CN107861340A - Mk system and method for measurement for the measurement of multilayer alignment precision - Google Patents
Mk system and method for measurement for the measurement of multilayer alignment precision Download PDFInfo
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- CN107861340A CN107861340A CN201711394225.XA CN201711394225A CN107861340A CN 107861340 A CN107861340 A CN 107861340A CN 201711394225 A CN201711394225 A CN 201711394225A CN 107861340 A CN107861340 A CN 107861340A
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- China
- Prior art keywords
- measurement
- alignment precision
- overlay mark
- multilayer alignment
- multilayer
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7088—Alignment mark detection, e.g. TTR, TTL, off-axis detection, array detector, video detection
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
The present invention discloses a kind of Mk system and method for measurement for the measurement of multilayer alignment precision.Mk system for the measurement of multilayer alignment precision includes at least two overlay mark, and each overlay mark characterizes different lithography layers, and known to the relative position between each overlay mark.For the method for measurement of the Mk system of multilayer alignment precision measurement, including, step S1：Mk system is set in lithography layout, and overlay mark is transferred on wafer by photoetching process；Step S2：Measurement platform is taken pictures to overlay mark in the focal plane where overlay mark and obtains image information, and to Image Information Processing, measures in image the relative deviant between figure two-by-two, as alignment precision value.Mk system of the present invention is not only with good expansibility, and can realize synchronous measure multilayer alignment precision, improves production efficiency, cost-effective.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, more particularly to a kind of mark system for the measurement of multilayer alignment precision
System and method for measurement.
Background technology
Photoetching is the critical process in semi-conductor industry, and wherein alignment precision refers to front layer lithography layer and works as layer photoetching
The registration being superimposed between layer.The control of alignment precision is very crucial to photoetching process, with the propulsion of technology node, photoetching work
Requirement of the skill to alignment precision also more and more higher.Moreover, need to consider simultaneously for some special photoetching processes, such as via layer
To the alignment precision of above multiple lithography layers, the measurement efficiency of alignment precision is obvious to the process time of photoetching and production cost
Tool has a significant impact.
Normally, measurement of the industry to alignment precision adopts the following technical scheme that, is related to front layer and when two alignment of layer
Mark, for needing to control the lithography layer of multilayer alignment precision to need to carry out multistep measurement, multilayer alignment precision certainly will be increased
Measure number, not only complex steps, and extend the process time of photoetching and improve production cost.
Therefore the problem of existing for prior art, this case designer is by the experience of the industry for many years is engaged in, actively research
Improvement, then there is a kind of Mk system and method for measurement for the measurement of multilayer alignment precision of the invention.
The content of the invention
The present invention be directed in the prior art, industry is for requiring to control the lithography layer of multilayer alignment precision to carry out multistep
Measure, the measurement number of multilayer alignment precision certainly will be increased, the defects of extending the process time of photoetching, and improve production cost
A kind of Mk system for the measurement of multilayer alignment precision is provided.
The further object of the present invention is in the prior art, and industry is for requiring to control the lithography layer of multilayer alignment precision
Multistep measurement need to be carried out, the measurement number of multilayer alignment precision certainly will be increased, extends the process time of photoetching, and improves production
The defects of cost, provides a kind of method for measurement of the Mk system for the measurement of multilayer alignment precision.
To realize the purpose of the present invention, the present invention provides a kind of Mk system for the measurement of multilayer alignment precision, described
Mk system for the measurement of multilayer alignment precision includes at least two overlay mark, and each overlay mark characterizes difference
Lithography layer, and known to the relative position between each overlay mark.
Alternatively, the overlay mark of the Mk system for the measurement of multilayer alignment precision is set in "+" shape.
Alternatively, the overlay mark width dimensions for the Mk system of multilayer alignment precision measurement are 100nm~10 μm.
Alternatively, the overlay mark appearance profile size for the Mk system of multilayer alignment precision measurement is 1~100 μ
m。
For realize the present invention a further object, the present invention provide it is a kind of for multilayer alignment precision measure Mk system it
Method for measurement, the method for measurement of the Mk system for the measurement of multilayer alignment precision, including,
Perform step S1：The Mk system of multilayer alignment precision measurement is provided in lithography layout, and passes through photoetching
The overlay mark of the Mk system for the measurement of multilayer alignment precision is transferred to wafer by technique；
Perform step S2：Measurement platform is in Jiao where the overlay mark of the Mk system measured for multilayer alignment precision
Plane is taken pictures to the overlay mark and obtains image information, and described image information is handled, and then is measured two in image
Relative deviant between two figures, as alignment precision value.
Alternatively, the image information obtained to the measurement platform is handled, for by software program by the figure
As information is converted to coordinate digital.
Alternatively, the overlay mark for the Mk system of multilayer alignment precision measurement is set in "+" shape.
Alternatively, the Mk system for the measurement of multilayer alignment precision includes 3~5 overlay marks.
In summary, the present invention is used for the Mk system of multilayer alignment precision measurement by setting at least two set
Marking, wherein each overlay mark characterizes different lithography layers, and the relative position between each overlay mark is not, it is known that
Only described Mk system is with good expansibility, and can realize synchronous measure multilayer alignment precision, improves production efficiency,
It is cost-effective.
Brief description of the drawings
Fig. 1 show the structural representation that the present invention is used for the Mk system of multilayer alignment precision measurement；
Fig. 2 show the method for measurement flow chart that the present invention is used for the Mk system of multilayer alignment precision measurement；
Fig. 3 show the first embodiment structural representation that the present invention is used for the Mk system of multilayer alignment precision measurement
Figure；
Fig. 4 show the second embodiment structural representation that the present invention is used for the Mk system of multilayer alignment precision measurement
Figure.
Embodiment
To describe technology contents, construction feature, institute's reached purpose and effect of the invention in detail, below in conjunction with reality
Apply example and coordinate accompanying drawing to be described in detail.
Photoetching is the critical process in semi-conductor industry, and wherein alignment precision refers to front layer lithography layer and works as layer photoetching
The registration being superimposed between layer.The control of alignment precision is very crucial to photoetching process, with the propulsion of technology node, photoetching work
Requirement of the skill to alignment precision also more and more higher.Moreover, need to consider simultaneously for some special photoetching processes, such as via layer
To the alignment precision of above multiple lithography layers, the measurement efficiency of alignment precision is obvious to the process time of photoetching and production cost
Tool has a significant impact.
Normally, measurement of the industry to alignment precision adopts the following technical scheme that, is related to front layer and when two alignment of layer
Mark, for needing to control the lithography layer of multilayer alignment precision to need to carry out multistep measurement, multilayer alignment precision certainly will be increased
Measure number, not only complex steps, and extend the process time of photoetching and improve production cost.
Referring to Fig. 1, Fig. 1 show the structural representation that the present invention is used for the Mk system of multilayer alignment precision measurement.
The Mk system 1 for the measurement of multilayer alignment precision, including at least two overlay mark 11, wherein respectively set blaze
Note 11 characterizes different lithography layers, and known to the relative position between each overlay mark 11.
Referring to Fig. 2, Fig. 2 show the method for measurement flow that the present invention is used for the Mk system of multilayer alignment precision measurement
Figure.The method for measurement of the Mk system for the measurement of multilayer alignment precision, including：
Perform step S1：The Mk system 1 of multilayer alignment precision measurement is provided in lithography layout, and passes through photoetching
The overlay mark 11 of the Mk system 1 for the measurement of multilayer alignment precision is transferred to wafer by technique；
Perform step S2：Where overlay mark 11 of the measurement platform in the Mk system 1 measured for multilayer alignment precision
Focal plane the overlay mark 11 taken pictures obtain image information, and described image information is handled, and then measure figure
The relative deviant between figure, as alignment precision value two-by-two as in.
In the present invention, the image information obtained to the measurement platform is handled, specifically by software program
Described image information is converted into coordinate digital, you can the relative skew between figure two-by-two is determined in image by coordinate digital
Value, synchronously realize that multilayer alignment precision measures.
In order to more intuitively disclose the technical scheme of the present invention, the beneficial effect of the present invention is highlighted, in conjunction with specific implementation
Exemplified by mode, the Mk system for the measurement of multilayer alignment precision and method for measurement are illustrated.In specific embodiment party
In formula, shape, size, position setting and quantity of the overlay mark of the Mk system for the measurement of multilayer alignment precision etc.
Only enumerate, be not construed as the limitation to technical solution of the present invention.As those skilled in the art, it is readily appreciated that, the use
It is with good expansibility in the Mk system of multilayer alignment precision measurement, by using different overlay mark combination sides
Formula, it is possible to achieve the multiple lithography layers of Mk system synchronous measure.
Without limitation, such as the overlay mark for being used for the Mk system that multilayer alignment precision measures is set in "+" shape
Put, known to the relative position of the overlay mark of the Mk system.More specifically, the mark for the measurement of multilayer alignment precision
The overlay mark width dimensions of note system are 100nm~10 μm, the set of the Mk system for the measurement of multilayer alignment precision
Marking appearance profile size is 1~100 μm.First embodiment
In the first embodiment, it is in "+" with the overlay mark of the Mk system for the measurement of multilayer alignment precision
Shape is set, and the overlay mark quantity of the Mk system is illustrated exemplified by being 4.
Referring to Fig. 3, and combine and refer to Fig. 1, Fig. 2, Fig. 3 show the present invention and is used for the mark that multilayer alignment precision measures
The first embodiment structural representation of system.The overlay mark of the Mk system 1a for the measurement of multilayer alignment precision
11a is set in "+" shape, and the overlay mark 11a quantity of the Mk system 1a is 4, overlay mark 11a characterize 4 it is different
Lithography layer, and known to the relative position between the overlay mark 11a.The Mk system for the measurement of multilayer alignment precision
Method for measurement, including：
Perform step S1：The Mk system 1a of multilayer alignment precision measurement is provided in lithography layout, and passes through light
The overlay mark 11a of the Mk system 1a for the measurement of multilayer alignment precision is transferred to wafer by carving technology；
Perform step S2：Overlay mark 11a institute of the measurement platform in the Mk system 1a measured for multilayer alignment precision
Focal plane the overlay mark 11a taken pictures obtain image information, and described image information is handled, and then measure
Relative deviant between figure two-by-two in image, the alignment precision value of as 4 different lithography layers.
Second embodiment
In this second embodiment, it is in "+" with the overlay mark of the Mk system for the measurement of multilayer alignment precision
Shape is set, and the overlay mark quantity of the Mk system is illustrated exemplified by being 5.
Referring to Fig. 4, and combine and refer to Fig. 1, Fig. 2, Fig. 4 show the present invention and is used for the mark that multilayer alignment precision measures
The second embodiment structural representation of system.The overlay mark of the Mk system 1b for the measurement of multilayer alignment precision
11b is set in "+" shape, and the overlay mark 11b quantity of the Mk system 1b is 5, overlay mark 11b characterize 5 it is different
Lithography layer, and known to the relative position between the overlay mark 11b.The Mk system for the measurement of multilayer alignment precision
Method for measurement, including：
Perform step S1：The Mk system 1b of multilayer alignment precision measurement is provided in lithography layout, and passes through light
The overlay mark 11b of the Mk system 1b for the measurement of multilayer alignment precision is transferred to wafer by carving technology；
Perform step S2：Overlay mark 11b institute of the measurement platform in the Mk system 1b measured for multilayer alignment precision
Focal plane the overlay mark 11b taken pictures obtain image information, and described image information is handled, and then measure
Relative deviant between figure two-by-two in image, the alignment precision value of as 5 different lithography layers.
It is apparent that the present invention is used for the Mk system 1 of multilayer alignment precision measurement by setting at least two set
Marking 11, wherein each overlay mark 11 characterizes different lithography layers, and the relative position between each overlay mark 11
, it is known that not only the Mk system 1 is with good expansibility, and can realize synchronous measure multilayer alignment precision, improve
Production efficiency, it is cost-effective.
In summary, the present invention is used for the Mk system of multilayer alignment precision measurement by setting at least two set
Marking, wherein each overlay mark characterizes different lithography layers, and the relative position between each overlay mark is not, it is known that
Only described Mk system is with good expansibility, and can realize synchronous measure multilayer alignment precision, improves production efficiency,
It is cost-effective.
Those skilled in the art, can be to this hair it will be appreciated that without departing from the spirit or scope of the present invention
Bright carry out various modifications and variations.Thus, if any modification or modification fall into the protection of appended claims and equivalent
In the range of when, it is believed that the present invention covers these modifications and variations.
Claims (8)
1. a kind of Mk system for the measurement of multilayer alignment precision, it is characterised in that the multilayer alignment precision that is used for measures
Mk system include at least two overlay mark, each overlay mark characterizes different lithography layers, and each set
Known to relative position between marking.
2. the Mk system for the measurement of multilayer alignment precision as claimed in claim 1, it is characterised in that described to be used for multilayer set
The overlay mark for carving the Mk system of precision measure is set in "+" shape.
3. the Mk system for the measurement of multilayer alignment precision as claimed in claim 1, it is characterised in that for multilayer alignment essence
The overlay mark width dimensions for spending the Mk system of measurement are 100nm~10 μm.
4. the Mk system for the measurement of multilayer alignment precision as claimed in claim 1, it is characterised in that for multilayer alignment essence
The overlay mark appearance profile size for spending the Mk system of measurement is 1~100 μm.
A kind of 5. method for measurement of the Mk system measured as claimed in claim 1 for multilayer alignment precision, it is characterised in that
The method for measurement of the Mk system for the measurement of multilayer alignment precision, including,
Perform step S1：The Mk system of multilayer alignment precision measurement is provided in lithography layout, and passes through photoetching process
The overlay mark of the Mk system for the measurement of multilayer alignment precision is transferred to wafer；
Perform step S2：Measurement platform is in the focal plane where the overlay mark of the Mk system measured for multilayer alignment precision
The overlay mark is taken pictures and obtains image information, and described image information is handled, and then measures in image and schemes two-by-two
Relative deviant between shape, as alignment precision value.
6. the method for measurement of the Mk system measured as claimed in claim 5 for multilayer alignment precision, it is characterised in that to institute
State the image information that measurement platform is obtained to be handled, for described image information is converted into number of coordinates by software program
Word.
7. the method for measurement of the Mk system measured as claimed in claim 5 for multilayer alignment precision, it is characterised in that be used for
The overlay mark of the Mk system of multilayer alignment precision measurement is set in "+" shape.
8. the method for measurement of the Mk system measured as claimed in claim 7 for multilayer alignment precision, it is characterised in that described
Mk system for the measurement of multilayer alignment precision includes 3~5 overlay marks.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201711394225.XA CN107861340A (en) | 2017-12-21 | 2017-12-21 | Mk system and method for measurement for the measurement of multilayer alignment precision |
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| CN201711394225.XA CN107861340A (en) | 2017-12-21 | 2017-12-21 | Mk system and method for measurement for the measurement of multilayer alignment precision |
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| CN107861340A true CN107861340A (en) | 2018-03-30 |
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| CN201711394225.XA Pending CN107861340A (en) | 2017-12-21 | 2017-12-21 | Mk system and method for measurement for the measurement of multilayer alignment precision |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023284037A1 (en) * | 2021-07-15 | 2023-01-19 | 长鑫存储技术有限公司 | Measurement mark, measurement layout, and measurement method |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105511235A (en) * | 2016-02-15 | 2016-04-20 | 京东方科技集团股份有限公司 | Overlay key, method for forming overlay key and method for measuring overlay precision |
| CN106019860A (en) * | 2016-07-27 | 2016-10-12 | 京东方科技集团股份有限公司 | Determining method of alignment precision |
-
2017
- 2017-12-21 CN CN201711394225.XA patent/CN107861340A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105511235A (en) * | 2016-02-15 | 2016-04-20 | 京东方科技集团股份有限公司 | Overlay key, method for forming overlay key and method for measuring overlay precision |
| CN106019860A (en) * | 2016-07-27 | 2016-10-12 | 京东方科技集团股份有限公司 | Determining method of alignment precision |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023284037A1 (en) * | 2021-07-15 | 2023-01-19 | 长鑫存储技术有限公司 | Measurement mark, measurement layout, and measurement method |
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