CN107994126A - The preparation method and OLED ray structures of a kind of OLED ray structures - Google Patents
The preparation method and OLED ray structures of a kind of OLED ray structures Download PDFInfo
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- CN107994126A CN107994126A CN201711226657.XA CN201711226657A CN107994126A CN 107994126 A CN107994126 A CN 107994126A CN 201711226657 A CN201711226657 A CN 201711226657A CN 107994126 A CN107994126 A CN 107994126A
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- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
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- H10K50/00—Organic light-emitting devices
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- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
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Abstract
The invention discloses the preparation method and OLED ray structures of OLED ray structures, OLED ray structures include multiple pixel regions, and pixel region includes at least the first sub-pixel area, the second sub-pixel area and the 3rd sub-pixel area, and the preparation method of OLED ray structures includes：Substrate is provided；Reflecting electrode is formed on substrate；Using atomic layer deposition method, first transparency electrode is formed in second sub-pixel area of the reflecting electrode away from substrate side, and form the first transparency electrode and second transparency electrode of lamination successively in threeth sub-pixel area of the reflecting electrode away from substrate side, so that the first sub-pixel area is emitted blue light, second sub-pixel area is emitted green light, the 3rd sub-pixel area outgoing feux rouges.The embodiment of the present invention forms the optical adjustment layer of OLED ray structures by using atomic layer deposition method, avoids optical adjustment layer from crystallizing so that the film growth of optical adjustment layer is uniform, accurately controls the thickness of optical adjustment layer, improves the excitation purity of emergent light.
Description
Technical field
The present embodiments relate to display ray structure preparation field technology, more particularly to a kind of system of OLED ray structures
Preparation Method.
Background technology
In the technology for realizing Organic Light Emitting Diode (Organic Light-Emitting Diode, OLED) colorization,
Include two kinds of mainstream technologys, i.e. microcavity effect rgb pixel independence luminescence technology and white luminescent material coordinates colored filter
Technology.
Wherein, microcavity effect rgb pixel independence luminescence technology needs to utilize microcavity effect, its principle is in red sub- picture
Different-thickness transparent conductive electrode is prepared on element, green sub-pixels and blue subpixels to realize the adjusting of rgb light chamber length, into
And realize the strong enhancing of rgb light respectively in corresponding sub-pixel area.Current common microcavity preparation method is to pass through magnetron sputtering
The method of method or pulsed laser deposition, preparation ITO (IndiumTinOxide, tin-doped indium oxide) film, which is used as, forms transparency electrode
The film of structure.
But magnetron sputtering method or pulsed laser deposition are low to the precision controllability of doping ratio, ito thin film easily crystallizes, micro-
The continuous adjustability of the thickness of the big therefore prepared ito thin film of the control difficulty of cavity length, resistivity and refractive index is poor, very
Hardly possible is applied in large-sized display devices.
The content of the invention
The present invention provides a kind of preparation method of OLED ray structures, is crystallized to avoid optical adjustment layer so that optics tune
The film growth of ganglionic layer is uniform, the accurate thickness for controlling optical adjustment layer, improves the excitation purity of emergent light.
In a first aspect, an embodiment of the present invention provides a kind of preparation method of OLED ray structures, the OLED light-emitting junctions
Structure includes multiple pixel regions, and each pixel region includes at least the first sub-pixel area, the second sub-pixel area and the 3rd sub-pixel
Area, this method include：
Substrate is provided；
Reflecting electrode is formed over the substrate；
Using atomic layer deposition method, formed in second sub-pixel area of the reflecting electrode away from the substrate side
First transparency electrode, and form lamination successively in threeth sub-pixel area of the reflecting electrode away from the substrate side
First transparency electrode and second transparency electrode so that the first sub-pixel area be emitted blue light, second sub-pixel area goes out
Green light is penetrated, the 3rd sub-pixel area is emitted feux rouges.
Further, it is described to use atomic layer deposition method, in described of the reflecting electrode away from the substrate side
Two sub-pixel areas form first transparency electrode, and in threeth sub-pixel of the reflecting electrode away from the substrate side
Area forms the first transparency electrode and second transparency electrode of lamination successively, including：
Using atomic layer deposition method, first transparency electrode layer is deposited in side of the reflecting electrode away from the substrate；
The first transparency electrode layer is patterned, first is formed in second sub-pixel area and the 3rd sub-pixel area
Transparency electrode；
Using atomic layer deposition method, in the reflecting electrode and second sub-pixel area and the 3rd sub-pixel area
First transparency electrode away from the substrate side deposition second transparency electrode layer；
The second transparency electrode layer is patterned, second transparency electrode is formed in the 3rd sub-pixel area.
Further, it is described to use atomic layer deposition method, in side deposition the of the reflecting electrode away from the substrate
One transparent electrode layer, including：
Under conditions of depositing temperature is 200 DEG C, by ZnO and In2O3According to 10：1 recycle ratio is in atomic layer deposition system
It is middle to repeat reaction 30 times, form IZO films in side of the reflecting electrode away from the substrate；
After the first transparency electrode layer is patterned, further include：
The IZO films are made annealing treatment under 250 DEG C of environment temperature.
Further, precursor source is DEZ and H used by preparing the ZnO2O, preparing the ZnO includes：
DEZ source gas bodies are passed through toward cavity, carry out chemisorbed, it is 0.4s to be passed through the time, and chamber pressure is 0.432 millitorr；
Vacuum detaches the unnecessary DEZ source gas body, and it is 8s to detach the time；
H is passed through toward cavity2O source gas bodies, carry out chemisorbed, it is 0.4s to be passed through the time；
The unnecessary H is detached using vacuum2O source gas bodies, it is 8s to detach the time；
Prepare the In2O3Used precursor source is TMIn and H2O, prepares the In2O3Including：
TMIn source gas bodies are passed through toward cavity, carry out chemisorbed, it is 0.4s to be passed through the time, and chamber pressure is 0.432 millitorr；
Vacuum detaches the unnecessary TMIn source gas body, and it is 8s to detach the time；
H is passed through toward cavity2O source gas bodies, carry out chemisorbed, it is 0.2s to be passed through the time；
Vacuum detaches the unnecessary H2O source gas bodies, it is 8s to detach the time.
Further, the thickness of the IZO films is 60nm, and resistivity is 1.2 × 10-3Ω·cm。
Further, it is described to use atomic layer deposition method, in the reflecting electrode and second sub-pixel area and institute
Side deposition second transparency electrode layer of the first transparency electrode of the 3rd sub-pixel area away from the substrate is stated, including：
Under conditions of depositing temperature is 200 DEG C, by ZnO and Al2O3According to 19：1 recycle ratio is in atomic layer deposition system
Reaction 12 times is repeated in system, first in the reflecting electrode and second sub-pixel area and the 3rd sub-pixel area is saturating
Side of the prescribed electrode away from the substrate forms AZO films.
Further, precursor source is DEZ and H used by preparing the ZnO2O, preparing the ZnO includes：
DEZ source gas bodies are passed through toward cavity, carry out chemisorbed, it is 0.25s to be passed through the time, and chamber pressure is 0.432 millitorr；
Vacuum detaches the unnecessary DEZ source gas body, and it is 10s to detach the time；
H is passed through toward cavity2O source gas bodies, carry out chemisorbed, it is 0.42s to be passed through the time；
Vacuum detaches the unnecessary H2O source gas bodies, it is 10s to detach the time；
Prepare the Al2O3Used precursor source is TMA and H2O, prepares the Al2O3Including：
TMA source gas is passed through toward cavity, carries out chemisorbed, it is 0.2s to be passed through the time, and chamber pressure is 0.432 millitorr；
Vacuum detaches the unnecessary TMA source gas, and it is 10s to detach the time；
H is passed through toward cavity2O source gas bodies, carry out chemisorbed, it is 0.2s to be passed through the time；
Vacuum detaches the unnecessary H2O source gas bodies, it is 10s to detach the time.
Further, the thickness of the AZO films is 60nm, and resistivity is 1.1 × 10-3Ω·cm。
Further, it is described to use atomic layer deposition method, in described of the reflecting electrode away from the substrate side
Two sub-pixel areas form first transparency electrode, and in threeth sub-pixel of the reflecting electrode away from the substrate side
Area forms the first transparency electrode and second transparency electrode of lamination successively, including：
Using atomic layer deposition method, first transparency electrode layer is deposited in side of the reflecting electrode away from the substrate；
Using atomic layer deposition method, the second transparent electricity is deposited in side of the first transparency electrode layer away from the substrate
Pole layer；
The second transparency electrode layer in addition to the 3rd sub-pixel area is etched away, the is formed in the 3rd sub-pixel area
Two transparency electrodes；
The first transparency electrode layer in addition to second sub-pixel area and the 3rd sub-pixel area is etched away, described
Second sub-pixel area and the 3rd sub-pixel area form first transparency electrode.
Further, it is described to use atomic layer deposition method, in side deposition the of the reflecting electrode away from the substrate
One transparent electrode layer, including：
Under conditions of depositing temperature is 80 DEG C, by ZnO and Ga2O3According to 5：1 recycle ratio is in atomic layer deposition system
Reaction 40 times is repeated, GZO films are formed in side of the reflecting electrode away from the substrate.
Precursor source is DEZ and O used by preparing the ZnO2Plasma, preparing the ZnO includes：
DEZ source gas bodies are passed through toward cavity, carry out chemisorbed, it is 0.25s to be passed through the time, and chamber pressure is 0.432 millitorr；
Vacuum detaches the unnecessary DEZ source gas body, and it is 10s to detach the time；
O is passed through toward cavity2Plasma source gas, O2Plasma power is 160W, carries out chemisorbed, it is 5s to be passed through the time；
Vacuum detaches the unnecessary O2Plasma source gas, it is 6s to detach the time；
Prepare the Ga2O3Used precursor source is TMGa and O2Plasma, prepares the Ga2O3Including：
TMGa source gas bodies are passed through toward cavity, carry out chemisorbed, it is 0.3s to be passed through the time, and chamber pressure is 0.432 millitorr；
Vacuum detaches the unnecessary TMGa source gas body, and it is 10s to detach the time；
O is passed through toward cavity2Plasma source gas, O2Plasma power is 200W, carries out chemisorbed, it is 5s to be passed through the time；
Vacuum detaches the unnecessary O2Plasma source gas, it is 7s to detach the time.
Further, the thickness of the GZO films is 60nm, and resistivity is 1.6 × 10-3Ω·cm。
Further, it is described to use atomic layer deposition method, in the side of the first transparency electrode layer away from the substrate
Second transparency electrode layer is deposited, including：
Under conditions of depositing temperature is 80 DEG C, by ZnO and MgO according to 7：3 recycle ratio is in atomic layer deposition system
Reaction 35 times is repeated, ZMO films are formed in side of the first transparency electrode layer away from the substrate.
Precursor source is DEZ and O used by preparing the ZnO2Plasma, preparing the ZnO includes：
DEZ source gas bodies are passed through toward cavity, carry out chemisorbed, it is 0.25s to be passed through the time, and chamber pressure is 0.432 millitorr；
Vacuum detaches the unnecessary DEZ source gas body, and it is 10s to detach the time；
O is passed through toward cavity2Plasma source gas, O2Plasma power is 160W, carries out chemisorbed, it is 5s to be passed through the time；
Vacuum detaches the unnecessary O2Plasma source gas, it is 6s to detach the time；
Precursor source is Mg (MeCp) used by preparing the MgO2With O2Plasma, preparing the MgO includes：
Mg (MeCp) is passed through toward cavity2Source gas body, carries out chemisorbed, and it is 0.5s to be passed through the time, chamber pressure 0.432
Millitorr；
Vacuum detaches the unnecessary Mg (MeCp)2Source gas body, it is 10s to detach the time；
O is passed through toward cavity2Plasma source gas, O2Plasma power is 180W, carries out chemisorbed, it is 5s to be passed through the time；
Vacuum detaches the unnecessary O2Plasma source gas, it is 8s to detach the time.
Further, the thickness of the ZMO films is 60nm, and resistivity is 1.8 × 10-3Ω·cm。
Further, the first transparency electrode and the etching selection ratio of the reflecting electrode are more than 10, and described second is saturating
Prescribed electrode and the etching selection ratio of the first transparency electrode are more than 10.
Further, the first transparency electrode and the second transparency electrode be AZO, IZO, IMO, ITO, GZO, TiN,
The single thin film or multi-layer laminate structure that at least one of MoN and WN material are formed.
Further, the first transparency electrode and the second transparency electrode to the refractive index of visible ray for 1.3~
3.0。
Further, using atomic layer deposition method, in described second of the reflecting electrode away from the substrate side
Sub-pixel area forms first transparency electrode, and in threeth sub-pixel area of the reflecting electrode away from the substrate side
Formed after the first transparency electrode and second transparency electrode of lamination successively, further included：
The first transparency electrode of reflecting electrode, second sub-pixel area in the first sub-pixel area and described
Side of the second transparency electrode of three sub-pixel areas away from the substrate, forms white-light emitting layer.
Second aspect, the embodiment of the present invention additionally provide a kind of OLED ray structures, and the OLED ray structures are using upper
It is prepared by the preparation method for stating the OLED ray structures described in first aspect.
The preparation method and OLED ray structures of OLED ray structures provided in an embodiment of the present invention, by using atomic layer
Sedimentation, can control the optics of first transparency electrode and second transparency electrode (optical adjustment layer) thick in monolayer rank
Degree, realizes the accurate optical adjustment layer for adjusting, forming OLED ray structures to the thickness of optical adjustment layer, avoids optics tune
Ganglionic layer crystallizes so that the film growth of optical adjustment layer is uniform, accurately controls the thickness of optical adjustment layer, improves emergent light
Excitation purity.
Brief description of the drawings
Fig. 1 is the structure diagram of OLED ray structures provided in an embodiment of the present invention；
Fig. 2 is the flow diagram of the preparation method of OLED ray structures provided in an embodiment of the present invention；
Fig. 3 is the flow diagram of the preparation method of another OLED ray structure provided in an embodiment of the present invention；
Fig. 4-Fig. 7 be the OLED ray structures of Fig. 3 preparation method in the corresponding structure diagram of each flow；
Fig. 8 is the flow diagram of the preparation method of another OLED ray structure provided in an embodiment of the present invention；
Fig. 9-Figure 13 be the OLED ray structures of Fig. 8 preparation method in the corresponding structure diagram of each flow.
Embodiment
The present invention is described in further detail with reference to the accompanying drawings and examples.It is understood that this place is retouched
The specific embodiment stated is used only for explaining the present invention, rather than limitation of the invention.It also should be noted that in order to just
It illustrate only part related to the present invention rather than entire infrastructure in description, attached drawing.
Fig. 1 is the structure diagram of OLED ray structures provided in an embodiment of the present invention, which includes more
A pixel region, each pixel region include at least the first sub-pixel area A, the second sub-pixel area B and the 3rd sub-pixel area C.The present invention
Embodiment is emission electrode suitable for anode, and anode is in the ray structure of block top emitting OLED, is readily applicable to lead
In the ray structure of dynamic light emitting diode.
The embodiment of the present invention provides a kind of preparation method of OLED ray structures, and Fig. 2 is provided in an embodiment of the present invention
The flow diagram of the preparation method of OLED ray structures.With reference to figure 1 and Fig. 2, this method includes：
Step 11, provide substrate 100.
Wherein, alternatively, substrate 100 can be glass or other flexible materials.
Step 12, form reflecting electrode 101 on the substrate 100.
Wherein, alternatively, the thickness of reflecting electrode 101 is 50~500nm, can use physical vaporous deposition or thermal evaporation
Prepared by the modes such as method, the material of reflecting electrode 101 is one kind in silver, aluminium or molybdenum, or based on silver, aluminium or molybdenum one of which
Want the alloy of component.
Step 13, using atomic layer deposition method, in second sub-pixel area B shape of the reflecting electrode 101 away from 100 side of substrate
Lamination successively is formed into first transparency electrode 102, and in threeth sub-pixel area C of the reflecting electrode 101 away from 100 side of substrate
First transparency electrode 102 and second transparency electrode 103 so that the first sub-pixel area A is emitted blue light, the second sub-pixel area B goes out
Penetrate green light, the 3rd sub-pixel area C outgoing feux rouges.
For the present embodiment using microcavity effect to realize that the first sub-pixel area A is emitted blue light, the second sub-pixel area B is emitted green light
With the technique effect of the 3rd sub-pixel area C outgoing feux rouges.According to the chamber length and visible light wave of the principle of microcavity effect, only microcavity
Length meets some requirements, and microcavity effect can just be realized.General method for manufacturing thin film, such as magnetron sputtering method etc., due to
It cannot accurately adjust the thickness of grown film, thus the first transparency electrode 102 and second transparency electrode formed
103, its thickness can not meet the needs of accurately adjusting microcavity optical cavity length.And atomic layer deposition method be one kind can be by material
It is plated in the method for substrate surface layer by layer with monatomic form membrane, can be realized in the aspect of individual layer atom thick to film
The accurate control of degree, the transparent electrode material prepared, its thickness are easily met the needs for realizing microcavity effect.Therefore, originally
Inventive embodiments prepare first transparency electrode 102 and second transparency electrode 103 using atomic layer deposition method, and optics can be adjusted
The progress of the thickness of layer is accurately adjusted.
It should be noted that, although each step is described as the processing of order by the flow chart of the embodiment of the present invention, but its
In many steps can adjust as needed its execution order.
The method provided in an embodiment of the present invention for preparing OLED ray structures, by using atomic layer deposition method, Ke Yi
Monolayer rank controls the optical thickness of first transparency electrode and second transparency electrode (optical adjustment layer), realizes to optics
The accurate adjusting of the thickness of regulating course, forms the optical adjustment layer of OLED ray structures, avoids optical adjustment layer from crystallizing so that light
It is uniform to learn the film growth of regulating course, accurately controls the thickness of optical adjustment layer, improves the excitation purity of emergent light.
Alternatively, using atomic layer deposition method, in second sub-pixel area B of the reflecting electrode 101 away from 100 side of substrate
First transparency electrode 102 is formed, and is formed in threeth sub-pixel area C of the reflecting electrode 101 away from 100 side of substrate and folded successively
After the first transparency electrode 102 and second transparency electrode 103 of layer, further include：
Of first transparency electrode 102 and the 3rd of reflecting electrode 101, the second sub-pixel area B in the first sub-pixel area A
Side of the second transparency electrode 103 of pixel region C away from substrate 100, forms luminescent layer.
Exemplarily, luminescent layer can be organic luminous layer or inorganic light emitting layers；The first sub-pixel area A, the second sub-pixel
Area B, the luminescent layer of the 3rd sub-pixel area C can fill the luminescent material of corresponding color, so that difference in OLED ray structures
Pixel region directly sends the light of corresponding color, then by microcavity effect, further filters out veiling glare that may be present, further improve
The excitation purity of emergent light.Furthermore it is also possible to reflecting electrode 101 in the first sub-pixel area A, the first of the second sub-pixel area B saturating
Side of the second transparency electrode 103 away from substrate 100 of 102 and the 3rd sub-pixel area C of prescribed electrode, forms white-light emitting layer,
At this time, by microcavity effect, the first sub-pixel area A can be made to be emitted blue light, the second sub-pixel area B outgoing green lights, the 3rd sub-pixel
Area C is emitted feux rouges.
In the present embodiment, first transparency electrode 102 and second transparency electrode 103 can be AZO, IZO, IMO, ITO, GZO,
The single thin film or multi-layer laminate structure that at least one of the materials such as TiN, MoN and WN material is formed.Wherein, multilayer laminated knot
Structure can include above-mentioned same material, or the different layers of multi-layer laminate structure correspond to different materials.
Optionally, Fig. 3 is the flow signal of the preparation method of another OLED ray structure provided in an embodiment of the present invention
Figure, Fig. 4-Fig. 7 be the OLED ray structures of Fig. 3 preparation method in the corresponding structure diagram of each flow.Based on above-mentioned technology
Step is used atomic layer deposition method by scheme, the present embodiment, in second sub-pixel of the reflecting electrode 101 away from 100 side of substrate
Area B forms first transparency electrode 101, and threeth sub-pixel area C of the reflecting electrode 101 away from 100 side of substrate formed according to
The first transparency electrode 102 and second transparency electrode 103 of secondary lamination are optimized for：
Step 21, referring to Fig. 4, there is provided substrate 100.
Step 22, referring to Fig. 4, form reflecting electrode 101 on the substrate 100.
Step 23, referring to Fig. 5, using atomic layer deposition method, in side deposition of the reflecting electrode 101 away from substrate 100 the
One transparent electrode layer 112.
Exemplarily, the material of first transparency electrode layer 112 is IZO.Specifically, step 23 may include：
Under conditions of depositing temperature is 200 DEG C, by ZnO and In2O3According to 10：1 recycle ratio is in atomic layer deposition system
It is middle to repeat reaction 30 times, form IZO films in side of the reflecting electrode 101 away from substrate 100.
Optionally, after first transparency electrode layer 112 is patterned, further include：To IZO under 250 DEG C of environment temperature
Film is made annealing treatment.
Annealing can further improve the physical arrangement of IZO films, crystal property be improved, so that it is thin to improve IZO
The anti-etching characteristic of film, is conducive to avoid IZO film layers from being etched during later stage patterned process.
In such scheme, precursor source is DEZ and H used by preparing ZnO2O, preparing ZnO includes：It is passed through toward cavity
DEZ source gas bodies, carry out chemisorbed, it is 0.4s to be passed through the time, and chamber pressure is 0.432 millitorr；Vacuum detaches unnecessary DEZ sources
Gas, it is 8s to detach the time；H is passed through toward cavity2O source gas bodies, carry out chemisorbed, it is 0.4s to be passed through the time；Taken out using vacuum
From unnecessary H2O source gas bodies, it is 8s to detach the time.
Prepare In2O3Used precursor source is TMIn and H2O, prepares In2O3Including：TMIn source gas is passed through toward cavity
Body, carries out chemisorbed, it is 0.4s to be passed through the time, and chamber pressure is 0.432 millitorr；Vacuum detaches unnecessary TMIn source gas bodies,
It is 8s to detach the time；H is passed through toward cavity2O source gas bodies, carry out chemisorbed, it is 0.2s to be passed through the time；Vacuum detaches unnecessary H2O
Source gas body, it is 8s to detach the time.
Thus the thickness of the IZO films prepared is 60nm, and resistivity is 1.2 × 10-3Ω·cm.It should be noted that this
The thickness of IZO films in inventive embodiments is not limited in 60nm, and according to the difference of technological parameter, the thickness of IZO films can
Think 10nm~100nm.
Atomic layer deposition method can accurately control ZnO and In2O3Time of circulation time ratio and repetition reaction in preparation process
Number, doping ratio and concentration of the control loop than that can control two kinds of elements in first transparency electrode layer 112, control repeat to react
Number can accurately control the thickness of first transparency electrode layer 112, so as to fulfill 112 resistivity of first transparency electrode layer and folding
Penetrate the continuously adjustable of rate.
Step 24, referring to Fig. 6, patterning first transparency electrode layer 112, in the second sub-pixel area B and the 3rd sub-pixel area C
Form first transparency electrode 102.
Wherein, alternatively, when forming first transparency electrode 102, photoetching process can be used to the first transparency conducting layer
112 carry out patterned process.
Step 25, referring to Fig. 7, using atomic layer deposition method, in reflecting electrode and the second sub-pixel area and the 3rd sub- picture
Side deposition second transparency electrode floor of the first transparency electrode in plain area away from substrate.
Exemplarily, the material of second transparency electrode layer 113 is AZO.Specifically, step 25 may include：
Under conditions of depositing temperature is 200 DEG C, by ZnO and Al2O3According to 19：1 recycle ratio is in atomic layer deposition system
Reaction 12 times is repeated in system, in the first transparency electrode of reflecting electrode 101 and second sub-pixel area B and the 3rd sub-pixel area C
101 sides away from substrate 100 form AZO films.
Precursor source is DEZ and H used by preparing ZnO2O, preparing ZnO includes：DEZ source gas bodies are passed through toward cavity, into
Row chemisorbed, it is 0.25s to be passed through the time, and chamber pressure is 0.432 millitorr；Vacuum detaches unnecessary DEZ source gas bodies, when detaching
Between be 10s；H is passed through toward cavity2O source gas bodies, carry out chemisorbed, it is 0.42s to be passed through the time；Vacuum detaches unnecessary H2O source gas
Body, it is 10s to detach the time.
Prepare Al2O3Used precursor source is TMA and H2O, prepares Al2O3Including：TMA source gas is passed through toward cavity,
Chemisorbed is carried out, it is 0.2s to be passed through the time, and chamber pressure is 0.432 millitorr；Vacuum detaches unnecessary TMA source gas, detaches
Time is 10s；H is passed through toward cavity2O source gas bodies, carry out chemisorbed, it is 0.2s to be passed through the time；Vacuum detaches unnecessary H2O sources
Gas, it is 10s to detach the time.
Thus the thickness of the AZO films prepared is 60nm, and resistivity is 1.1 × 10-3Ω·cm.Alternatively, AZO films
Thickness can also be 10nm~100nm.It should be noted that the thickness of the AZO films in the embodiment of the present invention is not limited in
60nm, according to the difference of technological parameter, the thickness of AZO films can be 10nm~100nm.
Step 26, referring to Fig. 1, pattern second transparency electrode layer, second transparency electrode formed in the 3rd sub-pixel area.
Wherein, alternatively, when forming second transparency electrode 103, dilute hydrochloric acid can be used to second transparency electrode layer
113 carry out patterned process, while first transparency electrode 102 and reflecting electrode 101 can be avoided not to be damaged.
Fig. 8 be another OLED ray structure provided in an embodiment of the present invention preparation method flow diagram, Fig. 9-
Figure 13 be the OLED ray structures of Fig. 8 preparation method in the corresponding structure diagram of each flow.Alternatively, can also will be anti-
Second sub-pixel area B of the radio pole 101 away from 100 side of substrate forms first transparency electrode 102, and in reflecting electrode 101
The 3rd sub-pixel area C away from 100 side of substrate forms the first transparency electrode 102 and second transparency electrode 103 of lamination successively
It is optimized for：
Step 31, with reference to figure 9, there is provided substrate 100.
Step 32, with reference to figure 9, reflection electrode layer 211 is formed on substrate.
Wherein, the method that reflection electrode layer is formed in Fig. 4 can be used by forming the process of reflection electrode layer 211, can also
Using other methods, it is not construed as limiting herein.
Step 33, with reference to figure 10, using atomic layer deposition method, in side deposition of the reflection electrode layer 211 away from substrate 100
First transparency electrode layer 212.
Exemplarily, the material of first transparency electrode layer 212 is GZO.Specifically, step 33 may include：
Under conditions of depositing temperature is 80 DEG C, by ZnO and Ga2O3According to 5：1 recycle ratio is in atomic layer deposition system
Reaction 40 times is repeated, GZO films are formed in side of the reflecting electrode 211 away from substrate 100.
Precursor source is DEZ and O used by preparing ZnO2Plasma, preparing ZnO includes：DEZ source gas is passed through toward cavity
Body, carries out chemisorbed, it is 0.25s to be passed through the time, and chamber pressure is 0.432 millitorr；Vacuum detaches unnecessary DEZ source gas bodies,
It is 10s to detach the time；O is passed through toward cavity2Plasma source gas, O2Plasma power is 160W, chemisorbed is carried out, when being passed through
Between be 5s；Vacuum detaches unnecessary O2Plasma source gas, it is 6s to detach the time.
Prepare Ga2O3Used precursor source is TMGa and O2Plasma, prepares Ga2O3Including：TMGa is passed through toward cavity
Source gas body, carries out chemisorbed, it is 0.3s to be passed through the time, and chamber pressure is 0.432 millitorr；Vacuum detaches unnecessary TMGa source gas
Body, it is 10s to detach the time；O is passed through toward cavity2Plasma source gas, O2Plasma power is 200W, carries out chemisorbed, is passed through
Time is 5s；Vacuum detaches unnecessary O2Plasma source gas, it is 7s to detach the time.
Thus the thickness of the GZO films prepared is 60nm, and resistivity is 1.6 × 10-3Ω·cm.Alternatively, GZO films
Thickness can also be 10nm~100nm.It should be noted that the thickness of the GZO films in the embodiment of the present invention is not limited in
60nm, according to the difference of technological parameter, the thickness of GZO films can be 10nm~100nm.
Step 34, with reference to figure 11, using atomic layer deposition method, in side of the first transparency electrode layer 212 away from substrate 100
Deposit second transparency electrode layer 213.
Exemplarily, the material of second transparency electrode layer 213 is GZO.Specifically, step 34 may include：
Under conditions of depositing temperature is 80 DEG C, by ZnO and MgO according to 7：3 recycle ratio is in atomic layer deposition system
Reaction 35 times is repeated, ZMO films are formed in side of the first transparency electrode layer 212 away from substrate 100.
Precursor source is DEZ and O used by preparing ZnO2Plasma, preparing ZnO includes：DEZ source gas is passed through toward cavity
Body, carries out chemisorbed, it is 0.25s to be passed through the time, and chamber pressure is 0.432 millitorr；Vacuum detaches unnecessary DEZ source gas bodies,
It is 10s to detach the time；O is passed through toward cavity2Plasma source gas, O2Plasma power is 160W, chemisorbed is carried out, when being passed through
Between be 5s；Vacuum detaches unnecessary O2Plasma source gas, it is 6s to detach the time.
Precursor source is Mg (MeCp) used by preparing MgO2With O2Plasma, preparing MgO includes：Mg is passed through toward cavity
(MeCp)2Source gas body, carries out chemisorbed, it is 0.5s to be passed through the time, and chamber pressure is 0.432 millitorr；Vacuum detaches unnecessary
Mg(MeCp)2Source gas body, it is 10s to detach the time；O is passed through toward cavity2Plasma source gas, O2Plasma power is 180W, is carried out
Chemisorbed, it is 5s to be passed through the time.
Thus the thickness of the ZMO films prepared is 60nm, and resistivity is 1.8 × 10-3Ω·cm.Alternatively, ZMO films
Thickness can also be 10nm~100nm.It should be noted that the thickness of the ZMO films in the embodiment of the present invention is not limited in
60nm, according to the difference of technological parameter, the thickness of ZMO films can be 10nm~100nm.
Step 35, with reference to figure 12, the second transparency electrode layer 213 in addition to the 3rd sub-pixel area C is etched away, in the 3rd son
Pixel region C forms second transparency electrode 103.
Wherein, alternatively, when the 3rd sub-pixel area C forms second transparency electrode 103, can be etched away using dilute formic acid
Second transparency electrode layer 203 in addition to the 3rd sub-pixel area C, forms structure as shown in figure 12.
Step 36, with reference to figure 13, the first transparent electricity in addition to the second sub-pixel area B and the 3rd sub-pixel area C is etched away
Pole layer 212, first transparency electrode 102 is formed in the second sub-pixel area B and the 3rd sub-pixel area C.
Wherein, alternatively, can be with when the second sub-pixel area B and the 3rd sub-pixel area C form first transparency electrode 102
The first transparency electrode layer 212 in addition to the second sub-pixel area B and the 3rd sub-pixel area C, shape are etched using diluted KOH solution
Into structure as shown in fig. 13 that.
Step 37, with reference to figure 1, etch away in addition to the first sub-pixel area, the second sub-pixel area B and the 3rd sub-pixel area C
Reflection electrode layer 211, the first sub-pixel area A, the second sub-pixel area B and the 3rd sub-pixel area C formed reflecting electrode 101.
Wherein, alternatively, when etching reflection electrode layer 211, if reflection electrode layer 211 is molybdenum, can use
H3PO4、HNO3With the mixing acid etch reflection electrode layer 211 of glacial acetic acid；Alternatively, SF can also be selected6It is right as etching gas
Reflection electrode layer 211 carries out dry etching, forms reflecting electrode 101 as shown in fig. 13 that.Alternatively, photoetching process can also be passed through
Obtain reflecting electrode 101.
Alternatively, in above-described embodiment, the etching selection ratio of first transparency electrode 102 and reflecting electrode 101 is more than 10, the
The etching selection ratio of two transparency electrodes 103 and first transparency electrode 102 is more than 10.Thus, in etching first transparency electrode 102
When, it can prevent reflecting electrode 101 from crossing to carve, when etching second transparency electrode 103, can prevent first transparency electrode 102 from crossing to carve.
First transparency electrode 102 and second transparency electrode 103 are 1.3~3.0 to the refractive index of visible ray.Of the invention real
Apply in example, refractive index is mainly influenced be subject to concentration relationship between the component material and each component of electrode, the thickness doubling of electrode
Rate is penetrated also to have a certain impact, by adjusting the component of first transparency electrode 22 and second transparency electrode 23, can adjust this two
Refractive index of a transparency electrode in visible-range.
Alternatively, the material of first transparency electrode 102 can also be TiN.At this time, the mistake of first transparency electrode 102 is formed
Journey may particularly include：
Depositing temperature be 150~180 DEG C under conditions of, using plasma strengthen technique for atomic layer deposition, to TiN into
550 cyclic depositions of row, form TiAlN thin film.
Precursor source is four dimethylamino titaniums (TDMATi) and NH used by preparing TiN3,.Preparing TiN includes：Toward chamber
Body TDMATi source gas bodies, carry out chemisorbed, and it is 0.3s to be passed through the time, chamber pressure is 0.432 millitorr；Vacuum detaches unnecessary
TDMATi source gas bodies, it is 20s to detach the time；Toward cavity NH3Plasma source gas, NH3Plasma power is 100W, is carried out
Chemisorbed, it is 8s to be passed through the time；Vacuum detaches unnecessary NH3Plasma source gas, it is 5s to detach the time.
Thus the thickness of the TiAlN thin film prepared is 60nm, and resistivity is 8 × 10-4Ω.cm.Alternatively, the thickness of TiAlN thin film
Degree can also be 10nm~100nm.It should be noted that the thickness of the TiAlN thin film in the embodiment of the present invention is not limited in
60nm, according to the difference of technological parameter, the thickness of TiAlN thin film can be 10nm~100nm.
The embodiment of the present invention also provides a kind of OLED ray structures, which uses institute in the embodiment of the present invention
Prepared by the preparation method of the OLED ray structures of offer, the description of concrete structure refers to above-described embodiment and Fig. 1, herein not
Repeat again.
Preparation OLED ray structures provided in an embodiment of the present invention, can be in unimolecule by using atomic layer deposition method
Level does not adjust the optical thickness of first transparency electrode and second transparency electrode (optical adjustment layer), realizes to optical adjustment layer
Thickness accurate control, transparency electrode realizes splendid uniformity in large scale, can be used in producing large-sized complete
Colorful display screen.Also, atomic layer deposition method can also accurately be adjusted the component and thickness of the transparency electrode of preparation, be made
Two kinds of transparency electrodes thickness and refractive index etc. all there is continuous adjustability.
Note that it above are only presently preferred embodiments of the present invention and institute's application technology principle.It will be appreciated by those skilled in the art that
The invention is not restricted to specific embodiment described here, can carry out for a person skilled in the art various obvious changes,
Readjust and substitute without departing from protection scope of the present invention.Therefore, although being carried out by above example to the present invention
It is described in further detail, but the present invention is not limited only to above example, without departing from the inventive concept, also
It can include other more equivalent embodiments, and the scope of the present invention is determined by scope of the appended claims.
Claims (20)
1. a kind of preparation method of OLED ray structures, the OLED ray structures include multiple pixel regions, each pixel
Area includes at least the first sub-pixel area, the second sub-pixel area and the 3rd sub-pixel area, it is characterised in that including：
Substrate is provided；
Reflecting electrode is formed over the substrate；
Using atomic layer deposition method, first is formed in second sub-pixel area of the reflecting electrode away from the substrate side
Transparency electrode, and form in threeth sub-pixel area of the reflecting electrode away from the substrate side the of lamination successively
One transparency electrode and second transparency electrode, so that the first sub-pixel area is emitted blue light, the second sub-pixel area outgoing is green
Light, the 3rd sub-pixel area are emitted feux rouges.
2. the preparation method of OLED ray structures according to claim 1, it is characterised in that described to use atomic layer deposition
Method, first transparency electrode is formed in second sub-pixel area of the reflecting electrode away from the substrate side, and in institute
State threeth sub-pixel area of the reflecting electrode away from the substrate side and form the first transparency electrode of lamination and second successively
Transparency electrode, including：
Using atomic layer deposition method, first transparency electrode layer is deposited in side of the reflecting electrode away from the substrate；
The first transparency electrode layer is patterned, it is transparent to form first in second sub-pixel area and the 3rd sub-pixel area
Electrode；
Using atomic layer deposition method, in the reflecting electrode and second sub-pixel area and the 3rd sub-pixel area
Side deposition second transparency electrode layer of one transparency electrode away from the substrate；
The second transparency electrode layer is patterned, second transparency electrode is formed in the 3rd sub-pixel area.
3. the preparation method of OLED ray structures according to claim 2, it is characterised in that described to use atomic layer deposition
Method, first transparency electrode layer is deposited in side of the reflecting electrode away from the substrate, including：
Under conditions of depositing temperature is 200 DEG C, by ZnO and In2O3According to 10：1 recycle ratio weight in atomic layer deposition system
React 30 times again, IZO films are formed in side of the reflecting electrode away from the substrate；
After the first transparency electrode layer is patterned, further include：
The IZO films are made annealing treatment under 250 DEG C of environment temperature.
4. the preparation method of OLED ray structures according to claim 3, it is characterised in that prepare the ZnO and used
Precursor source be DEZ and H2O, preparing the ZnO includes：
DEZ source gas bodies are passed through toward cavity, carry out chemisorbed, it is 0.4s to be passed through the time, and chamber pressure is 0.432 millitorr；
Vacuum detaches the unnecessary DEZ source gas body, and it is 8s to detach the time；
H is passed through toward cavity2O source gas bodies, carry out chemisorbed, it is 0.4s to be passed through the time；
The unnecessary H is detached using vacuum2O source gas bodies, it is 8s to detach the time；
Prepare the In2O3Used precursor source is TMIn and H2O, prepares the In2O3Including：
TMIn source gas bodies are passed through toward cavity, carry out chemisorbed, it is 0.4s to be passed through the time, and chamber pressure is 0.432 millitorr；
Vacuum detaches the unnecessary TMIn source gas body, and it is 8s to detach the time；
H is passed through toward cavity2O source gas bodies, carry out chemisorbed, it is 0.2s to be passed through the time；
Vacuum detaches the unnecessary H2O source gas bodies, it is 8s to detach the time.
5. the preparation method of OLED ray structures according to claim 3, it is characterised in that the thickness of the IZO films
For 60nm, resistivity is 1.2 × 10-3Ω·cm。
6. the preparation method of OLED ray structures according to claim 2, it is characterised in that described to use atomic layer deposition
Method, in the reflecting electrode and the first transparency electrode of second sub-pixel area and the 3rd sub-pixel area away from described
The side deposition second transparency electrode layer of substrate, including：
Under conditions of depositing temperature is 200 DEG C, by ZnO and Al2O3According to 19：1 recycle ratio is in atomic layer deposition system
Reaction 12 times is repeated, in the reflecting electrode and the first transparent electricity of second sub-pixel area and the 3rd sub-pixel area
Side extremely away from the substrate forms AZO films.
7. the preparation method of OLED ray structures according to claim 6, it is characterised in that prepare the ZnO and used
Precursor source be DEZ and H2O, preparing the ZnO includes：
DEZ source gas bodies are passed through toward cavity, carry out chemisorbed, it is 0.25s to be passed through the time, and chamber pressure is 0.432 millitorr；
Vacuum detaches the unnecessary DEZ source gas body, and it is 10s to detach the time；
H is passed through toward cavity2O source gas bodies, carry out chemisorbed, it is 0.42s to be passed through the time；
Vacuum detaches the unnecessary H2O source gas bodies, it is 10s to detach the time；
Prepare the Al2O3Used precursor source is TMA and H2O, prepares the Al2O3Including：
TMA source gas is passed through toward cavity, carries out chemisorbed, it is 0.2s to be passed through the time, and chamber pressure is 0.432 millitorr；
Vacuum detaches the unnecessary TMA source gas, and it is 10s to detach the time；
H is passed through toward cavity2O source gas bodies, carry out chemisorbed, it is 0.2s to be passed through the time；
Vacuum detaches the unnecessary H2O source gas bodies, it is 10s to detach the time.
8. the preparation method of OLED ray structures according to claim 6, it is characterised in that the thickness of the AZO films
For 60nm, resistivity is 1.1 × 10-3Ω·cm。
9. the preparation method of OLED ray structures according to claim 1, it is characterised in that described to use atomic layer deposition
Method, first transparency electrode is formed in second sub-pixel area of the reflecting electrode away from the substrate side, and in institute
State threeth sub-pixel area of the reflecting electrode away from the substrate side and form the first transparency electrode of lamination and second successively
Transparency electrode, including：
Using atomic layer deposition method, first transparency electrode layer is deposited in side of the reflecting electrode away from the substrate；
Using atomic layer deposition method, second transparency electrode is deposited in side of the first transparency electrode layer away from the substrate
Layer；
The second transparency electrode layer in addition to the 3rd sub-pixel area is etched away, it is saturating to form second in the 3rd sub-pixel area
Prescribed electrode；
The first transparency electrode layer in addition to second sub-pixel area and the 3rd sub-pixel area is etched away, described second
Sub-pixel area and the 3rd sub-pixel area form first transparency electrode.
10. the preparation method of OLED ray structures according to claim 9, it is characterised in that described to use atomic layer deposition
Area method, first transparency electrode layer is deposited in side of the reflecting electrode away from the substrate, including：
Under conditions of depositing temperature is 80 DEG C, by ZnO and Ga2O3According to 5：1 recycle ratio repeats in atomic layer deposition system
Reaction 40 times, GZO films are formed in side of the reflecting electrode away from the substrate.
11. the preparation method of OLED ray structures according to claim 10, it is characterised in that prepare the ZnO and adopted
Precursor source is DEZ and O2Plasma, preparing the ZnO includes：
DEZ source gas bodies are passed through toward cavity, carry out chemisorbed, it is 0.25s to be passed through the time, and chamber pressure is 0.432 millitorr；
Vacuum detaches the unnecessary DEZ source gas body, and it is 10s to detach the time；
O is passed through toward cavity2Plasma source gas, O2Plasma power is 160W, carries out chemisorbed, it is 5s to be passed through the time；
Vacuum detaches the unnecessary O2Plasma source gas, it is 6s to detach the time；
Prepare the Ga2O3Used precursor source is TMGa and O2Plasma, prepares the Ga2O3Including：
TMGa source gas bodies are passed through toward cavity, carry out chemisorbed, it is 0.3s to be passed through the time, and chamber pressure is 0.432 millitorr；
Vacuum detaches the unnecessary TMGa source gas body, and it is 10s to detach the time；
O is passed through toward cavity2Plasma source gas, O2Plasma power is 200W, carries out chemisorbed, it is 5s to be passed through the time；
Vacuum detaches the unnecessary O2Plasma source gas, it is 7s to detach the time.
12. the preparation method of OLED ray structures according to claim 10, it is characterised in that the thickness of the GZO films
It is 1.6 × 10 to spend for 60nm, resistivity-3Ω·cm。
13. the preparation method of OLED ray structures according to claim 9, it is characterised in that described to use atomic layer deposition
Area method, second transparency electrode layer is deposited in side of the first transparency electrode layer away from the substrate, including：
Under conditions of depositing temperature is 80 DEG C, by ZnO and MgO according to 7：3 recycle ratio repeats in atomic layer deposition system
Reaction 35 times, ZMO films are formed in side of the first transparency electrode layer away from the substrate.
14. the preparation method of OLED ray structures according to claim 13, it is characterised in that prepare the ZnO and adopted
Precursor source is DEZ and O2Plasma, preparing the ZnO includes：
DEZ source gas bodies are passed through toward cavity, carry out chemisorbed, it is 0.25s to be passed through the time, and chamber pressure is 0.432 millitorr；
Vacuum detaches the unnecessary DEZ source gas body, and it is 10s to detach the time；
O is passed through toward cavity2Plasma source gas, O2Plasma power is 160W, carries out chemisorbed, it is 5s to be passed through the time；
Vacuum detaches the unnecessary O2Plasma source gas, it is 6s to detach the time；
Precursor source is Mg (MeCp) used by preparing the MgO2With O2Plasma, preparing the MgO includes：
Mg (MeCp) is passed through toward cavity2Source gas body, carries out chemisorbed, it is 0.5s to be passed through the time, and chamber pressure is 0.432 millitorr；
Vacuum detaches the unnecessary Mg (MeCp)2Source gas body, it is 10s to detach the time；
O is passed through toward cavity2Plasma source gas, O2Plasma power is 180W, carries out chemisorbed, it is 5s to be passed through the time；
Vacuum detaches the unnecessary O2Plasma source gas, it is 8s to detach the time.
15. the preparation method of OLED ray structures according to claim 13, it is characterised in that the thickness of the ZMO films
It is 1.8 × 10 to spend for 60nm, resistivity-3Ω·cm。
16. the preparation method of OLED ray structures according to claim 9, it is characterised in that the first transparency electrode
It is more than 10 with the etching selection ratio of the reflecting electrode, the etching selection of the second transparency electrode and the first transparency electrode
Than more than 10.
17. the preparation method of OLED ray structures according to claim 1, it is characterised in that the first transparency electrode
And/or the second transparency electrode is the formation of at least one of AZO, IZO, IMO, ITO, GZO, TiN, MoN and WN material
Single thin film or multi-layer laminate structure.
18. the preparation method of OLED ray structures according to claim 1, it is characterised in that the first transparency electrode
It is 1.3~3.0 to the refractive index of visible ray with the second transparency electrode.
19. the preparation method of OLED ray structures according to claim 1, it is characterised in that using atomic layer deposition
Method, first transparency electrode is formed in second sub-pixel area of the reflecting electrode away from the substrate side, and in institute
State threeth sub-pixel area of the reflecting electrode away from the substrate side and form the first transparency electrode of lamination and second successively
After transparency electrode, further include：
The first transparency electrode of reflecting electrode, second sub-pixel area in the first sub-pixel area and the 3rd son
Side of the second transparency electrode of pixel region away from the substrate, forms white-light emitting layer.
20. a kind of OLED ray structures, it is characterised in that the OLED ray structures are using described in claim any one of 1-19
OLED ray structures preparation method prepare.
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