CN107968135B - Non-refrigeration type infrared detector and preparation method thereof - Google Patents
Non-refrigeration type infrared detector and preparation method thereof Download PDFInfo
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- CN107968135B CN107968135B CN201711195401.7A CN201711195401A CN107968135B CN 107968135 B CN107968135 B CN 107968135B CN 201711195401 A CN201711195401 A CN 201711195401A CN 107968135 B CN107968135 B CN 107968135B
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- 238000005057 refrigeration Methods 0.000 title claims abstract description 23
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 claims abstract description 37
- 239000000463 material Substances 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 230000008569 process Effects 0.000 claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 5
- 238000005516 engineering process Methods 0.000 claims description 15
- 230000015572 biosynthetic process Effects 0.000 claims description 14
- 238000010894 electron beam technology Methods 0.000 claims description 9
- 238000004544 sputter deposition Methods 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 8
- 239000011669 selenium Substances 0.000 claims description 8
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 229910052711 selenium Inorganic materials 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- 239000011701 zinc Substances 0.000 claims description 7
- 229910052793 cadmium Inorganic materials 0.000 claims description 6
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 4
- 229910052714 tellurium Inorganic materials 0.000 claims description 4
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims description 4
- 238000005137 deposition process Methods 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 3
- 229910052753 mercury Inorganic materials 0.000 claims description 3
- 238000010792 warming Methods 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 abstract description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 12
- 239000011787 zinc oxide Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
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- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
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- 238000007738 vacuum evaporation Methods 0.000 description 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- XOCUXOWLYLLJLV-UHFFFAOYSA-N [O].[S] Chemical compound [O].[S] XOCUXOWLYLLJLV-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
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- 230000007613 environmental effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- XGDBOJRURXXJBF-UHFFFAOYSA-M fluoroindium Chemical compound [In]F XGDBOJRURXXJBF-UHFFFAOYSA-M 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000004297 night vision Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- -1 polyethylene naphthalate Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- YOXKVLXOLWOQBK-UHFFFAOYSA-N sulfur monoxide zinc Chemical compound [Zn].S=O YOXKVLXOLWOQBK-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical group [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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Abstract
The invention discloses a kind of preparation methods of non-refrigeration type infrared detector, which is characterized in that including providing a substrate；Production forms first electrode layer over the substrate；Production forms absorbed layer in the first electrode layer；Production forms buffer layer on the absorbed layer；Production forms transparent electrode layer on the buffer layer；Production forms the second electrode lay on the transparent electrode layer, and the material of the absorbed layer is I B-, II B-, IV A-, VI A doped p-type material, and the material of the buffer layer is N-type semiconductor material.The embodiment of the invention discloses a kind of preparation methods of non-refrigeration type infrared detector, its simple process, required equipment is simpler, can large area production, low manufacture cost, civil nature can be achieved, absorbed layer, the wavelength of expansible infrared absorption are in addition made using I B-, II B-, IV A-, VI A doped p-type material.
Description
Technical field
The present invention relates to field of photoelectric technology more particularly to a kind of non-refrigeration type infrared detector and preparation method thereof.
Background technique
Infrared light is that human eye cannot observe directly, and wavelength is greater than 760 nanometers, the electromagnetism between visible light and microwave
Wave.Convert this infrared light to the physical quantity that can detecte, it is common practice to convert it to quantitative electric signal.
Short-wave infrared detector is the important technology of modern national defense military affairs, is mainly observed in night, smog convenient for soldier,
Short-wave infrared technology suffers from important role in fields such as monitoring resource, environmental monitoring, night vision imaging, medical diagnosis.At present
Widely applied infrared detector technology includes refrigeration and two class of non-brake method, and wherein refrigeration mode is due to needing complicated refrigeration to set
It is standby, and lead to systems bulky.Non-refrigeration type technology is started late, but is quickly grown, and wherein indium gallium arsenic type detector can be in room
The lower work of temperature, is widely applied to national defense and military fields.But due to its production technology complexity, defect tolerant degree is low, price is high
It is expensive, it can not also popularize civilian.
Summary of the invention
In view of the shortcomings of the prior art, the present invention provides a kind of simple process and lower-cost non-refrigeration type it is red
The preparation method of outer optical detector and a kind of non-refrigeration type infrared detector that absorptivity is high.
In order to achieve the above purpose, present invention employs the following technical solutions:
One substrate is provided；
Production forms first electrode layer over the substrate；
Production forms absorbed layer in the first electrode layer；
Production forms buffer layer on the absorbed layer；
Production forms transparent electrode layer on the buffer layer；
Production forms the second electrode lay on the transparent electrode layer,
The material of the absorbed layer is I B-, II B-, IV A-, VI A doped p-type material, and the material of the buffer layer is that N-type is partly led
Body material.
Preferably, I B is copper, and II B is any one or two kinds any, IV A in zinc, cadmium and mercury
For at least one of tin and lead, VI A is selenium or tellurium.
Preferably, using vacuum evaporation process, hot evaporation process, electron beam coating process, sputtering technology and chemical gaseous phase
Any one technique in depositing operation makes in the first electrode layer forms the absorbed layer.
Preferably, after the step of production forms absorbed layer in the first electrode layer, the preparation method further includes
The high temperature anneal is carried out to the absorbed layer.
Preferably, the method for carrying out the high temperature anneal to the absorbed layer specifically includes:
The absorption is placed in inert gas and reproducibility selenium atmosphere；
The absorbed layer is heated, the absorbed layer is made to be increased to 450 DEG C from room temperature with predetermined heat rate,
And maintained for the first predetermined time；
The absorbed layer is warming up to 480 DEG C~520 DEG C from 450 DEG C within second scheduled time, and maintains third predetermined
Time；
By the absorbed layer cooled to room temperature.
Preferably, the range of the predetermined heat rate is 3.5 DEG C/min~15 DEG C/min, and first predetermined time is
30 minutes, second predetermined time was 1 minute, and the third predetermined time is 15 minutes.
Preferably, the absorbed layer with a thickness of 1 μm to 1.5 μm.
Preferably, using in chemical thought technique, electron beam coating process, sputtering technology, atom layer deposition process
Any one make to form the buffer layer in the absorbed layer.
Preferably, the transparent electrode layer includes resistive formation and Window layer, and production forms transparent electricity on the buffer layer
The method of pole layer specifically includes:
Production forms resistive formation on the buffer layer；
Production forms Window layer on the resistive formation.
The present invention also provides a kind of non-refrigeration type infrared detectors, including substrate；First on the substrate
Electrode layer；Absorbed layer in the first electrode layer；Buffer layer on the absorbed layer；On the buffer layer
Transparent electrode layer；And the second electrode lay on the transparent electrode layer, the material of the absorption are I B-, II B-, IV A-
VI A doped p-type material, the material of the buffer layer are N-type semiconductor material.
The embodiment of the invention discloses a kind of preparation method of non-refrigeration type infrared detector, simple processes, cost
Cheap, non-refrigeration type infrared detector being made under lower bias additionally by this method can work, and extend infrared suction
The wavelength of receipts.
Detailed description of the invention
Figure 1A to Fig. 1 F is the process flow of the preparation method of the non-refrigeration type infrared detector of the embodiment of the present invention
Figure.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further described.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and do not have to
It is of the invention in limiting.
Figure 1A to Fig. 1 F shows a kind of preparation method process of non-refrigeration type infrared detector of the embodiment of the present invention
Figure comprising following steps:
Step 1: A referring to Fig.1 provides a substrate 10；
Specifically, rigid substrate or flexible substrate can be used in substrate 10, wherein rigid substrate can be used glass, ceramics,
Polymer substrate can be used in the substrate of the materials such as the metal of quartz and poorly conductive, flexible substrate, and PI (polyimides), PET are (poly-
Ethylene glycol terephthalate), the substrates of the materials such as PEN (polyethylene naphthalate), the size of substrate 10 is according to reality
Designed, designed is needed, in the present embodiment without limitation.
Step 2: B referring to Fig.1, production forms first electrode layer 20 on substrate 10；
As a preferred embodiment, substrate 10 is selected as glass substrate, and first electrode layer 20 is preferably metal molybdenum electrode, preferably adopts
Molybdenum electrode is grown on a glass substrate with electron beam coating process and forms first electrode layer 20, and the thickness of first electrode layer 20 is preferred
It is 1 μm, detector is measured infrared signal and be transmitted to extraneous instrument by first electrode layer 20 for being electrically connected extraneous test equipment
In.Certainly in other embodiments, it is heavy that sputtering technology, chemical vapor deposition process and Metallo-Organic Chemical Vapor also can be used
Any one in product technique deposits to molybdenum electrode in glass substrate, and in addition first electrode layer 20 also selects other metals electric
Pole, the thickness range of first electrode layer 20 are 0.8 μm to 1.3 μm.
Step 3: C referring to Fig.1, production forms absorbed layer 30 in first electrode layer 20；
Specifically, the material of absorbed layer 30 is p-type semiconductor material, for absorbing infrared light, it is preferred to use I B-, II B- IV
VI A doped p-type material of A-, wherein I B is preferably copper (Cu), II B is zinc (Zn), in cadmium (Cd) and mercury (Hg) any one or
Any two kinds of combinations of person, IV A are at least one of tin (Sn) and lead (Pb), and VI A is selenium (Se) or tellurium (Te).Using above-mentioned
Absorbed layer 30 made of P-type material has wider infrared Absorption wavelength, is conducive to manufacture high-performance detector.As preferred
Embodiment, II B are preferably cadmium and zinc, and IV A is preferably tin, and VI A is preferably selenium, and the chemical formula of the material of absorbed layer 30 is represented by
Cu2CdxZn1-xSnSe4, wherein each subscript indicates the ratio of each component, the value range of x is 0 to 1, including endpoint value,
In by regulation cadmium and zinc ratio, to regulate and control the energy band of absorbed layer 30, to control absorbed layer 30 to the absorption wave of infrared light
It is long.
In other embodiments, II B is preferably cadmium and zinc, and IV A is preferably tin, and VI A is preferably tellurium, the material of absorbed layer 30
The chemical formula of material is represented by Cu2CdxZn1-xSnTe4, wherein each subscript indicates that the ratio of each component, the value range of x are
0 to 1, including endpoint value.
Further, vacuum evaporation process, hot evaporation process, electron beam coating process, sputtering technology and chemistry can be used
Any one technique in gas-phase deposition deposits p-type polycrystalline Copper thin film in first electrode layer 20 and forms absorbed layer 30,
Middle sedimentation time is 45min, and the thickness of absorbed layer 30 is preferably 1.5 μm, and the thickness of certain absorbed layer 30 can also be other numerical value,
In the range of 1 μm to 1.5 μm.
Further, in order to enable the alloy material of absorbed layer 30 crystallizes, the deposit absorbent layer 30 in first electrode layer 20
Afterwards, the high temperature anneal is carried out to absorbed layer 30, specifically comprised the following steps:
(S1) absorbed layer 30 is placed in inert gas and reproducibility selenium atmosphere；(S2) absorbed layer 30 is carried out at heating
Reason, makes absorbed layer 30 be increased to 450 DEG C from room temperature by predetermined heat rate；And maintained for the first predetermined time；(S3) pre- second
Fix time it is interior absorbed layer 30 is warming up to 480 DEG C~520 DEG C from 450 DEG C, and maintain the third predetermined time；(S4) by absorbed layer 30
Cooled to room temperature.Wherein, inert gas can be selected argon gas, helium etc., the range of predetermined heat rate be 3.5 DEG C/min~
15℃/min.As a preferred embodiment, during being slowly heated to absorbed layer 30, the rate of heat addition in first time period is
15 DEG C/min, the rate of heat addition in second time period is 3.5 DEG C/min, and the total time of heating is 75min.As preferred implementation
Example, the first predetermined time are 30 minutes, and the second predetermined time was 1 minute, and the third predetermined time is 15 minutes.
Step 4: D referring to Fig.1, production forms buffer layer 40 on absorbed layer 30；
Specifically, buffer layer 40 is N-type semiconductor material, and cadmium sulfide can be used, mix zinc oxysulfide, zinc selenide, mix oxygen sulphur
Change any one in indium and indium trisulfide or a variety of production formation, buffer layer 40 and absorbed layer 30 constitute PN junction, extraneous
When Infrared irradiation absorbed layer 30 and buffer layer 40, electromotive force is formed between buffer layer 40 and absorbed layer 30, by the two and the external world
Circuit communication, PN junction then export electric current, and the power by measuring the electric current can be detected the power of infrared light.
As a preferred embodiment, buffer layer 40 is preferably cadmium sulfide, using chemical thought technique on absorbed layer 30
The cadmium sulfide layer that deposition thickness is 50 μm, forms buffer layer 40, and sedimentation time is 9.5 minutes.Certainly in other embodiments,
It electron beam coating process, sputtering technology, any one in atom layer deposition process also can be used is made in absorbed layer 30 and formed
Buffer layer 40, the thickness of buffer layer 40 can also choose other numerical value, in the range of 50 μm to 60 μm.
Step 5: E referring to Fig.1, production forms transparent electrode layer 50 on buffer layer 40；
Specifically, transparent electrode layer 50 includes resistive formation and Window layer, and intrinsic zinc oxide can be used in resistive formation, and Window layer can
Using in Al-Doped ZnO, Mg-doping ZnO, boron-doping zinc oxide, tin indium oxide and fluorine-doped tin oxide any one or it is a variety of
Material makes to be formed.Preferably, using the first deposition intrinsic zinc oxide on buffer layer 40 of sputtering technology, resistive formation is formed, then
Al-Doped ZnO is deposited on resistive formation using sputtering technology, forms Window layer, wherein the thickness range of resistive formation is 50 nanometers
To 80 nanometers, the thickness range of Window layer is 200 nanometers to 1 μm.Certainly in other embodiments, electron beam plating also can be used
Membrane process to form resistive formation and Window layer successively to make.Resistive formation can reduce leakage current generation, and it is in parallel to increase polycrystal film
Resistance, it can be used for collecting the electronics generated in PN junction, the electric current for exporting it is more concentrated.Window layer has good electricity
Performance and optical property, that is, high transparency, and low resistance make it be radiated at absorbed layer 30 gentle for passing through for extraneous infrared light
It rushes on layer 40.
Step 6: F referring to Fig.1, production forms the second electrode lay 60 on transparent electrode layer 50；
Specifically, the making material of the second electrode lay 60 is preferably metal electrode, it is preferred to use electron beam coating process exists
Nickel alumin(i)um alloy material is deposited on transparent electrode layer 50 and forms the second electrode lay 60, and the second electrode lay 60 is for being electrically connected extraneous test
Detector is measured infrared signal and is transmitted in extraneous instrument by instrument.Further, the second electrode lay 60 is located at transparent electrode layer
50 side can be reduced the second electrode lay 60 so that the second electrode lay 60 and the overlapping area of absorbed layer 30 are as small as possible in this way
Absorption to infrared light.When detecting infrared light, first electrode layer 20 and the second electrode lay 60 are electrically connected with external circuitry simultaneously
It connects, electric current is just exported into external circuitry in such buffer layer 40 and absorbed layer 30, can be detected out the power of infrared light.
The non-refrigeration type infrared light detecting to be formed is made of above-mentioned preparation method the embodiment of the invention also provides a kind of
Device comprising substrate 10；First electrode layer 20 on substrate 10；Absorbed layer 30 in first electrode layer 20；It is set to
Buffer layer 40 on absorbed layer 30；Transparent electrode layer 50 on buffer layer 40；And on transparent electrode layer 50
Two electrode layers 60, the material of absorbed layer 30 are I B-, II B-, IV A-, VI A doped p-type material, and the material of buffer layer 40 is that N-type is partly led
Body material.
The embodiment of the invention discloses a kind of preparation method of non-refrigeration type infrared detector, simple process is required
Equipment it is simpler, can large area production, low manufacture cost is, it can be achieved that civil nature, using I B-, II B-, IV A-, VI A doped p-type material
Material has widened the infrared Absorption wavelength of detector to make absorbed layer.
The above is only the specific embodiment of the application, it is noted that for the ordinary skill people of the art
For member, under the premise of not departing from the application principle, several improvements and modifications can also be made, these improvements and modifications are also answered
It is considered as the protection scope of the application.
Claims (5)
1. a kind of preparation method of non-refrigeration type infrared detector characterized by comprising
One substrate (10) are provided；
Production forms first electrode layer (20) on the substrate (10)；
Production forms absorbed layer (30) on the first electrode layer (20)；
Production forms buffer layer (40) on the absorbed layer (30)；
Production forms transparent electrode layer (50) on the buffer layer (40)；
Production forms the second electrode lay (60) on the transparent electrode layer (50),
The material of the absorbed layer (30) is I B-, II B-, IV A-, VI A doped p-type material, and the material of the buffer layer (40) is N-type
Semiconductor material；I B be copper, II B be zinc, cadmium and mercury in any one or it is two kinds any, IV A be tin
At least one of with lead, VI A is selenium or tellurium,
After the step of production forms absorbed layer (30) on the first electrode layer (20), the preparation method further includes to institute
It states absorbed layer (30) and carries out the high temperature anneal, the method for carrying out the high temperature anneal to the absorbed layer (30) specifically includes:
The absorbed layer (30) is placed in inert gas and reproducibility selenium atmosphere；
The absorbed layer (30) is heated, is increased to the absorbed layer (30) from room temperature with predetermined heat rate
450 DEG C, and maintained for the first predetermined time；
The absorbed layer (30) is warming up to 480 DEG C~520 DEG C from 450 DEG C within second scheduled time, and maintains third predetermined
Time；
By the absorbed layer (30) cooled to room temperature；
The range of the predetermined heat rate is 3.5 DEG C/min~15 DEG C/min, and first predetermined time is 30 minutes, described
Second predetermined time was 1 minute, and the third predetermined time is 15 minutes.
2. the preparation method of non-refrigeration type infrared detector according to claim 1, which is characterized in that steamed using vacuum
Any one technique in depositing process, hot evaporation process, electron beam coating process, sputtering technology and chemical vapor deposition process exists
Production forms the absorbed layer (30) on the first electrode layer (20).
3. the preparation method of non-refrigeration type infrared detector according to claim 1, which is characterized in that the absorbed layer
(30) with a thickness of 1 μm to 1.5 μm.
4. the preparation method of non-refrigeration type infrared detector according to claim 1, which is characterized in that use chemical water
Depositing operation, electron beam coating process, sputtering technology, any one in atom layer deposition process are bathed in the absorbed layer (30)
Production forms the buffer layer (40).
5. the preparation method of non-refrigeration type infrared detector according to claim 1, which is characterized in that the transparent electricity
Pole layer (50) includes resistive formation and Window layer, on the buffer layer (40) production formed transparent electrode layer (50) method it is specific
Include:
Production forms resistive formation on the buffer layer (40)；
Production forms Window layer on the resistive formation.
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