CN107863443A - A kind of flexible transconfiguration perovskite solar cell and preparation method thereof - Google Patents
A kind of flexible transconfiguration perovskite solar cell and preparation method thereof Download PDFInfo
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- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
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- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
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Abstract
The invention belongs to perovskite solar cell correlative technology field, and it discloses a kind of preparation method of flexible transconfiguration perovskite solar cell, this method comprises the following steps：(1) CuPc is deposited on flexible conducting substrate after cleaning to form hole transmission layer by thermal evaporation method；(2) spin coating liquid is spin-coated on the surface of the hole transmission layer using anti-solvent method, and the flexible conducting substrate is heated, thus obtain perovskite light absorbing layer；(3) fullerene derivate solution is spun on the perovskite light absorbing layer to form electron transfer layer；Evaporation coating method shape paired electrode on the electron transport layer is used again, thus obtains flexible transconfiguration perovskite solar cell.The invention further relates to flexible transconfiguration perovskite solar cell.Present invention reduces preparation temperature and cost is prepared, improves battery performance, flexibility is higher.
Description
Technical field
The invention belongs to perovskite solar cell correlative technology field, more particularly, to a kind of flexible transconfiguration
Perovskite solar cell and preparation method thereof.
Background technology
With the sustainable growth of our times industrial expansion and population, global energy requirements also increase sharply therewith, especially
Increasingly increase for the demand of the non-renewable resources such as oil, coal, natural gas.Due to the mankind's excessively opening to fossil energy
Adopt utilization, such energy reserve is already close to exhausting edge.At the same time, with the continuous consumption of fossil energy, a large amount of pollutions
Thing is discharged into nature, and caused environmental problem is increasingly severe.Therefore, the related development of renewable and clean energy resource utilizes
Have been to be concerned by more and more people.In recent years, solar cell is as a kind of energy conversion devices of renewable and clean energy resource,
Through gradually being approved.
Perovskite is as a kind of new light-sensitive material, due to cost is low, preparation is simple, photo absorption performance is excellent and electronics
The series of advantages such as mobility height, more and more extensive concern has been received since 2009.Between past 8 years, with
New material and new construction introduce application, and the certification photoelectric current conversion efficiency of perovskite solar cell is constantly lifted, and increase from 3.8%
22.1% is grown to, its efficiency is tentatively suitable with commercialized silicon solar cell.
This year, miniaturization, the flexibility development of photoelectric device have become future trend, and what is emerged therewith is various new
Type is wearable, Collapsible mobile smart machine, such as Intelligent bracelet, intelligent watch, bone glasses etc., new wearable electronic
The prosperity of product has requirements at the higher level to device architecture and energy storage and collection mode, and flexible electronic paper, flexible electronic are shown
The appearance of the products such as screen, Scroll rechargeable solar battery power supply is so that applying in conceptual foundation for flexible portable photovoltaic energy
Upper further development.However, existing mesoporous type perovskite solar cell is using metal oxide as functional layer, preparation process
It is related to high-temperature technology, flexible preparation can not be realized, limits the integrated and development of flexible electronic device.
The content of the invention
For the disadvantages described above or Improvement requirement of prior art, the invention provides a kind of flexible transconfiguration perovskite too
Positive energy battery and preparation method thereof, its preparation characteristic based on existing flexible electronic device, studies and devises a kind of low temperature system
Standby flexible transconfiguration perovskite solar cell and preparation method thereof.The flexible transconfiguration perovskite solar cell
Preparation method replace conventional oxidation nickel (NiO by using CuPcx) hole transport as transconfiguration solar cell
Layer, hole transmission layer preparation temperature is reduced to room temperature by 500 DEG C, and hole transmission layer evaporation coating method is given birth to available for large area
Production, has good industrialization prospect.In addition, light absorbing layer is prepared by using anti-solvent, with traditional two-step method perovskite
Layer preparation method is compared, and the light absorbing layer of preparation has more excellent flatness, and improves crystal grain diameter, has been passivated local defect,
Improve battery performance.
To achieve the above object, according to one aspect of the present invention, there is provided a kind of flexible transconfiguration perovskite sun
The preparation method of energy battery, this method comprise the following steps：
(1) flexible conducting substrate is provided, by the compliant conductive of the CuPc by thermal evaporation method evaporation after cleaning
To form hole transmission layer in substrate, wherein, the flexible conducting substrate is to be coated with indium tin oxide transparent conductive semiconductor film
Flexible PEN film or pet film；
(2) spin coating liquid is spin-coated on the surface of the hole transmission layer using anti-solvent method, and to the compliant conductive
Substrate is heated, and thus obtains perovskite light absorbing layer；
(3) fullerene derivate solution is spun on the perovskite light absorbing layer to form electron transfer layer；Adopt again
With evaporation coating method shape paired electrode on the electron transport layer, flexible transconfiguration perovskite solar cell is thus obtained.
Further, the thermal evaporation deposition speed in step (1) is not higher thanHeating-up temperature in step (2) is 90
DEG C~130 DEG C, the heat time is 5min~60min.
Further, the spin coating liquid is chemical formula ABX3The compound of type, wherein, X F, Cl, Br or I, B be Pb or
Sn, A Cs+、CH3NH3 +、HC(NH2)2 +、CH3CH2NH3 +Or CH3CH2CH2NH3 +。
Further, the spin speed in step (2) is 4000rpm~6000rpm, and spin-coating time is 20s~40s.
Further, 5s~30s in anti-solvent method spin coating process after spin speed reaches setting speed, described
It is added dropwise on hole transmission layer with the immiscible polar organic solvent of perovskite material as anti-solvent.
To achieve the above object, according to another aspect of the present invention, there is provided a kind of flexible transconfiguration perovskite is too
Positive energy battery, the flexible transconfiguration perovskite solar cell include flexible conducting substrate, formed in the compliant conductive
Hole transmission layer in substrate, form perovskite light absorbing layer on the hole transport layer, formed in the perovskite light
Electron transfer layer on absorbed layer and formed on the electron transport layer to electrode；The flexible conducting substrate is to be coated with indium
Flexible the PEN film or polyethylene terephthalate of tin oxide semiconductor nesa coating are thin
Film.
Further, the flexible conducting substrate includes flexible substrates and forms the conductive layer in the flexible substrates,
The conductive layer is ITO conductive membrane layers.
Further, the hole transmission layer is made of CuPc；The electron transfer layer is derived by fullerene
Made of thing；Described is made of silver, aluminium or gold to electrode.
Further, the thickness of the hole transmission layer is 10nm~80nm.
Further, the thickness of the perovskite light absorbing layer is 400nm~600nm, the thickness of the electron transfer layer
For 10nm~50nm；The thickness to electrode is 70nm~140nm.
In general, by the contemplated above technical scheme of the present invention compared with prior art, it is provided by the invention soft
The major technique effect that property transconfiguration perovskite solar cell and preparation method thereof has is as follows：
1. the heating-up temperature in step (2) is 90 DEG C~130 DEG C, preparation temperature is reduced, realizes the low of flexible device
It is prepared by temperature；
2. there is higher stability and heat-resisting quantity, highest is born as substrate by using flexible PET/PEN films
For temperature up to 200 DEG C, wherein PET tolerable temperatures are 130 DEG C, cheapness due to its material, significantly reduce device cost；
3. replace conventional oxidation nickel (NiO by using CuPcx) hole transport as transconfiguration solar cell
Layer, hole transmission layer preparation temperature is reduced to room temperature by 500 DEG C, and hole transmission layer evaporation coating method is given birth to available for large area
Production, has good industrialization prospect；
4. preparing light absorbing layer by using anti-solvent, compared with traditional two-step method calcium titanium ore bed preparation method, prepare
Light absorbing layer there is more excellent flatness, and improve crystal grain diameter, be passivated local defect, improved battery performance.
Brief description of the drawings
Fig. 1 is the preparation method for the flexible transconfiguration perovskite solar cell that better embodiment of the present invention provides
Schematic flow sheet；
Fig. 2 be use Fig. 1 in flexible transconfiguration perovskite solar cell preparation method prepare it is flexible trans
The structural representation of structure perovskite solar cell；
Fig. 3 is the sectional view of the flexible transconfiguration perovskite solar cell in Fig. 2.
In all of the figs, identical reference is used for representing identical element or structure, wherein：1- is to electrode, 2-
Electron transfer layer, 3- perovskite light absorbing layers, 4- hole transmission layers, 5- conductive layers, 6- flexible substrates.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, it is right below in conjunction with drawings and Examples
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.As long as in addition, technical characteristic involved in each embodiment of invention described below
Conflict can is not formed each other to be mutually combined.
Refer to Fig. 1, Fig. 2 and Fig. 3, the flexible transconfiguration perovskite solar-electricity that better embodiment of the present invention provides
The preparation method in pond, it replaces hole transport of the conventional oxidation nickel as transconfiguration solar cell by using CuPc
Layer, is reduced to room temperature, and hole transmission layer evaporation coating method can be used for big face by the preparation temperature of hole transmission layer by 500 DEG C
Product production, has preferable industrialization prospect.
The preparation method of described flexible transconfiguration perovskite solar cell mainly includes the following steps that：
Step 1, there is provided flexible conducting substrate, by the flexibility of the CuPc by thermal evaporation method evaporation after cleaning
To form hole transmission layer in conductive substrates.Specifically, the thickness of the hole transmission layer is 10nm~80nm, thermal evaporation deposition
Speed is not higher thanThe flexible conducting substrate is the flexibility for being coated with ITO (indium tin oxide semiconductor) nesa coating
PEN (PEN) films or PET (polyethylene terephthalate) film.
Step 2, spin coating liquid is spin-coated on the surface of the hole transmission layer using anti-solvent method, and to the flexibility
Conductive substrates are heated, and thus obtain perovskite light absorbing layer.Specifically, the thickness of the perovskite light absorbing layer is
400nm~600nm, the solvent of the spin coating liquid mix molten for DMF (DMF) with DMSO (dimethyl sulfoxide (DMSO))
Agent, its molar concentration are 1molL-1~1.3molL-1, DMF and DMSO volume ratios are preferably 4:1 or 5:1.The spin coating liquid
For chemical formula ABX3The compound of type, wherein, X F, Cl, Br or I, B are Pb or Sn, A Cs+、CH3NH3 +、HC(NH2)2 +、
CH3CH2NH3 +Or CH3CH2CH2NH3 +, spin speed is 4000rpm~6000rpm, and spin-coating time is 20s~40s.Heating-up temperature
For 90 DEG C~130 DEG C, the heat time is 5min~60min.
In present embodiment, 5s~30s in anti-solvent method spin coating process after spin speed reaches setting speed,
It is added dropwise on the hole transmission layer with the immiscible polar organic solvent of perovskite material as anti-solvent, anti-solvent is preferably first
Benzene, chlorobenzene, ether, ethyl acetate, isopropanol etc..
Before the perovskite light absorbing layer spin coating process, in order to improve the surface wettability of the hole transmission layer,
Can optionally it be surface-treated, preferably PEI (polyethyleneimine) surface treatments, UV ozone processing or plasma
Processing.
Step 3, fullerene derivate solution is spun on the perovskite light absorbing layer to form electron transfer layer；
Evaporation coating method shape paired electrode on the electron transport layer is used again, thus obtains flexible transconfiguration perovskite solar-electricity
Pond.Specifically, the thickness of the electron transfer layer is 10nm~50nm；The thickness to electrode is 70nm~140nm, and it is heavy
Product method is thermal evaporation, and thermal evaporation deposition speed is not higher thanCan be silver-colored (Ag), aluminium (Al) or gold to electrode material
(Au)。
Before the evaporation to electrode, in order to improve device performance, reduction photo-generated carrier is compound, can select hole
Barrier deposition, preferably BCP (2,9- dimethyl -4,7- diphenyl -1,10- ferrosin) are deposited or spin-coating film, preferably thick
Spend for 3nm~5nm.
The flexible trans knot prepared using the preparation method of flexible transconfiguration perovskite solar cell as described above
Structure perovskite solar cell includes flexible conducting substrate, the hole transmission layer 4 formed on the flexible conducting substrate, formed
Perovskite light absorbing layer 3, the electron transfer layer 2 formed on the perovskite light absorbing layer 3 on the hole transmission layer 4
And formed on the electron transport layer to electrode 1.The flexible conducting substrate is to be coated with ITO (indium tin oxide semiconductor)
Flexible PEN (PEN) films or PET (polyethylene terephthalate) film of nesa coating, its
Including flexible substrates 6 and the conductive layer 5 in the flexible substrates 6 is formed, the conductive layer 5 is ITO conductive membrane layers.It is described
Hole transmission layer 4 is made of CuPc.The electron transfer layer 2 is made of fullerene derivate.It is described to electrode 1
It is made of silver, aluminium or gold.
Preparation method with several embodiments to above-mentioned flexible transconfiguration perovskite solar cell below
It is described in further detail.
Embodiment 1
The preparation method for the flexible transconfiguration perovskite solar cell that first embodiment of the invention provides mainly is wrapped
Include following steps：
The first step, pre-process flexible conducting substrate.Specifically, first, there is provided an ITO/PEN flexible conducting substrate, will
The flexible conducting substrate acetone and ethanol are cleaned by ultrasonic 15 minutes respectively；Afterwards, after the flexible conducting substrate is dried
30min is handled with UV ozone cleaning machine to carry out surface cleaning again.The resistivity of the flexible conducting substrate is up to 7 Ω
Cm, light permeable rate are more than 80%, and tolerable temperature is up to 200 DEG C.In present embodiment, the flexible conducting substrate includes flexible substrates
And form the ITO conductive membrane layers in the flexible substrates.
Second step, prepare hole transmission layer.Specifically, CuPc evaporations are arrived into the flexibility using resistance-type thermal evaporation apparatus
To form hole transmission layer in conductive substrates, the thickness of the hole transmission layer is 10nm~40nm.
3rd step, prepare perovskite light absorbing layer.Specifically, first by CH3NH3I and PbI2It is 1 according to mol ratio:1 matches somebody with somebody
Than gamma-butyrolacton solution is made；The gamma-butyrolacton solution is sufficiently mixed 6 hours at 60 DEG C to obtain yellow afterwards
Clarified solution；Finally, use spin-coating method that the clarified solution is deposited on to the surface of the hole transmission layer to inhale to form perovskite light
Receive layer, after made annealing treatment at 100 DEG C, annealing time 10min.
4th step, prepares electron transfer layer.Specifically, first by PC61BM is dissolved in chlorobenzene solvent to obtain PC61BM
Solution, PC61BM concentration is 20mgml-1；Afterwards by the PC61BM solution is placed in concussion stirring 1h at room temperature and obtains atropurpureus
Clarified solution；Finally, the atropurpureus clarified solution is deposited on by the perovskite light absorbing layer surface using spin-coating method, to form electricity
Sub- transport layer.
5th step, is prepared to electrode.Specifically, silver-colored (Ag) evaporation is passed to the electronics using resistance-type thermal evaporation apparatus
On defeated layer, the thickness to electrode is 80nm~140nm.
Embodiment 2
The preparation method for the flexible transconfiguration perovskite solar cell that second embodiment of the invention provides mainly is wrapped
Include following steps：
The first step, pre-process flexible conducting substrate.Specifically, first, there is provided an ITO/PET flexible conducting substrate, will
The flexible conducting substrate acetone and ethanol are cleaned by ultrasonic 15 minutes respectively；Afterwards, after the flexible conducting substrate is dried
30min is handled with UV ozone cleaning machine to carry out surface cleaning again.The resistivity of the flexible conducting substrate is up to 7 Ω
Cm, light permeable rate are more than 80%, and tolerable temperature is up to 130 DEG C.In present embodiment, the flexible conducting substrate includes flexible substrates
And form the ITO conductive membrane layers in the flexible substrates.
Second step, prepare hole transmission layer.Specifically, CuPc evaporations are arrived into the flexibility using resistance-type thermal evaporation apparatus
To form hole transmission layer in conductive substrates, the thickness of the hole transmission layer is 10nm~40nm.
3rd step, prepare perovskite light absorbing layer.Specifically, first by CH3NH3I and PbI2It is 1 according to mol ratio:1 matches somebody with somebody
Than solution is made, solvent is DMF and DMSO mixed solvents, and DMF is 4 with DMSO volume ratios:1, and it is small at 60 DEG C to be sufficiently mixed 1
When obtain the clarified solution of yellow；Finally, the clarified solution is deposited on by the hole transport layer surface using spin-coating method, to be formed
Perovskite light absorbing layer, after made annealing treatment at 100 DEG C, annealing time 10min.
4th step, prepares electron transfer layer.Specifically, first by PC61BM is dissolved in chlorobenzene solvent to obtain PC61BM
Solution, PC61BM concentration is 20mgml-1；Afterwards by the PC61BM solution is placed in concussion stirring 1h at room temperature and obtains atropurpureus
Clarified solution；Finally, the atropurpureus clarified solution is deposited on by the perovskite light absorbing layer surface using spin-coating method, to form electricity
Sub- transport layer.
5th step, prepares hole blocking layer.Specifically, BCP is dissolved in alcohol solvent to obtain BCP solution, BCP is dense
Spend for 0.5mgml-1；The BCP solution is placed in concussion stirring 24h at room temperature afterwards and obtains colorless and clear liquid；Finally, use
The colorless and clear liquid is deposited on the electric transmission layer surface by spin-coating method, to form hole blocking layer.
6th step, is prepared to electrode.Specifically, aluminium (Ag) evaporation is hindered to the hole using resistance-type thermal evaporation apparatus
In barrier, the thickness to electrode is 80nm~140nm.
Embodiment 3
Third embodiment of the invention provide flexible transconfiguration perovskite solar cell preparation method include with
Lower step：
The first step, pre-process flexible conducting substrate.Specifically, first, there is provided an ITO/PET flexible conducting substrate, will
The flexible conducting substrate acetone and ethanol are cleaned by ultrasonic 15 minutes respectively；Afterwards, after the flexible conducting substrate is dried
30min is handled with UV ozone cleaning machine to carry out surface cleaning again.The resistivity of the flexible conducting substrate is up to 7 Ω
Cm, light permeable rate are more than 80%, and tolerable temperature is up to 130 DEG C.In present embodiment, the flexible conducting substrate includes flexible substrates
And form the ITO conductive membrane layers in the flexible substrates.
Second step, prepare hole transmission layer.Specifically, CuPc evaporations are arrived into the flexibility using resistance-type thermal evaporation apparatus
In conductive substrates, the thickness of the hole transmission layer is 10nm~40nm, to improve the hole transmission layer surface wettability, is matched somebody with somebody
The PEI solution that percentage by weight is 0.04wt% is put, solvent is ethylene glycol monomethyl ether (2-Methoxyethanol), afterwards by described in
PEI solution is placed in concussion stirring 24h at room temperature and obtains colorless and clear liquid；Finally, the colorless and clear liquid is sunk using spin-coating method
Product should be not less than 4500rpm in the hole transport layer surface, spin speed.
3rd step, prepare perovskite light absorbing layer.Specifically, first by 172mg HC (NH2)2I、22.4mg CH3NH3I、
507mg PbI2、73.4mg PbBr2It is dissolved in solvent, solvent is DMF and DMSO mixed solvents, and DMF is 5 with DMSO volume ratios:
1, and be sufficiently mixed 1 hour at 60 DEG C and obtain the clarified solution of yellow；Finally, the clarified solution is deposited on by institute using spin-coating method
State hole transport layer surface, to form perovskite light absorbing layer, after made annealing treatment at 130 DEG C, annealing time is
10min。
4th step, prepares electron transfer layer.Specifically, first by PC61BM is dissolved in chlorobenzene solvent to obtain PC61BM
Solution, concentration 20mgml-1；Afterwards by the PC61BM solution is placed in concussion stirring 1h at room temperature and obtains atropurpureus clarification
Liquid；Finally, the atropurpureus clarified solution is deposited on by the perovskite light absorbing layer surface using spin-coating method, to form electronics biography
Defeated layer.
5th step, prepares hole blocking layer.Specifically, BCP is dissolved in alcohol solvent to obtain BCP solution, concentration
For 0.5mgml-1；The BCP solution is placed in concussion stirring 24h at room temperature afterwards and obtains colorless and clear liquid；Finally, using rotation
The colorless and clear liquid is deposited on the electric transmission layer surface by coating, to form hole blocking layer.
6th step, is prepared to electrode.Specifically, aluminium (Al) evaporation is hindered to the hole using resistance-type thermal evaporation apparatus
In barrier, the thickness to electrode is 80nm~140nm.
Embodiment 4
Four embodiment of the invention provide flexible transconfiguration perovskite solar cell preparation method include with
Lower step：
The first step, pre-process flexible conducting substrate.Specifically, first, there is provided an ITO/PET flexible conducting substrate, will
The flexible conducting substrate acetone and ethanol are cleaned by ultrasonic 15 minutes respectively；Afterwards, after the flexible conducting substrate is dried
30min is handled with UV ozone cleaning machine to carry out surface cleaning again.The resistivity of the flexible conducting substrate is up to 7 Ω
Cm, light permeable rate are more than 80%, and tolerable temperature is up to 130 DEG C.In present embodiment, the flexible conducting substrate includes flexible substrates
And form the ITO conductive membrane layers in the flexible substrates.
Second step, prepare hole transmission layer.Specifically, CuPc evaporations are arrived into the flexibility using resistance-type thermal evaporation apparatus
In conductive substrates, the thickness of the hole transmission layer is 10nm~40nm, will to improve the hole transmission layer surface wettability
The hole transmission layer carries out UV ozone processing 1min.
3rd step, prepare perovskite light absorbing layer.Specifically, first by 172mg HC (NH2)2I、22.4mg CH3NH3I、
507mg PbI2、73.4mg PbBr2It is dissolved in solvent, solvent is DMF and DMSO mixed solvents, and DMF is 5 with DMSO volume ratios:
1, it is sufficiently mixed at 60 DEG C 1 hour and obtains the clarified solution of yellow；Finally, the clarified solution is deposited on using spin-coating method described
Hole transport layer surface, to form perovskite light absorbing layer, after made annealing treatment at 130 DEG C, annealing time 10min.
4th step, prepares electron transfer layer.Using resistance-type thermal evaporation apparatus by PC61BM evaporations are inhaled to the perovskite light
Receive on layer, to form electron transfer layer, the thickness of the electron transfer layer is 20nm~40nm.
5th step, prepares hole blocking layer.Specifically, BCP evaporations are arrived into the electronics using resistance-type thermal evaporation apparatus
In transport layer, to form hole blocking layer, the thickness of the hole blocking layer is 3nm~5nm.
6th step, is prepared to electrode.Specifically, golden (Au) evaporation is hindered to the hole using resistance-type thermal evaporation apparatus
With shape paired electrode in barrier, the thickness to electrode is 80nm~140nm.
Flexible transconfiguration perovskite solar cell provided by the invention and preparation method thereof, by using CuPc generation
For conventional oxidation nickel (NiOx) hole transmission layer as transconfiguration solar cell, by hole transmission layer preparation temperature by
500 DEG C are reduced to room temperature, and hole transmission layer evaporation coating method produces available for large area, has good industrialization prospect.
In addition, preparing light absorbing layer by using anti-solvent, compared with traditional two-step method calcium titanium ore bed preparation method, the light of preparation is inhaled
Receiving layer has more excellent flatness, and improves crystal grain diameter, has been passivated local defect, has improved battery performance.
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, not to
The limitation present invention, all any modification, equivalent and improvement made within the spirit and principles of the invention etc., all should be included
Within protection scope of the present invention.
Claims (10)
1. a kind of preparation method of flexible transconfiguration perovskite solar cell, it is characterised in that this method includes following step
Suddenly：
(1) flexible conducting substrate is provided, by the flexible conducting substrate of the CuPc by thermal evaporation method evaporation after cleaning
On to form hole transmission layer, wherein, the flexible conducting substrate is be coated with indium tin oxide transparent conductive semiconductor film soft
Property PEN film or pet film；
(2) spin coating liquid is spin-coated on the surface of the hole transmission layer using anti-solvent method, and to the flexible conducting substrate
Heated, thus obtain perovskite light absorbing layer；
(3) fullerene derivate solution is spun on the perovskite light absorbing layer to form electron transfer layer；Again using steaming
Electroplating method shape paired electrode on the electron transport layer, thus obtains flexible transconfiguration perovskite solar cell.
2. the preparation method of flexible transconfiguration perovskite solar cell as claimed in claim 1, it is characterised in that：Step
(1) the thermal evaporation deposition speed in is not higher thanHeating-up temperature in step (2) is 90 DEG C~130 DEG C, and the heat time is
5min~60min.
3. the preparation method of flexible transconfiguration perovskite solar cell as claimed in claim 1, it is characterised in that：It is described
Spin coating liquid is chemical formula ABX3The compound of type, wherein, X F, Cl, Br or I, B are Pb or Sn, A Cs+、CH3NH3 +、HC
(NH2)2 +、CH3CH2NH3 +Or CH3CH2CH2NH3 +。
4. the preparation method of the flexible transconfiguration perovskite solar cell as described in claim any one of 1-3, its feature
It is：Spin speed in step (2) is 4000rpm~6000rpm, and spin-coating time is 20s~40s.
5. the preparation method of the flexible transconfiguration perovskite solar cell as described in claim any one of 1-3, its feature
It is：5s~30s in anti-solvent method spin coating process after spin speed reaches setting speed, on the hole transport layer
It is added dropwise with the immiscible polar organic solvent of perovskite material as anti-solvent.
A kind of 6. preparation method of flexible transconfiguration perovskite solar cell using as described in claim any one of 1-5
The flexible transconfiguration perovskite solar cell of preparation, it is characterised in that：
The flexible transconfiguration perovskite solar cell includes flexible conducting substrate, formed on the flexible conducting substrate
Hole transmission layer, form perovskite light absorbing layer on the hole transport layer, formed in the perovskite light absorbing layer
On electron transfer layer and formed on the electron transport layer to electrode；The flexible conducting substrate aoxidizes to be coated with indium tin
Flexible the PEN film or pet film of thing transparent conductive semiconductor film.
7. flexible transconfiguration perovskite solar cell as claimed in claim 6, it is characterised in that：The compliant conductive base
Bottom includes flexible substrates and forms the conductive layer in the flexible substrates, and the conductive layer is ITO conductive membrane layers.
8. flexible transconfiguration perovskite solar cell as claimed in claim 6, it is characterised in that：The hole transmission layer
It is made of CuPc；The electron transfer layer is made of fullerene derivate；It is described be to electrode by silver, aluminium or
Made of gold.
9. the flexible transconfiguration perovskite solar cell as described in claim any one of 6-8, it is characterised in that：The sky
The thickness of cave transport layer is 10nm~80nm.
10. the flexible transconfiguration perovskite solar cell as described in claim any one of 6-8, it is characterised in that：It is described
The thickness of perovskite light absorbing layer is 400nm~600nm, and the thickness of the electron transfer layer is 10nm~50nm；It is described to electricity
The thickness of pole is 70nm~140nm.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108365105A (en) * | 2018-04-03 | 2018-08-03 | 南京邮电大学 | A kind of perovskite solar cell and preparation method thereof |
| CN109686841A (en) * | 2018-11-23 | 2019-04-26 | 浙江理工大学上虞工业技术研究院有限公司 | A kind of hypotoxicity anti-solvent prepares the method and its application of Br based perovskite film |
| CN109950404A (en) * | 2019-03-30 | 2019-06-28 | 南昌大学 | A method of improving perovskite solar battery efficiency and hydrothermal stability |
| CN113249690A (en) * | 2021-05-13 | 2021-08-13 | 中山市武汉理工大学先进工程技术研究院 | Preparation method of tungsten-doped indium oxide thin film and flexible perovskite solar cell prepared by adopting thin film |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015016201A1 (en) * | 2013-07-31 | 2015-02-05 | 富士フイルム株式会社 | Photoelectric conversion element, production method for photoelectric conversion element, and solar cell |
| CN104425723A (en) * | 2013-08-22 | 2015-03-18 | 海洋王照明科技股份有限公司 | Organic electroluminescent device and preparation method thereof |
| KR20170000422A (en) * | 2015-06-23 | 2017-01-03 | 가천대학교 산학협력단 | Method for preparing Perovskite Solar Cell using 1,8-diiodooctane |
| CN106910798A (en) * | 2017-04-06 | 2017-06-30 | 华中科技大学 | A kind of inorganic perovskite solar cell and preparation method thereof |
| CN106953014A (en) * | 2017-03-31 | 2017-07-14 | 周德明 | A kind of hybrid solar cell structure and preparation method using CuPc as hole transmission layer |
| CN106953015A (en) * | 2017-04-01 | 2017-07-14 | 武汉理工大学 | A kind of preparation method of high efficiency large area perovskite solar cell |
| CN107248549A (en) * | 2017-05-27 | 2017-10-13 | 华中科技大学 | A kind of low temperature flexibility perovskite solar cell and preparation method thereof |
-
2017
- 2017-10-17 CN CN201710961368.8A patent/CN107863443A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015016201A1 (en) * | 2013-07-31 | 2015-02-05 | 富士フイルム株式会社 | Photoelectric conversion element, production method for photoelectric conversion element, and solar cell |
| CN104425723A (en) * | 2013-08-22 | 2015-03-18 | 海洋王照明科技股份有限公司 | Organic electroluminescent device and preparation method thereof |
| KR20170000422A (en) * | 2015-06-23 | 2017-01-03 | 가천대학교 산학협력단 | Method for preparing Perovskite Solar Cell using 1,8-diiodooctane |
| CN106953014A (en) * | 2017-03-31 | 2017-07-14 | 周德明 | A kind of hybrid solar cell structure and preparation method using CuPc as hole transmission layer |
| CN106953015A (en) * | 2017-04-01 | 2017-07-14 | 武汉理工大学 | A kind of preparation method of high efficiency large area perovskite solar cell |
| CN106910798A (en) * | 2017-04-06 | 2017-06-30 | 华中科技大学 | A kind of inorganic perovskite solar cell and preparation method thereof |
| CN107248549A (en) * | 2017-05-27 | 2017-10-13 | 华中科技大学 | A kind of low temperature flexibility perovskite solar cell and preparation method thereof |
Non-Patent Citations (2)
| Title |
|---|
| FUGUOZHANG等: "Boosting the efficiency and the stability of low cost perovskite solar cells by using CuPc nanorods as hole transport material and carbon as counter electrode", 《NANO ENERGY》 * |
| LI P等: "Polyethyleneimine High-Energy Hydrophilic Surface Interfacial Treatment toward Efficient and Stable Perovskite Solar Cells", 《ACS APPL MATER INTERFACES》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108365105A (en) * | 2018-04-03 | 2018-08-03 | 南京邮电大学 | A kind of perovskite solar cell and preparation method thereof |
| CN108365105B (en) * | 2018-04-03 | 2021-07-20 | 南京邮电大学 | Perovskite solar cell and preparation method thereof |
| CN109686841A (en) * | 2018-11-23 | 2019-04-26 | 浙江理工大学上虞工业技术研究院有限公司 | A kind of hypotoxicity anti-solvent prepares the method and its application of Br based perovskite film |
| CN109950404A (en) * | 2019-03-30 | 2019-06-28 | 南昌大学 | A method of improving perovskite solar battery efficiency and hydrothermal stability |
| CN113249690A (en) * | 2021-05-13 | 2021-08-13 | 中山市武汉理工大学先进工程技术研究院 | Preparation method of tungsten-doped indium oxide thin film and flexible perovskite solar cell prepared by adopting thin film |
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