CN107994013A - A kind of LED encapsulation method - Google Patents
A kind of LED encapsulation method Download PDFInfo
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- CN107994013A CN107994013A CN201711214210.0A CN201711214210A CN107994013A CN 107994013 A CN107994013 A CN 107994013A CN 201711214210 A CN201711214210 A CN 201711214210A CN 107994013 A CN107994013 A CN 107994013A
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- 238000005538 encapsulation Methods 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims abstract description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 134
- 239000000741 silica gel Substances 0.000 claims abstract description 132
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 132
- 239000000758 substrate Substances 0.000 claims abstract description 79
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 43
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 43
- 239000010703 silicon Substances 0.000 claims abstract description 43
- 239000003292 glue Substances 0.000 claims abstract description 41
- 239000000463 material Substances 0.000 claims abstract description 20
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 14
- 238000003466 welding Methods 0.000 claims abstract description 5
- 229960001866 silicon dioxide Drugs 0.000 claims description 128
- 238000002360 preparation method Methods 0.000 claims description 18
- 239000004411 aluminium Substances 0.000 claims description 7
- 229910000679 solder Inorganic materials 0.000 claims description 5
- 238000007689 inspection Methods 0.000 claims description 4
- 238000005476 soldering Methods 0.000 claims description 4
- 238000005266 casting Methods 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 12
- 238000001816 cooling Methods 0.000 abstract description 7
- 239000000843 powder Substances 0.000 description 16
- 238000010586 diagram Methods 0.000 description 5
- 238000005286 illumination Methods 0.000 description 4
- 230000032683 aging Effects 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 241001465382 Physalis alkekengi Species 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 235000013399 edible fruits Nutrition 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229920002379 silicone rubber Polymers 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 241001025261 Neoraja caerulea Species 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- NCWQJOGVLLNWEO-UHFFFAOYSA-N methylsilicon Chemical compound [Si]C NCWQJOGVLLNWEO-UHFFFAOYSA-N 0.000 description 1
- 239000000693 micelle Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/648—Heat extraction or cooling elements the elements comprising fluids, e.g. heat-pipes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The present invention relates to a kind of LED encapsulation method, this method includes：Choose heat-radiating substrate, welding RGB three-primary color LED chips on heat-radiating substrate are stated described, lower floor's silica gel is grown on the RGB three-primary color LEDs chip, semispherical silicon glue lens are grown on lower floor's silica gel, upper strata silica gel is grown on lower floor's silica gel and on the semispherical silicon glue lens to complete the encapsulation of the LED.The LED encapsulation structure of the present invention adds the heat-radiating substrate effect of LED by using the aluminum cooling substrates with oblique through-hole structure, it can ensure that LED chip can preferably shine out through encapsulating material using semispherical silicon glue lens structure, improve the transmissivity of light.
Description
Technical field
The present invention relates to LED encapsulation technologies field, more particularly to a kind of LED encapsulation method.
Background technology
Last century Mo, using Group III-V compound semiconductor the dashing forward in blue-ray light die chip field that GaN base material is representative
It is broken, an illumination revolution is brought, the mark of this revolution is with large-power light-emitting diodes (Light-Emitting
Diode, LED) be light source semiconductor illumination technique (Solid State Lighting, SSL).
So-called LED lamp, exactly a kind of to make the lamps and lanterns used using light emitting diode for main material, it why can
It is enough to shine, it is primarily due to us and allows for the PN junction of this semiconductor using faint electric energy to reach luminous effect,
The meaning is exactly, we in the case of the voltage and current of certain forward bias, inject the electronics in P areas and N areas diffusion when
Wait by radiation recombination and send light source.Compared with conventional bulb, LED light is with luminance purity is high, power consumption is low, extra long life
Etc. advantage.In recent years, LED produces white light by the way of GaN base blue light wick adds yellow fluorescence more, to realize illumination, the party
There are problems with for formula.
First, since great power LED is used for the occasions such as illumination, cost control is particularly significant, and outside high-powered LED lamp
Heat sink structure size does not allow too greatly, unlikely to allow to power up the mode active heat removal substrates such as fan, LED chip work yet
Safe junction temperature should within 110 DEG C, if junction temperature is excessive, can cause light intensity reduction, spectral shift, colour temperature rise, thermal stress
Increase, chip accelerated ageing a series of problems, such as, the service life of LED is greatly reduced, at the same time it can also cause chip top
Filling encapsulation micelle colloid accelerated ageing, influences its light transmission efficiency.At present, chip majority is packaged in thin heat dissipation metal substrate
On, since heat dissipation metal substrate is relatively thin, thermal capacitance is smaller, and it is easily deformed, causes it to be contacted not enough with heat-radiating substrate piece bottom surface
Closely influence heat-radiating substrate effect.Second, the light that LED light source is sent generally is distributed in divergence expression, i.e. lambertian distribution, causes light
Source lighting brightness is not enough concentrated, and is generally required and is carried out secondary reshaping by outer lens, to adapt to the lighting demand of specific occasion,
Therefore production cost is added.Only the energy of some is converted into luminous energy in 3rd, LED input power, remaining energy is then
Thermal energy is converted into, so for the very big LED chip of LED chip, especially power density, how to control its energy, is LED systems
Make the major issue that should be solved emphatically with lamps and lanterns.4th, phosphor material powder is considered as that influence LED encapsulation efficiency of light extraction is most heavy
One of encapsulating material wanted, foreign study personnel have found that the light scattering characteristic of fluorescent powder causes significant component of forward entrance light
Line can be by back scattering.In current high-power LED encapsulation structure, fluorescent powder is usually to be applied directly to chip surface.Due to
Chip for back scattering light there are absorption, therefore, what this mode directly coated will reduce encapsulation takes light
Efficiency, in addition, the high temperature that chip produces can be remarkably decreased the quantum efficiency of fluorescent powder, so as to seriously affect the lumen of encapsulation
Efficiency.
The content of the invention
Therefore, to solve technological deficiency and deficiency existing in the prior art, the present invention proposes a kind of LED encapsulation method.
Specifically, a kind of LED encapsulation method that one embodiment of the invention proposes, including：
Choose heat-radiating substrate；
RGB three-primary color LED chips are welded on the heat-radiating substrate；
Lower floor's silica gel is grown on the RGB three-primary color LEDs chip；
Semispherical silicon glue lens are grown on lower floor's silica gel；
Upper strata silica gel is grown on lower floor's silica gel and the semispherical silicon glue lens to complete the encapsulation of the LED.
In one embodiment of the invention, the material of the heat-radiating substrate is aluminium, and thickness is 0.5~10mm.
In one embodiment of the invention, circular through hole is provided with the heat-radiating substrate, the circular through hole is in institute
State and arranged in the width direction inside heat-radiating substrate, and with the heat-radiating substrate plane into 1~10 ° of angle；Wherein, the circle
A diameter of 0.1~0.3mm of through hole, the spacing between the circular through hole is 0.5~10mm.
In one embodiment of the invention, the circular through hole by directly cast or on the heat-radiating substrate it is straight
Fluting is connect to be formed.
In one embodiment of the invention, RGB three-primary color LED chips are welded on the heat-radiating substrate, including：
Choose the RGB three-primary color LEDs chip；
In the RGB three-primary color LEDs chip printing solder；
Die bond inspection is carried out to the RGB three-primary color LEDs chip；
The RGB three-primary color LEDs chip is welded on the heat-radiating substrate using Reflow Soldering welding procedure.
In one embodiment of the invention, lower floor's silicon is grown on the RGB three-primary color LEDs chip using coating processes
Glue.
In one embodiment of the invention, semispherical silicon glue lens are grown on lower floor's silica gel, including：
The first layer of silica gel is coated in the upper surface of lower floor's silica gel；
The first hemispherical silica gel is formed in first layer of silica gel using the first hemispherical；
At a temperature of 90~125 DEG C, the first hemispherical silica gel is toasted, baking time is 15~60min；
First hemispherical is removed, completes the preparation of the semispherical silicon glue lens.
In one embodiment of the invention, on lower floor's silica gel and upper strata is grown on the semispherical silicon glue lens
Silica gel, including：
The second layer of silica gel is coated on lower floor's silica gel and the semispherical silicon glue lens；
Utilize formation second hemispherical silica gel of second hemispherical in second layer of silica gel；
At a temperature of 90 DEG C~125 DEG C, the second hemispherical silica gel is toasted, baking time is 115~60min；
Second hemispherical is removed, completes the preparation of the upper strata silica gel.
In one embodiment of the invention, after the preparation for completing the upper strata silica gel, further include：At 100~150 DEG C
At a temperature of, it is overall to toast heat-radiating substrate, RGB three-primary color LEDs chip, lower floor's silica gel, semispherical silicon glue lens and the upper layer of silicon
Glue, baking time are 4~12h.
In one embodiment of the invention, the refractive index of the semispherical silicon glue lens is more than lower floor's silica gel and institute
State the refractive index of upper strata silica gel.
The embodiment of the present invention, possesses following advantage：
1st, the heat-radiating substrate in LED encapsulation structure use for aluminum cooling substrates, aluminum cooling substrates have thermal capacitance it is big, heat conduction
Effect is good, it is not easy to deforms, the characteristics of close is contacted with heat-radiating substrate device, improve the heat-radiating substrate effect of LED encapsulation structure
Fruit；And the embodiment of the present invention makes LED at it by setting oblique through hole inside the aluminum cooling substrates in LED encapsulation structure
While intensity has almost no change, aluminium cost is reduced, and using the mode of middle tiltedly through hole, air stream can be increased
Logical passage, the thermal convection current speed of air is lifted using stack effect, improves the heat-radiating substrate effect of LED.
2nd, fluorescent powder is free of in LED encapsulation structure of the invention, the amount for solving caused fluorescent powder under the high temperature conditions
The problem of sub- efficiency declines.
3rd, using variety classes silica gel refractive index it is different the characteristics of, form lens in silica gel, improve LED chip and shine point
The problem of dissipating, enables the light that light source is sent more to concentrate；By varying the row of the semispherical silicon glue lens in LED encapsulation structure
Mode for cloth, it is ensured that the light of light source is uniformly distributed in concentration zones, as the arrangement mode of semispherical silicon glue lens is rectangular or
Person's diamond array.
4th, the refractive index of lower floor's silica gel is less than the refraction of upper strata silica gel used by the LED encapsulation structure for preparing of the present invention
Rate, the refractive index of the material of spherical silica gel lens, which is more than lower floor's silica gel and upper strata silica gel refractive index, this setup, to be carried
The light transmittance of high LED chip, enables the light that LED chip is emitted more to shine out through encapsulating material.
5th, set hemispherical lens to change the direction of propagation of light in LED encapsulation structure, effectively inhibit total reflection effect
Should, be conducive to more light emittings to LED outsides, increase the external quantum efficiency of LED component, improve the luminous efficiency of LED.
By the detailed description below with reference to attached drawing, other side of the invention and feature become obvious.But it should know
Road, which is only the purpose design explained, not as the restriction of the scope of the present invention, this is because it should refer to
Appended claims.It should also be noted that unless otherwise noted, it is not necessary to which scale attached drawing, they only try hard to concept
Ground illustrates structure and flow described herein.
Brief description of the drawings
Below in conjunction with attached drawing, the embodiment of the present invention is described in detail.
Fig. 1 is a kind of LED encapsulation method flow chart provided in an embodiment of the present invention；
Fig. 2 is a kind of LED encapsulation method flow diagram provided in an embodiment of the present invention；
Fig. 3 is a kind of LED encapsulation structure diagrammatic cross-section provided in an embodiment of the present invention；
Fig. 4 is a kind of RGB three-primary color LEDs chip structure principle schematic provided in an embodiment of the present invention；
Fig. 5 is a kind of heat-radiating substrate diagrammatic cross-section provided in an embodiment of the present invention；
Fig. 6 a are a kind of spherical silica gel lens profile schematic diagram provided in an embodiment of the present invention；
Fig. 6 b are another spherical silica gel lens profile schematic diagram provided in an embodiment of the present invention.
Embodiment
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, below in conjunction with the accompanying drawings to the present invention
Embodiment be described in detail.
Embodiment one
Fig. 1 is referred to, Fig. 1 is a kind of LED encapsulation method flow chart provided in an embodiment of the present invention.This method includes as follows
Step：
Step a, heat-radiating substrate is chosen；
Step b, RGB three-primary color LED chips are welded on the heat-radiating substrate；
Step c, lower floor's silica gel is grown on the RGB three-primary color LEDs chip；
Step d, semispherical silicon glue lens are grown on lower floor's silica gel；
Step e, upper strata silica gel is grown on lower floor's silica gel and on the semispherical silicon glue lens to complete the LED
Encapsulation.
Preferably, the material of the heat-radiating substrate is aluminium, and thickness is 0.5~10mm.
Preferably, circular through hole, circular through hole edge inside the heat-radiating substrate are provided with the heat-radiating substrate
Width arranges, and with the heat-radiating substrate plane into 1~10 ° of angle；Wherein, a diameter of the 0.1 of the circular through hole
~0.3mm, the spacing between the circular through hole is 0.5~10mm.
Preferably, the circular through hole is formed by directly casting or directly slotting on the heat-radiating substrate.
Wherein, step b includes：
Step b1, the RGB three-primary color LEDs chip is chosen；
Step b2, in the RGB three-primary color LEDs chip printing solder；
Step b3, die bond inspection is carried out to the RGB three-primary color LEDs chip；
Step b4, the RGB three-primary color LEDs chip is welded on the heat-radiating substrate using Reflow Soldering welding procedure.
Wherein, step c includes：Lower floor's silica gel is grown on the RGB three-primary color LEDs chip using coating processes.
Wherein, step d includes：
Step d1, the first layer of silica gel is coated in the upper surface of lower floor's silica gel；
Step d2, the first hemispherical silica gel is formed in first layer of silica gel using the first hemispherical；
Step d3, at a temperature of 90~125 DEG C, the first hemispherical silica gel, baking time are toasted
For 15~60min；
Step d4, first hemispherical is removed, completes the preparation of the semispherical silicon glue lens.
Wherein, step e includes：
Step e1, the second layer of silica gel is coated on lower floor's silica gel and the semispherical silicon glue lens；
Step e2, the second hemispherical silica gel is formed in second layer of silica gel using the second hemispherical；
Step e3, at a temperature of 90 DEG C~125 DEG C, toast the second hemispherical silica gel, baking time for 15~
60min；
Step e4, second hemispherical is removed, completes the preparation of the upper strata silica gel.
Wherein, after the preparation for completing the upper strata silica gel, further include：It is overall to toast institute at a temperature of 100~150 DEG C
State heat-radiating substrate, RGB three-primary color LEDs chip, lower floor's silica gel, semispherical silicon glue lens and upper strata silica gel, baking time for 4~
12h。
Preferably, the refractive index of the semispherical silicon glue lens is more than the refraction of lower floor's silica gel and the upper strata silica gel
Rate.
Beneficial effects of the present invention are specially：
1st, the heat-radiating substrate in LED encapsulation structure use for aluminum cooling substrates, aluminum cooling substrates have thermal capacitance it is big, heat conduction
Effect is good, it is not easy to deforms, the characteristics of close is contacted with heat-radiating substrate device, improve the heat-radiating substrate effect of LED encapsulation structure
Fruit；And the embodiment of the present invention makes LED at it by setting oblique through hole inside the aluminum cooling substrates in LED encapsulation structure
While intensity has almost no change, aluminium cost is reduced, and using the mode of middle tiltedly through hole, air stream can be increased
Logical passage, the thermal convection current speed of air is lifted using stack effect, improves the heat-radiating substrate effect of LED.
2nd, fluorescent powder is free of in LED encapsulation structure of the invention, the amount for solving caused fluorescent powder under the high temperature conditions
The problem of sub- efficiency declines.
3rd, using variety classes silica gel refractive index it is different the characteristics of, form lens in silica gel, improve LED chip and shine point
The problem of dissipating, enables the light that light source is sent more to concentrate；By varying the row of the semispherical silicon glue lens in LED encapsulation structure
Mode for cloth, it is ensured that the light of light source is uniformly distributed in concentration zones, as the arrangement mode of semispherical silicon glue lens is rectangular or
Person's diamond array.
4th, the refractive index of lower floor's silica gel is less than the refraction of upper strata silica gel used by the LED encapsulation structure for preparing of the present invention
Rate, the refractive index of the material of spherical silica gel lens, which is more than lower floor's silica gel and upper strata silica gel refractive index, this setup, to be carried
The light transmittance of high LED chip, enables the light that LED chip is emitted more to shine out through encapsulating material.
5th, the RGB three-primary color LED chips that the present invention uses avoid the light extraction caused by fluorescent powder doping uneven two not
The problem of uniform, at the same improve because fluorescent powder is in granular form cause light emission rate to decline the problem of.
Embodiment two
Fig. 2 is referred to, Fig. 2 is a kind of LED encapsulation method flow diagram provided in an embodiment of the present invention.In above-mentioned implementation
On the basis of example, the technological process in more detail to the present invention is introduced the present embodiment.This method includes：
The preparation of S1, heat-radiating substrate；
The preparation of S11, stent/heat-radiating substrate；
Specifically, it is 0.5~10mm to choose thickness, and material is the heat-radiating substrate 101 of aluminium, cuts heat-radiating substrate 101；
The cleaning of S12, stent/heat-radiating substrate；
Specifically, the spot above heat-radiating substrate 101 and stent, especially oil stain are cleaned up；
The baking of S13, stent/heat-radiating substrate；
Specifically, the heat-radiating substrate 101 and stent that baking cleaning is completed, keep the drying of heat-radiating substrate 101 and stent.
Preferably, have inside heat-radiating substrate 101 in the width direction and in a certain angle with 101 plane of heat-radiating substrate
Circular through hole；Wherein, a diameter of 0.1~0.3mm of circular through hole, the angle of circular through hole and 101 plane of heat-radiating substrate is 1~
10 °, the spacing between circular through hole is 0.5~10mm.
Preferably, the circular through hole in heat-radiating substrate 101 by direct casting technique or on heat-radiating substrate 101 along width
Directly slot to be formed in degree direction.
Preferably, stent is used to fix RGB three-primary color LEDs chip and draws lead；
The preparation of S2, chip；
S21, choose RGB three-primary color LED chips；
S22, by solder printing to RGB three-primary color LED chips；
S23, the RGB three-primary color LEDs chip progress die bond inspection that solder will be printed with；
S24, using Reflow Soldering welding procedure be welded to the top of heat-radiating substrate 101 by RGB three-primary color LED chips.
The preparation of S3, lower floor's silica gel 102；
Specifically, above the RGB three-primary color LED chips on coat lower floor's silica gel 102, complete the preparation of lower floor's silica gel 102.
Preferably, lower floor's silica gel 103 is free of fluorescent powder.
The preparation of S4, semispherical silicon glue lens 103；
S41, lower floor's silica gel 103 upper surface coat the first layer of silica gel；
S42, set the first hemispherical in the first layer of silica gel, using the first hemispherical in the first layer of silica gel
Form the first hemispherical silica gel with hemispherical shape；
S43, baking are provided with the first hemispherical silica gel of the first hemispherical, and baking temperature is 90~125 DEG C, baking
Time is 15~60min, makes the first semispherical silicon adhesive curing；
After S44, baking are completed, the first hemispherical being arranged in the first layer of silica gel is removed, completes hemispherical
The preparation of silica-gel lens 103.
Preferably, semispherical silicon glue lens 103 are free of fluorescent powder.
The preparation of S5, upper strata silica gel 104；
S51, coat the second layer of silica gel on lower floor's silica gel 102 and semispherical silicon glue lens 103；
S52, set the second hemispherical in the second layer of silica gel, using the second hemispherical in the second layer of silica gel
Form the second hemispherical silica gel with hemispherical shape；
S53, baking are provided with the second hemispherical silica gel of the first hemispherical, and baking temperature is 90~125 DEG C, baking
Time is 15~60min, makes the second semispherical silicon adhesive curing；
S54, by the second hemispherical being arranged in the second layer of silica gel remove, complete upper strata silica gel 104 preparation.
Preferably, upper strata silica gel 105 is free of fluorescent powder.
S6, length are roasting；
Specifically, overall baking heat-radiating substrate 101, RGB three-primary color LEDs chip, lower floor's silica gel 102, hemispherical silica gel are saturating
Mirror 103 and upper strata silica gel 104, baking temperature are 100~150 DEG C, and baking time is 4~12h, completes the encapsulation of LED.
The LED that S7, test, go-no-go encapsulation are completed.
The LED encapsulation structure of S8, Package Testing qualification.
Embodiment three
Please also refer to Fig. 3, Fig. 4, Fig. 5 and Fig. 6 a~Fig. 6 b, Fig. 3 is a kind of LED encapsulation provided in an embodiment of the present invention
Structural profile illustration, Fig. 4 are a kind of RGB three-primary color LEDs chip structure principle schematic provided in an embodiment of the present invention, Fig. 5
For a kind of heat-radiating substrate diagrammatic cross-section provided in an embodiment of the present invention, Fig. 6 a are a kind of spherical silicon provided in an embodiment of the present invention
Glue lens diagrammatic cross-section, Fig. 6 b are another spherical silica gel lens profile schematic diagram provided in an embodiment of the present invention.Above-mentioned
On the basis of embodiment, the LED encapsulation structure of the present invention will be introduced in the present embodiment, which includes：
Heat-radiating substrate 101；
Wherein, as shown in figure 5, the material of heat-radiating substrate 101 is aluminium, the thickness D of heat-radiating substrate 101 is 0.5~10mm,
Circular through hole is provided with heat-radiating substrate 101, circular through hole arranges in the width direction inside heat-radiating substrate 101, and with heat dissipation
101 plane of substrate circular through hole in a certain angle；Wherein, the quantity of circular through hole be n and n >=2, it is a diameter of 0.1~
0.3mm, circular through hole and the angle of 101 plane of heat-radiating substrate are 1~10 °, and the spacing between circular through hole is 0.5~10mm.
Lower floor's silica gel 102, is formed at heat-radiating substrate 101 and RGB three-primary color LED chip upper surfaces；
Wherein, lower floor's silica gel 103 does not contain fluorescent powder and is the silica gel of high temperature resistant material.
Preferably, the material of lower floor's silica gel 103 can be modified epoxy, organosilicon material.
The silica gel being preferably in contact in LED encapsulation structure with LED chip is heat safe silica gel, solves silica gel in height
The problem of light transmittance declines because caused by turning to be yellow silica gel aging under the conditions of temperature.
Semispherical silicon glue lens 103, are formed at heat-radiating substrate 101 and RGB three-primary color LED chip upper surfaces；
Wherein, a diameter of 10~200 μm of semispherical silicon glue lens 103, the spacing between semispherical silicon glue lens 103 are
10~200 μm, semispherical silicon glue lens 103 do not contain fluorescent powder, and the refractive index of semispherical silicon glue lens 103 is more than lower floor's silica gel
102 and the refractive index of upper strata silica gel 104.
Preferably, the material of semispherical silicon glue lens 103 can be polycarbonate, polymethyl methacrylate, glass.
Preferably, as shown in Fig. 6 a~6b, spherical silica gel lens 103 can rectangular or diamond shape it is evenly distributed.
Upper strata silica gel 104, is formed at 102 upper surface of semispherical silicon glue lens 103 and lower floor's silica gel；
Wherein, the thickness of upper strata silica gel 104 is 50~500 μm, refractive index≤1.5, and upper strata silica gel 105 is free of fluorescent powder,
And the refractive index of upper strata silica gel 104 is more than the refractive index of lower floor's silica gel 102.
Preferably, the material of upper strata silica gel 104 can be epoxy resin, modified epoxy, organosilicon material, methyl silicon
Rubber, phenyl organic silicon rubber.
Preferably, upper strata silica gel 104 is hemispherical shape, and the beam angle of LED can be made maximum.
Preferably, upper strata silica gel 104 can also be two kinds of shapes of flat horizontal surface and paraboloidal.
In conclusion specific case used herein is to a kind of original of LED encapsulation method provided in an embodiment of the present invention
Reason and embodiment are set forth, and the explanation of above example is only intended to help to understand that the method for the present invention and its core are thought
Think；Meanwhile for those of ordinary skill in the art, according to the thought of the present invention, in specific embodiments and applications
There will be changes, in conclusion this specification content should not be construed as limiting the invention, protection scope of the present invention
It should be subject to appended claim.
Claims (10)
- A kind of 1. LED encapsulation method, it is characterised in that including：Choose heat-radiating substrate；RGB three-primary color LED chips are welded on the heat-radiating substrate；Lower floor's silica gel is grown on the RGB three-primary color LEDs chip；Semispherical silicon glue lens are grown on lower floor's silica gel；Upper strata silica gel is grown on lower floor's silica gel and on the semispherical silicon glue lens to complete the encapsulation of the LED.
- 2. according to the method described in claim 1, it is characterized in that, the material of the heat-radiating substrate is aluminium, thickness for 0.5~ 10mm。
- 3. according to the method described in claim 2, it is characterized in that, be provided with circular through hole in the heat-radiating substrate, the circle Shape through hole arranges in the width direction inside the heat-radiating substrate, and with the heat-radiating substrate plane into 1~10 ° of angle；Its In, a diameter of 0.1~0.3mm of the circular through hole, the spacing between the circular through hole is 0.5~10mm.
- 4. according to the method described in claim 3, it is characterized in that, the circular through hole is by directly casting or being dissipated described Directly fluting is formed on hot substrate.
- 5. according to the method described in claim 1, it is characterized in that, RGB three-primary color LED cores are welded on the heat-radiating substrate Piece, including：Choose the RGB three-primary color LEDs chip；In the RGB three-primary color LEDs chip printing solder；Die bond inspection is carried out to the RGB three-primary color LEDs chip；The RGB three-primary color LEDs chip is welded on the heat-radiating substrate using Reflow Soldering welding procedure.
- 6. according to the method described in claim 1, it is characterized in that, using coating processes on the RGB three-primary color LEDs chip Grow lower floor's silica gel.
- 7. according to the method described in claim 1, it is characterized in that, on lower floor's silica gel grow semispherical silicon glue lens, Including：The first layer of silica gel is coated in the upper surface of lower floor's silica gel；The first hemispherical silica gel is formed in first layer of silica gel using the first hemispherical；At a temperature of 90~125 DEG C, the first hemispherical silica gel is toasted, baking time is 15~60min；First hemispherical is removed, completes the preparation of the semispherical silicon glue lens.
- 8. according to the method described in claim 1, it is characterized in that, on lower floor's silica gel and the semispherical silicon glue lens Upper growth upper strata silica gel, including：The second layer of silica gel is coated on lower floor's silica gel and the semispherical silicon glue lens；The second hemispherical silica gel is formed in second layer of silica gel using the second hemispherical；At a temperature of 90 DEG C~125 DEG C, the second hemispherical silica gel is toasted, baking time is 15~60min；Second hemispherical is removed, completes the preparation of the upper strata silica gel.
- 9. according to the method described in claim 8, it is characterized in that, after completing the preparation of the upper strata silica gel, further include：It is overall to toast the heat-radiating substrate, RGB three-primary color LEDs chip, lower floor's silica gel, hemisphere at a temperature of 100~150 DEG C Shape silica-gel lens and upper strata silica gel, baking time are 4~12h.
- 10. according to the method described in claim 1, it is characterized in that, the refractive index of the semispherical silicon glue lens is more than described The refractive index of lower floor's silica gel and the upper strata silica gel.
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