CN107887320A - 倒装芯片型半导体背面用膜和半导体背面用切割带集成膜 - Google Patents
倒装芯片型半导体背面用膜和半导体背面用切割带集成膜 Download PDFInfo
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- CN107887320A CN107887320A CN201711144950.1A CN201711144950A CN107887320A CN 107887320 A CN107887320 A CN 107887320A CN 201711144950 A CN201711144950 A CN 201711144950A CN 107887320 A CN107887320 A CN 107887320A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 500
- 230000003746 surface roughness Effects 0.000 claims abstract description 20
- 239000010410 layer Substances 0.000 claims description 86
- 238000005520 cutting process Methods 0.000 claims description 85
- 239000000463 material Substances 0.000 claims description 82
- 229920005989 resin Polymers 0.000 claims description 77
- 239000011347 resin Substances 0.000 claims description 76
- 239000004820 Pressure-sensitive adhesive Substances 0.000 claims description 51
- 239000004020 conductor Substances 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 19
- 239000011256 inorganic filler Substances 0.000 claims description 8
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 8
- 238000003475 lamination Methods 0.000 claims description 3
- -1 polybutylene terephthalate Polymers 0.000 description 69
- 239000002585 base Substances 0.000 description 65
- 235000012431 wafers Nutrition 0.000 description 52
- 239000003431 cross linking reagent Substances 0.000 description 51
- 229920000647 polyepoxide Polymers 0.000 description 47
- 238000000034 method Methods 0.000 description 45
- 239000003822 epoxy resin Substances 0.000 description 41
- 238000003860 storage Methods 0.000 description 41
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 38
- 239000000178 monomer Substances 0.000 description 34
- 239000003795 chemical substances by application Substances 0.000 description 33
- 239000004821 Contact adhesive Substances 0.000 description 32
- 239000003086 colorant Substances 0.000 description 31
- 239000000203 mixture Substances 0.000 description 30
- 239000000853 adhesive Substances 0.000 description 29
- 230000001070 adhesive effect Effects 0.000 description 29
- 238000004519 manufacturing process Methods 0.000 description 26
- 150000002148 esters Chemical class 0.000 description 24
- 230000004888 barrier function Effects 0.000 description 23
- 229920001187 thermosetting polymer Polymers 0.000 description 23
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 22
- 239000002253 acid Substances 0.000 description 22
- 229920001568 phenolic resin Polymers 0.000 description 22
- 239000005011 phenolic resin Substances 0.000 description 22
- 238000004040 coloring Methods 0.000 description 19
- 239000000243 solution Substances 0.000 description 19
- 239000000945 filler Substances 0.000 description 17
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 16
- 239000000049 pigment Substances 0.000 description 16
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 15
- 229920006287 phenoxy resin Polymers 0.000 description 15
- 239000013034 phenoxy resin Substances 0.000 description 15
- 239000003054 catalyst Substances 0.000 description 14
- 238000000576 coating method Methods 0.000 description 14
- NIXOWILDQLNWCW-UHFFFAOYSA-N 2-Propenoic acid Natural products OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 13
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 13
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical group C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 13
- 238000010330 laser marking Methods 0.000 description 13
- 239000003921 oil Substances 0.000 description 13
- 238000001029 thermal curing Methods 0.000 description 13
- 239000004925 Acrylic resin Substances 0.000 description 12
- 229920000178 Acrylic resin Polymers 0.000 description 12
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 12
- 239000004593 Epoxy Substances 0.000 description 12
- 239000000975 dye Substances 0.000 description 12
- 229920003023 plastic Polymers 0.000 description 12
- 239000004033 plastic Substances 0.000 description 12
- 238000012545 processing Methods 0.000 description 12
- 238000002360 preparation method Methods 0.000 description 11
- 238000007711 solidification Methods 0.000 description 11
- 230000008023 solidification Effects 0.000 description 11
- 239000000126 substance Substances 0.000 description 11
- 239000011248 coating agent Substances 0.000 description 10
- 229920000139 polyethylene terephthalate Polymers 0.000 description 10
- 239000005020 polyethylene terephthalate Substances 0.000 description 10
- 229920000642 polymer Polymers 0.000 description 10
- 239000002904 solvent Substances 0.000 description 10
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 9
- 238000001723 curing Methods 0.000 description 9
- 238000009434 installation Methods 0.000 description 9
- 229920003986 novolac Chemical group 0.000 description 9
- 241000894007 species Species 0.000 description 9
- 229920005992 thermoplastic resin Polymers 0.000 description 9
- 238000002834 transmittance Methods 0.000 description 9
- SMZOUWXMTYCWNB-UHFFFAOYSA-N 2-(2-methoxy-5-methylphenyl)ethanamine Chemical compound COC1=CC=C(C)C=C1CCN SMZOUWXMTYCWNB-UHFFFAOYSA-N 0.000 description 8
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Natural products CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 8
- 150000001336 alkenes Chemical class 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- 239000011162 core material Substances 0.000 description 8
- 230000036541 health Effects 0.000 description 8
- 238000013007 heat curing Methods 0.000 description 8
- 150000003949 imides Chemical class 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 229920001296 polysiloxane Polymers 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000000654 additive Substances 0.000 description 7
- 239000012948 isocyanate Substances 0.000 description 7
- 229910052752 metalloid Inorganic materials 0.000 description 7
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 7
- 239000007787 solid Substances 0.000 description 7
- 229930185605 Bisphenol Natural products 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 6
- 229920001577 copolymer Polymers 0.000 description 6
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical group C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 6
- 125000003700 epoxy group Chemical group 0.000 description 6
- 239000011888 foil Substances 0.000 description 6
- 239000011133 lead Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 239000005056 polyisocyanate Substances 0.000 description 6
- 229920001228 polyisocyanate Polymers 0.000 description 6
- 239000004814 polyurethane Substances 0.000 description 6
- 229920002635 polyurethane Polymers 0.000 description 6
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical class CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 6
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 5
- 125000000217 alkyl group Chemical group 0.000 description 5
- 125000004432 carbon atom Chemical group C* 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 238000005538 encapsulation Methods 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 150000002513 isocyanates Chemical class 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 5
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 5
- 238000005406 washing Methods 0.000 description 5
- 239000013585 weight reducing agent Substances 0.000 description 5
- 241001050985 Disco Species 0.000 description 4
- 239000004150 EU approved colour Substances 0.000 description 4
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 4
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 4
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 238000007792 addition Methods 0.000 description 4
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 229940106691 bisphenol a Drugs 0.000 description 4
- 238000010276 construction Methods 0.000 description 4
- 230000001419 dependent effect Effects 0.000 description 4
- 239000003063 flame retardant Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 4
- 229940006093 opthalmologic coloring agent diagnostic Drugs 0.000 description 4
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 4
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 4
- 229920001707 polybutylene terephthalate Polymers 0.000 description 4
- 229920001223 polyethylene glycol Polymers 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 229920001451 polypropylene glycol Polymers 0.000 description 4
- 239000011342 resin composition Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000004677 Nylon Substances 0.000 description 3
- 239000002202 Polyethylene glycol Substances 0.000 description 3
- 239000004743 Polypropylene Substances 0.000 description 3
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 3
- QOSMNYMQXIVWKY-UHFFFAOYSA-N Propyl levulinate Chemical compound CCCOC(=O)CCC(C)=O QOSMNYMQXIVWKY-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical group C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 3
- 125000001931 aliphatic group Chemical group 0.000 description 3
- 125000005250 alkyl acrylate group Chemical group 0.000 description 3
- 239000003963 antioxidant agent Substances 0.000 description 3
- 230000003078 antioxidant effect Effects 0.000 description 3
- 239000004760 aramid Substances 0.000 description 3
- 229920003235 aromatic polyamide Polymers 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000004305 biphenyl Chemical group 0.000 description 3
- 235000010290 biphenyl Nutrition 0.000 description 3
- IAQRGUVFOMOMEM-UHFFFAOYSA-N but-2-ene Chemical group CC=CC IAQRGUVFOMOMEM-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 150000002118 epoxides Chemical class 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 3
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 3
- 239000011976 maleic acid Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- YPHQUSNPXDGUHL-UHFFFAOYSA-N n-methylprop-2-enamide Chemical compound CNC(=O)C=C YPHQUSNPXDGUHL-UHFFFAOYSA-N 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 229920001778 nylon Polymers 0.000 description 3
- 229920002647 polyamide Polymers 0.000 description 3
- 229920000728 polyester Polymers 0.000 description 3
- 229920001155 polypropylene Polymers 0.000 description 3
- ULWHHBHJGPPBCO-UHFFFAOYSA-N propane-1,1-diol Chemical class CCC(O)O ULWHHBHJGPPBCO-UHFFFAOYSA-N 0.000 description 3
- 230000002787 reinforcement Effects 0.000 description 3
- 229920003987 resole Polymers 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000001060 yellow colorant Substances 0.000 description 3
- 229910000859 α-Fe Inorganic materials 0.000 description 3
- JNYAEWCLZODPBN-JGWLITMVSA-N (2r,3r,4s)-2-[(1r)-1,2-dihydroxyethyl]oxolane-3,4-diol Chemical compound OC[C@@H](O)[C@H]1OC[C@H](O)[C@H]1O JNYAEWCLZODPBN-JGWLITMVSA-N 0.000 description 2
- MYRTYDVEIRVNKP-UHFFFAOYSA-N 1,2-Divinylbenzene Chemical compound C=CC1=CC=CC=C1C=C MYRTYDVEIRVNKP-UHFFFAOYSA-N 0.000 description 2
- FKTHNVSLHLHISI-UHFFFAOYSA-N 1,2-bis(isocyanatomethyl)benzene Chemical compound O=C=NCC1=CC=CC=C1CN=C=O FKTHNVSLHLHISI-UHFFFAOYSA-N 0.000 description 2
- UWFRVQVNYNPBEF-UHFFFAOYSA-N 1-(2,4-dimethylphenyl)propan-1-one Chemical compound CCC(=O)C1=CC=C(C)C=C1C UWFRVQVNYNPBEF-UHFFFAOYSA-N 0.000 description 2
- WAPNOHKVXSQRPX-UHFFFAOYSA-N 1-phenylethanol Chemical class CC(O)C1=CC=CC=C1 WAPNOHKVXSQRPX-UHFFFAOYSA-N 0.000 description 2
- KQSMCAVKSJWMSI-UHFFFAOYSA-N 2,4-dimethyl-1-n,1-n,3-n,3-n-tetrakis(oxiran-2-ylmethyl)benzene-1,3-diamine Chemical compound CC1=C(N(CC2OC2)CC2OC2)C(C)=CC=C1N(CC1OC1)CC1CO1 KQSMCAVKSJWMSI-UHFFFAOYSA-N 0.000 description 2
- DGXAGETVRDOQFP-UHFFFAOYSA-N 2,6-dihydroxybenzaldehyde Chemical compound OC1=CC=CC(O)=C1C=O DGXAGETVRDOQFP-UHFFFAOYSA-N 0.000 description 2
- JAHNSTQSQJOJLO-UHFFFAOYSA-N 2-(3-fluorophenyl)-1h-imidazole Chemical compound FC1=CC=CC(C=2NC=CN=2)=C1 JAHNSTQSQJOJLO-UHFFFAOYSA-N 0.000 description 2
- AOBIOSPNXBMOAT-UHFFFAOYSA-N 2-[2-(oxiran-2-ylmethoxy)ethoxymethyl]oxirane Chemical compound C1OC1COCCOCC1CO1 AOBIOSPNXBMOAT-UHFFFAOYSA-N 0.000 description 2
- WTYYGFLRBWMFRY-UHFFFAOYSA-N 2-[6-(oxiran-2-ylmethoxy)hexoxymethyl]oxirane Chemical class C1OC1COCCCCCCOCC1CO1 WTYYGFLRBWMFRY-UHFFFAOYSA-N 0.000 description 2
- KUAUJXBLDYVELT-UHFFFAOYSA-N 2-[[2,2-dimethyl-3-(oxiran-2-ylmethoxy)propoxy]methyl]oxirane Chemical compound C1OC1COCC(C)(C)COCC1CO1 KUAUJXBLDYVELT-UHFFFAOYSA-N 0.000 description 2
- JTXMVXSTHSMVQF-UHFFFAOYSA-N 2-acetyloxyethyl acetate Chemical compound CC(=O)OCCOC(C)=O JTXMVXSTHSMVQF-UHFFFAOYSA-N 0.000 description 2
- KANZWHBYRHQMKZ-UHFFFAOYSA-N 2-ethenylpyrazine Chemical compound C=CC1=CN=CC=N1 KANZWHBYRHQMKZ-UHFFFAOYSA-N 0.000 description 2
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical compound CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 2
- SVTBMSDMJJWYQN-UHFFFAOYSA-N 2-methylpentane-2,4-diol Chemical compound CC(O)CC(C)(C)O SVTBMSDMJJWYQN-UHFFFAOYSA-N 0.000 description 2
- 125000003504 2-oxazolinyl group Chemical class O1C(=NCC1)* 0.000 description 2
- AGBXYHCHUYARJY-UHFFFAOYSA-N 2-phenylethenesulfonic acid Chemical compound OS(=O)(=O)C=CC1=CC=CC=C1 AGBXYHCHUYARJY-UHFFFAOYSA-N 0.000 description 2
- OFNISBHGPNMTMS-UHFFFAOYSA-N 3-methylideneoxolane-2,5-dione Chemical compound C=C1CC(=O)OC1=O OFNISBHGPNMTMS-UHFFFAOYSA-N 0.000 description 2
- CYUZOYPRAQASLN-UHFFFAOYSA-N 3-prop-2-enoyloxypropanoic acid Chemical compound OC(=O)CCOC(=O)C=C CYUZOYPRAQASLN-UHFFFAOYSA-N 0.000 description 2
- JSZCJJRQCFZXCI-UHFFFAOYSA-N 6-prop-2-enoyloxyhexanoic acid Chemical compound OC(=O)CCCCCOC(=O)C=C JSZCJJRQCFZXCI-UHFFFAOYSA-N 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N Bisphenol F Natural products C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- JBJKYOYCKIXOQM-UHFFFAOYSA-N CC(C(=O)O)=C.[S] Chemical compound CC(C(=O)O)=C.[S] JBJKYOYCKIXOQM-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 description 2
- FBPFZTCFMRRESA-JGWLITMVSA-N D-glucitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-JGWLITMVSA-N 0.000 description 2
- 239000004606 Fillers/Extenders Substances 0.000 description 2
- HSRJKNPTNIJEKV-UHFFFAOYSA-N Guaifenesin Chemical compound COC1=CC=CC=C1OCC(O)CO HSRJKNPTNIJEKV-UHFFFAOYSA-N 0.000 description 2
- 239000005057 Hexamethylene diisocyanate Substances 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- 239000005058 Isophorone diisocyanate Substances 0.000 description 2
- RRHGJUQNOFWUDK-UHFFFAOYSA-N Isoprene Chemical compound CC(=C)C=C RRHGJUQNOFWUDK-UHFFFAOYSA-N 0.000 description 2
- PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical compound O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 description 2
- 229910019142 PO4 Inorganic materials 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- GLUUGHFHXGJENI-UHFFFAOYSA-N Piperazine Chemical compound C1CNCCN1 GLUUGHFHXGJENI-UHFFFAOYSA-N 0.000 description 2
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- 208000037656 Respiratory Sounds Diseases 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- ORILYTVJVMAKLC-UHFFFAOYSA-N adamantane Chemical compound C1C(C2)CC3CC1CC2C3 ORILYTVJVMAKLC-UHFFFAOYSA-N 0.000 description 2
- 239000001361 adipic acid Substances 0.000 description 2
- 235000011037 adipic acid Nutrition 0.000 description 2
- 125000002723 alicyclic group Chemical group 0.000 description 2
- 150000004703 alkoxides Chemical class 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- XLJMAIOERFSOGZ-UHFFFAOYSA-N anhydrous cyanic acid Natural products OC#N XLJMAIOERFSOGZ-UHFFFAOYSA-N 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 150000001541 aziridines Chemical class 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 210000000988 bone and bone Anatomy 0.000 description 2
- 150000001638 boron Chemical class 0.000 description 2
- 150000001642 boronic acid derivatives Chemical class 0.000 description 2
- 235000013877 carbamide Nutrition 0.000 description 2
- 150000001718 carbodiimides Chemical class 0.000 description 2
- 239000006229 carbon black Substances 0.000 description 2
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 2
- 230000001413 cellular effect Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- LDHQCZJRKDOVOX-NSCUHMNNSA-N crotonic acid Chemical compound C\C=C\C(O)=O LDHQCZJRKDOVOX-NSCUHMNNSA-N 0.000 description 2
- 150000007973 cyanuric acids Chemical class 0.000 description 2
- 150000005690 diesters Chemical class 0.000 description 2
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical compound C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 description 2
- KIQKWYUGPPFMBV-UHFFFAOYSA-N diisocyanatomethane Chemical compound O=C=NCN=C=O KIQKWYUGPPFMBV-UHFFFAOYSA-N 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000005007 epoxy-phenolic resin Substances 0.000 description 2
- 238000001125 extrusion Methods 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 125000003983 fluorenyl group Chemical group C1(=CC=CC=2C3=CC=CC=C3CC12)* 0.000 description 2
- 150000002221 fluorine Chemical class 0.000 description 2
- 239000001530 fumaric acid Substances 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 235000011187 glycerol Nutrition 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- NDJKXXJCMXVBJW-UHFFFAOYSA-N heptadecane Chemical compound CCCCCCCCCCCCCCCCC NDJKXXJCMXVBJW-UHFFFAOYSA-N 0.000 description 2
- RRAMGCGOFNQTLD-UHFFFAOYSA-N hexamethylene diisocyanate Chemical compound O=C=NCCCCCCN=C=O RRAMGCGOFNQTLD-UHFFFAOYSA-N 0.000 description 2
- 125000004836 hexamethylene group Chemical group [H]C([H])([*:2])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[*:1] 0.000 description 2
- 238000005984 hydrogenation reaction Methods 0.000 description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 2
- CBFCDTFDPHXCNY-UHFFFAOYSA-N icosane Chemical compound CCCCCCCCCCCCCCCCCCCC CBFCDTFDPHXCNY-UHFFFAOYSA-N 0.000 description 2
- 150000002460 imidazoles Chemical class 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 235000013847 iso-butane Nutrition 0.000 description 2
- NNPPMTNAJDCUHE-UHFFFAOYSA-N isobutane Chemical compound CC(C)C NNPPMTNAJDCUHE-UHFFFAOYSA-N 0.000 description 2
- NIMLQBUJDJZYEJ-UHFFFAOYSA-N isophorone diisocyanate Chemical compound CC1(C)CC(N=C=O)CC(C)(CN=C=O)C1 NIMLQBUJDJZYEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 150000007974 melamines Chemical class 0.000 description 2
- 150000002738 metalloids Chemical class 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- LVHBHZANLOWSRM-UHFFFAOYSA-N methylenebutanedioic acid Natural products OC(=O)CC(=C)C(O)=O LVHBHZANLOWSRM-UHFFFAOYSA-N 0.000 description 2
- JAYXSROKFZAHRQ-UHFFFAOYSA-N n,n-bis(oxiran-2-ylmethyl)aniline Chemical compound C1OC1CN(C=1C=CC=CC=1)CC1CO1 JAYXSROKFZAHRQ-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 150000002978 peroxides Chemical class 0.000 description 2
- 239000010452 phosphate Substances 0.000 description 2
- OJMIONKXNSYLSR-UHFFFAOYSA-N phosphorous acid Chemical group OP(O)O OJMIONKXNSYLSR-UHFFFAOYSA-N 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000004014 plasticizer Substances 0.000 description 2
- 229920000058 polyacrylate Polymers 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 229920001225 polyester resin Polymers 0.000 description 2
- 239000004645 polyester resin Substances 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 229920000069 polyphenylene sulfide Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- IJDNQMDRQITEOD-UHFFFAOYSA-N sec-butylidene Natural products CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000000600 sorbitol Substances 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- LDHQCZJRKDOVOX-UHFFFAOYSA-N trans-crotonic acid Natural products CC=CC(O)=O LDHQCZJRKDOVOX-UHFFFAOYSA-N 0.000 description 2
- 239000013638 trimer Substances 0.000 description 2
- DCXXMTOCNZCJGO-UHFFFAOYSA-N tristearoylglycerol Chemical compound CCCCCCCCCCCCCCCCCC(=O)OCC(OC(=O)CCCCCCCCCCCCCCCCC)COC(=O)CCCCCCCCCCCCCCCCC DCXXMTOCNZCJGO-UHFFFAOYSA-N 0.000 description 2
- RSJKGSCJYJTIGS-UHFFFAOYSA-N undecane Chemical compound CCCCCCCCCCC RSJKGSCJYJTIGS-UHFFFAOYSA-N 0.000 description 2
- 150000003672 ureas Chemical class 0.000 description 2
- 229920001567 vinyl ester resin Polymers 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- YRVXPERZZVUHOE-UHFFFAOYSA-N (1-methyl-2,5-dioxopyrrolidin-3-ylidene)methyl prop-2-enoate Chemical compound CN1C(C(CC1=O)=COC(C=C)=O)=O YRVXPERZZVUHOE-UHFFFAOYSA-N 0.000 description 1
- SBGKCOJQKBHFTO-UHFFFAOYSA-N (2-nonylphenyl)phosphane Chemical class CCCCCCCCCC1=CC=CC=C1P SBGKCOJQKBHFTO-UHFFFAOYSA-N 0.000 description 1
- BEVYLNVECSORPM-UHFFFAOYSA-N (4-phosphanylphenyl)methanamine Chemical compound NCC1=CC=C(P)C=C1 BEVYLNVECSORPM-UHFFFAOYSA-N 0.000 description 1
- QGKMIGUHVLGJBR-UHFFFAOYSA-M (4z)-1-(3-methylbutyl)-4-[[1-(3-methylbutyl)quinolin-1-ium-4-yl]methylidene]quinoline;iodide Chemical compound [I-].C12=CC=CC=C2N(CCC(C)C)C=CC1=CC1=CC=[N+](CCC(C)C)C2=CC=CC=C12 QGKMIGUHVLGJBR-UHFFFAOYSA-M 0.000 description 1
- RUEBPOOTFCZRBC-UHFFFAOYSA-N (5-methyl-2-phenyl-1h-imidazol-4-yl)methanol Chemical class OCC1=C(C)NC(C=2C=CC=CC=2)=N1 RUEBPOOTFCZRBC-UHFFFAOYSA-N 0.000 description 1
- OJOWICOBYCXEKR-KRXBUXKQSA-N (5e)-5-ethylidenebicyclo[2.2.1]hept-2-ene Chemical group C1C2C(=C/C)/CC1C=C2 OJOWICOBYCXEKR-KRXBUXKQSA-N 0.000 description 1
- GIWQSPITLQVMSG-UHFFFAOYSA-N 1,2-dimethylimidazole Chemical compound CC1=NC=CN1C GIWQSPITLQVMSG-UHFFFAOYSA-N 0.000 description 1
- FBMQNRKSAWNXBT-UHFFFAOYSA-N 1,4-diaminoanthracene-9,10-dione Chemical compound O=C1C2=CC=CC=C2C(=O)C2=C1C(N)=CC=C2N FBMQNRKSAWNXBT-UHFFFAOYSA-N 0.000 description 1
- DCRYNQTXGUTACA-UHFFFAOYSA-N 1-ethenylpiperazine Chemical compound C=CN1CCNCC1 DCRYNQTXGUTACA-UHFFFAOYSA-N 0.000 description 1
- PBGPBHYPCGDFEZ-UHFFFAOYSA-N 1-ethenylpiperidin-2-one Chemical compound C=CN1CCCCC1=O PBGPBHYPCGDFEZ-UHFFFAOYSA-N 0.000 description 1
- CSCSROFYRUZJJH-UHFFFAOYSA-N 1-methoxyethane-1,2-diol Chemical compound COC(O)CO CSCSROFYRUZJJH-UHFFFAOYSA-N 0.000 description 1
- HIDBROSJWZYGSZ-UHFFFAOYSA-N 1-phenylpyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C1=CC=CC=C1 HIDBROSJWZYGSZ-UHFFFAOYSA-N 0.000 description 1
- NQDOCLXQTQYUDH-UHFFFAOYSA-N 1-propan-2-ylpyrrole-2,5-dione Chemical class CC(C)N1C(=O)C=CC1=O NQDOCLXQTQYUDH-UHFFFAOYSA-N 0.000 description 1
- QNIRRHUUOQAEPB-UHFFFAOYSA-N 2-(prop-2-enoylamino)butane-2-sulfonic acid Chemical compound CCC(C)(S(O)(=O)=O)NC(=O)C=C QNIRRHUUOQAEPB-UHFFFAOYSA-N 0.000 description 1
- TXBCBTDQIULDIA-UHFFFAOYSA-N 2-[[3-hydroxy-2,2-bis(hydroxymethyl)propoxy]methyl]-2-(hydroxymethyl)propane-1,3-diol Chemical compound OCC(CO)(CO)COCC(CO)(CO)CO TXBCBTDQIULDIA-UHFFFAOYSA-N 0.000 description 1
- IUIRWOGXLQFRHG-UHFFFAOYSA-N 2-aminoethanol;trifluoroborane Chemical compound NCCO.FB(F)F IUIRWOGXLQFRHG-UHFFFAOYSA-N 0.000 description 1
- 125000000022 2-aminoethyl group Chemical group [H]C([*])([H])C([H])([H])N([H])[H] 0.000 description 1
- MLMGJTAJUDSUKA-UHFFFAOYSA-N 2-ethenyl-1h-imidazole Chemical class C=CC1=NC=CN1 MLMGJTAJUDSUKA-UHFFFAOYSA-N 0.000 description 1
- MZNSQRLUUXWLSB-UHFFFAOYSA-N 2-ethenyl-1h-pyrrole Chemical compound C=CC1=CC=CN1 MZNSQRLUUXWLSB-UHFFFAOYSA-N 0.000 description 1
- ZDHWTWWXCXEGIC-UHFFFAOYSA-N 2-ethenylpyrimidine Chemical compound C=CC1=NC=CC=N1 ZDHWTWWXCXEGIC-UHFFFAOYSA-N 0.000 description 1
- YTWBFUCJVWKCCK-UHFFFAOYSA-N 2-heptadecyl-1h-imidazole Chemical class CCCCCCCCCCCCCCCCCC1=NC=CN1 YTWBFUCJVWKCCK-UHFFFAOYSA-N 0.000 description 1
- FRWYFWZENXDZMU-UHFFFAOYSA-N 2-iodoquinoline Chemical compound C1=CC=CC2=NC(I)=CC=C21 FRWYFWZENXDZMU-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- YTPOBBOFVWMAQR-UHFFFAOYSA-N 2-methylprop-2-enoic acid pentadecane Chemical compound CCCCCCCCCCCCCCC.CC(C(=O)O)=C YTPOBBOFVWMAQR-UHFFFAOYSA-N 0.000 description 1
- HLFKUVSMWFNAMB-UHFFFAOYSA-N 2-methylprop-2-enoic acid;nonadecane Chemical compound CC(=C)C(O)=O.CCCCCCCCCCCCCCCCCCC HLFKUVSMWFNAMB-UHFFFAOYSA-N 0.000 description 1
- AUZRCMMVHXRSGT-UHFFFAOYSA-N 2-methylpropane-1-sulfonic acid;prop-2-enamide Chemical compound NC(=O)C=C.CC(C)CS(O)(=O)=O AUZRCMMVHXRSGT-UHFFFAOYSA-N 0.000 description 1
- 150000004941 2-phenylimidazoles Chemical class 0.000 description 1
- WJQOZHYUIDYNHM-UHFFFAOYSA-N 2-tert-Butylphenol Chemical compound CC(C)(C)C1=CC=CC=C1O WJQOZHYUIDYNHM-UHFFFAOYSA-N 0.000 description 1
- LLEASVZEQBICSN-UHFFFAOYSA-N 2-undecyl-1h-imidazole Chemical compound CCCCCCCCCCCC1=NC=CN1 LLEASVZEQBICSN-UHFFFAOYSA-N 0.000 description 1
- KGIGUEBEKRSTEW-UHFFFAOYSA-N 2-vinylpyridine Chemical compound C=CC1=CC=CC=N1 KGIGUEBEKRSTEW-UHFFFAOYSA-N 0.000 description 1
- FKAWETHEYBZGSR-UHFFFAOYSA-N 3-methylidenepyrrolidine-2,5-dione Chemical compound C=C1CC(=O)NC1=O FKAWETHEYBZGSR-UHFFFAOYSA-N 0.000 description 1
- VPWNQTHUCYMVMZ-UHFFFAOYSA-N 4,4'-sulfonyldiphenol Chemical compound C1=CC(O)=CC=C1S(=O)(=O)C1=CC=C(O)C=C1 VPWNQTHUCYMVMZ-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- QPQKUYVSJWQSDY-UHFFFAOYSA-N 4-phenyldiazenylaniline Chemical compound C1=CC(N)=CC=C1N=NC1=CC=CC=C1 QPQKUYVSJWQSDY-UHFFFAOYSA-N 0.000 description 1
- TYOXIFXYEIILLY-UHFFFAOYSA-N 5-methyl-2-phenyl-1h-imidazole Chemical compound N1C(C)=CN=C1C1=CC=CC=C1 TYOXIFXYEIILLY-UHFFFAOYSA-N 0.000 description 1
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical class CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- WVDDGKGOMKODPV-UHFFFAOYSA-N Benzyl alcohol Chemical compound OCC1=CC=CC=C1 WVDDGKGOMKODPV-UHFFFAOYSA-N 0.000 description 1
- GIXXQTYGFOHYPT-UHFFFAOYSA-N Bisphenol P Chemical compound C=1C=C(C(C)(C)C=2C=CC(O)=CC=2)C=CC=1C(C)(C)C1=CC=C(O)C=C1 GIXXQTYGFOHYPT-UHFFFAOYSA-N 0.000 description 1
- SDDLEVPIDBLVHC-UHFFFAOYSA-N Bisphenol Z Chemical compound C1=CC(O)=CC=C1C1(C=2C=CC(O)=CC=2)CCCCC1 SDDLEVPIDBLVHC-UHFFFAOYSA-N 0.000 description 1
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229920001651 Cyanoacrylate Polymers 0.000 description 1
- HECLRDQVFMWTQS-UHFFFAOYSA-N Dicyclopentadiene Chemical group C1C2C3CC=CC3C1C=C2 HECLRDQVFMWTQS-UHFFFAOYSA-N 0.000 description 1
- SNRUBQQJIBEYMU-UHFFFAOYSA-N Dodecane Natural products CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 1
- BRLQWZUYTZBJKN-UHFFFAOYSA-N Epichlorohydrin Chemical compound ClCC1CO1 BRLQWZUYTZBJKN-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 229920000103 Expandable microsphere Polymers 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 244000043261 Hevea brasiliensis Species 0.000 description 1
- OWIKHYCFFJSOEH-UHFFFAOYSA-N Isocyanic acid Chemical class N=C=O OWIKHYCFFJSOEH-UHFFFAOYSA-N 0.000 description 1
- 239000004425 Makrolon Substances 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- MWCLLHOVUTZFKS-UHFFFAOYSA-N Methyl cyanoacrylate Chemical compound COC(=O)C(=C)C#N MWCLLHOVUTZFKS-UHFFFAOYSA-N 0.000 description 1
- IGFHQQFPSIBGKE-UHFFFAOYSA-N Nonylphenol Natural products CCCCCCCCCC1=CC=C(O)C=C1 IGFHQQFPSIBGKE-UHFFFAOYSA-N 0.000 description 1
- NYXVMNRGBMOSIY-UHFFFAOYSA-N OCCC=CC(=O)OP(O)(O)=O Chemical compound OCCC=CC(=O)OP(O)(O)=O NYXVMNRGBMOSIY-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- SJEYSFABYSGQBG-UHFFFAOYSA-M Patent blue Chemical compound [Na+].C1=CC(N(CC)CC)=CC=C1C(C=1C(=CC(=CC=1)S([O-])(=O)=O)S([O-])(=O)=O)=C1C=CC(=[N+](CC)CC)C=C1 SJEYSFABYSGQBG-UHFFFAOYSA-M 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 229920001328 Polyvinylidene chloride Polymers 0.000 description 1
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 241000862969 Stella Species 0.000 description 1
- 239000005864 Sulphur Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- ZTWQZJLUUZHJGS-UHFFFAOYSA-N Vat Yellow 4 Chemical compound C12=CC=CC=C2C(=O)C2=CC=C3C4=CC=CC=C4C(=O)C4=C3C2=C1C=C4 ZTWQZJLUUZHJGS-UHFFFAOYSA-N 0.000 description 1
- XTXRWKRVRITETP-UHFFFAOYSA-N Vinyl acetate Chemical compound CC(=O)OC=C XTXRWKRVRITETP-UHFFFAOYSA-N 0.000 description 1
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical class C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 1
- 241000276425 Xiphophorus maculatus Species 0.000 description 1
- 229910009372 YVO4 Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- UUQQGGWZVKUCBD-UHFFFAOYSA-N [4-(hydroxymethyl)-2-phenyl-1h-imidazol-5-yl]methanol Chemical class N1C(CO)=C(CO)N=C1C1=CC=CC=C1 UUQQGGWZVKUCBD-UHFFFAOYSA-N 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical class [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- SMOKVADXFPKCFS-UHFFFAOYSA-M [Cl-].[PH4+].C(C1=CC=CC=C1)[P+](C1=CC=CC=C1)(C1=CC=CC=C1)C1=CC=CC=C1.[Cl-] Chemical compound [Cl-].[PH4+].C(C1=CC=CC=C1)[P+](C1=CC=CC=C1)(C1=CC=CC=C1)C1=CC=CC=C1.[Cl-] SMOKVADXFPKCFS-UHFFFAOYSA-M 0.000 description 1
- YAEGPUILKVFTMK-UHFFFAOYSA-N [O].C=C.C1=CC=CC=C1 Chemical compound [O].C=C.C1=CC=CC=C1 YAEGPUILKVFTMK-UHFFFAOYSA-N 0.000 description 1
- 239000006230 acetylene black Substances 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 239000000980 acid dye Substances 0.000 description 1
- 229920006243 acrylic copolymer Polymers 0.000 description 1
- 239000004676 acrylonitrile butadiene styrene Substances 0.000 description 1
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 125000005907 alkyl ester group Chemical group 0.000 description 1
- 229920002892 amber Polymers 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 229920003180 amino resin Polymers 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 125000005577 anthracene group Chemical group 0.000 description 1
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 1
- 150000004056 anthraquinones Chemical class 0.000 description 1
- LJCFOYOSGPHIOO-UHFFFAOYSA-N antimony pentoxide Chemical compound O=[Sb](=O)O[Sb](=O)=O LJCFOYOSGPHIOO-UHFFFAOYSA-N 0.000 description 1
- 239000010426 asphalt Substances 0.000 description 1
- 125000000751 azo group Chemical group [*]N=N[*] 0.000 description 1
- 150000003851 azoles Chemical class 0.000 description 1
- CNYNTSWTKGOUIL-UHFFFAOYSA-N benzhydryl(phenyl)phosphane Chemical compound C=1C=CC=CC=1PC(C=1C=CC=CC=1)C1=CC=CC=C1 CNYNTSWTKGOUIL-UHFFFAOYSA-N 0.000 description 1
- LTPBRCUWZOMYOC-UHFFFAOYSA-N beryllium oxide Inorganic materials O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 1
- 230000001588 bifunctional effect Effects 0.000 description 1
- 229940049676 bismuth hydroxide Drugs 0.000 description 1
- TZSXPYWRDWEXHG-UHFFFAOYSA-K bismuth;trihydroxide Chemical compound [OH-].[OH-].[OH-].[Bi+3] TZSXPYWRDWEXHG-UHFFFAOYSA-K 0.000 description 1
- ZFVMWEVVKGLCIJ-UHFFFAOYSA-N bisphenol AF Chemical compound C1=CC(O)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(O)C=C1 ZFVMWEVVKGLCIJ-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000012661 block copolymerization Methods 0.000 description 1
- 239000000038 blue colorant Substances 0.000 description 1
- BRXCDHOLJPJLLT-UHFFFAOYSA-N butane-2-sulfonic acid Chemical compound CCC(C)S(O)(=O)=O BRXCDHOLJPJLLT-UHFFFAOYSA-N 0.000 description 1
- 229920005549 butyl rubber Polymers 0.000 description 1
- 229910000019 calcium carbonate Inorganic materials 0.000 description 1
- 238000003490 calendering Methods 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000006231 channel black Substances 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- XRPLBRIHZGVJIC-UHFFFAOYSA-L chembl3182776 Chemical compound [Na+].[Na+].NC1=CC(N)=CC=C1N=NC1=CC=C(C=2C=CC(=CC=2)N=NC=2C(=CC3=CC(=C(N=NC=4C=CC=CC=4)C(O)=C3C=2N)S([O-])(=O)=O)S([O-])(=O)=O)C=C1 XRPLBRIHZGVJIC-UHFFFAOYSA-L 0.000 description 1
- UOALEFQKAOQICC-UHFFFAOYSA-N chloroborane Chemical class ClB UOALEFQKAOQICC-UHFFFAOYSA-N 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Chemical class O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 239000004927 clay Substances 0.000 description 1
- 229910052570 clay Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000007334 copolymerization reaction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 239000011243 crosslinked material Substances 0.000 description 1
- 229960004643 cupric oxide Drugs 0.000 description 1
- 125000002704 decyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- GDVKFRBCXAPAQJ-UHFFFAOYSA-A dialuminum;hexamagnesium;carbonate;hexadecahydroxide Chemical compound [OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Al+3].[Al+3].[O-]C([O-])=O GDVKFRBCXAPAQJ-UHFFFAOYSA-A 0.000 description 1
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 1
- VLWUKSRKUMIQAX-UHFFFAOYSA-N diethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[SiH](OCC)CCCOCC1CO1 VLWUKSRKUMIQAX-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000982 direct dye Substances 0.000 description 1
- 239000000986 disperse dye Substances 0.000 description 1
- SVTDYSXXLJYUTM-UHFFFAOYSA-N disperse red 9 Chemical compound O=C1C2=CC=CC=C2C(=O)C2=C1C=CC=C2NC SVTDYSXXLJYUTM-UHFFFAOYSA-N 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000009820 dry lamination Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- HGVPOWOAHALJHA-UHFFFAOYSA-N ethene;methyl prop-2-enoate Chemical compound C=C.COC(=O)C=C HGVPOWOAHALJHA-UHFFFAOYSA-N 0.000 description 1
- 125000005670 ethenylalkyl group Chemical group 0.000 description 1
- SBRXLTRZCJVAPH-UHFFFAOYSA-N ethyl(trimethoxy)silane Chemical compound CC[Si](OC)(OC)OC SBRXLTRZCJVAPH-UHFFFAOYSA-N 0.000 description 1
- 229920006242 ethylene acrylic acid copolymer Polymers 0.000 description 1
- 239000003925 fat Substances 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 239000004088 foaming agent Substances 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 239000006232 furnace black Substances 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 238000007756 gravure coating Methods 0.000 description 1
- 239000001056 green pigment Substances 0.000 description 1
- 239000010440 gypsum Substances 0.000 description 1
- 229910052602 gypsum Inorganic materials 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 125000003187 heptyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000000623 heterocyclic group Chemical group 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 229940051250 hexylene glycol Drugs 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 239000012943 hotmelt Substances 0.000 description 1
- 229910001701 hydrotalcite Inorganic materials 0.000 description 1
- 229960001545 hydrotalcite Drugs 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000002198 insoluble material Substances 0.000 description 1
- 229920000554 ionomer Polymers 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
- 229920003049 isoprene rubber Polymers 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- 239000006233 lamp black Substances 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000113 methacrylic resin Substances 0.000 description 1
- PNXCIMPCRXOBBZ-UHFFFAOYSA-N methoxy(triphenyl)phosphanium Chemical compound C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(OC)C1=CC=CC=C1 PNXCIMPCRXOBBZ-UHFFFAOYSA-N 0.000 description 1
- HJYKVGWOAOLIKY-UHFFFAOYSA-N methyl 2-methylidenenonanoate Chemical compound CCCCCCCC(=C)C(=O)OC HJYKVGWOAOLIKY-UHFFFAOYSA-N 0.000 description 1
- UNBDCVXGGDKSCP-UHFFFAOYSA-N methyl 2-methylidenetetradecanoate Chemical compound CCCCCCCCCCCCC(=C)C(=O)OC UNBDCVXGGDKSCP-UHFFFAOYSA-N 0.000 description 1
- QRPRIOOKPZSVFN-UHFFFAOYSA-M methyl(triphenyl)phosphanium;chloride Chemical compound [Cl-].C=1C=CC=CC=1[P+](C=1C=CC=CC=1)(C)C1=CC=CC=C1 QRPRIOOKPZSVFN-UHFFFAOYSA-M 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 1
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 1
- VSEAAEQOQBMPQF-UHFFFAOYSA-N morpholin-3-one Chemical compound O=C1COCCN1 VSEAAEQOQBMPQF-UHFFFAOYSA-N 0.000 description 1
- 125000001421 myristyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- OWVWGCVNBQLTDH-UHFFFAOYSA-N n-butyl-n-methylprop-2-enamide Chemical compound CCCCN(C)C(=O)C=C OWVWGCVNBQLTDH-UHFFFAOYSA-N 0.000 description 1
- ZQXSMRAEXCEDJD-UHFFFAOYSA-N n-ethenylformamide Chemical class C=CNC=O ZQXSMRAEXCEDJD-UHFFFAOYSA-N 0.000 description 1
- LFJIAQOELDZMAR-UHFFFAOYSA-N n-methylprop-2-enamide;propane-1-sulfonic acid Chemical compound CNC(=O)C=C.CCCS(O)(=O)=O LFJIAQOELDZMAR-UHFFFAOYSA-N 0.000 description 1
- 125000000740 n-pentyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- KYTZHLUVELPASH-UHFFFAOYSA-N naphthalene-1,2-dicarboxylic acid Chemical compound C1=CC=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 KYTZHLUVELPASH-UHFFFAOYSA-N 0.000 description 1
- 229920003052 natural elastomer Polymers 0.000 description 1
- 229920001194 natural rubber Polymers 0.000 description 1
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 1
- 229940117969 neopentyl glycol Drugs 0.000 description 1
- 150000002825 nitriles Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- LKEDKQWWISEKSW-UHFFFAOYSA-N nonyl 2-methylprop-2-enoate Chemical compound CCCCCCCCCOC(=O)C(C)=C LKEDKQWWISEKSW-UHFFFAOYSA-N 0.000 description 1
- 125000001400 nonyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- SNQQPOLDUKLAAF-UHFFFAOYSA-N nonylphenol Chemical compound CCCCCCCCCC1=CC=CC=C1O SNQQPOLDUKLAAF-UHFFFAOYSA-N 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000012766 organic filler Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 150000002916 oxazoles Chemical class 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- CCDXIADKBDSBJU-UHFFFAOYSA-N phenylmethanetriol Chemical compound OC(O)(O)C1=CC=CC=C1 CCDXIADKBDSBJU-UHFFFAOYSA-N 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 150000003003 phosphines Chemical class 0.000 description 1
- PWGIEBRSWMQVCO-UHFFFAOYSA-N phosphono prop-2-enoate Chemical compound OP(O)(=O)OC(=O)C=C PWGIEBRSWMQVCO-UHFFFAOYSA-N 0.000 description 1
- 150000003017 phosphorus Chemical class 0.000 description 1
- 229920001084 poly(chloroprene) Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- 230000037452 priming Effects 0.000 description 1
- UIIIBRHUICCMAI-UHFFFAOYSA-N prop-2-ene-1-sulfonic acid Chemical compound OS(=O)(=O)CC=C UIIIBRHUICCMAI-UHFFFAOYSA-N 0.000 description 1
- PGFIAEZKVZZXSW-UHFFFAOYSA-N prop-2-enoic acid tetradecane Chemical compound C(C=C)(=O)O.CCCCCCCCCCCCCC PGFIAEZKVZZXSW-UHFFFAOYSA-N 0.000 description 1
- KCXFHTAICRTXLI-UHFFFAOYSA-N propane-1-sulfonic acid Chemical compound CCCS(O)(=O)=O KCXFHTAICRTXLI-UHFFFAOYSA-N 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 125000005581 pyrene group Chemical group 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 239000000985 reactive dye Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 230000003362 replicative effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000007776 silk screen coating Methods 0.000 description 1
- 239000012128 staining reagent Substances 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 125000000383 tetramethylene group Chemical group [H]C([H])([*:1])C([H])([H])C([H])([H])C([H])([H])[*:2] 0.000 description 1
- 239000006234 thermal black Substances 0.000 description 1
- 229920006259 thermoplastic polyimide Polymers 0.000 description 1
- 239000004634 thermosetting polymer Substances 0.000 description 1
- 239000002562 thickening agent Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910000969 tin-silver-copper Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- TUQOTMZNTHZOKS-UHFFFAOYSA-N tributylphosphine Chemical compound CCCCP(CCCC)CCCC TUQOTMZNTHZOKS-UHFFFAOYSA-N 0.000 description 1
- 125000002889 tridecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- QLAGHGSFXJZWKY-UHFFFAOYSA-N triphenylborane;triphenylphosphane Chemical compound C1=CC=CC=C1B(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 QLAGHGSFXJZWKY-UHFFFAOYSA-N 0.000 description 1
- RIOQSEWOXXDEQQ-UHFFFAOYSA-O triphenylphosphanium Chemical compound C1=CC=CC=C1[PH+](C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-O 0.000 description 1
- 125000002948 undecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- 125000001834 xanthenyl group Chemical group C1=CC=CC=2OC3=CC=CC=C3C(C12)* 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68377—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54473—Marks applied to semiconductor devices or parts for use after dicing
- H01L2223/5448—Located on chip prior to dicing and remaining on chip after dicing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
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Abstract
本发明涉及倒装芯片型半导体背面用膜和半导体背面用切割带集成膜。本发明涉及要形成于倒装芯片连接至被粘物上的半导体元件背面上的倒装芯片型半导体背面用膜,其中当所述膜形成于所述半导体元件背面上时,所述膜在其不面向所述半导体元件背面的一个面的表面粗糙度(Ra)在固化前在50nm‑3μm范围内。
Description
本申请是申请日为2011年6月30日、申请号为201110184582.X、发明名称为“倒装芯片型半导体背面用膜和半导体背面用切割带集成膜”的申请的分案申请。
技术领域
本发明涉及倒装芯片型半导体背面用膜和半导体背面用切割带集成膜。所述倒装芯片型半导体背面用膜用于保护半导体元件如半导体芯片的背面并且提高半导体元件的强度。
背景技术
近年来,日益要求半导体器件及其封装的薄型化和小型化。因此,作为半导体器件及其封装,已经广泛地利用其中通过倒装芯片接合将半导体元件如半导体芯片安装(倒装芯片连接)于基板上的倒装芯片型半导体器件。在此类倒装芯片连接中,将半导体芯片以该半导体芯片的电路面与基板的电极形成面相对的形式固定至基板。在此类半导体器件等中,可以存在半导体芯片的背面用保护膜保护以防止半导体芯片损坏等的情况(参见,专利文献1至10)。
专利文献1:JP-A-2008-166451
专利文献2:JP-A-2008-006386
专利文献3:JP-A-2007-261035
专利文献4:JP-A-2007-250970
专利文献5:JP-A-2007-158026
专利文献6:JP-A-2004-221169
专利文献7:JP-A-2004-214288
专利文献8:JP-A-2004-142430
专利文献9:JP-A-2004-072108
专利文献10:JP-A-2004-063551
然而,用保护膜保护半导体芯片背面需要将保护膜粘贴至在切割步骤中获得的半导体芯片的背面的额外步骤。结果,处理步骤的数量增加并且生产成本由此增加。近年来,半导体器件薄型化的趋势通常带来半导体芯片在将其拾取的步骤中被损害的问题。因此,为了提高半导体晶片和半导体芯片的机械强度的目的,需要在拾取步骤前将其补强。
迄今为止,被拾取的半导体芯片不直接安装在被粘物上,而是在一些情况下曾经使用贮存用构件来贮存。作为所述贮存用构件,可使用包括以下的结构:具有电子部件收纳凹部(例如,孔)的基体和用于覆盖所述电子部件收纳凹部的普通覆盖带。
然而,在通过使用贮存用构件贮存已经将上述半导体芯片背面用保护膜粘贴至其的半导体芯片的情况下,所述半导体芯片背面用保护膜和贮存用构件可能通常粘着在一起(彼此粘合)以致具有粘贴至其的半导体芯片背面用保护膜的半导体芯片不能从贮存用构件取出。
发明内容
考虑到前述问题已经作出本发明并且其目的是提供倒装芯片型半导体背面用膜和提供半导体背面用切割带集成膜,所述倒装芯片型半导体背面用膜能够保护半导体元件并且利用其半导体元件能够从贮存用构件容易地取出。
为了解决上述问题,本发明人已经进行了勤勉地研究,结果,已经发现,当半导体背面用膜形成于半导体元件背面上时并且当将所述膜在不面向所述半导体元件背面侧上的面的表面粗糙度(Ra)在固化前控制为落入预定范围内时,则所述膜难以粘着(粘合)至贮存用构件,已经完成本发明。
即,本发明提供了一种要形成于倒装芯片连接至被粘物上的半导体元件背面上的倒装芯片型半导体背面用膜,其中当所述膜形成于半导体元件背面上时,所述膜在其不面向半导体元件背面的一个面的表面粗糙度(Ra)在固化前在50nm-3μm范围内。
当本发明的倒装芯片型半导体背面用膜形成于半导体元件背面上时,其发挥保护倒装芯片连接至被粘物上的半导体元件的功能。根据本发明的倒装芯片型半导体背面用膜,其中当所述膜形成于半导体元件背面上时,所述膜在其不面向半导体元件背面的一个面的表面粗糙度(Ra)在固化前落入50nm-3μm的范围内。因此,当将上述倒装芯片型半导体背面用膜已经粘贴至其的半导体元件贮存在贮存用构件中时,所述形成于所述半导体元件背面上的倒装芯片型半导体背面用膜在其贮存期间防止粘着或粘合至贮存用构件,并且当半导体元件从贮存用构件取出时,其能够容易地取出。此处,所述半导体元件背面是指与其上形成电路的表面相对的表面。
优选地,所述倒装芯片型半导体背面用膜的厚度落入2μm-200μm的范围。当所述厚度为至少2μm时,则能够提高所述膜的机械强度并且所述膜能够确保良好的自支持性(self-sustainability)。另一方面,当所述厚度为至多200μm时,可以将包括倒装芯片连接至被粘物上的半导体元件的半导体器件薄型化。
所述半导体元件的厚度优选落入20μm-300μm的范围。
本发明还提供半导体背面用切割带集成膜,其包括切割带和层压在所述切割带上的上述倒装芯片型半导体背面用膜,其中所述切割带包括基材(base material)和层压在所述基材上的压敏粘合剂层,并且所述倒装芯片型半导体背面用膜层压在所述压敏粘合剂层上。
根据具有如上所述构造的半导体背面用切割带集成膜,将所述切割带和倒装芯片型半导体背面用膜集成,因此该类型的切割带集成膜可以用于切割半导体晶片从而生产半导体元件的切割步骤和随后的拾取步骤。即,当在切割步骤之前将切割带粘贴至半导体晶片背面时,所述半导体背面用膜也可以同时粘合至其,因此,不需要仅将半导体背面用膜粘合至半导体晶片的步骤(半导体背面膜粘合步骤)。结果,可以减少处理步骤的数量。而且,由于半导体背面用膜保护半导体晶片的背面和通过切割形成的半导体元件的背面,所以在切割步骤和随后步骤(例如,拾取步骤)期间可以防止或减少半导体元件的损坏。结果,可以增加要生产的倒装芯片型半导体器件的生产率。
当本发明的倒装芯片型半导体背面用膜形成于所述半导体元件背面上时,其发挥保护倒装芯片连接至被粘物上的半导体元件的功能。当本发明的倒装芯片型半导体背面用膜形成于所述半导体晶片背面上时,所述膜在其不面向所述半导体元件背面的一个面的表面粗糙度(Ra)在固化前在50nm-3μm的范围内。因此,当将上述倒装芯片型半导体背面用膜已经粘贴至其的半导体元件贮存在贮存用构件中时,防止形成于半导体元件背面上的倒装芯片型半导体背面用膜在其贮存期间粘着或粘合至贮存用构件,并且当将半导体元件从贮存用构件取出时,其能够容易地取出。
根据本发明的半导体背面用切割带集成膜,将切割带和倒装芯片型半导体背面用膜集成,因此该类型的切割带集成膜可以用于切割半导体晶片从而生产半导体元件的切割步骤和随后的拾取步骤。因此,不需要仅将半导体背面用膜粘合至半导体晶片的步骤(半导体背面膜粘合步骤)。而且,在随后的切割步骤和拾取步骤中,由于半导体背面用膜粘合至半导体晶片背面和通过切割形成的半导体元件背面,由此可以有效地保护半导体晶片和半导体元件并且可以防止半导体元件被损坏。
附图说明
图1为示出本发明的半导体背面用切割带集成膜的一个实施方案的截面示意图。
图2A-2D为示出使用本发明的半导体背面用切割带集成膜生产半导体器件的方法的一个实施方案的截面示意图。
附图标记说明
1 半导体背面用切割带集成膜
2 半导体背面用膜
3 切割带
31 基材
32 压敏粘合剂层
33 对应于半导体晶片粘合部分的部分
4 半导体晶片
5 半导体芯片
51 在半导体芯片5的电路面侧形成的凸块(bump)
6 被粘物
61 粘合至被粘物6的连接垫(connecting pad)的连结用导电性材料
具体实施方式
参考图1描述本发明的实施方案,但本发明不限于这些实施方案。图1为示出根据本实施方案的半导体背面用切割带集成膜的截面示意图。此外,在本说明书的附图中,未给出不需要描述的部分,并且为了使得描述容易存在通过放大、缩小等示出的部分。
(半导体背面用切割带集成膜)
如图1所示,半导体背面用切割带集成膜1(下文中有时也称作"切割带集成的半导体背面保护膜"、“具有切割带的半导体背面用膜”或“具有切割带的半导体背面保护膜”)具有包括以下的构造:包括在基材31上形成的压敏粘合剂层32的切割带3,和结果形成在压敏粘合剂层32上的倒装芯片型半导体背面用膜2(下文中有时称作"半导体背面用膜"或“半导体背面保护膜”)。同样如图1所示,本发明的半导体背面用切割带集成膜可以如此设计以致半导体背面用膜2仅形成于对应于半导体晶片粘合部分的部分33上;然而,半导体背面用膜可以形成在压敏粘合剂层32的整个表面上,或者半导体背面用膜可以形成在大于对应于半导体晶片粘合部分的部分33但是小于压敏粘合剂层32的整个表面的部分上。此外,在直至将半导体背面用膜2粘贴至晶片背面时,将半导体背面用膜2的表面(要粘贴至晶片背面的表面)用隔离膜等保护。
(倒装芯片型半导体背面用膜)
半导体背面用膜2具有膜形状。半导体背面用膜2在作为产品的半导体背面用切割带集成膜的实施方案中通常处于未固化状态(包括半固化状态)并且在将半导体背面用切割带集成膜粘贴至半导体晶片之后热固化(细节如下所述)。
根据该实施方案的半导体背面用膜2,当所述膜形成于半导体元件背面上时,在其不面向(接触)半导体元件背面的一个面的表面粗糙度(Ra)在固化前落入50nm-3μm的范围。优选地,所述表面粗糙度(Ra)为60nm-2μm,更优选70nm-1μm。由于所述表面粗糙度(Ra)为50nm-3μm,当将上述半导体背面用膜2已经粘贴至其的半导体元件贮存在贮存用构件中时,形成于半导体元件背面上的半导体背面用膜2在其贮存期间防止粘着或粘合至贮存用构件,并且当半导体元件从贮存用构件取出时,其能够容易地取出。
贮存用构件可以为包括具有电子部件收纳凹部(例如,孔)的基材和用于覆盖电子部件收纳凹部的普通覆盖带的任何已知的构件。
优选地,半导体背面用膜2对贮存用构件的粘合力(23℃,剥离角180°,剥离速度300m/秒)为至多0.1N/10mm,更优选至多0.01N/10mm。当粘合力为至多0.1N/10mm时,则更易于从贮存用构件取出半导体元件。
半导体背面用膜可以由树脂组合物例如包含热塑性树脂和热固性树脂的树脂组合物形成。半导体背面用膜可以由不含热固性树脂的热塑性树脂组合物形成或可以由不含热塑性树脂的热固性树脂组合物形成。
热塑性树脂的实例包括天然橡胶、丁基橡胶、异戊二烯橡胶、氯丁橡胶、乙烯-乙酸乙烯酯共聚物、乙烯-丙烯酸共聚物、乙烯-丙烯酸酯共聚物、聚丁二烯树脂、聚碳酸酯树脂、热塑性聚酰亚胺树脂、聚酰胺树脂如6-尼龙和6,6-尼龙、苯氧基树脂、丙烯酸类树脂、饱和聚酯树脂如PET(聚对苯二甲酸乙二酯)或PBT(聚对苯二甲酸丁二醇酯)、聚酰胺酰亚胺树脂或氟树脂。热塑性树脂可以单独使用或以两种以上的组合使用。在这些热塑性树脂中,优选丙烯酸类树脂和苯氧基树脂,并且苯氧基树脂是更优选的,这是因为其能够形成为膜形状同时维持拉伸贮能弹性模量高。
不特别限定,所述苯氧基树脂包括例如具有***其中作为构成单元的酚醛组分的环氧树脂,如通过表氯醇和双酚类化合物(diphenolic compound)(二价酚类化合物)的反应获得的树脂、通过二价环氧化合物和双酚类化合物的反应获得的树脂。所述苯氧基树脂的实例包括具有至少一个选自双酚骨架(例如,双酚A型骨架、双酚F型骨架、双酚A/F混合型骨架、双酚S型骨架、双酚M型骨架、双酚P型骨架、双酚A/P混合型骨架、双酚Z型骨架)、萘骨架、降冰片烯骨架、芴骨架、联苯骨架、蒽骨架、酚醛清漆骨架、芘骨架、呫吨骨架、金刚烷骨架和二环戊二烯骨架的那些苯氧基树脂。作为所述苯氧基树脂,此处可用的是商购产品。这里一种或多种不同类型的苯氧基树脂可以单独使用或作为组合使用。
丙烯酸类树脂没有特别限定,其实例包括包含一种或两种以上的丙烯酸或甲基丙烯酸的酯作为组分的聚合物,其中所述丙烯酸或甲基丙烯酸具有30个以下碳原子、优选4-18个碳原子、更优选6-10个碳原子、特别地8或9个碳原子的直链或支化烷基。即,在本发明中,丙烯酸类树脂具有也包括甲基丙烯酸类树脂的宽泛含义。所述烷基的实例包括甲基、乙基、丙基、异丙基、正丁基、叔丁基、异丁基、戊基、异戊基、己基、庚基、2-乙基己基、辛基、异辛基、壬基、异壬基、癸基、异癸基、十一烷基、十二烷基(月桂基)、十三烷基、十四烷基、硬脂基和十八烷基。
此外,用于形成丙烯酸类树脂的其它单体(除其中烷基为具有30个以下碳原子的烷基的丙烯酸或甲基丙烯酸的烷基酯以外的单体)没有特别限定,其实例包括含羧基单体如丙烯酸、甲基丙烯酸、丙烯酸羧乙酯、丙烯酸羧戊酯、衣康酸、马来酸、富马酸和巴豆酸;酸酐单体如马来酸酐和衣康酸酐;含羟基单体如(甲基)丙烯酸2-羟乙酯、(甲基)丙烯酸2-羟丙酯、(甲基)丙烯酸4-羟丁酯、(甲基)丙烯酸6-羟己酯、(甲基)丙烯酸8-羟辛酯、(甲基)丙烯酸10-羟癸酯、(甲基)丙烯酸12-羟月桂酯和(4-羟甲基环己基)-甲基丙烯酸酯;含磺酸基单体如苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯酰胺基-2-甲基丙磺酸、(甲基)丙烯酰胺基丙磺酸、(甲基)丙烯酸磺丙酯和(甲基)丙烯酰氧基萘磺酸;和含磷酸基团单体如2-羟乙基丙烯酰磷酸酯(2-hydroxyethylacryloyl phosphate)。在这点上,(甲基)丙烯酸是指丙烯酸和/或甲基丙烯酸,(甲基)丙烯酸酯是指丙烯酸酯和/或甲基丙烯酸酯,(甲基)丙烯酰基是指丙烯酰基和/或甲基丙烯酰基,等等,这应用于整个说明书中。
此外,除了环氧树脂和酚醛树脂之外,热固性树脂的实例包括,氨基树脂、不饱和聚酯树脂、聚氨酯树脂、硅酮树脂和热固性聚酰亚胺树脂。这些热固性树脂可以单独使用或以两种以上的组合使用。作为热固性树脂,仅包含少量腐蚀半导体元件的离子性杂质的环氧树脂是合适的。此外,酚醛树脂适合用作环氧树脂的固化剂。
环氧树脂没有特别限定,例如,可使用双官能环氧树脂或多官能环氧树脂如双酚A型环氧树脂、双酚F型环氧树脂、双酚S型环氧树脂、溴化双酚A型环氧树脂、氢化双酚A型环氧树脂、双酚AF型环氧树脂、联苯型环氧树脂、萘型环氧树脂、芴型环氧树脂、苯酚酚醛清漆(phenol novolak)型环氧树脂、邻甲酚酚醛清漆(o-cresol novolak)型环氧树脂、三羟基苯甲烷型环氧树脂和四羟苯基乙烷(tetraphenylolethane)型环氧树脂,或环氧树脂如乙内酰脲型环氧树脂、三缩水甘油基异氰脲酸酯型环氧树脂或缩水甘油基胺型环氧树脂。
作为环氧树脂,在以上示例的那些中,酚醛清漆型环氧树脂、联苯型环氧树脂、三羟基苯甲烷型环氧树脂和四羟苯基乙烷型环氧树脂是优选的。这是因为这些环氧树脂与作为固化剂的酚醛树脂具有高反应性,且耐热性等优良。
此外,上述酚醛树脂起到环氧树脂的固化剂的作用,其实例包括酚醛清漆型酚醛树脂如苯酚酚醛清漆树脂、苯酚芳烷基树脂、甲酚酚醛清漆树脂、叔丁基苯酚酚醛清漆树脂和壬基苯酚酚醛清漆树脂;甲阶型酚醛树脂;和聚氧苯乙烯(polyoxystyrenes)如聚对氧苯乙烯。酚醛树脂可单独或以其两种以上的组合使用。在这些酚醛树脂中,苯酚酚醛清漆树脂和苯酚芳烷基树脂是特别优选的。这是因为可改进半导体器件的连接可靠性。
在本发明中,可以使用用于环氧树脂和酚醛树脂的热固化促进催化剂。该热固化促进催化剂可以适当地选自已知的热固化促进催化剂。这里一种或多种热固化促进催化剂可以单独或作为组合使用。作为热固化促进催化剂,例如,可以使用胺类固化促进催化剂、磷类固化促进催化剂、咪唑类固化促进催化剂、硼类固化促进催化剂或磷-硼类固化促进催化剂。
没有特别限定,胺类固化促进催化剂包括例如一乙醇胺三氟硼酸盐(由StellaChemifa Co.,Ltd.制造)、双氰胺(由Nacalai Tesque Co.,Ltd.制造)。
没有特别限定,磷类固化促进催化剂包括例如三有机膦如三苯基膦、三丁基膦、三(对-甲基苯基)膦、三(壬基苯基)膦、二苯基甲苯基膦;以及四苯基溴化鏻(商品名TPP-PB)、甲基三苯基鏻(商品名TPP-MB)、甲基三苯基氯化鏻(商品名TPP-MC)、甲氧基甲基三苯基鏻(商品名TPP-MOC)、苄基三苯基氯化鏻(商品名TPP-ZC)(均由Hokko Chemical IndustryCo.,Ltd.制造)。优选地,三苯基膦化合物在环氧树脂中基本上不溶解。当在环氧树脂中不溶解时,则它们可以防止过度热固化。具有三苯基膦结构并且在环氧树脂中基本上不溶解的热固化催化剂为,例如,甲基三苯基鏻(商品名TPP-MB)。这里,术语“不溶解”是指包括三苯基膦化合物的热固化催化剂在包括环氧树脂的溶剂中不溶解,更精确地,在落入10-40℃的范围内的温度下所述催化剂不以10重量%以上的量溶解于所述溶剂中。
咪唑类固化促进催化剂包括2-甲基咪唑(商品名2MZ)、2-十一烷基咪唑(商品名C11-Z)、2-十七烷基咪唑(商品名C17Z)、1,2-二甲基咪唑(商品名1,2DMZ)、2-乙基-4-甲基咪唑(商品名2E4MZ)、2-苯基咪唑(商品名2PZ)、2-苯基-4-甲基咪唑(商品名2P4MZ)、l-苄基-2-甲基咪唑(商品名1B2MZ)、l-苄基-2-苯基咪唑(商品名1B2PZ)、l-氰基乙基-2-甲基咪唑(商品名2MZ-CN)、l-氰基乙基-2-十一烷基咪唑(商品名C11Z-CN)、l-氰基乙基-2-苯基咪唑偏苯三酸酯(商品名2PZCNS-PW)、2,4-二氨基-6-[2’-甲基咪唑基-(1’)]-乙基-s-三嗪(商品名2MZ-A)、2,4-二氨基-6-[2’-十一烷基咪唑基-(1’)]-乙基-s-三嗪(商品名C11Z-A)、2,4-二氨基-6-[2’-乙基-4’-甲基咪唑基-(1’)]-乙基-s-三嗪(商品名2E4MZ-A)、2,4-二氨基-6-[2'-甲基咪唑基-(1’)]-乙基-s-三嗪异氰脲酸加合物(商品名2MA-OK)、2-苯基-4,5-二羟基甲基咪唑(商品名2PHZ-PW)、2-苯基-4-甲基-5-羟基甲基咪唑(商品名2P4MHZ-PW)(均由Shikoku Chemical Industry Co.,Ltd.制造)。
没有特别限定,硼类固化促进催化剂包括例如三氯硼烷。
没有特别限定,磷/硼类固化促进催化剂包括例如四苯基鏻四苯基硼酸盐(商品名TPP-K)、四苯基鏻四-对-三硼酸盐(商品名TPP-MK)、苄基三苯基鏻四苯基硼酸盐(商品名TPP-ZK)、三苯基膦三苯基硼烷(商品名TPP-S)(均由Hokko Chemical Industry Co.,Ltd.制造)。
优选地,热固化促进催化剂相对于热固性树脂的总量的比例为1.5重量%-20重量%。然而,在一些情况下,热固化促进催化剂的比例可以小于1.5重量%。在此情况下,热固化促进催化剂的比例的最低限优选至少0.01重量%(更优选至少0.1重量%)。所述比例的最高限优选至多10重量%(更优选至多5重量%)。
优选地,从半导体背面用膜的耐热性的观点,半导体背面用膜由包含丙烯酸类树脂、苯氧基树脂和酚醛树脂的树脂组合物形成。
重要的是半导体背面用膜2具有粘合性。具体地,重要的是半导体背面用膜2本身是粘合剂层。用作粘合剂层的半导体背面用膜2可以由例如在其中包含酚醛树脂作为热固性树脂的树脂组合物形成。优选地,为了将所述膜2预先固化至一定程度,在制备用于半导体背面用膜2的树脂组合物时,在其中添加能够与在聚合物的分子链末端的官能团反应的多官能化合物作为交联剂。据此,可以改进在高温下所述膜2的粘合性能并且可提高其耐热性。
半导体背面用膜对半导体晶片的粘合力(23℃,剥离角180°,剥离速率300mm/分钟)优选至少1N/10mm宽度(例如,1N/10mm宽度-10N/10mm宽度),更优选至少2N/10mm宽度(例如,2N/10mm宽度-10N/10mm宽度),甚至更优选至少4N/10mm宽度(例如,4N/10mm宽度-10N/10mm宽度)。具有落入上述范围的粘合力,所述膜可以以优异粘合性地粘合至半导体晶片和半导体元件并且没有膜溶胀等粘合不良。此外,在切割半导体晶片时,可以防止芯片飞散。例如,如下测量半导体背面用膜对半导体晶片的粘合力:将半导体背面用膜的一个表面用粘贴至其的粘合带(商品名:BT315,由Nitto Denko Co.,Ltd.制造)补强。接下来,根据干式层压方法在50℃下通过用2kg辊往复移动一次按压将具有厚度为0.6mm的半导体晶片粘贴至具有长度为150mm和宽度为10mm的半导体晶片用背面补强膜的表面。其后,将其在热盘(50℃)上静置2分钟,然后将其在室温(约23℃)下静置20分钟。如此静置后,使用剥离试验机(商品名“Autograph AGS-J”,由Shimadzu Seisaku-sho Co.,Ltd.制造),在温度23℃下,在剥离角为180°和拉伸速率为300mm/分钟下,将背面补强的半导体背面用膜剥离。粘合力是从半导体晶片剥离半导体背面用膜时在这两者之间的界面处如此测量的值(N/10mm宽度)。
交联剂没有特别限定,可以使用已知的交联剂。具体地,例如,不仅可提及异氰酸酯类交联剂、环氧类交联剂、三聚氰胺类交联剂和过氧化物类交联剂,还可提及脲类交联剂、金属醇盐类交联剂、金属螯合物类交联剂、金属盐类交联剂、碳二亚胺类交联剂、噁唑啉类交联剂、氮丙啶类交联剂和胺类交联剂等。作为交联剂,异氰酸酯类交联剂或环氧类交联剂是适合的。交联剂可以单独使用或以两种以上的组合使用。
异氰酸酯类交联剂的实例包括低级脂肪族多异氰酸酯例如1,2-亚乙基二异氰酸酯、1,4-亚丁基二异氰酸酯和1,6-六亚甲基二异氰酸酯;脂环族多异氰酸酯例如亚环戊基二异氰酸酯、亚环己基二异氰酸酯、异佛尔酮二异氰酸酯、氢化甲苯二异氰酸酯和氢化苯二甲撑二异氰酸酯;和芳香族多异氰酸酯例如2,4-甲苯二异氰酸酯、2,6-甲苯二异氰酸酯、4,4'-二苯甲烷二异氰酸酯和苯二甲撑二异氰酸酯。另外,也使用三羟甲基丙烷/甲苯二异氰酸酯三聚体加合物[商品名“COLONATE L”,由Nippon Polyurethane Industry Co.,Ltd.制造]、三羟甲基丙烷/六亚甲基二异氰酸酯三聚体加合物[商品名“COLONATE HL”,由NipponPolyurethane Industry Co.,Ltd.制造]等。此外,环氧类交联剂的实例包括N,N,N',N'-四缩水甘油基-间苯二甲胺、二缩水甘油基苯胺、1,3-双(N,N-缩水甘油基氨甲基)环己烷、1,6-己二醇二缩水甘油醚、新戊二醇二缩水甘油醚、乙二醇二缩水甘油醚、丙二醇二缩水甘油醚、聚乙二醇二缩水甘油醚、聚丙二醇二缩水甘油醚、山梨糖醇多缩水甘油醚、甘油多缩水甘油醚、季戊四醇多缩水甘油醚、聚甘油多缩水甘油醚、脱水山梨糖醇多缩水甘油醚、三羟甲基丙烷多缩水甘油醚、己二酸二缩水甘油酯、邻苯二甲酸二缩水甘油酯、三缩水甘油基-三(2-羟乙基)异氰脲酸酯、间苯二酚二缩水甘油醚和双酚-S-二缩水甘油醚,以及在分子中具有两个以上的环氧基团的环氧类树脂。
要使用的交联剂的量没有特别限定,可依赖于交联程度适当选择。具体地,优选要使用的交联剂的量通常为7重量份以下(例如0.05至7重量份),基于100重量份聚合物组分(特别地,在分子链末端具有官能团的聚合物)。当交联剂的量基于100重量份聚合物组分大于7重量份时,粘合力降低,以致该情况是不优选的。从改进内聚力的观点,交联剂的量优选0.05重量份以上,基于100重量份聚合物组分。
在本发明中,代替使用交联剂或与交联剂一起使用,也可以通过用电子束或UV光等照射来进行交联处理。
优选将半导体背面用膜着色。由此,可以显示优异的激光标记性和优异的外观性,并且变得可以使半导体器件具有增值外观性。如上,由于半导体背面用着色膜具有优异的标识性,通过利用各种标识方法如印刷法和激光标识法通过半导体背面用膜可以进行标识以将各种信息如文字信息和图形信息赋予半导体元件或使用半导体元件的半导体器件的非电路侧的面。特别地,通过控制着色的颜色,可以以优异的可见度观察通过标识而赋予的信息(例如,文字信息和图形信息)。另外,当将半导体背面用膜着色时,能够将切割带和半导体背面用膜彼此容易地区分,从而能够提高加工性等。另外,例如,作为半导体器件,可以通过使用不同颜色将其产品分类。在将半导体背面用膜着色的情况下(所述膜既不是无色也不是透明的情况),通过着色显示的颜色没有特别限定,但优选例如深色如黑色、蓝色或红色,并且黑色是特别适合的。
本实施方案中,暗色基本上指具有60以下(0至60),优选50以下(0至50),更优选40以下(0至40)的在L*a*b*颜色空间中定义的L*的暗色。
此外,黑色基本上是指具有35以下(0至35),优选30以下(0至30),更优选25以下(0至25)的在L*a*b*颜色空间中定义的L*的黑色系颜色。在这点上,在黑色中,在L*a*b*颜色空间中定义的各a*和b*可根据L*的值适当选择。例如,a*和b*两者均在优选-10至10,更优选-5至5,进一步优选-3至3(特别地0或约0)的范围内。
在本实施方案中,在L*a*b*颜色空间中定义的L*、a*和b*可通过用色差计(商品名“CR-200”,由Minolta Ltd制造;色差计)测量来确定。L*a*b*颜色空间为在1976年由Commission Internationale de l’Eclairage(CIE)建议的颜色空间,并且指称作CIE1976(L*a*b*)颜色空间的颜色空间。此外,在日本工业标准(Japanese Industrial Standards)JIS Z8729中定义了L*a*b*颜色空间。
在半导体背面用膜着色时,根据目标颜色,可使用着色剂(着色试剂)。作为此类着色剂,可适当使用各种暗色着色剂如黑色着色剂、蓝色着色剂和红色着色剂,黑色着色剂是更适合的。着色剂可为任意颜料和染料。着色剂可单独使用或以两种以上的组合使用。在这点上,作为染料,可以使用任何形式的染料如酸性染料、反应性染料、直接染料、分散染料和阳离子染料。此外,同样关于颜料,其形式不特别限制,可在已知颜料中适当选择和使用。
特别地,当将染料用作着色剂时,染料变得处于在半导体背面用膜中通过溶解均匀或几乎均匀分散的状态,从而可以容易地生产具有均匀或几乎均匀的颜色浓度的半导体背面用膜(结果,半导体背面用切割带集成膜)。因此,当将染料用作着色剂时,半导体背面用切割带集成膜中的半导体背面用膜能够具有均匀或几乎均匀的颜色浓度并能够增强标识性和外观性。
黑色着色剂不特别限制,例如,可适当地选自无机黑色颜料和黑色染料。此外,黑色着色剂可为其中将青色着色剂(蓝-绿着色剂)、品红色着色剂(红-紫着色剂)和黄色着色剂(黄着色剂)混合的着色剂混合物。黑色着色剂可单独或以两种以上的组合使用。当然,黑色着色剂可与除黑色之外其它颜色的着色剂组合使用。
黑色着色剂的具体实例包括炭黑(如炉黑、槽黑、乙炔黑、热裂炭黑或灯黑)、石墨、氧化铜、二氧化锰、偶氮型颜料(例如,偶氮甲碱偶氮黑)、苯胺黑、苝黑、钛黑、花青黑、活性炭、铁素体(如非磁性铁素体或磁性铁素体)、磁铁矿、氧化铬、氧化铁、二硫化钼、铬配合物、复合氧化物型黑色颜料和蒽醌型有机黑色颜料。
本发明中,作为黑色着色剂,可以使用黑色染料如C.I.溶剂黑3、7、22、27、29、34、43、70,C.I.直接黑17、19、22、32、38、51、71,C.I.酸性黑1、2、24、26、31、48、52、107、109、110、119、154,和C.I.分散黑1、3、10、24;和黑色颜料如C.I.颜料黑1、7;等。
作为此类黑色着色剂,例如,商品名“Oil Black BY”、商品名“Oil Black BS”、商品名“Oil Black HBB”、商品名“Oil Black803”、商品名“Oil Black 860”、商品名“OilBlack 5970”、商品名“Oil Black 5906”和商品名“Oil Black 5905”(由Orient ChemicalIndustries Co.,Ltd.制造)等是商购可得的。
除黑色着色剂以外的着色剂的实例包括青色着色剂、品红色着色剂和黄色着色剂。青色着色剂的实例包括青色染料如C.I.溶剂蓝25、36、60、70、93、95;C.I.酸性蓝6和45;青色颜料如C.I.颜料蓝1、2、3、15、15:1、15:2、15:3、15:4、15:5、15:6、16、17、17:1、18、22、25、56、60、63、65、66;C.I.瓮蓝4、60;C.I.颜料绿7。
此外,在品红色着色剂中,品红色染料的实例包括C.I.溶剂红1、3、8、23、24、25、27、30、49、52、58、63、81、82、83、84、100、109、111、121、122;C.I.分散红9;C.I.溶剂紫8、13、14、21、27;C.I.分散紫1;C.I.碱性红1、2、9、12、13、14、15、17、18、22、23、24、27、29、32、34、35、36、37、38、39、40;C.I.碱性紫1、3、7、10、14、15、21、25、26、27和28。
在品红色着色剂中,品红色颜料的实例包括C.I.颜料红1、2、3、4、5、6、7、8、9、10、11、12、13、14、15、16、17、18、19、21、22、23、30、31、32、37、38、39、40、41、42、48:1、48:2、48:3、48:4、49、49:1、50、51、52、52:2、53:1、54、55、56、57:1、58、60、60:1、63、63:1、63:2、64、64:1、67、68、81、83、87、88、89、90、92、101、104、105、106、108、112、114、122、123、139、144、146、147、149、150、151、163、166、168、170、171、172、175、176、177、178、179、184、185、187、190、193、202、206、207、209、219、222、224、238、245;C.I.颜料紫3、9、19、23、31、32、33、36、38、43、50;C.I.瓮红1、2、10、13、15、23、29和35。
此外,黄色着色剂的实例包括黄色染料如C.I.溶剂黄19、44、77、79、81、82、93、98、103、104、112和162;黄色颜料如C.I.颜料橙31、43;C.I.颜料黄1、2、3、4、5、6、7、10、11、12、13、14、15、16、17、23、24、34、35、37、42、53、55、65、73、74、75、81、83、93、94、95、97、98、100、101、104、108、109、110、113、114、116、117、120、128、129、133、138、139、147、150、151、153、154、155、156、167、172、173、180、185、195;C.I.瓮黄1、3和20。
各种着色剂如青色着色剂、品红色着色剂和黄色着色剂可分别单独使用或两种以上的组合使用。在此点上,在使用各种着色剂如青色着色剂、品红色着色剂和黄色着色剂的两种以上的情况下,这些着色剂的混合比(或共混比)没有特别限定,可根据各着色剂的种类和目标颜色等适当选择。
在将半导体背面用膜2着色的情况中,着色的形式没有特别限定。半导体背面用膜可以是例如,添加着色剂的单层膜状制品。另外,所述膜可以是至少层压由至少热固性树脂形成的树脂层和着色剂层的层压膜。在这点上,在半导体背面用膜2是树脂层和着色剂层的层压膜的情况下,以层压形式的半导体背面用膜2具有树脂层/着色剂层/树脂层的层压形式。在此情况下,着色剂层两侧的两个树脂层可以是具有相同组成的树脂层或可以是具有不同组成的树脂层。
根据需要可以向半导体背面用膜2中适当地共混其它添加剂。其它添加剂的实例除了填料、阻燃剂、硅烷偶联剂和离子捕集剂以外,还包括增量剂、防老剂、抗氧化剂和表面活性剂。
填料可为任意无机填料和有机填料,但无机填料是合适的。通过共混填料如无机填料,能够实现赋予半导体背面用膜以导电性、改进导热性、控制弹性模量等。在这点上,半导体背面用膜2可为导电性的或非导电性的。无机填料的实例包括由以下组成的各种无机粉末:二氧化硅,粘土,石膏,碳酸钙,硫酸钡,氧化铝,氧化铍,陶瓷如碳化硅和氮化硅,金属或合金如铝、铜、银、金、镍、铬、铅、锡、锌、钯和焊料,以及碳等。填料可以单独或两种以上组合使用。特别地,填料适合为二氧化硅,更适合为熔凝硅石。无机填料的平均粒径例如可通过激光衍射型粒径分布测量设备来测量。
要引入的填料(特别地,无机填料)的量优选在5重量份至95重量份、更优选7重量份至90重量份、甚至更优选10重量份至90重量份的范围内,相对于100重量份有机树脂组分。当填料的量在5重量份至95重量份的范围内时,则在与半导体背面用膜的面向半导体元件背面的面相对的一侧上,可将半导体背面用膜表面的表面粗糙度(Ra)控制为落入预期范围。
阻燃剂的实例包括三氧化锑、五氧化锑和溴化环氧树脂。阻燃剂可以单独使用或两种以上组合使用。硅烷偶联剂的实例包括β-(3,4-环氧环己基)乙基三甲氧基硅烷、γ-环氧丙氧丙基三甲氧基硅烷和γ-环氧丙氧丙基甲基二乙氧基硅烷。硅烷偶联剂可单独或以两种以上的组合使用。离子捕集剂的实例包括水滑石和氢氧化铋。离子捕集剂可单独或以两种以上的组合使用。
半导体背面用膜2可例如通过利用包括以下步骤的通常使用的方法形成:将热固性树脂如酚醛树脂和如果需要的热塑性树脂例如苯氧基树脂和丙烯酸类树脂和任选的溶剂以及其它添加剂混合以制备树脂组合物,然后将其成形为膜状层。具体地,作为半导体背面用膜的膜状层(粘合剂层)例如能够通过以下方法形成:包括将树脂组合物施涂于切割带的压敏粘合剂层32上的方法;包括将树脂组合物施涂于适当的隔离膜(例如,剥离纸)上以形成树脂层(或粘合剂层),然后将其转移(转换)至压敏粘合剂层32上的方法;等。在这点上,树脂组合物可以是溶液或分散液。
此外,在半导体背面用膜2由包含热固性树脂例如酚醛树脂的树脂组合物形成的情况下,在将所述膜施涂于半导体晶片前的阶段,半导体背面用膜处于热固性树脂未固化或部分固化的状态。在该情况下,在将它施涂至半导体晶片后(具体地,通常,在倒装芯片接合步骤中将包封材料固化时),半导体背面用膜中的热固性树脂完全或几乎完全固化。
如上所述,由于即使当半导体背面用膜包含热固性树脂时,该膜也处于热固性树脂未固化或部分固化的状态,因此半导体背面用膜的凝胶分数没有特别限定,但例如适当地在50重量%以下(0重量%至50重量%)并优选30重量%以下(0重量%至30重量%),特别优选10重量%以下(0重量%至10重量%)的范围内适当选择。半导体背面用膜的凝胶分数可以通过以下测量方法测量。
<凝胶分数测量方法>
从半导体背面用膜2中取样约0.1g样品,并精确称重(样品重量),将样品包裹在网型片(mesh-type sheet)中后,将它在室温下在约50ml甲苯中浸渍1周。此后,从甲苯中取出溶剂不溶性物质(网型片中的内容物),并在130℃下干燥约2小时,将干燥后的溶剂不溶性物质称重(浸渍并干燥后的重量),然后根据下述表达式(a)计算凝胶分数(重量%)。
凝胶分数(重量%)=[(浸渍并干燥后的重量)/(样品重量)]×100(a)
半导体背面用膜的凝胶分数能够通过树脂组分的种类和含量以及交联剂的种类和含量,以及除此之外的加热温度和加热时间等来控制。
本发明中,在半导体背面用膜为由含热固性树脂例如酚醛树脂的树脂组合物形成的膜状制品的情况下,可以有效地显示对半导体晶片的紧密粘合性。
此外,由于在半导体晶片的切割步骤中使用切割水,半导体背面用膜吸湿,从而在一些情况下具有常规状态以上的水含量。当在仍然保持如此高的水含量下进行倒装芯片接合时,水蒸气残留在半导体背面用膜和半导体晶片或其加工主体(半导体)之间的粘合界面处,并有时产生浮起(lifting)。因此,通过将半导体背面用膜构造为在其各表面上设置具有高透水性的芯材料的结构,水蒸气扩散,由此能够避免该问题。从这样的观点,可以将其中半导体背面用膜形成于芯材料的一个表面或两个表面上的多层结构用作半导体背面用膜。芯材料的实例包括膜(例如,聚酰亚胺膜、聚酯膜、聚对苯二甲酸乙二酯膜、聚萘二甲酸乙二酯膜和聚碳酸酯膜等)、用玻璃纤维或塑料无纺纤维增强的树脂基板、硅基板和玻璃基板。
半导体背面用膜2的厚度(在层压膜的情况下的总厚度)不特别限定,但是其可以例如适当地选自约2μm至200μm的范围。另外,厚度优选约4μm至160μm,更优选约6μm至100μm,特别地约10μm至80μm。
半导体背面用膜2在23℃、未固化状态下的拉伸贮能弹性模量优选为1GPa以上(如,1GPa至50GPa),更优选2GPa以上,特别地,3GPa以上是适合的。当拉伸贮能弹性模量为1GPa以上时,在当将半导体芯片与半导体背面用膜2一起从切割带的压敏粘合剂层32剥离后,将半导体背面用膜2放置在支承体上并进行运输等时,能够有效抑制或者防止半导体背面用膜粘贴至支承体。在这点上,支承体是例如在载带中的顶带和底带等。在半导体背面用膜2是由含有热固性树脂的树脂组合物形成的情况下,如前所述,热固性树脂通常处于未固化或部分固化的状态,因此半导体背面用膜在23℃下的拉伸贮能弹性模量通常是在23℃下热固性树脂处于未固化或部分固化状态的拉伸贮能弹性模量。
此处,半导体背面用膜2可以为单层或者层压多层的层压膜,在层压膜的情况下,作为整个层压膜在未固化状态下的拉伸贮能弹性模量充分地为1GPa以上(如,1GPa至50GPa)。此外,处于未固化状态的半导体背面用膜的拉伸贮能弹性模量(23℃)能够通过适当地设定树脂组分(热塑性树脂和/或热固性树脂)的种类和含量或填料如二氧化硅填料的种类和含量来控制。在半导体背面用膜2是层压多层的层压膜的情况下(在半导体背面用膜具有层压层的形式的情况下),作为层压层形式,例如可以示例由晶片粘合层和激光标识层组成的层压形式。另外,在晶片粘合层和激光标识层之间,可以设置其它层(中间层、遮光层、增强层、着色层、基材层、电磁波屏蔽层、导热层、压敏粘合剂层等)。在这点上,晶片粘合层是显示对晶片的优异紧密粘合性(粘合性能)的层并且是与晶片背面接触的层。另一方面,激光标识层是显示优异激光标识性的层并且是在半导体芯片的背面上在激光标识时利用的层。
拉伸贮能弹性模量通过以下方式测定:制备没有层压在切割带3上的处于未固化状态的半导体背面用膜2,并使用由Rheometrics Co.,Ltd.制造的动态粘弹性测量设备"Solid Analyzer RS A2",在预定温度(23℃),氮气气氛下,在样品宽度10mm、样品长度22.5mm、样品厚度0.2mm、频率1Hz和升温速率10℃/分钟的条件下,以拉伸模式测量弹性模量,并将测量的弹性模量作为获得的拉伸贮能弹性模量的值。
优选地,半导体背面用膜2在其至少一个表面上用隔离膜(剥离衬垫)保护(在图中未示出)。例如,在半导体背面用切割带集成膜1中,可将隔离膜设置于半导体背面用膜的至少一个表面上。另一方面,在没有集成切割带的半导体背面用膜中,隔离膜可以设置于半导体背面用膜的一个表面或两个表面上。隔离膜具有作为用于保护半导体背面用膜直至其实际使用的防护材料的功能。此外,在半导体背面用切割带集成膜1中,隔离膜可以进一步用作将半导体背面用膜2转移至切割带基材的压敏粘合剂层32上的支承基材。当半导体晶片粘贴至半导体背面用膜上时将隔离膜剥离。作为隔离膜,还可以使用聚乙烯或聚丙烯膜以及表面涂布有脱模剂如氟类脱模剂或长链烷基丙烯酸酯类脱模剂的塑料膜(例如聚对苯二甲酸乙二酯)或纸等。隔离膜可通过常规已知方法形成。另外,隔离膜的厚度等没有特别限定。
在半导体背面用膜2没有层压切割带3的情况下,半导体背面用膜2可以与在其两侧具有脱模层的一个隔离膜一起卷起成为其中所述膜2用在其两个表面上具有脱模层的隔离膜保护的卷形物(roll)、或所述膜2在其至少一个表面上具有脱模层的隔离膜保护的卷形物。
此外,半导体背面用膜2中可见光的透光率(可见光透光率,波长:400-800nm)没有特别限定,但例如,优选在20%以下(0%-20%)、更优选在10%以下(0%-10%),特别优选5%以下(0%-5%)的范围内。当半导体背面用膜2具有大于20%的可见光透光率时,存在光的透过可能不利地影响半导体元件的顾虑。可见光透光率(%)可以通过半导体背面用膜2的树脂组分的种类和含量,着色剂(如,颜料或染料)的种类和含量以及无机填料的含量等来控制。
半导体背面用膜2的可见光透光率(%)能够如下确定。即,制备本身厚度(平均厚度)为20μm的半导体背面用膜2。接着,将半导体背面用膜2用具有400-800nm波长的可见光以预定强度照射[设备:由Shimadzu Corporation制造的可见光产生设备[商品名"ABSORPTION SPECTRO PHOTOMETER"]],并测量透过的可见光的强度。此外,可以基于穿过半导体背面用膜2的可见光透过前后强度的变化来测定可见光透光率(%)。在这点上,还可以从其厚度不是20μm的半导体背面用膜2的可见光透光率(%;波长:400至800nm)的值得到具有20μm厚度的半导体背面用膜2的可见光透光率(%;波长:400至800nm)。本发明中,虽然在具有20μm厚度的半导体背面用膜2的情况下测定了可见光透光率(%),但是根据本发明的半导体背面用膜不限于具有20μm厚度的膜。
此外,作为半导体背面用膜2,更优选具有较低吸湿度的膜。具体地,吸湿度优选1重量%以下,更优选0.8重量%以下。通过将吸湿度调整至1重量%以下,能够提高激光标识性。此外,例如,在再流步骤(reflow step)中能够抑制或防止半导体背面用膜2和半导体元件之间的空隙的产生。吸湿度是由使半导体背面用膜2在温度85℃和湿度85%RH的气氛下静置168小时前后的重量变化计算的值。在半导体背面用膜2是由含热固性树脂的树脂组合物形成的情况下,吸湿度意指当将热固化后的膜在温度85℃和湿度85%RH的气氛下静置168小时时得到的值。另外,吸湿度能够例如通过改变待添加的无机填料的量来调整。
另外,作为半导体背面用膜2,具有较小比率的挥发物的膜是更优选的。具体地,热处理后半导体背面用膜2的重量降低比率(重量减少率)优选为1重量%以下并更优选0.8重量%以下。用于热处理的条件为加热温度250℃和加热时间1小时。通过调整重量减少率至1重量%以下,可以增强激光标识性。另外,例如在再流步骤中可以抑制或防止倒装芯片型半导体器件中的裂纹的产生。重量减少率可例如通过在无铅焊料再流时添加能够减少裂纹产生的无机物质来调整。在半导体背面用膜2由包含热固性树脂组分的树脂组合物形成的情况下,重量减少率为当将热固化后的半导体背面用膜在温度250℃和加热时间为1小时的条件下加热时获得的值。
(切割带)
切割带3包括基材31和形成于基材31上的压敏粘合剂层32。因而,切割带3具有其中层压基材31和压敏粘合剂层32的构造是足够的。基材(支承基材)能够用作压敏粘合剂层等的支承材料。基材31优选具有放射线透过性。作为基材31,例如,可使用合适的薄材料,例如纸类基材如纸;纤维类基材如织物、无纺布、毡和网;金属类基材如金属箔和金属板;塑料基材如塑料膜和片;橡胶类基材如橡胶片;发泡体(foamed body)如发泡片;及其层压体[特别地,塑料类材料与其它基材的层压体,塑料膜(或片)彼此的层压体等]。在本发明中,作为基材,可适合使用塑料基材如塑料膜和片。此类塑料材料的原料实例包括烯属树脂如聚乙烯(PE)、聚丙烯(PP)和乙烯-丙烯共聚物;使用乙烯作为单体组分的共聚物,如乙烯-乙酸乙烯酯共聚物(EVA)、离聚物树脂、乙烯-(甲基)丙烯酸共聚物,和乙烯-(甲基)丙烯酸酯(无规,交替)共聚物;聚酯如聚对苯二甲酸乙二酯(PET)、聚萘二甲酸乙二酯(PEN)和聚对苯二甲酸丁二醇酯(PBT);丙烯酸类树脂;聚氯乙烯(PVC);聚氨酯;聚碳酸酯;聚苯硫醚(PPS);酰胺类树脂如聚酰胺(尼龙)和全芳族聚酰胺(whole aromatic polyamides)(芳族聚酰胺);聚醚醚酮(PEEK);聚酰亚胺;聚醚酰亚胺;聚偏二氯乙烯;ABS(丙烯腈-丁二烯-苯乙烯共聚物);纤维素类树脂;硅酮树脂;和氟化树脂。
此外,基材31的材料包括聚合物如前述树脂的交联材料。塑料膜可在不拉伸的情况下使用或者需要时可在进行单轴或双轴拉伸处理后使用。根据通过拉伸处理等赋予热收缩性的树脂片,在切割后通过基材31的热收缩减小压敏粘合剂层32和半导体背面用膜2之间的粘合面积,因而能够使半导体芯片的回收容易。
为了提高与邻接层的紧密粘合性、保持性等,可在基材31的表面上实施常规使用的表面处理,例如化学或物理处理如铬酸盐处理、臭氧暴露、火焰暴露、暴露于高压电击或电离辐射处理,或用底漆剂(undercoating agent)(例如稍后提及的压敏粘合剂物质)的涂布处理。
作为基材31,可适当选择和使用相同种类或不同种类的材料,需要时,可将几种材料共混并使用。此外,为了赋予基材31以抗静电能力,可在基材31上形成由金属、合金或其氧化物组成的厚度为约30至500埃的导电性物质的气相沉积层。基材31可为单层或其两层以上的多层。
基材31的厚度(在层压层的情况下为总厚度)没有特别限定,可依赖于强度、挠性及预期的用途等适当选择。例如,厚度通常为1000μm以下(例如1μm至1000μm),优选10μm至500μm,进一步优选20μm至300μm,特别优选约30μm至200μm,但不限于此。
此外,在不损害本发明的优点等的范围内,基材31可包含各种添加剂(着色剂、填料、增塑剂、防老剂、抗氧化剂、表面活性剂、阻燃剂等)。
压敏粘合剂层32由压敏粘合剂形成并具有压敏粘合性。没有具体限定,压敏粘合剂可以适当地选自已知压敏粘合剂。具体地,作为压敏粘合剂,例如具有上述特性的压敏粘合剂可在已知的压敏粘合剂中适当选择并在此处使用,所述已知的压敏粘合剂例如丙烯酸类压敏粘合剂、橡胶类压敏粘合剂、乙烯基烷基醚类压敏粘合剂、硅酮类压敏粘合剂、聚酯类压敏粘合剂、聚酰胺类压敏粘合剂、聚氨酯类压敏粘合剂、氟类压敏粘合剂、苯乙烯-二烯嵌段共聚物类压敏粘合剂,和通过将具有不高于200℃熔点的热熔融性树脂混入上述压敏粘合剂中制备的蠕变特性改进的压敏粘合剂(例如,参见JP-A-56-61468、JP-A-61-174857、JP-A-63-17981、JP-A-56-13040等,将其引入此处以作参考)。作为压敏粘合剂,此处也可使用照射固化性压敏粘合剂(或能量射线固化性压敏粘合剂)和热膨胀性压敏粘合剂。这里一种或多种这样的压敏粘合剂可单独或作为组合使用。
作为压敏粘合剂,此处优选使用的是丙烯酸类压敏粘合剂和橡胶类压敏粘合剂,并且更优选的是丙烯酸类压敏粘合剂。丙烯酸类压敏粘合剂包括含有一种或多种(甲基)丙烯酸烷基酯作为单体组分的丙烯酸类聚合物(均聚物或共聚物)作为基础聚合物的那些。
用于丙烯酸类压敏粘合剂的(甲基)丙烯酸烷基酯包括,例如(甲基)丙烯酸甲酯、(甲基)丙烯酸乙酯、(甲基)丙烯酸丙酯、(甲基)丙烯酸异丙酯、(甲基)丙烯酸丁酯、(甲基)丙烯酸异丁酯、(甲基)丙烯酸仲丁酯、(甲基)丙烯酸叔丁酯、(甲基)丙烯酸戊酯、(甲基)丙烯酸己酯、(甲基)丙烯酸庚酯、(甲基)丙烯酸辛酯、(甲基)丙烯酸2-乙基己酯、(甲基)丙烯酸异辛酯、(甲基)丙烯酸壬酯、(甲基)丙烯酸异壬酯、(甲基)丙烯酸癸酯、(甲基)丙烯酸异癸酯、(甲基)丙烯酸十一烷基酯、(甲基)丙烯酸十二烷基酯、(甲基)丙烯酸十三烷基酯、(甲基)丙烯酸十四烷基酯、(甲基)丙烯酸十五烷基酯、(甲基)丙烯酸十六烷基酯、(甲基)丙烯酸十七烷基酯、(甲基)丙烯酸十八烷基酯、(甲基)丙烯酸十九烷基酯、(甲基)丙烯酸二十烷基酯等。作为(甲基)丙烯酸烷基酯,优选其中烷基具有4至18个碳原子的那些。在(甲基)丙烯酸酯烷基中,烷基可以是直链或支链的。
为了改善内聚力、耐热性及其交联性的目的,如果期望的话,所述丙烯酸类聚合物可包含与上述(甲基)丙烯酸烷基酯可共聚合的任何其它单体组分(可共聚合单体组分)对应的单元。可共聚合单体组分包括例如含羧基单体如(甲基)丙烯酸(丙烯酸、甲基丙烯酸)、丙烯酸羧乙酯、丙烯酸羧戊酯、衣康酸、马来酸、富马酸、巴豆酸;含酸酐基团单体如马来酸酐、衣康酸酐;含羟基单体如(甲基)丙烯酸羟乙酯、(甲基)丙烯酸羟丙酯、(甲基)丙烯酸羟丁酯、(甲基)丙烯酸羟己酯、(甲基)丙烯酸羟辛酯、(甲基)丙烯酸羟癸酯、(甲基)丙烯酸羟月桂酯、(4-羟甲基环己基)甲基甲基丙烯酸酯;含磺酸基的单体例如苯乙烯磺酸、烯丙基磺酸、2-(甲基)丙烯酰胺-2-甲基丙磺酸、(甲基)丙烯酰胺-丙磺酸、(甲基)丙烯酸磺丙酯、(甲基)丙烯酰氧基萘磺酸;含磷酸基团的单体例如2-羟乙基丙烯酰磷酸酯(2-hydroethylacryloyl phosphate);(N-取代)酰胺单体例如(甲基)丙烯酰胺、N,N-二甲基(甲基)丙烯酰胺、N-丁基(甲基)丙烯酰胺、N-羟甲基(甲基)丙烯酰胺、N-羟甲基丙烷(甲基)丙烯酰胺;(甲基)丙烯酸氨基烷基酯单体例如(甲基)丙烯酸氨基乙酯、(甲基)丙烯酸N,N-二甲氨基乙酯、(甲基)丙烯酸叔丁氨基乙酯;(甲基)丙烯酸烷氧基烷基酯单体例如(甲基)丙烯酸甲氧基乙酯、(甲基)丙烯酸乙氧基乙酯;氰基丙烯酸酯单体例如丙烯腈、甲基丙烯腈;含环氧基丙烯酸类单体如(甲基)丙烯酸缩水甘油酯;苯乙烯类单体如苯乙烯、α-甲基苯乙烯;乙烯基酯类单体例如乙酸乙烯酯和丙酸乙烯酯;烯烃类单体如异戊二烯、丁二烯、异丁烯;乙烯基醚类单体例如乙烯基醚;含氮单体如N-乙烯基吡咯烷酮、甲基乙烯基吡咯烷酮、乙烯基吡啶、乙烯基哌啶酮、乙烯基嘧啶、乙烯基哌嗪、乙烯基吡嗪、乙烯基吡咯、乙烯基咪唑、乙烯基噁唑、乙烯基吗啉、N-乙烯基羧酸酰胺、N-乙烯基己内酰胺;马来酰亚胺类单体如N-环己基马来酰亚胺、N-异丙基马来酰亚胺、N-月桂基马来酰亚胺、N-苯基马来酰亚胺;衣康酰亚胺类单体如N-甲基衣康酰亚胺、N-乙基衣康酰亚胺、N-丁基衣康酰亚胺、N-辛基衣康酰亚胺、N-2-乙基己基衣康酰亚胺、N-环己基衣康酰亚胺、N-月桂基衣康酰亚胺;琥珀酰亚胺类单体如N-(甲基)丙烯酰氧亚甲基琥珀酰亚胺、N-(甲基)丙烯酰基-6-氧六亚甲基琥珀酰亚胺、N-(甲基)丙烯酰基-8-氧八亚甲基琥珀酰亚胺;二醇类丙烯酸酯单体如聚乙二醇(甲基)丙烯酸酯、聚丙二醇(甲基)丙烯酸酯、甲氧基乙二醇(甲基)丙烯酸酯(methoxyethylene glycol(meth)acrylate)、甲氧基聚丙二醇(甲基)丙烯酸酯(methoxypolypropylene glycol(meth)acrylate);具有杂环、卤原子或硅原子等的丙烯酸酯类单体,如(甲基)丙烯酸四氢糠酯、含氟(甲基)丙烯酸酯(fluoro(meth)acrylate)和含硅酮(甲基)丙烯酸酯(silicone(meth)acrylate);多官能单体如己二醇二(甲基)丙烯酸酯、(聚)乙二醇二(甲基)丙烯酸酯、(聚)丙二醇二(甲基)丙烯酸酯、新戊二醇二(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、三羟甲基丙烷三(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、二季戊四醇六(甲基)丙烯酸酯、丙烯酸环氧酯、聚酯丙烯酸酯、氨基甲酸酯丙烯酸酯、二乙烯基苯、二(甲基)丙烯酸丁酯、二(甲基)丙烯酸己酯,等等。这里一种或多种这些可共聚合单体组分可单独或作为组合使用。
本发明中可用的照射固化性压敏粘合剂(或能量射线固化性压敏粘合剂)(组合物)包括,例如,含有在聚合物侧链、主链或主链末端中具有自由基反应性碳-碳双键的聚合物作为基础聚合物的内部型照射固化性压敏粘合剂,及通过将UV固化性单体组分或低聚物组分引入压敏粘合剂中制备的照射固化性压敏粘合剂。此处也可以使用的热膨胀性压敏粘合剂包含例如,含有压敏粘合剂和发泡剂(特别地,热膨胀性微球)的那些。
本发明中,在不损害本发明的优点的范围内,压敏粘合剂层32可包含各种添加剂(如,增粘剂、着色剂、增稠剂、增量剂、填料、增塑剂、防老剂、抗氧化剂、表面活性剂、交联剂等)。
交联剂没有特别限定,可以使用已知的交联剂。具体地,作为交联剂,不仅可提及异氰酸酯类交联剂、环氧类交联剂、三聚氰胺类交联剂和过氧化物类交联剂,还可提及脲类交联剂、金属醇盐类交联剂、金属螯合物类交联剂、金属盐类交联剂、碳二亚胺类交联剂、噁唑啉类交联剂、氮丙啶类交联剂和胺类交联剂等,并且异氰酸酯类交联剂和环氧类交联剂是适合的。交联剂可以单独使用或以两种以上的组合使用。此外,待使用的交联剂的量没有特别限定。
异氰酸酯类交联剂的实例包括低级脂肪族多异氰酸酯例如1,2-亚乙基二异氰酸酯、1,4-亚丁基二异氰酸酯和1,6-六亚甲基二异氰酸酯;脂环族多异氰酸酯例如亚环戊基二异氰酸酯、亚环己基二异氰酸酯、异佛尔酮二异氰酸酯、氢化甲苯二异氰酸酯和氢化苯二甲撑二异氰酸酯;和芳香族多异氰酸酯例如2,4-甲苯二异氰酸酯、2,6-甲苯二异氰酸酯、4,4'-二苯甲烷二异氰酸酯和苯二甲撑二异氰酸酯。另外,也使用三羟甲基丙烷/甲苯二异氰酸酯三聚体加合物[商品名“COLONATE L”,由Nippon Polyurethane Industry Co.,Ltd.制造]、三羟甲基丙烷/六亚甲基二异氰酸酯三聚体加合物[商品名“COLONATE HL”,由NipponPolyurethane Industry Co.,Ltd.制造]等。此外,环氧类交联剂的实例包括N,N,N',N'-四缩水甘油基-间苯二甲胺、二缩水甘油基苯胺、1,3-双(N,N-缩水甘油基氨甲基)环己烷、1,6-己二醇二缩水甘油醚、新戊二醇二缩水甘油醚、乙二醇二缩水甘油醚、丙二醇二缩水甘油醚、聚乙二醇二缩水甘油醚、聚丙二醇二缩水甘油醚、山梨糖醇多缩水甘油醚、甘油多缩水甘油醚、季戊四醇多缩水甘油醚、聚甘油多缩水甘油醚、脱水山梨糖醇多缩水甘油醚、三羟甲基丙烷多缩水甘油醚、己二酸二缩水甘油酯、邻苯二甲酸二缩水甘油酯、三缩水甘油基-三(2-羟乙基)异氰脲酸酯、间苯二酚二缩水甘油醚和双酚-S-二缩水甘油醚,以及还有在分子中具有两个以上的环氧基团的环氧类树脂。
在本发明中,代替使用交联剂或与交联剂一起使用,也可以通过用电子束或UV射线照射将压敏粘合剂层交联。
压敏粘合剂层32例如可通过利用包括混合压敏粘合剂和任选的溶剂及其它添加剂,然后将该混合物成形为片状层的通常使用的方法形成。具体地,例如可提及以下方法:包括将包含压敏粘合剂和任选的溶剂及其它添加剂的混合物施涂至基材31上的方法;包括施涂上述混合物至适当的隔离膜(如剥离纸)上以形成压敏粘合剂层32,然后将其转移(转换)至基材31上的方法;等等。
没有特别限定,压敏粘合剂层32的厚度,例如,可以为5μm至300μm(优选5μm至200μm,更优选5μm至100μm,甚至更优选7μm至50μm)左右。当压敏粘合剂层32的厚度落入上述范围内时,则该层能够显示适当的压敏粘合力。压敏粘合剂层32可为单层或多层。
切割带3的压敏粘合剂层32对倒装芯片型半导体背面用膜2的粘合力(23℃,剥离角180度,剥离速率300mm/min)优选在0.02N/20mm至10N/20mm,更优选0.05N/20mm至5N/20mm的范围内。当粘合力为至少0.02N/20mm时,则在切割半导体晶片时可以防止半导体芯片的飞散。另一方面,当粘合力为至多10N/20mm时,则在拾取它们时使半导体芯片的剥离容易,并防止压敏粘合剂残留。
此外,在本发明中,可使倒装芯片型半导体背面用膜2或半导体背面用切割带集成膜1具有抗静电功能。由于该构造,能够防止电路由于在其粘合时和剥离时静电能的产生或由于半导体晶片等通过静电能的带电导致的短路。赋予抗静电功能可通过适当的方式如以下方法进行:添加抗静电剂或导电性物质至基材31、压敏粘合剂层32和半导体背面用膜2的方法,或在基材31上设置由电荷转移配合物(complex)组成的导电层或金属膜等的方法。作为这些方法,优选难以产生具有改变半导体晶片品质风险的杂质离子的方法。为了赋予导电性和改进导热性等的目的要共混的导电性物质(导电性填料)的实例包括银、铝、金、铜、镍或导电性合金等的球形、针形或薄片形金属粉末;金属氧化物如氧化铝;无定形炭黑和石墨。然而,从不具有漏电性的观点,半导体背面用膜2优选是非导电性的。
此外,倒装芯片型半导体背面用膜2或半导体背面用切割带集成膜1可以以卷绕成卷形物(roll)的形式形成或可以以将片材(膜)层压的形式形成。例如,在膜具有卷绕成卷形物的形式的情况下,根据需要,以通过隔离膜保护半导体背面用膜2或半导体背面用膜2和切割带3的层压体的状态将该膜卷绕成卷形物,由此可将膜制备为处于卷绕成卷形物状态或形式的半导体背面用膜2或半导体背面用切割带集成膜1。在这点上,处于卷绕成卷形物状态或形式的半导体背面用切割带集成膜1可由基材31、在基材31的一个表面上形成的压敏粘合剂层32、在压敏粘合剂层32上形成的半导体背面用膜2,和在基材31的另一表面上形成的可剥离处理层(后表面处理层)构成。
此外,半导体背面用切割带集成膜1的厚度(半导体背面用膜的厚度以及包括基材31和压敏粘合剂层32的切割带的厚度的总厚度)可在例如8μm至1,500μm的范围内选择,其优选20μm至850μm,更优选31μm至500μm,特别优选47μm至330μm。
在这点上,在半导体背面用切割带集成膜1中,通过控制半导体背面用膜2的厚度与切割带3的压敏粘合剂层32的厚度的比或半导体背面用膜2的厚度与切割带的厚度(基材31和压敏粘合剂层32的总厚度)的比,能够改进切割步骤时的切割性和拾取步骤时的拾取性等,并且从半导体晶片的切割步骤至半导体芯片的倒装芯片接合步骤均能够有效利用半导体背面用切割带集成膜1。
(半导体背面用切割带集成膜的生产方法)
使用示于图1的半导体背面用切割带集成膜1作为实例而描述根据本实施方案的半导体背面用切割带集成膜的生产方法。首先,基材31可通过常规已知的成膜方法形成。成膜方法的实例包括压延成膜法、在有机溶剂中的流延法(casting method)、在严格密闭体系中的膨胀挤出法、T-模挤出法、共挤出法和在剥离的半导体芯片上的干法层压法。
接着,将压敏粘合剂组合物施涂至基材31上,并在其上干燥(和任选地在加热下交联)以形成压敏粘合剂层32。施涂方法(coating system)包括辊涂、丝网涂布(screencoating)、凹版涂布(gravure coating)等。压敏粘合剂组合物可直接施涂至基材31上,以在基材31上形成压敏粘合剂层32;或可将压敏粘合剂组合物施涂至表面已进行加工以润滑的剥离纸等上以在其上形成压敏粘合剂层32,并可将压敏粘合剂层32转移至基材31上。由此,形成具有在基材31上形成的压敏粘合剂层32的切割带3。
另一方面,将用于形成半导体背面用膜2的形成材料施涂至剥离纸上以形成具有规定的干厚度的涂层,然后在规定条件下干燥(在需要热固化的情况下,任选加热,并干燥)以形成涂层。
在此情况下,剥离纸优选具有表面粗糙度(Ra)为50nm-3μm、更优选60nm-2μm、甚至更优选70nm-1μm。当剥离纸的表面粗糙度(Ra)在50nm-3μm的范围内时,在其面向所述剥离纸侧的涂层(半导体背面用膜2)的表面粗糙度可以为期望的表面粗糙度。
用于形成半导体背面用膜2的形成材料可以施涂至第一剥离纸上,然后可以将第二剥离纸层叠在其上随后干燥从而形成半导体背面用膜2。在此情况下,选择第一剥离纸或第二剥离纸中任一以使其能够使得半导体背面用膜2的表面平滑,并且选择两者中另一个以使其能够使得半导体背面用膜2的表面粗糙度(Ra)落入50nm-3μm的范围。将该涂层(半导体背面用膜2)转移至压敏粘合剂层32上,从而在压敏粘合剂层32上形成半导体背面用膜2。
半导体背面用膜2可依赖于要加入其中的填料的粒径(平均粒径、最大粒径等)和量来调整。关于填料的粒径,重要的是其平均粒径或最大粒径为50nm-3μm,但是即使当所述尺寸大于3μm时,依赖于半导体背面用膜的厚度和填料的量,也可以使得半导体背面用膜2的表面粗糙度(Ra)落入50nm-3μm的范围。具体地,填料的平均粒径优选100nm-2μm,更优选300nm-1μm。填料的最大粒径优选至多5μm,更优选至多4μm,甚至更优选至多3μm(但是重要的是填料的平均粒径落入上述范围)。根据以上所述,可以获得本发明的半导体背面用切割带集成膜1。在形成半导体背面用膜2时需要热固化的情况下,重要的是进行热固化至要成为膜的涂层能够部分固化的程度,但是优选不将涂层热固化。
本发明的半导体背面用切割带集成膜1能够在包括倒装芯片连接步骤的半导体器件生产时适当使用。即,在倒装芯片安装的半导体器件的生产时使用本发明的半导体背面用切割带集成膜1,因此以将半导体背面用切割带集成膜1的半导体背面用膜2粘贴至半导体芯片背面的状态或形式生产倒装芯片安装的半导体器件。因此,可以将本发明的半导体背面用切割带集成膜1用于倒装芯片安装的半导体器件(处于通过倒装芯片接合法将半导体芯片固定于被粘物如基板的状态或形式的半导体器件)。
如在半导体背面用切割带集成膜1中,半导体背面用膜2也可用于倒装芯片安装的半导体器件(处于用倒装芯片接合法将半导体芯片固定至被粘物如基板等的状态或形式的半导体器件)也是有用的。
当将已经将本发明的半导体背面用膜粘贴至其的半导体元件贮存在贮存用构件(例如,覆盖带)中时,防止形成于半导体元件背面上的半导体背面用膜在其贮存期间粘着或粘合至贮存用构件,并且当将半导体元件从贮存用构件取出时,其可以容易地取出。
(半导体晶片)
半导体晶片不特别限制,只要其为已知的或通常使用的半导体晶片即可,并且可在由各种材料制成的半导体晶片中适当地选择和使用。在本发明中,作为半导体晶片,可适当地使用硅晶片。
(半导体器件的生产方法)
将参考图2A至2D描述用于生产根据本发明的半导体器件的方法。图2A至2D为示出在使用半导体背面用切割带集成膜1的情况下生产半导体器件的方法的截面示意图。
根据半导体器件生产方法,半导体器件可使用半导体背面用切割带集成膜1生产。具体地,该方法包括以下步骤:将半导体晶片粘贴至半导体背面用切割集成膜上的步骤,切割半导体晶片的步骤,拾取通过切割获得的半导体元件的步骤,和将半导体元件倒装芯片连接至被粘物上的步骤。
此外,当使用半导体背面用膜2时,半导体器件也可以根据使用半导体背面用切割带集成膜1的半导体器件生产方法来生产。例如,将半导体背面用膜2粘贴至切割带并与切割带集成从而制备半导体背面用切割带集成膜,并且半导体器件可以使用切割带集成膜来生产。在此情况下,使用半导体背面用膜2的半导体器件生产方法包括以下步骤:上述构成使用半导体背面用切割带集成膜的半导体器件生产方法的步骤,并且与其结合,将半导体背面用膜和切割带以半导体背面用膜能够与切割带的压敏粘合剂层接触这样的方式粘贴的附加步骤。
可选择地,半导体背面用膜2可以通过直接粘贴至半导体晶片而不与切割带集成而使用。在此情况下,使用半导体背面用膜2的半导体器件生产方法包括以下步骤:将半导体背面用膜粘贴至半导体晶片的步骤,接着以半导体背面用膜能够与切割带的压敏粘合剂层接触这样的方式将切割带粘贴至具有粘贴至其的半导体晶片的半导体背面用膜的步骤,代替在上述使用半导体背面用切割带集成膜的半导体器件生产方法中的将半导体晶片粘贴至半导体背面用切割带集成膜上的步骤。
在其另一应用实施方案中,可以将半导体背面用膜2直接粘贴至通过将半导体晶片切割成单个的半导体芯片而制备的半导体芯片。在此情况下,使用半导体背面用膜2的半导体器件生产方法包括,例如,至少以下步骤:将切割带粘贴至半导体晶片的步骤,切割半导体晶片的步骤,拾取通过切割获得的半导体元件的步骤,将半导体元件倒装芯片连接至被粘物上的步骤,和将半导体背面用膜粘贴至半导体元件的步骤。
(安装步骤)
首先,如图2A所示,将任选地在半导体背面用切割带集成膜1的半导体背面用膜2上设置的隔离膜适当剥离并将半导体晶片4粘贴至半导体背面用膜2上以通过粘合和保持来固定(安装步骤)。在此情况下,半导体背面用膜2处于未固化状态(包括半固化状态)。此外,将半导体背面用切割带集成膜1粘贴至半导体晶片4的背面。半导体晶片4的背面是指与电路面相对的面(也称为非电路面、非电极形成面等)。粘贴方法不特别限制,但优选通过压接的方法。压接通常在用加压装置如加压辊加压的同时进行。
(切割步骤)
接着,如图2B所示,切割半导体晶片4。从而,将半导体晶片4切断成规定尺寸并个体化(成形为小片),以生产半导体芯片5。例如,所述切割根据常规方法从半导体晶片4的电路面侧进行。此外,本步骤可采取例如形成到达半导体背面用切割带集成膜1的切口(slit)称作完全切断的切断方法。用于本步骤的切割设备没有特别限定,可使用常规已知的设备。此外,由于半导体晶片4通过具有半导体背面用膜的半导体背面切割带集成膜1来粘贴和固定,可以抑制芯片破裂和芯片飞散,以及还可以抑制半导体晶片4的破损。在这点上,当半导体背面用膜2由包含环氧树脂的树脂组合物形成时,即使当将其通过切割切断时,也能够抑制或防止在切断面处产生粘合剂从半导体背面用膜的粘合剂层挤出。结果,可抑制或防止切断面自身的再粘贴(粘连(blocking)),从而可更加方便地进行以下要描述的拾取。
在半导体背面用切割带集成膜1扩展(expand)的情况下,扩展可使用常规已知的扩展设备进行。扩展设备具有能够推动半导体背面用切割带集成膜1向下通过切割环的环形外环,和直径小于外环并支撑半导体背面用切割带集成膜的内环。由于该扩展步骤,可以防止相邻的半导体芯片在以下要描述的拾取步骤中通过彼此接触而损坏。
(拾取步骤)
为了收集粘合并固定至半导体背面用切割带集成膜1的半导体芯片5,如图2C所示进行半导体芯片5的拾取,以将半导体芯片5与半导体背面用膜2一起从切割带3剥离。拾取方法没有特别限定,可采用常规已知的各种方法。例如,可提及包括用针状物从半导体背面用切割带集成膜1的基材31侧向上推动各半导体芯片5,并用拾取设备拾取推起的半导体芯片5的方法。在这点上,拾取的半导体芯片5的背面用半导体背面用膜2保护。
接着,将拾取的半导体芯片5收纳在用于输送它们的贮存用构件中。在贮存用构件中,形成的是沿带状厚板的纵向以预定间隔的电子部件收纳凹部。在将半导体芯片5放置在所述凹部中之后,将构件的上面用覆盖带热封,接着将构件卷绕成卷形物并且输送。
(倒装芯片连接步骤)
在已经输送半导体芯片的位置处,将覆盖带从贮存用构件剥离并且将收纳的半导体芯片5通过空气喷嘴吸附。如图2D所示,将通过空气喷嘴吸附的半导体芯片5根据倒装芯片接合法(倒装芯片安装法)固定于被粘物如基板上。具体地,以半导体芯片5的电路面(也称为表面、电路图案形成面或电极形成面)可以面向被粘物6的方式,根据常规方法将半导体芯片5固定至被粘物6。例如,在将半导体芯片5的电路面侧形成的凸块51压向粘合至被粘物6的连接垫的接合导电性材料(如焊料)61的同时,熔融导电性材料,以确保半导体芯片5和被粘物6之间的电连接,并由此将半导体芯片5固定至被粘物6(倒装芯片接合步骤)。在此情况下,在半导体芯片5和被粘物6之间形成间隙,间隙距离通常为30至300μm左右。在将半导体芯片5倒装芯片接合(倒装芯片连接)至被粘物6之后,重要的是将半导体芯片5和被粘物6的界面以及间隙洗涤,并将两者通过用包封材料(如包封树脂)填充间隙中来密封。
作为被粘物6,可使用各种基板如引线框和电路板(如布线电路板)。基板的材料没有特别限定,可提及陶瓷基板和塑料基板。塑料基板的实例包括环氧基板、双马来酰亚胺三嗪基板和聚酰亚胺基板。
在倒装芯片接合步骤中,凸块的材料和导电性材料不特别限制,其实例包括焊料(合金)如锡-铅类金属材料、锡-银类金属材料、锡-银-铜类金属材料、锡-锌类金属材料和锡-锌-铋类金属材料,及金类金属材料和铜类金属材料。
此外,在倒装芯片接合步骤中,将导电性材料熔融以连接半导体芯片5的电路面侧处的凸块和在被粘物6表面上的导电性材料。导电性材料熔融时的温度通常为约260℃(例如,250℃至300℃)。通过形成具有环氧树脂等的半导体背面用膜,可使本发明的半导体背面用切割带集成膜具有能够承受在倒装芯片接合步骤中的高温的耐热性。
在本步骤中,优选洗涤半导体芯片5和被粘物6之间的相对面(电极形成面)以及间隙。在洗涤时使用的洗涤液没有特别限定,其实例包括有机洗涤液和水性洗涤液。在本发明的半导体背面用切割带集成膜中的半导体背面用膜具有对洗涤液的耐溶剂性,并且对这些洗涤液基本不具有溶解性。因此,如上所述,可采用各种洗涤液作为该洗涤液,并可通过任何常规方法而无需任何特别的洗涤液实现该洗涤。
接着,进行包封步骤以包封倒装芯片接合的半导体芯片5和被粘物6之间的间隙。包封步骤使用包封树脂进行。在此情况下的包封条件不特别限制,但包封树脂的固化通常在175℃下进行60秒至90秒。然而,在本发明中,不限于此,例如,固化可在165至185℃的温度下进行几分钟。由于该步骤,半导体背面用膜2可完全或几乎完全固化并能够以优异的紧密粘合性粘贴至半导体元件的背面。此外,即使当根据本发明的半导体背面用膜2处于未固化状态时,该膜也可在包封步骤时与包封材料一起热固化,因此不需要新添加半导体背面用膜2的热固化步骤。
包封树脂没有特别限定,只要该材料为具有绝缘性的树脂(绝缘树脂)即可,并可在已知包封材料如包封树脂中适当选择和使用。包封树脂优选具有弹性的绝缘树脂。包封树脂的实例包括含环氧树脂的树脂组合物。作为环氧树脂,可提及以上示例的环氧树脂。此外,由包含环氧树脂的树脂组合物组成的包封树脂除了环氧树脂之外还可包含除了环氧树脂之外的热固性树脂(如酚醛树脂)或热塑性树脂。此外,也可利用酚醛树脂作为环氧树脂用固化剂,作为此类酚醛树脂,可提及以上示例的酚醛树脂。
根据使用半导体背面用切割带集成膜1或半导体背面用膜2制造的半导体器件(倒装芯片安装的半导体器件),将半导体背面用膜粘贴至半导体芯片背面,因此,可以以优良的可见度实施激光标识。特别地,即使当标识方法是激光标识法时,激光标识也能够以优良的对比度实施,并可以以良好的可见度观察通过激光标识实施的各种信息(例如文字信息和图形信息)。在激光标识时,可利用已知激光标识设备。此外,作为激光器,可以利用各种激光器如气体激光器、固态激光器和液体激光器。具体地,作为气体激光器,可利用任何已知的气体激光器而没有特别限定,但二氧化碳激光器(CO2激光器)和准分子激光器(ArF激光器、KrF激光器、XeCl激光器、XeF激光器等)是合适的。作为固态激光器,可利用任何已知的固态激光器而没有特别限定,但YAG激光器(如Nd:YAG激光器)和YVO4激光器是合适的。
由于使用本发明的半导体背面用切割带集成膜1或半导体背面用膜2生产的半导体器件为通过倒装芯片安装法安装的半导体器件,该器件与通过模片接合安装法安装的半导体器件相比具有薄型化和小型化的形状。因而,可适当采用半导体器件作为各种电子器件和电子部件或其材料和构件。具体地,作为利用本发明的倒装芯片安装的半导体器件的电子器件,可提及所谓的“移动电话”和“PHS”,小型计算机[例如,所谓的“PDA”(手持终端),所谓的“笔记本尺寸的个人计算机”,所谓的“Net Book(商标)”和所谓的“可穿戴计算机”等],具有“移动电话”和计算机集成形式的小型电子器件,所谓的“Digital Camera(商标)”,所谓的“数码摄像机”,小型电视机,小尺寸游戏机,小型数字音频播放机,所谓的“电子记事本”,所谓的“电子词典”,用于所谓的“电子书”的电子器件终端,移动电子器件(可携带电子器件)如小型数字型手表等。不必说,也可提及除了移动器件之外的电子器件(固定型电子器件等),例如所谓的“桌面个人计算机”、薄型电视机、用于记录和复制的电子器件(硬盘录像机(hard disk recorders)、DVD播放机等)、投影仪和微型机等。此外,电子部件或用于电子器件和电子部件的材料和构件不特别限制,其实例包括用于所谓“CPU”的部件和用于各种记忆器件(所谓的“存储器”、硬盘等)的构件。
实施例
以下将详细地说明性描述本发明的优选实施例。然而,本发明不限于以下实施例,除非其超出本发明的主旨。此外,除非另外说明,在各实施例中的份为重量标准。
实施例1
<倒装芯片型半导体背面用膜的制备>
基于100份丙烯酸类树脂(商品名“SG-708-6”,由Nagase ChemteX Corporation制造),将40份苯氧基树脂(商品名“EP4250”,由JER Co.,Ltd.制造)、129份酚醛树脂(商品名“MEH-8320”,由Meiwa Chemical Co.,Ltd.制造)、663份球形二氧化硅(商品名“SO-25R”,由Admatechs Co.Ltd.制造,具有平均粒径为0.5μm)、14份染料(商品名“OIL BLACK BS”,由Orient Chemical Industries Co.,Ltd.制造)和1份热固化促进催化剂(商品名:“2PHZ-PW”,由Shikoku Chemical Co.,Ltd.制造)溶解于甲乙酮中,以制备具有固体浓度为23.6重量%的粘合剂组合物溶液。
将该粘合剂组合物溶液施涂至作为剥离衬垫(隔离膜)的已进行硅酮剥离处理的由具有厚度50μm的聚对苯二甲酸乙二酯膜组成的可剥离处理膜上,然后在130℃下干燥2分钟,以制备具有厚度(平均厚度)60μm的倒装芯片型半导体背面用膜A。对于采用粘合剂组合物的涂布,使用的是棒涂机。
<半导体背面用切割带集成膜的制备>
使用手动辊,将倒装芯片型半导体背面用膜A粘贴至切割带(商品名"V-8-T",由Nitto Denko Co.,Ltd.制造;基材平均厚度,65μm;压敏粘合剂层的平均厚度,10μm)的压敏粘合剂层上,以制备半导体背面用切割带集成膜A。
实施例2
<倒装芯片型半导体背面用膜的制备>
基于100份丙烯酸类树脂(商品名“SG-708-6”,由Nagase ChemteX Corporation制造),将40份苯氧基树脂(商品名“EP4250”,由JER Co.,Ltd.制造)、129份酚醛树脂(商品名“MEH-8320”,由Meiwa Chemical Co.,Ltd.制造)、1137份球形二氧化硅(商品名“SO-25R”,由Admatechs Co.Ltd.制造,具有平均粒径为0.5μm)、14份染料(商品名“OIL BLACK BS”,由Orient Chemical Industries Co.,Ltd.制造)和1份热固化促进催化剂(商品名:“2PHZ-PW”,由Shikoku Chemical Co.,Ltd.制造)溶解于甲乙酮中,以制备具有固体浓度为23.6重量%的粘合剂组合物溶液。
将该粘合剂组合物溶液施涂至作为剥离衬垫(隔离膜)的已进行硅酮剥离处理的由具有厚度50μm的聚对苯二甲酸乙二酯膜组成的可剥离处理膜上,然后在130℃下干燥2分钟,以制备具有厚度(平均厚度)60μm的倒装芯片型半导体背面用膜B。采用粘合剂组合物的涂布方法与实施例1相同。
<半导体背面用切割带集成膜的制备>
使用手动辊,将倒装芯片型半导体背面用膜B粘贴至切割带(商品名"V-8-T",由Nitto Denko Co.,Ltd.制造;基材平均厚度,65μm;压敏粘合剂层的平均厚度,10μm)的压敏粘合剂层上,以制备半导体背面用切割带集成膜B。
实施例3
<倒装芯片型半导体背面用膜的制备>
基于100份丙烯酸类树脂(商品名“SG-708-6”,由Nagase ChemteX Corporation制造),将40份苯氧基树脂(商品名“EP4250”,由JER Co.,Ltd.制造)、129份酚醛树脂(商品名“MEH-8320”,由Meiwa Chemical Co.,Ltd.制造)、426份球形二氧化硅(商品名“SO-25R”,由Admatechs Co.Ltd.制造,具有平均粒径为0.5μm)、14份染料(商品名“OIL BLACK BS”,由Orient Chemical Industries Co.,Ltd.制造)和1份热固化促进催化剂(商品名:“2PHZ-PW”,由Shikoku Chemical Co.,Ltd.制造)溶解于甲乙酮中,以制备具有固体浓度为23.6重量%的粘合剂组合物溶液。
将该粘合剂组合物溶液施涂至作为剥离衬垫(隔离膜)的已进行硅酮剥离处理的由具有厚度50μm的聚对苯二甲酸乙二酯膜组成的可剥离处理膜上,然后在130℃下干燥2分钟,以制备具有厚度(平均厚度)60μm的倒装芯片型半导体背面用膜C。采用粘合剂组合物的涂布方法与实施例1相同。
<半导体背面用切割带集成膜的制备>
使用手动辊,将倒装芯片型半导体背面用膜C粘贴至切割带(商品名"V-8-T",由Nitto Denko Co.,Ltd.制造;基材平均厚度,65μm;压敏粘合剂层的平均厚度,10μm)的压敏粘合剂层上,以制备半导体背面用切割带集成膜C。
实施例4
<倒装芯片型半导体背面用膜的制备>
基于100份丙烯酸类树脂(商品名“SG-708-6”,由Nagase ChemteX Corporation制造),将40份苯氧基树脂(商品名“EP4250”,由JER Co.,Ltd.制造)、129份酚醛树脂(商品名“MEH-8320”,由Meiwa Chemical Co.,Ltd.制造)、284份球形二氧化硅(商品名“SO-25R”,由Admatechs Co.Ltd.制造,具有平均粒径为0.5μm)、14份染料(商品名“OIL BLACK BS”,由Orient Chemical Industries Co.,Ltd.制造)和1份热固化促进催化剂(商品名:“2PHZ-PW”,由Shikoku Chemical Co.,Ltd.制造)溶解于甲乙酮中,以制备具有固体浓度为23.6重量%的粘合剂组合物溶液。
将该粘合剂组合物溶液施涂至作为剥离衬垫(隔离膜)的已进行硅酮剥离处理的由具有厚度50μm的聚对苯二甲酸乙二酯膜组成的可剥离处理膜上,然后在130℃下干燥2分钟,以制备具有厚度(平均厚度)60μm的倒装芯片型半导体背面用膜D。采用粘合剂组合物的涂布方法与实施例1相同。
<半导体背面用切割带集成膜的制备>
使用手动辊,将倒装芯片型半导体背面用膜D粘贴至切割带(商品名"V-8-T",由Nitto Denko Co.,Ltd.制造;基材平均厚度,65μm;压敏粘合剂层的平均厚度,10μm)的压敏粘合剂层上,以制备半导体背面用切割带集成膜D。
比较例1
<倒装芯片型半导体背面用膜的制备>
基于100份丙烯酸类树脂(商品名“SG-708-6”,由Nagase ChemteX Corporation制造),将40份苯氧基树脂(商品名“EP4250”,由JER Co.,Ltd.制造)、129份酚醛树脂(商品名“MEH-8320”,由Meiwa Chemical Co.,Ltd.制造)、189份球形二氧化硅(商品名“SO-25R”,由Admatechs Co.Ltd.制造,具有平均粒径为0.5μm)、14份染料(商品名“OIL BLACK BS”,由Orient Chemical Industries Co.,Ltd.制造)和1份热固化促进催化剂(商品名:“2PHZ-PW”,由Shikoku Chemical Co.,Ltd.制造)溶解于甲乙酮中,以制备具有固体浓度为23.6重量%的粘合剂组合物溶液。
将该粘合剂组合物溶液施涂至作为剥离衬垫(隔离膜)的已进行硅酮剥离处理的由具有厚度50μm的聚对苯二甲酸乙二酯膜组成的可剥离处理膜上,然后在130℃下干燥2分钟,以制备具有厚度(平均厚度)60μm的倒装芯片型半导体背面用膜E。采用粘合剂组合物的涂布方法与实施例1相同。
<半导体背面用切割带集成膜的制备>
使用手动辊,将倒装芯片型半导体背面用膜E粘贴至切割带(商品名"V-8-T",由Nitto Denko Co.,Ltd.制造;基材平均厚度,65μm;压敏粘合剂层的平均厚度,10μm)的压敏粘合剂层上,以制备半导体背面用切割带集成膜E。
(表面粗糙度的测量)
各倒装芯片型半导体背面用膜A-E的暴露侧(与隔离衬垫相对的侧)的表面粗糙度(Ra)根据JIS B0601采用非接触三维粗糙度仪(WYKO的NT3300)测量。测量条件为50倍能量。得到的数据通过中值滤波器(median filter)处理从而得到预期的粗糙度值。每个倒装芯片型半导体背面用膜在其中不同的5个位置处分析,将数据平均从而得到膜的表面粗糙度(Ra)。结果示于以下表1中。
(对覆盖带的粘合的确认)
首先,将隔离膜从半导体背面用切割带集成膜剥离,在70℃下将半导体晶片(具有直径为8英寸和厚度为200μm的硅镜面晶片)通过辊压接合粘贴在半导体背面用膜上。此外,将半导体晶片以完全切断切割的模式切割从而得到10-mm见方的芯片。粘贴条件和切割条件如下:
(粘贴条件)
粘贴设备:商品名“MA-3000III”,由Nitto Seiki Co.,Ltd.制造
粘贴速度:10mm/min
粘贴压力:0.15MPa
粘贴时的阶段温度:70℃
(切割条件)
切割设备:商品名“DFD-6361”,由DISCO Corporation制造
切割环:“2-8-1”(由DISCO Corporation制造)
切割速度:30mm/sec
切割刀:
Zl;“203O-SE 27HCDD”,由DISCO Corporation制造
Z2;“203O-SE 27HCBB”,由DISCO Corporation制造
切割刀旋转速度:
Zl;40,000r/min
Z2;45,000r/min
切割方法:阶梯切割(step cutting)
晶片芯片尺寸:10.0mm见方
接下来,通过用针状物从半导体背面用切割带集成膜的切割带侧向上推动半导体芯片,将通过切割获得的半导体芯片与倒装芯片型半导体背面用膜一起从压敏粘合剂层拾取。拾取条件如下:
(拾取条件)
拾取设备:商品名“SPA-300”,由Shinkawa Co.,Ltd.制造
拾取针状物的数量:9个针状物
针状物的向上推动速度:20mm/s
针状物的向上推动距离:500μm
拾取时间:1秒
切割带扩展量:3mm
由此拾取,将具有粘贴至其的倒装芯片型半导体背面用膜的半导体芯片以倒装芯片型半导体背面用膜侧能够面向覆盖带这样的方式放在覆盖带(商品名"感压式覆盖带No.2663",由3M制造)上,并且在50℃下干燥4天。随后,将器件保持带翻转,并且将从其中掉出具有粘贴至其的倒装芯片型半导体背面用膜的半导体芯片的样品评价为“良好”,将从其中不掉出半导体芯片的样品评价为“差”。结果示于以下表1中。
表1
(结果)
如从表1可知,当将半导体芯片粘贴至实施例1-4的倒装芯片型半导体背面用膜时,其中在所述膜不面向半导体元件背面侧的面的表面粗糙度(Ra)落入50nm-3μm的范围,所述半导体芯片可以容易地从器件保持带剥离。
虽然已详细地并参考其具体实施方案描述本发明,但对于本领域技术人员,其中可进行各种变化和改进而不背离其范围将显而易见。
本申请基于2010年7月20日提交的日本专利申请2010-163094,在此将其全部内容引入以作参考。
Claims (8)
1.一种倒装芯片型半导体背面用膜,所述倒装芯片型半导体背面用膜要形成于倒装芯片连接至被粘物上的半导体元件背面上,其中当所述膜形成于所述半导体元件背面上时,所述膜在其不面向所述半导体元件背面的一个面的表面粗糙度(Ra)在固化前在50nm-3μm范围内,并且,所述膜含有相对于100重量份有机树脂组分为5-95重量份的无机填料。
2.根据权利要求1所述的倒装芯片型半导体背面用膜,所述倒装芯片型半导体背面用膜具有在2μm-200μm范围内的厚度。
3.根据权利要求1所述的倒装芯片型半导体背面用膜,其中所述半导体元件具有在20μm-300μm范围内的厚度。
4.根据权利要求2所述的倒装芯片型半导体背面用膜,其中所述半导体元件具有在20μm-300μm范围内的厚度。
5.一种半导体背面用切割带集成膜,其包括切割带和层压在所述切割带上的根据权利要求1所述的倒装芯片型半导体背面用膜,
其中所述切割带包括基材和层压在所述基材上的压敏粘合剂层,和所述倒装芯片型半导体背面用膜层压在所述压敏粘合剂层上。
6.根据权利要求5所述的半导体背面用切割带集成膜,其具有在2μm-200μm范围内的厚度。
7.根据权利要求5所述的半导体背面用切割带集成膜,其中所述半导体元件具有在20μm-300μm范围内的厚度。
8.根据权利要求6所述的半导体背面用切割带集成膜,其中所述半导体元件具有在20μm-300μm范围内的厚度。
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CN102376614A (zh) | 2012-03-14 |
CN106057722A (zh) | 2016-10-26 |
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CN102376614B (zh) | 2019-04-16 |
KR101607803B1 (ko) | 2016-03-30 |
JP5048815B2 (ja) | 2012-10-17 |
TW201205660A (en) | 2012-02-01 |
US20120021174A1 (en) | 2012-01-26 |
KR20150010801A (ko) | 2015-01-28 |
TWI446431B (zh) | 2014-07-21 |
KR20120010124A (ko) | 2012-02-02 |
KR20150123762A (ko) | 2015-11-04 |
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KR101640349B1 (ko) | 2016-07-15 |
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