CN107988577A - A kind of preparation method of CrSiBCN nano compound films - Google Patents
A kind of preparation method of CrSiBCN nano compound films Download PDFInfo
- Publication number
- CN107988577A CN107988577A CN201710971127.1A CN201710971127A CN107988577A CN 107988577 A CN107988577 A CN 107988577A CN 201710971127 A CN201710971127 A CN 201710971127A CN 107988577 A CN107988577 A CN 107988577A
- Authority
- CN
- China
- Prior art keywords
- crsibcn
- nano compound
- preparation
- compound films
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0664—Carbonitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0057—Reactive sputtering using reactive gases other than O2, H2O, N2, NH3 or CH4
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/024—Deposition of sublayers, e.g. to promote adhesion of the coating
- C23C14/025—Metallic sublayers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Abstract
The present invention provides a kind of preparation method of CrSiBCN nano compound films, belong to thin-film friction and Surface Engineering field, it is possible to increase the hardness of CrN films, reduces the dry friction coefficient of CrN films.The present invention includes the cleaning of stainless steel substrate, prepared by transition zone and nano compound film prepares three steps, using non-balance magnetically controlled sputter technology, in Ar, N2Or containing Si, C element gas mixed atmosphere in, cosputtering direct current（DC）And radio frequency（RF）Magnetic control target, CrSiBCN nano compound films are prepared on stainless steel substrate, in CrSiBCN nano compound films preparation method provided by the invention, Si, C element, which can derive from reaction atmosphere, can also derive from sputtering target material, preparation process is workable, and to target position, the unbalanced magnetron sputtering system different with gas circuit configuration number is applicable in.
Description
Technical field
The invention belongs to thin-film friction and Surface Engineering field, more particularly to a kind of CrSiBCN nano compound films
Preparation method.
Background technology
Chromium nitride（CrN）As first generation surface protection coating, because of its good mechanical performance and chemical inertness, no matter
Occupy a tiny space in surface abrasion resistance or anti-corrosion application.But pass through substantial amounts of research and find, sunk by different preparation methods
Long-pending CrN films, hardness are medium（10 GPa）And friction coefficient is higher under DRY SLIDING（0.5 or so）, this just makes CrN thin
Film should not be applied in harsh special operation condition is required surfacing wear rate and friction coefficient.In order to improve CrN films
Hardness and reduce its dry friction coefficient, to CrN carry out nano composite structure construct and the addition of lubricant component.Pass through element
The doping of Si, B, make CrSiN, CrBN film of preparation have nc-CrN/a-SiNx, nc-CrN/a-BN nano composite structures, this
The optimization structure that kind nanocrystal is embedded in amorphous matrix improves the hardness of CrN films；Pass through self-lubricating Elements C, Mo
Introduce, CrCN the or CrMoN films of preparation easily form the amorphous carbon beneficial to lubrication in friction process（a-C）Or molybdenum oxide
（MoO3）, so as to reduce the friction coefficient of CrN films.If elements Si, B and C are introduced CrN films at the same time, CrN/a- is formed
BN/a-SiNx/ a-C multifunctional nano structures, can not only improve the hardness of CrN films, but also can reduce the dry friction of CrN films
Coefficient.
The content of the invention
, can be according to different physical vapour deposition (PVD)s the present invention provides a kind of preparation method of CrSiBCN nano compound films
System target source and the configuration number of gas circuit, targetedly select reacting gas and sputtering target material value volume and range of product, prepare CrSiBCN
Nano compound film.
In order to realize the above object the present invention uses following scheme：
A kind of preparation method of CrSiBCN nano compound films, comprises the following steps：
（1）Base material cleans：Remove substrate surface residue and activated substrate deposition surface；
（2）It is prepared by transition zone：By direct magnetic control source splash-proofing sputtering metal Cr targets, deposit thickness is 100-200 nm on the substrate
Metal Cr transition zones；
（3）It is prepared by CrSiBCN nano compound films：In high-purity Ar, trimethyl silane SiH (CH3)3And N2Mixed atmosphere in, lead to
Cross direct magnetic control source splash-proofing sputtering metal Cr targets, radio frequency magnetron source sputtering CrB2Target, CrSiBCN is prepared on the metal Cr transition zones
Nano compound film.
Step in above step（3）Described in high-purity Ar, trimethyl silane SiH (CH3)3Intake be respectively 0-
50sccm, 0-50sccm, N2Intake monitors the % of OEM=50 by default light emission spectrum and automatically controls, the high-purity Ar,
Trimethyl silane SiH (CH3)3And N2Respectively in different gas circuits, metal Cr targets loading power is 0-2000W, described
CrB2Target loading power is 0-2000W.
A kind of preparation method of CrSiBCN nano compound films, comprises the following steps：
（1）Base material cleans：Remove substrate surface residue and activated substrate deposition surface；
（2）It is prepared by transition zone：By direct magnetic control source splash-proofing sputtering metal Cr targets, deposit thickness is 100-200 nm on the substrate
Metal Cr transition zones；
（3）It is prepared by CrSiBCN nano compound films：In high-purity Ar and N2Mixed atmosphere in, pass through direct magnetic control source sputtering gold
Belong to Cr targets, radio frequency magnetron source sputtering CrB2Target and SiC target, it is nano combined thin to prepare CrSiBCN on the metal Cr transition zones
Film.
Step in above step（3）Described in the intake of high-purity Ar be 0-50sccm, N2Intake passes through default
Light emission spectrum monitoring OEM=50 % are automatically controlled, the high-purity Ar and N2Respectively in different gas circuits, the metal Cr targets
Loading power is 0-2000W, the CrB2Target loading power is 0-2000W, and the SiC target loading power is 0-2000W.
Beneficial effects of the present invention are：, can be with the present invention provides a kind of preparation method of CrSiBCN nano compound films
Elements Si, B and C are introduced into CrN films at the same time, not only improved the hardness of CrN films as shown in Figures 2 and 3, but also reduces CrN
The dry friction coefficient of film；Can be according to different physics vapour deposition systems in the step of preparing CrSiBCN nano composite membranes
Target source and gas circuit configuration number unrestricted choice Si, the source of C element, reacting gas or sputtering target material species can also be passed through
Selection is conveniently adjusted Si in CrSiBCN nano compound films, the ratio of C element.
Brief description of the drawings
Fig. 1 is the depositing system schematic layout pattern that the present invention prepares CrSiBCN nano compound films.Wherein, dotted portion
For the distinctive points of two methods, embodiment 1 needs three gas circuits, two target position；Embodiment 2 needs two gas circuits, three target position.
Fig. 2 is that the CrSiBCN nano compound films prepared using the method for the present invention are rubbed with SiC balls under DRY SLIDING
Coefficient with skidding distance change curve.
Fig. 3 be using the method for the present invention prepare CrSiBCN nano compound films nano impress loading-unloading curve and
Corresponding hardness H and elastic modulus E.
Embodiment
Technical scheme is described in detail with reference to the accompanying drawings and examples.
Embodiment 1
（1）Base material cleans：Roughness essence is thrown to the 316L stainless steels of 50 nm（Φ30×6 mm2）Successively in acetone, alcohol and
Carry out being cleaned by ultrasonic each 10 minutes in deionized water, objective table of the electricity consumption blowing dry doubling clamping in physics vapour deposition system
On, apart from 17 cm of target；When physics vapour deposition system background vacuum reaches 3.0 × 10-6 During Torr, 50 sccm are passed through
Ar gas, set stainless steel substrate bias -450V, utilize ion beam source produce Ar+Ion accelerates bombardment 316L stainless steel watches
Face 30 minutes, removes pollutant and the activated deposition surface of substrate surface；
（2）It is prepared by transition zone：Ar+After icon bombardment cleaning base material, 50 sccm of Ar gas intake is kept, adjusts stainless steel substrate
- 80V is biased into, passes through direct current（DC）Magnetic control power supply loads 1200 W of power to metal Cr targets, runs 10 minutes, stainless in 316L
Deposit thickness is the metal Cr transition zones of 200 nm on steel substrate, increases upper strata CrSiBCN nano compound films and 316L is stainless
The combination power of steel substrate；
（3）It is prepared by CrSiBCN nano compound films：It is passed through the trimethyl silane SiH (CH of 10 sccm3)3, keep Ar gas to be passed through
50 sccm are measured, open N2Flow valve, is monitored by default light emission spectrum（OEM=50 %）Automatically control N2Intake；Using penetrating
Frequently（RF）Magnetic control power supply is to CrB2Load power 1400W；Utilize direct current（DC）Magnetic control power supply loads power to metal Cr targets
1400W, keeps 316L stainless steel substrate bias -80V, prepares CrSiBCN nano compound films at room temperature, preparation time 1 is small
When 10 minutes.
Embodiment 2
（1）Base material cleans：Roughness essence is thrown to the 316L stainless steels of 50 nm（Φ30×6 mm2）Successively in acetone, alcohol and
Carry out being cleaned by ultrasonic each 10 minutes in deionized water, objective table of the electricity consumption blowing dry doubling clamping in physics vapour deposition system
On, apart from 17 cm of target；When physics vapour deposition system background vacuum reaches 3.0 × 10-6 During Torr, 50 sccm are passed through
Ar gas, set stainless steel substrate bias -450V, utilize ion beam source produce Ar+Ion accelerates bombardment 316L stainless steel watches
Face 30 minutes, removes pollutant and the activated deposition surface of substrate surface；
（2）It is prepared by transition zone：Ar+After icon bombardment cleaning base material, 50 sccm of Ar gas intake is kept, adjusts stainless steel substrate
- 80V is biased into, passes through direct current（DC）Magnetic control power supply loads 1200 W of power to metal Cr targets, runs 10 minutes, stainless in 316L
Deposit thickness is the metal Cr transition zones of 200 nm on steel substrate, increases upper strata CrSiBCN nano compound films and 316L is stainless
The combination power of steel substrate；
（3）It is prepared by CrSiBCN nano compound films：50 sccm of Ar gas intake is kept, opens N2Flow valve, by default
Light emission spectrum monitors（OEM=50 %）Automatically control N2Intake；Utilize radio frequency（RF）Magnetic control power supply is to CrB2, SiC target adds respectively
Power 1400W, 2000W are carried, utilizes direct current（DC）Magnetic control power supply loads power 1400W to metal Cr targets, keeps 316L stainless steels
Substrate bias -80V, prepares CrSiBCN nano compound films at room temperature, 10 minutes when the duration 1 is small.
Reacting gas and sputtering target material species selection of the present invention is very much, and the above is only the side of being preferable to carry out of the present invention
Formula, it is noted that for those skilled in the art, without departing from the principle of the present invention, may be used also
To make some improvement, these improvement also should be regarded as protection scope of the present invention.
Claims (8)
1. a kind of preparation method of CrSiBCN nano compound films, it is characterised in that comprise the following steps：
（1）Base material cleans：Remove substrate surface residue and activated substrate deposition surface；
（2）It is prepared by transition zone：By direct magnetic control source splash-proofing sputtering metal Cr targets, deposit thickness is 100-200 nm on the substrate
Metal Cr transition zones；
（3）It is prepared by CrSiBCN nano compound films：In high-purity Ar, trimethyl silane SiH (CH3)3And N2Mixed atmosphere in, lead to
Cross direct magnetic control source splash-proofing sputtering metal Cr targets, radio frequency magnetron source sputtering CrB2Target, CrSiBCN is prepared on the metal Cr transition zones
Nano compound film.
2. according to the preparation method of the CrSiBCN nano compound films described in claim 1, it is characterised in that step（3）In
The high-purity Ar, trimethyl silane SiH (CH3)3Intake be respectively 0-50sccm, 0-50sccm, N2Intake passes through pre-
If light emission spectrum monitoring OEM=50 % automatically control.
3. according to the preparation method of the CrSiBCN nano compound films described in claim 1 or 2, it is characterised in that step
（3）Described in high-purity Ar, trimethyl silane SiH (CH3)3And N2Respectively in different gas circuits.
4. according to the preparation method of the CrSiBCN nano compound films described in claim 1, it is characterised in that step（3）In
The metal Cr targets loading power is 0-2000W, the CrB2Target loading power is 0-2000W.
5. a kind of preparation method of CrSiBCN nano compound films, it is characterised in that comprise the following steps：
（1）Base material cleans：Remove substrate surface residue and activated substrate deposition surface；
（2）It is prepared by transition zone：By direct magnetic control source splash-proofing sputtering metal Cr targets, deposit thickness is 100-200 nm on the substrate
Metal Cr transition zones；
（3）It is prepared by CrSiBCN nano compound films：In high-purity Ar and N2Mixed atmosphere in, pass through direct magnetic control source splash-proofing sputtering metal
Cr targets, radio frequency magnetron source sputtering CrB2Target and SiC target, prepare CrSiBCN nano compound films on the metal Cr transition zones.
6. according to the preparation method of the CrSiBCN nano compound films described in claim 5, it is characterised in that step（3）In
The intake of the high-purity Ar is 0-50sccm, N2Intake monitors the % of OEM=50 by default light emission spectrum and controls automatically
System.
7. according to the preparation method of the CrSiBCN nano compound films described in claim 5 or 6, it is characterised in that step
（3）Described in high-purity Ar and N2Respectively in different gas circuits.
8. according to the preparation method of the CrSiBCN nano compound films described in claim 5, it is characterised in that step（3）In
The metal Cr targets loading power is 0-2000W, the CrB2Target loading power is 0-2000W, and the SiC target applies power
For 0-2000W.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710971127.1A CN107988577B (en) | 2017-10-18 | 2017-10-18 | Preparation method of CrSiBCN nano composite film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710971127.1A CN107988577B (en) | 2017-10-18 | 2017-10-18 | Preparation method of CrSiBCN nano composite film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107988577A true CN107988577A (en) | 2018-05-04 |
| CN107988577B CN107988577B (en) | 2020-02-21 |
Family
ID=62029697
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710971127.1A Active CN107988577B (en) | 2017-10-18 | 2017-10-18 | Preparation method of CrSiBCN nano composite film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107988577B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109778119A (en) * | 2019-01-09 | 2019-05-21 | 南京航空航天大学 | A kind of Ni-CrSiN wear-and corrosion-resistant coating and preparation method thereof |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002337002A (en) * | 2001-05-11 | 2002-11-26 | Hitachi Tool Engineering Ltd | Hard-coating coated tool |
| JP2004106183A (en) * | 2003-12-09 | 2004-04-08 | Hitachi Tool Engineering Ltd | Hard film coated tool and its manufacturing method |
| CN101100963A (en) * | 2006-07-06 | 2008-01-09 | 帝国活塞环株式会社 | Piston ring for internal combustion engines |
| CN104918733A (en) * | 2013-01-24 | 2015-09-16 | H.C.施塔克股份有限公司 | Thermal spray powder for sliding systems which are subject to heavy loads |
| CN105274485A (en) * | 2015-11-16 | 2016-01-27 | 南京航空航天大学 | Preparation method for Cr-Si-C-N nano composite film |
| CN105316634A (en) * | 2015-11-16 | 2016-02-10 | 南京航空航天大学 | Preparation method for Cr-B-C-N nanocomposite film |
| CN105568230A (en) * | 2015-12-25 | 2016-05-11 | 珠海罗西尼表业有限公司 | Preparation method of functional gradient multi-layer nano coating on surface of steel workpiece and product comprising functional gradient multi-layer nano coating |
-
2017
- 2017-10-18 CN CN201710971127.1A patent/CN107988577B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002337002A (en) * | 2001-05-11 | 2002-11-26 | Hitachi Tool Engineering Ltd | Hard-coating coated tool |
| JP2004106183A (en) * | 2003-12-09 | 2004-04-08 | Hitachi Tool Engineering Ltd | Hard film coated tool and its manufacturing method |
| CN101100963A (en) * | 2006-07-06 | 2008-01-09 | 帝国活塞环株式会社 | Piston ring for internal combustion engines |
| CN104918733A (en) * | 2013-01-24 | 2015-09-16 | H.C.施塔克股份有限公司 | Thermal spray powder for sliding systems which are subject to heavy loads |
| CN105274485A (en) * | 2015-11-16 | 2016-01-27 | 南京航空航天大学 | Preparation method for Cr-Si-C-N nano composite film |
| CN105316634A (en) * | 2015-11-16 | 2016-02-10 | 南京航空航天大学 | Preparation method for Cr-B-C-N nanocomposite film |
| CN105568230A (en) * | 2015-12-25 | 2016-05-11 | 珠海罗西尼表业有限公司 | Preparation method of functional gradient multi-layer nano coating on surface of steel workpiece and product comprising functional gradient multi-layer nano coating |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109778119A (en) * | 2019-01-09 | 2019-05-21 | 南京航空航天大学 | A kind of Ni-CrSiN wear-and corrosion-resistant coating and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107988577B (en) | 2020-02-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Baptista et al. | On the physical vapour deposition (PVD): evolution of magnetron sputtering processes for industrial applications | |
| JP6084032B2 (en) | Steel-coated article and manufacturing method thereof | |
| US20050098119A1 (en) | Method and device for vacuum-coating a substrate | |
| CN107130222A (en) | High-power impulse magnetron sputtering CrAlSiN nano-composite coatings and preparation method thereof | |
| US5723188A (en) | Process for producing layers of cubic boron nitride | |
| CN108884550B (en) | Hydrogen-free carbon coating with zirconium adhesion layer | |
| CN108048810A (en) | It is a kind of superhard low to rub and wear-resisting protective coating and preparation method thereof | |
| CN104781444A (en) | Process for producing a metallic borocarbide layer on a substrate | |
| Pessoa et al. | Plasma-assisted techniques for growing hard nanostructured coatings: An overview | |
| CN105506566B (en) | A kind of preparation method of elastic hard lubrication nano composite film | |
| CN107988577A (en) | A kind of preparation method of CrSiBCN nano compound films | |
| Cheng et al. | Development of texture in TiN films deposited by filtered cathodic vacuum arc | |
| CN111850484B (en) | Device and method for preparing tough amorphous carbon-based multiphase hybrid film | |
| US20180135160A1 (en) | Method for controlling a gas supply to a process chamber, controller for controlling a gas supply to a process chamber, and apparatus | |
| CN102560339B (en) | Film-coated part and preparation method thereof | |
| Huang et al. | Molybdenum-containing carbon films deposited using the screen grid technique in an electron cyclotron resonance chemical vapor deposition system | |
| CN101550539B (en) | Method for depositing protection film on the ceramics valve core surface | |
| CN112941463A (en) | Nano multilayer oxynitride corrosion-resistant protective coating on titanium alloy surface and preparation method and application thereof | |
| He et al. | Deposition of c-BN on silicon substrates coated with diamond thin films | |
| KR100650504B1 (en) | Method for preparing tungsten carbide layer for replacing electroplating of chromium | |
| CN103173731B (en) | Method for improving property of TiN/TiCN multi-layer composite film material | |
| KR100777645B1 (en) | Diamond Like Carbon Coating Device and the Method for manufacturing the same | |
| UA77613C2 (en) | Method for forming wear resistant coating | |
| CN118007055A (en) | High-wear-resistance AlCrMoSiN gradient coating with gradient change of Mo content and preparation method thereof | |
| Lugscheider et al. | Investigations of multifunctional graded zirconium carbide PVD-coatings for the application on machine parts |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |