CN107870513B - Negative photoresist, suspension and preparation method of suspension - Google Patents

Negative photoresist, suspension and preparation method of suspension Download PDF

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CN107870513B
CN107870513B CN201711248827.4A CN201711248827A CN107870513B CN 107870513 B CN107870513 B CN 107870513B CN 201711248827 A CN201711248827 A CN 201711248827A CN 107870513 B CN107870513 B CN 107870513B
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coupling agent
silane coupling
negative photoresist
suspension
gamma
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CN107870513A (en
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马骥
黄巍
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Ruihong Suzhou Electronic Chemicals Co ltd
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SUZHOU RUIHONG ELECTRONIC CHEMICAL CO Ltd
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable

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  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)

Abstract

The invention provides a negative photoresist, a suspension and a preparation method of the suspension, wherein the negative photoresist comprises cyclized polyisoprene, a solvent and a photosensitizer; the turbid liquid comprises negative photoresist and glass powder. The negative photoresist or the suspension liquid also comprises a silane coupling agent, and the silane coupling agent is directly added into the negative photoresist or added in the preparation process of the suspension liquid for use. The silane coupling agent is one or more of gamma-aminopropyltriethoxysilane, gamma- (2, 3-epoxypropoxy) propyltrimethoxysilane and gamma- (methacryloyloxy) propyltrimethoxysilane. The negative photoresist and the suspension are suitable for silicon chip corrosion in a GPP diode manufacturing process, and the silane coupling agent simultaneously reacts with the cyclized polyisoprene and the glass powder in the negative photoresist, so that the grinding dispersion efficiency of the glass powder is improved, the settling time of the glass powder is prolonged, the stability of the suspension is improved, the production management requirements are met, and the cost is reduced.

Description

Negative photoresist, suspension and preparation method of suspension
Technical Field
The invention relates to the technical field of photoresist, in particular to negative photoresist, turbid liquid and a preparation method of the turbid liquid.
Background
The passivation material of the diode needs to have good electrical performance and chemical stability, and also needs to meet the requirements of operability and economy. Glass was first developed by the company of us G.E as a passivation and sealing material for the electronics industry in the six and seventies for a-4I1 and a-5 glass passivated diodes. The product is characterized in that a tube core is welded and pickled to obtain a clean PN junction surface, then glass is directly coated on the PN junction surface and is melted and thermoformed according to a temperature curve to form a stable and compact passivation and sealing layer, and the product is good in electrical property and high in reliability. By continuous exploration and improvement, the glass passivation technology is directly applied to chip manufacturing, so that the quality of a chip is greatly improved, and the cost is low. The technology is chip glass passivation, and a new path with low cost and high reliability is created for the passivation of semiconductor devices.
GPP diodes (glass passivation parts) generally refer to all active devices that incorporate or include junction film protection process means, and have small leakage level and good voltage consistency, because the GPP process performs glass passivation immediately after the chip channel is opened to form a dense passivation layer. Moreover, the GPP diode has excellent performances in the aspects of external stress bearing, external cold and hot impactors, high temperature resistance, comprehensive performance, mass production capacity and the like, so that the GPP diode is popular in the market and widely applied to the fields of household appliances, electronic instruments, precision equipment, rail transit, data transmission, communication systems and the like.
GPP diodes are produced by three methods, namely a knife scraping method, an electrophoresis method and a light resistance method, mainly adopted in the current market according to the production process. The photoresist method is a passivation mode combining glass passivation and photoetching technology, is mainly used for high-end devices, has good repeatability, can form a uniform glass passivation layer with good cladding, greatly simplifies the passivation process and can ensure better electrical performance.
In the process of producing GPP diodes by a light resistance method, a ball milling process is required to be adopted to prepare photoresist and glass powder into uniform turbid liquid according to a certain proportion, after the turbid liquid is prepared, the turbid liquid is coated on a silicon chip which is subjected to groove corrosion by utilizing a spin coating method, and a compact and uniform glass passivation layer is formed by the processes of photoetching, developing, sintering and the like. However, the existing photoresist and glass powder have poor compatibility, and can be uniformly mixed only by long-time grinding, and the grinding time is not less than 24 hours in the common process; the density difference between the existing photoresist and the glass powder is large, and the prepared suspension is easy to generate the phenomena of glass powder sedimentation and agglomeration at the bottom during the use period, and influences the thickness of a coating layer and the thickness and protection capability of a sintered glass powder passivation layer, so that the mixed solution must be used within a specified time (generally defined as less than 4 hours), otherwise, raw materials are wasted slightly, and the product yield and reliability are influenced seriously. The existing photoresist and suspension liquid cause higher field management difficulty and increased operation cost for GPP diode manufacturers.
Patent document CN104614939A discloses a negative photoresist composition, which improves the wettability of glass powder and negative photoresist by silane dimer, and prolongs the retention time. However, the adopted additives have no hydrophilic group and no coupling effect, and can not accelerate the dispersion of the glass powder in the initial mixing stage; and the additive dosage is larger, the whole material cost is increased, and the market popularization is not facilitated.
In view of the above, it is desirable to provide a novel negative photoresist, a suspension and a method for preparing the suspension.
Disclosure of Invention
The invention aims to provide a negative photoresist, a suspension and a preparation method of the suspension, which can improve the grinding and dispersing efficiency of glass powder in the suspension, prolong the settling time of the glass powder, improve the stability of the suspension, meet the production management requirements and reduce the cost.
In order to achieve the purpose, the invention provides a negative photoresist which comprises cyclized polyisoprene, a solvent, a photosensitizer and a silane coupling agent, wherein the silane coupling agent is one or more of gamma-aminopropyltriethoxysilane, gamma- (2, 3-epoxypropoxy) propyltrimethoxysilane and gamma- (methacryloyloxy) propyltrimethoxysilane.
As a further improvement of the invention, the content of the silane coupling agent is between 1000ppm and 5000 ppm.
As a further improvement of the invention, the content of the silane coupling agent is 1500ppm to 2000 ppm.
As a further improvement of the invention, the molecular weight of the cyclized polyisoprene is 10-14 ten thousand, and the cyclization ratio is 62-82%; the solvent is a xylene solution; the photosensitizer adopts 2, 6-bis [ (4-azidophenyl) methylene ] -4-methyl-cyclohexanone or 2, 6-bis (4-azidobenzylidene) -4-methyl-cyclopentanone.
The invention also provides a suspension which comprises negative photoresist and glass powder which are mixed with each other, wherein the negative photoresist comprises cyclized polyisoprene, a solvent and a photosensitizer; the suspension also comprises a silane coupling agent, and the silane coupling agent is one or more of gamma-aminopropyltriethoxysilane, gamma- (2, 3-epoxypropoxy) propyltrimethoxysilane and gamma- (methacryloyloxy) propyltrimethoxysilane.
As a further improvement of the invention, the content of the silane coupling agent is between 400ppm and 2000 ppm.
As a further improvement of the invention, the molecular weight of the cyclized polyisoprene is 10-14 ten thousand, and the cyclization ratio is 62-82%; the solvent is a xylene solution; the photosensitizer adopts 2, 6-bis [ (4-azidophenyl) methylene ] -4-methyl-cyclohexanone or 2, 6-bis (4-azidobenzylidene) -4-methyl-cyclopentanone.
The invention also provides a preparation method of the suspension, which comprises the following steps:
providing a negative photoresist which comprises cyclized polyisoprene, a solvent, a photosensitizer and a silane coupling agent, wherein the silane coupling agent is one or more of gamma-aminopropyltriethoxysilane, gamma- (2, 3-epoxypropoxy) propyltrimethoxysilane and gamma- (methacryloyloxy) propyltrimethoxysilane;
providing glass powder;
and providing a ball milling tank and zirconia balls, putting the negative photoresist, the glass powder and the zirconia balls into the ball milling tank for grinding, wherein the grinding time t is set to be 2-12 h.
The present invention also provides another method for preparing the suspension, comprising:
providing a negative photoresist comprising cyclized polyisoprene, a solvent, a photosensitizer;
providing a silane coupling agent, wherein the silane coupling agent is one or more of gamma-aminopropyltriethoxysilane, gamma- (2, 3-epoxypropoxy) propyl trimethoxysilane and gamma- (methacryloyloxy) propyl trimethoxysilane;
providing glass powder;
and providing a ball milling tank and zirconia balls, putting the negative photoresist, the glass powder, the silane coupling agent and the zirconia balls into the ball milling tank for grinding, wherein the grinding time t is set to be 2-12 h.
The invention has the beneficial effects that: the negative photoresist and the suspension are suitable for silicon chip corrosion in a GPP diode manufacturing process, the silane coupling agent has oleophilic groups and hydrophilic groups, and can react with cyclized polyisoprene in the negative photoresist and hydroxyl on the surface of glass powder simultaneously, so that the dispersion of the glass powder can be effectively promoted, and the grinding efficiency is greatly accelerated; and the settling time of the glass powder can be prolonged, the stability of the suspension is improved, the production management requirements are met, and the cost is reduced.
Drawings
FIG. 1 is a schematic view of a test site of a silicon wafer using a negative photoresist or suspension of the present invention;
FIG. 2 is a schematic diagram showing a comparison of the thickness of a coating film of a suspension polished for different times in example 1;
FIG. 3 is a schematic diagram showing a comparison of the thickness of a coating film in the suspension ground for different times in example 2;
FIG. 4 is a schematic diagram showing a comparison of the thickness of a coating film in the suspension ground for different times in example 3;
FIG. 5 is a schematic diagram showing a comparison of the thickness of a coating film in the suspension ground for different times in example 4;
FIG. 6 is a schematic diagram showing a comparison of the thickness of a coating film in the suspension ground for different times in example 5;
FIG. 7 is a schematic diagram showing a comparison of the thickness of a coating film in a suspension polished for different times in example 6;
FIG. 8 is a schematic diagram showing a comparison of the thickness of the coating film with the suspension of example 1 left alone for different periods of time;
FIG. 9 is a schematic diagram showing a comparison of the thickness of the coating film with the suspension of example 2 left for different periods of time;
FIG. 10 is a schematic diagram showing a comparison of the thickness of the coating film with the suspension of example 3 left for different periods of time;
FIG. 11 is a schematic diagram showing a comparison of the thickness of the coating film with the suspension of example 4 left standing for different periods of time;
FIG. 12 is a schematic diagram showing a comparison of the thickness of the coating film with the suspension of example 5 left alone for different periods of time;
FIG. 13 is a schematic diagram showing a comparison of the thickness of the coating film with the suspension of example 6 left alone for different periods of time.
Detailed Description
The present invention will be described in detail below with reference to embodiments shown in the drawings. The present invention is not limited to the embodiment, and structural, methodological, or functional changes made by one of ordinary skill in the art according to the embodiment are included in the scope of the present invention.
The invention provides a negative photoresist which comprises cyclized polyisoprene, a solvent, a photosensitizer and a silane coupling agent. The molecular weight of the cyclized polyisoprene is 10-14 ten thousand, and the cyclization rate is 62-82%; the solvent is a xylene solution; the photosensitizer adopts 2, 6-bis [ (4-azidophenyl) methylene ] -4-methyl-cyclohexanone or 2, 6-bis (4-azidobenzylidene) -4-methyl-cyclopentanone.
The silane coupling agent is one or more of gamma-aminopropyltriethoxysilane, gamma- (2, 3-epoxypropoxy) propyltrimethoxysilane and gamma- (methacryloyloxy) propyltrimethoxysilane. The content of the silane coupling agent is between 1000ppm and 5000 ppm. Preferably, the content of the silane coupling agent is 1500ppm to 2000 ppm.
The invention also provides a suspension which comprises the negative photoresist and the glass powder which are mixed with each other, wherein the negative photoresist comprises cyclized polyisoprene, a solvent and a photosensitizer. The molecular weight of the cyclized polyisoprene is 10-14 ten thousand, and the cyclization rate is 62-82%; the solvent is a xylene solution; the photosensitizer adopts 2, 6-bis [ (4-azidophenyl) methylene ] -4-methyl-cyclohexanone or 2, 6-bis (4-azidobenzylidene) -4-methyl-cyclopentanone.
The suspension also comprises a silane coupling agent, and the silane coupling agent is one or more of gamma-aminopropyltriethoxysilane, gamma- (2, 3-epoxypropoxy) propyltrimethoxysilane and gamma- (methacryloyloxy) propyltrimethoxysilane. The content of the silane coupling agent is between 400ppm and 2000 ppm. In particular, the silane coupling agent may be directly added to the existing negative photoresist as a given component or may be added during the preparation of the suspension.
In the first case, the method of preparing the suspension includes:
providing a negative photoresist which comprises cyclized polyisoprene, a solvent, a photosensitizer and a silane coupling agent, wherein the silane coupling agent is one or more of gamma-aminopropyltriethoxysilane, gamma- (2, 3-epoxypropoxy) propyltrimethoxysilane and gamma- (methacryloyloxy) propyltrimethoxysilane, and the negative photoresist is the negative photoresist directly added with the silane coupling agent;
providing glass powder;
and providing a ball milling tank and zirconia balls, putting the negative photoresist, the glass powder and the zirconia balls into the ball milling tank for grinding, wherein the grinding time t is set to be 2-12 h.
In another case, the method for preparing the suspension includes:
providing a negative photoresist comprising cyclized polyisoprene, a solvent, a photosensitizer;
providing a silane coupling agent, wherein the silane coupling agent is one or more of gamma-aminopropyltriethoxysilane, gamma- (2, 3-epoxypropoxy) propyl trimethoxysilane and gamma- (methacryloyloxy) propyl trimethoxysilane;
providing glass powder;
and providing a ball milling tank and zirconia balls, putting the negative photoresist, the glass powder, the silane coupling agent and the zirconia balls into the ball milling tank for grinding, wherein the grinding time t is set to be 2-12 h.
Wherein the negative photoresist and the glass powder are mixed according to the ratio of 1: mixing the raw materials according to the proportion of 1.5, and ball-milling one or more zirconia balls with different diameters according to actual requirements.
Here, to better illustrate the negative photoresist of the present invention, the influence of the content of the silane coupling agent in the suspension and the polishing time on the coating film thickness and the uniformity of the surface of the photoresist, six groups of suspensions prepared by the above preparation method were used for comparative experiments (examples 1 to 6). Wherein the mass concentrations of the silane coupling agent and the negative photoresist in the suspensions according to examples 1 to 6 are 0, 500ppm, 1000ppm, 1500ppm, 2000ppm, and 3000ppm, respectively; example 1 is a blank reference suspension. Here, the above test uses a 4-inch silicon wafer of the same specification and is spin-coated by the same coating process. Specifically, the spin coating speed is 330 rpm for 15 seconds, and then 880 rpm for 10 seconds; the baking temperature of the hot plate is 110 ℃ for 3 minutes; and testing the thickness distribution from the center to the edge of the silicon wafer by using an SEM (point 1-7 shown in figure 1).
Referring to fig. 2 to 7, the above test results show that the thickness of the silicon wafer coating film tends to decrease as the grinding time increases; on the other hand, with the increase of the adding amount of the silane coupling agent, the grinding time required for the thickness of the silicon wafer coating adhesive film to tend to be uniform is gradually reduced, but the change trend basically disappears after the adding amount of the silane coupling agent is 1500 ppm; when the amount of the silane coupling agent added is 1500ppm, the polishing time for the film thickness to become uniform is less than 4 hours.
Referring to fig. 8 to 13, the test results of the six groups of suspensions after standing for different periods are further compared and examined to obtain the results of the coating film thickness and uniformity of the corresponding suspensions under different retention time conditions. In each of examples 1 to 6, a suspension with a grinding time of 4 hours was selected for the standing time test.
The concentration of the glass powder in the upper liquid part of the suspension corresponding to the embodiment 1 is continuously reduced due to the glass powder sedimentation phenomenon, and the thickness of the coating film is continuously reduced along with the prolonging of the standing and remaining time; the silane coupling agent can delay the process, and the retention time of the corresponding suspension is obviously prolonged along with the increase of the addition amount of the silane coupling agent; when the amount of the silane coupling agent added is 2000ppm under the condition that the change in film thickness is less than 10%, the later extension time is more than 24 hours.
In conclusion, the negative photoresist and the suspension are suitable for silicon chip corrosion in a GPP diode manufacturing process, compared with the prior art, the silane coupling agent has oleophilic groups and hydrophilic groups, can simultaneously react with cyclized polyisoprene in the negative photoresist and hydroxyl on the surface of glass powder, can effectively promote the dispersion of the glass powder, and greatly accelerates the grinding efficiency; and the settling time of the glass powder can be prolonged, the stability of the suspension is improved, the production management requirements are met, and the cost is reduced.
It should be understood that although the present description refers to embodiments, not every embodiment contains only a single technical solution, and such description is for clarity only, and those skilled in the art should make the description as a whole, and the technical solutions in the embodiments can also be combined appropriately to form other embodiments understood by those skilled in the art.
The above-listed detailed description is only a specific description of a possible embodiment of the present invention, and they are not intended to limit the scope of the present invention, and equivalent embodiments or modifications made without departing from the technical spirit of the present invention should be included in the scope of the present invention.

Claims (5)

1. A negative photoresist, comprising: the negative photoresist comprises cyclized polyisoprene, a solvent, a photosensitizer and a silane coupling agent, wherein the molecular weight of the cyclized polyisoprene is 10-14 ten thousand, and the cyclization rate is 62-82%; the solvent is a xylene solution; the photosensitizer adopts 2, 6-bis [ (4-azidophenyl) methylene ] -4-methyl-cyclohexanone or 2, 6-bis (4-azidobenzylidene) -4-methyl-cyclopentanone; the silane coupling agent is one or more of gamma-aminopropyltriethoxysilane, gamma- (2, 3-epoxypropoxy) propyltrimethoxysilane and gamma- (methacryloyloxy) propyltrimethoxysilane, and the content of the silane coupling agent is between 1000ppm and 5000 ppm.
2. A negative photoresist according to claim 1, wherein: the content of the silane coupling agent is 1500ppm to 2000 ppm.
3. A suspension comprises a negative photoresist and glass powder which are mixed with each other, wherein the negative photoresist comprises cyclized polyisoprene, a solvent and a photosensitizer, and the suspension is characterized in that: the molecular weight of the cyclized polyisoprene is 10-14 ten thousand, and the cyclization rate is 62-82%; the solvent is a xylene solution; the photosensitizer adopts 2, 6-bis [ (4-azidophenyl) methylene ] -4-methyl-cyclohexanone or 2, 6-bis (4-azidobenzylidene) -4-methyl-cyclopentanone; the suspension also comprises a silane coupling agent, the silane coupling agent is one or more of gamma-aminopropyltriethoxysilane, gamma- (2, 3-epoxypropoxy) propyltrimethoxysilane and gamma- (methacryloyloxy) propyltrimethoxysilane, and the content of the silane coupling agent is between 400ppm and 2000 ppm.
4. A method of preparing a suspension according to claim 3, comprising:
providing a negative photoresist which comprises cyclized polyisoprene, a solvent, a photosensitizer and a silane coupling agent, wherein the silane coupling agent is one or more of gamma-aminopropyltriethoxysilane, gamma- (2, 3-epoxypropoxy) propyltrimethoxysilane and gamma- (methacryloyloxy) propyltrimethoxysilane;
providing glass powder;
and providing a ball milling tank and zirconia balls, putting the negative photoresist, the glass powder and the zirconia balls into the ball milling tank for grinding, wherein the grinding time t is set to be 2-12 h.
5. A method of preparing a suspension according to claim 3, comprising:
providing a negative photoresist comprising cyclized polyisoprene, a solvent, a photosensitizer;
providing a silane coupling agent, wherein the silane coupling agent is one or more of gamma-aminopropyltriethoxysilane, gamma- (2, 3-epoxypropoxy) propyl trimethoxysilane and gamma- (methacryloyloxy) propyl trimethoxysilane;
providing glass powder;
and providing a ball milling tank and zirconia balls, putting the negative photoresist, the glass powder, the silane coupling agent and the zirconia balls into the ball milling tank for grinding, wherein the grinding time t is set to be 2-12 h.
CN201711248827.4A 2017-12-01 2017-12-01 Negative photoresist, suspension and preparation method of suspension Active CN107870513B (en)

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CN110824843B (en) * 2019-10-30 2023-05-02 苏州瑞红电子化学品有限公司 Negative photoresist composition with high coating uniformity for mesa device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101174089A (en) * 2006-10-17 2008-05-07 Jsr株式会社 Radiation sensitive resin composition for forming space body, space body and its forming method
CN101571672A (en) * 2008-04-30 2009-11-04 东进世美肯株式会社 Negative light-sensitive resin combination
CN102482451A (en) * 2009-06-02 2012-05-30 罗地亚管理公司 Use of a specific functionalised organosilicon compound as a coupling agent in an isoprene elastomer composition including a reinforcing inorganic filler
CN104614939A (en) * 2015-01-09 2015-05-13 苏州瑞红电子化学品有限公司 Negative photoresist composition for being mixed with glass powder in GPP process
CN105467764A (en) * 2015-12-23 2016-04-06 苏州瑞红电子化学品有限公司 Process for improving negative photoresist storage stability of cyclized isoprene system

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101174089A (en) * 2006-10-17 2008-05-07 Jsr株式会社 Radiation sensitive resin composition for forming space body, space body and its forming method
CN101571672A (en) * 2008-04-30 2009-11-04 东进世美肯株式会社 Negative light-sensitive resin combination
CN102482451A (en) * 2009-06-02 2012-05-30 罗地亚管理公司 Use of a specific functionalised organosilicon compound as a coupling agent in an isoprene elastomer composition including a reinforcing inorganic filler
CN104614939A (en) * 2015-01-09 2015-05-13 苏州瑞红电子化学品有限公司 Negative photoresist composition for being mixed with glass powder in GPP process
CN105467764A (en) * 2015-12-23 2016-04-06 苏州瑞红电子化学品有限公司 Process for improving negative photoresist storage stability of cyclized isoprene system

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