CN107910442A - Suspended gate phototransistor and preparation method thereof - Google Patents
Suspended gate phototransistor and preparation method thereof Download PDFInfo
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- CN107910442A CN107910442A CN201710964803.2A CN201710964803A CN107910442A CN 107910442 A CN107910442 A CN 107910442A CN 201710964803 A CN201710964803 A CN 201710964803A CN 107910442 A CN107910442 A CN 107910442A
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- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/60—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation in which radiation controls flow of current through the devices, e.g. photoresistors
- H10K30/65—Light-sensitive field-effect devices, e.g. phototransistors
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- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
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- H10K30/354—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a metal-insulator-semiconductor [m-i-s] structure
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- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
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Abstract
The present invention provides suspended gate phototransistor and preparation method thereof, the suspended gate phototransistor includes：Substrate, light absorbing layer, dielectric layer, conductive layer, source electrode and drain electrode；The light absorbing layer is set over the substrate, and the dielectric layer is arranged on the light absorbing layer, and the conductive layer is arranged on the dielectric layer, and the source electrode and the drain electrode are separately positioned on the both sides of the conductive layer upper surface；Wherein, the dielectric layer is made of material of the carrier mobility not less than default value.There is independent light absorbing layer and independent conductive layer in suspended gate phototransistor provided by the invention, and the conductive layer has the carrier mobility not less than default value, can effectively make up played at the same time by active layer in the prior art absorption spectrum and conductive functional bands come the defects of, make phototransistor that there is good performance.
Description
Technical field
The present invention relates to photodetection applied technical field, more particularly, to suspended gate phototransistor and its preparation
Method.
Background technology
At present, flourishing with electronic field, electronic device is gradually highlighted in the effect of photodetection application field.
Phototransistor is a kind of electronic device that can convert light signals into electric signal, can be widely applied for electronical display,
The fields such as health care, environment measuring.
Traditional phototransistor is as shown in Figure 1, the flexibility that this phototransistor includes substrate 1, sets on substrate 1
Material layer 2, the drain electrode 4 that both ends are set on flexible material layer 2 and source electrode 3, in drain electrode 4, source electrode 3 and flexible material
The active layer 5 of uncovered electrode region setting, the dielectric layer 6, the central area on dielectric layer 6 that are set on active layer 5 on the bed of material 2
The gate electrode 7 that domain is set, and the protective layer 8 set on gate electrode 7 with uncovered electrode region on dielectric layer 6, wherein, have
Active layer 5 is organic bulk heterojunction that electron donor material and electron acceptor material are formed by solution blending.
Phototransistor of the prior art, employing the organic bulk heterojunction being mainly used in solar cell and being used as has
Active layer, while absorption spectrum and conductive function are played, although organic bulk heterojunction has preferable spectral absorption property,
The order of magnitude of the carrier mobility of organic bulk heterojunction is generally 10-3, this carrier mobility is in solar cells
Enough, but good electric conductivity far can not be provided for phototransistor, so as to limit the performance of phototransistor.
The content of the invention
Solve the above problems in order to overcome the problems referred above or at least in part, the present invention provides suspended gate phototransistor
And preparation method thereof.
On the one hand, the present invention provides a kind of phototransistor, including：Substrate, light absorbing layer, dielectric layer, conductive layer, source
Electrode and drain electrode；
The light absorbing layer is set over the substrate, and the dielectric layer is arranged on the light absorbing layer, the conduction
Layer is arranged on the dielectric layer, and the source electrode and the drain electrode are separately positioned on the both sides of the conductive layer upper surface；
Wherein, the conductive layer is made of material of the carrier mobility not less than default value.
Preferably, phototransistor further includes：Insulating layer, the insulating layer are arranged on the substrate and the light absorbing layer
Between.
Preferably, phototransistor further includes：Dielectric decorative layer, the dielectric decorative layer are arranged on the conductive layer and institute
Give an account of between electric layer.
Preferably, the light absorbing layer is：The organism being mixed to form by electron donor material and electron acceptor material is different
Matter knot.
Preferably, the electron donor material and the electron acceptor material are Organic micromolecular semiconductor material or gather
Compound semi-conducting material.
Preferably, the electron donor material is polymer semiconducting material P3HT, and the electron acceptor material is small point
Sub- semi-conducting material PC61BM。
Preferably, the material of the conductive layer is small molecular semiconductor material NDI3HU-DTYM2, the NDI3HU-
The carrier mobility of DTYM2 is not less than default value.
Preferably, the thickness of the insulating layer is 295nm~305nm, and the thickness of the light absorbing layer is 45nm~55nm,
The thickness of the dielectric layer is 45nm~55nm, and the thickness of the source electrode and the drain electrode is 25nm~35nm.
On the other hand, present invention also offers a kind of preparation method of above-mentioned phototransistor, including：
S1, prepares light absorbing layer on substrate；
S2, dielectric layer is prepared on the light absorbing layer；
S3, prepares the conductive layer that carrier mobility is not less than default value on the dielectric layer；
S4, source electrode and drain electrode is prepared in the both sides of the conductive layer upper surface.
Preferably, the S3 is specifically included：
S31, small molecular semiconductor material NDI3HU-DTYM2 is blended in chloroform solvent, the NDI3HU-
The carrier mobility of DTYM2 is not less than default value；
S32, obtained mixed solution is spin-coated on the dielectric layer, and film is formed on the dielectric layer；
S33, carries out thermal anneal process by the film, obtains the conductive layer.
Suspended gate phototransistor provided by the invention and preparation method thereof, suspended gate phototransistor are interior with independent
Light absorbing layer and independent conductive layer, conductive layer have the carrier mobility not less than default value, can effectively make up existing
Played at the same time by active layer in technology absorption spectrum and conductive functional bands come the defects of, there is phototransistor good
Performance.
Brief description of the drawings
Fig. 1 is the structure diagram of phototransistor in the prior art；
Fig. 2 is the structure diagram for the phototransistor that one embodiment of the invention provides；
Fig. 3 is the structure diagram for the phototransistor that another embodiment of the present invention provides；
Fig. 4 is the flow diagram of the preparation method for the phototransistor that another embodiment of the present invention provides；
Fig. 5 is that the both sides on surface form the method flow schematic diagram of source electrode and drain electrode on the electrically conductive in Fig. 4；
Fig. 6 is gate voltage and source-drain current value, source-drain current in the phototransistor that another embodiment of the present invention provides
Graph of relation between square root；
Fig. 7 is that the transfer characteristic that the phototransistor that another embodiment of the present invention provides is measured under different illumination intensity is bent
Line chart；
Fig. 8 be another embodiment of the present invention provide phototransistor under different illumination intensity photogenerated current value with grid electricity
The change curve of pressure；
Fig. 9 be another embodiment of the present invention provide phototransistor under different illumination intensity lightsensitivity with gate voltage
Change curve；
Figure 10 be another embodiment of the present invention provide phototransistor under the cyclic switching for having no light condition source and drain
Electric current with the time in-situ test curve map.
Embodiment
With reference to the accompanying drawings and examples, the embodiment of the present invention is described in further detail.Implement below
Example is used to illustrate the present invention, but is not limited to the scope of the present invention.
As shown in Fig. 2, one embodiment of the invention provides a kind of phototransistor, including：Substrate 11, light absorbing layer 13, be situated between
Electric layer 14, conductive layer 16, source electrode 17 and drain electrode 18；The light absorbing layer 13 is arranged on the substrate 11, the dielectric
Layer 14 is arranged on the light absorbing layer 13, and the conductive layer 16 is arranged on the dielectric layer 14, the source electrode 17 and institute
State the both sides that drain electrode 18 is separately positioned on 16 upper surface of conductive layer；Wherein, the conductive layer 16 is by carrier mobility
Material not less than default value is made.
Specifically, light absorbing layer 13, dielectric layer 14 and the conductive layer 16 upward layer by layer deposition since substrate 11 successively, is leading
The both sides of 16 upper surface of electric layer deposit active electrode 17 and drain electrode 18 respectively, form the suspended gate photoelectric crystal of sandwich construction
Pipe.It is understood that light absorbing layer 13 and dielectric layer 14 is compound is used as grid, due to the ruler of whole suspended gate phototransistor
Very little very little, each layer is very thin, so light absorbing layer 13 and the compound grid of dielectric layer 14 can regard suspended gate as, i.e. grid is floating
Empty, without outer lead.Suspended gate phototransistor provided by the invention is referred to as phototransistor below.
Organic bulk heterojunction is often used in solar cells, this is because, in organic heterojunction, electron donor material
The hole formed on the interface of material and electron acceptor material and electronics can reach corresponding electricity by shorter delivering path
Pole, this can make organism hetero-junctions have higher photoelectric conversion efficiency.But the carrier mobility of organic bulk heterojunction
General only 10-3The order of magnitude, this mobility far can not provide good electric conductivity for phototransistor.It is so of the invention
It is middle that conductive layer 16 is made using semi-conducting material of the carrier mobility not less than default value, so that conductive layer 16 can be
Phototransistor provides good electric conductivity.Preferably, default value can be arranged to 0.8, i.e. conductive layer 16
Carrier mobility be at least 0.8cm2V-1s-1。
Preferably, the optional silicon of the material of substrate 11, specific substrate 11 can be silicon chip, and light absorbing layer 13 is deposited on
On silicon chip.Light absorbing layer 13 is used to absorb optical signal, and converts optical signals to electric signal, and conductive layer 16 is then to be used for transmission to turn
The electric signal got in return.Dielectric layer 14 is usually insulating materials, for light absorbing layer 13 and conductive layer 16 to be separated, so as to light
Absorbed layer 13 and conductive layer 16 can realize absorption function and conducting function respectively in phototransistor.In the present embodiment, source
Electrode and drain electrode are metal electrode.
The material of substrate 11 is not limited to silicon, transparent glass or high molecular polymer is can also be, by high molecular polymer
Flexible substrate can be formed.
In the present embodiment, independent light absorbing layer and independent conductive layer, and conductive layer material are set in phototransistor
The carrier mobility of material is not less than default value, can effectively make up and play absorption spectrum at the same time by active layer in the prior art
The defects of coming with conductive functional bands, makes phototransistor have good performance.
Preferably, the fabulous material gold Au of electric conductivity can be selected in source electrode and drain electrode.Electrode structure is preferred
For interdigitated electrodes.
Preferably, dielectric layer is insulating polymer, and optional high molecular material gathers to dichlorotoleune (Parylene
C)。
On the basis of above-described embodiment, further included in phototransistor：Insulating layer, the insulating layer are arranged on the lining
Between bottom and the light absorbing layer.
Preferably, the optional silica of the material of insulating layer, by silicon dioxide insulating layer covering on a silicon substrate,
And light absorbing layer is deposited on silicon dioxide insulating layer.
On the basis of above-described embodiment, further included in phototransistor：Dielectric decorative layer, the dielectric decorative layer are set
Between the conductive layer and the dielectric layer, dielectric decorative layer is used to connect conductive layer and dielectric layer.Due to dielectric layer deposition
After on light absorbing layer, the degree of roughness of dielectric layer upper surface may influence the performance of phototransistor, to avoid this feelings
The generation of condition, modifies dielectric layer upper surface, i.e. surface deposit dielectric decorative layer on the dielectric layer.Preferably,
Dielectric decorative layer can be self-assembled molecule layer, and the material of dielectric decorative layer may be selected octadecyl trichlorosilane alkane (OTS), that is, pass through
Surface deposits OTS layers on the dielectric layer, and deposits conductive layer on OTS layers, can reduce the roughness of dielectric layer upper surface,
Realize being smoothly connected between dielectric layer and conductive layer, and then exclude shadow of the dielectric layer surface roughness to phototransistor performance
Ring.
As shown in figure 3, the structure diagram of the phototransistor provided for one embodiment of the invention, can from figure
Go out, insulating layer 12, light absorbing layer 13, dielectric layer 14, dielectric decorative layer 15 and conductive layer 16 successively since substrate 11 upwards by
Layer deposition, the both sides on surface deposit active electrode 17 and drain electrode 18 respectively on conductive layer 16, form the photoelectricity of sandwich construction
Transistor.
On the basis of above-described embodiment, the light absorbing layer is：Mixed by electron donor material and electron acceptor material
The organic bulk heterojunction formed.
Specifically, since the effect of light absorbing layer is to absorb optical signal, and electric signal is converted optical signals to, it is possible to achieve
The structure of this function can be hetero-junctions.Electron donor material and electron acceptor material form single one by one in hetero-junctions
Region, the exciton that any position produces can reach donor-acceptor interface by very short distance, and in donor-receiver circle
Face is efficiently separated, and photoelectric conversion efficiency is greatly improved.Hetero-junctions can be divided into organic heterojunction and nothing again
Machine hetero-junctions, for inorganic heterogeneous, organic heterojunction can be prepared with large area, and realize the system of flexible device
It is standby, there is the performance for preferably absorbing optical signal.
Preferably, light absorbing layer provided by the invention uses the more preferable organism of photo absorption performance in organic heterojunction
Hetero-junctions.
On the basis of above-described embodiment, electron donor material and the electron acceptor material for being mixed into organic bulk heterojunction are equal
For Organic micromolecular semiconductor material or polymer semiconducting material.
Specifically, Organic micromolecular semiconductor material or polymer semiconducting material are respectively provided with good photoelectric respone
Can, and there is good stability, so a kind of Organic micromolecular semiconductor material or one may be selected in electron donor material
A kind of Organic micromolecular semiconductor material or a kind of polymer half also may be selected in kind polymer semiconducting material, electron acceptor material
Conductor material.Preferably, electron donor material can choose polymer semiconducting material P3HT, and electron acceptor material is
Small molecular semiconductor material PC61BM。
On the basis of above-described embodiment, P3HT and PC in organic bulk heterojunction61The ratio of BM can be 1:1 so that electronics
Donor and electron acceptor can be fully used.
On the basis of above-described embodiment, the material of the conductive layer is small molecular semiconductor material NDI3HU-DTYM2,
The carrier mobility of the NDI3HU-DTYM2 is not less than default value.
Specifically, since conductive layer is used for transmission the electric signal being converted to, so conductive layer needs high carrier to move
Shifting rate realizes the good electric conductivity of phototransistor.Small molecular semiconductor material or polymer may be selected in the material of conductive layer
Semi-conducting material.Preferably, selection small molecular semiconductor material NDI3HU-DTYM2 prepares conductive layer, carrier mobility
Rate can be controlled in 0.8-1.2cm2V-1s-1In the range of, the electric conductivity of phototransistor can be greatly improved, and then improve
The overall performance of phototransistor.
On the basis of above-described embodiment, the thickness of the insulating layer is 295nm~305nm, the thickness of the light absorbing layer
Spend for 45nm~55nm, the thickness of the dielectric layer is 45nm~55nm, and the thickness of the source electrode and the drain electrode is
25nm~35nm.
Specifically, due to form the insulating layer of phototransistor, light absorbing layer, dielectric layer material thickness, and source electricity
The thickness of pole and drain electrode can all produce a very large impact the performance of phototransistor, such as the thickness of absorbed layer can be to absorbed layer
Extinction efficiency and exciton dissociation efficiency can produce a very large impact, and then the photo absorption performance of phototransistor can be influenced.So
The thickness of layers of material is each defined in above range, can make whole phototransistor that there is more preferable photoelectric respone
Energy.Preferably, the thickness of insulating layer may be configured as 300nm, and the thickness of light absorbing layer may be configured as 50nm, dielectric layer
Thickness may be configured as 50nm, and the thickness of source electrode and drain electrode can be respectively set to 30nm.
Since the thickness of conductive layer influences very little to the photoelectric response performance of phototransistor, so the present invention is not done herein
Limit.
As shown in figure 4, it is brilliant that a kind of above-mentioned photoelectricity is provided on the basis of above-described embodiment, in another embodiment of the present invention
The preparation method of body pipe, including：
S1, prepares light absorbing layer on substrate；
S2, dielectric layer is prepared on the light absorbing layer；
S3, prepares the conductive layer that carrier mobility is not less than default value on the dielectric layer；
S4, source electrode and drain electrode is prepared in the both sides of the conductive layer upper surface.
Specifically, light absorbing layer is deposited using spin-coating method on substrate, the preferable material of photo absorption performance may be selected as light
Absorbed layer.Using spin-coating method or chemical vapour deposition technique, dielectric layer, optional insulative material deposition are situated between on light absorbing layer
Electric layer.Conductive layer is deposited using spin-coating method on the dielectric layer, the preferable material deposition conductive layer of electric conductivity may be selected.Using true
Empty thermal evaporation deposition on the electrically conductive surface both sides pass through mask evaporation coating method deposit source electrode and drain electrode.
In the present embodiment, by forming light absorbing layer on substrate, dielectric layer is formed on the light absorbing layer, in institute
Give an account of and conductive layer is formed in electric layer；So that there is independent light absorbing layer and independent conductive layer in phototransistor, and it is conductive
Layer is made of carrier mobility not less than the material of default value, can effectively make up in the prior art by active layer at the same time
The defects of coming to absorption spectrum and conductive functional bands, makes phototransistor have good performance.
On the basis of above-described embodiment, before S1, substrate is cleaned first, first successively by secondary water, second
Alcohol, acetone are cleaned by ultrasonic, then substrate is placed in concentrated sulfuric acid dioxygen water mixed liquid and soaks half an hour to clean substrate surface, then
By the deionized water ultrasound of the substrate after processing, and use nitrogen N2Drying, the substrate as deposition light absorbing layer.
On the basis of above-described embodiment, before S1, further include：Insulating layer is formed on substrate after cleaning, works as substrate
When material is silicon, vapour deposition process (the Plasma Enhanced Chemical of direct using plasma enhancing chemistry
Vapor Deposition, PECVD) depositional mode obtain insulating layer silica, spin coating, vacuum evaporation etc. can also be passed through
By other insulative material depositions on substrate, the present invention is not specifically limited the method for forming insulating layer on substrate to mode.
At this time, before forming insulating layer on substrate, also need to clean substrate by the above method, details are not described herein.Make
For preferred solution, the thickness for forming insulating layer is 300nm.
On the basis of above-described embodiment, S1 is specifically included：
Electron donor material and electron acceptor material are mixed in chlorobenzene solvent；
Obtained mixed solution is spin-coated on the substrate using solution spin-coating method and carries out thermal anneal process, obtains institute
State light absorbing layer.
Preferably, light absorbing layer is used as using organic bulk heterojunction in the present embodiment, it is electric in organic bulk heterojunction
Sub- donor material can be P3HT, and electron acceptor material can be PC61BM, you can selection includes P3HT and PC61The mixed solution of BM
As the material for forming light absorbing layer.P3HT and PC in mixed solution61The ratio of BM is 1:1, the solvent in mixed solution is chlorine
Benzene, the concentration of mixed solution is 10mg/mL.During using depositing light absorbing layer on the insulating layer of solution spin-coating method on substrate, make
For preferred solution, the speed of spin coating is arranged to 2000rpm, and spin coating time 40s, carries out uniform spin coating, obtained light absorbing layer
Thickness be 50nm.Need to make annealing treatment obtained absorbed layer after spin coating, preferably, setting annealing temperature is
100 DEG C, annealing time is arranged to 30min.
On the basis of above-described embodiment, S2 is specifically included：High molecular material using the spin coating of solution spin-coating method and is deposited
To light absorbing layer, dielectric layer is formed on light absorbing layer, or using chemical vapour deposition technique (Chemical Vapor
Deposition, CVD) high molecular material is deposited to light absorbing layer, dielectric layer is formed on light absorbing layer, forms dielectric layer
Thickness be 50nm.
Preferably, using chemical vapour deposition technique (Chemical Vapor Deposition, CVD) by high score
On sub- material Parylene C which deposits to light absorbing layer, transparent dielectric layer in uniform thickness can be formed by vapour deposition,
It is possible to prevente effectively from destruction of the organic solvent to light-absorption layer.
As shown in figure 5, on the basis of above-described embodiment, S3 is specifically included：
S31, small molecular semiconductor material NDI3HU-DTYM2 is blended in chloroform solvent；
S32, obtained mixed solution is spin-coated on the dielectric layer, and film is formed on the dielectric layer；
S33, carries out thermal anneal process by the film, obtains the conductive layer.
On the basis of above-described embodiment, on light absorbing layer after dielectric layer, for lifting dielectric layer upper surface
Interfacial property, reduces the roughness of dielectric layer upper surface, and octadecyl trichlorosilane alkane (OTS) modification, modification are carried out to dielectric layer
Mode is preferably gas phase modification method.That is, deposited octadecyl trichlorosilane alkane on the dielectric layer using gas phase modification method,
Dielectric decorative layer is formed on the dielectric layer, can be reduced the roughness of dielectric layer upper surface, be realized between dielectric layer and conductive layer
Be smoothly connected, and then exclude influence of the dielectric layer surface roughness to phototransistor performance.
At this time, need to deposit conductive layer on dielectric decorative layer on the dielectric layer in S3.Specifically, on dielectric decorative layer
When forming conductive layer, selection conductive is the N-type small molecular semiconductor material NDI3HU- with very high carrier mobility
The carrier mobility of DTYM2, NDI3HU-DTYM2 can generally achieve 0.8-1.2cm2V-1s-1, can be carried for phototransistor
For good electric conductivity.NDI3HU-DTYM2 is blended in chloroform solvent first, it is 5mg/mL's to form concentration
The mixed solution of NDI3HU-DTYM2 and chloroform.Mixed solution is spin-coated on dielectric decorative layer using solution spin-coating method,
The speed of spin coating is arranged to 3000rpm, and spin coating time 40s, carries out uniform spin coating, and film is formed on dielectric decorative layer.Rotation
Need immediately to make annealing treatment obtained film after painting, preferably, it is 150 DEG C to set annealing temperature, during annealing
Between be arranged to 15min.It can be obtained after annealing on dielectric decorative layer with higher carrier mobility and performance stabilization
Conductive layer.
In the present embodiment, single light absorbing layer is set in phototransistor, and is not less than using carrier mobility
The material of default value substantially increases the electric conductivity of phototransistor, and then improve photoelectricity as independent conductive layer
The performance of transistor.
On the basis of above-described embodiment, S4 is specifically included：Electrode material is chosen as gold, using vacuum thermal evaporation by gold
The both sides of conductive layer upper surface are respectively deposited at, form source electrode and drain electrode.Source electrode is prepared by vacuum vapour deposition at the same time
During with drain electrode, the metal mask plate with electrode pattern is attached at deposition has on conductive layer, and conduction is placed on evaporation plating
In film device, 5 × 10 are evacuated to-4Pa, using thermal evaporation coating process, is being led golden uniform deposition with 0.3A/s evaporation rates
The both sides of electric layer upper surface.Preferably, the thickness of the source electrode and drain electrode of formation is respectively 30nm.
The present invention selects organic bulk heterojunction to make as light absorbing layer, N-type small molecular semiconductor material NDI3HU-DTYM2
For conductive layer, suspended gate structure N-type phototransistor is prepared.Organic bulk heterojunction can be obtained using solution mixing method, can
See in optical range that there is the higher absorption coefficient of light and exciton dissociation efficiency, while there is excellent N-type transmission characteristic and grid
Ability of regulation and control, can increase substantially the optical responsivity of phototransistor.N-type small molecular semiconductor material NDI3HU-DTYM2 has
There is high carrier mobility, charge transport properties are stablized.It is fully different with reference to the good organism of photo absorption performance using suspended gate structure
The small molecular semiconductor material of matter knot and high carrier mobility, respectively as light absorbing layer and conductive layer, prepares high response
The phototransistor of degree.The preparation method of phototransistor provided by the invention, technique is simple, and success rate is high, is preparing bloom
The phototransistor field of electroresponse degree has broad application prospects.
In another embodiment of the present invention, on the basis of above-described embodiment, with reference to Fig. 6-Figure 10 to provided by the invention
The photoelectric respone effect of phototransistor illustrates.
As shown in fig. 6, it is gate voltage (unit V) in phototransistor provided by the invention and source-drain current value (unit
For A), square root (the unit A of source-drain current1/2) between graph of relation.Wherein, source-drain current is source electrode and leakage
Electric current between electrode, what curve with small square frame represented be gate voltage (unit V) and source-drain current value (unit A) it
Between relation, without the curve of small square frame represent be gate voltage (unit V) and (unit is the square root of source-drain current
A1/2) between relation.
It is as shown in fig. 7, bent for the transfer characteristic that phototransistor provided by the invention is measured under 6 kinds of different illumination intensities
Line, 6 kinds of different illumination intensities of use are respectively 0 μ W/cm2、32.4μW/cm2、244μW/cm2、551μW/cm2、984μW/cm2、
2065μW/cm2.It can be seen from figure 7 that since intensity of illumination is different, the transfer characteristic of phototransistor is widely different.With
The increase of intensity of illumination, source-drain current value are continuously increased in gate voltage under the same conditions, show good optical Response
Matter.
As shown in figure 8, not to be under conditions of 0 in intensity of illumination, (unit is for photogenerated current value under different illumination intensity
NA) with the change curve of gate voltage (unit V), wherein, photogenerated current is under the electric current and dark state produced under light illumination
The current differential of generation, 5 kinds of different illumination intensities of use are respectively 32.4 μ W/cm2、244μW/cm2、551μW/cm2、984μ
W/cm2、2065μW/cm2.As can be seen from Figure 8, intensity of illumination is stronger, and photogenerated current value is bigger, shows provided by the invention
The sensitivity of phototransistor is higher.
As shown in figure 9, not to be under conditions of 0 in intensity of illumination, lightsensitivity P is with gate voltage under different illumination intensity
The change curve of (unit V), 5 kinds of different illumination intensities of use are respectively 32.4 μ W/cm2、244μW/cm2、551μW/cm2、
984μW/cm2、2065μW/cm2.Wherein, lightsensitivity is by formula P=(ILight-IDark)/IDarkIt is calculated, wherein ILightFor
Source-drain current under the conditions of light irradiation, IDarkFor the source-drain current under dark condition.It can be seen in figure 9 that in intensity of illumination
Under conditions of certain, when gate voltage is close to 10V, the lightsensitivity of phototransistor is bigger.
As shown in Figure 10, it is phototransistor provided by the invention source-drain current under the cyclic switching for having no light condition
(unit nA) is with time (the in-situ test curve of unit s).It can be seen from fig. 10 that the phototransistor show it is good
Good invertibity and stability.
In conclusion a kind of suspended gate phototransistor provided by the invention and preparation method thereof, selects organism heterogeneous
Knot is used as light absorbing layer, and the N-type small molecular semiconductor material NDI3HU-DTYM2 of high carrier mobility is obtained as conductive layer
High-performance suspended gate N-type phototransistor.Not only there is obtained phototransistor excellent N-type transmission characteristic and grid to regulate and control
Ability, and can be fully with reference to the good organic bulk heterojunction of the organic semiconducting materials and extinction property of high carrier mobility
Respective advantage, there is very high responsiveness.
Finally, method of the invention is only preferable embodiment, is not intended to limit the scope of the present invention.It is all
Within the spirit and principles in the present invention, any modification, equivalent replacement, improvement and so on, should be included in the protection of the present invention
Within the scope of.
Claims (10)
- A kind of 1. phototransistor, it is characterised in that including：Substrate, light absorbing layer, dielectric layer, conductive layer, source electrode and electric leakage Pole；The light absorbing layer is set over the substrate, and the dielectric layer is arranged on the light absorbing layer, and the conductive layer is set Put on the dielectric layer, the source electrode and the drain electrode are separately positioned on the both sides of the conductive layer upper surface；Wherein, the conductive layer is made of material of the carrier mobility not less than default value.
- 2. phototransistor according to claim 1, it is characterised in that further include：Insulating layer, the insulating layer are arranged on Between the substrate and the light absorbing layer.
- 3. phototransistor according to claim 1, it is characterised in that further include：Dielectric decorative layer, the dielectric modification Layer is arranged between the conductive layer and the dielectric layer.
- 4. phototransistor according to claim 1, it is characterised in that the light absorbing layer is：By electron donor material The organic bulk heterojunction being mixed to form with electron acceptor material.
- 5. phototransistor according to claim 4, it is characterised in that the electron donor material and the electron acceptor Material is Organic micromolecular semiconductor material or polymer semiconducting material.
- 6. phototransistor according to claim 5, it is characterised in that the electron donor material is polymer semiconductor Material P3HT, the electron acceptor material are small molecular semiconductor material PC61BM。
- 7. phototransistor according to claim 1, it is characterised in that the material of the conductive layer is small molecular semiconductor The carrier mobility of material NDI3HU-DTYM2, the NDI3HU-DTYM2 are not less than default value.
- 8. according to the phototransistor described in claim 2-7, it is characterised in that the thickness of the insulating layer for 295nm~ 305nm, the thickness of the light absorbing layer are 45nm~55nm, and the thickness of the dielectric layer is 45nm~55nm, the source electrode Thickness with the drain electrode is 25nm~35nm.
- It is 9. a kind of such as the preparation method of claim 1-8 any one of them phototransistors, it is characterised in that including：S1, prepares light absorbing layer on substrate；S2, dielectric layer is prepared on the light absorbing layer；S3, prepares the conductive layer that carrier mobility is not less than default value on the dielectric layer；S4, source electrode and drain electrode is prepared in the both sides of the conductive layer upper surface.
- 10. according to the method described in claim 9, it is characterized in that, the S3 is specifically included：S31, small molecular semiconductor material NDI3HU-DTYM2 is blended in chloroform solvent, the NDI3HU-DTYM2's Carrier mobility is not less than default value；S32, obtained mixed solution is spin-coated on the dielectric layer, and film is formed on the dielectric layer；S33, carries out thermal anneal process by the film, obtains the conductive layer.
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