CN107995994A - Dry ecthing equipment - Google Patents
Dry ecthing equipment Download PDFInfo
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- CN107995994A CN107995994A CN201680042993.6A CN201680042993A CN107995994A CN 107995994 A CN107995994 A CN 107995994A CN 201680042993 A CN201680042993 A CN 201680042993A CN 107995994 A CN107995994 A CN 107995994A
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- substrate
- dry ecthing
- support column
- ecthing equipment
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- 239000000758 substrate Substances 0.000 claims abstract description 105
- 239000000463 material Substances 0.000 claims abstract description 21
- 239000012528 membrane Substances 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims description 23
- 238000006243 chemical reaction Methods 0.000 claims description 22
- 238000005530 etching Methods 0.000 claims description 20
- 230000008569 process Effects 0.000 claims description 17
- 230000002159 abnormal effect Effects 0.000 claims description 5
- 230000007797 corrosion Effects 0.000 claims description 5
- 238000005260 corrosion Methods 0.000 claims description 5
- 230000007423 decrease Effects 0.000 claims description 5
- 238000009423 ventilation Methods 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- 238000012545 processing Methods 0.000 abstract description 6
- 238000012544 monitoring process Methods 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 10
- 239000000919 ceramic Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 206010008469 Chest discomfort Diseases 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- WMIYKQLTONQJES-UHFFFAOYSA-N hexafluoroethane Chemical compound FC(F)(F)C(F)(F)F WMIYKQLTONQJES-UHFFFAOYSA-N 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000009331 sowing Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32908—Utilities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
A kind of dry ecthing equipment, for being etched to the membrane material being arranged on substrate 200, including support column 10, pressure sensor 20 and controller 30.More support columns 10 are used to support substrate 200.Multiple pressure sensors 20 are respectively used to the pressure that sensing substrate 200 is applied on corresponding support column 10.Controller 30 is used for the output of processing pressure sensor 20 to judge whether substrate 200 crushes.Whether the effective monitoring substrate of pressure that pressure sensor 20 can be applied on corresponding support column 10 by substrate 200 damages, and the equipment component that the working status for changing relevant device element in time by controller 30 avoids contacting with substrate is damaged, and extends the service life of dry ecthing equipment.
Description
Technical field
The present invention relates to display device manufacturing field, and in particular to a kind of dry ecthing equipment.
Background technology
When automating dry ecthing, membrane material, which is disposed on the substrate, is etched technique, however, in etching process, substrate may
Occur to crush, if the equipment component contacted with substrate may be damaged by continuing subsequent technique.
The content of the invention
It is contemplated that solve at least some of the technical problems in related technologies.For this reason, the present invention carries
Go out a kind of dry ecthing equipment.
The dry ecthing equipment of embodiment of the present invention, it is described for being etched to the membrane material being disposed on the substrate
Dry ecthing equipment includes：
The support column of the more diverse locations for being used to support the substrate；
Multiple pressure sensors for being respectively used to sense the pressure that the substrate is applied on the corresponding support column；With
For handling the output of the pressure sensor to judge controller that whether substrate crushes.
In embodiment of the present invention, the pressure that pressure sensor can be applied on corresponding support column by substrate effectively monitors
Whether substrate damages, and the working status for changing by controller relevant device element in time avoids the equipment member with contacting substantially
Part is damaged, and extends the service life of dry ecthing equipment.
In some embodiments, substrate described in the more support column vertical supports.
In some embodiments, the substrate is rectangular, and the more support columns support the edge of the substrate respectively
And core.
In some embodiments, the dry ecthing equipment includes bottom electrode plate, and the more support columns are liftably set
Put in the bottom electrode plate surface,
The controller be used to control the support column to rise when picking and placeing the substrate so that the substrate lift away from it is described
Bottom electrode plate and the support column is controlled to decline in etching process so that the substrate is placed on the bottom electrode plate.
In some embodiments, the controller is additionally operable to detect the pressure sensor signal and described detecting
Pressure sensor signal controls the support column to stop lifting when abnormal.
In some embodiments, the support column is vertically arranged with the bottom electrode plate.
In some embodiments, the support column include rise when epimere separated with the bottom electrode plate, it is described on
Section, which is adopted, to be made from an insulative material.
In some embodiments, the support column includes the hypomere being connected with the epimere, and the hypomere is using stainless
Bracing members.
In some embodiments, the dry ecthing equipment includes hoistable platform, and the support column is arranged on the lifting
On platform, the pressure sensor is arranged on the corresponding support column and the hoistable platform, and the controller is used to control
The hoistable platform lifting is made to lift the support column.
In some embodiments, the dry ecthing equipment include bottom electrode plate and with the bottom electrode plate is opposite powers on
Pole plate, venthole is offered on the electric pole plate, and the venthole is used to be passed through etching gas into the dry ecthing equipment,
The controller is used to detect the pressure sensor signal and is controlled when the pressure sensor signal is abnormal
The ventilation bore closure.
In some embodiments, the dry ecthing equipment includes manipulator, and the manipulator is used to carry the substrate
Pass in and out the reaction chamber.
In some embodiments, reaction chamber, the dry ecthing are formed between the electric pole plate and the bottom electrode plate
Equipment includes multiple reaction chambers, and the multiple reaction chamber is separate.
The additional aspect and advantage of the present invention will be set forth in part in the description, and will partly become from the following description
Obtain substantially, or recognized by the practice of the present invention.
Brief description of the drawings
The above-mentioned and/or additional aspect and advantage of the present invention is from combining in description of the accompanying drawings below to embodiment by change
Obtain substantially and be readily appreciated that, wherein：
Fig. 1 is the side schematic view of the dry ecthing equipment of embodiment of the present invention.
Fig. 2 is enlarged diagrams of the Fig. 1 at I.
Fig. 3 is the floor map of the dry ecthing equipment of embodiment of the present invention.
Fig. 4 is another floor map of the dry ecthing equipment of embodiment of the present invention.
Fig. 5 is the another floor map of the dry ecthing equipment of embodiment of the present invention.
Embodiment
Embodiments of the present invention are described further below in conjunction with attached drawing.Same or similar label is from beginning in attached drawing
To the same or similar element of expression eventually or there is same or like element.
In addition, the embodiments of the present invention described below in conjunction with the accompanying drawings are exemplary, it is only used for explaining the present invention's
Embodiment, and be not considered as limiting the invention.
Please refer to Fig.1 and Fig. 2, the dry ecthing equipment 100 of embodiment of the present invention, for being arranged on substrate 200
Membrane material (not shown) is etched.Dry ecthing equipment 100 includes more support columns 10, multiple pressure sensors 20 and control
Device 30.More support columns 10 are used to support the diverse location of substrate 200.Multiple pressure sensors 20 are respectively used to sensing substrate
200 are applied to the pressure on corresponding support column 10.Controller 30 is used for the output of processing pressure sensor 20 to judge substrate
Whether 200 crush.
Dry ecthing is more applied in the reaction of TFT-LCD (liquid crystal display) processing procedure, and the base that the reaction of TFT-LCD processing procedures uses
Plate 200 is usually glass, and thickness is only 0.3-0.7 millimeters, and fracture or other damages easily occur in dry etch process.
It is appreciated that if substrate 200 does not crush, the pressure that substrate 200 is applied on each support column 10 should
It can measure and be fixed, for example, substrate 200 is kept flat, then it is essentially identical to be applied to the pressure of each support column 10, such as
This can measure record pressure by default.If the pressure that pressure sensor 20 measures is essentially identical with default pressure, then control
Device 30 processed may determine that substrate 200 is completely unbroken, and if pressure and default pressure difference that pressure sensor 20 measures compared with
Greatly, then controller 30 may determine that substrate 200 is broken.
Therefore, the dry ecthing equipment 100 of embodiment of the present invention, pressure sensor 20 can be applied to pair by substrate 200
Answer whether the effective monitoring substrate 200 of the pressure on support column 10 damages, and relevant device element is changed by controller 30 in time
Working status avoid being damaged with the equipment component contacted substantially, extend the service life of dry ecthing equipment 100.
Membrane material is arranged on substrate 200, and covers 200 surface of substrate.The thickness of membrane material is only several microns.Membrane material surface is set
Be equipped with photoresist, membrane material dry ecthing be exactly active group in the plasma formed using etching gas under electric field acceleration effect with
The part that membrane material surface is not blocked by photoresist reacts to form volatile materials and take away with air-flow, realizes membrane material surface pattern
Or the etching of circuit.
Dry ecthing is easy to operate, and water consumption is small, has saved the energy, reduces the manufacture cost of display screen or semiconductor.
Meanwhile dry ecthing can realize anisotropic etching, so as to ensure that the fidelity after the fine diagrams transfer in 200 membrane material of substrate
Property.
In some embodiments, more 10 vertical support substrates 200 of support column.
In this way, the pressure and the gravity of substrate 200 that substrate 200 applies support column 10 are equal, pressure sensor 20 is direct
It can judge whether substrate 200 damages after measuring pressure, without carrying out other conversions to the pressure value measured, simplify pressure
The program of force snesor 20, improves the response speed of pressure sensor 20, ensure that pressure sensing after damage occurs in substrate 200
Device 20 can be found in time.
Certainly, in other embodiments, support column 10 can also be arranged as required to so that support column 10 and substrate 200
Form certain angle.
Specifically, the part that support column 10 and substrate 200 contact can set toothing.
In this way, the frictional force between support column 10 and substrate 200 greatly increases, 10 supporting substrate 200 of support column is not easy to send out
Raw displacement or inclination, improve the stability that substrate 200 is arranged on support column 10, ensure that etching reaction can stablize into
OK.
In some embodiments, substrate 200 is rectangular, and more support columns 10 distinguish the edge of supporting substrate 200 with
Center portion point.
In this way, support column 10 can be the support that substrate 200 provides stabilization, at the same time, moreover it is possible to save the quantity of support column 10, drop
Low processing cost.Certainly, the quantity of support column 10 reduces the space that can also optimize in dry ecthing equipment 100, makes dry ecthing equipment
100 structure is simpler, it is easier to manufactures.
The quantity of support column 10 can be 10.
Specifically, 2 support columns 10 are set in each edge of rectangular substrate 200, and the intermediate region of rectangular substrate 200 is set
Two support columns 10.
In this way, support column 10, which can be substrate 200, provides safer support.
Certainly, the quantity of support column 10 is not limited to embodiment discussed above.In dry ecthing operation, support column 10
Quantity can be replaced according to the quality and size of common substrate 200.
In some embodiments, dry ecthing equipment 100 includes bottom electrode plate 40, and more support columns 10 are liftably set
On 40 surface of bottom electrode plate,
Controller 30 is used to control support column 10 to rise so that substrate 200 lifts away from bottom electrode plate 40 when picking and placeing substrate 200
Support column 10 is controlled to decline so that substrate 200 is placed on bottom electrode plate 40 with etching process.
In embodiment of the present invention, substrate 200 is placed into rear support strut 10 on support column 10 and drives substrate 200 to decline, such as
This, increases the distance between substrate 200 and top electrode in dry ecthing equipment 100 so that dry ecthing equipment 100 can accommodate more
Process gas, and produce more plasma-baseds and the membrane material on substrate 200 be etched, improve the efficiency of dry ecthing.Substrate 200
On membrane material etching complete rear support strut 10 and drive substrate 200 to rise, substrate 200 departs from 40 surface of bottom electrode plate, in this way, convenient
Substrate 200 is taken out into dry ecthing equipment 100 without damaging bottom electrode plate 40, not only facilitates the disengaging of substrate 200, but also extend
The service life of dry ecthing equipment 100.
Specifically, lower electrode surface offers through hole, and support column 10 is arranged on bottom electrode plate 40 through through hole, support column
10 and through hole closely connect.
In this way, not only can guarantee that support column 10 can pass through the free rise and fall of through hole, but also it is avoided that in dry ecthing equipment 100
Process gas is revealed from through hole, is caused the corrosion of equipment or is threatened to health.
Further, the rise and fall of support column 10 can be completed by the drive motor for being arranged on 10 bottom of support column.
In this way, the rise and fall of support column 10 are easily achieved, and the manufacture cost of drive motor is low, and also side is replaced in maintenance
Just.
In some embodiments, controller 30 is additionally operable to detection 20 signal of pressure sensor and is detecting pressure sensing
Support column 10 is controlled to stop lifting during 20 abnormal signal of device.
In this way, being avoided that substrate 200 damages rear support strut 10 and works on, so as to damage other equipment element, extend
The service life of dry ecthing equipment 100.
Pressure sensor 20 can use piezoresistive pressure sensor.Piezoresistive pressure sensor utilizes the pressure of single crystal silicon material
Inhibition effect and integrated circuit technique are made, for substrate 200 to be applied to the pressure transition electric signal of support column 10, to monitor base
The breakage of plate 200.
Specifically, resistor stripe is integrated in monocrystalline silicon membrane on piece by piezoresistive pressure sensor using integrated technique, and silicon is made
Pressure drag chip, and encapsulation, extraction electrode lead are fixed into the periphery of silicon pressure drag chip.Piezoresistive pressure sensor directly passes through silicon
Diaphragm is experienced by measuring pressure.The one side of silicon diaphragm is the high pressure chest connected with support column 10, and another side is low with atmosphere
Press chamber.The pressure data that piezoresistive pressure sensor 20 measures is changed into electric signal and is sent to controller 30 by contact conductor.
In this way, the frequency response of pressure sensor 20 is high, it is accurate that dynamic measures, and pressure sensor 20 is small, easily
It is miniaturized in realizing, the space for taking dry ecthing equipment 100 is small.Meanwhile the high sensitivity of piezoresistive pressure sensor 20, measurement
As a result it is more accurate.Piezoresistive pressure sensor 20 does not include movable part also, and reliability is high, and slight vibrations collision does not interfere with
Measurement accuracy.
Further, amplifier can also be increased on pressure sensor 20.
In this way, the pressure energy that substrate 200 is applied on pressure sensor 20 is more accurately perceived by pressure sensor 20, base
The breakage of plate 200 is also easier to be found, and further avoid the feelings that other equipment element is damaged after substrate 200 damages
Condition.
In some embodiments, support column 10 is vertically arranged with bottom electrode plate 40.
It is arranged in this way, support column 10 can be stablized on bottom electrode plate 40, is provided for substrate 200 and stablize support, while pressure
The pressure that the substrate 200 that sensor 20 measures applies is exactly the gravity of substrate 200, is further converted without controller 30,
The burden of controller 30 is alleviated, controller 30 is reacted rapider.
In some embodiments, with 40 separated epimere of bottom electrode plate when support column 10 includes rising, epimere is using exhausted
Edge material is made.
Due to the plasma-based contact in membrane material etching process in the epimere and etching space of support column 10, using insulating materials system
Into, the plasma-based being avoided that in support column 10 and etching space reacts, so that support column 10 is highly inconsistent, substrate 200
The situation of placement can not be stablized.
Specifically, insulating materials includes ceramics.
In this way, ceramic chemical property is relatively stablized, do not react generally, do not interfered with to substrate 200 with process gas
Supporting role.It is easily manufactured meanwhile ceramics are cheap, the cost of etching and processing can be reduced.
In some embodiments, support column 10 includes the hypomere being connected with epimere, and hypomere uses stainless bracing members.
Stainless steel hardness is high, and price is low, can be that substrate 200 provides stable support and reduces production cost.
In some embodiments, dry ecthing equipment 100 includes hoistable platform, and support column 10 is arranged on hoistable platform,
Pressure sensor 20 is arranged on corresponding support column 10 and hoistable platform, and controller 30 is used to control hoistable platform lifting to rise
Descending branch dagger 10.
In this way, when substrate 200 is placed into dry ecthing equipment 100, controller 30 controls hoistable platform to rise, and makes support
Column 10, away from 40 surface of bottom electrode plate, facilitates the placement of substrate 200 with one end that substrate 200 contacts；Substrate 200 is in place
Afterwards, controller 30 controls hoistable platform to decline, and support column 10 declines therewith, and substrate 200 and the contact of 40 surface of bottom electrode plate, carry out
Etching reaction.
Specifically, hoistable platform can use fixed type lifting platform.
In this way, the stability of hoistable platform is high, support column 10 can be that substrate 200 provides relatively stable support, ensure etching
The effect of reaction.
In some embodiments, dry ecthing equipment 100 includes bottom electrode plate 40 and opposite with bottom electrode plate 40 powers on
Pole plate, venthole is offered on electric pole plate, and venthole is used to be passed through etching gas into dry ecthing equipment 100,
Controller 30 is used to detect 20 signal of pressure sensor and control venthole in 20 abnormal signal of pressure sensor
Close.
In this way, after pressure sensor 20 detects that substrate 200 damages, controller 30 stops the entrance of process gas in time,
Avoid the waste of process gas.
Specifically, process gas is usually fluoride gas, such as carbon tetrafluoride, Nitrogen trifluoride, perfluoroethane, perfluor third
Alkane and fluoroform etc..
In this way, the high directivity of etching, technology controlling and process is accurate, convenient, and etches and complete metacoxal plate 200 without degumming phenomenon,
It is not damaged and stains.
Further, the venthole on electric pole plate is covered by ceramics.
Venthole is contacted with process gas for a long time, is covered venthole using ceramics, is avoided that venthole by process gas
Corrosion, the service life of electric pole plate greatly prolong, and without often replacing, reduce production cost.Meanwhile the size of venthole is kept
It is constant, it also ensure that process gas is passed through the amount of dry ecthing equipment 100 and is effectively controlled, improve the accurate of etching result
Property.
Please refer to Fig.3, in some embodiments, dry ecthing equipment 100 includes manipulator 60, and manipulator 60 is used to carry
Substrate 200 passes in and out reaction chamber 50.
In this way, after pressure sensor 20 detects that substrate 200 is damaged, 30 control machinery hand 60 of controller stops fortune
OK, avoid the substrate 200 that manipulator 60 damages during carrying substrate 200 can read other non-damaged substrates 200 cause into
One step is damaged, and is reduced the spoilage of substrate 200, be ensure that productivity effect.Meanwhile using manipulator 60 capture substrate 200 into
Go out reaction chamber 50 to be also easy to realize automated production, improve production efficiency, and then improve production interests.
Please refer to Fig.4, in some embodiments, reaction chamber 50, dry corrosion are formed between electric pole plate and bottom electrode plate 40
Carving equipment 100 includes multiple reaction chambers 50, and multiple reaction chambers 50 are separate.
In this way, when the pressure sensor 20 in a reaction chamber 50 detects that substrate 200 is damaged, controller 30 controls
After this reaction chamber 50 is stopped, other reaction chambers 50 still can work on, and avoid a substrate 200 and be damaged dry corrosion
The problem of production capacity declines caused by carving 100 wholly off work of equipment, improves production efficiency, adds sowing for equipment.
Specifically, after process gas is passed through dry ecthing equipment 100, the work of voltage between electric pole plate and bottom electrode plate 40
Plasma-based is provoked under.
In this way, plasma-based etches the gas of generation with air-flow band to not being etched on substrate 200 by the region that photoresist covers
Walk, will not leave a trace on substrate 200, it is convenient and efficient.
In the description of the present invention, it is to be understood that term " " center ", " longitudinal direction ", " transverse direction ", " length ", " width ",
" thickness ", " on ", " under ", "front", "rear", "left", "right", " vertical ", " level ", " top ", " bottom " " interior ", " outer ", " up time
The orientation or position relationship of the instruction such as pin ", " counterclockwise ", " axial direction ", " radial direction ", " circumferential direction " be based on orientation shown in the drawings or
Position relationship, is for only for ease of and describes the present invention and simplify description, rather than indicates or imply that signified device or element must
There must be specific orientation, with specific azimuth configuration and operation, therefore be not considered as limiting the invention.
In addition, term " first ", " second " are only used for description purpose, and it is not intended that instruction or hint relative importance
Or the implicit quantity for indicating indicated technical characteristic.Thus, define " first ", the feature of " second " can be expressed or
Implicitly include one or more this feature.In the description of the present invention, " multiple " are meant that two or more, unless separately
There is clearly specific limit.
In the present invention, unless otherwise clearly defined and limited, term " installation ", " connected ", " connection ", " fixation " etc.
Term should be interpreted broadly, for example, it may be fixedly connected or be detachably connected, or integrally；Can be that machinery connects
Connect or be electrically connected；It can be directly connected, can also be indirectly connected by intermediary, can be in two elements
The connection in portion or the interaction relationship of two elements.For the ordinary skill in the art, can be according to specific feelings
Condition understands the concrete meaning of above-mentioned term in the present invention.
In the present invention, unless otherwise clearly defined and limited, fisrt feature can be with "above" or "below" second feature
It is that the first and second features directly contact, or the first and second features pass through intermediary mediate contact.Moreover, fisrt feature exists
Second feature " on ", " top " and " above " but fisrt feature are directly over second feature or oblique upper, or be merely representative of
Fisrt feature level height is higher than second feature.Fisrt feature second feature " under ", " lower section " and " below " can be
One feature is immediately below second feature or obliquely downward, or is merely representative of fisrt feature level height and is less than second feature.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means specific features, structure, material or the spy for combining the embodiment or example description
Point is contained at least one embodiment of the present invention or example.In the present specification, schematic expression of the above terms is not
It must be directed to identical embodiment or example.Moreover, particular features, structures, materials, or characteristics described can be in office
Combined in an appropriate manner in one or more embodiments or example.In addition, without conflicting with each other, the skill of this area
Art personnel can be tied the different embodiments or example described in this specification and different embodiments or exemplary feature
Close and combine.
Although the embodiment of the present invention has been shown and described above, it is to be understood that above-described embodiment is example
Property, it is impossible to limitation of the present invention is interpreted as, those of ordinary skill in the art within the scope of the invention can be to above-mentioned
Embodiment is changed, changes, replacing and modification.
Claims (12)
- A kind of 1. dry ecthing equipment, for being etched to the membrane material being disposed on the substrate, it is characterised in that the dry corrosion Carving equipment includes：The more support columns for being used to support the substrate diverse location；Multiple pressure sensors for being respectively used to sense the pressure that the substrate is applied on the corresponding support column；WithFor handling the output of the pressure sensor to judge controller that whether substrate crushes.
- 2. dry ecthing equipment as claimed in claim 1, it is characterised in that substrate described in the more support column vertical supports.
- 3. dry ecthing equipment as claimed in claim 1, it is characterised in that the substrate is rectangular, the more support columns point The edge and core of the substrate are not supported.
- 4. dry ecthing equipment as claimed in claim 1, it is characterised in that the dry ecthing equipment includes bottom electrode plate, described More support columns are liftably arranged on the bottom electrode plate surface,The controller is used to control the support column to rise so that the substrate lifts away from the lower electricity when picking and placeing the substrate Pole plate and the support column is controlled to decline in etching process so that the substrate is placed on the bottom electrode plate.
- 5. dry ecthing equipment as claimed in claim 4, it is characterised in that the controller is additionally operable to detect the pressure sensing Device signal simultaneously controls the support column to stop lifting when detecting that the pressure sensor signal is abnormal.
- 6. dry ecthing equipment as claimed in claim 4, it is characterised in that the support column is vertical with the bottom electrode plate to be set Put.
- 7. dry ecthing equipment as claimed in claim 4, it is characterised in that the support column include rise when with the bottom electrode The separated epimere of plate, the epimere, which is adopted, to be made from an insulative material.
- 8. dry ecthing equipment as claimed in claim 4, it is characterised in that the support column includes being connected down with the epimere Section, the hypomere use stainless bracing members.
- 9. dry ecthing equipment as claimed in claim 1, it is characterised in that the dry ecthing equipment includes hoistable platform, described Support column is arranged on the hoistable platform, and the pressure sensor is arranged on the corresponding support column and the hoistable platform On, the controller is used to control the hoistable platform lifting to lift the support column.
- 10. dry ecthing equipment as claimed in claim 1, the dry ecthing equipment include bottom electrode plate and with the bottom electrode plate Opposite electric pole plate, venthole is offered on the electric pole plate, and the venthole is used to lead into the dry ecthing equipment Enter etching gas,It is characterized in that, the controller is used to detect the pressure sensor signal and in pressure sensor signal exception When control the ventilation bore closure.
- 11. dry ecthing equipment as claimed in claim 11, it is characterised in that the dry ecthing equipment includes manipulator, described Manipulator is used to carry the substrate disengaging reaction chamber.
- 12. dry ecthing equipment as claimed in claim 1, it is characterised in that between the electric pole plate and the bottom electrode plate Reaction chamber is formed, the dry ecthing equipment includes multiple reaction chambers, and the multiple reaction chamber is separate.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2016/113297 WO2018119959A1 (en) | 2016-12-29 | 2016-12-29 | Dry etching apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107995994A true CN107995994A (en) | 2018-05-04 |
Family
ID=62029853
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201680042993.6A Withdrawn CN107995994A (en) | 2016-12-29 | 2016-12-29 | Dry ecthing equipment |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN107995994A (en) |
| WO (1) | WO2018119959A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110504197A (en) * | 2019-08-29 | 2019-11-26 | 上海华力微电子有限公司 | A kind of detection system, semiconductor board and the detection method of substrate breakage |
| CN110504198A (en) * | 2019-08-29 | 2019-11-26 | 上海华力微电子有限公司 | A kind of detection system, semiconductor board and the detection method of substrate breakage |
| CN111128847A (en) * | 2019-12-24 | 2020-05-08 | 北京北方华创微电子装备有限公司 | Bearing device and semiconductor processing equipment |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112802784A (en) * | 2021-02-01 | 2021-05-14 | 中环领先半导体材料有限公司 | Novel temporary storage table of silicon wafer edge removing machine |
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Also Published As
| Publication number | Publication date |
|---|---|
| WO2018119959A1 (en) | 2018-07-05 |
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Application publication date: 20180504 |