CN107992431A - A kind of power-off protection method of nand flash memory invalid data recycling - Google Patents

A kind of power-off protection method of nand flash memory invalid data recycling Download PDF

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Publication number
CN107992431A
CN107992431A CN201711389343.1A CN201711389343A CN107992431A CN 107992431 A CN107992431 A CN 107992431A CN 201711389343 A CN201711389343 A CN 201711389343A CN 107992431 A CN107992431 A CN 107992431A
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data
block
page
write
recovered
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杨昭宇
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Zhuhai Wisdom Electronic Technology Co Ltd
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Zhuhai Wisdom Electronic Technology Co Ltd
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    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02Addressing or allocation; Relocation
    • G06F12/0223User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023Free address space management
    • G06F12/0238Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02Addressing or allocation; Relocation
    • G06F12/0223User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023Free address space management
    • G06F12/0253Garbage collection, i.e. reclamation of unreferenced memory

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)

Abstract

The present invention relates to Nand flash memory technologies field, it is proposed that a kind of power-off protection method of nand flash memory invalid data recycling.Due to the electrical characteristic of MLC Nand flash memories, if toward powered-off fault during one page write-in data, the loss of data associated with the page can be caused, traditional processing method be when writing data more write a backup, so influence to write performance is very big;Or consider from performance, do not make back-up processing, but this sacrifices the reliability of data.The present invention is after the data page for being recovered block is all changed into invalid, continue the new block that is recovered of selection to be recycled, the coverage of data-crosstalk when being recovered the data of block not in power down from original, original is wiped again and is recovered block, and the valid data for ensureing to be replicated always have one must be backed up from data-crosstalk during power down.The method according to the invention, can lose the influence of data-crosstalk when the valid data that avoid being replicated are because of power down in the case of not increasing write-in data volume.

Description

A kind of power-off protection method of nand flash memory invalid data recycling
Technical field
The present invention relates to Nand flash memory technologies field, more particularly to a kind of power down of nand flash memory invalid data recycling Guard method.
Background technology
Nand flash memories are formed by multiple pieces, and each block is divided into 64,128 or 256 pages again.Nand flash memories are using page to be single Position read-write, is wiped in units of physical block, due to the physical characteristic of Nand flash memories, where a page must wait after data are write Block can be just again written after being wiped free of;Data to update the page, first can read data in the block where the page Into memory, updating the data for the page is replicated relevant position, block where the page is then wiped, finally again in memory The data of whole block write back, such operation risk that is relatively time consuming, and having power down to cause loss of data in operation; Therefore common processing mode is to write another sky for being mapped in same logical address to write updating the data for the page In white page.Above-mentioned processing mode causes same logical address to correspond to the page data of multiple versions, stores latest edition data Page be valid data page, and it is substituted storage legacy data page be invalid data page;The processing mode needs one A auxiliary space is implemented, and in use, as data update operation persistently increases, the invalid data page of generation is increasingly More, available auxiliary space is also fewer and fewer, in order to maintain normally to run, it is necessary to have one in due course invalid number The mechanism recycled according to page the space occupied, this mechanism are known as invalid data recycling.
A storage unit can store more in the Nand flash memories of multi-level cell memory (MLC, Multi-Level Cell) A position, for each bit distribution in same piece of not same page, these pages are being electrically associated, are known as shared Pages, if the powered-off fault when writing some page, the data in page associated there may also can be subject to crosstalk and be broken It is bad.The electrical characteristic requirement of Nand flash memories avoids writing page associated therewith at once after a page is write, therefore Nand dodges Manufacturer is deposited to specially they are separated during each progress page physics addressing.Taking cost into account, embedded scheme mainly passes through Loss of data caused by data-crosstalk during using appropriate software strategy to avoid power down.
Existing invalid data way of recycling is usually as Fig. 1 is described:A block B0 being recovered is selected, being recovered block B0 In valid data page, LP3, LP1, LP7, LP0, LP9(LP is meant that logical page (LPAGE)), copy in a blank block B1, and wipe Except block B0 is recovered, the invalid data page that is recovered in block B0 is all changed into blank page, and remaining blank in the blank block Page can be used for storing new data, so as to achieve the purpose that recycling.Above-mentioned removal process does not consider data-crosstalk during power down The problem of, if the blank page 100 toward the blank block B1 writes powered-off fault during data, in the page 101 being associated Data(Copy to the LP1 of blank block B1)Also it is destroyed, and the block B0 that is recovered has been wiped free of, the corresponding numbers of LP1 According to will forever lose.Be likely to become the object that is recovered due to all pieces, all data have it is destroyed can Can, coverage is very big.
And it is existing to power down when data-crosstalk the problem of processing mode be:Two points are written to respectively when writing data It is distributed in the page of different masses, two blocks backup each other, so as to ensure that at least one data in the block is intact during power down.This The method of sample is applied to above-mentioned garbage collection procedure, can be to avoid loss of data caused by data-crosstalk during power down, but has very bright The shortcomings that aobvious:Each part of data will be write twice, and hydraulic performance decline half, erasable number doubles.Therefore a kind of NAND is proposed The power-off protection method of flash memory invalid data recycling, to improve the above problem.
The content of the invention
The present invention proposes a kind of power-off protection method of nand flash memory invalid data recycling, is answered when invalid data is recycled The data of system and user write data and separately handle, can be avoided in the case where not increasing invalid data recycling write-in data volume by The valid data of duplication are lost when power down the influence of data-crosstalk.The method of the invention is for MLC Nand flash memories Physical characteristic operation.
It is of the invention to be using technical solution:The data that the data replicated when invalid data is recycled write with user are separately deposited Put;After the data page for being recovered block is all changed into invalid, not erasing at once is recovered block, but selects new be recovered Block, continues to replicate valid data, the coverage of data-crosstalk when original is recovered data in the block not in power down, then wipes Original is recovered block, it is ensured that at any time original be recovered valid data in the block at least one backup from serial data during power down Disturb influence.
Block is divided into two kinds of data types, storage user writes the block of data, is referred to as write-in block;Store invalid data recycling When the block of data that replicates, be referred to as receiving block.Invalid data way of recycling such as Fig. 2, from being recovered in block B0 a whole significant figures According to page, LP3, LP1, LP7, LP0, LP9, copy in receiving block B1;The valid data being recovered in block B0 are all replicated Afterwards, all data being recovered in block B0 are changed into invalid, at this moment wouldn't wipe and be recovered block;Choose and new be recovered block B2, the new valid data being recovered in block B2 is copied in the receiving block B1, allow power down when data-crosstalk influence model Enclose and move backward, the coverage 201 of data-crosstalk is not interfered with from being recovered the significant figure that is replicated in block B0 when power down According to 200;Then wipe again and be recovered block B0.If the powered-off fault when writing receiving block B1, it is assumed that correspond in receiving block B1 The data of logical page (LPAGE) LP1 are influenced and are destroyed by data-crosstalk during power down, can be logical page (LPAGE) LP1 again when powering on loading The page for corresponding to logical page (LPAGE) LP1 in B0 is mapped to, so avoids loss of data.
The beneficial effects of the invention are as follows:(1)The number when valid data for ensureing to replicate during invalid data recycling will not be because of power down Lost according to the influence of crosstalk, improve the reliability of data.(2)Relative to it is existing to power down when data-crosstalk the problem of place Reason mode, reduces the write-in data volume of invalid data reclaimer operation, lifts write performance and service life.
Brief description of the drawings
Fig. 1 is existing invalid data way of recycling schematic diagram.
Fig. 2 is the invalid data way of recycling schematic diagram of the present invention.
Fig. 3 is the invalid data reclaimer operation step schematic diagram of the present invention.
Fig. 4 is the operating procedure schematic diagram for moving more valid data.
Fig. 5 is the processing step schematic diagram of powered-off fault when being recycled during loading to invalid data.
Embodiment
Embodiments of the present invention are related to a kind of Nand flash data management methods, as follows:
(a) block is divided into two kinds of data types, storage user writes the block of data, is referred to as write-in block;Store invalid data recycling When the block of data that replicates, be referred to as receiving block;Utilize the out of band data area that there is each page in Nand flash memories(Oob areas)Record block Data type, the write-in sequence number of page, the corresponding logical address of data in page, will also be in out of band data area for receiving block Record page up in data from be recovered page number in the numbering and block of block;
(b) always sequential write expires a write-in block and takes a blank block again as new write-in block, to the write operation of receiving block also such as This, write operation to write-in block and the write operation to receiving block can be intersected by concrete condition to carry out;Same write-in block connects Receive in block, the data in the page of address rearward are newer than page above;
(c) when selecting new receiving block, as receiving block write-in sequence number after write-in sequence number increase by 1, then again write-in sequence number Increase by 1;All pages in the block are received all using the receiving block write-in sequence number;When selecting new write-in block, sequence number is write Increase by 1, in operation, write-in sequence number may be changed because operating receiving block, and writing all pages in the block always makes With newest write-in sequence number;
So in each receiving block, the data in the larger data page of write-in sequence number must be newer, to write-in block and such as This;Meanwhile if the write operation to write-in block and the write operation intersection progress to receiving block, presently written piece in operation In presently written page write-in sequence number be bound to it is bigger than the write-in sequence number of current receiving block;Therefore it is being mapped to same logical address Each page in the write-in sequence number of valid data page be necessarily the largest, if multiple pages in each page have corresponded to maximum Write sequence number, then they are inevitable in same piece, and wherein the page of address maximum is valid data page, remaining is invalid data Page.The receiving block being ultimately written or write-in block can be found according to write-in sequence number, further, according to the outer number of band with outer each page All valid data pages can be found according to the information in area.
Embodiments of the present invention are as shown in figure 3, be divided into four steps, unless otherwise instructed, the write operation in each step All carried out by above-mentioned flash data way to manage, each step is described as follows:
S300, the valid data page for being recovered block is copied in receiving block;
S301, select it is new be recovered block, replicate enough valid data pages into receiving block;
S302, erasing original are recovered block;
S303, if powered-off fault during write-in receiving block, the data in the page being currently written into and associated page may be broken It is bad, recovered when powering on loading.
According to an embodiment of the invention, in step S301, enough valid data pages according to two associated pages it Between ultimate range and receiving block in smaller value between remaining blank number of pages determine;Establishing each MLC Nand flash memories of support ID tables when, increase ultimate range between two associated pages this, the occurrence of the ultimate range passes through inquiry Shared pages distribution tables in MLC Nand flash memory user's manuals determine, if without shared pages distribution tables, The value of the ultimate range is set to the number of pages that block includes.
According to an embodiment of the invention, the specific steps of step S301 are as shown in figure 4, specific as follows:
S400, selects new to be recovered block;
S401, judge whether to choose it is new be recovered block, if then jumping to S402, otherwise jump to S404;
S402, move it is new be recovered valid data page in the block, until having moved enough valid data pages or new being recovered The valid data page of block is all moved;
S403, judges whether to have moved enough valid data pages, enough valid data pages and above-mentioned step S301 It is identical, if then jumping to S405, otherwise jump to S400;
S404, fills full 0 data page, until receiving block writes enough data page, enough valid data pages with it is above-mentioned Step S301 it is identical;
S405, operation are completed, and are terminated.
According to an embodiment of the invention, the specific steps of step S303 are as shown in figure 5, each step is described in detail below:
S500, reads the out of band data area in each piece of first page, finds the receiving block of write-in sequence number maximum, is last The receiving block B0 of write-in;In this step, if loss of data in first page of some block, one page progress is removed backward Read, until can correctly read out of band data area;
S501, what positioning was ultimately written receiving block B0 is ultimately written a page P0;
S502, judges whether the data of page P0 are destroyed, if being then determined as powered-off fault, jumps to S503, otherwise jumps to S511;
S503, selects a blank block B1, and the data being replicated are received when being handled for powered-off fault;
S504, reads one page P1 being ultimately written in receiving block B0, and since first page, one is taken backward automatically when performing again Page;
S505, judges whether the data in page P1 are destroyed, if then jumping to S507, otherwise jumps to S506;
S506, copies to the content in the data field in page P1 and out of band data area in blank block B1, jumps to S504;
S507, judges that the whether described receiving block B0's of page P1 is ultimately written page, if then jumping to S510, otherwise performs S508;
S508, reads the outer memory block of band of lower one page P2, obtains write-in sequence number N0, data are destroyed in page data from being recovered Page number P3 in the numbering B2 and block of block;Due to the write-in sequence number all same of each page in receiving block, recover data and be destroyed page When write-in sequence number can be set to N0, in block B2 the data of page P3 for data can be regarded as by data corruption page data it is standby Part, it can be used for recovery data and be destroyed page;
S509, copies to the content in the data field of page P3 and out of band data area in block B2 in blank block B1, when replicating The write-in sequence number in out of band data area is revised as write-in sequence number N0;Jump to S504;
Each complete write-in page in receiving block B0 is ultimately written before being completely included in powered-off fault in S510, blank block B1 Data and out of band data, handle operation to the powered-off fault for being ultimately written receiving block B0 and have completed, erasing is ultimately written receiving block B0;
S511, operation are completed, and are terminated.

Claims (4)

  1. A kind of 1. power-off protection method of nand flash memory invalid data recycling, it is characterised in that user write data with it is invalid The data replicated during data record are separately stored;After the data page for being recovered block is all changed into invalid, quilt is not wiped at once Recycle block, but select it is new be recovered block, continue to replicate valid data, when original is recovered data in the block not in power down The coverage of data-crosstalk, then wipe original and be recovered block;If powered-off fault when writing receiving block, carries out when powering on loading Recover.
  2. 2. according to the method described in claim 1, it is characterized in that, block is divided into two kinds of data types, storage user writes number According to block, be referred to as write-in block;The block of the data replicated during storage invalid data recycling, is referred to as receiving block;Using in Nand flash memories The out of band data area of each page(Oob areas)The corresponding logical address of data in the data type of record block, the write-in sequence number of page, page, For receiving block, recorded also in out of band data area data in page up from the page in the numbering and block of block that is recovered compile Number;When selecting new receiving block, as receiving block write-in sequence number after write-in sequence number increase by 1, then again the increase of write-in sequence number 1;All pages in the block are received all using the receiving block write-in sequence number;When selecting new write-in block, write-in sequence number increase 1, write all pages in the block and always use newest write-in sequence number.
  3. 3. according to the method described in claim 1, it is characterized in that, the coverage of data-crosstalk is according to phase during described power down Smaller value in ultimate range and receiving block between associated two pages between remaining blank number of pages determines;Establishing what is supported During the ID tables of each MLC Nand flash memories, increase ultimate range between two associated pages this, the ultimate range Occurrence is determined by inquiring about the shared pages distribution tables in MLC Nand flash memory user's manuals, if without shared The value of the ultimate range, then be set to the number of pages that block includes by pages distribution tables.
  4. If 4. according to the method described in claim 1, it is characterized in that, in invalid data removal process powered-off fault, Recover the page for being influenced by data-crosstalk during power down and causing data to be destroyed when powering on loading, by reading the next of the page The out of band data area of page obtain data in the page from be recovered page number in the numbering and block of block, broken so as to find The backup of bad data is simultaneously recovered.
CN201711389343.1A 2017-12-21 2017-12-21 A kind of power-off protection method of nand flash memory invalid data recycling Pending CN107992431A (en)

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CN112433959A (en) * 2020-11-24 2021-03-02 合肥大唐存储科技有限公司 Method and device for realizing data storage processing, computer storage medium and terminal
CN112578993A (en) * 2019-09-27 2021-03-30 北京忆恒创源科技有限公司 Method for processing programming error of multi-plane NVM and storage device
CN113126916A (en) * 2021-03-29 2021-07-16 广州安凯微电子股份有限公司 Data restoration method and device after abnormal power failure
CN113960391A (en) * 2021-09-13 2022-01-21 珠海亿智电子科技有限公司 Abnormal power failure testing device and method for storage medium
CN114385082A (en) * 2021-12-31 2022-04-22 北京得瑞领新科技有限公司 Data processing method of NOR flash memory, storage medium and SSD device
CN116909493A (en) * 2023-09-12 2023-10-20 合肥康芯威存储技术有限公司 Memory and control method thereof

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CN112578993A (en) * 2019-09-27 2021-03-30 北京忆恒创源科技有限公司 Method for processing programming error of multi-plane NVM and storage device
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CN113126916A (en) * 2021-03-29 2021-07-16 广州安凯微电子股份有限公司 Data restoration method and device after abnormal power failure
CN113960391A (en) * 2021-09-13 2022-01-21 珠海亿智电子科技有限公司 Abnormal power failure testing device and method for storage medium
CN114385082A (en) * 2021-12-31 2022-04-22 北京得瑞领新科技有限公司 Data processing method of NOR flash memory, storage medium and SSD device
CN116909493A (en) * 2023-09-12 2023-10-20 合肥康芯威存储技术有限公司 Memory and control method thereof
CN116909493B (en) * 2023-09-12 2023-11-17 合肥康芯威存储技术有限公司 Memory and control method thereof

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