CN107894357A - A kind of sample thining method of automation - Google Patents
A kind of sample thining method of automation Download PDFInfo
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- CN107894357A CN107894357A CN201711093467.5A CN201711093467A CN107894357A CN 107894357 A CN107894357 A CN 107894357A CN 201711093467 A CN201711093467 A CN 201711093467A CN 107894357 A CN107894357 A CN 107894357A
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- sample
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
- G01N2001/2873—Cutting or cleaving
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- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Sampling And Sample Adjustment (AREA)
Abstract
The present invention relates to the sample thining method of technical field of semiconductors, more particularly to a kind of automation；Including：Step S1, there is provided there is an initial sample of a defect；Step S2, on the surface that initial sample avoids defect, two parallel extended lines using the both sides of the edge of defect is formed as start line, two grooves that groove width extends to both sides；Step S3, filling and the different metal of initial sample in two grooves；Step S4, the both sides of the sample after filling metal are thinned using focused ion beam technique, and the particle components of the return in thinning process is monitored during being thinned in real time；Step S5, when the accounting of the composition of different metal is less than a preset value in the particle components monitored, stop thinning operation；The position that can accurately control focused ion to cut, section precision is improved, while automaticity is high, efficiency is higher, and cost of labor is low, and sample preparation success rate is high.
Description
Technical field
The present invention relates to the sample thining method of technical field of semiconductors, more particularly to a kind of automation.
Background technology
Improved with integrated circuit integrated level, the size of transistor is less and less in chip, and CD minimum dimensions are not yet
Disconnected to reduce, device steps up to the sensitivity one of tiny flaw, and failure analysis means are facing to heavy challenge.
The use of focused ion beam defect inspection machine section is a conventional meanses of failure analysis, in sample making course, meets
To the less defect of size, how to guarantee to switch to a great problem that nucleus is this area.Needed in existing technology
Manually cut into slices while observing the position cut, slice position is very inaccurate, while automaticity is not high, and cost of labor is very
Height, it is less efficient.And be not easy defect being switched to center, sample preparation failure probability is higher.
The content of the invention
In view of the above-mentioned problems, the present invention proposes a kind of sample thining method of automation, divide applied to a failure is prepared
Analyse sample；Wherein, including：
Step S1, there is provided there is an initial sample of a defect；
Step S2, avoid on the surface of the defect, formed with the both sides of the edge of the defect in the initial sample
Two parallel extended lines are start line, two grooves that groove width extends to both sides；
Step S3, filling and the different metal of the initial sample in two grooves；
Step S4, the both sides of the sample after filling the metal are thinned using focused ion beam technique, and subtracted
The particle components of the return in thinning process are monitored in thin process in real time；
Step S5, the accounting of the composition of the different metal is less than a preset value in the particle components monitored
When, stop thinning operation.
Above-mentioned sample thining method, wherein, the defect includes a defect core and the edge thing around the defect core
Matter；
In the step S2, using two parallel extended lines of the both sides of the edge of the defect core of the defect as starting
Line.
Above-mentioned sample thining method, wherein, in the step S4, using the focused ion beam technique to described in filling
The both sides of sample after metal are thinned respectively, and the particle of the return in thinning process is monitored during being thinned in real time
Composition；
In the step S5, in the composition for monitoring the metal different in the particle components of either side in both sides
Accounting when being less than the preset value, stop the thinning operation of corresponding side.
Above-mentioned sample thining method, wherein, the different metal is tungsten metal.
Above-mentioned sample thining method, wherein, the preset value is 0.
Above-mentioned sample thining method, wherein, the groove is vertical-type groove.
Above-mentioned sample thining method, wherein, in the step S5, using the simple analyzer monitor the particle into
The composition of the different metal in point.
Beneficial effect：A kind of sample thining method of automation proposed by the present invention accurately can control focused ion to cut
Position, improve section precision, while automaticity is high, efficiency is higher, and cost of labor is low, and sample preparation success rate is high.
Brief description of the drawings
Fig. 1 is the step flow chart of the sample thining method automated in one embodiment of the invention；
Fig. 2 is the schematic top plan view for the sample that the sample thining method automated in one embodiment of the invention is formed；
Fig. 3 is the perspective view for the system for realizing that the sample of automation is thinned in one embodiment of the invention.
Embodiment
The present invention is further described with reference to the accompanying drawings and examples.
In a preferred embodiment, as depicted in figs. 1 and 2, it is proposed that a kind of sample thining method of automation, should
For preparing a failure analysis sample；Wherein it is possible to including：
Step S1, there is provided there is an initial sample 1 of a defect 10；
Step S2, avoid on the surface of defect 10, formed parallel with two of the both sides of the edge of defect 10 in initial sample 1
Extended line be start line, two grooves that groove width extends to both sides；
Step S3, filling and the different metal MT of initial sample in two grooves；
Step S4, the both sides of the sample after filling metal MT are thinned using focused ion beam technique, and be thinned
During in real time monitoring thinning process in return particle components；
Step S5, when the accounting of different metal MT composition is less than a preset value in the particle components monitored, stop
Only thinning operation.
In above-mentioned technical proposal, because defect is to prepare the key of failure analysis sample, defect can be clearly observed, very
Can big degree intactly retain defect dependent on when preparing failure analysis sample, and the other structures on sample beyond defect
It can be considered as with region non-effective, the processing technologys such as etching and the filling of groove can be carried out；Groove prepared by the present invention
In be filled with the metal MT heterogeneous with initial sample 1, in order to be thinned sample during can pass through the grain of trace back
Subconstiuent judges thinned position, so as to realize the automation for preparing failure analysis sample；Groove is towards defect 10 in the present invention
Center line border it is conllinear with the side margins of defect, the sidepiece of defect is just when being run out of with the metal MT ensured in groove
Exposure, the original position cut in this case should be in the position that heterogeneous metal MT be present；But this is a kind of situation, also
The groove of regular or irregular shape can be prepared so that heterogeneous metal MT content is in gradually in the particle components of return
Become；Be thinned stop after being formed be thinned after sample can be used as failure analysis sample.
In a preferred embodiment, defect includes a defect core 11 and the skirt material 12 around defect core 11；
In step S2, using two parallel extended lines of the both sides of the edge of core 11 the defects of defect 10 as start line.
In above-mentioned technical proposal, it is general the defects of 10 include defect core 11 and skirt material 12, the key of failure analysis
For defect core 11, it is therefore desirable to which skirt material 12 is also removed.
In a preferred embodiment, in step S4, using focused ion beam technique to the sample after filling metal MT
Both sides be thinned respectively, and be thinned during in real time monitoring thinning process in return particle components；
In step S5, it is less than in the accounting for the composition for monitoring metal MT different in the particle components of either side in both sides
During preset value, stop the thinning operation of corresponding side.
In above-mentioned technical proposals, sample both sides are thinned and carries out or carries out successively simultaneously,
But side where the monitoring to particle components should be distinguished, to ensure that sample both sides can be switched to the edge of defect 10.
In a preferred embodiment, different metal MT is tungsten metal, can easily use the side of mass spectral analysis
Method is monitored.
In a preferred embodiment, preset value 0, but this is a kind of preferable situation or others
Value.
In a preferred embodiment, groove is vertical-type groove, with ensure heterogeneous metal MT when ruing out of it is fast
Speed decay.
In a preferred embodiment, in step S5, metal different in particle components is monitored using simple analyzer
Composition.
In above-mentioned technical proposal, system as shown in Figure 3 can be used to realize the sample thining method in the present invention, this is
System can include：
Focused ion beam section unit 20, for subtracting to the both sides of the sample with the groove filled with metal MT
It is thin；
Mass spectrometry unit 30, particle components caused by sample are thinned for monitoring focused ion beam section unit 20,
The compositional data of the accounting of generation reflection metal MT composition and output；
Control unit 40, it is connected respectively with mass spectrometry unit 30 and focused ion beam section unit 20, for receiving simultaneously
The operation of focused ion beam section unit 20 is controlled according to compositional data.
By explanation and accompanying drawing, the exemplary embodiments of the specific structure of embodiment are given, it is smart based on the present invention
God, it can also make other conversions.Although foregoing invention proposes existing preferred embodiment, however, these contents are not intended as
Limitation.
For a person skilled in the art, after reading described above, various changes and modifications undoubtedly will be evident.
Therefore, appended claims should regard whole variations and modifications of the true intention and scope that cover the present invention as.Weighing
Any and all scope and content of equal value, are all considered as still belonging to the intent and scope of the invention in the range of sharp claim.
Claims (7)
- A kind of 1. sample thining method of automation, applied to one failure analysis sample of preparation；It is characterised in that it includes：Step S1, there is provided there is an initial sample of a defect；Step S2, avoid on the surface of the defect, formed with two of the both sides of the edge of the defect in the initial sample Parallel extended line is start line, two grooves that groove width extends to both sides；Step S3, filling and the different metal of the initial sample in two grooves；Step S4, the both sides of the sample after filling the metal are thinned using focused ion beam technique, and be thinned During in real time monitoring thinning process in return particle components；Step S5, when the accounting of the composition of the different metal is less than a preset value in the particle components monitored, Stop thinning operation.
- 2. sample thining method according to claim 1, it is characterised in that the defect includes a defect core and around institute State the skirt material of defect core；In the step S2, using two parallel extended lines of the both sides of the edge of the defect core of the defect as start line.
- 3. sample thining method according to claim 1, it is characterised in that in the step S4, using it is described focus on from The both sides of sample after filling the metal are thinned beamlet technique respectively, and monitoring is thinned in real time during being thinned During return particle components；In the step S5, in accounting for for the composition for monitoring the metal different in the particle components of either side in both sides During than less than the preset value, stop the thinning operation of corresponding side.
- 4. sample thining method according to claim 1, it is characterised in that the different metal is tungsten metal.
- 5. sample thining method according to claim 1, it is characterised in that the preset value is 0.
- 6. sample thining method according to claim 1, it is characterised in that the groove is vertical-type groove.
- 7. system is thinned in sample according to claim 1, it is characterised in that in the step S5, using described simple point Analyzer monitors the composition of the metal different in the particle components.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711093467.5A CN107894357B (en) | 2017-11-08 | 2017-11-08 | Automatic sample thinning method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711093467.5A CN107894357B (en) | 2017-11-08 | 2017-11-08 | Automatic sample thinning method |
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| CN107894357A true CN107894357A (en) | 2018-04-10 |
| CN107894357B CN107894357B (en) | 2021-03-05 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201711093467.5A Active CN107894357B (en) | 2017-11-08 | 2017-11-08 | Automatic sample thinning method |
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN88206944U (en) * | 1988-06-17 | 1988-12-28 | 中国科学院半导体研究所 | Ion bombardment device for paraparing samples |
| CN101769876A (en) * | 2008-12-29 | 2010-07-07 | 中芯国际集成电路制造(上海)有限公司 | Method for carrying out failure analysis in semiconductor device |
| CN101975818A (en) * | 2010-04-29 | 2011-02-16 | 中国计量科学研究院 | Detection system and method of characteristic substance |
| CN102062710A (en) * | 2009-11-17 | 2011-05-18 | 中芯国际集成电路制造(上海)有限公司 | Preparation method of observation sample for transmission electron microscope |
| CN102394209A (en) * | 2008-10-31 | 2012-03-28 | Fei公司 | Measurement and endpointing of sample thickness |
| CN102410947A (en) * | 2010-09-19 | 2012-04-11 | 中芯国际集成电路制造(上海)有限公司 | Preparation method of TEM (Transmission Electron Microscopy) sample |
| CN102825541A (en) * | 2012-09-10 | 2012-12-19 | 豪威科技(上海)有限公司 | Wafer thinning method |
| JP2014022296A (en) * | 2012-07-23 | 2014-02-03 | Hitachi High-Technologies Corp | Charge particle beam device and sample preparation method |
-
2017
- 2017-11-08 CN CN201711093467.5A patent/CN107894357B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN88206944U (en) * | 1988-06-17 | 1988-12-28 | 中国科学院半导体研究所 | Ion bombardment device for paraparing samples |
| CN102394209A (en) * | 2008-10-31 | 2012-03-28 | Fei公司 | Measurement and endpointing of sample thickness |
| CN101769876A (en) * | 2008-12-29 | 2010-07-07 | 中芯国际集成电路制造(上海)有限公司 | Method for carrying out failure analysis in semiconductor device |
| CN102062710A (en) * | 2009-11-17 | 2011-05-18 | 中芯国际集成电路制造(上海)有限公司 | Preparation method of observation sample for transmission electron microscope |
| CN101975818A (en) * | 2010-04-29 | 2011-02-16 | 中国计量科学研究院 | Detection system and method of characteristic substance |
| CN102410947A (en) * | 2010-09-19 | 2012-04-11 | 中芯国际集成电路制造(上海)有限公司 | Preparation method of TEM (Transmission Electron Microscopy) sample |
| JP2014022296A (en) * | 2012-07-23 | 2014-02-03 | Hitachi High-Technologies Corp | Charge particle beam device and sample preparation method |
| CN102825541A (en) * | 2012-09-10 | 2012-12-19 | 豪威科技(上海)有限公司 | Wafer thinning method |
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| CN107894357B (en) | 2021-03-05 |
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