CN107918049A - A kind of current detecting system - Google Patents

A kind of current detecting system Download PDF

Info

Publication number
CN107918049A
CN107918049A CN201711339976.1A CN201711339976A CN107918049A CN 107918049 A CN107918049 A CN 107918049A CN 201711339976 A CN201711339976 A CN 201711339976A CN 107918049 A CN107918049 A CN 107918049A
Authority
CN
China
Prior art keywords
magnetized film
current
detecting system
computer
value
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201711339976.1A
Other languages
Chinese (zh)
Inventor
黄昌文
钟智雄
黄韬
方幼丽
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xiamen University of Technology
Original Assignee
Xiamen University of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xiamen University of Technology filed Critical Xiamen University of Technology
Priority to CN201711339976.1A priority Critical patent/CN107918049A/en
Publication of CN107918049A publication Critical patent/CN107918049A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/25Arrangements for measuring currents or voltages or for indicating presence or sign thereof using digital measurement techniques
    • G01R19/2506Arrangements for conditioning or analysing measured signals, e.g. for indicating peak values ; Details concerning sampling, digitizing or waveform capturing
    • G01R19/2509Details concerning sampling, digitizing or waveform capturing
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R15/00Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
    • G01R15/14Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
    • G01R15/24Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using light-modulating devices
    • G01R15/241Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using light-modulating devices using electro-optical modulators, e.g. electro-absorption

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)

Abstract

The present invention relates to a kind of current detecting system, comprising:Optical current sensor, photoelectric converter and computer;Optical current sensor includes light-emitting component, collimation lens, the first convex lens, electromagnetic generator, the magnetized film in magnetic field, the second convex lens and the coupled lens for connecting external current source;The light that light-emitting component produces after collimation lens and the first convex lens via being irradiated on magnetized film, and via entering photoelectric converter after the second convex lens and coupled lens, the optical signal of reception is changed into electric signal and output is to computer;Allocation of computer has the mathematical model of the deflection value triadic relation of the current value of external current source, magnetic induction intensity value and magnetized film central point, computer can calculate the deflection value of magnetized film central point according to electric signal, and computer can calculate the size of current of external current source according to the deflection value of magnetized film central point.The current detecting system of the present invention can more more precisely detect the numerical value of external current source.

Description

A kind of current detecting system
Technical field
The present invention relates to current detection technology, and in particular, to a kind of current detecting system.
Background technology
With the development of electric system, power system capacity is increasing, and the requirement to safety and stability is also higher and higher.After The effect of electric protection system is increasingly prominent, and current measurement is electrical energy measurement in electric system, relay protection, network analysis, is The key of system monitoring, plays very important effect, its measurement accuracy and reliability are straight in system maintenance, fault diagnosis etc. Connect safe and reliable, the economical operation for being related to electric system.The insulation system of traditional electromagnetic current transducer is complicated, whole Body size and weight are big so that financial cost greatly increases, iron core easily produces magnetic saturation, transient response scope is small, electric current is mutual The error increase of sensor.Although continuing to optimize, these can not be inherently solved the problems, such as.In view of this, it is special to propose this Application.
The content of the invention
The technical problems to be solved by the invention are how to more precisely detect the electric current of electric device.
In order to solve the above technical problems, the present invention provides a kind of current detecting system, comprising:Optical current sensor, light Electric transducer and computer;The optical current sensor include light-emitting component, collimation lens, the first convex lens, to even External current source is connect to produce the electromagnetic generator in magnetic field, positioned at the magnetized film caused by magnetic field generator in magnetic field, second Convex lens and coupled lens;The light that the light-emitting component produces after collimation lens and the first convex lens successively via irradiating In on magnetized film, the light after being acted on via the magnetized film is laggard via second convex lens and the coupled lens successively Enter the photoelectric converter;The optical signal of reception can be changed into electric signal and be delivered to the calculating by the photoelectric converter Machine;The allocation of computer has the current value of the external current source, the magnetization magnetic induction intensity value of film location and described The mathematical model of the deflection value triadic relation of magnetized film central point, the electricity that the computer can be exported according to the photoelectric converter Signal calculates the deflection value of the magnetized film central point, and the computer can be calculated according to the deflection value of the magnetized film central point The size of current of the external current source.
It is preferred that the electromagnetic generator includes the conduct piece to connect external current source and is sheathed on the conduct piece On ring-type iron core, the ring-type iron core has to configure the magnetic gap of the magnetized film, and the conduct piece connects foreign current Electromagnetic field can be produced during source in the magnetic gap of the ring-type iron core.
It is preferred that the conduct piece is copper bar.
It is preferred that the height of the magnetic gap of the ring-type iron core is between 3.8mm to 4.1mm.
It is preferred that the ring-type iron core uses silicon steel material
It is preferred that the magnetized film is PET magnetized films.
It is preferred that the deflection value of the magnetized film central point and the relation of the magnetic induction intensity value meet the following formula:
Wherein, y0 is the deflection value of magnetized film central point, and R is magnetized film Effective radius, B is magnetic induction intensity value, μ0It is magnetization film thickness for elasticity modulus that space permeability, E are magnetized film, h.
It is preferred that the deflection value of the magnetized film central point and the size of current of the external current source are linear relationship.
It is preferred that the photoelectricity development of evil in febrile disease device is ccd sensor.
By using above-mentioned technical proposal, the present invention can obtain following technique effect:
1st, technical scheme is by deflection value of the optical current sensor coupled computer to magnetized film, external current source Current value and the mathematical modulo mould established of magnetic induction intensity value, can more more precisely detect the numerical value of external current source;
2nd, ring-type iron core uses silicon steel material, is conducive to poly- magnetic so that magnetized film can more it is easy under the influence of a magnetic field Produce deformation.
Brief description of the drawings
Fig. 1 depicts the logic relation picture of each component of current detecting system of the present invention;
Fig. 2 depicts the deflection value of the central point of magnetized film and the graph of a relation of the size of external current source.
Embodiment
To make the purpose, technical scheme and advantage of embodiment of the present invention clearer, implement below in conjunction with the present invention Attached drawing in mode, is clearly and completely described the technical solution in embodiment of the present invention, it is clear that described reality The mode of applying is a part of embodiment of the present invention, rather than whole embodiments.Based on the embodiment in the present invention, ability The every other embodiment that domain those of ordinary skill is obtained without creative efforts, belongs to the present invention The scope of protection.Therefore, below the detailed description of the embodiments of the present invention to providing in the accompanying drawings be not intended to limit will The scope of the present invention of protection is sought, but is merely representative of the selected embodiment of the present invention.Based on the embodiment in the present invention, The every other embodiment that those of ordinary skill in the art are obtained without creative efforts, belongs to this Invent the scope of protection.
With reference to Fig. 1, current detecting system of the invention, comprising:Optical current sensor, photoelectric converter and calculating Machine;Optical current sensor include light-emitting component 1, collimation lens 2, the first convex lens 3, connecting external current source to produce The electromagnetic generator 4 in magnetic field, positioned at the magnetized film 7 caused by magnetic field generator 4 in magnetic field, the second convex lens 8 and coupling Lens 9;The light that light-emitting component 1 produces successively via being irradiated in after 2 and first convex lens 3 of collimation lens on magnetized film 7, via Magnetized film 7 act on after light successively via entering photoelectric converter after the second convex lens 8 and coupled lens 9;Photoelectric converter The optical signal of reception can be changed into electric signal and be delivered to the computer;Allocation of computer has the electric current of external current source It is worth, the mathematical model of the deflection value triadic relation of 7 central point of the magnetic induction intensity value of 7 position of magnetized film and magnetized film, computer The electric signal that can be exported according to photoelectric converter calculates the deflection value of 7 central point of magnetized film, and computer can be according to 7 center of magnetized film The deflection value of point calculates the size of current of external current source.
The light that light-emitting component 1 is sent injects magnetization via can be changed to directional light after 2 and first convex lens 3 of collimation lens Light can be transferred to collimation lens 2 by film, light-emitting component 1 by optical fiber.After light is via the second convex lens 8 and coupled lens 9 Can be into line convergence with into photoelectric converter.
In the present embodiment, electromagnetic generator 4 includes the conduct piece 5 to connect external current source and is sheathed on conduct piece Ring-type iron core 4 on 5, ring-type iron core 4 have to configure the magnetic gap of magnetized film 7, can be when conduct piece 5 connects external current source Electromagnetic field is produced in the magnetic gap of ring-type iron core 4.Conduct piece 5 can be copper bar, or the preferable conduct piece of other electric conductivity.Ring-type iron core The height of 4 magnetic gap can be between 3.8mm to 4.1mm, such as 4.0mm.Ring-type iron core 4 can use silicon steel material, with preferably Poly- magnetic.Magnetized film can be PET magnetized films.Photoelectricity development of evil in febrile disease device can be ccd sensor.
Computer can configure Ansoft softwares, with to the current value of external current source, magnetic induction intensity value and magnetized film 7 The relation founding mathematical models of deflection value three, the theoretical foundation of the mathematical model include herein below:
(1) deflection value of magnetized film central point and the relation of magnetic induction intensity meet the following formula:
Wherein, it is the deflection value of magnetized film, R is the effective radius of magnetized film, B is magnetic induction intensity value, be space permeability, E is the elasticity modulus of magnetized film, h is magnetization film thickness.
The relation of the deflection value of magnetized film and the magnetic induction intensity value is established as follows:Magnetized film is circular sheet material, its The foundation of the stress balance equation of the foundation of stress balance equation and thin plate has certain similitude in magnetic field.Because magnetized film is very It is thin, resistance to bending very little, and it is flexible, can bend deformation under the action of the magnetostatic power in magnetic field.Magnetized film is very light, its own weight Amount is negligible, the thickness very little of magnetized film, and material is very soft, and bending stiffness D can not have to consider.As bending stiffness D=0 When, the radial displacement of magnetized film is axisymmetric, i.e., planar without torsional deformation, all the time in tensioning state, there is no ring To displacement.
Magnetized film in magnetic field after by pre-tensioning, in film the displacement at any point can be divided into two components:Radial direction position Move the p and amount of deflection y vertical with membrane plane.The elastic equation established for magnetized film and the strain stress relation of displacement expression are respectively:
Wherein Nr be the radial load of unit length, the circumferential direction of Nt unit lengths make a concerted effort, the pretension of N0 unit lengths, P radial displacements, Y amounts of deflection, ε r radial strains component, ε t hoop strains component, r magnetized films radius, h magnetization film thickness, v Poisson's ratios.By calculating, The deflection value y0 satisfactions that magnetized film central point can be obtained are following:
Wherein, q uniform loads, R are the effective radius of magnetized film, E is the elasticity modulus of magnetized film, h is magnetization film thickness.
When magnetized film is in uniform magnetic field, it can be acted on be subject to uniform magnetic field power, the size of power can be expressed as:
Due to uniform loadAbove formula is substituted into, obtains the deflection value y of magnetized film central point0For:
Wherein, μ0=4 π × 10-7N/A2, i.e. space permeability;B, magnetic field Make the magnetic induction intensity of use with magnetized film;S, magnetic field and the area of magnetized film acting surface.
(2) size of current of the deflection value of magnetized film central point and external current source is linear relationship, that is, meets the following formula:
y0=kx, wherein being the deflection value of magnetized film, k depends on optical current sensor configured in one piece, and x is external current source Current value, when being subject to identical magnetic induction intensity, the diameter of magnetized film is bigger, and amount of deflection deformation is bigger, optical current sensing The sensitivity increase of device.Obtained by emulation experiment, be put into the average magnetic induction intensity phase that various sizes of magnetized film in magnetic gap is subject to It is poor little, but for the magnetized film of different-diameter and thickness, it is subject to the uniformity coefficient difference of magnetic induction intensity very big.Ensureing The magnetized film being relatively large in diameter is selected in the case of magnetic induction intensity is uniform as far as possible.
The concrete principle for the deflection value that the electric signal that computer is exported according to photoelectric converter calculates magnetized film is as follows:Light Via magnetization film location magnetic fields after, its polarization situation changes, by detection light polarization variations situation, can between Connect the deflection value for detecting magnetized film.Amount of deflection change using photoelectric converter detection magnetized film is the known technology of industry, therefore Repeat no more.
In one embodiment, the length of ring-type iron core is 200mm, width 144mm, sectional area 50mm*50mm, copper bar Width be 40mm, thickness 4mm.The height of the magnetic gap of ring-type iron core 4 is 4.0mm.Magnetized film is PET magnetized films, and PET magnetizes The elastic modulus E of film is 2.17Gpa, effective radius R is 50um, thickness h 20um.With reference to Fig. 2, Fig. 2 is depicted corresponding to outer The graph of a relation of the size of current of portion's current source and the deflection value of magnetized film, the situation of above-mentioned configuration is used in optical current sensor Under, k values substantially 0.27.
Technical scheme is by deflection value of the optical current sensor coupled computer to magnetized film, foreign current The mathematical model that the current value and magnetic induction intensity value in source are established, can more more precisely detect the electric current of external current source Value.The foregoing is merely the preferred embodiment of the present invention, is not intended to limit the invention, for those skilled in the art For member, the invention may be variously modified and varied.Any modification within the spirit and principles of the invention, being made, Equivalent substitution, improvement etc., should all be included in the protection scope of the present invention.

Claims (9)

1. a kind of current detecting system, it is characterised in that include:Optical current sensor, photoelectric converter and computer;
The optical current sensor include light-emitting component (1), collimation lens (2), the first convex lens (3), connecting outside Current source to produce the electromagnetic generator in magnetic field (4), positioned at the magnetized film (7) caused by magnetic field generator (4) in magnetic field, Two convex lenses (8) and coupled lens (9);The light that the light-emitting component (1) produces is successively via collimation lens (2 and first It is irradiated in after convex lens (3) on magnetized film (7), the light after being acted on via the magnetized film (7) is convex via described second successively Lens (8) and the coupled lens (9) enter the photoelectric converter afterwards;
The optical signal of reception can be changed into electric signal and exported to the computer by the photoelectric converter;
The allocation of computer have the current value of the external current source, the magnetized film (7) position magnetic induction intensity value and The mathematical model of the deflection value triadic relation of magnetized film (7) central point, the computer can be according to the photoelectric converter The electric signal of output calculates the deflection value of magnetized film (7) central point, and the computer can be according to the magnetized film (7) center The deflection value of point calculates the size of current of the external current source.
2. current detecting system according to claim 1, it is characterised in that the electromagnetic generator (4) is included to even The ring-type iron core (4) for connecing the conduct piece (5) of external current source and being sheathed on the conduct piece (5), ring-type iron core (4) tool There is a magnetic gap for configuring the magnetized film (7), when conduct piece (5) the connection external current source can be in the ring-type iron core (4) electromagnetic field is produced in magnetic gap.
3. current detecting system according to claim 2, it is characterised in that the conduct piece (5) is copper bar.
4. current detecting system according to claim 2, it is characterised in that the height of the magnetic gap of the ring-type iron core (4) For between 3.8mm to 4.1mm.
5. current detecting system according to claim 2, it is characterised in that the ring-type iron core (4) uses silicon steel sheet material Material.
6. according to the current detecting system, it is characterised in that the magnetized film is PET magnetized films.
7. current detecting system according to claim 1, it is characterised in that the deflection value of the magnetized film central point and institute The relation for stating magnetic induction intensity value meets the following formula:
Wherein, y0 is the deflection value of magnetized film central point, and R is effective for magnetized film Radius, B is magnetic induction intensity value, μ0It is magnetization film thickness for elasticity modulus that space permeability, E are magnetized film, h.
8. current detecting system according to claim 1, it is characterised in that the deflection value of the magnetized film central point and institute The size of current for stating external current source is linear relationship.
9. current detecting system according to claim 1, it is characterised in that the photoelectricity development of evil in febrile disease device is ccd sensor.
CN201711339976.1A 2017-12-14 2017-12-14 A kind of current detecting system Pending CN107918049A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201711339976.1A CN107918049A (en) 2017-12-14 2017-12-14 A kind of current detecting system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201711339976.1A CN107918049A (en) 2017-12-14 2017-12-14 A kind of current detecting system

Publications (1)

Publication Number Publication Date
CN107918049A true CN107918049A (en) 2018-04-17

Family

ID=61893327

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201711339976.1A Pending CN107918049A (en) 2017-12-14 2017-12-14 A kind of current detecting system

Country Status (1)

Country Link
CN (1) CN107918049A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111337733A (en) * 2019-05-14 2020-06-26 重庆大学 TMR-based busbar current and magnetic field intensity measuring device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103443639A (en) * 2012-08-29 2013-12-11 北京恒信创光电技术有限公司 Current measurement system, optical current transformer and fixing device thereof, light signal sampler and method thereof
WO2015149473A1 (en) * 2014-04-03 2015-10-08 易能乾元(北京)电力科技有限公司 Optical current sensor
CN106771496A (en) * 2017-01-10 2017-05-31 上海理工大学 A kind of optical current sensor
CN107250814A (en) * 2015-01-16 2017-10-13 西门子公司 The method of photoelectric measuring device and measurement electric current

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103443639A (en) * 2012-08-29 2013-12-11 北京恒信创光电技术有限公司 Current measurement system, optical current transformer and fixing device thereof, light signal sampler and method thereof
WO2015149473A1 (en) * 2014-04-03 2015-10-08 易能乾元(北京)电力科技有限公司 Optical current sensor
CN107250814A (en) * 2015-01-16 2017-10-13 西门子公司 The method of photoelectric measuring device and measurement electric current
CN106771496A (en) * 2017-01-10 2017-05-31 上海理工大学 A kind of optical current sensor

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
方幼丽 等: "基于静电场原理的光学电压传感器研究", 《福建农机》 *
李天麟 等: "光学电流互感器研究与评述", 《贵州电力技术》 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111337733A (en) * 2019-05-14 2020-06-26 重庆大学 TMR-based busbar current and magnetic field intensity measuring device
CN111337733B (en) * 2019-05-14 2022-01-28 重庆大学 TMR-based busbar current and magnetic field intensity measuring device

Similar Documents

Publication Publication Date Title
CN100460841C (en) Differential and temperature compensating type on-line testing method and system for bridge cable force
CN106662424B (en) Sensor unit and the sensor for using it
Guojun et al. Improvement of the MEMS bionic vector hydrophone
CN104296856B (en) Enhanced sensitivity platform optical fiber raster vibration sensor
CN202886028U (en) Magnetostriction force sensor for alternating loads
CN206573245U (en) A kind of shock measuring system of array PVDF piezoelectric membranes
CN106768569A (en) A kind of shock measuring system of array PVDF piezoelectric membranes
CN103344317B (en) Non-contact optical fiber grating vibration sensor and vibration measurement device and method
CN101858932B (en) Six-dimensional acceleration transducer
CN107918049A (en) A kind of current detecting system
KR20140067650A (en) Torque sensor
Cao et al. Design of flexible piezoelectric gyroscope for structural health monitoring
CN209416543U (en) A kind of force snesor with serpentine configuration beam
CN108981664A (en) Photoelectric closed-loop tilt angle sensor
CN110044682A (en) Unilateral gap aluminium alloy test specimen crack Propagation monitoring method based on FBG sensor
CN103017948A (en) Piezoresistive type pressure sensor
CN109633234A (en) A kind of fiber grating electric-field sensor of high sensitivity
CN206430704U (en) Optical fibre grating three-dimensional strain transducer based on elliptical ring
CN106895930A (en) A kind of micro- power of cantilever beam structure and micro-displacement sensing device
CN202994259U (en) Weighing sensor, and digital display pushpull dynamometer using same
CN206470005U (en) Self-closing self-shield pressure pulling force sensor
CN205814326U (en) A kind of medical device positioning system
CN201673170U (en) Six-dimensional acceleration transducer
CN108593154A (en) A kind of three-dimensional precise piezoelectric sensing device
CN106767483A (en) Optical fibre grating three-dimensional strain transducer based on elliptical ring

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WD01 Invention patent application deemed withdrawn after publication
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20180417