CN107910393A - A kind of nanowire heterojunction solar cell and preparation method thereof - Google Patents

A kind of nanowire heterojunction solar cell and preparation method thereof Download PDF

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CN107910393A
CN107910393A CN201710990940.3A CN201710990940A CN107910393A CN 107910393 A CN107910393 A CN 107910393A CN 201710990940 A CN201710990940 A CN 201710990940A CN 107910393 A CN107910393 A CN 107910393A
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layer
solar cell
nano
nano wire
heterojunction solar
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余鹏
王志明
姬海宁
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University of Electronic Science and Technology of China
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The present invention discloses a kind of nanowire heterojunction solar cell and preparation method thereof, it is characterized in that, the solar cell includes the back electrode layer set gradually from down to up, substrate layer, barrier layer, nano wire layer, active layer, positive electrode layer, the material of the active layer is titanium dioxide or amorphous silicon hydride, the solar cell can suppress heterojunction nano-wire solar cell surface combined efficiency, so as to improve solar battery efficiency.

Description

A kind of nanowire heterojunction solar cell and preparation method thereof
Technical field
The present invention relates to a kind of area of solar cell, and in particular to a kind of nanowire heterojunction solar cell and its system Preparation Method.
Background technology
In recent years, as people are continuously increased energy demand, the solar energy as one of regenerative resource causes more next More concerns.Solar cell converts light energy into the hot spot that electric energy is increasingly becoming research.Crystal silicon cell is as the first generation Solar cell, has good transfer efficiency, and abundant raw materials are nontoxic, but the preparation energy recovery term of crystal silicon cell It is long, crystal silicon solar energy battery is realized that large-scale application cost is relatively low, then, occur being characterized at lower cost the Two generation hull cells, the silicon thin-film battery of one of them are just reduction of battery relative to crystal silicon cell, its obvious advantage Manufacturing cost, but the transfer efficiency of silicon thin-film battery is relatively low relative to silion cell.
2 μm of Si nano wires can absorb nearly 90% incident light.And Si substrates then need 200 μm.Therefore the nano wire sun Energy energy battery structure can reduce the use of material, and cost is greatly lowered.But the efficiency of current nanowire solar cells Can't be comparable with the performance of its substrate material, chief reason is exactly that nano wire introducing surface recombination reduces its electricity Performance, ultimately results in its efficiency and is not so good as substrate material.
The content of the invention
In view of this, the application, which provides one kind, can suppress heterojunction nano-wire solar cell surface combined efficiency, from And improve nanowire solar cells of solar battery efficiency and preparation method thereof.
To solve above technical problem, technical solution provided by the invention is a kind of nanowire heterojunction solar cell, It is characterized in that, the solar cell includes the back electrode layer set gradually from down to up, substrate layer, barrier layer, nano wire Layer, active layer, positive electrode layer, the material of the active layer is titanium dioxide or amorphous silicon hydride.
Preferably, the material of the substrate layer is indium phosphide.
It is because indium phosphide has relatively low table compared with silicon and GaAs that indium phosphide, which is selected, as the material of substrate layer Face combined efficiency and optimal band gap.
Preferably, the material on the barrier layer is silica.
Preferably, the barrier layer thickness is 20~40nm.
It is furthermore preferred that the thickness on the barrier layer is 30nm.
Preferably, be provided with periodically circular nano-pore on the barrier layer, the nano-pore a diameter of 120~ 160nm, cycle are 250~350nm.
It is furthermore preferred that a diameter of 140nm of the nano-pore, cycle 300nm.
Preferably, the material of the nano wire is indium phosphide, a diameter of the 130 of nano wire in the nano wire layer~ 200nm。
It is furthermore preferred that the nano wire uses diethyl zinc as p-type doped source, a diameter of 150nm of the nano wire.
Preferably, thickness is 5~50nm when the material of the active layer is titanium dioxide layer, and the material of the active layer is Thickness is 10~100nm during amorphous silicon hydride.
It is furthermore preferred that thickness is 5~30nm when the material of the active layer is titanium dioxide layer, the material of the active layer For amorphous silicon hydride when thickness be 20~80nm.
Preferably, the material of the back electrode layer is Ti/Au or Ti/Ag metals, thickness 100nm, the positive electrode The material of layer is ITO, thickness 100nm.
It is furthermore preferred that the material of the back electrode layer is Ti/Au or Ti/Ag metals, the thickness of Ti is 10nm, Au or Ag Thickness be 90nm.
Present invention also offers a kind of preparation method of nanowire heterojunction solar cell, it is characterised in that the system Preparation Method includes：
(1) substrate layer is provided, the material of the substrate layer is p-type indium phosphide；
(2) one layer of barrier layer is grown on the substrate layer, periodically circular nano-pore is formed on the barrier layer；
(3) nano wire layer is grown on the circular nano-pore on the barrier layer；
(4) the growth activity layer in the nanometer layer；
(5) positive electrode layer is grown on the active layer；
(6) back electrode layer is grown under the substrate layer.
(7) it is packaged into finished battery.
Preferably, the chemical vapour deposition technique of the barrier layer using plasma enhancing or Atomic layer deposition method life Long, the nano-pore is formed using electron beam exposure method, and the nano wire layer is grown using selection region epitaxy, the work Property layer using the vapour deposition process growth of Atomic layer deposition method or plasma enhanced chemical, the positive electrode layer and the back of the body Electrode layer is using the growth of the evaporation coating methods such as electron beam evaporation or magnetron sputtering.
It is furthermore preferred that chemical vapour deposition technique or atomic layer that the growth on the barrier layer can be strengthened with using plasma Deposition process, when the chemical vapour deposition technique growth of using plasma enhancing, depositing temperature is 250 DEG C, when using atom When deposition method is grown, depositing temperature is 75 DEG C.The nano wire layer is grown using selection region epitaxy, and growth apparatus is Molecular beam epitaxy growth apparatus or metallo-organic compound chemical gaseous phase deposition system, the growth of indium phosphide nano line use three Methyl indium and phosphorus source, the speed of growth are respectively 6.07 × 10-6Mol/min and 4.91 × 10-4Mol/min, is made using diethyl zinc For p-type doped source, doping speed is 2.06 × 10-5mol/min。
It is furthermore preferred that the material of the active layer can be titanium dioxide or amorphous silicon hydride, when active layer material is During titanium dioxide, grown using atomic layer deposition method, thickness 5-30nm, growth temperature is 100-300 DEG C；Work as active layer material For amorphous silicon hydride when, the chemical vapour deposition technique growth of using plasma enhancing, thickness 20-80nm, growth temperature is 200-350℃。
Compared with prior art, its detailed description is as follows by the application：
The present invention provides a kind of heterojunction of indium phosphide solar cell, which mainly includes p-type nano wire, and the two of N-shaped Titanium oxide or amorphous silicon hydride, since indium phosphide is also a kind of surface with relatively low (relative to Si, GaAs) in itself Recombination rate, and it is with optimal band gap, therefore substrate layer and nano wire use indium phosphide, while this in the application Activity can not only be served as active layer, titanium dioxide and amorphous silicon hydride using titanium dioxide and amorphous silicon hydride in application N doped layers, and the shortcomings that the surface recombination of nano wire can be suppressed.The high-selenium corn of nano wire can be utilized using the method Characteristic and suppress its surface recombination, so as to increase substantially the efficiency of nano wire solar cell.In addition, the nano wire in the application Layer is grown using selection region epitaxy, the introducing of metal impurities can be avoided using this method, so as to avoid metal conduct Defect, causes compound so as to reduce efficiency in the semiconductors.In conclusion nanowire heterojunction solar-electricity provided by the invention Pond solves the problems, such as to cause surface recombination so as to reduce battery efficiency since nano wire introduces in the prior art.
Brief description of the drawings
Fig. 1 is the barrier layer pattern knot formed described in the nanowire solar cells of the application offer on substrate layer Structure schematic diagram；Figure a is side view, and figure b is top view.
Fig. 2 is the finished product structure schematic diagram for the nanowire solar cells that the application provides；Figure a is side view, and figure b is top View.
Embodiment
In order to make those skilled in the art more fully understand technical scheme, with reference to specific embodiment pair The present invention is described in further detail.
A kind of nanowire heterojunction solar cell described herein, as shown in Fig. 2, including the back electrode set gradually Layer 6, substrate layer 1, barrier layer 2, nano wire layer 3, active layer 4, positive electrode layer 5, wherein the material of the substrate layer 1 is phosphatization Indium, the material on the barrier layer is silica, and thickness 30nm, forms periodically circular nano-pore on silica, A diameter of d of the nano-pore is 140nm, cycle 300nm, and a diameter of 150nm of nano wire, described in the nano wire layer Active layer is titanium dioxide or amorphous silicon hydride, and the thickness of titanium dioxide is 5-30nm, and the thickness of amorphous silicon hydride is 20- 80nm, the material of back electrode layer are Ti/Au or Ti/Ag metals, thickness 100nm.
Its preparation method comprises the following steps：
(1) substrate layer 1 is provided, the material of the substrate layer is indium phosphide；
(2) barrier layer 2, the circular nano-pore of growth periodicity on the barrier layer are grown on the substrate layer；
(3) nano wire layer 3 is grown on the circular nano-pore on the barrier layer；
(4) the growth activity layer 4 on the nano wire layer 3, the material of the active layer is titanium dioxide or hydrogenated amorphous Silicon；
(5) positive electrode layer 5 is grown on the active layer 4；
(6) in described 1 time growth back electrode layer 6 of substrate layer；
(7) encapsulation forms finished battery.
In order to verify the technique effect of technical scheme, on the basis of the requirement of above-mentioned embodiment, use Design parameter carries out verification experimental verification, obtains specific examples below.
Embodiment 1
As shown in Fig. 2, a kind of nanowire heterojunction solar cell described in the present embodiment, including the back of the body electricity set gradually Pole layer 6, substrate layer 1, barrier layer 2, nano wire layer 3, active layer 4, positive electrode layer 5.
Its preparation method is as follows：
(1) p-type InP substrate layer 1 is provided；
(2) one layer of SiO is grown using PECVD methods on the substrate layer 12Layer 2, depositing temperature are 250 DEG C, and thickness is 30nm。
(3) in the SiO2Periodically circular nano-pore is formed on layer 2, the nano-pore is formed by electron beam exposure Light method, a diameter of d of the nano-pore is 140nm, and in cycle 300nm, the nano-pore is periodicity hexagonal symmetric figure.
(4) in the SiO2Nano wire layer 3 is grown using selection region epitaxy (SAE) in circular nano-pore on layer 2, The material of the nano wire is InP, and the growth apparatus of the nano wire layer is MOCVD systems, the nano wire it is a diameter of 150nm, using diethyl zinc as p-type doped source, doping speed is 2.06 × 10-5Mol/min, the life of the InP nano wires Length uses trimethyl indium and phosphorus source, and speed is respectively 6.07 × 10-6Mol/min and 4.91 × 10-4mol/min。
(5) using ALD methods growth TiO on the nano wire layer 32Layer 4, the titanium dioxide layer thickness is 5nm, raw Long temperature is 300 DEG C.
(6) in the TiO2One layer of ITO layer 5 is grown using electron beam evaporation evaporation coating method on layer 4 and is used as positive electrode layer, it is thick Spend for 100nm.
(7) one layer of back electrode layer 6 is grown using electron beam evaporation evaporation coating method below the substrate layer 1, using Ti/Au Metal, thickness 10/90nm.
(8) encapsulation forms indium phosphide nano line heterojunction solar battery product.
Embodiment 2
It is different in following steps parameter setting based on embodiment 1, embodiment 2：
Step (5) is specially using ALD methods growth TiO in the nano wire layer 32Layer 4, the titanium dioxide layer thickness For 5nm, growth temperature is 100 DEG C.
Embodiment 3
It is different in following steps parameter setting based on embodiment 1, embodiment 3：
Step (5) is specially using ALD methods growth TiO in the nano wire layer 32Layer 4, the titanium dioxide layer thickness For 30nm, growth temperature is 100 DEG C.
Embodiment 4
It is different in following steps parameter setting based on embodiment 1, embodiment 4：
Step (5) is specially using ALD methods growth TiO in the nano wire layer 32Layer 4, the titanium dioxide layer thickness For 50nm, growth temperature is 200 DEG C.
Embodiment 5
It is different in following steps parameter setting based on embodiment 1, embodiment 5：
Step (4) is specially in the SiO2Using selection region epitaxy (SAE) growth in circular nano-pore on layer 2 Nano wire layer 3, the material of the nano wire is InP, and the growth apparatus of the nano wire layer is MBE systems, the nano wire A diameter of 180nm, using diethyl zinc as p-type doped source, doping speed is 2.06 × 10-5Mol/min, it is InP nanometers described The growth of line uses trimethyl indium and phosphorus source, and speed is respectively 6.07 × 10-6Mol/min and 4.91 × 10-4mol/min。
(5) using PECVD methods growth hydrogenated amorphous silicon layer 4, the amorphous silicon hydride thickness on the nano wire layer 3 It is 200 DEG C to spend for 20nm, growth temperature.
Embodiment 6
It is different in following steps parameter setting based on embodiment 1, embodiment 6：
Step (4) is specially in the SiO2Using selection region epitaxy (SAE) growth in circular nano-pore on layer 2 Nano wire layer 3, the material of the nano wire is InP, and the growth apparatus of the nano wire layer is MBE systems, the nano wire A diameter of 130nm, using diethyl zinc as p-type doped source, doping speed is 2.06 × 10-5Mol/min, it is InP nanometers described The growth of line uses trimethyl indium and phosphorus source, and speed is respectively 6.07 × 10-6Mol/min and 4.91 × 10-4mol/min。
(5) using PECVD methods growth hydrogenated amorphous silicon layer 4, the amorphous silicon hydride thickness on the nano wire layer 3 It is 350 DEG C to spend for 80nm, growth temperature.
Embodiment 7
It is different in following steps parameter setting based on embodiment 1, embodiment 7：
Step (4) is specially in the SiO2Using selection region epitaxy (SAE) growth in circular nano-pore on layer 2 Nano wire layer 3, the material of the nano wire is InP, and the growth apparatus of the nano wire layer is MBE systems, the nano wire A diameter of 200nm, using diethyl zinc as p-type doped source, doping speed is 2.06 × 10-5Mol/min, it is InP nanometers described The growth of line uses trimethyl indium and phosphorus source, and speed is respectively 6.07 × 10-6Mol/min and 4.91 × 10-4mol/min。
(5) using PECVD methods growth hydrogenated amorphous silicon layer 4, the amorphous silicon hydride thickness on the nano wire layer 3 It is 300 DEG C to spend for 100nm, growth temperature.
Embodiment 8
It is different in following steps parameter setting based on embodiment 1, embodiment 8：
Step (4) is specially in the SiO2Using selection region epitaxy (SAE) growth in circular nano-pore on layer 2 Nano wire layer 3, the material of the nano wire is InP, and the growth apparatus of the nano wire layer is MBE systems, the nano wire A diameter of 130nm, using diethyl zinc as p-type doped source, doping speed is 2.06 × 10-5Mol/min, it is InP nanometers described The growth of line uses trimethyl indium and phosphorus source, and speed is respectively 6.07 × 10-6Mol/min and 4.91 × 10-4mol/min。
(5) using PECVD methods growth hydrogenated amorphous silicon layer 4, the amorphous silicon hydride thickness on the nano wire layer 3 It is 200 DEG C to spend for 10nm, growth temperature.
Embodiment 9
It is different in following steps parameter setting based on embodiment 1, embodiment 9：
Step (2) is specially to grow one layer of SiO using ALD methods on the substrate layer 12Layer 2, depositing temperature 75 DEG C, thickness 30nm.
Step (3) is specially in the SiO2Periodically circular nano-pore is formed on layer 2, the formation of the nano-pore is adopted With electron beam exposure method, a diameter of d of the nano-pore is 120nm, and in cycle 250nm, the nano-pore is periodically six Angle symmetric figure.
Embodiment 10
It is different in following steps parameter setting based on embodiment 1, embodiment 10：
Step (2) is specially to grow one layer of SiO using ALD methods on the substrate layer 12Layer 2, depositing temperature 75 DEG C, thickness 30nm.
Step (3) is specially in the SiO2Periodically circular nano-pore is formed on layer 2, the formation of the nano-pore is adopted With electron beam exposure method, a diameter of d of the nano-pore is 160nm, and in cycle 350nm, the nano-pore is periodically six Angle symmetric figure.
Embodiment 11
It is different in following steps parameter setting based on embodiment 1, embodiment 11：
Step (6) is specifically in the TiO2One layer of ITO layer 5 is grown using magnetron sputtering evaporation coating method on layer 4 and is used as positive electricity Pole layer, thickness 100nm.
Step (7) is specially to grow one layer of back electrode layer using electric magnetron sputtering evaporation coating method below the substrate layer 1 6, using Ti/Ag metals, thickness 10/90nm.
Embodiment 12
To embodiment 1 --- 11 solar cells being prepared into carry out parametric measurement, and the battery of each embodiment is tested The parameter arrived is as shown in table 1, V in tableocRepresent open-circuit voltage (V), JscRepresent short circuit current flow (mA/cm2), FF represents fill factor, curve factor (%), EffRepresent photoelectric conversion efficiency (%).
The battery parameter of 1 each embodiment of table
Embodiment Voc Jsc FF Eff
1 0.73 32.1 0.8 18.74
2 0.72 33 0.79 17.77
3 0.75 35.4 0.81 21.5
4 0.73 34.6 0.79 19.95
5 0.74 30 0.72 15.95
6 0.74 31.2 0.74 17.08
7 0.76 31.2 0.8 18.97
8 0.69 28.2 0.73 14.2
9 0.7 29.8 0.75 15.64
10 0.73 31.1 0.76 17.88
11 0.74 32.1 0.78 18.67
The efficiency of nanowire heterojunction solar cell provided by the invention has bright it can be seen from the data in table 1 Aobvious to improve, the efficiency of current heterojunction nano-wire solar cell (being based on silicon materials) is 13% or so, the sun in the application Energy battery has reached more than 15%, and highest can reach 21.5%.
It the above is only the preferred embodiment of the present invention, it is noted that above-mentioned preferred embodiment is not construed as pair The limitation of the present invention, protection scope of the present invention should be subject to claim limited range.For the art For those of ordinary skill, without departing from the spirit and scope of the present invention, some improvements and modifications can also be made, these change Protection scope of the present invention is also should be regarded as into retouching.

Claims (10)

1. a kind of nanowire heterojunction solar cell, it is characterised in that the solar cell includes setting successively from down to up The back electrode layer put, substrate layer, barrier layer, nano wire layer, active layer, positive electrode layer, the material of the active layer is titanium dioxide Titanium or amorphous silicon hydride.
2. nanowire heterojunction solar cell according to claim 1, it is characterised in that the material of the substrate layer is Indium phosphide.
3. nanowire heterojunction solar cell according to claim 1, it is characterised in that the material on the barrier layer is Silica.
4. nanowire heterojunction solar cell according to claim 1, it is characterised in that the barrier layer thickness is 20 ~40nm.
5. nanowire heterojunction solar cell according to claim 1, it is characterised in that be provided with the barrier layer Periodically circular nano-pore, a diameter of 120~160nm of the nano-pore, the cycle is 250~350nm.
6. nanowire heterojunction solar cell according to claim 1, it is characterised in that the material of the nano wire is Indium phosphide, a diameter of 130~200nm of nano wire in the nano wire layer.
7. nanowire heterojunction solar cell according to claim 1, it is characterised in that the material of the active layer is Thickness is 5~50nm during titanium dioxide layer, and thickness is 10~100nm when the material of the active layer is amorphous silicon hydride.
8. nanowire heterojunction solar cell according to claim 1, it is characterised in that the material of the back electrode layer is Ti/Au or Ti/Ag metals, thickness 100nm, the material of the positive electrode layer is ITO, thickness 100nm.
9. a kind of preparation method of nanowire heterojunction solar cell, it is characterised in that the preparation method includes：
(1) substrate layer is provided, the material of the substrate layer is p-type indium phosphide；
(2) one layer of barrier layer is grown on the substrate layer, periodically circular nano-pore is formed on the barrier layer；
(3) nano wire layer is grown on the circular nano-pore on the barrier layer；
(4) the growth activity layer in the nanometer layer；
(5) positive electrode layer is grown on the active layer；
(6) back electrode layer is grown under the substrate layer；
(7) it is packaged into finished battery.
10. preparation method according to claim 9, it is characterised in that the change of the barrier layer using plasma enhancing Learn vapour deposition process or Atomic layer deposition method growth, the nano-pore are formed using electron beam exposure method, the nano wire Layer is grown using selection region epitaxy, and the active layer uses the gas phase of Atomic layer deposition method or plasma enhanced chemical Sedimentation is grown, and the positive electrode layer and the back electrode layer are using the growth of the evaporation coating methods such as electron beam evaporation or magnetron sputtering.
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110265502A (en) * 2019-06-13 2019-09-20 深圳市科创数字显示技术有限公司 A kind of silicon substrate indium nitride solar battery and preparation method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102157577A (en) * 2011-01-31 2011-08-17 常州大学 Nanometer silicon/monocrystalline silicon heterojunction radial nanowire solar cell and preparation method thereof
CN102169910A (en) * 2011-01-14 2011-08-31 南开大学 Thin film solar cell based on sulfur compound nanocrystalline
CN103367512A (en) * 2013-06-27 2013-10-23 中国科学院等离子体物理研究所 Solar battery based on inorganic bulk heterojunction and preparation method thereof
CN107230733A (en) * 2017-06-02 2017-10-03 电子科技大学 A kind of nanowire heterojunction solar cell and preparation method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102169910A (en) * 2011-01-14 2011-08-31 南开大学 Thin film solar cell based on sulfur compound nanocrystalline
CN102157577A (en) * 2011-01-31 2011-08-17 常州大学 Nanometer silicon/monocrystalline silicon heterojunction radial nanowire solar cell and preparation method thereof
CN103367512A (en) * 2013-06-27 2013-10-23 中国科学院等离子体物理研究所 Solar battery based on inorganic bulk heterojunction and preparation method thereof
CN107230733A (en) * 2017-06-02 2017-10-03 电子科技大学 A kind of nanowire heterojunction solar cell and preparation method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110265502A (en) * 2019-06-13 2019-09-20 深圳市科创数字显示技术有限公司 A kind of silicon substrate indium nitride solar battery and preparation method thereof

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