CN107967021A - A kind of control circuit of metal-oxide-semiconductor driving voltage - Google Patents
A kind of control circuit of metal-oxide-semiconductor driving voltage Download PDFInfo
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- CN107967021A CN107967021A CN201711429134.5A CN201711429134A CN107967021A CN 107967021 A CN107967021 A CN 107967021A CN 201711429134 A CN201711429134 A CN 201711429134A CN 107967021 A CN107967021 A CN 107967021A
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Classifications
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/62—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using bucking or boosting dc sources
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B19/00—Programme-control systems
- G05B19/02—Programme-control systems electric
- G05B19/04—Programme control other than numerical control, i.e. in sequence controllers or logic controllers
- G05B19/042—Programme control other than numerical control, i.e. in sequence controllers or logic controllers using digital processors
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05B—CONTROL OR REGULATING SYSTEMS IN GENERAL; FUNCTIONAL ELEMENTS OF SUCH SYSTEMS; MONITORING OR TESTING ARRANGEMENTS FOR SUCH SYSTEMS OR ELEMENTS
- G05B2219/00—Program-control systems
- G05B2219/20—Pc systems
- G05B2219/25—Pc structure of the system
- G05B2219/25257—Microcontroller
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Abstract
The embodiment of the invention discloses a kind of control circuit of metal-oxide-semiconductor driving voltage, which includes the first metal-oxide-semiconductor, regulator circuit and microcontroller chip, further includes booster circuit and the second metal-oxide-semiconductor；First output terminal of wherein microcontroller chip is connected with the grid of the second metal-oxide-semiconductor, and the on off state of the second metal-oxide-semiconductor is controlled for output control signal；Second output terminal of microcontroller chip is connected with booster circuit, for exporting square-wave signal；Drain electrode of the output terminal of booster circuit respectively with the grid and the second metal-oxide-semiconductor of the first metal-oxide-semiconductor is connected, for producing the target drives voltage of the first metal-oxide-semiconductor according to square-wave signal；Target drives voltage is combined with the on off state of the second metal-oxide-semiconductor, for controlling the on off state of the first metal-oxide-semiconductor.By using above-mentioned technical proposal, the driving voltage of the first metal-oxide-semiconductor gets a promotion.When the first metal-oxide-semiconductor turns on, its internal resistance reduces, resistance to temperature characterisitic enhancing, while has also reached the effect for reducing power consumption.
Description
Technical field
The present embodiments relate to control circuit field, more particularly to a kind of control circuit of metal-oxide-semiconductor driving voltage.
Background technology
Metal-oxide-semiconductor is component common in various control systems as switching device, and the electricity in circuit can be made using metal-oxide-semiconductor
Stream interrupts, turns on or flow in other circuits, so as to control the working status of electromechanical equipment.
Under normal circumstances, it is 5V for the supply voltage as most of electronic components such as metal-oxide-semiconductor based on professional standard.
For NPN type metal-oxide-semiconductor, as the voltage Vgs=5V between grid and source electrode, metal-oxide-semiconductor conducting；As Vgs=0V, metal-oxide-semiconductor closes
It is disconnected.
However, when the operating voltage of metal-oxide-semiconductor is 5V, the internal resistance of metal-oxide-semiconductor is larger, so cause the thermal power of metal-oxide-semiconductor compared with
Greatly.Operating current when if metal-oxide-semiconductor turns on is also larger, metal-oxide-semiconductor is easy to be burned out since thermal power is excessive.Meanwhile work as MOS
When the operating voltage of pipe is 5V, the internal resistance of metal-oxide-semiconductor be influenced by temperature it is also larger, i.e., when temperature has greatly changed, MOS
The internal resistance of pipe can also have greatly changed therewith, be unfavorable for the stabilization of metal-oxide-semiconductor performance.Work(when therefore, with reference to metal-oxide-semiconductor work
Consumption and resistance to temperature characterisitic, when the driving voltage of metal-oxide-semiconductor is 5V, the power consumption of metal-oxide-semiconductor is larger, at the same its heat resistance also compared with
Difference.
The content of the invention
To solve Related Technical Issues, the present invention provides a kind of control circuit of metal-oxide-semiconductor driving voltage so that metal-oxide-semiconductor
Driving voltage increase, and then the internal resistance of metal-oxide-semiconductor is reduced, lift the resistance to temperature characterisitic of metal-oxide-semiconductor.
To achieve the above object, the embodiment of the present invention adopts the following technical scheme that：
In a first aspect, an embodiment of the present invention provides a kind of control circuit of metal-oxide-semiconductor driving voltage, including：First MOS
Pipe, regulator circuit and microcontroller chip, wherein, further include：Booster circuit and the second metal-oxide-semiconductor；Wherein, the input of the regulator circuit
End is connected with power supply, and output terminal is connected with the microcontroller chip and the booster circuit respectively, for supply voltage to be converted into
Supply voltage, powers to the microcontroller chip and the booster circuit respectively；
First output terminal of the microcontroller chip is connected with the grid of second metal-oxide-semiconductor, for output control signal control
Make the on off state of second metal-oxide-semiconductor；Second output terminal of the microcontroller chip is connected with the booster circuit, for based on
The supply voltage exports square-wave signal；
The output terminal of the booster circuit respectively with the grid of first metal-oxide-semiconductor and the drain electrode phase of second metal-oxide-semiconductor
Even, for the target drives voltage according to square-wave signal generation first metal-oxide-semiconductor；The target drives voltage with it is described
The on off state of second metal-oxide-semiconductor is combined, for controlling the on off state of first metal-oxide-semiconductor.
Further, when the first output terminal of the microcontroller chip exports high level signal, second metal-oxide-semiconductor is led
It is logical；When the first output terminal of the microcontroller chip exports low level signal, the second metal-oxide-semiconductor shut-off.
Further, the booster circuit includes divider resistance, respectively with the grid of first metal-oxide-semiconductor and described second
The drain electrode of metal-oxide-semiconductor is connected；
When second metal-oxide-semiconductor turns on, the divider resistance is grounded by second metal-oxide-semiconductor, first metal-oxide-semiconductor
Shut-off；
When second metal-oxide-semiconductor turns off, first metal-oxide-semiconductor turns under the driving of the target drives voltage.
Further, the control circuit further includes：Motor, the drain electrode with first metal-oxide-semiconductor are connected；
When first metal-oxide-semiconductor turns on, the motor is controlled to rotate；
When first metal-oxide-semiconductor turns off, the motor stalls are controlled.
Further, the booster circuit is two voltage doubling rectifying circuit.
Further, the supply voltage of the circuit output end of pressure-stabilizing is 5V；By the two voltage doubling rectifying circuit, produce
The target drives voltage of first metal-oxide-semiconductor be 10V.
Further, the booster circuit includes：First capacitance, the second capacitance, the first diode and the second diode, its
In,
The anode of first diode is connected with the output terminal of the regulator circuit, the cathode of first diode with
The anode of second diode is connected；
Output terminal of the cathode of second diode as the booster circuit, passes through second capacity earth；
The input terminal of first capacitance is connected with the microcontroller chip, the anode phase of output terminal and second diode
Even.
Further, the regulator circuit is voltage-stablizer.
Further, first metal-oxide-semiconductor and second metal-oxide-semiconductor are NPN type metal-oxide-semiconductor.
In the technical solution of the embodiment of the present invention, the input terminal of regulator circuit is connected with power supply, output terminal respectively with micro-control
Chip is connected with booster circuit, for supply voltage to be converted into supply voltage, powers respectively to microcontroller chip and booster circuit.
By the way that the first output terminal of microcontroller chip is connected with the grid of the second metal-oxide-semiconductor, the second metal-oxide-semiconductor is controlled for output control signal
On off state.By the way that the second output terminal of microcontroller chip is connected with booster circuit, for exporting square wave based on supply voltage
Signal.Drain electrode of the output terminal of booster circuit respectively with the grid and the second metal-oxide-semiconductor of the first metal-oxide-semiconductor is connected, for according to square wave
Signal produces the target drives voltage of the first metal-oxide-semiconductor；Target drives voltage is combined with the on off state of the second metal-oxide-semiconductor, is used for
Control the on off state of the first metal-oxide-semiconductor.By using above-mentioned technical proposal, the target drives voltage of driving the first metal-oxide-semiconductor conducting
Effectively lifted relative to the driving voltage of the prior art, when the first metal-oxide-semiconductor turns on, its internal resistance reduces, the first metal-oxide-semiconductor
Resistance to temperature characterisitic enhancing, and then be conducive to the stabilization of the first metal-oxide-semiconductor performance.In addition, the reduction of the first metal-oxide-semiconductor internal resistance also can reach
Reduce the effect of power consumption.
Brief description of the drawings
To describe the technical solutions in the embodiments of the present invention more clearly, institute in being described below to the embodiment of the present invention
Attached drawing to be used is needed to be briefly described, it should be apparent that, drawings in the following description are only some implementations of the present invention
Example, for those of ordinary skill in the art, without creative efforts, can also implement according to the present invention
The content of example and these attached drawings obtain other attached drawings.
Fig. 1 is a kind of structure diagram of the control circuit for metal-oxide-semiconductor driving voltage that the embodiment of the present invention one provides；
Fig. 2 is a kind of control circuit schematic diagram for preferable metal-oxide-semiconductor driving voltage that the embodiment of the present invention one provides；
Fig. 3 is a kind of schematic diagram of booster circuit provided by Embodiment 2 of the present invention.
Embodiment
For make present invention solves the technical problem that, the technical solution that uses and the technique effect that reaches it is clearer, below
The technical solution of the embodiment of the present invention will be described in further detail with reference to attached drawing, it is clear that described embodiment is only
It is part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, those skilled in the art exist
All other embodiments obtained under the premise of creative work are not made, belong to the scope of protection of the invention.
Embodiment one
Fig. 1 is a kind of structure diagram of the control circuit for metal-oxide-semiconductor driving voltage that the embodiment of the present invention one provides.Such as figure
Shown in 1, which includes the first metal-oxide-semiconductor 110, regulator circuit 120, microcontroller chip 130, booster circuit 140 and second
Metal-oxide-semiconductor 150.Wherein,
The input terminal of regulator circuit 120 is connected with power supply, output terminal respectively with 140 phase of microcontroller chip 130 and booster circuit
Even, for supply voltage to be converted into supply voltage, power respectively to microcontroller chip 130 and booster circuit 140.
First output terminal of microcontroller chip 130 is connected with the grid of the second metal-oxide-semiconductor 150, is controlled for output control signal
The on off state of second metal-oxide-semiconductor 150；Second output terminal of microcontroller chip 130 is connected with booster circuit 140, for based on power supply
Voltage output square-wave signal.
Drain electrode of the output terminal of booster circuit 140 respectively with the grid and the second metal-oxide-semiconductor 150 of the first metal-oxide-semiconductor 110 is connected,
For producing the target drives voltage of the first metal-oxide-semiconductor 110 according to square-wave signal.The switch of target drives voltage and the second metal-oxide-semiconductor
State is combined, for controlling the on off state of the first metal-oxide-semiconductor 110.
Exemplary, microcontroller chip can be such as microcontroller micro-control unit.The first output terminal output of microcontroller chip
Control signal can be similar to square-wave signal low and high level signal, for control the second metal-oxide-semiconductor turn-on and turn-off.Example
Such as, when the first output terminal of microcontroller chip exports high level signal, the conducting of the second metal-oxide-semiconductor；When the first output of microcontroller chip
During the output low level signal of end, the shut-off of the second metal-oxide-semiconductor.
Exemplary, booster circuit can be two voltage doubling rectifying circuit, you can with by relatively low alternating voltage, by pressure-resistant
Higher rectifier diode and capacitor, obtains a higher DC voltage.And if the input of two voltage doubling rectifying circuit is
During DC voltage, then effect of the two voltage doubling rectifying circuit played in control circuit is：Lift two voltage doubling rectifying circuit
Output voltage so that output voltage increases to two times of input voltage.For example, when the supply voltage of circuit output end of pressure-stabilizing is 5V
When, by two voltage doubling rectifying circuit, the target drives voltage of the first metal-oxide-semiconductor of output is 10V.Therefore, voltage-doubler rectification is passed through
Circuit, the driving voltage of the first metal-oxide-semiconductor are effectively lifted.When the driving voltage of the first metal-oxide-semiconductor is carried by 5V of the prior art
When being raised to 10V (i.e. Vgs=10V), the internal resistance of the first metal-oxide-semiconductor can obtain effective reduction, for example, original internal resistance can be reduced to
1/5th.According to the temperature-resistance characteristic of metal-oxide-semiconductor, when the Vgs of the first metal-oxide-semiconductor is 10V, the internal resistance of metal-oxide-semiconductor varies with temperature simultaneously
Unobvious.When temperature varies widely, its internal resistance can also keep stabilization that is stable, and then enhancing the first metal-oxide-semiconductor performance
Property.If in addition, first metal-oxide-semiconductor is applied to automobile when powerful scene, the reduction of the first metal-oxide-semiconductor internal resistance can also have
Effect reduces the power consumption of the first metal-oxide-semiconductor, so as to reduce the caloric value of the first metal-oxide-semiconductor, reduces the risk that the first metal-oxide-semiconductor is burnt.
Further, Fig. 2 is that a kind of control circuit for preferable metal-oxide-semiconductor driving voltage that the embodiment of the present invention one provides is shown
It is intended to.As shown in Fig. 2, the regulator circuit 120 in the embodiment of the present invention is voltage-stablizer, it is microcontroller chip 130 which, which is used for,
The supply voltage of stabilization is provided with two voltage doubling rectifying circuit 140.Booster circuit in the present embodiment may include divider resistance R1 and
Two voltage doubling rectifying circuit 140, as shown in Fig. 2, one end of divider resistance R1 is connected with two voltage doubling rectifying circuit 140, the other end
The drain electrode with the grid and the second metal-oxide-semiconductor 150 of the first metal-oxide-semiconductor 110 is connected respectively.When the second metal-oxide-semiconductor turns on, divider resistance R1
It is grounded by the second metal-oxide-semiconductor, at this time, the shut-off of the first metal-oxide-semiconductor；When the second metal-oxide-semiconductor turns off, the first metal-oxide-semiconductor is in target drives electricity
Turned under the driving of pressure.
Further, control circuit provided in an embodiment of the present invention can be used in the control of motor.As shown in Fig. 2, motor
160 are connected with the drain electrode of the first metal-oxide-semiconductor 110.When the first metal-oxide-semiconductor 110 turns on, motor 160 can be controlled to rotate；When first
When metal-oxide-semiconductor 110 turns off, motor 160 can be controlled to stop operating.
Further, the first metal-oxide-semiconductor and the second metal-oxide-semiconductor all can be NPN type metal-oxide-semiconductors.
An embodiment of the present invention provides a kind of control circuit of metal-oxide-semiconductor driving voltage, by defeated by the second of microcontroller chip
Outlet is connected with booster circuit, and the exportable square-wave signal of microcontroller chip can control booster circuit to export the first metal-oxide-semiconductor grid
Target drives voltage.The driving voltage of the metal-oxide-semiconductor provided relative to the prior art, the embodiment of the present invention is on the basis of the prior art
On by increasing booster circuit, may be such that the target drives voltage of the first metal-oxide-semiconductor grid is more than the driving electricity that the prior art provides
Pressure.When the first metal-oxide-semiconductor turns on, may be such that the internal resistance of the first metal-oxide-semiconductor reduces, and improves the temperature-resistance characteristic of the first metal-oxide-semiconductor.This
Outside, the increase of the first metal-oxide-semiconductor driving voltage also can reach the effect for the power consumption for effectively reducing the first metal-oxide-semiconductor.
Embodiment two
The present embodiment is carried to having carried out further refinement, Fig. 3 on the basis of above-described embodiment for the embodiment of the present invention two
A kind of schematic diagram of the booster circuit supplied, the booster circuit in the present embodiment carry out specifically by taking two voltage doubling rectifying circuit as an example
It is bright.As shown in figure 3, the booster circuit includes：First capacitance C1, the second capacitance C2, the first diode D1 and the second diode D2,
Wherein,
The anode of first diode D1 is connected with the output terminal of regulator circuit, the cathode of the first diode D1 and the two or two pole
The anode of pipe D2 is connected；Output terminal of the cathode of second diode D2 as booster circuit, is grounded by the second capacitance C2；First
The input terminal of capacitance C1 is connected with microcontroller chip (being MCU shown in figure), and second end is connected with the anode of the second diode D2.
Exemplary, the voltage of circuit output end of pressure-stabilizing is 5V in the present embodiment, by the two voltage doubling rectifying circuit, second
The voltage (i.e. the output voltage of two voltage doubling rectifying circuit) at capacitance both ends is 10V.
Specifically, the concrete operating principle of the booster circuit provided in the present embodiment is as follows：When MCU exports low level signal
When, the first diode D1 and the second diode D2 are both turned on, and regulator circuit is output to the voltage of the first diode D1 anodes (in figure
For 5V), charged by the first diode D1 and the second diode D2 to the first capacitance C1 and the second capacitance C2, until being charged to
5V.In addition the voltage on the first capacitance C1 left sides is 0V, and the voltage on the right is 5V.
When MCU exports high level, the voltage difference at the first capacitance C1 both ends cannot be mutated, then the voltage on the first capacitance left side
For 5V, the right voltage is 10V.At this time, since the voltage (5V) of the first diode D1 anodes is less than the voltage (10V) of cathode, because
This, the first diode D1 is not turned on.Voltage on the right of first capacitance C1 is charged by the second diode D2 for the second capacitance C2, directly
To being charged to 10V.When the voltage at the second capacitance C2 both ends is 10V, since the voltage of the second diode D2 anodes and cathode is equal
For 10V, therefore, the second diode D2 cut-offs.At this time, the voltage of booster circuit output is 10V.
It should be noted that the voltage at the second capacitance of several cycles both ends that square-wave signal starts can not be really achieved
10V, but since MCU exports square-wave signal to booster circuit, after several cycles, the electricity at the second capacitance both ends always
Pressure can gradually be stabilized to 10V, i.e., the constant voltage that booster circuit exports is 10V, namely the target drives voltage of the first metal-oxide-semiconductor
It is increased to 10V.When the first metal-oxide-semiconductor turns on, since the voltage of (Vgs) between the first metal-oxide-semiconductor grid and source electrode is 10V, at this time,
When relative to Vgs being 5V, the internal resistance of the first metal-oxide-semiconductor is effectively reduced, the temperature-resistance characteristic enhancing of the first metal-oxide-semiconductor, while its work(
Consumption is also effectively reduced.
The present embodiment refines above-described embodiment, if the voltage of circuit output end of pressure-stabilizing is 5V, passes through boosting
Circuit, can export the burning voltage of 10V, the target drives voltage as the first metal-oxide-semiconductor.When the first metal-oxide-semiconductor turns on, in it
Resistance is effectively reduced, and has been reached the temperature-resistance characteristic of the first metal-oxide-semiconductor of enhancing and has been reduced the effect of the first metal-oxide-semiconductor power consumption.
Note that it above are only presently preferred embodiments of the present invention and institute's application technology principle.It will be appreciated by those skilled in the art that
The invention is not restricted to specific embodiment described here, can carry out for a person skilled in the art various obvious changes,
Readjust and substitute without departing from protection scope of the present invention.Therefore, although being carried out by above example to the present invention
It is described in further detail, but the present invention is not limited only to above example, without departing from the inventive concept, also
It can include other more equivalent embodiments, and the scope of the present invention is determined by scope of the appended claims.
Claims (9)
1. a kind of control circuit of metal-oxide-semiconductor driving voltage, including：First metal-oxide-semiconductor, regulator circuit and microcontroller chip, its feature exist
In further including：Booster circuit and the second metal-oxide-semiconductor；Wherein,
The input terminal of the regulator circuit is connected with power supply, output terminal respectively with the microcontroller chip and the booster circuit phase
Even, for supply voltage to be converted into supply voltage, power respectively to the microcontroller chip and the booster circuit；
First output terminal of the microcontroller chip is connected with the grid of second metal-oxide-semiconductor, and institute is controlled for output control signal
State the on off state of the second metal-oxide-semiconductor；Second output terminal of the microcontroller chip is connected with the booster circuit, for based on described
Supply voltage exports square-wave signal；
Drain electrode of the output terminal of the booster circuit respectively with the grid and second metal-oxide-semiconductor of first metal-oxide-semiconductor is connected, and uses
In the target drives voltage that first metal-oxide-semiconductor is produced according to the square-wave signal；The target drives voltage and described second
The on off state of metal-oxide-semiconductor is combined, for controlling the on off state of first metal-oxide-semiconductor.
2. control circuit according to claim 1, it is characterised in that：
When the first output terminal of the microcontroller chip exports high level signal, the second metal-oxide-semiconductor conducting；
When the first output terminal of the microcontroller chip exports low level signal, the second metal-oxide-semiconductor shut-off.
3. control circuit according to claim 1, it is characterised in that the booster circuit includes divider resistance, respectively with
The drain electrode of the grid of first metal-oxide-semiconductor and second metal-oxide-semiconductor is connected；
When second metal-oxide-semiconductor turns on, the divider resistance is grounded by second metal-oxide-semiconductor, and first metal-oxide-semiconductor closes
It is disconnected；
When second metal-oxide-semiconductor turns off, first metal-oxide-semiconductor turns under the driving of the target drives voltage.
4. control circuit according to claim 1, it is characterised in that further include：
Motor, the drain electrode with first metal-oxide-semiconductor are connected；
When first metal-oxide-semiconductor turns on, the motor is controlled to rotate；
When first metal-oxide-semiconductor turns off, the motor stalls are controlled.
5. control circuit according to claim 1, it is characterised in that：
The booster circuit is two voltage doubling rectifying circuit.
6. control circuit according to claim 5, it is characterised in that：
The supply voltage of the circuit output end of pressure-stabilizing is 5V；
By the two voltage doubling rectifying circuit, the target drives voltage of first metal-oxide-semiconductor of generation is 10V.
7. control circuit according to claim 1, it is characterised in that the booster circuit includes：First capacitance, the second electricity
Appearance, the first diode and the second diode, wherein,
The anode of first diode is connected with the output terminal of the regulator circuit, the cathode of first diode with it is described
The anode of second diode is connected；
Output terminal of the cathode of second diode as the booster circuit, passes through second capacity earth；
The first end of first capacitance is connected with the microcontroller chip, and second end is connected with the anode of second diode.
8. control circuit according to claim 1, it is characterised in that：
The regulator circuit includes voltage-stablizer.
9. control circuit according to claim 1, it is characterised in that：
First metal-oxide-semiconductor and second metal-oxide-semiconductor are NPN type metal-oxide-semiconductor.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201711429134.5A CN107967021B (en) | 2017-12-26 | 2017-12-26 | Control circuit of MOS tube driving voltage |
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| CN201711429134.5A CN107967021B (en) | 2017-12-26 | 2017-12-26 | Control circuit of MOS tube driving voltage |
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| US11177770B2 (en) | 2019-06-14 | 2021-11-16 | Changshu Friends Connector Technology Co., Ltd. | Controllable system for shutting down connection between photovoltaic panels |
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| US20150366031A1 (en) * | 2014-06-17 | 2015-12-17 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Boost circuits, led backlight driving circuits and liquid crystal devices |
| CN106024521A (en) * | 2016-07-05 | 2016-10-12 | 广州金升阳科技有限公司 | Coil control circuit of contactor |
| CN206461521U (en) * | 2016-11-15 | 2017-09-01 | 惠州市蓝微新源技术有限公司 | A kind of PWM DC voltage circuits |
| CN207623826U (en) * | 2017-12-26 | 2018-07-17 | 华景传感科技（无锡）有限公司 | A kind of control circuit of metal-oxide-semiconductor driving voltage |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11177770B2 (en) | 2019-06-14 | 2021-11-16 | Changshu Friends Connector Technology Co., Ltd. | Controllable system for shutting down connection between photovoltaic panels |
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