CN107994088A - 一种薄膜太阳能电池 - Google Patents

一种薄膜太阳能电池 Download PDF

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CN107994088A
CN107994088A CN201711280369.2A CN201711280369A CN107994088A CN 107994088 A CN107994088 A CN 107994088A CN 201711280369 A CN201711280369 A CN 201711280369A CN 107994088 A CN107994088 A CN 107994088A
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conductive layer
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高崇民
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TIANJIN YINGHE NEW ENERGY TECHNOLOGY DEVELOPMENT Co Ltd
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TIANJIN YINGHE NEW ENERGY TECHNOLOGY DEVELOPMENT Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/0445PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/052Cooling means directly associated or integrated with the PV cell, e.g. integrated Peltier elements for active cooling or heat sinks directly associated with the PV cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/0547Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/52PV systems with concentrators

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Abstract

本发明公开了一种薄膜太阳能电池,包括设有散热层的散热基板,所述散热基板上设有导电层、光伏材料层和柔性承载层,所述导电层包括第一导电层、中间导电层、第二导电层,所述第一导电层覆盖于所述光伏材料层的上方,所述中间导电层位于所述光伏材料层的下方,所述散热基板位于所述中间导电层和所述柔性承载层之间,最下层为所述第二导电层,所述第一导电层、中间导电层、第二导电层均为石墨烯材料,所述第一导电层外部设有保护层,所述保护层两侧还设有保护层压件。本发明的目的是提供一种光电转化效率高、散热效果好的薄膜太阳能电池。

Description

一种薄膜太阳能电池
技术领域
本发明涉及太阳能电池技术领域,尤其涉及一种薄膜太阳能电池。
背景技术
太阳薄膜电池有质量小、厚度极薄、可弯曲等优点。当前工业化制作太阳能薄膜电池的材料主要有:碲化镉、铜铟镓硒、非晶体硅、砷化镓等。太阳能电池市场上主流的是晶体硅太阳能电池和薄膜太阳能电池,两者各具优劣,晶体硅太阳能电池工艺成熟,光电转换效率相对较高,但材料消耗和电池成本很高;薄膜太阳能电池制备在廉价的衬底上,材料消耗和电池成本很低,但光电转化效率还有待提高,太阳光被太阳能电池吸收后,一部分经光电转换变成电能,另外一部分转换成热能使太阳能电池发热而温度升高,使发电效率低。
发明内容
针对上述问题,本发明的目的是提供一种光电转化效率高、散热效果好的薄膜太阳能电池。
本发明解决上述技术问题所采用的技术方案是:一种薄膜太阳能电池,包括设有散热层的散热基板,所述散热基板上设有导电层、光伏材料层和柔性承载层,所述导电层包括第一导电层、中间导电层、第二导电层,所述第一导电层覆盖于所述光伏材料层的上方,所述中间导电层位于所述光伏材料层的下方,所述散热基板位于所述中间导电层和所述柔性承载层之间,最下层为所述第二导电层,所述第一导电层、中间导电层、第二导电层均为石墨烯材料,所述第一导电层外部设有保护层,所述保护层两侧还设有保护层压件。
进一步的,所述第一导电层和所述光伏材料层之间设有硫化镉缓冲层。
进一步的,所述中间导电层和所述光伏材料层之间设有硫化镉缓冲层。
进一步的,所述柔性承载层和所述中间导电层之间设有硫化镉缓冲层。
进一步的,所述第二导电层外部设有Ag反射层。
本发明的优点在于:
本发明通过设置导电层、光伏材料层和柔性承载层,太阳光照射在吸收层上后,被反复反射并吸收,从而提高光电转化率和发电效率;通过设置散热基板可使电池内部散热效果好。
附图说明
为了更清楚地说明本发明具体实施方式或现有技术中的技术方案,下面将对具体实施方式或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图是本发明的一些实施方式,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为本发明的结构示意图。
1、散热基板 2、第一导电层 3、光伏材料层
4、中间导电层 5、柔性承载层 6、第二导电层
7、保护层 8、保护层压件 9、Ag反射层
其中:
具体实施方式
下面将结合附图对本发明的技术方案进行清楚、完整地描述,显然,所描述的实施例是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
在本发明的描述中,需要说明的是,术语“中心”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本发明和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本发明的限制。此外,术语“第一”、“第二”、“第三”仅用于描述目的,而不能理解为指示或暗示相对重要性。
如图1所示的一种薄膜太阳能电池,包括设有散热层的散热基板1,所述散热基板1上设有导电层、光伏材料层3和柔性承载层5,所述导电层包括第一导电层2、中间导电层4、第二导电层6,所述第一导电层2覆盖于所述光伏材料层3的上方,所述中间导电层4位于所述光伏材料层3的下方,所述散热基板1位于所述中间导电层4和所述柔性承载层5之间,最下层为所述第二导电层6,所述第一导电层2、中间导电层4、第二导电层6均为石墨烯材料,所述第一导电层外部设有保护层7,所述保护层两侧还设有保护层压件7。
进一步的,所述第一导电层2和所述光伏材料层2之间设有硫化镉缓冲层。
进一步的,所述中间导电层4和所述光伏材料层3之间设有硫化镉缓冲层。
进一步的,所述柔性承载层5和所述中间导电层4之间设有硫化镉缓冲层。
进一步的,所述第二导电层6外部设有Ag反射层9。
本发明通过设置导电层、光伏材料层和柔性承载层,太阳光照射在吸收层上后,被反复反射并吸收,从而提高光电转化率和发电效率;通过设置散热基板可使电池内部散热效果好。
最后应说明的是:以上各实施例仅用以说明本发明的技术方案,而非对其限制;尽管参照前述各实施例对本发明进行了详细的说明,本领域的普通技术人员应当理解:其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分或者全部技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本发明各实施例技术方案的范围。

Claims (5)

1.一种薄膜太阳能电池,包括设有散热层的散热基板,其特征在于,所述散热基板上设有导电层、光伏材料层和柔性承载层,所述导电层包括第一导电层、中间导电层、第二导电层,所述第一导电层覆盖于所述光伏材料层的上方,所述中间导电层位于所述光伏材料层的下方,所述散热基板位于所述中间导电层和所述柔性承载层之间,最下层为所述第二导电层,所述第一导电层、中间导电层、第二导电层均为石墨烯材料,所述第一导电层外部设有保护层,所述保护层两侧还设有保护层压件。
2.根据权利要求1所述的一种薄膜太阳能电池,其特征在于,所述第一导电层和所述光伏材料层之间设有硫化镉缓冲层。
3.根据权利要求1所述的一种薄膜太阳能电池,其特征在于,所述中间导电层和所述光伏材料层之间设有硫化镉缓冲层。
4.根据权利要求1所述的一种薄膜太阳能电池,其特征在于,所述柔性承载层和所述中间导电层之间设有硫化镉缓冲层。
5.根据权利要求1所述的一种薄膜太阳能电池,其特征在于,所述第二导电层外部设有Ag反射层。
CN201711280369.2A 2017-12-05 2017-12-05 一种薄膜太阳能电池 Pending CN107994088A (zh)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104733547A (zh) * 2015-03-27 2015-06-24 西交利物浦大学 基于石墨烯的柔性碲化镉薄膜太阳能电池及其制备方法
CN105932161A (zh) * 2016-07-13 2016-09-07 苏州协鑫集成科技工业应用研究院有限公司 叠层太阳能电池及其制备方法
CN106847964A (zh) * 2016-11-29 2017-06-13 梁结平 一种非晶硅薄膜光伏组件
CN206619600U (zh) * 2016-12-21 2017-11-07 江苏欣战江新能源有限公司 一种太阳能电池片组件

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104733547A (zh) * 2015-03-27 2015-06-24 西交利物浦大学 基于石墨烯的柔性碲化镉薄膜太阳能电池及其制备方法
CN105932161A (zh) * 2016-07-13 2016-09-07 苏州协鑫集成科技工业应用研究院有限公司 叠层太阳能电池及其制备方法
CN106847964A (zh) * 2016-11-29 2017-06-13 梁结平 一种非晶硅薄膜光伏组件
CN206619600U (zh) * 2016-12-21 2017-11-07 江苏欣战江新能源有限公司 一种太阳能电池片组件

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Application publication date: 20180504