CN108010941B - Packaging structure and method for light-emitting element - Google Patents
Packaging structure and method for light-emitting element Download PDFInfo
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- CN108010941B CN108010941B CN201711129490.5A CN201711129490A CN108010941B CN 108010941 B CN108010941 B CN 108010941B CN 201711129490 A CN201711129490 A CN 201711129490A CN 108010941 B CN108010941 B CN 108010941B
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
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- H—ELECTRICITY
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- H10K50/00—Organic light-emitting devices
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- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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Abstract
The invention provides a packaging structure and a packaging method for a light-emitting element. The packaging structure comprises: the TFT substrate comprises a substrate body and TFT units, a protective layer is arranged on the surface of the TFT substrate and provided with openings at the positions of the TFT units, the light-emitting element is arranged on the TFT substrate and comprises a first electrode layer, a light-emitting layer and a second electrode layer, the first electrode layer comprises a plurality of first electrode units, each first electrode unit is electrically connected with the electrode of each TFT unit through the opening, the light-emitting layer is electrically connected with each first electrode unit, the second electrode layer formed by Al or Ag is electrically connected with the whole surface of the light-emitting layer, the connection enhancement layer is arranged on the surface of the substrate and comprises metal oxide, and the second electrode layer is hermetically connected with the surface of the TFT substrate through the connection enhancement layer to package the light-emitting element. The packaging structure improves the air tightness.
Description
Technical Field
The invention relates to the technical field of packaging, in particular to a packaging structure and a packaging method for a light-emitting element.
Background
With the development of science and technology, the electroluminescent device has the advantages of high color gamut, good light-emitting uniformity and the like, and the electroluminescent device is used as a new generation of display and lighting products to enter the visual field of people, and main light-emitting materials such as organic matters or quantum dots in the electroluminescent device are easily corroded by water and oxygen to influence the service life of a final product, so that the packaging technology has an important influence on the long-term effective use of the electroluminescent device.
As shown in fig. 1, in the conventional packaging structure of the electroluminescent device, glass or an iron sheet is mostly used as a rear cover 1 ', and a TFT substrate 3 ' and the rear cover 1 ' are packaged by using a UV glue 2 ', so that the airtightness is poor, and a light-emitting element 4 ' in a light-emitting region of the device is still easily corroded by external water and oxygen; the cost of the etched back cover is high; the thickness of the rear cover is thicker (generally 0.4-0.7 mm thick), and the thickness of the final product is influenced.
Disclosure of Invention
The invention mainly aims to provide a packaging structure and a packaging method for a light-emitting element, so as to solve the problem of poor air tightness of the packaging structure of an electroluminescent device in the prior art.
In order to achieve the above object, according to one aspect of the present invention, there is provided a package structure for a light emitting element, including: the TFT substrate comprises a substrate body and a plurality of TFT units formed on the substrate body, a protective layer is arranged on the surface of the TFT substrate, an opening is formed in the protective layer on the surface of each TFT unit, the light-emitting element sequentially comprises a patterned first electrode layer, a light-emitting layer and a non-patterned second electrode layer in the direction far away from the TFT substrate, the patterned first electrode layer comprises a plurality of mutually-separated first electrode units, each first electrode unit is respectively arranged on the TFT units and is electrically connected with the electrode of the corresponding TFT unit through the opening, the light-emitting layer is electrically connected with each first electrode unit, the second electrode layer is electrically connected with the whole surface of the light-emitting layer, the packaging structure further comprises a connection enhancement layer, and the second electrode layer is hermetically connected with the surface of the TFT substrate through the connection enhancement layer, and encapsulating the light emitting element, wherein the connection enhancement layer is disposed on the surface of the substrate and is not electrically connected to the first electrode unit, the connection enhancement layer is formed of one or more metal oxides, and the second electrode layer is formed of Al or Ag.
Further, the protective layer is made of one or more materials selected from silicon dioxide, silicon nitride and silicon oxynitride, and the connection enhancement layer is made of one or more materials selected from ITO, IZO, molybdenum oxide and cadmium oxide.
Further, the material of the first electrode layer is the same as that of the connection reinforcing layer.
Furthermore, each light-emitting element is arranged in a light-emitting area of the substrate, the connection enhancement layer surrounds the light-emitting area, and the thickness of the connection enhancement layer is 5-50 nm.
Further, the package structure further includes a polymer layer disposed on an outer surface of the second electrode layer.
Further, the thickness of the second electrode layer is 300nm to 10 μm.
Further, the second electrode layer comprises a plurality of stacked non-patterned second electrode sub-layers, and the second electrode sub-layer farthest from the substrate is connected with the connection enhancement layer, preferably the second electrode sub-layers not connected with the connection enhancement layer are respectively connected with the substrate surface in a sealing manner.
Further, the forming process of the second electrode sub-layer is sputtering or evaporation, and the second electrode sub-layer formed by sputtering is located on the side, far away from the substrate, of the second electrode sub-layer formed by evaporation.
Furthermore, the package structure further includes a patterned insulating layer disposed on the substrate for separating the first electrode units.
According to another aspect of the present application, there is also provided a method of packaging a light emitting element including a first electrode layer, a light emitting layer, and a second electrode layer, the method comprising: preparing a TFT substrate, wherein the TFT substrate comprises a substrate body and a plurality of TFT units formed on the substrate body, the surface of the TFT substrate is provided with a protective layer, and the protective layer on the surface of each TFT unit is provided with an opening; arranging a first electrode material and a connection enhancement layer material on the TFT substrate to form a patterned first electrode layer and a connection enhancement layer, wherein the connection enhancement layer surrounds the patterned first electrode layer, the patterned first electrode layer comprises a plurality of first electrode units which are separated from each other, each first electrode unit is correspondingly and electrically connected with the TFT unit through the opening, the connection enhancement layer is not electrically connected with each first electrode unit, and the connection enhancement layer material comprises one or more metal oxides; arranging the light-emitting layer on the surface of the patterned first electrode layer, which is far away from the substrate, so that the light-emitting layer is electrically connected with each first electrode unit; and arranging the second electrode layer made of Al or Ag on the surfaces of the light-emitting layer and the connection enhancement layer far away from the substrate, wherein the second electrode layer is hermetically connected with the surface of the TFT substrate through the connection enhancement layer so as to package the light-emitting element.
Further, the material of the protection layer is selected from one or more of silicon dioxide, silicon nitride and silicon oxynitride, the material of the connection enhancement layer is selected from one or more of ITO, IZO, molybdenum oxide and cadmium oxide, and the material of the first electrode and the material of the connection enhancement layer are the same, wherein the step of disposing the material of the first electrode and the material of the connection enhancement layer on the TFT substrate includes: and sputtering raw materials of the materials on the surface of the TFT substrate, and partially etching the formed materials to form a patterned first electrode layer and a connection enhancement layer.
Further, the second electrode layer includes a plurality of second electrode sublayers, and the step of disposing the second electrode layer includes: evaporating Al or Ag on the surfaces of the luminous layer and the optional connection reinforcing layer to form an initial second electrode sublayer; and sputtering Al or Ag on the surfaces of the initial second electrode sublayer and at least part of the connection enhancement layer to form the second electrode layer.
By applying the technical scheme of the invention, the invention provides the packaging structure and the method for the light-emitting element, the second electrode layer formed by Al or Ag is hermetically connected with the surface of the substrate through the connection enhancement layer, namely the second electrode layer has the function of an electrode and also has the function of packaging the light-emitting element, the packaging structure is simple and easy to implement, and the packaging process difficulty is reduced; and, above-mentioned connection enhancement layer sets up on the base plate surface, has increased the surface tension on base plate surface, has strengthened the adhesive force of the sealing connection of second electrode layer and base plate surface, compares with the packaging structure who encapsulates the back lid through UV glue bonding glass or iron sheet among the prior art, has avoided the phenomenon that the back lid of encapsulation easily drops from the base plate surface that has the protection film, has solved the relatively poor problem of packaging structure gas tightness of electroluminescent device among the prior art, has realized the effect that promotes packaging structure's gas tightness.
In addition to the objects, features and advantages described above, other objects, features and advantages of the present invention are also provided. The present invention will be described in further detail below with reference to the drawings.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification, illustrate exemplary embodiments of the invention and together with the description serve to explain the invention and not to limit the invention. In the drawings:
fig. 1 shows a schematic diagram of an alternative packaging structure of an electroluminescent device provided by the prior art;
fig. 2 is a schematic diagram illustrating an alternative package structure for a light emitting device according to the present invention;
fig. 3 is a schematic diagram illustrating a preferred package structure for a light emitting device according to the present invention;
fig. 4 is a schematic diagram illustrating another preferred package structure for a light emitting device according to the present invention;
fig. 5 is a schematic diagram illustrating a further preferred package structure for a light emitting device according to the present invention; and
fig. 6 is a flow chart illustrating an alternative method for packaging a light emitting device according to the present invention.
Wherein the figures include the following reference numerals:
1', a rear cover; 2', UV glue; 3', a TFT substrate; 4', a light emitting element; 2. connecting the enhancement layer; 31, a substrate body; 32. a TFT unit; 33. a protective layer; 411. a first electrode unit; 42. a light emitting layer; 43. a second electrode layer; 431. a second electrode sublayer; 5. a polymer layer; 6. an insulating layer.
Detailed Description
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict. The present invention will be described in detail below with reference to the embodiments with reference to the attached drawings.
In order to make the technical solutions of the present invention better understood, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and claims of the present invention and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged under appropriate circumstances in order to facilitate the description of the embodiments of the invention herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
As described in the background art, the prior art uses UV glue to adhere the rear cover of glass or iron plate to the substrate to encapsulate the electroluminescent device, but the rear cover is easy to fall off. The problem that the air tightness of a packaging structure of an electroluminescent device adopted in the prior art is poor is solved. The inventors of the present application have studied in view of the above problems and have proposed a package structure for a light emitting element and a method, as shown in fig. 2 to 5, the package structure for a light emitting element including: a TFT substrate, a light emitting element, and a connection enhancement layer 2, wherein:
the TFT substrate comprises a substrate body 31 and a plurality of TFT units 32 formed on the substrate body 31, the surface of the TFT substrate is provided with a protective layer 33, the protective layer 33 on the surface of each TFT unit 32 is provided with an opening,
the light emitting element includes, in order in a direction away from the TFT substrate: a patterned first electrode layer including a plurality of first electrode units 411 spaced apart from each other, a light emitting layer 42, and a non-patterned second electrode layer 43, the first electrode units 411 being respectively disposed on the TFT units 32 and electrically connected to the electrodes of the corresponding TFT units 32 through openings, the light emitting layer 42 being electrically connected to the first electrode units 411, the second electrode layer 43 being electrically connected to the light emitting layer 42 over the entire surface thereof,
the package structure further includes a connection enhancement layer 2, and the second electrode layer 43 is hermetically connected to the surface of the TFT substrate through the connection enhancement layer 2 to package the light emitting device, wherein the connection enhancement layer 2 is disposed on the surface of the substrate and is not electrically connected to the first electrode unit 411, the connection enhancement layer 2 is formed of one or more metal oxides, and the second electrode layer 43 is formed of Al or Ag.
By applying the technical scheme of the invention, the second electrode layer 43 formed by Al or Ag is hermetically connected with the surface of the substrate through the connection enhancement layer 2, namely the second electrode layer 43 has an electrode function and also has the function of packaging a light-emitting element, the packaging structure is simple and easy to implement, the working procedures of cleaning and drying a rear cover, coating UV glue, laminating the UV glue and the like in the conventional packaging structure are omitted, and the packaging process difficulty is reduced; and, above-mentioned connection enhancement layer 2 sets up on the substrate surface, has increased the surface tension on substrate surface, has strengthened the adhesive force of the sealing connection of second electrode layer 43 and substrate surface, compares with the packaging structure who encapsulates the back lid through UV glue bonding glass or iron sheet among the prior art, has avoided the phenomenon that the back lid of encapsulation easily drops from the substrate surface that has the protection film, has solved the relatively poor problem of packaging structure gas tightness of electroluminescent device among the prior art, has realized the effect that promotes packaging structure's gas tightness.
The substrate body in the TFT substrate may be rigid or flexible, and in some embodiments, the rigid substrate body is, for example, but not limited to, a quartz substrate, a glass substrate, or a metal substrate; the flexible substrate body is, for example, a glass film substrate, a stainless steel film substrate, or a plastic substrate, and the material of the plastic substrate may be Polyimide (PI), polyethylene terephthalate (PET), polyether sulfide (PES), Polycarbonate (PC), or the like.
Compared with the existing iron sheet packaging rear cover, the packaging structure can also be suitable for flexible packaging, and has a wide application range; compared with the existing glass packaging rear cover, the packaging structure does not need an etching process, and the process is simple; in addition, the second electrode layer is also used as a packaging rear cover, and compared with the existing packaging structure, the thickness of the rear cover is reduced, so that the total thickness of the packaged product is reduced.
The light-emitting layer 42 may be unpatterned, as shown in fig. 2 to 4; or may be patterned as shown in fig. 5. The manufacturing process of the light emitting layer 42 may be selected from thermal evaporation, printing or spin coating, the former two are preferred, and other manufacturing processes may be used.
As shown in fig. 5, the light-emitting element may further include, in addition to the two electrode layers and the light-emitting layer 42, functional layers disposed between the electrode layers and the light-emitting layer 42, for example, a hole injection layer 424 and a hole transport layer 423 disposed between each of the first electrode units 411 and the light-emitting layer 42, and an electron transport layer 422 and an electron injection layer 421 disposed between the second electrode sub-layer 431 and the light-emitting layer 42, which may contribute to the balance of hole and electron transport and injection of the light-emitting element and improve the light-emitting efficiency. The functional layers are not limited to the ones shown in fig. 5, and may also include functional layers with other functions, and those skilled in the art may select and set corresponding functional layers according to different needs for implementing the functions.
In some preferred embodiments, the material of the protection layer 33 is selected from one or more of silicon dioxide, silicon nitride and silicon oxynitride, and the material forming the connection enhancing layer 2 is selected from one or more of ITO, IZO, molybdenum oxide and cadmium oxide.
The protective layer material is not limited to the above-mentioned materials, and may be another protective layer material for protecting the TFT substrate from corrosion and the like. By adopting the material of the protective layer 33 and the corresponding material of the connection enhancement layer 2, the adhesion of the substrate surface to the second electrode layer 43 can be effectively enhanced, and the materials are simple and easy to obtain and have high practicability.
In a preferred embodiment, the material of the first electrode layer is the same as that of the connection enhancement layer, so that the first electrode layer and the connection enhancement layer can be prepared simultaneously, the process flow is simplified, and the production cost is saved.
In order to describe the arrangement position of the connection enhancement layer, a light-emitting region is described first, and the region of the substrate where the light-emitting elements are located is the light-emitting region, that is, each of the light-emitting elements is arranged in the light-emitting region of the substrate, so that the connection enhancement layer can be arranged to surround the light-emitting region.
Optionally, the thickness of the connection enhancement layer is 5-50 nm, and the connection enhancement layer is thinner, so that a better adhesion enhancement effect can be achieved with less materials.
In order to further improve the packaging effect, as shown in fig. 2 to 5, the packaging structure may further include a polymer layer 5, the polymer layer 5 is disposed on an outer surface of the second electrode layer 43, and the polymer layer 5 may protect the second electrode layer 43 and enhance the wear resistance thereof. Preferably, the material of the polymer layer 5 is epoxy resin, and the material can achieve the effects of wear resistance, buffering, flexible and extensible performance and the like.
In the above embodiment, the thickness of the second electrode layer may be 300nm to 10 μm, and the second electrode layer having the thickness in this range can exhibit good packaging performance, and the thicker the electrode, the better the electrode thickness, the package airtightness can be ensured, and the production efficiency can be considered.
The second electrode layer may be a single layer or may have a multilayer structure.
In some alternative embodiments, as shown in fig. 2 to 5, the second electrode layer may include a plurality of stacked non-patterned second electrode sub-layers 431, and the second electrode sub-layer 431 farthest from the substrate is connected to the connection enhancement layer 2, in other words, among the plurality of second electrode sub-layers 431 of the second electrode layer 43, the second electrode sub-layer 431 located at the outermost layer is connected to the TFT substrate through the connection enhancement layer 2, and the other second electrode sub-layers 431 located at the inner layer may be connected to the substrate through the connection enhancement layer 2 (see fig. 2 and 3), may be directly connected to the substrate without the connection enhancement layer 2 (see fig. 4 and 5), or may not be hermetically connected to the substrate. Different second electrode sub-layers 431 may correspond to different encapsulation processes and/or materials.
With the above alternative embodiment, since the outermost second electrode sub-layer 431 plays a main role in encapsulation and is connected to the substrate surface through the connection enhancement layer 2, the encapsulation effect of the second electrode layer 43 on the light emitting layer 42 can be substantially ensured, and meanwhile, the arrangement of the second electrode layer 43 in the multilayer structure can also meet different sealing requirements and electrode conductivity requirements.
In the above alternative embodiment, the package structure shown in fig. 4 and 5 is preferable, that is, the second electrode sub-layers 431 not connected to the connection enhancement layer 2 can be respectively and hermetically connected to the substrate surface, so that the function of substantially blocking external water and oxygen can be satisfied, and the light emitting layer 42 can be protected from water and oxygen. The encapsulation structure as shown in fig. 2 and 3 is more preferable, that is, all the second electrode sub-layers 431 of the second electrode layer 43 are hermetically connected with the substrate surface through the connection enhancing layer 2, which is the best for encapsulation.
The process of forming the second electrode layer 431 is sputtering or vapor deposition, and the second electrode layer 431 formed by sputtering is located on the side of the second electrode layer 431 formed by vapor deposition, which is away from the substrate. The second electrode sublayers 431 prepared by sputtering have good air tightness, the evaporation process has small damage to the film layer, and the second electrode sublayers 431 are prepared by adopting the processes of inner layer evaporation and outer layer sputtering, so that the advantages of the two processes can be exerted, and the packaging effect of the packaging structure is improved.
As shown in fig. 5, in order to better separate the first electrode units 411 in the package structure, the package structure may further include a patterned insulating layer 6, where the patterned insulating layer 6 is disposed on the substrate, so as to facilitate forming a plurality of independent and separated first electrode units 411 and facilitating manufacturing of subsequent films.
According to another aspect of the present invention, there is also provided a method of packaging a light emitting element including a first electrode layer, a light emitting layer, and a second electrode layer, as shown in fig. 6, the method comprising the steps of:
s101, preparing a TFT substrate, wherein the TFT substrate comprises a substrate body and a plurality of TFT units formed on the substrate body, the surface of the TFT substrate is provided with a protective layer, and the protective layer on the surface of each TFT unit is provided with an opening;
s103, disposing a first electrode material and a connection enhancement layer material on the TFT substrate to form a patterned first electrode layer and a connection enhancement layer, wherein the connection enhancement layer surrounds the patterned first electrode layer, the patterned first electrode layer includes a plurality of first electrode units separated from each other, each of the first electrode units is electrically connected to the TFT unit through the opening, the connection enhancement layer is not electrically connected to each of the first electrode units, and the connection enhancement layer material includes one or more metal oxides;
s105, arranging a light-emitting layer on the surface of the patterned first electrode layer, which is far away from the substrate, and electrically connecting the light-emitting layer with each first electrode unit;
and S107, arranging a second electrode layer made of Al or Ag on the surface of the light-emitting layer and the surface of the connection enhancement layer far away from the substrate, wherein the second electrode layer is hermetically connected with the surface of the TFT substrate through the connection enhancement layer so as to package the light-emitting element.
By adopting the packaging method, the second electrode layer 43 formed by Al or Ag is hermetically connected with the surface of the substrate through the connection enhancement layer 2, namely the second electrode layer 43 has an electrode function and also has the function of packaging a light-emitting element, the packaging structure is simple and easy to implement, the working procedures of cleaning and drying a rear cover, coating UV glue, laminating the UV glue and the like in the existing packaging structure are omitted, and the packaging process difficulty is reduced; and, above-mentioned connection enhancement layer 2 sets up on the substrate surface, has increased the surface tension on substrate surface, has strengthened the adhesive force of the sealing connection of second electrode layer 43 and substrate surface, compares with the packaging structure who encapsulates the back lid through UV glue bonding glass or iron sheet among the prior art, has avoided the phenomenon that the back lid of encapsulation easily drops from the substrate surface that has the protection film, has solved the relatively poor problem of packaging structure gas tightness of electroluminescent device among the prior art, has realized the effect that promotes packaging structure's gas tightness.
In an alternative embodiment, the material of the protection layer is selected from one or more of silicon dioxide, silicon nitride and silicon oxynitride, the material of the connection enhancement layer is selected from one or more of ITO, IZO, molybdenum oxide and cadmium oxide, and the material of the first electrode is the same as the material of the connection enhancement layer, wherein the step S103 of disposing the material of the first electrode and the material of the connection enhancement layer on the TFT substrate includes: and sputtering raw materials of the materials on the surface of the TFT substrate, and partially etching the formed materials to form a patterned first electrode layer and a connection enhancement layer.
Through the optional implementation mode, the first electrode layer and the connection enhancement layer can be prepared at the same time, the process flow is simplified, and the production cost is saved.
Taking ITO as an example, in the prior art, ITO is generally sputtered on the whole surface, and then all ITO on the periphery of the TFT unit is etched off, so as to form a first electrode layer on a light-emitting region corresponding to the TFT unit; by adopting the packaging method, after the ITO is sputtered on the whole surface, the whole ITO of the non-light-emitting area does not need to be etched, a connection enhancement layer can be formed on part of the ITO of the non-light-emitting area, and a first electrode layer can be formed on part of the ITO of the light-emitting area; compared with the prior art, the packaging method reduces the etching area, simplifies the process, saves the materials, retains the materials to increase the surface energy of the surface of the substrate, and increases the adhesive force between the subsequent second electrode layer and the surface protection layer of the substrate, thereby improving the sealing effect of the packaging structure.
The second electrode layer may include a plurality of second electrode sublayers, and the step S107 of disposing the second electrode layer includes: evaporating Al or Ag on the surfaces of the luminescent layer and the optional connection reinforcing layer to form an initial second electrode sublayer; and sputtering Al or Ag on the surfaces of the initial second electrode sublayer and at least part of the connection enhancement layer to form the second electrode layer.
The second electrode sub-layer is formed by a process selected from sputtering or evaporation, and the second electrode sub-layer formed by sputtering is positioned on the side, away from the substrate, of the second electrode sub-layer formed by evaporation. The second electrode sublayers prepared by sputtering have good air tightness, the evaporation process has small damage to the film layer, and the second electrode sublayers are prepared by adopting the processes of inner layer evaporation and outer layer sputtering, so that the advantages of the two processes can be exerted, and the packaging effect of the packaging structure is improved.
The following further describes the package structure and method for light emitting device provided in the present application with reference to the examples and comparative examples.
Example 1
As shown in fig. 4, a TFT substrate is prepared, in which a TFT unit 32 and a silicon dioxide or silicon nitride protective layer 33 are formed on a glass substrate body 31, the thickness of the TFT substrate is 20nm, and an ITO via hole or an opening is etched in the protective layer 33, then a sub-pixel photoresist insulating layer 6 with a thickness of 0.8um is formed on the protective layer 33 corresponding to the TFT unit 32, and an ITO transparent conductive film is sputtered on the photoresist insulating layer 6 and the protective layer 33 on a surface of one side of the TFT substrate, the thickness of the ITO transparent conductive film is 35nm, the ITO is etched, an edge sealing region and ITO on the TFT substrate corresponding to the sub-pixel region are remained, and a connection enhancement layer 2 and a first electrode unit 411 are respectively formed, wherein the light-emitting region includes a sub-pixel region, and the edge sealing region surrounds the light-emitting; arranging a light-emitting layer 42 on the ITO surface of the sub-pixel region, wherein the structure of the light-emitting layer 42 is NPB/ALq/LiF, and the thicknesses of the light-emitting layer 42 are respectively 80nm/40nm/1 nm; under the shielding of a mask plate (open mask), 100nm of aluminum films are subjected to vacuum thermal evaporation on the light-emitting layer 42 to form a second electrode sublayer 431, then, under the shielding of the mask plate, 500nm of aluminum films are sputtered to form the second electrode sublayer 431 positioned on the outer layer, the peripheries of the aluminum films are sputtered on the ITO connecting enhancement layer 2, the aluminum film layers and the TFT substrate form a sealed space, and the light-emitting layer 42 and the ITO first electrode units 411 in the sub-pixel regions are positioned in the sealed space. An epoxy film UV cured film was coated on the aluminum second electrode layer 43 to form a polymer layer 5 having a thickness of 20 μm.
Comparative example:
preparing a TFT substrate, wherein a TFT unit 32 and a silicon dioxide or silicon nitride protective layer 33 are manufactured on a glass substrate body 31 on the TFT substrate, the thickness of the TFT substrate is 20nm, an ITO (indium tin oxide) through hole is etched on the protective layer 33, then a sub-pixel photoresist insulating layer 6 with the photoresist thickness of 0.8um is manufactured on the protective layer 33 right above the TFT unit 32, an ITO transparent conductive film is sputtered on the photoresist insulating layer 6 on the surface of one side of the TFT substrate and the protective layer 33, the thickness of the ITO transparent conductive film is 35nm, ITO is etched, and ITO on the TFT substrate corresponding to a sub-pixel area is reserved to form a first electrode unit 411; arranging a light-emitting layer 42 on the ITO surface of the sub-pixel region, wherein the structure of the light-emitting layer is NPB/ALq/LiF, and the thickness of the light-emitting layer is 80nm/40nm/1nm respectively; and under the shielding of a mask plate (open mask), performing vacuum thermal evaporation on a 150nm aluminum film on the light-emitting layer 42 to form a second electrode layer, then coating UV packaging glue, adhering rear cover glass, pressing the rear cover glass under low pressure and curing the UV glue by UV, packaging the rear cover glass, the UV glue and the TFT substrate to form a sealed space, and positioning the light-emitting layer 42 and the ITO first electrode unit in the sub-pixel region in the sealed space.
The package structures in the above examples and comparative examples were subjected to a package effect test, and the package structures were placed under the same test conditions (60 ℃ temperature and 80% humidity) for observation and recording.
The test shows that the packaging structure formed by the normal packaging process in the comparative example is as follows: after 306 hours, small black spots appear on pixels at the edge of the package; the package structure in embodiment 1 of the present application: after 455 hours the pixel edge appeared to be a small black dot.
As can be seen from the comparison of the two packaging structures, the packaging structure in embodiment 1 has a better packaging effect on the light emitting device, which is characterized by higher air tightness, less possibility of falling off, and better stability.
By adopting the packaging structure and the method for the light-emitting element, the second electrode layer formed by Al or Ag is hermetically connected with the surface of the substrate through the connection enhancement layer, namely the second electrode layer has an electrode function and also has the function of packaging the light-emitting element, the packaging structure is simple and easy to implement, the working procedures of cleaning and drying a rear cover, coating UV glue, pressing the UV glue and the like in the existing packaging structure are omitted, and the packaging process difficulty is reduced; and, above-mentioned connection enhancement layer sets up on the base plate surface, has increased the surface tension on base plate surface, has strengthened the adhesive force of the sealing connection of second electrode layer and base plate surface, compares with the packaging structure who encapsulates the back lid through UV glue bonding glass or iron sheet among the prior art, has avoided the phenomenon that the back lid of encapsulation easily drops from the base plate surface that has the protection film, has solved the relatively poor problem of packaging structure gas tightness of electroluminescent device among the prior art, has realized the effect that promotes packaging structure's gas tightness.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (12)
1. A package structure for a light emitting element, comprising: a TFT substrate and a light-emitting element, wherein the TFT substrate comprises a substrate body and a plurality of TFT units formed on the substrate body, the surface of the TFT substrate is provided with a protective layer, the protective layer on the surface of each TFT unit is provided with an opening, the light-emitting element sequentially comprises a patterned first electrode layer, a light-emitting layer and a non-patterned second electrode layer in the direction far away from the TFT substrate, the patterned first electrode layer comprises a plurality of mutually-separated first electrode units, each first electrode unit is respectively arranged on the TFT units and is electrically connected with the electrode of the corresponding TFT unit through the opening, the light-emitting layer is electrically connected with each first electrode unit, and the second electrode layer is electrically connected with the whole surface of the light-emitting layer,
the packaging structure further comprises a connection enhancement layer, the second electrode layer is hermetically connected with the surface of the TFT substrate through the connection enhancement layer to package the light-emitting element, wherein the connection enhancement layer is arranged on the surface of the substrate and is not electrically connected with the first electrode unit, the material forming the connection enhancement layer comprises one or more metal oxides, the material forming the second electrode layer comprises Al or Ag, the second electrode layer comprises a plurality of superposed non-patterned second electrode sub-layers, and the second electrode sub-layer farthest from the substrate is connected with the connection enhancement layer.
2. The package structure of claim 1, wherein the protective layer is made of one or more materials selected from silicon dioxide, silicon nitride and silicon oxynitride, and the connection enhancement layer is made of one or more materials selected from ITO, IZO, molybdenum oxide and cadmium oxide.
3. The package structure of claim 2, wherein the first electrode layer material and the connection enhancement layer material are the same.
4. The package structure according to claim 1, wherein each of the light emitting elements is disposed in a light emitting region of the substrate, the connection enhancement layer is disposed to surround the light emitting region, and the thickness of the connection enhancement layer is 5 to 50 nm.
5. The package structure of claim 1, further comprising a polymer layer disposed on an outer surface of the second electrode layer.
6. The package structure of claim 1, wherein the thickness of the second electrode layer is 300nm to 10 μm.
7. The package structure according to claim 1, wherein the second electrode sub-layers which are not connected to the connection enhancement layer are hermetically connected to the substrate surface respectively.
8. The package structure according to claim 7, wherein the second electrode sub-layer is formed by sputtering or evaporation, and the sputtered second electrode sub-layer is located on a side of the evaporated second electrode sub-layer away from the substrate.
9. The package structure of claim 1, further comprising a patterned insulating layer disposed on the substrate for separating the first electrode units.
10. A method of packaging a light emitting element including a first electrode layer, a light emitting layer, and a second electrode layer, the method comprising:
preparing a TFT substrate, wherein the TFT substrate comprises a substrate body and a plurality of TFT units formed on the substrate body, the surface of the TFT substrate is provided with a protective layer, and the protective layer on the surface of each TFT unit is provided with an opening;
arranging a first electrode material and a connection enhancement layer material on the TFT substrate to form a patterned first electrode layer and a connection enhancement layer, wherein the connection enhancement layer surrounds the patterned first electrode layer, the patterned first electrode layer comprises a plurality of first electrode units which are separated from each other, each first electrode unit is correspondingly and electrically connected with the TFT unit through the opening, the connection enhancement layer is not electrically connected with each first electrode unit, and the connection enhancement layer material comprises one or more metal oxides;
arranging the light-emitting layer on the surface of the patterned first electrode layer, which is far away from the substrate, so that the light-emitting layer is electrically connected with each first electrode unit;
and arranging a second electrode layer made of Al or Ag on the surfaces of the light-emitting layer and the connection enhancement layer far away from the substrate, wherein the second electrode layer is hermetically connected with the surface of the TFT substrate through the connection enhancement layer to encapsulate the light-emitting element, the second electrode layer comprises a plurality of superposed non-patterned second electrode sub-layers, and the second electrode sub-layer farthest from the substrate is connected with the connection enhancement layer.
11. The method according to claim 10, wherein the protective layer is made of one or more materials selected from silicon dioxide, silicon nitride and silicon oxynitride, the connection enhancement layer is made of one or more materials selected from ITO, IZO, molybdenum oxide and cadmium oxide, and the first electrode material and the connection enhancement layer are made of the same material, wherein the step of disposing the first electrode material and the connection enhancement layer on the TFT substrate comprises:
and sputtering raw materials of the materials on the surface of the TFT substrate, and partially etching the formed materials to form the patterned first electrode layer and the connection enhancement layer.
12. The packaging method according to claim 10 or 11, wherein the step of providing the second electrode layer comprises: evaporating Al or Ag on the surfaces of the luminous layer and the optional connection reinforcing layer to form an initial second electrode sublayer; and sputtering Al or Ag on the surfaces of the initial second electrode sublayer and at least part of the connection enhancement layer to form the second electrode layer.
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| CN101673758A (en) * | 2004-09-17 | 2010-03-17 | 株式会社半导体能源研究所 | Display device and manufacturing method thereof |
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| KR102158771B1 (en) * | 2013-08-08 | 2020-09-23 | 삼성디스플레이 주식회사 | Organic light emitting diode display |
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| CN101673758A (en) * | 2004-09-17 | 2010-03-17 | 株式会社半导体能源研究所 | Display device and manufacturing method thereof |
| CN103257491A (en) * | 2006-09-29 | 2013-08-21 | 株式会社半导体能源研究所 | Semiconductor device |
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