CN107962313B - 半导体装置用接合线 - Google Patents

半导体装置用接合线 Download PDF

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Publication number
CN107962313B
CN107962313B CN201711344468.2A CN201711344468A CN107962313B CN 107962313 B CN107962313 B CN 107962313B CN 201711344468 A CN201711344468 A CN 201711344468A CN 107962313 B CN107962313 B CN 107962313B
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China
Prior art keywords
bonding wire
wire
concentration
semiconductor device
bonding
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CN201711344468.2A
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Chinese (zh)
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CN107962313A (zh
Inventor
山田隆
小田大造
榛原照男
大石良
斋藤和之
宇野智裕
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Nippon Steel & Sumitomo New Materials Co ltd
Nippon Steel Chemical and Materials Co Ltd
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Nippon Steel and Sumikin Chemical Co Ltd
Nippon Steel Chemical and Materials Co Ltd
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Priority claimed from PCT/JP2015/070861 external-priority patent/WO2016203659A1/ja
Application filed by Nippon Steel and Sumikin Chemical Co Ltd, Nippon Steel Chemical and Materials Co Ltd filed Critical Nippon Steel and Sumikin Chemical Co Ltd
Priority to CN201711344468.2A priority Critical patent/CN107962313B/zh
Priority claimed from PCT/JP2016/064926 external-priority patent/WO2016203899A1/ja
Publication of CN107962313A publication Critical patent/CN107962313A/zh
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    • B23K35/00Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0227Rods, wires
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y10T428/12875Platinum group metal-base component
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    • Y10T428/12889Au-base component
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CN113088837A (zh) * 2021-04-15 2021-07-09 江西富鸿金属有限公司 一种医疗用高弹性镀锡合金线及其制备方法
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009140953A (ja) * 2007-12-03 2009-06-25 Nippon Steel Materials Co Ltd 半導体装置用ボンディングワイヤ
JP2009140942A (ja) * 2007-12-03 2009-06-25 Nippon Steel Materials Co Ltd 半導体装置用ボンディングワイヤ
WO2011013527A1 (ja) * 2009-07-30 2011-02-03 新日鉄マテリアルズ株式会社 半導体用ボンディングワイヤー
JP2012036490A (ja) * 2010-08-11 2012-02-23 Tanaka Electronics Ind Co Ltd ボールボンディング用金被覆銅ワイヤ
JP2012089685A (ja) * 2010-10-20 2012-05-10 Hitachi Cable Ltd 銅ボンディングワイヤ及び銅ボンディングワイヤの製造方法

Family Cites Families (4)

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Publication number Priority date Publication date Assignee Title
US8389860B2 (en) * 2007-12-03 2013-03-05 Nippon Steel Materials Co., Ltd. Bonding wire for semiconductor devices
KR20120118485A (ko) * 2010-01-27 2012-10-26 스미토모 베이클리트 컴퍼니 리미티드 반도체 장치
JP5550369B2 (ja) * 2010-02-03 2014-07-16 新日鉄住金マテリアルズ株式会社 半導体用銅ボンディングワイヤとその接合構造
TW201430977A (zh) * 2013-01-23 2014-08-01 Heraeus Materials Tech Gmbh 用於接合應用的經塗覆線材

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009140953A (ja) * 2007-12-03 2009-06-25 Nippon Steel Materials Co Ltd 半導体装置用ボンディングワイヤ
JP2009140942A (ja) * 2007-12-03 2009-06-25 Nippon Steel Materials Co Ltd 半導体装置用ボンディングワイヤ
WO2011013527A1 (ja) * 2009-07-30 2011-02-03 新日鉄マテリアルズ株式会社 半導体用ボンディングワイヤー
JP2012036490A (ja) * 2010-08-11 2012-02-23 Tanaka Electronics Ind Co Ltd ボールボンディング用金被覆銅ワイヤ
JP2012089685A (ja) * 2010-10-20 2012-05-10 Hitachi Cable Ltd 銅ボンディングワイヤ及び銅ボンディングワイヤの製造方法

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