CN107910145A - A kind of embedded varistor and its manufacture craft - Google Patents
A kind of embedded varistor and its manufacture craft Download PDFInfo
- Publication number
- CN107910145A CN107910145A CN201710947845.5A CN201710947845A CN107910145A CN 107910145 A CN107910145 A CN 107910145A CN 201710947845 A CN201710947845 A CN 201710947845A CN 107910145 A CN107910145 A CN 107910145A
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- China
- Prior art keywords
- varistor
- embedded
- preparation process
- mould
- less
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
- H01C7/12—Overvoltage protection resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/02—Apparatus or processes specially adapted for manufacturing resistors adapted for manufacturing resistors with envelope or housing
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Thermistors And Varistors (AREA)
Abstract
The invention discloses a kind of embedded varistor and its preparation process, technique includes step：1) insulated plastic is softened using hot melt container；2) plastic liquid after softening is inputted to the varistor shell for being placed with the voltage dependent resistor chip that electrode is welded to prepare to heat in mould and kept, obtain embedded varistor primary product；3) the embedded varistor primary product after being kept in step 2) are cooled and solidified, prepares in mould and take out from varistor shell, obtain embedded varistor finished product.Varistor mould piezoresistive element in the block of the present invention uses embedded encapsulation, save all multiple operation and material commonly encapsulated, production procedure is greatly shortened, varistor mould piezoresistive element in the block uses embedded encapsulation, and encapsulated layer can be used for assembling other elements, be not easily deteriorated, its is simple and compact for structure, it is safe, the varistor module of various specifications can be made as needed, it is applied widely.
Description
Technical field
The present invention relates to industrial electric technical field, more particularly to a kind of insertion for overvoltage protection and suppression surge
Formula varistor and its manufacture craft.
Background technology
Zinc-oxide piezoresistor has excellent conductive characteristic, is widely used in electric wiring, equipment and needs overvoltage
In the element of protection and suppression surge, influence of the abnormal factors in circuit to load can be effectively reduced.If but abnormal mistake
Voltage frequently occurs, and piezoresistor will be deteriorated or even failed.
At present, the varistor of in the market is encapsulated using epoxy resin enclosed or silicate more, and uses dip-coating or spraying
Mode, the size of product is difficult to ensure that precision, especially those products for needing to make window in encapsulating layer surface, to lightning protection
The assembled belt of protector carrys out very big difficulty, and encapsulating production process is more, and efficiency is low, of high cost.
The content of the invention
Based on the deficiencies of the prior art, it is an object of the invention to provide a kind of embedded varistor and its preparation work
Skill, the encapsulated layer of the piezoresistive element made by the technique can be used for assembling other elements, and be not easily deteriorated, the letter of its structure
It is single compact, it is safe, the varistor module of various specifications can be made as needed, it is applied widely.
To achieve the above object, the technical scheme is that：
A kind of preparation process of embedded varistor, it is characterised in that including step：
1) insulated plastic is softened using hot melt container；
2) plastic liquid after softening is inputted to the varistor shell for placing voltage dependent resistor chip to prepare in mould and added
Heat is kept, and obtains embedded varistor primary product；
3) the embedded varistor primary product after being kept in step 2) are cooled and solidified, is prepared from varistor shell
Taken out in mould, obtain embedded varistor finished product.
Preferably, temperature when in step 1) using hot melt container softening insulated plastic is 60 DEG C -200 DEG C.
Preferably, the retention time is not less than 50S in step 2), keeps temperature to be not less than 150 DEG C, keeps pressure to be not less than
50bar。
Preferably, the cured time is not less than 1h in step 3), and solidification temperature is not less than 100 DEG C.
Further, including voltage dependent resistor chip and by being encapsulated in the varistor made of injection or die-casting process
Embedded encapsulated layer outside chip.
Further, the embedded encapsulated layer is insulation encapsulated layer, which is made of insulating material.
Further, the insulating material includes thermosetting plastics or thermoplastic.
Preferably, temperature when in step 1) using hot melt container softening insulated plastic is 80 DEG C -100 DEG C.
Preferably, the retention time uses 120S in step 2), keeps temperature to use 180 DEG C, keeps pressure to use 60bar.
Preferably, the cured time uses 6h in step 3), and solidification temperature uses 150 DEG C.
Beneficial effects of the present invention are：Varistor mould piezoresistive element in the block uses embedded encapsulation, saves general
The all multiple operation and material of logical encapsulation, production procedure are greatly shortened, and product quality and appearance improve a lot, varistor mould
Piezoresistive element in the block uses embedded encapsulation, and encapsulated layer can be used for assembling other elements, and be not easily deteriorated, the letter of its structure
It is single compact, it is safe, the varistor module of various specifications can be made as needed, it is applied widely.
Brief description of the drawings
Fig. 1 contains two metal electrical pins in same level for specific embodiment of the invention voltage dependent resistor chip
Structure diagram；
Fig. 2 contains two not metal electrical pins in same level for specific embodiment of the invention voltage dependent resistor chip
Structure diagram；
Fig. 3 is the structure diagram that specific embodiment of the invention varistor contains a metal electrical pin；
Fig. 4 is specific embodiment of the invention varistor without the structure diagram for drawing metal electrical pin；
Fig. 5 is the structure that the embedded encapsulated layer of the specific embodiment of the invention contains the installing component for being useful for assembling other elements
Schematic diagram.
Embodiment
Carried out clearly below with reference to the technique effect of the design of embodiment and attached drawing to the present invention, concrete structure and generation
Chu, be fully described by, to be completely understood by the purpose of the present invention, feature and effect.Obviously, described embodiment is this hair
Bright part of the embodiment, rather than whole embodiments, those skilled in the art is without creative efforts
The other embodiment obtained, belongs to the scope of protection of the invention.
A kind of preparation process of embedded varistor, it is characterised in that including step：
1) insulated plastic is softened using hot melt container；
2) plastic liquid after softening is inputted to being placed with outside the varistor for the voltage dependent resistor chip that electrode is welded
Shell is prepared to heat in mould and kept, and obtains embedded varistor primary product；
3) the embedded varistor primary product after being kept in step 2) are cooled and solidified, is prepared from varistor shell
Taken out in mould, obtain embedded varistor finished product.
Hot melting temperature when melting insulated plastic using hot melt container in step 1) is 60 DEG C -200 DEG C, preferable selection
At 80 DEG C -100 DEG C, 80 DEG C are more preferably selected.
By controlling hot melting temperature at 60 DEG C, 80 DEG C, 90 DEG C, 100 DEG C and 200 DEG C, hot melt effect well is all achieved
Fruit.
Plastic liquid injection varistor shell is prepared in mould by injection-tube in step 2), the retention time after injection
Not less than 50S, keep temperature to be not less than 150 DEG C, keep pressure to be not less than 50bar.It is preferable retention time 120S, preferable to protect
180 DEG C of temperature is held, it is preferable to keep pressure 60bar
The present embodiment prepares mould in plastic liquid injection varistor shell, after injection the retention time have selected 50S,
Several times such as 120S and 200S, 300S, selected again in each retention time 150 DEG C of holding temperature, 180 DEG C, 280 DEG C, 300
DEG C etc. several temperature, in addition keep pressure also to have selected several pressure such as 50bar, 60bar, 70bar, 80bar and operated,
All achieve good effect.
The cured time is not less than 1h in step 3), and solidification temperature is not less than 100 DEG C.Preferable hardening time is 6h, excellent
150 DEG C of of solidification temperature of choosing
The present embodiment employs 1h, 6h, 7h, 8h in selection in hardening time and tests, and all achieves solid well
Change effect.
100 DEG C, 150 DEG C, 200 DEG C and 300 DEG C are employed in the selection of solidification temperature, also all achieves good curing
Effect.
It is assemblied in voltage dependent resistor chip before varistor shell prepares mould, it is also necessary to by electrode and varistor core
Piece welds together.
By embedded varistor made of above-mentioned manufacture craft, including voltage dependent resistor chip 1 and by being molded or pressing
The embedded encapsulated layer 2 being encapsulated in made of casting process outside voltage dependent resistor chip, voltage dependent resistor chip 1 include the set gradually
One electrode 11, metal layer 12 and second electrode 13, first electrode is solderable to be connected to the first metal electrical pin 111, can not also weld
Metal electrode pin, second electrode 13 is solderable to be connected to the second metal electrical pin 131.
As depicted in figs. 1 and 2, it is the situation containing two metal electrical pins, metal electrical pin draws embedded bag
Outside sealing.
As shown in figure 3, the encapsulating structure for the voltage dependent resistor chip containing an electrical pin.
As described in Figure 4, the embedded varistor drawn for no metal electrical pin.
As shown in figure 5, for containing a metal electrical pin, and embedded encapsulated layer is protruding with for assembling other yuan
The installing component 3 of part.
Encapsulated layer windowing face 4 is may be provided with embedded encapsulated layer above, encapsulated layer windowing face 4 can be used for welding low temperature
Thread off or welding low-temperature electrodes, embedded encapsulated layer are insulation encapsulated layer, which is made of insulating material, insulate
Property material includes thermosetting plastics or thermoplastic.
It should be noted that described above is presently preferred embodiments of the present invention, the invention is not limited in above-mentioned
Embodiment, as long as it reaches the technique effect of the present invention with identical means, should all belong to protection scope of the present invention.
Claims (10)
1. a kind of preparation process of embedded varistor, it is characterised in that including step：
1) insulated plastic is softened using hot melt container；
2) plastic liquid after softening is inputted to the varistor shell for placing voltage dependent resistor chip to prepare to heat in mould and protected
Hold, obtain embedded varistor primary product；
3) the embedded varistor primary product after being kept in step 2) are cooled and solidified, mould is prepared from varistor shell
Middle taking-up, obtains embedded varistor finished product.
2. the preparation process of embedded varistor as claimed in claim 1, it is characterised in that：Held in step 1) using hot melt
Temperature when device softens insulated plastic is 60 DEG C -200 DEG C.
3. the preparation process of embedded varistor as claimed in claim 1, it is characterised in that：The retention time is not in step 2)
Less than 50S, keep temperature to be not less than 150 DEG C, keep pressure to be not less than 50bar.
4. the preparation process of embedded varistor as claimed in claim 1, it is characterised in that：The cured time in step 3)
Not less than 1h, solidification temperature is not less than 100 DEG C.
A kind of 5. embedded pressure-sensitive electricity prepared by preparation process by the embedded varistor of claim 1-4 any one of them
Resistance, it is characterised in that：Including voltage dependent resistor chip and by being encapsulated in the varistor core made of injection or die-casting process
Embedded encapsulated layer outside piece.
6. embedded varistor as claimed in claim 5, it is characterised in that：The embedded encapsulated layer is encapsulated for insulation
Layer, the insulation encapsulated layer are made of insulating material.
7. embedded varistor as claimed in claim 6, it is characterised in that：The insulating material includes thermosetting plastics
Or thermoplastic.
8. the preparation process of embedded varistor as claimed in claim 1, it is characterised in that：Held in step 1) using hot melt
Temperature when device softens insulated plastic is 80 DEG C -100 DEG C.
9. the preparation process of embedded varistor as claimed in claim 3, it is characterised in that：The retention time adopts in step 2)
With 120S, keep temperature to use 180 DEG C, keep pressure to use 60bar.
10. the preparation process of embedded varistor as claimed in claim 4, it is characterised in that：When cured in step 3)
Between use 6h, solidification temperature uses 150 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710947845.5A CN107910145A (en) | 2017-10-12 | 2017-10-12 | A kind of embedded varistor and its manufacture craft |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710947845.5A CN107910145A (en) | 2017-10-12 | 2017-10-12 | A kind of embedded varistor and its manufacture craft |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107910145A true CN107910145A (en) | 2018-04-13 |
Family
ID=61840484
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710947845.5A Pending CN107910145A (en) | 2017-10-12 | 2017-10-12 | A kind of embedded varistor and its manufacture craft |
Country Status (1)
| Country | Link |
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| CN (1) | CN107910145A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110349720A (en) * | 2018-04-04 | 2019-10-18 | 爱普科斯电子元器件(珠海保税区)有限公司 | Metal-oxide varistor and its manufacturing method |
| CN112712952A (en) * | 2020-12-18 | 2021-04-27 | 厦门赛尔特电子有限公司 | Encapsulation molding method of piezoresistor |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101246768A (en) * | 2007-12-13 | 2008-08-20 | 上海长园维安电子线路保护股份有限公司 | Surface labeling type polymer PTC senistor and manufacturing method thereof |
| CN102110505A (en) * | 2010-12-16 | 2011-06-29 | 陈小诚 | Mould pressing plastic package method for resistance network |
| CN103013153A (en) * | 2012-12-13 | 2013-04-03 | 深圳市辰驹电子科技有限公司 | Packaging material for piezoresistor and low voltage arrester and manufacture method of packaging material |
| CN205004121U (en) * | 2015-10-11 | 2016-01-27 | 广东百圳君耀电子有限公司 | Height endures type paster piezo -resistor |
-
2017
- 2017-10-12 CN CN201710947845.5A patent/CN107910145A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101246768A (en) * | 2007-12-13 | 2008-08-20 | 上海长园维安电子线路保护股份有限公司 | Surface labeling type polymer PTC senistor and manufacturing method thereof |
| CN102110505A (en) * | 2010-12-16 | 2011-06-29 | 陈小诚 | Mould pressing plastic package method for resistance network |
| CN103013153A (en) * | 2012-12-13 | 2013-04-03 | 深圳市辰驹电子科技有限公司 | Packaging material for piezoresistor and low voltage arrester and manufacture method of packaging material |
| CN205004121U (en) * | 2015-10-11 | 2016-01-27 | 广东百圳君耀电子有限公司 | Height endures type paster piezo -resistor |
Non-Patent Citations (3)
| Title |
|---|
| 卞军: "《塑料成型原理及工艺》", 31 August 2015, 西南交通大学出版社 * |
| 洪慎章: "《实用注塑模设计与制造》", 28 February 2016, 机械工业出版社 * |
| 温变英: "《高分子材料加工（第二版）》", 30 June 2016, 中国轻工业出版社 * |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110349720A (en) * | 2018-04-04 | 2019-10-18 | 爱普科斯电子元器件(珠海保税区)有限公司 | Metal-oxide varistor and its manufacturing method |
| CN112712952A (en) * | 2020-12-18 | 2021-04-27 | 厦门赛尔特电子有限公司 | Encapsulation molding method of piezoresistor |
| WO2022127151A1 (en) * | 2020-12-18 | 2022-06-23 | 厦门赛尔特电子有限公司 | Varistor encapsulation molding method |
| CN112712952B (en) * | 2020-12-18 | 2022-07-08 | 厦门赛尔特电子有限公司 | Packaging and forming method of piezoresistor |
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Application publication date: 20180413 |