CN107895690A - A kind of preparation method of large area, high reflectance gallium nitride/nanoporous gallium nitride distribution Bragg reflector - Google Patents
A kind of preparation method of large area, high reflectance gallium nitride/nanoporous gallium nitride distribution Bragg reflector Download PDFInfo
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- CN107895690A CN107895690A CN201711277378.6A CN201711277378A CN107895690A CN 107895690 A CN107895690 A CN 107895690A CN 201711277378 A CN201711277378 A CN 201711277378A CN 107895690 A CN107895690 A CN 107895690A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/205—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
- H01L21/2056—Epitaxial deposition of AIIIBV compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0281—Coatings made of semiconductor materials
Abstract
The present invention relates to a kind of large area, the preparation method of high reflectance gallium nitride/nanoporous gallium nitride distribution Bragg reflector.This method includes using electrochemical etching method, using the UID GaN/n GaN periodic structures being grown in c surface sapphire substrates as anode, using Pt electrodes as negative electrode, in NaNO3, sodium chloride (NaCl) or sodium sulphate (Na2SO4) gallium nitride/nanoporous gallium nitride distribution Bragg reflector is prepared in neutral electrolyte.The mirror surface is smooth, can meet the product needs of 2 inches and the above, can be more than 95% in certain wave band reflectivity of visible region.For preparing the devices such as gallium nitride based vertical cavity surface emitting laser and light emitting diode.
Description
Technical field
The present invention relates to a kind of large area, high reflectance gallium nitride/nanoporous gallium nitride distribution Bragg reflector
Preparation method, belong to Semiconductor Optoeletronic Materials technical field.
Background technology
The research of gallium nitride (GaN) based vertical cavity surface emitting laser (VCSEL) and light emitting diode (LED) receives people
Increasingly extensive concern.One of the high efficiency, its essential condition for wanting to realize both devices is exactly high reflectance distribution cloth
The use of glug speculum (DBR).At present, the multicycle such as AlInN/GaN, AlN/GaN and AlGaN/GaN DBR is had attempted to
Structure, for example, CN101478115A discloses nitride distributed Bragg reflector, it is using outside organic metal chemistry gas phase
Prolong (MOCVD) technology and GaN cushions are grown in c- surface sapphire substrates, growth is by GaN layer and aluminium nitride on GaN cushions
The distribution Bragg reflector that layer is formed, indium, periodicity 35-40 are mixed in wherein AlN or/and GaN.First to c- surface sapphires
Substrate is heat-treated, then in H2GaN nucleating layers, heating growth GaN cushions are grown under atmosphere；Regrowth AlN is buffered, with
Heating recrystallizes AlN layers afterwards；Finally in N2Alternating growth AlN layers are repeated under atmosphere and GaN layer prepares DBR, wherein AlN layers
With one or both of GaN layer indium is mixed in growth.But due between two kinds of materials (such as：AlInN and GaN) exist compared with
Small refraction is poor, therefore the DBR transmitting bands prepared by above-mentioned material are narrow more with the periodicity required for the reflectivity for reaching certain.
GaN refractive index is 2.4, and the refractive index of air-gap is 1, if therefore GaN/ air-gap multicycles structure is made certainly will
Overcome disadvantages mentioned above.However, GaN/ air-gap dbr structures are difficult to be prepared by large area.In recent years, some research groups attempt to use
Nanoporous GaN (by the size of porosity refractive index can be made to be modulated between 1.0 to 2.4) substitutes air-gap.For
This dbr structure, existing method is to use electrochemical etching technology, to being mixed undoped with GaN (0001)/Si in oxalic acid solution
Miscellaneous n-GaN (0001) periodic structure carries out laterally etched.Because electrochemical etching depth only has tens microns, therefore use
Laterally etched technology is difficult to prepare large area dbr structure；Though oxalic acid used is weak acid but still unfriendly to environment.
The content of the invention
In view of the shortcomings of the prior art, the present invention provides a kind of GaN/ nanoporous GaN distribution Bragg reflectors and prepared
Method.The technical assignment of the present invention is to prepare large area, the GaN/ nanoporous GaN distribution Bragg reflectors of high reflectance.
Term is explained：
MOCVD：Metal Organic Chemical Vapor extension.
UID-GaN：Unintentional doped gallium nitride.
n-GaN：Si adulterates n-type gallium nitride.
NP-GaN：Nanoporous gallium nitride.
UID-GaN (0001)/n-GaN (0001) periodic structure：In c- surface sapphire substrates grow GaN nucleating layers and
After GaN cushions, UID-GaN (0001)/n-GaN (0001) periodic structure of growth.
Room temperature：With implication well known in the art, refer to 25 ± 5 DEG C.
Technical scheme is as follows：
The preparation method of a kind of gallium nitride/nanoporous gallium nitride distribution Bragg reflector, using electrochemical etching skill
Art, using neutral solution as electrolyte, to UID-GaN (0001)/n-GaN (0001) cycles being grown in c- surface sapphire substrates
Property structure carry out surface etch；The neutral solution is sodium nitrate (NaNO3), sodium chloride (NaCl) or sodium sulphate (Na2SO4)
The aqueous solution；The UID-GaN (0001)/n-GaN (0001) periodicity is 6-15.GaN/NP-GaN distributed Blatt reflectives are made
Reflectivity >=90% of mirror.
, according to the invention it is preferred to, the process conditions of the electrochemical etching are as follows：
A1：During electrochemical etching, with UID-GaN (the 0001)/n- being grown in c- surface sapphire substrates
GaN (0001) periodic structure is anode, and platinum (Pt) electrode is negative electrode；
A2：Concentration of electrolyte：0.1-1.0mol/L；Further preferred 0.1-0.6mol/L；
A3：Etch voltage：10-30V；
A4：Etching temperature：Room temperature.
, according to the invention it is preferred to, the electrochemical etching, by UID-GaN (0001)/n-GaN of every 2 μ m thick
(0001) periodic structure meter, etch period 15-65min.
, according to the invention it is preferred to, in the UID-GaN (0001)/n-GaN (0001) periodic structure, UID-GaN
(0001) thickness degree is 45-200nm；
, according to the invention it is preferred to, in the UID-GaN (0001)/n-GaN (0001) periodic structure, n-GaN
(0001) thickness degree is 55-200nm, and the Si doping concentrations of n-GaN layers are 3.0 × 1018~9.0 × 1019cm-3。
, according to the invention it is preferred to, the UID-GaN (0001)/n-GaN (0001) periodicity is 10-12.Preferably,
Prepared GaN/NP-GaN distribution Bragg reflectors reflectivity is more than 95%, and periodicity is less than 15；When periodicity is up to 15,
Reflectivity can be more than 99%.
, according to the invention it is preferred to, the GaN/NP-GaN distribution Bragg reflectors reflected light wavelength 380-760nm.
It can realize that GaN/NP-GaN is distributed by the size of the thickness and etching voltage that change UID-GaN (0001) and n-GaN (0001)
The regulation and control of Bragg reflection specular reflection wavelength.Realize 536-674nm feux rouges, 530-600nm gold-tinteds, 512-578nm green glows or
The reflection interference of 412-486nm blue lights is strengthened.Perceived color is obtained for the GaN/NP-GaN of red, yellow, green or blueness to divide
Cloth Bragg mirror product.
Gallium nitride prepared by the present invention/nanoporous gallium nitride distribution Bragg reflector area is big, can meet 2 inches and
Product above needs.
According to the present invention, a preferred embodiment is as follows：
(1) MOCVD technologies heteroepitaxial growth UID-GaN (0001)/n-GaN in c- surface sapphire substrates is used
(0001) periodic structure.
(2) by sodium nitrate (NaNO3), sodium chloride (NaCl) or sodium sulphate (Na2SO4) be dissolved in deionized water, configuration concentration
For 0.1-1.0mol/L electrolyte；It is preferred that 0.1-0.6mol/L；
(3) using Pt metal electrode as negative electrode, UID-GaN (0001)/n-GaN (0001) periodic structure is anode, is immersed
In the electrolyte configured；
(4) etching voltage is set, starts electrochemical etching, to UID-GaN (0001)/n-GaN (0001) periodic structure
Perform etching；After the completion of etching, etching apparatus is closed；
(5) UID-GaN (0001) after etching/n-GaN (0001) periodic structure is taken out from electrolyte, spend from
After sub- water immersion 10-15 minutes, dried up with nitrogen.
The reflected light wavelength 380-760nm of prepared GaN/NP-GaN distribution Bragg reflectors；Reflectivity >=90%,
Preferable reflectivity >=95%, most preferred reflectivity >=99%.The color of gained distribution Bragg reflector product reflected light
There are the colors such as red, yellow, green, blue；As shown in Figure 2.
The present invention prepares the application of GaN/NP-GaN distribution Bragg reflectors, for preparing GaN base vertical-cavity surface-emitting
The device such as laser (VCSEL) and GaN base light emitting (LED).
The electro chemical etching apparatus that the present invention prepares GaN/NP-GaN distribution Bragg reflectors uses prior art, mainly
Including parts such as computer, dc source, beaker, support, metal foil electrodes；As shown in Figure 1.
It is equal with reference to prior art for what is be particularly limited in the inventive method.
The excellent results of the present invention：
1. the present inventor surprisingly has found, using by NaNO3、、NaCl、Na2SO4Etc. neutral solution to UID-GaN
(0001)/n-GaN (0001) periodic structure carries out table (just) face electrochemical etching, can prepare large area (2 inches and more than),
The GaN/NP-GaN distribution Bragg reflectors of reflectivity >=90%.The positive etching of the periodic structure, is exactly to be tied from the cycle
Contact of the structure with electrolyte towards etching in periodic structure one by one.After etching terminates, layer of undoped gan does not find substantially to be carved
Erosion, and the GaN of Si doping porosity is then more than 50%.Therefore, in periodic structure after etching, layer of undoped gan is
Optically denser medium, and n-GaN layers are optically thinner medium.By optically thinner medium (refractive index n1) and optically denser medium (refractive index n2) respectively
It is λ/4n that thickness, which is made,1With λ/4n2, then wavelength is that λ light reflecting interference reinforcement occurs on periodic structure surface.
2. the thickness of the invention by changing u-GaN and n-GaN, can prepare has high reflectance to visible ray different-waveband
GaN/NP-GaN distribution Bragg reflectors.By the doping concentration and/or etching solution that change etching voltage, n-GaN layers
Concentration can realize the slight modulation of GaN/NP-GaN distribution Bragg reflector back wave wave bands.
3. present invention discover that divide Bragg mirror by the periodicity for changing periodic structure to change GaN/NP-GaN
Reflectivity.When periodicity reaches 15 pairs, reflectivity can be more than 99%.
4. GaN/NP-GaN distribution Bragg reflector of the reflectivity more than 95%, available for preparation GaN base vertical cavity surface
Emitting laser and GaN base light emitting.
5. present invention process condition is easy to accurately control, GaN/NP-GaN distribution Bragg reflectors uniformity and again is prepared
Renaturation is good, is easy to industrialization production.Prepared distribution Bragg reflector reflectivity is high, and stability is high, has a extensive future.
Brief description of the drawings
Fig. 1 is the electrochemical etching equipment schematic diagram that embodiment prepares GaN/NP-GaN distribution Bragg reflectors, wherein
1 is computer in figure, and 2 be dc source, and 3 be sample, and 4 be electrolyte, and 5 be platinum electrode.
Fig. 2 is the GaN/ with different reflection light colors prepared by embodiment 1, embodiment 2, embodiment 3 and embodiment 4
NP-GaN distribution Bragg reflector sample pictures, wherein, (a) reflected light is red, and (b) reflected light is yellow, (c) reflected light
For green, (d) reflected light is blueness.Ruler units are cm in figure：Centimetre.
Fig. 3 is that embodiment 1 prepares GaN/NP-GaN distribution Bragg reflectors section electron microscope (SEM) picture, its
Middle ruler units are μm：Micron.
Fig. 4 is that embodiment 1 prepares GaN/NP-GaN distribution Bragg reflector reflectivity experimental results, wherein, abscissa：
Wavelength (Wavelength), unit：Nanometer, ordinate：Reflectivity (Reflectance).
Embodiment
With reference to the accompanying drawings and examples, the present invention will be further described for comparative example, but not limited to this.In embodiment
To prepare 2 inches of conventional GaN/NP-GaN distribution Bragg reflectors.
Embodiment 1：The GaN/NP-GaN distribution Bragg reflectors that red-light reflecting interference is strengthened can be achieved
The UID-GaN/n-GaN periodic structures being grown in c- surface sapphire substrates are entered using electrochemical etching technology
Row electrochemical etching, etching solution used are NaNO3Neutral solution, step are as follows：
(1) using MOCVD technologies, heteroepitaxial growth has 12 cycles on c- surface sapphires (0001) substrate
UID-GaN (0001)/n-GaN (0001) periodic structure；N-GaN is Si doping, and UID-GaN thickness is 75nm, n-GaN thickness
It is 5 × 10 to spend for 100nm, n-GaN doping concentrations19cm-3。
(2) 0.5mol/L NaNO is configured with deionized water3Neutral solution；As electrolyte.
(3) etching apparatus is opened, and etching voltage is set as 20V；
(4) using platinum electrode as negative electrode, UID-GaN/n-GaN periodic structures are anode, and level pressure etches 60 minutes；
(5) after etching terminates, etching apparatus is closed；
(6) immersion of anode sample in deionized water after 10 minutes, is dried up with nitrogen.
The present embodiment 1 is in NaNO3The GaN/NP-GaN distribution Bragg reflectors prepared in solution can reflect red visible
Light, and surfacing is smooth, as shown in Fig. 2 (a).In 536-674nm visible light wave ranges reflectivity more than 95%, as shown in Figure 3.
The present embodiment 1 prepares GaN/NP-GaN distribution Bragg reflectors microstructure as shown in figure 4, Fig. 4 is shown, the cycle
Periodicity is 12 cycles in property structure.UID-GaN layers are optically denser medium in periodic structure, and nanoporous n-GaN layers are
Optically thinner medium.
Embodiment 2：The GaN/NP-GaN distribution Bragg reflectors that gold-tinted reflection interference is strengthened can be achieved
Preparation process is as described in Example 1.Except that：
Change the thickness of UID-GaN/n-GaN periodic structures：UID-GaN thickness is 50nm, and n-GaN thickness is
80nm；Change electrolyte NaNO3Neutral solution concentration is 0.3mol/L；Other conditions are constant.
Prepared GaN/NP-GaN distribution Bragg reflectors can reflect yellow visible light, and surfacing is smooth, such as
Shown in Fig. 2 (b).In 530-600nm visible light wave range internal reflection rates more than 95%.
Embodiment 3：The GaN/NP-GaN distribution Bragg reflectors that green-light reflecting interference is strengthened can be achieved
Preparation process is as described in Example 1.Except that：UID-GaN thickness is 50nm, and n-GaN thickness is 70nm；
Concentration of electrolyte is 0.1mol/L；Etching voltage is 25V.
Prepared GaN/NP-GaN distribution Bragg reflectors for can reflection green visible ray, and surfacing is smooth,
As shown in Fig. 2 (c).In 512-578nm visible light wave range internal reflection rates more than 95%.
Embodiment 4：The GaN/NP-GaN distribution Bragg reflectors that blue-light reflecting interference is strengthened can be achieved
Preparation process is as described in Example 1.Except that：UID-GaN thickness is 50nm, and n-GaN thickness is 65nm；
Etching voltage is reduced to 15V by 20V；Etch period is 30 minutes.
Prepared distribution Bragg reflector can reflection blue visible ray, and surfacing is smooth, as shown in Fig. 2 (d).
In 412-486nm visible light wave range reflectivity more than 95%.
Comparative example 1：Under 40V etching voltages, electrochemical etching method prepares GaN/NP-GaN distribution Bragg reflectors
Preparation method is same as Example 1, except that etching voltage increases to 40V by 20V.The GaN/NP- of preparation
Though GaN distribution Bragg reflectors still reflect feux rouges, there is obvious obscission in its surface, becomes uneven.
Comparative example 2：Under 8V etching voltages, electrochemical etching method prepares GaN/NP-GaN distribution Bragg reflectors
Preparation method is same as Example 1, except that etching voltage is reduced to 8V by 20V.The GaN/NP- of preparation
GaN distribution Bragg reflectors, though surfacing is smooth, and can reflect feux rouges, the reflectivity of visible ray is only up to 70%.
Comparative example 3：NaCl solution, electrochemical etching method prepare GaN/NP-GaN distribution Bragg reflectors
Preparation method is same as Example 1, except that etching solution is substituted by 0.5mol/L NaCl neutral solutions
0.5mol/L NaNO3Neutral solution, the doping concentration of n-GaN layers is by 5 × 1019cm-3It is reduced to 2 × 1018cm-3.Prepare
GaN/NP-GaN distribution Bragg reflectors, though surfacing is smooth, and can reflect feux rouges, the reflectivity of visible ray is less than
70%.
Claims (10)
1. a kind of preparation method of gallium nitride/nanoporous gallium nitride distribution Bragg reflector, using electrochemical etching technology,
Using neutral solution as electrolyte, to UID-GaN (0001)/n-GaN (0001) periodicity being grown in c- surface sapphire substrates
Structure carries out surface etch；The neutral solution is sodium nitrate (NaNO3), sodium chloride (NaCl) or sodium sulphate (Na2SO4) water
Solution；The UID-GaN (0001)/n-GaN (0001) periodicity is 6-15.
2. the preparation method of gallium nitride as claimed in claim 1/nanoporous gallium nitride distribution Bragg reflector, its feature
It is that the process conditions of the electrochemical etching are as follows：
A1：During electrochemical etching, with UID-GaN (the 0001)/n-GaN being grown in c- surface sapphire substrates
(0001) periodic structure is anode, and platinum (Pt) electrode is negative electrode；
A2：Concentration of electrolyte：0.1-1.0mol/L；
A3：Etch voltage：10-30V；
A4：Etching temperature：Room temperature.
3. the preparation method of gallium nitride as claimed in claim 1/nanoporous gallium nitride distribution Bragg reflector, its feature
It is, the electrochemical etching, based on UID-GaN (0001)/n-GaN (0001) periodic structure of every 2 μ m thick, during etching
Between be 15-65min.
4. the preparation method of gallium nitride as claimed in claim 1/nanoporous gallium nitride distribution Bragg reflector, its feature
It is, in the UID-GaN (0001)/n-GaN (0001) periodic structure, UID-GaN (0001) thickness degree is 45-200nm.
5. the preparation method of gallium nitride as claimed in claim 1/nanoporous gallium nitride distribution Bragg reflector, its feature
It is, in the UID-GaN (0001)/n-GaN (0001) periodic structure, n-GaN (0001) thickness degree is 55-200nm, n-
The Si doping concentrations of GaN layer are 3.0 × 1018~9.0 × 1019cm-3。
6. the preparation method of gallium nitride as claimed in claim 1/nanoporous gallium nitride distribution Bragg reflector, its feature
It is, the UID-GaN (0001)/n-GaN (0001) periodicity is 10-12.
7. the preparation method of gallium nitride as claimed in claim 1/nanoporous gallium nitride distribution Bragg reflector, its feature
It is, the GaN/NP-GaN distribution Bragg reflectors reflectivity is more than 90%, it is preferred that more than 95%.
8. the preparation method of gallium nitride as claimed in claim 1/nanoporous gallium nitride distribution Bragg reflector, its feature
It is, the GaN/NP-GaN distribution Bragg reflectors reflected light wavelength 380-760nm.
9. the preparation method of gallium nitride as claimed in claim 1/nanoporous gallium nitride distribution Bragg reflector, its feature
It is that step is as follows：
(1) using MOCVD technologies, heteroepitaxial growth UID-GaN (0001)/n-GaN (0001) is all in c- surface sapphire substrates
Phase property structure；
(2) by sodium nitrate (NaNO3), sodium chloride (NaCl) or sodium sulphate (Na2SO4) be dissolved in deionized water, configuration concentration is
0.1-1.0mol/L electrolyte；It is preferred that 0.1-0.6mol/L；
(3) using Pt metal line as negative electrode, UID-GaN (0001)/n-GaN (0001) periodic structure is anode, and immersion configures
Electrolyte in；
(4) etching voltage is set, starts electrochemical etching, UID-GaN (0001)/n-GaN (0001) periodic structure is carried out
Etching；After the completion of etching, etching apparatus is closed；
(5) UID-GaN (0001) after etching/n-GaN (0001) periodic structure is taken out from electrolyte, uses deionized water
After soaking 10-15 minutes, dried up with nitrogen.
10. the application of GaN/ nanoporous GaN distribution Bragg reflectors prepared by any one of claim 1-9, for preparing
Gallium nitride (GaN) based vertical cavity surface emitting laser (VCSEL) and light emitting diode (LED).
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108520911A (en) * | 2018-04-11 | 2018-09-11 | 山东大学 | A kind of preparation method of the InGaN base blue LEDs with nanoporous GaN distribution Bragg reflectors |
| CN109830583A (en) * | 2019-01-31 | 2019-05-31 | 西安工程大学 | A kind of preparation method of the blue light-emitting diode with GaN/ lar nanometric cavities |
| CN109950792A (en) * | 2019-03-29 | 2019-06-28 | 钟祥博谦信息科技有限公司 | The distributed bragg reflector mirror of gallium nitride and the preparation method of resonant cavity |
| CN110061109A (en) * | 2019-04-26 | 2019-07-26 | 山东大学 | A kind of porous GaN conduction DBR and preparation method thereof |
| CN110067022A (en) * | 2019-03-20 | 2019-07-30 | 华南师范大学 | A kind of monocrystalline GaN nano wire and preparation method thereof |
| CN110299435A (en) * | 2019-06-20 | 2019-10-01 | 西安工程大学 | A kind of preparation method of the InP film with distribution Bragg reflector |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102782818A (en) * | 2010-01-27 | 2012-11-14 | 耶鲁大学 | Conductivity based selective etch for gan devices and applications thereof |
| CN104253184A (en) * | 2014-09-24 | 2014-12-31 | 山西飞虹微纳米光电科技有限公司 | Blue light LED (Light Emitting Diode) epitaxial structure with gradually-changed DBR (Distributed Bragg Reflector) layer |
| US20150044796A1 (en) * | 2013-08-08 | 2015-02-12 | International Business Machines Corporation | Thin light emitting diode and fabrication method |
| CN106848016A (en) * | 2017-04-06 | 2017-06-13 | 中国科学院半导体研究所 | The preparation method of the porous DBR of GaN base |
-
2017
- 2017-12-06 CN CN201711277378.6A patent/CN107895690A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102782818A (en) * | 2010-01-27 | 2012-11-14 | 耶鲁大学 | Conductivity based selective etch for gan devices and applications thereof |
| US20150044796A1 (en) * | 2013-08-08 | 2015-02-12 | International Business Machines Corporation | Thin light emitting diode and fabrication method |
| CN104253184A (en) * | 2014-09-24 | 2014-12-31 | 山西飞虹微纳米光电科技有限公司 | Blue light LED (Light Emitting Diode) epitaxial structure with gradually-changed DBR (Distributed Bragg Reflector) layer |
| CN106848016A (en) * | 2017-04-06 | 2017-06-13 | 中国科学院半导体研究所 | The preparation method of the porous DBR of GaN base |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108520911A (en) * | 2018-04-11 | 2018-09-11 | 山东大学 | A kind of preparation method of the InGaN base blue LEDs with nanoporous GaN distribution Bragg reflectors |
| CN109830583A (en) * | 2019-01-31 | 2019-05-31 | 西安工程大学 | A kind of preparation method of the blue light-emitting diode with GaN/ lar nanometric cavities |
| CN110067022A (en) * | 2019-03-20 | 2019-07-30 | 华南师范大学 | A kind of monocrystalline GaN nano wire and preparation method thereof |
| CN109950792A (en) * | 2019-03-29 | 2019-06-28 | 钟祥博谦信息科技有限公司 | The distributed bragg reflector mirror of gallium nitride and the preparation method of resonant cavity |
| CN110061109A (en) * | 2019-04-26 | 2019-07-26 | 山东大学 | A kind of porous GaN conduction DBR and preparation method thereof |
| CN110061109B (en) * | 2019-04-26 | 2020-10-30 | 山东大学 | Porous GaN conductive DBR and preparation method thereof |
| CN110299435A (en) * | 2019-06-20 | 2019-10-01 | 西安工程大学 | A kind of preparation method of the InP film with distribution Bragg reflector |
| CN110299435B (en) * | 2019-06-20 | 2021-04-23 | 西安工程大学 | Preparation method of InP film with distributed Bragg reflector |
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