CN107857583A - A kind of cuprous oxide semiconductor ceramic material and preparation method thereof - Google Patents

A kind of cuprous oxide semiconductor ceramic material and preparation method thereof Download PDF

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CN107857583A
CN107857583A CN201711096854.4A CN201711096854A CN107857583A CN 107857583 A CN107857583 A CN 107857583A CN 201711096854 A CN201711096854 A CN 201711096854A CN 107857583 A CN107857583 A CN 107857583A
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ratio
ceramic material
semiconductor ceramic
cuprous oxide
oxide semiconductor
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CN107857583B (en
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乌凯
万思明
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Shaanxi Aero Electric Co Ltd
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Abstract

A kind of cuprous oxide semiconductor ceramic material of the present invention and preparation method thereof, belongs to technical field of function materials.A kind of new cuprous oxide semiconductor ceramic material formula proposed by the present invention, the formula changes directly used Cu in the past2O raw materials, in Cu2Method of other metal oxide starting materials as composition is added on the basis of O.Change the compositing formula of semiconductor ceramic material, and select to increase conductive metal oxide, reduce the volume resistance of semiconductor ceramic material, improve semiconductor ceramic material electrocorrosion-resisting and chemical resistance corrosivity, increase semiconductor ceramic material and Al2O3, ZrO2The bond strength of matrix material, so as to improve the service life using semiconductor ceramic material.Meanwhile reduce the threat in preparation process to personnel and environment.

Description

A kind of cuprous oxide semiconductor ceramic material and preparation method thereof
Technical field
A kind of cuprous oxide semiconductor ceramic material of the present invention and preparation method thereof, belongs to technical field of function materials.
Background technology
According to the difference of semi-conducting material used in aero-engine semiconductor discharge plug discharge end, semiconductor discharge plug is divided into two Major class：The first kind is semi-conducting glaze type (coating) sparking plug, and discharge end is with Al2O3、ZrO2For matrix, more coating Cu on matrix2O Based on semiconductor ceramic material after fire and form；Second class is semiconductor piece type sparking plug, i.e., discharge end directly using SiC, SnO2It is molded Deng material direct pressing.Semiconductive ceramic has inhomogeneities and negative temperature-coefficient of electrical resistance, upon application of a voltage, Several electric admittances are formed, have electric current by the way that resistance reduces, current density increase.When current density increases to certain value, formed " snowslide " formula electric capacity discharges, and spark is formed in gap, so as to light fuel mixture body.
Wherein semi-conducting glaze type sparking plug due to processing technology it is simple, sparking plug electric discharge moment spark energy it is larger and in state It is inside and outside to be used at present more.But Cu is directly used in raw material2Cuprous oxide semiconductor ceramic material prepared by O is in temperature in use ＞ 1200 DEG C of electrocorrosion-resistings, chemical resistance deficiency, semiconductor ceramic material is because galvano-cautery destroys seriously, and finally loses Effect.
The content of the invention
The purpose of the present invention：A kind of new cuprous oxide semiconductor ceramic material formula is proposed, the formula changes in the past straight Connect and use Cu2O raw materials, in Cu2Method of other metal oxide starting materials as composition is added on the basis of O.Change semiconductive ceramic The compositing formula of material, and select to increase conductive metal oxide, the volume resistance of semiconductor ceramic material is reduced, improves half Conductive ceramic material electrocorrosion-resisting and chemical resistance corrosivity, increase semiconductor ceramic material and Al2O3, ZrO2Matrix material Bond strength, so as to improve the service life using semiconductor ceramic material.Meanwhile reduce in preparation process to personnel and The threat of environment.
Technical scheme：A kind of cuprous oxide semiconductor ceramic material, the cuprous oxide semiconductive ceramic material It is brilliant that the constituent of material includes cupric oxide, copper powder, di-iron trioxide, chrome green, silver nitrate, Mo Laishi, quartz sand, point Stone；Wherein the ratio of cupric oxide is 25%~39.8%, and the ratio of copper powder is 15%~25.4%, the ratio of di-iron trioxide is 0.5%~0.8%, the ratio of chrome green is 5%~9%, the ratio of silver nitrate is 5%~7.5%, Mo Laishi ratio Ratio for 5%~7%, quartz sand is 1%~5.5%, the ratio of spinelle is 1%~5%.
A kind of preparation method of cuprous oxide semiconductor ceramic material, methods described take following steps：
1) to cupric oxide, copper powder, di-iron trioxide, chrome green, silver nitrate, Mo Laishi, quartz sand, spinelle original Material carries out calcining pretreatment respectively, sieves；
2) material after sieving is weighed respectively, batch mixing so that in mixed material the ratio of cupric oxide be 25%~ 39.8%, the ratio of copper powder is 15%~25.4%, the ratio of di-iron trioxide is 0.5%~0.8%, the ratio of chrome green Example is 5%~9%, the ratio of silver nitrate is 5%~7.5%, Mo Laishi ratio is 5%~7%, the ratio of quartz sand is 1%~5.5%, the ratio of spinelle is 1%~5%, and mixed material is added in alumina porcelain ball grinder；
3) it is not more than 0.7 according to coefficient, by mixed material, ceramic grinding ball, absolute ethyl alcohol according to 1:2:0.7 Ratio be added in alumina porcelain ball grinder；
4) ball milling is after 36~72 hours, the mixture sieving after ball milling；It is and stand-by after being aged 24~48 hours.
Advantages of the present invention：
1) make full use of redox reaction to generate Cu2O, to promote reaction to carry out, add enough Cu powder, and Cu powder removes Redox reaction generation Cu2O is participated in, remaining Cu powder can be used as conductive material in semiconductor ceramic material composition, improve The electrical property of cuprous oxide semiconductor ceramic material.And Cu2O is insulator under normal conditions, semiconduction is not shown as, and In the case of oxygen excess, during as Cu2-xO, hole is produced, forms P-type semiconductor.
2) Cu2O is a kind of red powder solid, has stronger toxicity, huge to human body and environmental hazard, especially right In water and its harm, environmental pollution is easily caused.CuO is a kind of black powder solid, relative to Cu2O, for human body and ring The threat in border is smaller.
3) Cu2O fusing points are 1235 DEG C, and CuO is 1026 DEG C, appropriate reduction sintering fusing point, are easy to sinter.
Cu2O semiconductor ceramic materials of the present invention have good combination property, and coating granularity is 300 mesh, is had Good can application property；974 DEG C~1012 DEG C of softening temperature；Linear expansion coefficient (6.8~7.6) × 1/ DEG C of 10-6 (25 DEG C~ 1000℃)；Specific insulation ＜ 0.3M Ω cm；During using common product fixture and experimental condition, minimum electric discharge electricity under normal pressure 900V is pressed, drips minimum discharge voltage 1000V under kerosene and 1.5 atmospheric pressure.
By the present invention relates to cuprous oxide semiconductor ceramic material be coated on ceramic matrix surface, in cabinet-type electric furnace 1260 ± 10 DEG C of insulation 30min are warming up to stove.Less than 150 DEG C are naturally cooled to stove to come out of the stove, sinter into and be attached with after power-off The part of cuprous oxide semiconductor ceramic material coating has higher electrocorrosion-resisting, chemical resistance, good thermal shock resistance, makes With long lifespan, accumulative spark number can reach more than 1,300,000 times.
Cuprous oxide semi-conducting material of the present invention is applicable not only to aviation low-pressure high-energy semiconductor discharge plug, is also suitable In other civilian igniting fields, such as automobile, petrochemical industry.
Brief description of the drawings
Fig. 1 cuprous oxide semiconductor ceramic material preparation flows
The semiconductor devices of Fig. 2 semiconductive ceramics containing cuprous oxide coating
Embodiment
A kind of cuprous oxide semiconductor ceramic material, the constituent of the cuprous oxide semiconductor ceramic material include oxygen Change copper, copper powder, di-iron trioxide, chrome green, silver nitrate, Mo Laishi, quartz sand, spinelle；The wherein ratio of cupric oxide For 25%~39.8%, the ratio of copper powder is 15%~25.4%, the ratio of di-iron trioxide is 0.5%~0.8%, three oxidations The ratio of two chromium is 5%~9%, the ratio of silver nitrate is 5%~7.5%, Mo Laishi ratio is 5%~7%, quartz sand Ratio is 1%~5.5%, the ratio of spinelle is 1%~5%.
A kind of preparation method of cuprous oxide semiconductor ceramic material, methods described take following steps：
1) to cupric oxide, copper powder, di-iron trioxide, chrome green, silver nitrate, Mo Laishi, quartz sand, spinelle original Material carries out calcining pretreatment respectively, sieves；
2) material after sieving is weighed respectively, batch mixing so that in mixed material the ratio of cupric oxide be 25%~ 39.8%, the ratio of copper powder is 15%~25.4%, the ratio of di-iron trioxide is 0.5%~0.8%, the ratio of chrome green Example is 5%~9%, the ratio of silver nitrate is 5%~7.5%, Mo Laishi ratio is 5%~7%, the ratio of quartz sand is 1%~5.5%, the ratio of spinelle is 1%~5%, and mixed material is added in alumina porcelain ball grinder；
3) it is not more than 0.7 according to coefficient, by mixed material, ceramic grinding ball, absolute ethyl alcohol according to 1:2:0.7 Ratio be added in alumina porcelain ball grinder；
4) ball milling is after 36~72 hours, the mixture sieving after ball milling；It is and stand-by after being aged 24~48 hours.
The present invention is described in more detail below in conjunction with the accompanying drawings.
The composition for the cuprous oxide semiconductor ceramic material that claims of the present invention is related to include CuO, Cu powder, Fe2O3, Cr2O3, AgNO3, Mo Laishi, quartz sand, spinelle, solvent are absolute ethyl alcohol, and concrete composition is formulated such as table 1：
The cuprous oxide semiconductor ceramic material of table 1 forms
Sequence number Title Chemical formula Content (wt%)
1 Cupric oxide CuO 39.8
2 Copper powder Cu 25.4
3 Di-iron trioxide Fe2O3 0.8
4 Chrome green Cr2O3 9
5 Silver nitrate AgNO3 7.5
6 Mo Laishi 3Al2O3·2SiO2-Al2O3 7
7 Quartz sand SiO2 5.5
8 Spinelle MgO·Al2O3 5
The constitutive material of cuprous oxide semiconductor ceramic material can be divided into three classes according to its effect in component：1. half Leading material；2. conductive material；3. mineralizer；Concrete composition is shown in Table 2.Cuprous oxide semiconductor ceramic material three major types form (table 2)
Table 2
Chemical composition Semiconducting material Conductive material Mineralizer
W% 65.2 17.3 17.5
CuO, Cu powder belong to semiconducting material (table 3) in the composition
Table 3
Chemical composition CuO Cu
W% 61 39
Belong to conductive material (table 4) in AgNO3, Cr2O3, Fe2O3 composition
Table 4
Belong to mineralizer material (table 5) in Mo Laishi, quartz sand, spinelle composition
Table 5
The present invention carries out the processing of certain type aviation igniting semiconductor discharge plug semiconductor devices according to the following steps：
1st, required material is weighed by formula；
2nd, after being calcined respectively to material, 300 eye mesh screens is crossed, are poured into alumina porcelain ball grinder, according to material：Ball (ceramics Ball)：Water (absolute ethyl alcohol)=1:2:0.7, coefficient is not more than 0.7, wet ball grinding 36 hours.
3rd, by slurry dip-coating at part signal shown in Fig. 2, after spontaneously drying, it is placed in porous porcelain boat.
4th, porcelain boat is put into box high-temperature electric resistance furnace, is warming up to 1260 ± 10 DEG C with stove, is incubated 30min.With stove after power-off It is cooled to room temperature.
5th, part is tested.
Coating granularity is 300 mesh after cuprous oxide semi-conducting material is prepared；974 DEG C~1012 DEG C of softening temperature；Line expands Coefficient (6.8~7.6) × 1/ DEG C of 10-6 (25 DEG C~1000 DEG C)；Insulaion resistance is less than 0.3M Ω；Normality minimum discharge voltage ＜ 850V, the gentle minimum discharge voltage ＜ 900V of pressure of oil dripping.

Claims (2)

  1. A kind of 1. cuprous oxide semiconductor ceramic material, it is characterised in that the composition of the cuprous oxide semiconductor ceramic material Composition includes cupric oxide, copper powder, di-iron trioxide, chrome green, silver nitrate, Mo Laishi, quartz sand, spinelle；Wherein oxygen The ratio for changing copper is 25%~39.8%, the ratio of copper powder is 15%~25.4%, the ratio of di-iron trioxide be 0.5%~ 0.8%th, the ratio of chrome green is 5%~9%, the ratio of silver nitrate is 5%~7.5%, Mo Laishi ratio be 5%~ 7%th, the ratio of quartz sand be 1%~5.5%, the ratio of spinelle be 1%~5%.
  2. 2. the preparation method of a kind of cuprous oxide semiconductor ceramic material according to claim 1, it is characterised in that described Method takes following steps：
    1) to the raw material point of cupric oxide, copper powder, di-iron trioxide, chrome green, silver nitrate, Mo Laishi, quartz sand, spinelle Calcining pretreatment is not carried out, is sieved；
    2) material after sieving is weighed respectively, batch mixing so that in mixed material the ratio of cupric oxide be 25%~ 39.8%, the ratio of copper powder is 15%~25.4%, the ratio of di-iron trioxide is 0.5%~0.8%, the ratio of chrome green Example is 5%~9%, the ratio of silver nitrate is 5%~7.5%, Mo Laishi ratio is 5%~7%, the ratio of quartz sand is 1%~5.5%, the ratio of spinelle is 1%~5%, and mixed material is added in alumina porcelain ball grinder；
    3) it is not more than 0.7 according to coefficient, by mixed material, ceramic grinding ball, absolute ethyl alcohol according to 1:2:0.7 ratio Example is added in alumina porcelain ball grinder；
    4) ball milling is after 36~72 hours, the mixture sieving after ball milling；It is and stand-by after being aged 24~48 hours.
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060205197A1 (en) * 2005-03-09 2006-09-14 Siltron Inc. Compound semiconductor devices and methods of manufacturing the same
CN101355031A (en) * 2008-09-05 2009-01-28 北京工业大学 Method for preparing p-type transparent oxide semiconductor CuCrO2 film material
US8114766B1 (en) * 2005-09-19 2012-02-14 Renesas Electronics Corporation Method for manufacturing semiconductor device
CN102357659A (en) * 2011-07-27 2012-02-22 西安交通大学 Preparation method of Cu-Cu2O heterogenous junction
CN102410124A (en) * 2010-09-21 2012-04-11 成都泛华航空仪表电器有限公司 Highly reliable cuprous oxide semiconductor sparking plug sealing method
CN104150522A (en) * 2014-05-14 2014-11-19 江苏泰禾金属工业有限公司 Method for preparing cuprous oxide by using dry process

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060205197A1 (en) * 2005-03-09 2006-09-14 Siltron Inc. Compound semiconductor devices and methods of manufacturing the same
US8114766B1 (en) * 2005-09-19 2012-02-14 Renesas Electronics Corporation Method for manufacturing semiconductor device
CN101355031A (en) * 2008-09-05 2009-01-28 北京工业大学 Method for preparing p-type transparent oxide semiconductor CuCrO2 film material
CN102410124A (en) * 2010-09-21 2012-04-11 成都泛华航空仪表电器有限公司 Highly reliable cuprous oxide semiconductor sparking plug sealing method
CN102357659A (en) * 2011-07-27 2012-02-22 西安交通大学 Preparation method of Cu-Cu2O heterogenous junction
CN104150522A (en) * 2014-05-14 2014-11-19 江苏泰禾金属工业有限公司 Method for preparing cuprous oxide by using dry process

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