CN107892297B - Diamond treatment method and modified diamond - Google Patents
Diamond treatment method and modified diamond Download PDFInfo
- Publication number
- CN107892297B CN107892297B CN201711065835.5A CN201711065835A CN107892297B CN 107892297 B CN107892297 B CN 107892297B CN 201711065835 A CN201711065835 A CN 201711065835A CN 107892297 B CN107892297 B CN 107892297B
- Authority
- CN
- China
- Prior art keywords
- diamond
- processing according
- protective layer
- radiation
- group
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The invention provides a diamond treatment method and a modified diamond. The diamond processing method comprises placing the diamond in space radiation environment with a ground clearance of at least 20Km to receive the radiation of space rays. The modified diamond is processed by the processing method provided by the invention. The invention can improve the problem of the distribution uniformity of the modified diamond defects/color centers.
Description
Technical Field
The invention relates to the technical field of superhard materials, in particular to a diamond treatment method and a modified diamond.
Background
The diamond has the outstanding performance advantages of high hardness, high thermal conductivity, high volume modulus, extremely low compressibility, extremely low thermal expansion coefficient, high sound conduction rate, good insulating property, extremely wide forbidden width, good chemical inertness and biocompatibility, negative electron affinity and the like, and is one of the most potential novel functional materials at present.
The diamond has special color and performance due to defects such as doping, color centers, dislocation and the like in the diamond, for example, the NV color center is used as the basis of quantum computation; defects, dislocations, within the diamond also give the diamond some excellent properties, such as toughness. Therefore, according to the actual use requirement, obtaining the diamond with the required defects has important significance for popularization and application of the diamond.
The existing research results find that the diamond displays yellow and blue colors when the diamond is doped with nitrogen and boron, the N-V color center inside the diamond is the main reason for enabling the diamond to display pink colors, and defects and dislocations inside the diamond are important factors for enabling the diamond to display colors. At present, methods for causing dislocation, color center and defect to appear in diamond mainly comprise particle radiation, doping and high-temperature high-pressure treatment. In the prior art, protons have high quality, can cause great influence on diamond, and form defects to cause the diamond to display green. However, the volume of the proton is large, the interaction force with the crystal lattice of the diamond is strong, and the penetration ability of the proton is weak, so that the caused defects and color centers are mainly concentrated at the very shallow position of the surface of the diamond, the color distribution of the diamond is not uniform due to the non-uniform distribution of the defects, and an umbrella-shaped structure is formed, which affects the uniformity of the material and the appearance, so that the method for modifying the diamond by the proton is severely limited.
Disclosure of Invention
In view of the above, the main objective of the present invention is to provide a method for processing diamond and a modified diamond, which can improve the problem of uniformity of defect/color center distribution of the modified diamond.
In order to achieve the purpose, the technical scheme of the invention is realized as follows:
in one aspect of the invention, there is provided a method of treating diamond, the method comprising exposing the diamond to a space radiation environment having a height of at least 20Km above ground to receive radiation from space radiation.
Preferably, the method further comprises: emitting the diamond from the ground into the space radiation environment or synthesizing the diamond in the space radiation environment.
Preferably, the method comprises protecting the diamond against and/or reducing the corrosion of atomic oxygen before the diamond receives radiation from space radiation.
Preferably, the protection applied to the diamond is to form at least one protection layer on the surface of the diamond or to place the diamond in a closed container.
Preferably, the protective layer has a thickness of 100 μm or less. Further, the protective layer has a thickness of 50 micrometers or less, further 10 micrometers or less, further 5 micrometers or less, further 1 micrometer or less, further 500 nanometers or less and not less than 1 nanometer. The protective layer has a thickness too high to block external rays from entering the inside of the diamond.
The thickness of the protective layer is set according to the concentration of atomic oxygen in the environment, and is not particularly limited. Without being bound by any theory, the protective layer does not influence or influences as little as possible the radiation of the space rays. Thus, the protective layer is as thin as possible, sufficient to protect the diamond from atomic oxygen attack. The protective layer has a thickness of, for example, above 1 nm, or above 5 nm, 10 nm or 20 nm, or even above 50 nm.
The protective layer can be a single type of material or a composite material; further, the protective layer may be one or more layers.
Preferably, the protective layer is formed of one or more materials selected from the group consisting of a polymer material, a metal, and an inorganic non-metal material.
Preferably, the polymer material is at least one selected from the group consisting of polyetherketones, polyesters, polyethers, polyimides, polyamides, polyphenylene sulfides, poly (meth) acrylates, and polyolefins.
Preferably, the inorganic nonmetallic material is an inorganic oxide, preferably formed of at least one material selected from the group consisting of silicon dioxide, titanium dioxide, and zirconium dioxide.
Preferably, the metal material is formed of at least one material selected from the group consisting of magnesium and aluminum.
Any suitable method may be used to apply the protective layer. For example, the protective layer is formed on the surface of the diamond by any one of coating, vapor deposition, magnetron sputtering, and evaporation, but is not limited thereto.
In another aspect of the invention, there is provided a modified diamond processed by the above method.
The invention provides a method for processing diamond and a modified diamond obtained by the method, which is to place the diamond in a space radiation environment with the ground clearance of at least 20Km to receive the radiation of space rays, thereby obtaining the diamond with uniform defect/color center distribution. The radiation in the space mainly comes from the Galaxy cosmic rays, the solar cosmic rays and the earth radiation zone, the radiation is various and comprises protons, electrons, neutrons, gamma rays and heavy ions, and the radiation has wide energy distribution, so that the penetration capacity of the radiation is different, and the defects/color centers of different depths are generated on the diamond by utilizing the difference of the penetration capacity of the radiation, so that the internal defects/color centers of the processed diamond are distributed more uniformly, and the condition that the defects/color centers are not uniformly distributed due to the fact that the radiation with single type and single energy distribution processes the diamond can be overcome.
Drawings
FIG. 1 is a schematic illustration of the present invention providing a protective layer for diamond application;
fig. 2 is a schematic diagram of the diamond protection in a closed container according to the present invention.
Detailed Description
The invention provides a method for processing diamond, which comprises the step of placing the diamond in a space radiation environment with the height from the ground of at least 20Km so as to receive the radiation of space rays. The radiation in the space mainly comes from the Galaxy cosmic rays, the solar cosmic rays and the earth radiation zone, the radiation is various and comprises protons, electrons, neutrons, gamma rays and heavy ions, and the radiation has wide energy distribution, so that the penetration capacity of the radiation is different, and the defects/color centers of different depths are generated on the diamond by utilizing the difference of the penetration capacity of the radiation, so that the internal defects/color centers of the processed diamond are distributed more uniformly, and the condition that the defects/color centers are not uniformly distributed due to the fact that the radiation with single type and single energy distribution processes the diamond can be overcome.
The diamond of the invention comprises diamond, natural mining or synthetic diamond and processed diamond. The treated diamond includes diamond that has been preliminarily irradiated with a radiation source, such as low energy proton radiation treatment using a single energy profile. In the embodiment of the invention, the diamond can be emitted from the ground to a space radiation environment and can also be synthesized in the space radiation environment.
Protection is also applied to the diamond before it receives the radiation of the space rays. The protection method applied requires that the corrosion of atomic oxygen is prevented and/or reduced and external rays are not blocked from entering the interior of the diamond, specifically, the diamond can be placed in an environment without atomic oxygen or with less atomic oxygen, and further, at least one protection layer can be formed on the surface of the diamond or the diamond can be placed in a closed container. The low atomic oxygen environment is a relative value which means in the diamond tableAfter the surface is applied with the protective layer or the diamond is placed in the closed container, due to the blocking effect of the protective layer and/or the closed container, the atomic oxygen quantity in the environment contacted with the surface of the diamond is less than the atomic oxygen quantity contacted with the surface of the diamond when no protection is applied to the surface of the diamond, and the environment of the diamond is the low atomic oxygen environment. For example, at an atomic oxygen concentration of 1X 1019Per cm3In an environment in which a protective layer is applied to the surface of the diamond or the diamond is placed in a closed container, there may still be some atomic oxygen that passes through the protective layer or the closed container, but the atomic oxygen concentration in the environment in which the surface of the diamond is exposed is much lower than 1X 1019Per cm3And thus the environment in which the diamond is located is a low atomic oxygen environment relative to the surrounding environment. Preferably, the atomic oxygen etch experienced by the diamond after the protection is applied is reduced by more than 20%, more preferably more than 50%, more preferably more than 90%, most preferably no atomic oxygen is present in the environment, by weight relative to the etch experienced when no protection is applied.
Fig. 1 is a schematic diagram of applying a protective layer 1 on the outer surface of a diamond 2, wherein the protective layer has a thickness of 100 μm or less. Further, the protective layer has a thickness of 50 micrometers or less, further 10 micrometers or less, further 5 micrometers or less, further 1 micrometer or less, further 500 nanometers or less and not less than 1 nanometer. The thickness of the protective layer may not be too high, which would block external radiation from entering the interior of the diamond. The protective layer is made of any material and any shape which can play a role in blocking atomic oxygen, can be made of one or more of high polymer materials, metals and inorganic non-metal materials, can be made of a single material or a composite material, and can be made of one layer or multiple layers. The polymer material is preferably formed by at least one polymer material in the group consisting of polyether ketone, polyester, polyether, polyimide, polyamide, polyphenylene sulfide, poly (methyl) acrylate and polyolefin; the inorganic non-metallic material is preferably an inorganic oxide, preferably formed from at least one material selected from the group consisting of silicon dioxide, titanium dioxide and zirconium dioxide; the metal material is preferably a material having a small influence on radiation, and is preferably magnesium, aluminum, or the like. The protective layer is formed on the surface of the diamond by coating, vapor deposition, magnetron sputtering, evaporation and other methods.
Fig. 2 is a schematic view of diamond being placed in a closed container for protection, wherein the closed container can be in various shapes, for example, a closed container with any suitable shape, such as a cubic hollow box, a hollow sphere, a hemispherical cover, and the like. The closed container used requires a device capable of partially or totally excluding atomic oxygen, preferably with no or substantially no or little barrier to external radiation. The material of the closed container is not limited, and any material having a barrier effect against all or part of atomic oxygen can be used to form the container or a part of the container, and a material having no or substantially no or less barrier effect against external rays is preferable. Specific examples include polyimide, polysulfone, polystyrene, polybenzimidazole, silica, alumina, etc., but are not limited thereto.
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
Method and apparatus
The following examples were tested in a manner simulating a space environment. The energy distribution of electrons and protons is controlled by linear accelerator. Specifically, the energy of the control electrons is 0.1MeV, 1MeV, 5MeV, 7MeV, 9MeV, and 15MeV, respectively, and the energy of the control protons is 0.1MeV, 1MeV, 5MeV, 7MeV, and 10MeV, respectively. The fluxes of the control electrons and the protons are basically and uniformly distributed at the eleven different energy points, the total fluxes of the protons and the quanta are determined according to different experimental needs, and the processing time of the sample at the different energy points can be calculated according to the total flux at the energy points and the condition of equipment, which belongs to the conventional technical means of a person skilled in the art, so the calculation process of the processing time in all the embodiments is not repeated. After a diamond sample to be treated is placed in a treatment space for treatment, the obtained sample is placed under an optical microscope to observe the color appearance, and is placed under a scanning electron microscope (Hitachi S-3000H SEM) to observe the surface appearance.
Sample (I)
Type IIa diamond was synthesized.
Example one
Taking IIa type diamond, controlling energy size and distribution of electrons and protons according to the above method to make final total flux of protons and electrons be 1X 1014Per cm2. The processed diamond is placed under an optical microscope for observation, and a sample shows light green without an obvious umbrella-shaped structure; the sample is observed under a scanning electron microscope (Hitachi S-3000H SEM) and the surface of the sample is smooth.
Example two
Taking IIa type diamond, controlling energy distribution of electrons and protons, and controlling energy size and distribution of electrons according to the above method to make final total flux of protons and electrons be 1 × 1015Per cm2. The treated diamond is placed under an optical microscope for observation, and a sample shows green without an obvious umbrella-shaped structure; the sample is observed under a scanning electron microscope (Hitachi S-3000H SEM) and the surface of the sample is smooth.
EXAMPLE III
Taking IIa type diamond, depositing 3 micron thick silicon dioxide film on its surface, controlling the energy and distribution of electron and proton according to the above method, making the final total flux of proton and electron be 1X 1016Per cm2. In order to simulate the atomic oxygen environment of outer space, the diamond with the deposited silicon dioxide film is placed in the atomic oxygen environment, wherein the accumulative atomic oxygen injection amount in the treatment process is 5 multiplied by 1020Atom/cm3. The sample is then placed in a solvent and the protective layer is peeled off under sonication. The treated diamond is placed under an optical microscope for observation, and a sample shows green without an obvious umbrella-shaped structure; the sample is observed under a scanning electron microscope (Hitachi S-3000H SEM), and the surface of the sample is relatively smooth.
Example four
Taking a synthetic IIa type diamond, coating polyimide on the surface of the synthetic IIa type diamondAmine solution, dry to cure, dry film thickness of 5 microns. The energy size and distribution of electrons and protons are controlled according to the above method to make the total flux of final protons and electrons 1 × 1016Per cm2. To simulate the atomic oxygen environment of space, polyimide coated diamond was placed in an atomic oxygen environment with a cumulative atomic oxygen implant of 5X 10 during the treatment20Atom/cm3. And then placing the sample in a solvent, and stripping the protective layer under ultrasonic treatment. Observing the treated diamond under an optical microscope, wherein the sample shows green and has no obvious umbrella-shaped structure; the sample is observed under a scanning electron microscope (Hitachi S-3000H SEM), and the surface of the sample is relatively smooth.
EXAMPLE five
Taking type IIa diamond, controlling energy size and distribution of electrons and protons according to the above method to make final total flux of protons and electrons be 1 × 1016Per cm2. To simulate the atomic oxygen environment in space, the diamond samples were placed in an atomic oxygen environment with a cumulative atomic oxygen injection of 5X 10 during the treatment20Per cm3. The treated diamond is placed under an optical microscope for observation, and a sample shows green without an obvious umbrella-shaped structure; the sample is placed under a scanning electron microscope (Hitachi S-3000H SEM) for observation, and the surface of the sample is uneven.
The processing conditions of the above examples one to five and the surface morphology of the obtained processed diamond are shown in table 1 below.
The above description is only an embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of changes or substitutions within the technical scope of the present invention, and all such changes or substitutions are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (10)
1. A method for processing diamond, which is characterized by comprising the following steps: the method comprises the following steps:
simulating space environment, adopting linear accelerator to control electrons to be distributed basically and uniformly at energy points with energy sizes of 0.1MeV, 1MeV, 5MeV, 7MeV, 9MeV and 15MeV respectively, controlling protons to be distributed basically and uniformly at energy points with energy sizes of 0.1MeV, 1MeV, 5MeV, 7MeV and 10MeV respectively, and controlling total flux of the protons and the electrons to be 1 x 1014Per cm2Or 1X 1015Per cm2Or 1X 1016Per cm2；
And placing the diamond to be treated in the simulated space environment for radiation treatment to obtain the diamond without an obvious umbrella-shaped structure.
2. The method of diamond processing according to claim 1, comprising applying protection to the diamond to prevent and/or reduce corrosion by atomic oxygen before the diamond receives radiation.
3. The method of diamond processing according to claim 2, wherein the protection applied to the diamond is at least one of forming a protective layer on the surface of the diamond and placing the diamond in a closed container.
4. The method of diamond processing according to claim 3, wherein the protective layer thickness is less than 100 microns.
5. The method of diamond processing according to claim 3, wherein the protective layer is formed of one or more materials selected from the group consisting of a polymer material, a metal, and an inorganic non-metal material.
6. The method of diamond processing according to claim 5, wherein the polymer material is at least one selected from the group consisting of polyether ketones, polyesters, polyethers, polyimides, polyamides, polyphenylene sulfides, poly (meth) acrylates, and polyolefins.
7. The method of diamond processing according to claim 5, wherein the inorganic non-metallic material is an inorganic oxide.
8. The method of claim 7, wherein the inorganic oxide is formed of at least one material selected from the group consisting of silicon dioxide, titanium dioxide, and zirconium dioxide.
9. The method of diamond processing according to claim 5, wherein the metal material is formed of at least one material selected from the group consisting of magnesium and aluminum.
10. A modified diamond treated by the method of any one of claims 1 to 9.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711065835.5A CN107892297B (en) | 2017-11-02 | 2017-11-02 | Diamond treatment method and modified diamond |
| PCT/CN2018/097792 WO2019085558A1 (en) | 2017-11-02 | 2018-07-31 | Method for treating gemstone, and modified gemstone |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711065835.5A CN107892297B (en) | 2017-11-02 | 2017-11-02 | Diamond treatment method and modified diamond |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN107892297A CN107892297A (en) | 2018-04-10 |
| CN107892297B true CN107892297B (en) | 2021-04-06 |
Family
ID=61803956
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711065835.5A Active CN107892297B (en) | 2017-11-02 | 2017-11-02 | Diamond treatment method and modified diamond |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107892297B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2019085558A1 (en) * | 2017-11-02 | 2019-05-09 | 长沙新材料产业研究院有限公司 | Method for treating gemstone, and modified gemstone |
| CN114343572B (en) * | 2021-12-21 | 2023-03-31 | 中国人民解放军军事科学院国防科技创新研究院 | In-vivo biological nerve information detection method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1912197A (en) * | 2000-08-11 | 2007-02-14 | 贝拉泰尔国际有限责任公司 | Method for changing color of discolored natural diamond |
| CN101395246A (en) * | 2006-03-02 | 2009-03-25 | 株式会社神户制钢所 | Beam detecting member and beam detector using it |
| CN101679040A (en) * | 2007-05-10 | 2010-03-24 | 国家健康与医学研究院 | Method to produce light-emitting nano-particles of diamond |
| CN105271180A (en) * | 2015-11-19 | 2016-01-27 | 刘逸舟 | Memory diamond making method and method for detecting carbon content of made diamond |
-
2017
- 2017-11-02 CN CN201711065835.5A patent/CN107892297B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1912197A (en) * | 2000-08-11 | 2007-02-14 | 贝拉泰尔国际有限责任公司 | Method for changing color of discolored natural diamond |
| CN101395246A (en) * | 2006-03-02 | 2009-03-25 | 株式会社神户制钢所 | Beam detecting member and beam detector using it |
| CN101679040A (en) * | 2007-05-10 | 2010-03-24 | 国家健康与医学研究院 | Method to produce light-emitting nano-particles of diamond |
| CN105271180A (en) * | 2015-11-19 | 2016-01-27 | 刘逸舟 | Memory diamond making method and method for detecting carbon content of made diamond |
Non-Patent Citations (1)
| Title |
|---|
| 电子辐照处理IIa型金刚石的颜色变化研究;臧传义等;《金刚石与磨料磨具工程》;20161231;第63-63页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN107892297A (en) | 2018-04-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107840331B (en) | Diamond modification method and modified diamond | |
| Jeong et al. | Heterogeneous defect domains in single‐crystalline hexagonal WS2 | |
| Yang et al. | Origin of the surface recombination centers in ZnO nanorods arrays by X-ray photoelectron spectroscopy | |
| KR101761327B1 (en) | Multilayer barrier film | |
| CN107892297B (en) | Diamond treatment method and modified diamond | |
| Chen et al. | Acrylic acid polymer coatings on silk fibers by room‐temperature APGD plasma jets | |
| Ashcheulov et al. | Thin polycrystalline diamond films protecting zirconium alloys surfaces: From technology to layer analysis and application in nuclear facilities | |
| Clark et al. | Ultra-thin alumina layer encapsulation of bulk heterojunction organic photovoltaics for enhanced device lifetime | |
| Walz et al. | Generation of clean iron nanocrystals on an ultra-thin SiO x film on Si (001) | |
| Frank et al. | Treatment of surfaces with low-energy electrons | |
| Hattori et al. | ZnO nanobox luminescent source fabricated by three-dimensional nanotemplate pulsed-laser deposition | |
| Drako et al. | Structural changes in iron after nitrogen and carbon ion implantation | |
| Taylor et al. | Time of flight secondary ion mass spectrometry—A method to evaluate plasma-modified three-dimensional scaffold chemistry | |
| Wang et al. | Optical-force-directed single-particle-based track etching in polystyrene films | |
| Kobayashi et al. | Metallic nanoparticles formed in polyimide by ion implantation | |
| Fernandez-Lima et al. | Structural characterization of chemically deposited PbS thin films | |
| Pudasaini et al. | Insights into Nb3Sn coating of CEBAF cavities from witness sample analysis | |
| Atrashchenko et al. | Wire metamaterial based on semiconductor matrices | |
| Kumar et al. | Creation of uniformly dispersed nitrogen-vacancy centers in nano-diamonds by low energy ion-irradiation | |
| WO2007142610A1 (en) | Method and device for selective etching of composite materials by laser ablation | |
| WO2019085558A1 (en) | Method for treating gemstone, and modified gemstone | |
| CN110683532B (en) | Method for improving corrosion resistance of CVD graphene film | |
| Lavrentiev et al. | Quantum plasmon and Rashba-like spin splitting in self-assembled CoxC60 composites with enhanced Co content (x> 15) | |
| Bobrovich et al. | Composition and morphology of Ti and W coatings deposited on silicon during ion-beam assistance | |
| Sandomirskii et al. | Femtosecond direct laser writing on bi-layer gold-silicon films for hidden data storage and random key generation |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address | ||
| CP03 | Change of name, title or address |
Address after: 7th Floor, Building B8, Lugu Enterprise Plaza, Yuelu District, Changsha City, Hunan Province, 410000 Patentee after: Aerospace Science and Industry (Changsha) New Materials Research Institute Co.,Ltd. Address before: 410205 7th floor, building B8, Lugu Enterprise Square, Yuelu District, Changsha City, Hunan Province Patentee before: CHANGSHA ADVANCED MATERIALS INDUSTRIAL RESEARCH INSTITUTE Co.,Ltd. |