CN107910398B - P型perc双面太阳电池的制作方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract description 15
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract description 15
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- 238000005530 etching Methods 0.000 claims abstract description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000011521 glass Substances 0.000 claims abstract description 6
- 229910052709 silver Inorganic materials 0.000 claims abstract description 6
- 239000004332 silver Substances 0.000 claims abstract description 6
- 238000005245 sintering Methods 0.000 claims abstract description 6
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- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 15
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 10
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 10
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 10
- 239000007787 solid Substances 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 8
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 5
- 230000002378 acidificating effect Effects 0.000 claims description 5
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- 239000012535 impurity Substances 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- 235000012431 wafers Nutrition 0.000 claims 9
- 238000002161 passivation Methods 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
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- 238000005260 corrosion Methods 0.000 description 3
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Abstract
本发明公开了一种P型PERC双面太阳电池的制作方法,其特征在于包括以下步骤:①晶硅表面制绒;②扩散;③去PSG和单晶抛光;④背面沉淀钝化膜;⑤正面沉积减反射膜;⑥背面激光刻划接触区;⑦背面印刷背电极和铝栅线;⑧正面印刷银栅线;⑨高温烧结。本发明对传统产线进行改造升级,实现太阳电池产品由单面太阳电池向双面太阳电池的转变,增加太阳电池的PN结面积,提高太阳光的利用率,增加太阳电池的闭路电流,达到提高效率的目的。双面PERC电池铝浆料用量约为单面PERC电池的20‑30%。
Description
技术领域
本发明公开了一种晶硅太阳电池的制作方法,具体涉及一种P型PERC双面太阳电池的制作方法。
背景技术
从现在太阳电池发展环境上来说,随着太阳电池的发展,设备折旧和效率提升是越来越多的生产企业必须关注的重点问题,在不改变现有设备或者经过设备改造的方法提高现有产线的效率、提高产能是企业生存发展的动力;设备的整合和再利用也是减少固定资产浪费、提高企业竞争的一种方法。
国家能源局推出的光伏“超级领跑者”计划,涉及到较多新型高效产品,其中包括双面电池组件。几乎每个光伏制造商都将双面电池/双面组件列在其战略计划之中,双面电池也是目前最简单也最具成本效益的电池,不仅双面具备光的转换利用且不需要增加额外工序。
发明内容
本发明的目的就是对传统产线进行改造升级,实现太阳电池产品由单面太阳电池向双面太阳电池的转变,增加太阳电池的PN结面积,提高太阳光的利用率,增加太阳电池的闭路电流,达到提高效率的目的。
技术方案:
一种P型PERC双面太阳电池的制作方法,包括以下步骤:
①晶硅表面制绒:选择P型硅片,对选择的P型硅片的双面在碱液下进行表面绒面化,然后在酸性条件下进行化学清洗,除去表面杂质;
②扩散:采用B、P共扩工艺,正面P扩散,背面B扩散,硅片两片为一组,每组硅片采用竖直背靠背的方式进行扩散,两片硅片背面之间***纸状固态源B源,正面采用通三氯氧磷的方式进行正面磷扩散;推进扩散炉在进行高温共扩散,使硅片的正面形成n+掺杂层,背面形成p+掺杂层;
③去PSG和单晶抛光:刻蚀工序清洗去除硅片表面残留的磷硅玻璃和单晶背面抛光;
④背面沉淀钝化膜:背面单面依次沉积氧化铝/氮化硅叠层膜;
⑤正面沉积减反射膜:正面沉积氮化硅减反射膜;
⑥背面激光刻划接触区:背面局部打开薄膜,背面激光图形设计:光斑直径:10-35μm,激光线的间距:500-700μm;
⑦背面印刷背电极和铝栅线,背面采用铝栅线设计,铝背场网版设计:铝栅线宽度:100-300μm,副栅根数:96-115根;
⑧正面印刷银栅线;
⑨高温烧结。
优选的,步骤⑥中,光斑直径为10μm,激光线的间距为500μm。
优选的,步骤⑥中,光斑直径为20μm,激光线的间距为600μm。
优选的,步骤⑥中,光斑直径为35μm,激光线的间距为700μm。
优选的,步骤⑦中,铝栅线宽度:100μm,副栅根数:96根。
优选的,步骤⑦中,铝栅线宽度:200μm,副栅根数:105根。
优选的,步骤⑦中,铝栅线宽度:300μm,副栅根数:115根。
具体的,步骤①中,化学清洗的具体步骤为:用质量分数为1.2±0.2%的氢氧化钠或氢氧化钾溶液在80±2℃下对P型硅片表面进行化学腐蚀,制备出金字塔形状的绒面,随后用质量分数为15±3%的氢氟酸进行清洗。
具体的,步骤②中,纸状固态源B源的厚度为1μm-100μm,三氯氧磷的流速为1000±200sccm。
具体的,步骤②中,高温共扩散工艺为840±30℃。
本发明的有益效果
本发明的有益效果为:本发明的一种P型PERC双面太阳电池的制作方法,对传统产线进行改造升级,实现太阳电池产品由单面太阳电池向双面太阳电池的转变,增加太阳电池的PN结面积,提高太阳光的利用率,增加太阳电池的闭路电流,达到提高效率的目的。双面PERC电池铝浆料用量约为单面PERC电池的20-30%。
更进一步的,本发明在扩散工艺中采用B、P共扩工艺,正面沉积n型扩散源,背面沉积P型扩散源,背面正面共掺杂工艺,高温扩散后形成N+pp+结构,一步到位即可形成完整的,减少的工序,节约了成本,提高了效率。
为了进一步保证步骤②中,纸状固态源扩散方式的均匀性,本发明对步骤①中制绒及清洗进行了具体的工艺限定,以保证清洗的洁净度。
附图说明
图1为本发明制作方法的流程示意图。
具体实施方式
下面结合实施例对本发明作进一步说明,但本发明的保护范围不限于此:
实施例1:
一种P型PERC双面太阳电池的制作方法,包括以下步骤:
①晶硅表面制绒:选择P型硅片,对选择的P型硅片的双面在碱液下进行表面绒面化,然后在酸性条件下进行化学清洗,除去表面杂质;
化学清洗的具体步骤为:用质量分数为1.0%的氢氧化钠或氢氧化钾溶液在78℃下对P型硅片表面进行化学腐蚀,制备出金字塔形状的绒面,随后用质量分数为12%的氢氟酸进行清洗。
②扩散:采用B、P共扩工艺,正面P扩散,背面B扩散,硅片两片为一组,每组硅片采用竖直背靠背的方式进行扩散,两片硅片背面之间***纸状固态源B源,正面采用通三氯氧磷的方式进行正面磷扩散;推进扩散炉在进行高温共扩散,使硅片的正面形成n+掺杂层,背面形成p+掺杂层;
纸状固态源B源的厚度为1μm,三氯氧磷的流速为800sccm。
高温共扩散工艺为810℃。
③去PSG和单晶抛光:刻蚀工序清洗去除硅片表面残留的磷硅玻璃和单晶背面抛光;
④背面沉淀钝化膜:背面单面依次沉积氧化铝/氮化硅叠层膜;
⑤正面沉积减反射膜:正面沉积氮化硅减反射膜;
⑥背面激光刻划接触区:背面局部打开薄膜,背面激光图形设计:光斑直径:10μm,激光线的间距:500μm;
⑦背面印刷背电极和铝栅线,背面采用铝栅线设计,铝背场网版设计:铝栅线宽度:100μm,副栅根数:96根;
⑧正面印刷银栅线;
⑨高温烧结。
实施例2:
一种P型PERC双面太阳电池的制作方法,包括以下步骤:
①晶硅表面制绒:选择P型硅片,对选择的P型硅片的双面在碱液下进行表面绒面化,然后在酸性条件下进行化学清洗,除去表面杂质;
化学清洗的具体步骤为:用质量分数为1.2%的氢氧化钠或氢氧化钾溶液在80℃下对P型硅片表面进行化学腐蚀,制备出金字塔形状的绒面,随后用质量分数为15%的氢氟酸进行清洗。
②扩散:采用B、P共扩工艺,正面P扩散,背面B扩散,硅片两片为一组,每组硅片采用竖直背靠背的方式进行扩散,两片硅片背面之间***纸状固态源B源,正面采用通三氯氧磷的方式进行正面磷扩散;推进扩散炉在进行高温共扩散,使硅片的正面形成n+掺杂层,背面形成p+掺杂层;
纸状固态源B源的厚度为50μm,三氯氧磷的流速为1000sccm。
高温共扩散工艺为840℃。
③去PSG和单晶抛光:刻蚀工序清洗去除硅片表面残留的磷硅玻璃和单晶背面抛光;
④背面沉淀钝化膜:背面单面依次沉积氧化铝/氮化硅叠层膜;
⑤正面沉积减反射膜:正面沉积氮化硅减反射膜;
⑥背面激光刻划接触区:背面局部打开薄膜,背面激光图形设计:光斑直径:20μm,激光线的间距:600μm;
⑦背面印刷背电极和铝栅线,背面采用铝栅线设计,铝背场网版设计:铝栅线宽度:200μm,副栅根数:105根;
⑧正面印刷银栅线;
⑨高温烧结。
实施例3:
一种P型PERC双面太阳电池的制作方法,包括以下步骤:
①晶硅表面制绒:选择P型硅片,对选择的P型硅片的双面在碱液下进行表面绒面化,然后在酸性条件下进行化学清洗,除去表面杂质;
化学清洗的具体步骤为:用质量分数为1.4%的氢氧化钠或氢氧化钾溶液在82℃下对P型硅片表面进行化学腐蚀,制备出金字塔形状的绒面,随后用质量分数为18%的氢氟酸进行清洗。
②扩散:采用B、P共扩工艺,正面P扩散,背面B扩散,硅片两片为一组,每组硅片采用竖直背靠背的方式进行扩散,两片硅片背面之间***纸状固态源B源,正面采用通三氯氧磷的方式进行正面磷扩散;推进扩散炉在进行高温共扩散,使硅片的正面形成n+掺杂层,背面形成p+掺杂层;
纸状固态源B源的厚度为100μm,三氯氧磷的流速为1200sccm。
高温共扩散工艺为870℃。
③去PSG和单晶抛光:刻蚀工序清洗去除硅片表面残留的磷硅玻璃和单晶背面抛光;
④背面沉淀钝化膜:背面单面依次沉积氧化铝/氮化硅叠层膜;
⑤正面沉积减反射膜:正面沉积氮化硅减反射膜;
⑥背面激光刻划接触区:背面局部打开薄膜,背面激光图形设计:光斑直径:35μm,激光线的间距:700μm;
⑦背面印刷背电极和铝栅线,背面采用铝栅线设计,铝背场网版设计:铝栅线宽度:300μm,副栅根数:115根;
⑧正面印刷银栅线;
⑨高温烧结。
采用上述实施例方法制备P型PERC双面太阳电池,实现了太阳电池产品由单面太阳电池向双面太阳电池的转变,增加太阳电池的PN结面积,提高太阳光的利用率,增加太阳电池的闭路电流,达到提高效率的目的。双面PERC电池铝浆料用量约为单面PERC电池的20-30%。
本文中所描述的具体实施例仅仅是对本发明精神做举例说明。本发明所属技术领域的技术人员可以对所描述的具体实施例做各种各样的修改或补充或采用类似的方式替代,但并不会偏离本发明的精神或者超越所附权利要求书所定义的范围。
Claims (7)
1.一种P型PERC双面太阳电池的制作方法,其特征在于包括以下步骤:
①晶硅表面制绒:选择P型硅片,对选择的P型硅片的双面在碱液下进行表面绒面化,然后在酸性条件下进行化学清洗,除去表面杂质;化学清洗的具体步骤为:用质量分数为1.2±0.2%的氢氧化钠或氢氧化钾溶液在80±2℃下对P型硅片表面进行化学腐蚀,制备出金字塔形状的绒面,随后用质量分数为15±3%的氢氟酸进行清洗;
②扩散:采用B、P共扩工艺,正面P扩散,背面B扩散,硅片两片为一组,每组硅片采用竖直背靠背的方式进行扩散,两片硅片背面之间***纸状固态源B源,正面采用通三氯氧磷的方式进行正面磷扩散;推进扩散炉在进行高温共扩散,使硅片的正面形成n+掺杂层,背面形成p+掺杂层;纸状固态源B源的厚度为1μm-100μm,三氯氧磷的流速为1000±200sccm;高温共扩散工艺为840±30℃;
③去PSG和单晶抛光:刻蚀工序清洗去除硅片表面残留的磷硅玻璃和单晶背面抛光;
④背面沉淀钝化膜:背面单面依次沉积氧化铝/氮化硅叠层膜;
⑤正面沉积减反射膜:正面沉积氮化硅减反射膜;
⑥背面激光刻划接触区:背面局部打开薄膜,背面激光图形设计:光斑直径:10-35μm,激光线的间距:500-700μm;
⑦背面印刷背电极和铝栅线,背面采用铝栅线设计,铝背场网版设计:铝栅线宽度:100-300μm,副栅根数:96-115根;
⑧正面印刷银栅线;
⑨高温烧结。
2.根据权利要求1所述的制作方法,其特征在于步骤⑥中,光斑直径为10μm,激光线的间距为500μm。
3.根据权利要求1所述的制作方法,其特征在于步骤⑥中,光斑直径为20μm,激光线的间距为600μm。
4.根据权利要求1所述的制作方法,其特征在于步骤⑥中,光斑直径为35μm,激光线的间距为700μm。
5.根据权利要求1所述的制作方法,其特征在于步骤⑦中,铝栅线宽度:100μm,副栅根数:96根。
6.根据权利要求1所述的制作方法,其特征在于步骤⑦中,铝栅线宽度:200μm,副栅根数:105根。
7.根据权利要求1所述的制作方法,其特征在于步骤⑦中,铝栅线宽度:300μm,副栅根数:115根。
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