second sphere lens are pressed in the 3rd layer of silica gel, are embedded in the second sphere lens half
In 3rd layer of silica gel；
G, the 4th layer of silica gel is coated on the second sphere lens top；
Wherein, it is at least one layer of in second layer of silica gel, the 3rd layer of silica gel, the 4th layer of silica gel that there is fluorescence
Powder, the LED lamp are ultraviolet wick.
In order to be packaged, heat-radiating substrate must keep cleaning, it is necessary to spot above, especially oil stain be cleaned dry
Only, and dried, keep the drying of heat-radiating substrate.Therefore need to clean heat-radiating substrate and dried before formal encapsulation
It is roasting.After heat-radiating substrate cleans baking completion, the lead of chip to be welded, welding uses the reflow soldering process of standard,
It is mainly included the following steps that：Printing solder, die bond are examined, reflow soldering.Finally the LED after the completion of preparation is detected and
Packaging.
The LED lamp of the present embodiment is blue light LED structure, according to specific LED lamp index request, configures yellow fluorescent powder
Content, and by yellow fluorescent powder add in the second layer of silica gel, the 3rd layer of silica gel, the 4th layer of silica gel, the first sphere lens, second
One or more layers in sphere lens, blue light make the color that light is in the different depths through the yellow fluorescent powder of different content.Its
Concrete structure can be referring to Fig. 2.
Specifically, Fig. 3 is LED chip structure schematic diagram provided in an embodiment of the present invention, LED light cored structure from top to bottom according to
It is secondary including：Sapphire Substrate layer 11, N-type AlGaN layer 12, multiple quantum well layer 13, p-type AlGaN layer 14, p-type GaN layer 15, P electricity
Pole 16,12 surface of N-type AlGaN layer are additionally provided with cathode electrode 17.
First layer of silica gel directly contacts the LED on package cooling substrate.A diameter of 10 shape lens of sphere lens
A diameter of to connect, the spacing of adjacent sphere lens can ensure radiating between 10 adjacent sphere lens using above-mentioned size
Concentration light source as much as possible in the case that substrate area is certain, improves light source utilization rate.
The high-power blue-ray LED double-decker packaging technology of the embodiment of the present invention uses sphere lens, solves light source photograph
The technical problem that lightness is not enough concentrated, it is not necessary to carry out secondary reshaping, technique is simple, reduces cost.In addition, compare existing skill
Art need not smear fluorescent powder on chip, by fluorescent powder addition in other layer of silica gel, fluorescent powder is separated with LED chip,
The quantum efficiency for solving the problems, such as fluorescent powder caused by high temperature declines.
Since the safe junction temperature of LED chip work should can cause light intensity to reduce, light within 110 DEG C, if junction temperature is excessive
A series of problems, such as spectral migration, colour temperature raise, thermal stress increases, chip accelerated ageing, greatly reduces the service life of LED,
Simultaneously it is also possible to cause the layer of silica gel accelerated ageing encapsulated on chip, its light transmission efficiency is influenced.Due in LED input powers
The energy of some is converted into luminous energy, other then be converted into thermal energy, scattered in order to improve for the LED chip that power is larger
Thermal effect, obtains the basic internal encapsulation with multiple through holes being arranged in parallel after can also handling package cooling substrate
Heat-radiating substrate.The through hole is the passage of air circulation, using the thermal convection current of air, adds heat dissipation effect.The package cooling base
Plate can be iron heat-radiating substrate or copper heat-radiating substrate, as long as thermal capacitance is big, it is yielding not allow, ensure that it connects with heat sink bottom surface
Touch close, good heat dissipation effect.Heat-radiating substrate thickness is 0.5mm-10mm.A diameter of 0.3mm-2mm of through hole.Preferably, through hole
A diameter of 0.5mm, under the size, can reach in the case where not changing heat-radiating substrate intensity, increase wind as big as possible
The size in road.
In a detailed embodiment, the step c is specifically included：
A first hemispherical groove mould on c1, removal first spherical die, the ball that no mould is coated
Shape lens component is placed in first layer of silica gel；
Another the first hemispherical groove mould on c2, removal first spherical die；
C3, be baked for first scheduled time to the package cooling substrate under the first predetermined temperature.
In a detailed embodiment, first predetermined temperature is 90 DEG C -125 DEG C, and first scheduled time is
15min-60min。
In a detailed embodiment, the step f is specifically included：
A second hemispherical groove mould on f1, removal second spherical die, the ball that no mould is coated
Shape lens component is placed in the 3rd layer of silica gel；
Another the second hemispherical groove mould on f2, removal second spherical die；
F3, be baked for second scheduled time to the package cooling substrate under the second predetermined temperature.
In a detailed embodiment, second predetermined temperature is 100 DEG C -150 DEG C, and second scheduled time is
4h-12h。
In a detailed embodiment, first sphere lens, the second sphere lens are in the package cooling substrate
The array of upper formation rule.
Encapsulating structure schematic diagram as shown in Figure 4 is ultimately formed, is wherein the first layer of silica gel 22 on chip cooling substrate 21,
The first sphere lens 23 are coated between first layer of silica gel 22 and the second layer of silica gel 24, the top of the second layer of silica gel 24 also has the 3rd silicon
Glue-line 25, coats the second sphere lens 26 between the 3rd layer of silica gel 25 and the 4th layer of silica gel 27, said structure make it that first is spherical
23 half of lens is embedded in the first layer of silica gel 22, and another part is wrapped up by the second layer of silica gel 24,26 half of the second sphere lens
It is embedded in the 3rd layer of silica gel 25, another part is wrapped up by the 4th layer of silica gel 27.
In a detailed embodiment, the first layer of silica gel refractive index, the second layer of silica gel refractive index, described
Three layer of silica gel refractive index, the 4th layer of silica gel refractive index are sequentially increased, and the first sphere lens refractive index is more than described
Second layer of silica gel refractive index, the second sphere lens refractive index are more than the 4th layer of silica gel refractive index.In specific implementation,
For streamline operation, the second layer of silica gel and the 3rd layer of silica gel can be arranged to identical material, to reduce primary coating
Flow, technique of the invention use the silica gel of different refractivity, and lens are formed in silica gel, solve LED chip and shine point
The problem of dissipating so that the light that light source is sent can be concentrated more, improve light source utilization rate.In the present embodiment, the 4th layer of silica gel
Refractive index is 1.4-1.6.Such as the high folding (1.54 optical index) of methyl (1.41 index of refraction) silicon rubber, phenyl can be selected organic
Silicon rubber.
It is in order to suppress to be totally reflected, because total reflection can cause emergent light to become that layer of silica gel refractive index is sequentially increased from bottom to top
Few, useless heat can be absorbed into by being totally reflected to the light of inside.And outermost refractive index is not too big, because outermost
The refractive index of the one layer of silica gel in face is too big, will between outer layer and air the dozens of refringences of shape, total reflection effect is serious, no
Beneficial to printing opacity.
Generally, polycarbonate, polymethyl methacrylate, glass may be selected in the material of sphere lens silica gel；Four layers of envelope
Dress layer material can select epoxy resin, modified epoxy, organosilicon material etc., when using epoxy resin material, need
To isolate with chip, with anti-oxidation.The refractive index of above-mentioned material can be adjusted according to specific component, to adapt to different answer
Use scene.
In order to ensure light after lens outgoing to gather state, without dissipating, middle layer of silica gel two focus length with
It is interior, it could play the role of focusing on again in second layer lens, otherwise light dissipates all the better, the effect drop of focusing
It is low.In order to which focal length calculates simply, if it is n1 that two layers of silica gel refractive index up and down of lens is similar, the refractive index of lens is n2, and R is
The radius of sphere lens, x are the distance between upper and lower two layers of sphere lens, then focal length calculation formula is as follows：
It is spherical, convexo-convex mirror：
Focal length f=R/ [2 (n2-n1)], then 0≤x≤R/ (n2-n1)；
General the distance between two layers of balls up and down should be less than less than twice of focal length f, therefore two layers up and down of the present embodiment
The distance between sphere lens are 0-R/ (n2-n1), and in specific implementation, the 4th layer of silica gel can thicker point.4th layer of silica gel
Its light extraction efficiency is directly affected, generally there is flat, three kinds of forms of hemispherical and paraboloidal, wherein hemispherical beam angle maximum,
It is suitable for general lighting application；Parabola beam angle is minimum, is suitable for local lighting application；And pancake falls between,
It is suitable for guidance lighting.
In a detailed embodiment, the array of sphere lens formation rule on the package cooling substrate.
Can be specifically rectangular array, diamond shape array, triangular array, circular array etc., referring specifically to Fig. 5, Fig. 6.Upper and lower two layers saturating
Mirror, which can align, to interlock, and two kinds of arrangements are each advantageous：The light that alignment condition is emitted from lens is gathered, and focusing effect is good；
The light between adjacent lens can staggeredly be gathered, produce focussing force.
Finally it should be noted that, the above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although
The present invention is described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that, it still may be used
To modify to the technical solution described in foregoing embodiments, or equivalent substitution is carried out to which part technical characteristic；
And these modification or replace, do not make appropriate technical solution essence depart from various embodiments of the present invention technical solution spirit and
Scope.
Claims (10)
1. a kind of high-power blue-ray LED double-decker packaging technology, it is characterised in that comprise the following steps：
A, package cooling substrate is prepared, LED lamp is welded on the package cooling substrate, is coated on package cooling substrate
First layer of silica gel；
B, two the first hemispherical groove moulds are reversely fastened, the first spherical die is formed, in first spherical die
Embedding the first lens silica gel, forms the first sphere lens；
C, first sphere lens are pressed in first layer of silica gel, made described in the first sphere lens half insertion
In first layer of silica gel；
D, the second layer of silica gel is coated on the first sphere lens top, the 3rd layer of silica gel is coated in second layer of silica gel；
E, two the second hemispherical groove moulds are reversely fastened, the second spherical die is formed, in second spherical die
Embedding the second lens silica gel, forms the second sphere lens；
F, second sphere lens are pressed in the 3rd layer of silica gel, made described in the second sphere lens half insertion
In 3rd layer of silica gel；
G, the 4th layer of silica gel is coated on the second sphere lens top；
Wherein, it is at least one layer of in second layer of silica gel, the 3rd layer of silica gel, the 4th layer of silica gel that there is fluorescent powder, institute
It is ultraviolet wick to state LED lamp.
2. high-power blue-ray LED double-decker packaging technology according to claim 1, it is characterised in that the step c tools
Body includes：
A first hemispherical groove mould on c1, removal first spherical die, no mould is coated spherical
Mirror is partially disposed in first layer of silica gel；
Another the first hemispherical groove mould on c2, removal first spherical die；
C3, be baked for first scheduled time to the package cooling substrate under the first predetermined temperature.
3. high-power blue-ray LED double-decker packaging technology according to claim 2, it is characterised in that described first is pre-
Constant temperature degree is 90 DEG C -125 DEG C, and first scheduled time is 15min-60min.
4. high-power blue-ray LED double-decker packaging technology according to claim 1, it is characterised in that the step f tools
Body includes：
A second hemispherical groove mould on f1, removal second spherical die, no mould is coated spherical
Mirror is partially disposed in the 3rd layer of silica gel；
Another the second hemispherical groove mould on f2, removal second spherical die；
F3, be baked for second scheduled time to the package cooling substrate under the second predetermined temperature.
5. high-power blue-ray LED double-decker packaging technology according to claim 4, it is characterised in that described second is pre-
Constant temperature degree is 100 DEG C -150 DEG C, and second scheduled time is 4h-12h.
6. according to the high-power blue-ray LED double-decker packaging technology of claim 1-5 any one of them, it is characterised in that institute
State the first layer of silica gel refractive index, the second layer of silica gel refractive index, the 3rd layer of silica gel refractive index, the 4th layer of silica gel folding
The rate of penetrating is sequentially increased, and the first sphere lens refractive index is more than the second layer of silica gel refractive index, and described second is spherical
Mirror refractive index is more than the 4th layer of silica gel refractive index.
7. high-power blue-ray LED double-decker packaging technology according to claim 6, it is characterised in that first ball
The array of shape lens, the second sphere lens formation rule on the package cooling substrate.
8. high-power blue-ray LED double-decker packaging technology according to claim 6, it is characterised in that second silicon
One layer in glue-line, the 3rd layer of silica gel, the 4th layer of silica gel, first sphere lens, second sphere lens
Or multilayer has fluorescent powder.
9. high power LED lens encapsulation process according to claim 6, it is characterised in that the heat-radiating substrate is aluminium base
Plate.
10. high power LED lens encapsulation process according to claim 8, it is characterised in that the aluminium base plate thickness is
0.5mm-10mm。
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711214942.XA CN108011009A (en) | 2017-11-28 | 2017-11-28 | A kind of high-power blue-ray LED double-decker packaging technology |
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| CN201711214942.XA CN108011009A (en) | 2017-11-28 | 2017-11-28 | A kind of high-power blue-ray LED double-decker packaging technology |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120217863A1 (en) * | 2011-02-25 | 2012-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Lighting device and method for manufacturing the same |
| CN105789406A (en) * | 2014-12-26 | 2016-07-20 | 司红康 | LED packaging structure |
| WO2016150837A1 (en) * | 2015-03-20 | 2016-09-29 | Osram Opto Semiconductors Gmbh | Optoelectronic lighting device and method for the production of an optoelectronic lighting device |
-
2017
- 2017-11-28 CN CN201711214942.XA patent/CN108011009A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120217863A1 (en) * | 2011-02-25 | 2012-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Lighting device and method for manufacturing the same |
| CN105789406A (en) * | 2014-12-26 | 2016-07-20 | 司红康 | LED packaging structure |
| WO2016150837A1 (en) * | 2015-03-20 | 2016-09-29 | Osram Opto Semiconductors Gmbh | Optoelectronic lighting device and method for the production of an optoelectronic lighting device |
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