CN107845688A - Solar cell hollow out circuit and solar cell display device - Google Patents
Solar cell hollow out circuit and solar cell display device Download PDFInfo
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- CN107845688A CN107845688A CN201610829685.XA CN201610829685A CN107845688A CN 107845688 A CN107845688 A CN 107845688A CN 201610829685 A CN201610829685 A CN 201610829685A CN 107845688 A CN107845688 A CN 107845688A
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 54
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 238000002955 isolation Methods 0.000 claims description 91
- 239000000463 material Substances 0.000 claims description 13
- 239000011521 glass Substances 0.000 claims description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 6
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims description 5
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 3
- 239000013081 microcrystal Substances 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 206010070834 Sensitisation Diseases 0.000 claims 1
- 238000009738 saturating Methods 0.000 claims 1
- 230000008313 sensitization Effects 0.000 claims 1
- 230000000007 visual effect Effects 0.000 abstract description 2
- 238000000034 method Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 240000001439 Opuntia Species 0.000 description 5
- 238000010276 construction Methods 0.000 description 5
- 230000005611 electricity Effects 0.000 description 4
- 230000005622 photoelectricity Effects 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000007773 negative electrode material Substances 0.000 description 2
- 239000007774 positive electrode material Substances 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910018095 Ni-MH Inorganic materials 0.000 description 1
- 229910018477 Ni—MH Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02021—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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Abstract
The present invention is to provide a kind of solar cell hollow out circuit and solar cell display device.Solar cell hollow out circuit includes a substrate, one first conductive layer, a photoelectric conversion layer and one second conductive layer.First conductive layer, photoelectric conversion layer and the second conductive layer are sequentially laminated on substrate and form a hollow circle zone respectively, and hollow circle zone defines an opening in center on substrate.In an embodiment, a display panel is capped on the opening of center on substrate, to show that word or pattern form solar cell display device in opening.Whereby, through electric power needed for the offer of solar cell hollow out circuit, usage time can be extended, and through the positive and negative electrode joint configuration mode of solar cell hollow out circuit, larger visual range can be obtained in show message simultaneously.
Description
Technical field
The present invention is on a kind of solar cell circuit and display device;It is particularly sayed, the present invention is on one kind
Solar cell hollow out circuit and solar cell display device.
Background technology
Typically in the small-sized display device taken, be often equipped with just like the chemical fuel cells such as lithium battery, Ni-MH battery with
Electric power needed for offer.Used for a long time however, the electricity of these batteries is often unable to supply.Furthermore no doubt it can fill at present
Electric-type battery, but its electricity is still limited, and it is inconvenient for use to need multiple cycle charging still to cause.It is existing also to develop such as portable power source
Product, but it still needs to charge in advance, and it need to additionally be carried and bulkiness is also unfavorable for using.Developed then on current market
By solar cell combination display device, it is intended to which, using daylight continuously or bright indoor light, solving electricity can not
The problem of lasting.
Above-mentioned solar cell, it is basic to include a photoelectric conversion layer that can be used for for luminous energy being changed into electric energy, and respectively
It is formed at photoelectric conversion layer top surface and the electrode of bottom surface.Incident light is after photoelectric conversion layer absorbs and is converted to electric energy, to pass through light
Electric conversion layer top surface and two electrodes of bottom surface form interior circuit loop, are now connected again with this interior circuit loop, you can transmission electricity
Energy.Actually often multiple solar cells are connected to form solar module.Referring to Fig. 1 to Fig. 3.Fig. 1 is to paint
Show the schematic diagram of a known solar cells module 100;Fig. 2 is the sectional view of solar module 100 for illustrating Fig. 1;Fig. 3 is
Illustrate the circuit diagram during Fig. 1 use of solar module 100.In sequentially stacking forms a positive electrode respectively on substrate 101
102, one photoelectric conversion layer 103 of layer and a positive electrode layer 104.To form solar energy in large area battery module, it is respectively formed with
The the first shallow trench isolation I1 for penetrating photoelectric conversion layer 103 and positive electrode layer 104, the second isolation area for penetrating photoelectric conversion layer 103
Domain I2 and the 3rd shallow trench isolation I3 for penetrating positive electrode layer 101.Fig. 3 is refer to, through the first shallow trench isolation I1, the second isolation
Region I2 and the 3rd shallow trench isolation I3 forms interior current loop S, and is formed and be generally aligned in the same plane respectively through welded contact 105
On negative contacts 106 and positive contact 107 electric energy of changing photoelectric conversion layer 103 to be connected with external circuit take out
Use.
Though above-mentioned solar module 100 can pass through the multiple solar cells of series connection to form big smooth surface
Product, but decline because its fill factor, curve factor (Fill Factor) will become big with entire area, cause solar-electricity extraction efficiency to drop
It is low.Furthermore if when being integrated with general display device, it because of the configuration variance in structure, will reduce effective area, this will be unfavorable for
The existing small-sized developing direction for taking the frivolous size of display device and big effective area.
According to upper, development can provide enough electric power and the frivolous size of tool, and can the sun integrated of height and existing display device
Energy battery module is actually necessary.
The content of the invention
The present invention provides a kind of solar cell hollow out circuit, and it can be integrated in existing display device in a simple manner.Again
Person, there can be larger effective area with solar cell display device made of such a solar cell hollow out circuit, and
Based on the configuration mode of positive and negative electrode contact, more elastic application kenel can be obtained.
For the above-mentioned purpose, in an embodiment, solar cell hollow out circuit include a substrate, one first conductive layer,
One photoelectric conversion layer and one second conductive layer.First conductive layer is formed on substrate.It is conductive that photoelectric conversion layer is formed at first
On layer.Second conductive layer is formed on photoelectric conversion layer.Wherein the first conductive layer, photoelectric conversion layer and the second conductive layer are in substrate
One hollow circle zone of upper formation, and hollow circle zone defines an opening, hollow circle zone phase in center on substrate
Corresponding opening defines a negative contacts or a positive contact.
In above-mentioned solar cell hollow out circuit, the first conductive layer material can include transparent conducting glass (TCO), and second
Conductive layer material can include transparent conducting glass (TCO), metal or its combination.Photoelectric conversion layer material includes monocrystalline silicon, amorphous
Silicon (a-Si), microcrystal silicon (μ c-Si), amorphous silicon germanium (a-SiGe), amorphous silica (a-SiO) or noncrystalline silicon carbide (a-SiC),
Copper indium gallium selenide (CIGS), cadmium telluride (CdTe), DSSC (DSSC) or organic solar batteries.
In above-mentioned solar cell hollow out circuit, one first shallow trench isolation is formed on the first conductive layer, it runs through photoelectricity
Conversion layer and the second conductive layer.One second shallow trench isolation is formed on first conductive layer, it runs through photoelectric conversion layer.Wherein second leads
Electric layer is partially filled with the second shallow trench isolation.Hollow circle zone is formed close to the one first of opening for the isolation of the first shallow trench isolation
Circle zone and one second circle zone away from opening.First circle zone is made as a positive contact, the second circle zone
For a negative contacts.In another example, the first circle zone can act also as a negative contacts, now the second circle zone as one just
Polar contact.
In another embodiment, multiple first shallow trench isolations are formed on the first conductive layer, each first shallow trench isolation runs through photoelectricity
Conversion layer and the second conductive layer.Multiple second shallow trench isolations are formed on first conductive layer, each second shallow trench isolation turns through photoelectricity
Layer is changed, the second Conductive layer portions fill each second shallow trench isolation.One the 3rd shallow trench isolation is formed on substrate, it is conductive through first
Layer.Wherein the 3rd shallow trench isolation is located therein between one second shallow trench isolation and wherein one first shallow trench isolation.Hollow ring is around area
Domain is formed close to one first circle zone of opening, one second circle zone away from opening for the isolation of each first shallow trench isolation
And one the 3rd circle zone between the first circle zone and the second circle zone.Wherein the first circle zone can be used as one just
Polar contact, now the second circle zone is as a negative contacts.In another example, the first circle zone can act also as a negative pole and connect
Point, now the second circle zone is as a positive contact.
In another embodiment, the present invention provides a kind of solar cell display device, includes a substrate, one first conduction
Layer, a photoelectric conversion layer, one second conductive layer and a display panel.First conductive layer is formed on substrate.Photoelectric conversion layer
It is formed on the first conductive layer.Second conductive layer is formed on photoelectric conversion layer.Wherein the first conductive layer, photoelectric conversion layer and
Two conductive layers are in one hollow circle zone of formation on substrate, and hollow circle zone defines an opening in center on substrate.
Display panel covering is open and in the relative display word of aperture position or pattern.
In above-mentioned solar cell display device, display panel can be a contact panel or a non-touch-control panel.Hollow ring
Around 1/8 that region area is aperture area.Hollow circle zone and corresponding opening one negative contacts of definition or a positive contact.
Brief description of the drawings
Fig. 1 is to illustrate a known solar cells cascaded structure schematic diagram;
Fig. 2 is the solar cell cascaded structure sectional view for illustrating Fig. 1;
Circuit diagram when Fig. 3 is the solar cell cascaded structure use for illustrating Fig. 1;
Fig. 4 A are the solar cell hollow out circuit sectional views for illustrating one embodiment of the invention;
Fig. 4 B are the top views for the solar cell hollow out circuit for illustrating Fig. 4 A;
Fig. 5 A are the solar cell hollow out circuit sectional views for illustrating another embodiment of the present invention;
Fig. 5 B are the top views for the solar cell hollow out circuit for illustrating Fig. 5 A;
Fig. 6 A are to illustrate the solar cell hollow out circuit sectional view according to further embodiment of this invention;
Fig. 6 B are the top views for the solar cell hollow out circuit for illustrating Fig. 6 A;
Fig. 7 A are the solar cell hollow out circuit sectional views for illustrating yet another embodiment of the invention;
Fig. 7 B are the top views for the solar cell hollow out circuit for illustrating Fig. 7 A;
Fig. 8 is the embodiment schematic diagram for illustrating the positive and negative polar contact that solar cell hollow out circuit is formed in the present invention;
Fig. 9 is to illustrate the solar cell display device schematic diagram according to one embodiment of the invention;
Figure 10 A are the solar cell display device sectional views for illustrating Fig. 9, and light is by substrate incident;And
Figure 10 B are the sectional views for another embodiment of solar cell display device for illustrating Fig. 9, and light is by display panel
It is incident.
Embodiment
It the following drawings illustrate multiple embodiments of the present invention.As clearly stated, the details in many practices
It will be explained in the following description.It should be appreciated, however, that the details in these practices is not applied to limit the present invention.Also
It is to say, in section Example of the present invention, the details in these practices is non-essential.In addition, for the sake of simplifying accompanying drawing, some
Known usual structure will be illustrated in a manner of simply illustrating in the accompanying drawings with element.
It refer to Fig. 4 A and Fig. 4 B.Fig. 4 A are that the side of solar cell hollow out circuit 200 for illustrating one embodiment of the invention is cutd open
View;Fig. 4 B are the top views for the solar cell hollow out circuit 200 for illustrating Fig. 4 A.Solar cell hollow out circuit 200 includes
One substrate 201, one first conductive layer 202, a photoelectric conversion layer 203 and one second conductive layer 204.The shape of first conductive layer 202
Into on substrate 201.Photoelectric conversion layer 203 is formed on the first conductive layer 202.Second conductive layer 204 is formed at opto-electronic conversion
On layer 203.First conductive layer 202, the conductive layer 204 of photoelectric conversion layer 203 and second are in forming a hollow ring around area on substrate 201
Domain A.Hollow circle zone A defines an opening O in center on substrate 201.Hollow circle zone A can be conductive in forming first
Distinctly formed when layer 202, photoelectric conversion layer 203 or the second conductive layer 204, also or in the photoelectric conversion layer of the first conductive layer 202/
The sandwich construction of 203/ second conductive layer 204 re-forms after being formed.
Above-mentioned photoelectric conversion layer 203 is used to convert light energy into electric energy, its substantially thin-film solar cells knot
Structure, and its material can include monocrystalline silicon, non-crystalline silicon (a-Si), microcrystal silicon (μ c-Si), amorphous silicon germanium (a-SiGe), amorphous oxide
Silicon (a-SiO) or noncrystalline silicon carbide (a-SiC), copper indium gallium selenide (CIGS), cadmium telluride (CdTe), DSSC
Or organic solar batteries etc. (DSSC).First conductive layer 202 and the second conductive layer 204 are used to will transmit through photoelectric conversion layer 203
Caused electric energy takes out and is used after conversion.In general, the material of the first conductive layer 202 can be chosen such as transparent conducting glass (TCO),
And the material of the second conductive layer 204 can be chosen such as transparent conducting glass (TCO), metal or its combination.
To form actually available circuit, one first shallow trench isolation I1, the first shallow trench isolation are formed on the first conductive layer 202
I1 runs through the conductive layer 204 of photoelectric conversion layer 203 and second.Separately in forming one second shallow trench isolation I2 on the first conductive layer 202, the
Two shallow trench isolation I2 run through photoelectric conversion layer 203, and the second conductive layer 204 is then partially filled with the second shallow trench isolation I2.Now, in
Empty circle zone A is formed close to opening O one first circle zone A1 and away from opening O's for the first shallow trench isolation I1 isolations
One second circle zone A2.In Fig. 4 A and Fig. 4 B, the first circle zone A1 is and the second circle zone as a positive contact
A2 is as a negative contacts.In Fig. 4 A, under general status, the material of the first conductive layer 201 can be chosen for transparent conducting glass
And positive contact material is used as, and the material of the second conductive layer 204 can be chosen for transparent conducting glass (TCO), metal or its combination
As negative contacts material.Because of the first shallow trench isolation I1 and the second shallow trench isolation I2 formation, the first circle zone A1 and the is made
Two conductive layers 204 turn on, and the second circle zone A2 turns on the first conductive layer 202.When light L exposes to light by substrate 201
During electric conversion layer 203, electric energy, and current loop S in generation are converted light energy into.Now, can pass through by the first circle zone A1
The positive contact that the negative contacts and the second circle zone A2 formed are formed will transmit through after photoelectric conversion layer 203 is changed and produce
Electric energy take out.The present invention also can pass through the configuration in structure and change the position of positive contact and negative contacts.For example,
In further embodiment, the first circle zone A1 is can be used as a positive contact, and now the second circle zone A2 is relative makees
For a negative contacts.The adjustable embodiment of this positive contact and negative contacts position will illustrate it in subsequent paragraph.
It refer to Fig. 5 A and Fig. 5 B.Fig. 5 A are the solar cell hollow out circuits 200 for illustrating another embodiment of the present invention
Sectional view;Fig. 5 B are the top views for the solar cell hollow out circuit 200 for illustrating Fig. 5 A.Solar-electricity in Fig. 5 A and Fig. 5 B
Pond hollow out circuit 200 has the structure similar with the solar cell hollow out circuit 200 in Fig. 4 A and Fig. 4 B, and difference is first
Shallow trench isolation I1 and the second shallow trench isolation I2 forming position.By in Fig. 5 A, completely cutting off area based on the first shallow trench isolation I1 and second
The difference of domain I2 forming position, the first circle zone A1 is made to be turned on the first conductive layer 202, and the second circle zone A2 and
Two conductive layers 204 turn on, it can be seen that interior current loop S flow direction is just opposite with Fig. 4 A.Now, close to opening O the first ring
Around region, A1 is that the second circle zone A2 as a positive contact, and away from opening O is to be used as a negative contacts relatively.By scheming
5B also can be seen that the relative position change of this positive contact and negative contacts.
For more applications can be obtained.Foregoing solar energy hollow out circuit can also be formed on hollow circle zone A
The combination of series circuit.
It please continue reference picture 6A and Fig. 6 B.Fig. 6 A are to illustrate the solar cell hollow out circuit according to further embodiment of this invention
200 sectional views;Fig. 6 B are the top views for the solar cell hollow out circuit 200 for illustrating Fig. 6 A.Solar-electricity in Fig. 6 A
Pond hollow out circuit 200, its structure are similar to depicted in earlier figures 4A, formed with hollow circle zone A on substrate 201.It is main
Difference is wanted, in Fig. 6 A, solar cell hollow out circuit 200 includes multiple first shallow trench isolation I1 and the second shallow trench isolation
I2, and form one the 3rd shallow trench isolation I3.Similar to previous embodiment, it is conductive that multiple first shallow trench isolation I1 are formed at first
On layer 202, and each first shallow trench isolation I1 runs through the conductive layer 204 of photoelectric conversion layer 203 and second.Multiple second shallow trench isolation I2
The first conductive layer 202 is formed at, each second shallow trench isolation I2 runs through photoelectric conversion layer 203, and the second conductive layer 204 is partially filled with respectively
Second shallow trench isolation I2.In addition, led on substrate 201 formed with one the 3rd shallow trench isolation I3, the 3rd shallow trench isolation I3 through first
Electric layer 202.3rd shallow trench isolation I3, it is located therein between one second shallow trench isolation I2 and wherein one first shallow trench isolation I1.In
In Fig. 6 A, hollow circle zone A is formed close to opening O one first circle zone for two the first shallow trench isolation I1 isolations
A1, the one second circle zone A2 away from opening O and one the 3rd between the first circle zone A1 and the second circle zone A2
Circle zone A3.Now, when light L exposes to photoelectric conversion layer 203, caused interior current loop S is as depicted in Fig. 6 A.
In Fig. 6 A, solar cell hollow out circuit 200 can be considered to be repeated to connect and compose by construction unit U.In each construction unit U, bag
Containing one first shallow trench isolation I1, one second shallow trench isolation I2 and one the 3rd shallow trench isolation I3.By such a construction unit U-shaped into
Repetition connection, and pass through the 3rd shallow trench isolation I3, make previous construction unit U just (negative) electrode and latter arrangement unit U
Bear (just) electrode conduction and form interior current loop S series circuit.
It refer to Fig. 7 A and Fig. 7 B.Fig. 7 A are the sides of solar cell hollow out circuit 200 for illustrating another embodiment of the present invention
Sectional view;Fig. 7 B are the top views for the solar cell hollow out circuit 200 for illustrating Fig. 7 A.Solar cell in Fig. 7 A and Fig. 7 B
Hollow out circuit 200 has the structure similar with the solar cell hollow out circuit 200 in Fig. 6 A and Fig. 6 B, and difference is two
One shallow trench isolation I1 and two the second shallow trench isolation I2 forming position, the 3rd shallow trench isolation I3 are still then in wherein one first
Between shallow trench isolation I1 and wherein one second shallow trench isolation I2.By in Fig. 7 A, completely cutting off area based on the first shallow trench isolation I1 and second
The difference of domain I2 forming position, the interior current loop S formed flow direction are just opposite with Fig. 6 A.Now, close to opening O's
First circle zone A1 is that the second circle zone A2 as a positive contact, and away from opening O is to be connect relatively as a negative pole
Point.The relative position that also can be seen that this positive contact and negative contacts by Fig. 7 B changes.
It please continue reference picture 8.Fig. 8 is to illustrate the positive and negative polar contact that solar cell hollow out circuit 200 is formed in the present invention
One embodiment schematic diagram.In foregoing it is stated that in Fig. 4 A, through the first shallow trench isolation I1 and the second shallow trench isolation I2 formation, and
Hollow first circle zone A1 can be made, and as negative contacts, hollow second circle zone A2 is as positive contact.To simplify processing procedure,
Depicted in another possible embodiment Fig. 8.The process sequence of script, it is to be initially formed photoelectric conversion layer 203, then sequentially forms second
Shallow trench isolation I2, the second conductive layer 204, the first shallow trench isolation I1.Due to the first shallow trench isolation I1 and the second shallow trench isolation I2 mono-
As all be cut by laser formed, and formed all pass through film-plating process as the conductive layer 204 of photoelectric conversion layer 203 and second.For
Avoid being cut by laser processing procedure and film-plating process staggeredly performs the not convenient property brought, then swashed again after can first completing film-plating process
Light cuts processing procedure.For example, the conductive layer 204 of photoelectric conversion layer 203 and second is first sequentially formed with film-plating process, then swashed
Light cutting processing procedure is initially formed the first shallow trench isolation I1, then forms the second shallow trench isolation I2 ', or be initially formed the second shallow trench isolation
I2 ', re-form the first shallow trench isolation I1.Now, because the first shallow trench isolation I1 and the second shallow trench isolation I2 ' are all to cut through photoelectricity to turn
The conductive layer 204 of layer 203 and second is changed, therefore the second shallow trench isolation I2 ' is not like the second shallow trench isolation I2 tools in previous embodiment
Have to form the effect of export positive contact, therefore conductive materials 205 are inserted in the second shallow trench isolation I2 ' using wire mark or other modes
To form positive contact.
It please continue reference picture 9, Figure 10 A and Figure 10 B.Fig. 9 is to illustrate to show according to the solar cell of one embodiment of the invention
The schematic diagram of device 300.Figure 10 A are the sectional views of solar cell display device 300 for illustrating Fig. 9, and light L is entered by substrate 201
Penetrate.Figure 10 B are the sectional views for the 300 another embodiment of solar cell display device for illustrating Fig. 9, and light L is by display panel
301 is incident.One application examples of foregoing solar cell hollow out circuit 200, it is to be formed with reference to a display panel 301 such as Fig. 9 institutes
The solar cell display device 300 illustrated.It is by taking handheld electronic book as an example in Fig. 9, display panel 301 is covered into substrate
The opening O of center is in order to opposed open O position displays word or pattern on 201.Now, under e-book frame portion
Side, that is, correspond to the hollow circle zone A of solar cell hollow out circuit 200.Through solar cell hollow out circuit 200, you can
Electric energy is stored in the lump when the reading electronic book of one side, to provide electric power needed for display panel 301.The solar cell of the present invention
In hollow out circuit 200, due to the particular arrangement mode of structure, make path of the carrier in the first conductive layer 202 shorter, thus make
Fill factor, curve factor (Fill Factor) is improved and improves electric extraction efficiency.Whereby, hollow circle zone A areas are only the O that is open
The 1/8 of area can provide enough electric power, and the present invention can significantly concede configuration space to display panel 301, and then greatly improve
The viewing area of e-book.Furthermore due to the particular arrangement mode of the first conductive layer 202 and the second conductive layer 204, make the present invention
Solar cell display device 300 have concurrently using upper diversity, such as be easy to integrate with external device (ED) and be unlikely to increase
Volume is significantly increased in complicated processing procedure.
In the present invention, the first conductive layer 202 and 204 visual actual state of the second conductive layer and change the configuration of its both positive and negative polarity.
In Figure 10 A, the selection of the first conductive layer 202 is positive electrode material, and the selection of the second conductive layer 204 is negative electrode material, therefore is leaned on
Nearly opening O the first circle zone A1 is that the second circle zone A2 as a negative contacts, and away from opening O is relative conduct
One positive contact.Now, light L can expose to photoelectric conversion layer 203 by substrate 201, convert light energy into electric energy, and in generation
Current loop S.
In another possible embodiment, as depicted in Figure 10 B.The selection of first conductive layer 202 is negative electrode material, and the
The selection of two conductive layers 204 be positive electrode material, thus close opening O the first circle zone A1 be as a positive contact, it is and remote
The the second circle zone A2 for leaving mouthful O is to be used as a negative contacts relatively.Now, light L can expose to light by display panel 301
Electric conversion layer 203, convert light energy into electric energy, and current loop S in generation.
Aforementioned positive electrode contact, negative contacts and light L incident directions can freely arrange in pairs or groups to obtain more broad application
Scope.
To sum up, solar cell hollow out circuit 200 provided by the invention can integrate in a simple manner with display panel 301 and
Form solar cell display device 300.Such a solar cell display device 300 can have larger effective area, and
Based on the configuration mode of special positive and negative electrode contact, can have and apply upper elasticity.
Although the present invention is disclosed above with embodiment, so it is not limited to the present invention, therefore the guarantor of the present invention
Shield scope is worked as to be defined depending on the scope of which is defined in the appended claims.
Claims (15)
1. a kind of solar cell hollow out circuit, it is characterised in that include:
One substrate;
One first conductive layer, is formed on the substrate;
One photoelectric conversion layer, it is formed on first conductive layer;And
One second conductive layer, is formed on the photoelectric conversion layer;
Wherein first conductive layer, the photoelectric conversion layer and second conductive layer on the substrate formed a hollow circle zone,
And the hollow circle zone defines an opening in center on the substrate, the corresponding opening of the hollow circle zone defines one
Negative contacts or a positive contact.
2. solar cell hollow out circuit according to claim 1, it is characterised in that the first conductive layer material includes saturating
Bright electro-conductive glass, the second conductive layer material include transparent conducting glass, metal or its combination.
3. solar cell hollow out circuit according to claim 1, it is characterised in that the photoelectric conversion layer material includes crystalline substance
Silicon, non-crystalline silicon, microcrystal silicon, amorphous silicon germanium, amorphous silica, noncrystalline silicon carbide, copper indium gallium selenide, cadmium telluride, dye sensitization are too
Positive energy battery or organic solar batteries.
4. solar cell hollow out circuit according to claim 1, it is characterised in that one the is formed on first conductive layer
One shallow trench isolation, first shallow trench isolation run through the photoelectric conversion layer and second conductive layer, one are formed on first conductive layer
Second shallow trench isolation, second shallow trench isolation run through the photoelectric conversion layer, and second Conductive layer portions fill the second isolation area
Domain.
5. solar cell hollow out circuit according to claim 4, it is characterised in that the hollow circle zone for this first
Shallow trench isolation completely cuts off and is formed close to one first circle zone of the opening and one second circle zone away from the opening.
6. solar cell hollow out circuit according to claim 5, it is characterised in that first circle zone as this just
Polar contact, second circle zone is as the negative contacts.
7. solar cell hollow out circuit according to claim 5, it is characterised in that first circle zone is negative as this
Polar contact, second circle zone is as the positive contact.
8. solar cell hollow out circuit according to claim 1, it is characterised in that formed on first conductive layer multiple
First shallow trench isolation, respectively first shallow trench isolation run through the photoelectric conversion layer and second conductive layer;Shape on first conductive layer
Into multiple second shallow trench isolations, respectively second shallow trench isolation runs through the photoelectric conversion layer, and second Conductive layer portions filling respectively should
Second shallow trench isolation;One the 3rd shallow trench isolation is formed on the substrate, the 3rd shallow trench isolation runs through first conductive layer, wherein should
3rd shallow trench isolation is located therein between second shallow trench isolation and wherein 1 first shallow trench isolation.
9. solar cell hollow out circuit according to claim 8, it is characterised in that the hollow circle zone for respectively this
One shallow trench isolation completely cuts off and is formed close to one first circle zone, one second circle zone away from the opening and position of the opening
One the 3rd circle zone between first circle zone and second circle zone.
10. solar cell hollow out circuit according to claim 9, it is characterised in that first circle zone is used as should
Positive contact, second circle zone is as the negative contacts.
11. solar cell hollow out circuit according to claim 9, it is characterised in that first circle zone is used as should
Negative contacts, second circle zone is as the positive contact.
12. a kind of solar cell display device, it is characterised in that include:
One substrate;
One first conductive layer, it is formed on the substrate;
One photoelectric conversion layer, it is formed on first conductive layer;
One second conductive layer, it is formed on the photoelectric conversion layer, wherein first conductive layer, the photoelectric conversion layer and this second
Conductive layer is in one hollow circle zone of formation on the substrate, and the hollow circle zone defines one in center on the substrate and opened
Mouthful;And
One display panel, the display panel cover the opening and in the relative display word of the aperture position or patterns.
13. solar cell display device according to claim 12, it is characterised in that the display panel is a touch surface
Plate or a non-touch-control panel.
14. solar cell display device according to claim 12, it is characterised in that the hollow ring is around region area
The 1/8 of the aperture area.
15. solar cell display device according to claim 12, it is characterised in that the hollow circle zone is corresponding
The opening defines a negative contacts or a positive contact.
Priority Applications (1)
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CN201610829685.XA CN107845688A (en) | 2016-09-19 | 2016-09-19 | Solar cell hollow out circuit and solar cell display device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201610829685.XA CN107845688A (en) | 2016-09-19 | 2016-09-19 | Solar cell hollow out circuit and solar cell display device |
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Publication Number | Publication Date |
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CN107845688A true CN107845688A (en) | 2018-03-27 |
Family
ID=61656887
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CN201610829685.XA Withdrawn CN107845688A (en) | 2016-09-19 | 2016-09-19 | Solar cell hollow out circuit and solar cell display device |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN111863978A (en) * | 2019-04-29 | 2020-10-30 | 北京铂阳顶荣光伏科技有限公司 | Solar cell and preparation method thereof |
WO2020237694A1 (en) * | 2019-05-28 | 2020-12-03 | 信利半导体有限公司 | Manufacturing method for thin film solar cell and thin film solar cell |
JP2021529428A (en) * | 2019-05-28 | 2021-10-28 | 信利半導体有限公司Truly Semiconductors Ltd. | Manufacturing method of thin-film solar cells and thin-film solar cells |
FR3130451A1 (en) * | 2021-12-15 | 2023-06-16 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | photovoltaic cell element, photovoltaic cell and methods of manufacturing such element and cell |
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CN101813849A (en) * | 2009-02-19 | 2010-08-25 | 北京京东方光电科技有限公司 | Colored film substrate, manufacturing method thereof and liquid crystal display panel |
CN104834117A (en) * | 2015-06-01 | 2015-08-12 | 京东方科技集团股份有限公司 | Colored film substrate, display device and manufacturing method of colored film substrate |
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CN101813849A (en) * | 2009-02-19 | 2010-08-25 | 北京京东方光电科技有限公司 | Colored film substrate, manufacturing method thereof and liquid crystal display panel |
CN104834117A (en) * | 2015-06-01 | 2015-08-12 | 京东方科技集团股份有限公司 | Colored film substrate, display device and manufacturing method of colored film substrate |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
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CN111863978A (en) * | 2019-04-29 | 2020-10-30 | 北京铂阳顶荣光伏科技有限公司 | Solar cell and preparation method thereof |
WO2020237694A1 (en) * | 2019-05-28 | 2020-12-03 | 信利半导体有限公司 | Manufacturing method for thin film solar cell and thin film solar cell |
JP2021529428A (en) * | 2019-05-28 | 2021-10-28 | 信利半導体有限公司Truly Semiconductors Ltd. | Manufacturing method of thin-film solar cells and thin-film solar cells |
JP7064591B2 (en) | 2019-05-28 | 2022-05-10 | 信利半導体有限公司 | Manufacturing method of thin-film solar cells and thin-film solar cells |
FR3130451A1 (en) * | 2021-12-15 | 2023-06-16 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | photovoltaic cell element, photovoltaic cell and methods of manufacturing such element and cell |
WO2023110540A1 (en) * | 2021-12-15 | 2023-06-22 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Photovoltaic cell element, photovoltaic cell and methods for manufacturing such an element and cell |
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