CN107887479A - A kind of preparation method based on CNT cadmium sulfide photoelectricity composite material - Google Patents
A kind of preparation method based on CNT cadmium sulfide photoelectricity composite material Download PDFInfo
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- CN107887479A CN107887479A CN201711373773.4A CN201711373773A CN107887479A CN 107887479 A CN107887479 A CN 107887479A CN 201711373773 A CN201711373773 A CN 201711373773A CN 107887479 A CN107887479 A CN 107887479A
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- 229910052980 cadmium sulfide Inorganic materials 0.000 title claims abstract description 35
- 239000002131 composite material Substances 0.000 title claims abstract description 29
- 230000005622 photoelectricity Effects 0.000 title claims abstract description 27
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 title abstract description 13
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 28
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910021555 Chromium Chloride Inorganic materials 0.000 claims abstract description 17
- QSWDMMVNRMROPK-UHFFFAOYSA-K chromium(3+) trichloride Chemical compound [Cl-].[Cl-].[Cl-].[Cr+3] QSWDMMVNRMROPK-UHFFFAOYSA-K 0.000 claims abstract description 17
- 229910052979 sodium sulfide Inorganic materials 0.000 claims abstract description 16
- GRVFOGOEDUUMBP-UHFFFAOYSA-N sodium sulfide (anhydrous) Chemical compound [Na+].[Na+].[S-2] GRVFOGOEDUUMBP-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000008367 deionised water Substances 0.000 claims abstract description 14
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 14
- 239000000725 suspension Substances 0.000 claims abstract description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000002041 carbon nanotube Substances 0.000 claims abstract description 11
- 229910021393 carbon nanotube Inorganic materials 0.000 claims abstract description 11
- 238000000265 homogenisation Methods 0.000 claims abstract description 7
- 238000001027 hydrothermal synthesis Methods 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 16
- 239000007788 liquid Substances 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 9
- 230000009466 transformation Effects 0.000 abstract description 3
- 238000003828 vacuum filtration Methods 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000011232 storage material Substances 0.000 description 1
- 238000004073 vulcanization Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
- G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a kind of preparation method based on CNT cadmium sulfide photoelectricity composite material, including：(1) CNT is added in ethanol and the mixed liquor of deionized water, 2~3h of ultrasonic disperse, obtains carbon nano tube suspension；(2) hydro-thermal method is utilized, above-mentioned carbon nano tube suspension is heat-treated, resulting product carries out homogenization under certain condition, obtains CNT gel；(3) chromium chloride solution is added into above-mentioned CNT gel, 1~2h of ultrasonic disperse under the conditions of lucifuge, it is 20~25 DEG C to control temperature conditionss, sodium sulfide solution is added, 1~2h of ultrasonic disperse, is stood, vacuum filtration, dry, obtain CNT cadmium sulfide photoelectricity composite material.It is evenly dispersed in by what the method in the present invention was prepared based on CNT cadmium sulfide photoelectricity composite material, cadmium sulfide in surface and the hole of CNT, so as to effectively increase the photoelectric transformation efficiency of the CNT cadmium sulfide photoelectricity composite material.
Description
Technical field
The present invention relates to field of material technology, and CNT-cadmium sulfide photoelectricity composite material is based on more particularly to one kind
Preparation method.
Background technology
Cadmium sulfide is a kind of good narrow-band semiconductor, there is excellent photoelectric respone to visible ray, in photoelectric tube, photosensitive electricity
There is good application prospect in the fields such as resistance, solar cell, photochemical catalyst.But the pattern and micro-structural of cadmium sulfide are to its performance shadow
Sound is very large, and especially it easily reunites in preparation process, easily forms bulk cadmium sulfide so that performance substantially reduces.
CNT is that one kind has the premium properties such as electric-conductivity heat-conductivity high, high-specific surface area, high mechanical properties, height absorption
Monodimension nanometer material, because the advantages of its is numerous is in many high-tech sectors such as photoelectric material, energy storage material, sensor, biological device
Part etc. has the unrivaled advantage of traditional material, and causes extensive research in subjects such as material, physics, chemistry, biologies.But
Because CNT has one-dimensional nano structure feature, draw ratio is big, simultaneously as Van der Waals larger between CNT draws
Power and huge specific surface area, therefore easily exist to tangle cluster states.How play CNT excellent properties
Enable the CNT in CNT-cadmium sulfide composite material is dispersed to turn into key factor.
For this reason, it is necessary in view of the above-mentioned problems, propose a kind of preparation based on CNT-cadmium sulfide photoelectricity composite material
Method, it can solve the problem that problems of the prior art.
The content of the invention
It is an object of the invention to provide a kind of preparation method based on CNT-cadmium sulfide photoelectricity composite material, with
Overcome deficiency of the prior art.
To achieve the above object, the present invention provides following technical scheme：
A kind of preparation method based on CNT-cadmium sulfide photoelectricity composite material, including：
(1) CNT is added in ethanol and the mixed liquor of deionized water, 2~3h of ultrasonic disperse, obtains CNT
Suspension；
(2) hydro-thermal method is utilized, above-mentioned carbon nano tube suspension is heat-treated, resulting product is under certain condition
Homogenization is carried out, obtains CNT gel；
(3) chromium chloride solution is added into above-mentioned CNT gel, 1~2h of ultrasonic disperse under the conditions of lucifuge, control
Temperature conditionss are 20~25 DEG C, add sodium sulfide solution, 1~2h of ultrasonic disperse, stand, be filtered by vacuum, dry, obtain carbon nanometer
Pipe-cadmium sulfide photoelectricity composite material.
Preferably, in step (1), in the mixed liquor of the ethanol and deionized water, the ethanol and the deionized water
The ratio between volume be 1:1~5.
Preferably, in step (2), the certain condition is：200~500MPa of pressure, 0.05~0.1mm of aperture.
Preferably, in step (3), ultrasonic power is 500~800W.
Preferably, in step (3), the ratio between amount of material of the chromium chloride solution and the sodium sulfide solution is 1:1~
5。
Preferably, the ratio between the chromium chloride solution and the amount of material of the sodium sulfide solution are 1:1~3.
Compared with prior art, the advantage of the invention is that：Received by what the method in the present invention was prepared based on carbon
Mitron-cadmium sulfide photoelectricity composite material, cadmium sulfide are evenly dispersed in surface and the hole of CNT, so as to effectively improve
The photoelectric transformation efficiency of the CNT-cadmium sulfide photoelectricity composite material.
Embodiment
The present invention is described further by the following example：According to following embodiments, the present invention may be better understood.
However, as it will be easily appreciated by one skilled in the art that specific material ratio, process conditions and its result described by embodiment are only used
In the explanation present invention, without should be also without limitation on the present invention described in detail in claims.
The present invention discloses a kind of preparation method based on CNT-cadmium sulfide photoelectricity composite material, including：
(1) CNT is added in ethanol and the mixed liquor of deionized water, 2~3h of ultrasonic disperse, obtains CNT
Suspension；
(2) hydro-thermal method is utilized, above-mentioned carbon nano tube suspension is heat-treated, resulting product is under certain condition
Homogenization is carried out, obtains CNT gel；
(3) chromium chloride solution is added into above-mentioned CNT gel, 1~2h of ultrasonic disperse under the conditions of lucifuge, control
Temperature conditionss are 20~25 DEG C, add sodium sulfide solution, 1~2h of ultrasonic disperse, stand, be filtered by vacuum, dry, obtain carbon nanometer
Pipe-cadmium sulfide photoelectricity composite material.
In above-mentioned steps (1), in the mixed liquor of the ethanol and deionized water, the body of the ethanol and the deionized water
The ratio between product is 1:1~5, it is preferred that the ratio between volume of the ethanol and the deionized water is 1:2.
In above-mentioned steps (2), the certain condition is：200~500MPa of pressure, 0.05~0.1mm of aperture, it is preferred that
200~300MPa of pressure, 0.05~0.08mm of aperture.
In above-mentioned steps (3), ultrasonic power is 500~800W, it is preferred that ultrasonic power is 750~800W；Step (3)
In, the ratio between amount of material of the chromium chloride solution and the sodium sulfide solution is 1:1~5, it is preferred that the chromium chloride solution
It is 1 with the ratio between the amount of material of the sodium sulfide solution:1~3, it is further preferred that the chromium chloride solution and the vulcanization
The ratio between amount of material of sodium solution is 1:3.
Embodiment 1
(1) it is 1 CNT to be added into the ratio between volume:In 1 ethanol and the mixed liquor of deionized water, ultrasonic disperse 2h,
Obtain carbon nano tube suspension；
(2) hydro-thermal method is utilized, above-mentioned carbon nano tube suspension is heat-treated, resulting product is in pressure
Homogenization is carried out under conditions of 200MPa, aperture 0.05mm, obtains CNT gel；
(3) chromium chloride solution is added into above-mentioned CNT gel, 1~2h of ultrasonic disperse under the conditions of lucifuge, control
Temperature conditionss are 20~25 DEG C, add sodium sulfide solution, 1~2h of ultrasonic disperse, stand, be filtered by vacuum, dry, obtain carbon nanometer
Pipe-cadmium sulfide photoelectricity composite material, wherein, ultrasonic power uses 500W, the chromium chloride solution and the sodium sulfide solution
The ratio between amount of material is 1:1.
Embodiment 2
(1) it is 1 CNT to be added into the ratio between volume:In 2 ethanol and the mixed liquor of deionized water, ultrasonic disperse
2.5h, obtain carbon nano tube suspension；
(2) hydro-thermal method is utilized, above-mentioned carbon nano tube suspension is heat-treated, resulting product is in pressure
Homogenization is carried out under conditions of 300MPa, aperture 0.08mm, obtains CNT gel；
(3) chromium chloride solution is added into above-mentioned CNT gel, 1~2h of ultrasonic disperse under the conditions of lucifuge, control
Temperature conditionss are 20~25 DEG C, add sodium sulfide solution, 1~2h of ultrasonic disperse, stand, be filtered by vacuum, dry, obtain carbon nanometer
Pipe-cadmium sulfide photoelectricity composite material, wherein, ultrasonic power uses 750W, the chromium chloride solution and the sodium sulfide solution
The ratio between amount of material is 1:3.
Embodiment 3
(1) it is 1 CNT to be added into the ratio between volume:In 5 ethanol and the mixed liquor of deionized water, ultrasonic disperse 3h,
Obtain carbon nano tube suspension；
(2) hydro-thermal method is utilized, above-mentioned carbon nano tube suspension is heat-treated, resulting product is in pressure
Homogenization is carried out under conditions of 500MPa, aperture 0.1mm, obtains CNT gel；
(3) chromium chloride solution is added into above-mentioned CNT gel, 1~2h of ultrasonic disperse under the conditions of lucifuge, control
Temperature conditionss are 20~25 DEG C, add sodium sulfide solution, 1~2h of ultrasonic disperse, stand, be filtered by vacuum, dry, obtain carbon nanometer
Pipe-cadmium sulfide photoelectricity composite material, wherein, ultrasonic power uses 800W, the chromium chloride solution and the sodium sulfide solution
The ratio between amount of material is 1:5.
To carrying out electron-microscope scanning using CNT-cadmium sulfide photoelectricity composite material made from the method in above-described embodiment
It was found that cadmium sulfide can be evenly dispersed in surface and the hole of CNT；Meanwhile to CNT obtained above-
Knowable to the photoelectric properties of cadmium sulfide photoelectricity composite material are analyzed, by the way that cadmium sulfide and CNT are carried out into recombination reaction,
Effectively increase the photoelectric transformation efficiency of the composite.
Finally, it is to be noted that, term " comprising ", "comprising" or its any other variant be intended to it is non-exclusive
Property includes, so that process, method, article or equipment including a series of elements not only include those key elements, and
Also include the other element that is not expressly set out, or also include for this process, method, article or equipment inherently
Key element.
Claims (6)
- A kind of 1. preparation method based on CNT-cadmium sulfide photoelectricity composite material, it is characterised in that including：(1) CNT is added in ethanol and the mixed liquor of deionized water, 2~3h of ultrasonic disperse, obtains CNT suspension Liquid；(2) hydro-thermal method is utilized, above-mentioned carbon nano tube suspension is heat-treated, resulting product is carried out under certain condition Homogenization, obtain CNT gel；(3) chromium chloride solution is added into above-mentioned CNT gel, 1~2h of ultrasonic disperse under the conditions of lucifuge, controls temperature Condition be 20~25 DEG C, add sodium sulfide solution, 1~2h of ultrasonic disperse, stand, be filtered by vacuum, dry, obtain CNT- Cadmium sulfide photoelectricity composite material.
- 2. the preparation method according to claim 1 based on CNT-cadmium sulfide photoelectricity composite material, its feature exist In in step (1), in the mixed liquor of the ethanol and deionized water, the ratio between volume of the ethanol and the deionized water is 1:1~5.
- 3. the preparation method according to claim 1 based on CNT-cadmium sulfide photoelectricity composite material, its feature exist In in step (2), the certain condition is：200~500MPa of pressure, 0.05~0.1mm of aperture.
- 4. the preparation method according to claim 1 based on CNT-cadmium sulfide photoelectricity composite material, its feature exist In in step (3), ultrasonic power is 500~800W.
- 5. the preparation method according to claim 1 based on CNT-cadmium sulfide photoelectricity composite material, its feature exist In in step (3), the ratio between amount of material of the chromium chloride solution and the sodium sulfide solution is 1:1~5.
- 6. the preparation method according to claim 5 based on CNT-cadmium sulfide photoelectricity composite material, its feature exist In the ratio between amount of material of the chromium chloride solution and the sodium sulfide solution is 1:1~3.
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| CN201711373773.4A CN107887479A (en) | 2017-12-19 | 2017-12-19 | A kind of preparation method based on CNT cadmium sulfide photoelectricity composite material |
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| CN201711373773.4A CN107887479A (en) | 2017-12-19 | 2017-12-19 | A kind of preparation method based on CNT cadmium sulfide photoelectricity composite material |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117577745A (en) * | 2024-01-17 | 2024-02-20 | 广州市尤特新材料有限公司 | Doping method for improving electronic performance of cadmium telluride film |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101157437A (en) * | 2007-10-23 | 2008-04-09 | 浙江大学 | Method for preparing carbon nano-tube/CdS nano flower composite material |
| US20100133471A1 (en) * | 2006-05-23 | 2010-06-03 | The University Of Akron | Dendron-tethered and templated quantum dots on carbon nanotubes |
| JP6207331B2 (en) * | 2013-10-02 | 2017-10-04 | Ｊｆｅエンジニアリング株式会社 | Solar cell and method for producing carbon electrode thereof |
-
2017
- 2017-12-19 CN CN201711373773.4A patent/CN107887479A/en not_active Withdrawn
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100133471A1 (en) * | 2006-05-23 | 2010-06-03 | The University Of Akron | Dendron-tethered and templated quantum dots on carbon nanotubes |
| CN101157437A (en) * | 2007-10-23 | 2008-04-09 | 浙江大学 | Method for preparing carbon nano-tube/CdS nano flower composite material |
| JP6207331B2 (en) * | 2013-10-02 | 2017-10-04 | Ｊｆｅエンジニアリング株式会社 | Solar cell and method for producing carbon electrode thereof |
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| CHEN LI，ETC.: "Photovoltaic Property of a Vertically Aligned Carbon Nanotube Hexagonal Network Assembled with CdS Quantum Dots", 《APPLIED MATERIALS & INTERFACES》 * |
| 马强 等: "在碳纳米管上负载硫化镉的研究", 《无机材料学报》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117577745A (en) * | 2024-01-17 | 2024-02-20 | 广州市尤特新材料有限公司 | Doping method for improving electronic performance of cadmium telluride film |
| CN117577745B (en) * | 2024-01-17 | 2024-03-26 | 广州市尤特新材料有限公司 | Doping method for improving electronic performance of cadmium telluride film |
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