CN107904565A - The preparation method of Cu In Ga Se compound rotary target materials - Google Patents
The preparation method of Cu In Ga Se compound rotary target materials Download PDFInfo
- Publication number
- CN107904565A CN107904565A CN201711024459.5A CN201711024459A CN107904565A CN 107904565 A CN107904565 A CN 107904565A CN 201711024459 A CN201711024459 A CN 201711024459A CN 107904565 A CN107904565 A CN 107904565A
- Authority
- CN
- China
- Prior art keywords
- rotary target
- target material
- powders
- preparation
- compounds
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a kind of preparation method of Cu In Ga Se compound rotary target materials, including：Cu In Ga Se powders will be prepared without magnetic tube part as matrix, wherein, copper, indium, gallium, the molar ratio of selenium are 1 in Cu In Ga Se powders:(0.3~2):(0.1~1):(1~3)；Using supersonic cold gas spray technology by Cu In Ga Se powders after the pre-treatment outer surface of matrix spraying, deposit thickness be no more than 20mm, further improve density using isostatic cool pressing technology；The rotary target material blank of respective organization structure is obtained by high temperature sintering, rotary target material is obtained after handling rotary target material blank.The internal density for the Cu In Ga Se materials that the present invention obtains is uniform, is conducive to the formation of good plated film, reduces the defect rate of solar product.
Description
Technical field
The present invention relates to a kind of photoelectric material technology, specifically, is related to a kind of Cu-In-Ga-Se compounds rotary target material
Preparation method.
Background technology
Solar cell passes through the development of nearly 20 years, is developed from silicon wafer system to compound film direction.Silicon wafer system light turns
Efficiency is changed at present up to more than 17%, but its manufacture is of high cost.Whole industry is in early period due to preparing polysilicon, monocrystalline silicon consumption
The substantial amounts of energy, to environment brings large effect.In thin-film solar cells technical process, Cu-In-Ga- has been used
Se compounds make that the production of solar cell is simpler, and cost of investment is lower as one of use in magnetron sputtering coating target, production
Cost smaller, final products cost are lower.
At present, the market demand of China and Asian-Pacific area target exceedes the 70% of world's aggregate demand, and market prospects are wide
It is wealthy.But the method for preparing target is of high cost, target density is not uniform enough, of high cost, and stock utilization is no more than 40%.
The content of the invention
Technical problem solved by the invention is to provide a kind of preparation method of Cu-In-Ga-Se compounds rotary target material,
The internal density of Cu-In-Ga-Se materials is uniform, is conducive to the formation of good plated film, reduces the defect rate of solar product.
Technical solution is as follows：
A kind of preparation method of Cu-In-Ga-Se compounds rotary target material, including：
Cu-In-Ga-Se powders will be prepared without magnetic tube part as matrix, wherein, copper in Cu-In-Ga-Se powders, indium,
Gallium, the molar ratio of selenium are 1:(0.3~2):(0.1~1):(1~3)；
The outer surface of matrix of Cu-In-Ga-Se powders after the pre-treatment is sprayed using supersonic cold gas spray technology, deposition
Layer thickness is no more than 20mm, and density is further improved using isostatic cool pressing technology；
The rotary target material blank of respective organization structure is obtained by high temperature sintering, after handling rotary target material blank
To rotary target material.
Further：No magnetic tube part is pre-processed, and connection spiral shell button is processed at both ends on request, and its surface is sprayed
Sand, cleaning, drying and processing.
Further：No magnetic tube part selects non-magnetic stainless steel tube, metal copper pipe, metal titanium tube, nickel chromium triangle pipe or nickel aluminum pipe.
Further：1~5 μm of the particle mean size of Cu-In-Ga-Se powders, purity is miscellaneous between 99.9%~99.999%
Matter total content is less than 1000ppm, and single impurity element is less than 500ppm.
Further：Under helium or nitrogen protection atmosphere, Cu-In-Ga-Se powders are sent to Supersonic quickly cooling and sprayed by dust feeder
Painting technology rifle, in the case of no magnetic tube part keeps rotating, high-speed flow successively sprays Cu-In-Ga-Se powders by scan mode
Penetrate in matrix surface, 1~5 μm every layer, until Cu-In-Ga-Se layers of accumulation reach 5~20mm, be cooled to room temperature；Cold spraying into
Gas pressure intensity is 2~3MPa at mouthful, and gas temperature is 300~400 DEG C；Work gas is heated to 400~600 DEG C, it is pressurized to 3~
5MPa；Jet length is 30~55mm.
Further：The outer surface of matrix for coating Cu-In-Ga-Se accumulation horizons wraps up one layer of anti-seepage material, cold etc. quiet
The processing of press mesohigh, pressure are no more than 1000MPa.
Further：In atmosphere protection stove, high temperature sintering obtains the rotary target material blank of respective organization structure, protective gas
For argon gas or nitrogen, 500~900 DEG C of temperature, when heating treatment time 5 is small, target relative density 96%~98%.
Further：The shape of product of rotary target material is tubular, Cu-In-Ga-Se thickness ＜ 20mm, and flatness is less than
0.15mm。
Compared with prior art, the technology of the present invention effect includes：
Rotary target material produced by the present invention has consistency height, segregation-free, even tissue, crystal grain is tiny, porosity is low etc.
Advantage, its manufacture method have the advantages that technological process is short, and controllability is good, and production cost is low, and production efficiency is high.
1st, in the present invention, the internal density of Cu-In-Ga-Se materials is uniform, is conducive to the formation of good plated film, reduces too
The defect rate of positive energy product；Rotary target material prepared by the present invention, the utilization rate of material can be more than 80%, and stock utilization carries
Height can significantly reduce production cost, strengthen the market competitiveness of product.
2nd, in preparation process of the present invention, Cu-In-Ga-Se compounds have been used as use in magnetron sputtering coating target
One of, make that the production of solar cell is simpler, and cost of investment is lower, production cost smaller, final products cost is lower, more preferably
Ground utilizes solar energy.Target purity, impurity content, density, the physical dimension of preparation can reach the requirement of practical application.
Embodiment
Elaborate below with reference to example embodiment to technical solution of the present invention.However, example embodiment can
Implement in a variety of forms, and be not understood as limited to embodiment set forth herein；On the contrary, these embodiments are provided so that
The design of example embodiment more comprehensively and completely, and is comprehensively communicated to those skilled in the art by the present invention.
The preparation method of Cu-In-Ga-Se compound rotary target materials, comprises the following steps that：
Step 1：Cu-In-Ga-Se powders will be prepared without magnetic tube part as matrix, wherein, in Cu-In-Ga-Se powders
Copper, indium, gallium, the molar ratio of selenium are 1:(0.3~2):(0.1~1):(1~3)；
No magnetic tube part selects non-magnetic stainless steel tube, metal copper pipe, metal titanium tube, nickel chromium triangle pipe or nickel aluminum pipe, size processed
Reach requirement, connection spiral shell button is processed at both ends on request, and the pretreatment such as sandblasting, cleaning, drying is carried out to its surface.
1~5 μm of the particle mean size of Cu-In-Ga-Se powders, between 99.9%~99.999%, other elements are purity
Impurity, content of impurities are less than 1000ppm, and single impurity element is less than 500ppm.
Step 2：Using the outer surface of matrix of supersonic cold gas spray technology after the pre-treatment sprays, deposit thickness is no more than
20mm；Isostatic cool pressing technology is recycled to further improve density under super-pressure；
Under helium or nitrogen protection atmosphere, Cu-In-Ga-Se powders are sent to supersonic cold gas spray technology by dust feeder
Rifle, in the case of no magnetic tube part keeps rotating, Cu-In-Ga-Se powders are successively injected in base by high-speed flow by scan mode
Body surface face, until Cu-In-Ga-Se layers of accumulation reach 5~20mm, is cooled to room temperature by 1~5 μm every layer, wherein, cold spraying import
Place's gas pressure intensity is 2~3MPa, and gas temperature is 300~400 DEG C；Work gas is heated to 400~600 DEG C, it is pressurized to 3~
5MPa；Jet length is 30~55mm.
The outer surface of matrix for coating Cu-In-Ga-Se accumulation horizons wraps up one layer of anti-seepage material, in cold isostatic press
HIGH PRESSURE TREATMENT, pressure are no more than 1000MPa.
Step 3：The rotary target material blank of respective organization structure is obtained by high temperature sintering, at rotary target material blank
Rotary target material is obtained after reason.
In atmosphere protection stove, high temperature sintering obtains the rotary target material blank of respective organization structure, and protective gas is argon gas
Or nitrogen, 500~900 DEG C of temperature, when heating treatment time 5 is small, target relative density 96%~98%.To molding rotary target
Material blank is machined, and is cleaned again after completion of processing, dries and can obtain rotary target material finished product.The production of rotary target material
Product shape is tubular, Cu-In-Ga-Se thickness ＜ 20mm, and flatness is less than 0.15mm.
Embodiment 1：
A kind of preparation method of Cu-In-Ga-Se compounds rotary target material, specifically comprises the following steps：
(1) non-magnetic stainless steel tube is prepared, size is processed to reach requirement, and connection spiral shell is processed at both ends on request
Button, and the pretreatment such as sandblasting, cleaning, drying is carried out to its surface；
(2) dispensing, prepares Cu-In-Ga-Se powders, and copper, indium, gallium, the molar ratio of selenium are 1 in its powder:0.7:0.3:2；
(3) under nitrogen protection atmosphere, Cu-In-Ga-Se powders are sent to supersonic cold gas spray technology rifle by dust feeder,
In the case of non-magnetic stainless steel tube keeps rotating, high-speed flow is successively injected in Cu-In-Ga-Se powders by scan mode
Matrix surface, until Cu-In-Ga-Se layers of accumulation reach 7mm, is cooled to room temperature by 2 μm every layer, wherein, cold spraying entrance gas
Body pressure is 2MPa, and gas temperature is 300 DEG C；Work gas is heated to 400 DEG C, is pressurized to 3MPa；Jet length is 30~55mm；
(4) outer surface of matrix for coating Cu-In-Ga-Se accumulation horizons wraps up one layer of anti-seepage material, in cold isostatic press
Mesohigh processing, pressure 300MPa；
(5) in argon gas protection stove, high temperature sintering obtains the rotary target material blank of respective organization structure, and 600 DEG C of temperature, adds
When heat treatment time 5 is small, target relative density 96%；
(6) molding rotary target material blank is machined, cleaned again after completion of processing, dry it is i.e. available
Rotary target material finished product.
Embodiment 2：
A kind of preparation method of Cu-In-Ga-Se compounds rotary target material, specifically comprises the following steps：
(1) metal copper pipe is prepared, size is processed to reach requirement, and connection spiral shell button is processed at both ends on request, and
The pretreatment such as sandblasting, cleaning, drying is carried out to its surface；
(2) dispensing, prepares Cu-In-Ga-Se powders, and copper, indium, gallium, the molar ratio of selenium are 1 in its powder:0.35:0.15:
1.25；
(3) under helium protective atmosphere, Cu-In-Ga-Se powders are sent to supersonic cold gas spray technology rifle by dust feeder,
In the case of metal copper pipe keeps rotating, Cu-In-Ga-Se powders are successively injected in matrix by high-speed flow by scan mode
Surface, until Cu-In-Ga-Se layers of accumulation reach 11mm, is cooled to room temperature by 4 μm every layer, wherein, cold spraying entrance gas pressure
Strong is 3MPa, and gas temperature is 350 DEG C；Work gas is heated to 500 DEG C, is pressurized to 3.5MPa；Jet length is 30~55mm；
(4) outer surface of matrix for coating Cu-In-Ga-Se accumulation horizons wraps up one layer of anti-seepage material, in cold isostatic press
Mesohigh processing, pressure 500MPa；
(5) in nitrogen protection stove, high temperature sintering obtains the rotary target material blank of respective organization structure, and 600 DEG C of temperature, adds
When heat treatment time 5 is small, target relative density 98%；
(6) molding rotary target material blank is machined, cleaned again after completion of processing, dry it is i.e. available
Rotary target material finished product.
Embodiment 3：
A kind of preparation method of Cu-In-Ga-Se compounds rotary target material, specifically comprises the following steps：
(1) metal titanium tube is prepared, size is processed to reach requirement, and connection spiral shell button is processed at both ends on request, and
The pretreatment such as sandblasting, cleaning, drying is carried out to its surface；
(2) dispensing, prepares Cu-In-Ga-Se powders, and copper, indium, gallium, the molar ratio of selenium are 1 in its powder:1.4:0.6:
2.3；
(3) under helium protective atmosphere, Cu-In-Ga-Se powders are sent to supersonic cold gas spray technology rifle by dust feeder,
In the case of metal copper pipe keeps rotating, Cu-In-Ga-Se powders are successively injected in matrix by high-speed flow by scan mode
Surface, until Cu-In-Ga-Se layers of accumulation reach 15mm, is cooled to room temperature by 5 μm every layer, wherein, cold spraying entrance gas pressure
Strong is 3MPa, and gas temperature is 400 DEG C；Work gas is heated to 600 DEG C, is pressurized to 4.5MPa；Jet length is 30~55mm；
(4) one layer of anti-seepage material is wrapped up in the bushing pipe outer surface for coating Cu-In-Ga-Se accumulation horizons, in cold isostatic press
Mesohigh processing, pressure 700MPa；
(5) in argon gas protection stove, high temperature sintering obtains the rotary target material blank of respective organization structure, and 600 DEG C of temperature, adds
When heat treatment time 5 is small, target relative density 97%；
(6) molding rotary target material blank is machined, cleaned again after completion of processing, dry it is i.e. available
Rotary target material finished product.
Term used herein is explanation and exemplary and nonrestrictive term.Since the present invention can be with a variety of
Form specific implementation without departing from the spiritual or substantive of invention, it should therefore be appreciated that above-described embodiment be not limited to it is any foregoing
Details, and should widely being explained in the spirit and scope that appended claims are limited, thus fall into claim or its etc.
Whole changes and remodeling in the range of effect all should be appended claims and covered.
Claims (8)
1. a kind of preparation method of Cu-In-Ga-Se compounds rotary target material, including：
Cu-In-Ga-Se powders will be prepared without magnetic tube part as matrix, wherein, copper, indium, gallium, selenium in Cu-In-Ga-Se powders
Molar ratio be 1:(0.3~2):(0.1~1):(1~3)；
The outer surface of matrix of Cu-In-Ga-Se powders after the pre-treatment is sprayed using supersonic cold gas spray technology, deposition thickness
Degree is no more than 20mm, and density is further improved using isostatic cool pressing technology；
The rotary target material blank of respective organization structure is obtained by high temperature sintering, is revolved after handling rotary target material blank
Turn target.
2. the preparation method of Cu-In-Ga-Se compounds rotary target material as claimed in claim 1, it is characterised in that：Without magnetic tube part
Pre-processed, connection spiral shell button is processed at both ends on request, and carries out sandblasting, cleaning, drying and processing to its surface.
3. the preparation method of Cu-In-Ga-Se compounds rotary target material as described in claims 1 or 2, it is characterised in that：Without magnetic
Pipe fitting selects non-magnetic stainless steel tube, metal copper pipe, metal titanium tube, nickel chromium triangle pipe or nickel aluminum pipe.
4. the preparation method of Cu-In-Ga-Se compounds rotary target material as claimed in claim 1, it is characterised in that：Cu-In-Ga-
1~5 μm of the particle mean size of Se powders, for purity between 99.9%~99.999%, content of impurities is less than 1000ppm, single miscellaneous
Prime element is less than 500ppm.
5. the preparation method of Cu-In-Ga-Se compounds rotary target material as claimed in claim 1, it is characterised in that：In helium or
Under nitrogen protection atmosphere, Cu-In-Ga-Se powders are sent to supersonic cold gas spray technology rifle by dust feeder, are kept in no magnetic tube part
In the case of rotating, Cu-In-Ga-Se powders are successively injected in matrix surface, every layer of 1~5 μ by high-speed flow by scan mode
M, until Cu-In-Ga-Se layers of accumulation reach 5~20mm, is cooled to room temperature；Cold spraying entrance gas pressure intensity is 2~3MPa,
Gas temperature is 300~400 DEG C；Work gas is heated to 400~600 DEG C, is pressurized to 3~5MPa；Jet length is 30~55mm.
6. the preparation method of Cu-In-Ga-Se compounds rotary target material as claimed in claim 1, it is characterised in that：Coat Cu-
The outer surface of matrix of In-Ga-Se accumulation horizons wraps up one layer of anti-seepage material, and in the processing of cold isostatic press mesohigh, pressure does not surpass
Cross 1000MPa.
7. the preparation method of Cu-In-Ga-Se compounds rotary target material as claimed in claim 1, it is characterised in that：Protected in atmosphere
In furnace retaining, high temperature sintering obtains the rotary target material blank of respective organization structure, and protective gas is argon gas or nitrogen, and temperature 500~
900 DEG C, when heating treatment time 5 is small, target relative density 96%~98%.
8. the preparation method of Cu-In-Ga-Se compounds rotary target material as claimed in claim 1, it is characterised in that：Rotary target material
Shape of product be tubular, Cu-In-Ga-Se thickness ＜ 20mm, flatness is less than 0.15mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711024459.5A CN107904565B (en) | 2017-10-27 | 2017-10-27 | Preparation method of Cu-In-Ga-Se compound rotary target |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711024459.5A CN107904565B (en) | 2017-10-27 | 2017-10-27 | Preparation method of Cu-In-Ga-Se compound rotary target |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107904565A true CN107904565A (en) | 2018-04-13 |
| CN107904565B CN107904565B (en) | 2020-09-01 |
Family
ID=61842894
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711024459.5A Active CN107904565B (en) | 2017-10-27 | 2017-10-27 | Preparation method of Cu-In-Ga-Se compound rotary target |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107904565B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113862620A (en) * | 2021-09-17 | 2021-12-31 | 芜湖映日科技股份有限公司 | Preparation method of CIGS rotary sputtering target material |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102103959A (en) * | 2009-12-17 | 2011-06-22 | 通用电气公司 | Apparatus for X-ray generation and method of making same |
| CN103930591A (en) * | 2011-10-14 | 2014-07-16 | 株式会社爱发科 | Target assembly and production method therefor |
-
2017
- 2017-10-27 CN CN201711024459.5A patent/CN107904565B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102103959A (en) * | 2009-12-17 | 2011-06-22 | 通用电气公司 | Apparatus for X-ray generation and method of making same |
| CN103930591A (en) * | 2011-10-14 | 2014-07-16 | 株式会社爱发科 | Target assembly and production method therefor |
Non-Patent Citations (1)
| Title |
|---|
| 韩凤麟主编: "《粉末冶金基础教程 基本原理与应用[M]》", 30 June 2006 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113862620A (en) * | 2021-09-17 | 2021-12-31 | 芜湖映日科技股份有限公司 | Preparation method of CIGS rotary sputtering target material |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107904565B (en) | 2020-09-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103866319B (en) | Zr alloy surface prepares the laser cladding method of nickel base heat resistant wear-resistant coating | |
| CN106435564A (en) | Electromagnetic coating of high-performance cooker and manufacturing method of electromagnetic coating | |
| CN102815971B (en) | Hf (Ta) C ultra-high-temperature composite coating and preparation method thereof | |
| CN103060793A (en) | Refractory metal rotary sputtering target material prepared by cold spraying method | |
| CN106567045B (en) | The preparation method of tubular rotary HIGH-PURITY SILICON sputtering target material | |
| CN107022730A (en) | A kind of method of low-voltage plasma spraying TiN coatings | |
| CN107630184B (en) | A method of niobium silicide coating is prepared in niobium or niobium alloy surface | |
| CN110453186A (en) | A kind of rotation nichrome target and preparation method thereof | |
| CN104862654A (en) | Integrated large-sized high-purity superconducting yttrium-barium-copper-oxide rotating target and preparation method thereof | |
| CN106283052A (en) | A kind of two-dimensional material regulation and control silicon-carbon composite construction hydrogen resistance coating and preparation method thereof | |
| CN113355625A (en) | NbC-reinforced high-entropy alloy-based composite coating and preparation method thereof | |
| CN105463443B (en) | A kind of marine drilling platform corrosion resistant coating production | |
| CN107904565A (en) | The preparation method of Cu In Ga Se compound rotary target materials | |
| CN108118326A (en) | A kind of increasing material manufacturing method of 3.87m high purity coppers rotary target material | |
| CN114250444A (en) | Method for plasma-assisted chemical vapor deposition of high-purity tungsten sputtering target material | |
| CN108034925A (en) | CuSe2The preparation method of compound rotary target material | |
| CN106381474B (en) | The preparation method of stainless steel surface composite anti-wear coating | |
| CN107858656A (en) | The preparation method of CuSe compound rotary target materials | |
| CN105603374B (en) | One kind prepares Si on polysilicon ingot crucible3N4The method of film | |
| CN108034926A (en) | Cu2The preparation method of Se compound rotary target materials | |
| CN109267019A (en) | Silicon rotary target material and preparation method thereof | |
| CN104593714B (en) | The SiC bases rotary target material and its manufacture method of a kind of doping metals | |
| CN105063540B (en) | A method of preparing Ni-WC coatings in low-carbon steel piece surface | |
| CN105130466A (en) | Ceramic composite material for thermal spraying on metal surface and preparation and application method thereof | |
| CN114438435B (en) | Thermal barrier coating and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |