CN107851624A - Power module substrate, power model circuit substrate and power model - Google Patents

Power module substrate, power model circuit substrate and power model Download PDF

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Publication number
CN107851624A
CN107851624A CN201680042924.5A CN201680042924A CN107851624A CN 107851624 A CN107851624 A CN 107851624A CN 201680042924 A CN201680042924 A CN 201680042924A CN 107851624 A CN107851624 A CN 107851624A
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China
Prior art keywords
power module
module substrate
resin layer
insulating resin
substrate according
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CN201680042924.5A
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CN107851624B (en
Inventor
望月俊佑
北川和哉
白土洋次
长桥启太
津田美香
马路哲
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Sumitomo Bakelite Co Ltd
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Sumitomo Bakelite Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
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    • H01L23/00—Details of semiconductor or other solid state devices
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    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
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    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3737—Organic materials with or without a thermoconductive filler
    • H—ELECTRICITY
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0313—Organic insulating material
    • H05K1/0353—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
    • H05K1/0373—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement containing additives, e.g. fillers
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    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
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    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
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    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
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  • Engineering & Computer Science (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Power Engineering (AREA)
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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
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  • Insulated Metal Substrates For Printed Circuits (AREA)

Abstract

The power module substrate (100) of the present invention includes metal substrate (101), the insulating resin layer (102) being arranged on metal substrate (101) and the metal level (103) being arranged on insulating resin layer (102).Insulating resin layer (102) includes thermosetting resin (A) and the inorganic filling material (B) being dispersed in thermosetting resin (A), frequency 1kHz, 100 DEG C~175 DEG C when the maximum of dielectric loss coefficient of insulating resin layer (102) be less than 0.030, and the change of relative dielectric constant turns to less than 0.10.

Description

Power module substrate, power model circuit substrate and power model
Technical field
The present invention relates to power module substrate, power model circuit substrate and power model.
Background technology
All the time, it is known to by insulated gate bipolar transistor (IGBT：Insulated Gate Bipolar Transistor) and the electro part carrying such as semiconductor element, resistance and the capacitor such as diode is in structure in circuit substrate Into power model.
These power models are applied to various equipment according to its withstanding voltage and current capacity.Especially from environment in recent years From the viewpoint of problem, propulsion energy-saving, use of these power models in various electricapparatus expands year by year.
Particularly with vehicle-mounted power control device, it is desirable to minimize, space saving and set power control unit In engine chamber.The environment harsh for temperature is high, temperature change is big etc. in engine chamber is, it is necessary to the big substrate of area of dissipation.For Such purposes, the further excellent metal base circuit substrate of thermal diffusivity attract attention.
For example, Patent Document 1 discloses mounting semiconductor element is used into insulating resin layer on the supporting masses such as lead frame By supporting mass and the power model Nian Jie with the heat sink of fin connection.
Prior art literature
Patent document
Patent document 1：Japanese Unexamined Patent Publication 2011-216619 publications
The content of the invention
Invention technical problems to be solved
But the insulating properties of such power model at high temperature is not abundant enough.Therefore, electronic unit is difficult to ensure that sometimes Insulating properties, the hydraulic performance decline of power model can be caused in this case.
For solving the means of technical problem
According to the present invention, there is provided a kind of power module substrate, it includes metal substrate, is arranged in said metal substrates Insulating resin layer and the metal level that is arranged on above-mentioned insulating resin layer, it is characterised in that：
Above-mentioned insulating resin layer includes thermosetting resin and the inorganic filling material being dispersed in above-mentioned thermosetting resin,
Frequency 1kHz, 100 DEG C~175 DEG C when above-mentioned insulating resin layer dielectric loss coefficient maximum be 0.030 Hereinafter, and the change of relative dielectric constant turns to less than 0.10.
In addition, according to the present invention, there is provided a kind of power model circuit substrate, it is characterised in that：By to above-mentioned power Module carries out circuit fabrication with the above-mentioned metal level of substrate and formed.
In addition, according to the present invention, there is provided a kind of power model, it is characterised in that including：
Above-mentioned power model circuit substrate；With
The electronic unit being arranged in above-mentioned power model circuit substrate.
Invention effect
In accordance with the invention it is possible to provide can realize the excellent power model of insulating reliability power module substrate and Power model circuit substrate and the excellent power model of insulating reliability.
Brief description of the drawings
Above-mentioned purpose and other objects, features and advantages by preferred embodiment described below and accompany it The following drawings will be further appreciated.
Fig. 1 is the sectional view of the power module substrate of one embodiment of the present invention.
Fig. 2 is the sectional view of the power model of one embodiment of the present invention.
Embodiment
Hereinafter, embodiments of the present invention are illustrated with reference to the accompanying drawings.In addition, in all of the figs, to identical structure Identical symbol is marked into important document, it describes appropriate omit to avoid repeating in detail.In addition, figure is synoptic diagram, with actual size Ratio is not consistent.In addition, "~" of number range is unless otherwise noted, then it represents that with up to following.
[power module substrate]
First, the power module substrate 100 of present embodiment is illustrated.Fig. 1 is one embodiment of the present invention Power module substrate 100 sectional view.
Power module substrate 100 includes metal substrate 101, the and of insulating resin layer 102 being arranged on metal substrate 101 The metal level 103 being arranged on insulating resin layer 102.
<Insulating resin layer>
Insulating resin layer 102 is the layer for metal level 103 to be adhered to metal substrate 101.
Insulating resin layer 102 includes thermosetting resin (A) and the inorganic filling material being dispersed in thermosetting resin (A) (B)。
In addition, the frequency 1kHz of insulating resin layer 102,100 DEG C~175 DEG C when the maximum of dielectric loss coefficient be Less than 0.030, preferably less than 0.025, especially preferably less than 0.018, and the change of relative dielectric constant turns to less than 0.10, Preferably less than 0.05.The change of relative dielectric constant turn to from 175 DEG C when the value of relative dielectric constant subtract 100 DEG C when phase To value obtained from the value of dielectric constant.The lower limit of the maximum of above-mentioned dielectric loss coefficient is not particularly limited, and is, for example, More than 0.010.The lower limit of the change of above-mentioned relative dielectric constant is not particularly limited, and for example, more than 0.01.
In addition, in the present embodiment, insulating resin layer 102 is to make to include thermosetting resin (A) and inorganic filling material (B) obtained from compositions of thermosetting resin (P) heat cure.That is, insulating resin layer 102 turns into the thermosetting for including heat cure The C-stage state of property resin (A).
Here, frequency 1kHz, 100 DEG C~175 DEG C when the maximum of dielectric loss coefficient represent insulating resin layer 102 The index of β relaxation.That is, the maximum of dielectric loss coefficient at 100 DEG C~175 DEG C is lower, represents that β relaxation is smaller.In addition, phase Change to dielectric constant represents the index of the temperature dependency of the insulating properties of insulating resin layer 102.That is, relative dielectric constant Change smaller, represent that the change of the insulating properties of insulating resin layer 102 as caused by temperature change is smaller.
Dielectric loss coefficient and relative dielectric constant can be determined by LCR testers.
Insulating resin layer 102 is arranged between metal substrate 101 and metal level 103, is promoted in power model from heating Heat transfer of the body to radiator.Thereby, it is possible to suppress the failure as caused by characteristic variations of semiconductor chip etc., so as to realize work( The raising of the stability of rate module.
Learnt according to the research of the present inventor, by improving the glass transition temperature of insulating resin layer 102, can certain Degree improves the insulating properties of power module substrate 100.But glass transition temperature is only improved, at high temperature, it can not also obtain To sufficient insulating properties.
Then, the result that the present inventor is furtherd investigate in view of the foregoing, it was found that the β of insulating resin layer 102 relaxes Henan is smaller, the further raising of the insulating properties at a high temperature of power module substrate 100.It is because β relaxation is got over to think its reason Low, the motion release of the conductive component in insulating resin layer 102 is more suppressed at high temperature.
When the motion release of conductive component is suppressed, the insulating resin layer as caused by rising temperature can be suppressed 102 insulating properties declines.Therefore, the power module substrate 100 of present embodiment can realize that the insulating properties under high temperature is excellent And the power model that insulating reliability is high.
The change of dielectric loss coefficient, relative dielectric constant during 100 DEG C of insulating resin layer 102~175 DEG C can lead to The preparation method for crossing the suitably species of each composition of regulation composition insulating resin layer 102, mixing ratio and insulating resin layer 102 To control.
In the present embodiment, especially as the change for controlling above-mentioned dielectric loss coefficient and relative dielectric constant Factor, the species of appropriate selection thermosetting resin (A) can be enumerated, to the addition of thermosetting resin (A) and inorganic filling material (B) Lacquer type organic coating carry out heating condition in Ageing Treatment and the Ageing Treatment etc..
In power module substrate 100, the extraction water obtained under the following conditions is divided by the chromatography of ions The total amount of ion in the insulating resin layer 102 analysed and measured is preferably 30, below 000ppm, more preferably 20,000ppm with Under.
Here, above-mentioned ion is selected from Li+、Na+、NH4 +、K+、Ca2+、Mg2+、F-、Cl-、NO2 2-、Br-、NO3 -、PO4 3-、 SO4 2-、(COO)2 2-、CH3COO-And HCOO-One or both of more than.
(condition)
40mL pure water is added to insulating resin layer (102) 2g of Freezing smashing, the hot water of 20 hours is carried out at 125 DEG C Extraction, obtain extracting water.
Total amount by above-mentioned ion is below above-mentioned higher limit, can make the insulation of the insulating resin layer 102 under high temperature Property further improves.By adjusting the amount of the ionic impurity in each composition for forming insulating resin layer 102, or work as and contain water Surface area small inorganic filling material (B) is selected when solving and generating inorganic filling material (B) of ion, insulating resin can be adjusted The total amount of above-mentioned ion in layer 102.
In power module substrate 100, pass through dynamic viscoelastic under conditions of 5 DEG C/min of programming rate, frequency 1Hz The glass transition temperature of the insulating resin layer 102 measured is preferably more than 175 DEG C, more preferably more than 190 DEG C.It is above-mentioned The higher limit of glass transition temperature is not particularly limited, for example, less than 300 DEG C.
Here, the glass transition temperature (Tg) of insulating resin layer 102 remove metal substrate 101 and metal level 103 it Afterwards, determined under conditions of 5 DEG C/min of programming rate, frequency 1Hz by DMA (Measurement of Dynamic Viscoelasticity).
When glass transition temperature is more than above-mentioned lower limit, the motion that can further suppress conductive component is released Put, therefore, it is possible to further suppress the decline of the insulating properties of insulating resin layer 102 as caused by rising temperature.As a result, The further excellent power model of insulating reliability can be realized.
Glass transition temperature can be by suitably adjusting the species for each composition for forming insulating resin layer 102, coordinating Ratio and the preparation method of insulating resin layer 102 control.
Insulating resin layer 102 was measured after 1 minute according to JIS K6911 with applying after voltage 1000V applies voltage 175 DEG C of specific insulation is preferably 1.0 × 108More than Ω m, more preferably 1.0 × 109More than Ω m, especially preferably 1.0×1010More than Ω m.The higher limit of 175 DEG C of specific insulation is not particularly limited, and for example, 1.0 × 1013Ω·m Below.
Here, the index of the insulating properties at a high temperature of 175 DEG C of specific insulation expression insulating resin layer 102.I.e. 175 DEG C Specific insulation it is higher, represent high temperature under insulating properties it is more excellent.
175 DEG C of specific insulation of insulating resin layer 102 can form insulating resin layer 102 by suitably adjusting The preparation method of the species of each composition, mixing ratio and insulating resin layer 102 controls.
In the present embodiment, especially as the factor of the specific insulation for controlling 175 DEG C, it can enumerate and suitably select Select thermosetting resin (A) species, timeliness is carried out to the lacquer type organic coating that with the addition of thermosetting resin (A) and inorganic filling material (B) Heating condition in processing and the Ageing Treatment etc..
The thickness of insulating resin layer 102 is suitably set according to purpose, but from mechanical strength and heat resistance can be realized Raising and by from electronic unit heat more effectively transmitted to metal substrate 101 from the viewpoint of, insulating resin layer 102 Thickness is preferably less than more than 40 μm 400 μm, is more entered from the balance of the overall thermal diffusivity of power module substrate 100 and insulating properties From the viewpoint of one step is excellent, the thickness of insulating resin layer 102 is preferably set as less than more than 100 μm 300 μm.
By the way that the thickness of insulating resin layer 102 is set to below above-mentioned higher limit, the thermal capacitance from electronic unit can be made Change places and be delivered to metal substrate 101.
In addition, by the way that the thickness of insulating resin layer 102 is set to more than above-mentioned lower limit, insulating resin layer can be passed through 102 fully alleviate the production of the thermal stress as caused by the coefficient of thermal expansion differences between metal substrate 101 and insulating resin layer 102 It is raw.Moreover, the insulating properties of power module substrate 100 improves.
Insulating resin layer 102 includes thermosetting resin (A) and the inorganic filling material being dispersed in thermosetting resin (A) (B)。
(thermosetting resin (A))
As thermosetting resin (A), the epoxy resin with dicyclopentadiene skeleton, the ring with biphenyl backbone can be enumerated Oxygen tree fat, the epoxy resin with adamantane framework, the epoxy resin with phenol aralkyl skeleton, with biphenyl aralkyl bone The epoxy resin of frame, the epoxy resin with naphthalene aralkyl skeleton and cyanate ester resin etc..
As thermosetting resin (A), a kind in these resins is can be used alone, and two or more can also be used.
By using such thermosetting resin (A), it is possible to increase the glass transition temperature of insulating resin layer 102, and And make frequency 1kHz, 100 DEG C~175 DEG C when dielectric loss coefficient and relative dielectric constant change reduce.
In thermosetting resin (A), from the viewpoint of further reduction dielectric loss coefficient, particularly preferably with bicyclic The epoxy resin of cyclopentadiene skeleton.
The content of the thermosetting resin (A) included in insulating resin layer 102, relative to the matter of insulating resin layer (102) 100 It is preferably more than 1 mass % below 30 mass %, more preferably more than 5 mass % below 28 mass % to measure %.When thermosetting tree When the content of fat (A) is more than above-mentioned lower limit, treatability improves, and easily forms insulating resin layer 102.Work as thermosetting resin (A) when content is below above-mentioned higher limit, the intensity and anti-flammability of insulating resin layer 102 further improve, insulating resin The thermal conductivity of layer 102 further improves.
(inorganic filling material (B))
As inorganic filling material (B), for example, can enumerate silica, aluminum oxide, boron nitride, aluminium nitride, silicon nitride and Carborundum etc..These can be used alone or two or more kinds may be used.
It is excellent from the viewpoint of the further thermal conductivity for improving insulating resin layer 102 as inorganic filling material (B) Elect as by making the primary particle aggegation of flakey boron nitride the secondary agglutinating particle that is formed.
By the secondary agglutinating particle for forming the aggegation of flakey boron nitride, such as can be by utilizing spray drying Method etc. makes to be fired it to be formed after the aggegation of flakey boron nitride.Firing temperature is, for example, 1200~2500 DEG C.
So, when secondary agglutinating particle obtained from use makes flakey boron nitride sintered, from raising thermosetting resin (A) from the viewpoint of the dispersiveness of the inorganic filling material (B) in, particularly preferably have bicyclic penta as thermosetting resin (A) The epoxy resin of diene skeleton.
Average grain diameter by the secondary agglutinating particle for forming the aggegation of flakey boron nitride is for example preferably more than 5 μm Less than 180 μm, more preferably less than more than 10 μm 100 μm.Thereby, it is possible to realize that the balance of thermal conductivity and insulating properties is further Excellent insulating resin layer 102.
The average major diameter for forming the primary particle of the flakey boron nitride of above-mentioned secondary agglutinating particle be preferably 0.01 μm with Upper less than 20 μm, more preferably less than more than 0.1 μm 10 μm.Thereby, it is possible to realize that the balance of thermal conductivity and insulating properties more enters one Walk excellent insulating resin layer 102.
The average major diameter can be determined by electron micrograph.For example, determined according to following steps.First, Secondary agglutinating particle is cut off with makes sample with slicer etc..Then, it is amplified to by scanning electron microscope, several of shooting The cross sectional photograph of thousands of times of secondary agglutinating particle.Then, arbitrary secondary agglutinating particle is selected, flakey nitrogen is determined from photo Change the major diameter of the primary particle of boron.Now, major diameter is determined to the primary particle of more than 10, using their average value as average Major diameter.
The content of the inorganic filling material (B) included in insulating resin layer 102, relative to the matter of insulating resin layer (102) 100 % is measured, preferably more than 50 mass % below 95 mass %, more preferably more than 55 mass % below 88 mass %, particularly preferably For below the mass % of more than 60 mass % 80.
By the way that the content of inorganic filling material (B) is set to more than above-mentioned lower limit, insulation tree can be more effectively realized The raising of the thermal conductivity and mechanical strength of lipid layer 102.On the other hand, by the way that the content of inorganic filling material (B) is set into above-mentioned Below higher limit, it is possible to increase the film forming and operability of compositions of thermosetting resin (P), make the thickness of insulating resin layer 102 Uniformity it is further good.
From the viewpoint of the further thermal conductivity for improving insulating resin layer 102, the inorganic fill material of present embodiment Expect that (B) also includes with the flakey boron nitride of the secondary agglutinating particle of composition once preferably in addition to above-mentioned secondary agglutinating particle The primary particle of the different flakey boron nitride of particle.The average major diameter of the primary particle of the flakey boron nitride is preferably 0.01 Less than 20 μm more than μm, more preferably less than more than 0.1 μm 10 μm.
The further excellent insulating resin layer 102 of balance thereby, it is possible to realize thermal conductivity and insulating properties.
(curing agent (C))
When using epoxy resin as thermosetting resin (A), insulating resin layer 102 preferably also includes curing agent (C).
As curing agent (C), can use be selected from curing catalysts (C-1) and phenols curing agent (C-2) a kind with On.
As curing catalysts (C-1), such as can enumerate：Zinc naphthenate, cobalt naphthenate, tin octoate, cobalt octoate, biacetyl The organic metal salt such as acetone cobalt (II) and praseodynium cobalt (III)；Triethylamine, tri-n-butylamine and Isosorbide-5-Nitrae-diazabicyclo The tertiary amines such as [2.2.2] octane；2- phenyl -4-methylimidazole, 2-ethyl-4-methylimidazole, 2,4- diethyl imidazoliums, 2- benzene The imidazoles such as base -4- methyl -5- hydroxy imidazoles and 2- phenyl -4,5- bishydroxymethyl imidazoles；Triphenylphosphine, three p-methylphenyls The organic phosphines such as phosphine, tetraphenyl squama tetraphenyl borate salts, triphenylphosphine triphenylborane and 1,2- pairs-(diphenylphosphino) ethane Compound；The phenolic compounds such as phenol, bisphenol-A and nonyl phenol；Organic acids such as acetic acid, benzoic acid, salicylic acid and p-methyl benzenesulfonic acid etc.；Or Their mixture.As curing catalysts (C-1), a kind including the derivative of these materials can be also used alone, Also can and with two or more including the derivative of these materials.
The content of the curing catalysts (C-1) included in insulating resin layer 102 is not particularly limited, relative to insulating resin (102) 100 mass % of layer, preferably more than 0.001 mass % below 1 mass %.
In addition, as phenols curing agent (C-2), can enumerate：Phenol resol resins, cresol novolac resin, naphthalene Phenol novolac resin, amino triazine novolac resin, novolac resin and triphenyl methane type phenol novolacs tree The novolak phenolics such as fat；The modified phenolic resin such as terpene modified phenolic resin and dicyclic pentylene modified phenolic resin Fat；Phenol aralkyl resin with phenylene skeleton and/or biphenylene skeleton and with phenylene skeleton and/or sub- biphenyl The aralkyl-type resin such as naphthols aralkyl resin of base skeleton；The bisphenol compound such as bisphenol-A and Bisphenol F；Resol type phenol resin Deng these can be used alone or two or more kinds may be used.
Among these, from the viewpoint of improving glass transition temperature and reducing linear expansion coefficient, preferred phenolic cure Agent (C-2) is novolak phenolics or resol type phenol resin.
The content of phenols curing agent (C-2) is not particularly limited, relative to the mass % of insulating resin layer (102) 100, preferably For below the mass % of more than 1 mass % 30, more preferably more than 5 mass % below 20 mass %.
(coupling agent (D))
Insulating resin layer 102 can also include coupling agent (D).
Coupling agent (D) can improve thermosetting resin (A) and the wetability at the interface of inorganic filling material (B).
As coupling agent (D), usually used any coupling agent can be used, specifically preferably uses and is selected from epoxy radicals 1 in silane coupler, cationic silane coupling agent, amino silicane coupling agent, titante coupling agent and silicone oil type coupling agent The coupling agent of the kind above.
The addition of coupling agent (D) depends on the specific surface area of inorganic filling material (B), therefore is not particularly limited, phase For the mass parts of inorganic filling material (B) 100, preferably more than 0.1 mass parts below 10 mass parts, especially preferably 0.5 matter Measure more than part below 7 mass parts.
(phenoxy resin (E))
Insulating resin layer 102 can also include phenoxy resin (E).By comprising phenoxy resin (E), can more enter one Step improves the flexing resistance of power module substrate 100.
In addition, the modulus of elasticity by the way that insulating resin layer 102 comprising phenoxy resin (E), can be reduced, it is possible to increase work( The stress relaxation forces of rate module substrate 100.
In addition, when comprising phenoxy resin (E), can suppress to produce space because viscosity rises and causes mobility to reduce Deng.In addition, it is possible to increase the adaptation between insulating resin layer 102 and metal substrate 101, metal level 103.Pass through these association Same effect, it can further improve the insulating reliability of power model.
As phenoxy resin (E), such as the phenoxy resin with bisphenol backbone, the benzene oxygen with naphthalene skeleton can be enumerated Base resin, the phenoxy resin with anthracene skeleton and phenoxy resin with biphenyl backbone etc..In addition, also can use have The phenoxy resin of the structure of these a variety of skeletons.
The content of phenoxy resin (E) is more than 3 mass % 10 for example relative to the mass % of insulating resin layer (102) 100 Below quality %.
(other compositions)
In the range of the effect of the present invention is not damaged, antioxidant and levelling agent can be included in insulating resin layer 102 Deng.
Insulating resin layer 102 can for example make as described below.
First, above-mentioned each composition is added in solvent, obtains the compositions of thermosetting resin (P) of paint-like.In this reality Apply in mode, for example, after addition thermosetting resin (A) etc. produces lacquer type organic coating in a solvent, nothing is added into the lacquer type organic coating Machine packing material (B) is simultaneously kneaded with three-roller etc., thus, it is possible to obtain compositions of thermosetting resin (P).Thereby, it is possible to make Inorganic filling material (B) is spreaded more evenly across in thermosetting resin (A).
It is not particularly limited as above-mentioned solvent, methyl ethyl ketone, methylisobutylketone, propylene glycol monomethyl ether and ring can be enumerated Hexanone etc..
Then, Ageing Treatment is carried out to compositions of thermosetting resin (P).Thereby, it is possible to make resulting insulating resin layer 102 frequency 1kHz, 100 DEG C~175 DEG C when dielectric loss coefficient and relative dielectric constant change reduce.Speculate that its is main Reason is, by Ageing Treatment, inorganic filling material (B) is lifted to the compatibility of thermosetting resin (A) etc..Ageing Treatment example If carried out under conditions of 30~80 DEG C, 12~24 hours.
Then, compositions of thermosetting resin (P) is shaped to sheet, to form insulating resin layer 102.In present embodiment In, for example, being coated with base material after the compositions of thermosetting resin (P) of paint-like, carrying out heat treatment to it makes its drying, thus Insulating resin layer 102 can be obtained.As base material, such as metal substrate 101, metal level 103 can be enumerated, form strippable load The metal foil of body material etc..In addition, for make compositions of thermosetting resin (P) dry heat treatment for example 80~150 DEG C, 5 Minute~carried out under conditions of 1 hour.
<Metal substrate>
Metal substrate 101 has the function that to radiate to the heat accumulated in power module substrate 100.Metal substrate As long as the metal substrate of 101 thermal diffusivities is just not particularly limited, for example, copper base, copper alloy substrate, aluminium base or aluminium close Gold base, preferably copper base or aluminium base, more preferably copper base.By using copper base or aluminium base, metal substrate can be made 101 thermal diffusivity is good.
As long as not damaging the purpose of the present invention, the thickness of metal substrate 101 can suitably be set.
The higher limit of the thickness of metal substrate 101 is, for example, below 20.0mm, preferably below 5.0mm.By using this The metal substrate 101 of thickness below numerical value, the slimming overall as power module substrate 100 can be carried out.In addition, energy Enough improve the sharp processing of power module substrate 100 and cut out the processability in processing etc..
In addition, the lower limit of the thickness of metal substrate 101 is, for example, more than 0.1mm, preferably more than 1.0mm, further Preferably more than 2.0mm.By using the metal substrate 101 more than numerical value, it is possible to increase as power module substrate 100 Overall thermal diffusivity.
<Metal level>
Metal level 103 is arranged on insulating resin layer 102, to carry out the layer of circuit fabrication.
As the metal of the composition metal level 103, such as can enumerate selected from copper, copper alloy, aluminium, aluminium alloy, nickel, iron, tin Deng one or both of more than.Among these, as the metal for forming metal level 103, preferably copper or aluminium, it is especially preferably Copper.By using copper or aluminium, the circuit fabrication of metal level 103 can be made good.
The lower limit of the thickness of metal level 103 is, for example, more than 0.01mm, preferably more than 0.10mm, more preferably More than 0.25mm.When being more than such numerical value, even needing the purposes of high current, also it is capable of the hair of suppression circuit pattern Heat.
In addition, the higher limit of the thickness of metal level 103 is, for example, below 2.0mm, preferably below 1.5mm is further excellent Elect below 1.0mm as.When being below such numerical value, it is possible to increase circuit fabrication, further, it is possible to realize whole as substrate The slimming of body.
Metal level 103 can use the metal foil that can be obtained with tabular, can also use the gold that can be obtained with web-like Belong to paper tinsel.
<The manufacture method of power module substrate>
Power module substrate 100 as described above can for example manufacture as described below.
First, it is coated with a support material after the compositions of thermosetting resin (P) of paint-like, carrying out heat treatment to it makes it Dry, be consequently formed resin bed, obtain the carrier material of tape tree lipid layer.
Carrier material is, for example, the resin films such as polyethylene terephthalate (PET)；Metal foils such as copper foil etc..Carrier The thickness of material is, for example, 10~500 μm.
Then, in a manner of being contacted by the face of the resin bed side of the carrier material of tape tree lipid layer with the surface of metal substrate 101 The carrier material of tape tree lipid layer is laminated on metal substrate 101.Then, carry out pressurization and/or heating using stamping machine etc. and will set Lipid layer is bonded with B-stage state.
Then, carrier material is removed from the resin bed of B-stage state, in the forming metal layer on surface of the resin bed exposed 103, obtain layered product.
In addition, when using metal foil as carrier material, can be by the carrier material directly as metal level 103.That is, In this case, after the metal level 103 of tape tree lipid layer is obtained, by the way that the metal level 103 of tape tree lipid layer is laminated in into metal On substrate 101, the layered product as target is obtained.
Then, pressurization and/or heating is carried out to layered product by using stamping machine etc., resin bed is heating and curing and form insulation Resin bed 102, obtain power module substrate 100.
In addition, in above-mentioned, the manufacture method of the carrier material of laminated belt resin bed on metal substrate 101 is carried out Illustrate, but in the present embodiment, also can on metal level 103 laminated belt resin bed carrier material, remove carrier material After material, engaged with metal substrate 101.
In addition, when using metal foil as carrier material, and during by the metal foil directly as metal level 103, metal level 103 can be from the metal foil of roller extrusion, the preferably copper foil or aluminium foil from roller extrusion.
By so setting, the raising of production efficiency can be realized.
[power model circuit substrate]
To resulting power module substrate 100, by the way that metal level 103 is etched into defined pattern etc. to carry out electricity Road processes, and can obtain power model circuit substrate.
Alternatively, it is also possible to form solder mask 10 (reference picture 2) in outermost layer, and make connecting electrode by exposing, developing Portion exposes, and enables to install electronic unit.
[power model]
Then, the power model 11 of present embodiment is illustrated.Fig. 2 is the power mould of one embodiment of the present invention The sectional view of block 11.
By present embodiment power model with electronic unit is set in circuit substrate, power model can be obtained 11。
In the present embodiment, power model 11 is semiconductor device, for example, power semiconductor arrangement, LED illumination dress Put, DC-to-AC converter.
Here, DC-to-AC converter is (having inverse conversion function) device that alternating electromotive force is electrically produced from direct current power. Power semiconductor arrangement has the spy of high withstanding voltage, high current, high speed/high frequency compared with the semiconductor element of routine Sign, commonly known as power device, can enumerate and be equipped with commutation diode, power transistor, power MOSFET, insulated gate bipolar The device of the electronic units such as transistor npn npn (IGBT), IGCT, gate level turn-off thyristor (GTO) and three terminal bidirectional alternating-current switch Part.
Electronic unit is semiconductor element, resistance, the capacitors such as insulated gate bipolar transistor, diode, IC chip etc. Various heater elements.Power module substrate 100 plays a role as radiator.
Here, reference picture 2 illustrates to an example of power model 11.
In the power model 11 of present embodiment, via bonding on the metal level 103a of power model circuit substrate Layer 3 is equipped with IC chip 2.IC chip 2 turns on via closing line 7 with metal level 103b.
IC chip 2, closing line 7 and metal level 103a, 103b are sealed by encapsulant 6.
In power model 11, chip capacitor 8 and chip-resistance 9 are equipped with metal level 103.These chip capacities Device 8 and chip-resistance 9 can use known part.
The metal substrate 101 of power model 11 is connected via thermal conductive greases 4 with fin 5.That is, can be by IC chip 2 Caused heat is via adhesive linkage 3, metal level 103a, insulating resin layer 102, metal substrate 101 and thermal conductive greases 4 to fin 5 conduct and carry out except heat.
The present invention is not limited to foregoing embodiment, can realize the deformation in the range of the purpose of the present invention, change It is good etc. to be contained in the present invention.
Embodiment
Hereinafter, by embodiment and comparative example, the present invention will be described, but the present invention is not limited to this.In addition, In embodiment, on part, mass parts are meant that unless otherwise specified.In addition, each thickness is represented with average film thickness.
(making of aggegation boron nitride)
By boric acid melamine and flakey boron nitride powder (average major diameter：15 μm) mixture is obtained by mixing, by institute Obtained mixture is added in polyacrylic acid aqueous ammonium, mixes 2 hours and is prepared for spraying slurry.Then, this is starched Material supply to sponging granulator, by the rotating speed 15000rpm of sprayer, 200 DEG C of temperature, slurry quantity delivered 5ml/min bar Sprayed under part, made composite particles.Then, by answering in a nitrogen atmosphere, under conditions of 2000 DEG C resulting Close particle to be fired, obtain the aggegation boron nitride that average grain diameter is 80 μm.
Here, the average grain diameter of aggegation boron nitride, is by laser diffraction formula particle size distribution device (Co., Ltd.'s hole Make institute (HORIBA, Ltd.) manufacture, LA-500) size distribution of particle is determined with volume reference, take its median particle diameter (D50)。
(making of power module substrate)
In embodiment 1~7 and comparative example 1~2, power module substrate has been made as described below.
First, according to table 1 shown in cooperation, using thermosetting resin and curing agent addition in the methyl ethyl ketone as solvent In, it is stirred and has obtained the solution of compositions of thermosetting resin.Then, inorganic filling material is added in the solution And after being pre-mixed, be kneaded with three-roller, obtain the thermosetting of paint-like for making inorganic filling material dispersed Resin combination.Then, resulting compositions of thermosetting resin has been carried out at timeliness under conditions of 60 DEG C, 15 hours Reason.Then, using scraper plate method in copper foil (thickness 0.07mm, The Furakawa Electric Co., Ltd. (Furukawa Electric Co., Ltd.) manufacture, GTS-MP paper tinsels) on be coated with compositions of thermosetting resin after, the heat treatment using 100 DEG C, 30 minutes makes It is dried so as to produce the copper foil of tape tree lipid layer.
Then, the thick copper coin (tough pitch copper) of the copper foil of resulting tape tree lipid layer and 3.0mm is bonded, with vacuum stamping machine with Punching press 100kg/cm2Punching press is carried out under conditions of 180 DEG C, 40 minutes, has obtained power module substrate (insulating resin layer 102 thickness：200μm).
In addition, the details of each composition in table 1 is as described below.
In comparative example 3, in addition to not carrying out Ageing Treatment this point to compositions of thermosetting resin, with embodiment 1 has similarly made power module substrate.
In addition, the details of each composition in table 1 is as described below.
(thermosetting resin (A))
Epoxy resin 1：Epoxy resin (XD-1000, Nippon Kayaku K. K with dicyclopentadiene skeleton (Nippon Kayaku Co., Ltd.s) manufactures)
Epoxy resin 2：Epoxy resin (YX-4000, Mitsubishi chemical Co., Ltd (Mitsubishi with biphenyl backbone Chemical Corporation) manufacture)
Epoxy resin 3：Epoxy resin (E201, Idemitsu Kosen Co., Ltd. (Idemitsu with adamantane framework Kosan Co., Ltd.s) manufacture)
Epoxy resin 4：Epoxy resin (NC-2000-L, Nippon Kayaku K. K's system with phenol aralkyl skeleton Make)
Epoxy resin 5：Epoxy resin (NC-3000, Nippon Kayaku K. K's manufacture) with biphenyl aralkyl skeleton
Epoxy resin 6：Epoxy resin (NC-7000, Nippon Kayaku K. K's manufacture) with naphthalene aralkyl skeleton
Epoxy resin 7：Bisphenol f type epoxy resin (830S, big Japanese ink Co., Ltd. (DIC Corporation) system Make)
Epoxy resin 8：Bisphenol A type epoxy resin (828, Mitsubishi chemical Co., Ltd's manufacture)
Cyanate ester resin 1：Phenol novolak type cyanate ester resin (PT-30, Lonza Japan Ltd. manufactures)
(curing catalysts C-1)
Curing catalysts 1：2- phenyl -4,5- bishydroxymethyl imidazoles (2PHZ-PW, Shikoku Chem (Shikoku Chemicals Corporation) is manufactured)
Curing catalysts 2：Triphenylphosphine (Hokko Chemical Industry Co., Ltd. (HOKKO CHEMICAL INDUSTRY CO., LTD.) manufacture)
(curing agent C-2)
Phenols curing agent 1：Triphenyl methane type phenol resol resins (MEH-7500, bright and chemical conversion Co., Ltd. (MEIWA PLASTIC INDUSTRIES, LTD.) is manufactured)
(inorganic filling material (B))
Packing material 1：The aggegation boron nitride produced by above-mentioned making example
(measure of the change of dielectric loss coefficient and relative dielectric constant)
The change of the dielectric loss coefficient and relative dielectric constant of insulating resin layer is determined as described below.First, from Resulting power module substrate stripped metal sheets and metal level and obtained insulating resin layer.
φ 18mm main electrode is formed on resulting insulating resin layer using conductive paste.In addition, form φ 26mm guard electrode so that be 1mm between main electrode and guard electrode.In addition, the face shape in the side opposite with main electrode Into φ 26mm to electrode.Anjelen Sci. ＆ Tech. Inc (Agilent Technologies) is used to manufacture as experimental rig LCR test set (precision LCR meter) HP-4284A.Effective voltage is 1V, and frequency is fixed as into 1kHz, Dielectric loss coefficient and relative dielectric constant are determined respectively in the range of 30 DEG C~200 DEG C, when calculating 100 DEG C~175 DEG C The maximum of dielectric loss coefficient and the change of relative dielectric constant.
(Tg (glass transition temperature) measure)
The glass transition temperature of insulating resin layer is determined as described below.First, used from resulting power model Strippable substrate metallic plate and metal level and obtained insulating resin layer.
Then, institute is determined under conditions of 5 DEG C/min of programming rate, frequency 1Hz by DMA (Measurement of Dynamic Viscoelasticity) The glass transition temperature (Tg) of obtained insulating resin layer.
(measure of the total amount of ion)
The total amount of the ion in insulating resin layer is determined as described below.First, from resulting power model base Plate stripped metal sheets and metal level and obtained insulating resin layer.Then, resulting insulating resin layer Freezing smashing is made.To The insulating resin layer 2g additions 40mL of Freezing smashing pure water, in the 125 DEG C of hot water for carrying out 20 hours extractions, is extracted Water.
To the extraction water, determined using DIONEX ICS-3000 types, ICS-2000 types, DX-320 types ion chromatography apparatus It is selected from Li+、Na+、NH4 +、K+、Ca2+、Mg2+、F-、Cl-、NO2 2-、Br-、NO3 -、P04 3-、SO4 2-、(COO)2 2-、CH3COO-With HCOO-One or both of more than ion total amount.
Here, importing test liquid and standard liquid in ion chromatography apparatus, it is dense that each ion is obtained by calibration curve method Degree, calculates the released ion amount from sample.
(measure of specific insulation at 25 DEG C and 175 DEG C)
The specific insulation of insulating resin layer is determined as described below.First, from resulting power module substrate Stripped metal sheets and metal level and obtained insulating resin layer.Then, according to JIS K6911, ULTRA HIGH are used After RESISTANCE METER R8340A (ADC CORPORATION manufactures) are to apply voltage 1000V application voltages, at 1 minute The specific insulation of insulating resin layer obtained by determining afterwards.
In addition, main electrode is fabricated to φ 25.4mm toroidal using conductive paste.Guard electrode is not made now.Separately Outside, formd in the face of the side opposite with main electrode φ 26mm to electrode.
(insulating reliability evaluation)
For embodiment 1~7 and comparative example 1~3, the insulating reliability of power model is carried out as described below respectively Evaluation.First, the power model shown in Fig. 2 is produced using power module substrate.Igbt chip has been used as IC chip. Cu closing line has been used as closing line.Then, applied using the power model in 85 DEG C of temperature, humidity 85%, exchange Continuous wet middle insulaion resistance is evaluated under conditions of voltage 1.5kV.Wherein, by resistance value 106Below Ω is set to failure. Metewand is as described below.
◎◎：There is no failure within more than 300 hours
◎：200 hours faulty less than 300 hours
○：150 hours faulty less than 200 hours
△：100 hours faulty less than 150 hours
×：It is faulty less than 100 hours
The maximum of dielectric loss coefficient when having used 100 DEG C~175 DEG C and the change of relative dielectric constant are in this hair The power model of the embodiment 1~7 of power module substrate in bright scope, insulating reliability are excellent.
On the other hand, the maximum of dielectric loss coefficient and the change of relative dielectric constant when having used 100 DEG C~175 DEG C Change the power model of the comparative example 1~3 of the power module substrate outside the scope of the present invention, insulating reliability is poor.
The application advocates the priority based on Japanese publication Patent filed in 23 days July in 2015 2015-146051, its Entire disclosure is applied in this specification.

Claims (17)

1. a kind of power module substrate, it includes metal substrate, the insulating resin layer being arranged on the metal substrate and set The metal level on the insulating resin layer is put, the power module substrate is characterised by：
The insulating resin layer includes thermosetting resin and the inorganic filling material being dispersed in the thermosetting resin,
Frequency 1kHz, 100 DEG C~175 DEG C when the insulating resin layer dielectric loss coefficient maximum be less than 0.030, And the change of relative dielectric constant turns to less than 0.10.
2. power module substrate according to claim 1, it is characterised in that：
The maximum of the dielectric loss coefficient is less than 0.025, and the change of the relative dielectric constant turns to less than 0.05.
3. power module substrate according to claim 1 or 2, it is characterised in that：
The extraction water obtained under the following conditions is analyzed in the insulating resin layer to measure by the chromatography of ions The total amount of ion be 30, below 000ppm,
The ion is selected from Li+、Na+、NH4 +、K+、Ca2+、Mg2+、F-、Cl-、NO2 2-、Br-、NO3 -、PO4 3-、SO4 2-、 (COO)2 2-、CH3COO-And HCOO-One or both of more than,
(condition)
40mL pure water is added to the insulating resin layer 2g of Freezing smashing, extracted in the hot water that 125 DEG C carry out 20 hours, Obtain extracting water.
4. power module substrate according to any one of claim 1 to 3, it is characterised in that：
The thermosetting resin be selected from the epoxy resin with dicyclopentadiene skeleton, the epoxy resin with biphenyl backbone, Epoxy resin with adamantane framework, the epoxy resin with phenol aralkyl skeleton, the ring with biphenyl aralkyl skeleton It is more than one or both of oxygen tree fat, the epoxy resin with naphthalene aralkyl skeleton and cyanate ester resin.
5. power module substrate according to any one of claim 1 to 4, it is characterised in that：
By Measurement of Dynamic Viscoelasticity and the insulating resin layer that measures under conditions of 5 DEG C/min of programming rate, frequency 1Hz Glass transition temperature be more than 175 DEG C.
6. power module substrate according to any one of claim 1 to 5, it is characterised in that：
The inorganic filling material is the secondary agglutinating particle being made up of the primary particle of flakey boron nitride.
7. power module substrate according to claim 6, it is characterised in that：
The average grain diameter of the secondary agglutinating particle is less than more than 5 μm 180 μm.
8. the power module substrate according to claim 6 or 7, it is characterised in that：
The average major diameter for forming the primary particle of the secondary agglutinating particle is less than more than 0.01 μm 20 μm.
9. power module substrate according to any one of claim 1 to 8, it is characterised in that：
The content of the inorganic filling material is the mass % of more than 50 mass % 95 relative to the mass % of insulating resin layer 100 Below.
10. power module substrate according to any one of claim 1 to 9, it is characterised in that：
According to JIS K6911, to apply 175 DEG C of the insulation tree after voltage 1000V applies voltage, measured after 1 minute The specific insulation of lipid layer is 1.0 × 108More than Ω m.
11. power module substrate according to claim 10, it is characterised in that：
The specific insulation is 1.0 × 109More than Ω m.
12. the power module substrate according to any one of claim 1 to 11, it is characterised in that：
The thickness of the metal level is more than 0.25mm below 1.0mm.
13. the power module substrate according to any one of claim 1 to 12, it is characterised in that：
The metal for forming the metal level includes copper.
14. the power module substrate according to any one of claim 1 to 13, it is characterised in that：
The thickness of the metal substrate is more than 2.0mm below 5.0mm.
15. the power module substrate according to any one of claim 1 to 14, it is characterised in that：
The metal substrate is copper base.
A kind of 16. power model circuit substrate, it is characterised in that：
By the metal level of the power module substrate any one of claim 1 to 15 is carried out circuit fabrication and Formed.
A kind of 17. power model, it is characterised in that including：
Power model circuit substrate described in claim 16；With
The electronic unit being arranged in the power model circuit substrate.
CN201680042924.5A 2015-07-23 2016-07-20 Substrate for power module, circuit substrate for power module, and power module Active CN107851624B (en)

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DE112016003327B4 (en) 2022-08-18
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US20190341331A1 (en) 2019-11-07
US10720375B2 (en) 2020-07-21
JP6281663B2 (en) 2018-02-21
WO2017014237A1 (en) 2017-01-26

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