CN107946343A - Dot structure and oled panel - Google Patents
Dot structure and oled panel Download PDFInfo
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- CN107946343A CN107946343A CN201711129495.8A CN201711129495A CN107946343A CN 107946343 A CN107946343 A CN 107946343A CN 201711129495 A CN201711129495 A CN 201711129495A CN 107946343 A CN107946343 A CN 107946343A
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- 238000004020 luminiscence type Methods 0.000 claims abstract description 26
- 239000010409 thin film Substances 0.000 claims description 32
- 239000010408 film Substances 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 12
- 239000013078 crystal Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000010276 construction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000012780 transparent material Substances 0.000 description 3
- 239000003086 colorant Substances 0.000 description 2
- 241001062009 Indigofera Species 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 235000021384 green leafy vegetables Nutrition 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/32—Stacked devices having two or more layers, each emitting at different wavelengths
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Abstract
The embodiment of the present invention provides a kind of dot structure and oled panel.The dot structure includes at least two layers stacked structure, includes one or two sub-pixel structure per Rotating fields；Each sub-pixel structure includes luminescence unit and the light-emitting surface positioned at luminescence unit and the first electrode and second electrode with light-emitting surface opposite side；Insulating layer is provided between adjacent two layers sub-pixel structure.
Description
Technical field
The present invention relates to microelectronics and optoelectronic semiconductor field, in particular to a kind of dot structure and oled panel.
Background technology
In existing OLED technology, the dot structure arrangement mode generally mode arrange of printing in the same plane,
But arrangement mode shows OLED high-resolution, the deficiency of resolution ratio is particularly shown in micro display technology, or in light
Occurs the separated phenomenon of sub-pixel under system, and it is little to improve space.Therefore the dot structure of OLED also needs to further change
Into.
The content of the invention
In view of this, the purpose of the embodiment of the present invention is to provide a kind of dot structure and oled panel.
A kind of dot structure provided in an embodiment of the present invention, the dot structure include at least two layers stacked structure, often
Rotating fields include one or two sub-pixel structure；
Each sub-pixel structure include luminescence unit and light-emitting surface positioned at luminescence unit and with light-emitting surface opposite side
First electrode and second electrode；
Insulating layer is provided between adjacent two layers sub-pixel structure.
Preferably, the second electrode of each sub-pixel structure is connected with thin film transistor (TFT) respectively, to receive by described thin
The drive signal of film transistor transmission, controls corresponding luminescence unit to shine.
Preferably, the film crystal connected with the second electrode of the corresponding sub-pixel structure being stacked in adjacent two layers structure
Pipe is arranged at dot structure the same side, and shielded layer is provided between the two neighboring thin film transistor (TFT).
Shielded layer is set effectively to prevent from influencing each other between two neighboring thin film transistor (TFT) between thin film transistor (TFT),
Preferably, a sub-pixel structure is set in every Rotating fields, connects with the second electrode of adjacent two layers sub-pixel structure
The two different thin film transistor (TFT)s connect are arranged at dot structure opposite sides.
Two thin film transistor (TFT)s are arranged on the opposite both sides of dot structure can effectively prevent two thin film transistor (TFT)s
Between influence each other.
Preferably, the dot structure includes three-decker, includes a sub-pixel structure per Rotating fields；Or；
The dot structure includes three-decker, and the first Rotating fields and the second Rotating fields include a sub-pixel knot respectively
Structure, third layer structure include two sub-pixel structures；Alternatively,
The dot structure includes double-layer structure, and the first Rotating fields and the second Rotating fields include two sub-pixel knots respectively
Structure；Alternatively,
The dot structure includes double-layer structure, and the first Rotating fields include a sub-pixel structure, and the second Rotating fields include
Two sub-pixel structures；Alternatively,
The dot structure includes four-layer structure, includes a sub-pixel structure per Rotating fields.
Five kinds of above-mentioned structures, the luminescence unit of every kind of dot structure form completely stacked or overlapping portions, make pixel knot
The resolution ratio higher of structure, the size of dot structure also relatively existing dot structure smaller.
Preferably, the insulating layer, first electrode and second electrode are transparent material.
By the way that the insulating layer, first electrode and second electrode can be prevented insulating layer, first electrode for transparent material
Other layers of light is blocked with second electrode.
Preferably, the electrode farthest apart from light-emitting surface is the electrode with reflection function, described farthest apart from light-emitting surface
Electrode is first electrode or second electrode；Alternatively,
The dot structure further includes reflecting layer, and the reflecting layer is arranged far from the side of light-emitting surface.
Light can be reduced by the effect in reflecting layer to omit, and make the display effect of pixel unit more preferable.
Preferably, the luminescence unit of the dot structure includes blue-light-emitting unit and emitting red light unit；The blueness
The corresponding sub-pixel structure of luminescence unit is positioned close in a Rotating fields of light-emitting surface；The corresponding son of the emitting red light unit
Dot structure is set in a Rotating fields farthest apart from light-emitting surface.
Since blue light is the shortest light of three primary colors wavelength, the wavelength of feux rouges is the longest light of three primary colors wavelength, therefore by indigo plant
The corresponding luminescence unit of light is arranged on the position nearest apart from light-emitting surface, and the corresponding luminescence unit of feux rouges is arranged on apart from light-emitting surface
Farthest position, due to the difference of different luminescent material energy gaps, it is possible to reduce the light absorbs between luminescence unit, improve pixel list
The display effect of member.
The embodiment of the present invention also provides a kind of oled panel, and the oled panel includes multiple above-mentioned dot structure battle arrays
Arrange, the first electrode in each Rotating fields of all pixels structure of the oled panel forms an entirety, forms multilayer first
Electrode layer.
Preferably, the oled panel further includes conductive structure, and the conductive structure electrically connects multilayer first electrode layer
Connect.
Multilayer first electrode layer is electrically connected, can use multilayer first electrode layer is unified to be grounded, OLED can be used
The manufacture craft of panel is simpler.
Compared with prior art, dot structure and oled panel provided in an embodiment of the present invention, by by the pixel knot
Structure is arranged to sandwich construction, can make the smaller of dot structure, resolution ratio also higher.
To enable the above objects, features and advantages of the present invention to become apparent, preferred embodiment cited below particularly, and coordinate
Appended attached drawing, is described in detail below.
Brief description of the drawings
In order to illustrate the technical solution of the embodiments of the present invention more clearly, below will be to needed in the embodiment attached
Figure is briefly described, it will be appreciated that the following drawings illustrate only certain embodiments of the present invention, therefore be not construed as pair
The restriction of scope, for those of ordinary skill in the art, without creative efforts, can also be according to this
A little attached drawings obtain other relevant attached drawings.
Fig. 1 is the schematic diagram for the dot structure that first embodiment of the invention provides.
Fig. 2 is the schematic diagram for the dot structure that second embodiment of the invention provides.
Fig. 3 is the schematic diagram for the dot structure that third embodiment of the invention provides.
Fig. 4 is the schematic diagram for the dot structure that fourth embodiment of the invention provides.
Fig. 5 is the arrangement signal that two sub-pixel structures are set in a Rotating fields of the dot structure that invention preferably provides
Figure.
Fig. 6 is the arrangement signal that two sub-pixel structures are set in a Rotating fields of the dot structure that invention preferably provides
Figure.
Fig. 7 is the schematic diagram for the dot structure that fifth embodiment of the invention provides.
Fig. 8 is the schematic diagram for the dot structure that sixth embodiment of the invention provides.
Fig. 9 is the schematic diagram for the dot structure that seventh embodiment of the invention provides.
Figure 10 is the decomposition diagram for the oled panel that eighth embodiment of the invention provides.
Icon：100- dot structures；110- first electrodes；112- second electrodes；114- blue-light-emitting units；116- greens
Luminescence unit；118- emitting red light units；120- insulating layers；122- thin film transistor (TFT)s；1221- first film transistors；1222-
Second thin film transistor (TFT)；The 3rd thin film transistor (TFT)s of 1223-；124- pixel defining layers；126- shielded layers；128- reflecting layer；130-
Conductive structure；The white luminous units of 132-.
Embodiment
Below in conjunction with attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete
Ground describes, it is clear that described embodiment is only part of the embodiment of the present invention, instead of all the embodiments.Usually exist
The component of the embodiment of the present invention described and illustrated in attached drawing can be arranged and designed with a variety of configurations herein.Cause
This, the detailed description of the embodiment of the present invention to providing in the accompanying drawings is not intended to limit claimed invention below
Scope, but it is merely representative of the selected embodiment of the present invention.Based on the embodiment of the present invention, those skilled in the art are not doing
Go out all other embodiments obtained on the premise of creative work, belong to the scope of protection of the invention.
It should be noted that：Similar label and letter represents similar terms in following attached drawing, therefore, once a certain Xiang Yi
It is defined, then it further need not be defined and explained in subsequent attached drawing in a attached drawing.Meanwhile the present invention's
In description, term " first ", " second " etc. are only used for distinguishing description, and it is not intended that instruction or hint relative importance.
In description of the invention, it is necessary to explanation, the orientation or position of the instruction such as term " on ", " under ", " interior ", " outer "
Relation is based on orientation shown in the drawings or position relationship, or the orientation or position usually visited during the invention product use
Relation is put, it is of the invention necessary with simplified description, rather than the device or element of instruction or hint meaning to be for only for ease of description
With specific orientation, with specific azimuth configuration and operation, therefore cannot be construed to the present invention limitation.
In description of the invention, it is also necessary to explanation, unless otherwise clearly defined and limited, term " setting ", " peace
Dress ", " connection " should be interpreted broadly, for example, it may be being fixedly connected or being detachably connected, or be integrally connected；Can
To be mechanical connection or be electrically connected；Can be directly connected to or be indirectly connected with by intermediary, can be with
It is the connection inside two elements.For the ordinary skill in the art, it can understand that above-mentioned term exists with concrete condition
Concrete meaning in the present invention.
Fig. 1 is the schematic diagram for the dot structure 100 that present pre-ferred embodiments provide.As shown in Figure 1, the dot structure
100 include at least two layers stacked structure, include one or two sub-pixel structure per Rotating fields.Each sub-pixel structure includes
Luminescence unit and the light-emitting surface positioned at luminescence unit and the first electrode 110 and second electrode 112 with light-emitting surface opposite side.Phase
Insulating layer 120 is provided between adjacent two layers of sub-pixel structure.
In a kind of embodiment, as shown in Figure 1, the first electrode 110 may be provided at close to the side of light-emitting surface, second
Electrode 112 is arranged far from the side of light-emitting surface.In another embodiment, the first electrode 110 may be provided at remote
The side of light-emitting surface, second electrode 112 are positioned close to the side of light-emitting surface.
In the present embodiment, the luminescence unit can be blue-light-emitting unit 114, green emitting unit 116, emitting red light
Unit 118 or white luminous unit 132.
In the present embodiment, the periphery of each luminescence unit can be provided with pixel defining layer 124.It can be effectively prevented from phase
Adjacent luminescence unit influences each other.
In the present embodiment, the second electrode 112 is driving electrodes.The second electrode 112 of each sub-pixel structure is distinguished
It is connected with thin film transistor (TFT) 122, to receive the drive signal transmitted by the thin film transistor (TFT) 122, controls corresponding shine
Unit shines.
In one embodiment, as shown in Figure 1, the second electrode 112 in every Rotating fields of the dot structure 100 is divided
It is not connected with a thin film transistor (TFT) 122.As shown in Figure 1, the corresponding second electrode 112 of blue-light-emitting unit 114 is connected with first
Thin film transistor (TFT) 1221；The corresponding second electrode 112 of green emitting unit 116 is connected with the second thin film transistor (TFT) 1222；It is red
The corresponding second electrode 112 of luminescence unit 118 is connected with the 3rd thin film transistor (TFT) 1223.
In another embodiment, as shown in Fig. 2, being provided with via in the second electrode 112, in every Rotating fields
Second electrode 112 is connected respectively by conductive structure with the multiple thin film transistor (TFT)s 122 being disposed therein in a Rotating fields.Also
It is to say the corresponding thin film transistor (TFT) 122 of each layer of second electrode 112 being disposed therein in a Rotating fields.
Those skilled in the art can set the quantity of the thin film transistor (TFT) 122 according to demand.
In the present embodiment, the dot structure 100 includes three-decker, includes a sub-pixel structure per Rotating fields.
As shown in Fig. 1 or 3, Fig. 1 and Fig. 3 are the dot structure 100 of the three-decker of two different structures.Blue hair is shown in Fig. 1
The structure that light unit 114, green emitting unit 116 are completely superposed with emitting red light unit 118.Blue-light-emitting is shown in Fig. 3
The structure that unit 114, green emitting unit 116 are not exclusively overlapped with emitting red light unit 118.
In one embodiment, as shown in Figure 1, first electrode 110, second of the dot structure close to light-emitting surface side is electric
Pole 112 and blue-light-emitting unit 114 can cover the first film transistor 1221.Dot structure can be made by above-mentioned setting
Arrangement it is compacter, reduce influence of the gap area to visual.
In the present embodiment, connected with the second electrode 112 of the corresponding sub-pixel structure being stacked in adjacent two layers structure
Thin film transistor (TFT) 122 is arranged at 100 the same side of dot structure, and shielding is provided between the two neighboring thin film transistor (TFT) 122
Layer 126.
In one embodiment, as shown in Figure 1, the shielded layer 126 is made as between adjacent two layers sub-pixel structure
Insulating layer 120 on 122 corresponding position of thin film transistor (TFT), for example, 1221 and second film crystal of first film transistor
Shielded layer 126, the second thin film transistor (TFT) 1222 and the 3rd thin film transistor (TFT) 1223 are provided with insulating layer 120 between pipe 1222
Between insulating layer 120 on be provided with shielded layer 126.In another embodiment, the shielded layer 126 is built in described thin
In film transistor 122, for example, the side in first film transistor 1221 close to second film crystal is provided with shielded layer
126, the side on the second thin film transistor (TFT) 1222 close to the 3rd film crystal is provided with a shielded layer 126.
In another embodiment, as shown in figure 3, dot structure 100 is blue-light-emitting unit 114, green emitting list
The structure that member 116 is not exclusively overlapped with emitting red light unit 118.The first film transistor 1221 is close to the blue-light-emitting
The edge of unit 114 is set, and second thin film transistor (TFT) 1222 is set close to the edge of the green emitting unit 116, institute
The 3rd thin film transistor (TFT) 1223 is stated to set close to the edge of the emitting red light unit 118.
In the present embodiment, a sub-pixel structure is set in every Rotating fields, the second electricity with adjacent two layers sub-pixel structure
Two different thin film transistor (TFT)s 122 that pole 112 connects are arranged at 100 opposite sides of dot structure.
In the present embodiment, the insulating layer 120, first electrode 110 and second electrode 112 are transparent material.
In one embodiment, as shown in Figure 1, the dot structure 100 further includes reflecting layer 128, the reflecting layer
128 are arranged far from the side of light-emitting surface.Insulating layer is provided between the downside of light-emitting surface and emitting red light unit 118
120。
In another embodiment, the electrode farthest apart from light-emitting surface is the electrode with reflection function, the distance
The farthest electrode of light-emitting surface is first electrode 110 or second electrode 112.In an example, as shown in Figure 1, apart from light-emitting surface
Farthest electrode is second electrode 112, then the second electrode 112 is the electrode for having reflection function.In present embodiment, Fig. 1
Insulating layer 120 between shown reflecting layer 128 and reflecting layer 128 and the second electrode 112 can be omitted.
In detail, primaries include blue and green light and feux rouges, and wherein the value of the wavelength of blue light is in 400nm-480nm
Between, the value of green wavelength is between 500nm~560nm, and the value of red light wavelength is between 610nm~75nm.In the present embodiment,
The luminescence unit of the dot structure 100 includes blue-light-emitting unit 114 and emitting red light unit 118；The blue-light-emitting list
First 114 corresponding sub-pixel structures are positioned close in a Rotating fields of light-emitting surface；The 118 corresponding son of emitting red light unit
Dot structure is set in a Rotating fields farthest apart from light-emitting surface.It can make the light absorbs of dot structure 100 by above-mentioned setting
At least, so that the display effect of dot structure 100 is more preferable.
Dot structure 100 provided in an embodiment of the present invention, can by the way that the dot structure 100 is arranged to sandwich construction
So that dot structure 100 is smaller, resolution ratio also higher.
In another embodiment, the dot structure 100 includes double-layer structure, and the first Rotating fields include a sub-pixel
Structure, the second Rotating fields include two sub-pixel structures.
In one embodiment, as shown in figure 4, the superstructure of dot structure 100 sets a sub-pixel structure, under
Two sub-pixel structures are set in Rotating fields.In an example, the sub-pixel structure of superstructure includes blue light emitting unit；
Understructure includes the corresponding sub-pixel unit of red light-emitting unit and the corresponding sub-pixel unit of green luminescence unit.At it
In its embodiment, the superstructure of dot structure 100 sets two sub-pixel structures, and a sub-pixel is set in understructure
Structure.
In another embodiment, the superstructure of dot structure 100 sets two sub-pixel structures, in understructure
One sub-pixel structure is set.
In one embodiment, as shown in figure 5, the sub-pixel structure can be rectangle, two sub-pixels are set
Two sub-pixel structures of one layer of structure can be the form arrangement arranged side by side of the length of sub-pixel structure.
In another embodiment, as shown in fig. 6, the sub-pixel structure can be rectangle, two sub- pictures are set
Two sub-pixel structures of one layer of plain structure can be the wide form arrangement arranged side by side of sub-pixel structure.
Other details on the present embodiment can further refer to the description in above-described embodiment, no longer superfluous herein
State.
In another embodiment, the dot structure 100 includes four-layer structure, includes a sub-pixel per Rotating fields
Structure.As shown in fig. 7, four sub-pixel structures are respectively the corresponding sub-pixel structure of blue light unit, the corresponding son of green light unit
The corresponding sub-pixel structure of dot structure, red light unit and the corresponding sub-pixel structure of white light unit.In a kind of embodiment
In, it is from the order stacked gradually close to the side of 100 light-emitting surface of dot structure：The corresponding sub-pixel structure of blue light unit,
The corresponding sub-pixel structure of green light unit, the corresponding sub-pixel structure of red light unit, the corresponding sub-pixel structure of white light unit.
In other embodiment, the order of the sub-pixel structure can also be exchanged arbitrarily.
Other details on the present embodiment can further refer to the description in above-described embodiment, no longer superfluous herein
State.
In another embodiment, the dot structure 100 includes three-decker, the first Rotating fields and the second Rotating fields point
Not Bao Kuo a sub-pixel structure, third layer structure includes two sub-pixel structures.The third layer structure can be arranged on picture
The upside of centre, diagram or the downside of diagram in the diagram of plain structure 100.As shown in Figure 8, it is illustrated that downside be provided with two
A dot structure 100.In an example, blue light emitting unit corresponding sub- picture is set in the superstructure of dot structure 100
Plain structure, is provided with the corresponding sub-pixel structure of green luminescence unit in the media layer damage of dot structure 100；Dot structure 100
Understructure in be provided with the corresponding sub-pixel structure of red light-emitting unit and the corresponding sub-pixel structure of white-light emitting unit.
Other details on the present embodiment can further refer to the description in above-described embodiment, no longer superfluous herein
State.
In another embodiment, the dot structure 100 includes double-layer structure, the first Rotating fields and the second Rotating fields point
Bao Kuo not two sub-pixel structures.In one embodiment, as shown in figure 9, being set in the upper strata Rotating fields of dot structure 100
The corresponding sub-pixel structure of blue light emitting unit and the corresponding sub-pixel structure of green luminescence unit.Under dot structure 100
The corresponding sub-pixel structure of red light-emitting unit and the corresponding sub-pixel structure of white-light emitting unit are provided with Rotating fields.At it
In its embodiment, the sub-pixel structure of every Rotating fields in the dot structure 100 can arbitrarily mix setting as desired.
Other details on the present embodiment can further refer to the description in above-described embodiment, no longer superfluous herein
State.
The embodiment of the present invention also provides a kind of oled panel, and the oled panel includes multiple above-mentioned dot structures 100
Array, the first electrode 110 in each Rotating fields of all pixels structure 100 of the oled panel form an entirety, are formed
Multilayer first electrode layer.
In the present embodiment, as shown in Figure 10, the oled panel further includes conductive structure 130, and the conductive structure 130 will
Multilayer first electrode layer is electrically connected.In the present embodiment, the conductive structure 130 can be and the first electrode layer material phase
Same material is made.
Oled panel provided in an embodiment of the present invention, by the way that the dot structure 100 is arranged to sandwich construction, can make
Smaller, the resolution ratio also higher of dot structure 100.
The foregoing is only a preferred embodiment of the present invention, is not intended to limit the invention, for the skill of this area
For art personnel, the invention may be variously modified and varied.Within the spirit and principles of the invention, that is made any repaiies
Change, equivalent substitution, improvement etc., should all be included in the protection scope of the present invention.It should be noted that：Similar label and letter exists
Similar terms is represented in following attached drawing, therefore, once being defined in a certain Xiang Yi attached drawing, is then not required in subsequent attached drawing
It is further defined and is explained.
The above description is merely a specific embodiment, but protection scope of the present invention is not limited thereto, any
Those familiar with the art the invention discloses technical scope in, change or replacement can be readily occurred in, should all be contained
Cover within protection scope of the present invention.Therefore, protection scope of the present invention should be subject to scope of the claims.
Claims (10)
1. a kind of dot structure, it is characterised in that the dot structure includes at least two layers stacked structure, includes per Rotating fields
One or two sub-pixel structure；
Each sub-pixel structure include luminescence unit and light-emitting surface positioned at luminescence unit and with light-emitting surface opposite side first
Electrode and second electrode；
Insulating layer is provided between adjacent two layers sub-pixel structure.
2. dot structure as claimed in claim 1, it is characterised in that the second electrode of each sub-pixel structure respectively with film
Transistor connects, and to receive the drive signal transmitted by the thin film transistor (TFT), controls corresponding luminescence unit to shine.
3. dot structure as claimed in claim 2, it is characterised in that with the corresponding sub-pixel being stacked in adjacent two layers structure
The thin film transistor (TFT) of the second electrode connection of structure is arranged at dot structure the same side, between the two neighboring thin film transistor (TFT)
It is provided with shielded layer.
4. dot structure as claimed in claim 2 a, it is characterised in that sub-pixel structure is set in per Rotating fields, with phase
Two different thin film transistor (TFT)s of the second electrode connection of adjacent two layers of sub-pixel structure are arranged at dot structure opposite sides.
5. the dot structure as described in claim 1-4 any one, it is characterised in that the dot structure includes three-layered node
Structure, includes a sub-pixel structure per Rotating fields；Or；
The dot structure includes three-decker, and the first Rotating fields and the second Rotating fields include a sub-pixel structure respectively, the
Three-decker includes two sub-pixel structures；Alternatively,
The dot structure includes double-layer structure, and the first Rotating fields and the second Rotating fields include two sub-pixel structures respectively；Or
Person,
The dot structure includes double-layer structure, and the first Rotating fields include a sub-pixel structure, and the second Rotating fields include two
Sub-pixel structure；Alternatively,
The dot structure includes four-layer structure, includes a sub-pixel structure per Rotating fields.
6. dot structure as claimed in claim 1, it is characterised in that the insulating layer, first electrode and second electrode are
Bright material.
7. dot structure as claimed in claim 1, it is characterised in that the electrode farthest apart from light-emitting surface is with reflection function
Electrode, the electrode farthest apart from light-emitting surface is first electrode or second electrode；Alternatively,
The dot structure further includes reflecting layer, and the reflecting layer is arranged far from the side of light-emitting surface.
8. dot structure as claimed in claim 1, it is characterised in that the luminescence unit of the dot structure includes blue-light-emitting
Unit and emitting red light unit；The corresponding sub-pixel structure of the blue-light-emitting unit is positioned close to a Rotating fields of light-emitting surface
In；The corresponding sub-pixel structure of the emitting red light unit is set in a Rotating fields farthest apart from light-emitting surface.
9. a kind of oled panel, it is characterised in that the oled panel is included described in multiple the claims 1-8 any one
Pixel structure array, the first electrode in each Rotating fields of all pixels structure of the oled panel forms an entirety,
Form multilayer first electrode layer.
10. oled panel as claimed in claim 9, it is characterised in that the oled panel further includes conductive structure, described to lead
Multilayer first electrode layer is electrically connected by electric structure.
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| CN201711129495.8A CN107946343A (en) | 2017-11-15 | 2017-11-15 | Dot structure and oled panel |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110265456A (en) * | 2019-06-27 | 2019-09-20 | 武汉华星光电半导体显示技术有限公司 | Display panel and display device |
| CN110828504A (en) * | 2019-12-11 | 2020-02-21 | 苏州大学 | Pixel structure, manufacturing method and panel |
| WO2020082636A1 (en) * | 2018-10-23 | 2020-04-30 | 武汉华星光电半导体显示技术有限公司 | Display panel, fabrication method therefor and display module |
| CN111129327A (en) * | 2019-12-24 | 2020-05-08 | 深圳市华星光电半导体显示技术有限公司 | Full-color display panel and full-color display device |
| CN112909053A (en) * | 2021-01-26 | 2021-06-04 | 京东方科技集团股份有限公司 | Display device, display panel and manufacturing method thereof |
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