CN107845651A - Imaging sensor and forming method thereof - Google Patents
Imaging sensor and forming method thereof Download PDFInfo
- Publication number
- CN107845651A CN107845651A CN201711065060.1A CN201711065060A CN107845651A CN 107845651 A CN107845651 A CN 107845651A CN 201711065060 A CN201711065060 A CN 201711065060A CN 107845651 A CN107845651 A CN 107845651A
- Authority
- CN
- China
- Prior art keywords
- medium
- face
- reflective
- substrate
- reflector layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000003384 imaging method Methods 0.000 title claims abstract description 53
- 238000000034 method Methods 0.000 title claims abstract description 31
- 239000000758 substrate Substances 0.000 claims abstract description 81
- 229910052751 metal Inorganic materials 0.000 claims description 74
- 239000002184 metal Substances 0.000 claims description 74
- 239000000463 material Substances 0.000 claims description 32
- 239000004411 aluminium Substances 0.000 claims description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 15
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 15
- 229910052721 tungsten Inorganic materials 0.000 claims description 15
- 239000010937 tungsten Substances 0.000 claims description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 13
- 229910052802 copper Inorganic materials 0.000 claims description 13
- 239000010949 copper Substances 0.000 claims description 13
- 230000008569 process Effects 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 abstract description 23
- 238000006243 chemical reaction Methods 0.000 abstract description 18
- 239000010410 layer Substances 0.000 description 124
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 238000011282 treatment Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 238000002161 passivation Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 230000005611 electricity Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 230000001976 improved effect Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000003701 mechanical milling Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
The present invention provides a kind of imaging sensor and forming method thereof, wherein, imaging sensor includes：Substrate, the substrate include relative the first face and the second face, and the substrate includes multiple discrete photosensitive areas and surrounds the isolated area of each photosensitive area, and each photosensitive area includes center respectively and surrounds the external zones of the center；Dielectric structure positioned at the face of substrate first, there is reflective structure in the dielectric structure, the reflective structure does not contact with the substrate, and the reflective structure includes：Reflector layer in the center dielectric structure, the spacing between the reflector layer and the first face are the first spacing；Reflective frame in the dielectric structure, the reflective frame are located at the isolated area, external zones or extend to the external zones from the isolated area, and the spacing between the reflective frame and the first face is the second spacing, and described second is smaller than the first spacing.Described image sensor can improve quantum conversion, and reduce optical crosstalk.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, more particularly to a kind of imaging sensor and forming method thereof.
Background technology
With the continuous improvement of semiconductor technology, imaging sensor (Image Sensor) as current acquisition of information one
Kind elemental device obtains more and more extensive application in modern society.
Imaging sensor can be divided into according to element difference by CCD (Charge Coupled Device, Charged Couple member
Part) imaging sensor and CMOS (Complementary Metal-Oxide Semiconductor, metal-oxide semiconductor (MOS)
Element) two major class of imaging sensor.With the development of semiconductor technology, the performance of CMOS transistor gradually steps up, resolution ratio by
Gradually catch up with and surpass ccd image sensor.And cmos image sensor has the characteristics that integrated level height, small power consumption, speed is fast, cost is low.
Cmos image sensor is a kind of typical solid state image sensor.Cmos image sensor is generally by image-sensitive unit
Several portions such as array, line driver, row driver, time sequence control logic, a/d converter, data/address bus output interface, control interface
It is grouped into.
Cmos image sensor can be divided into according to structure：Positive illuminated cmos image sensor, back-illuminated type cmos image pass
Sensor and stack cmos image sensor.In positive illuminated cmos image sensor, photodiode is located at circuit transistor
Rear, light-inletting quantity can be affected because blocking.Back-illuminated cmos image sensors are exactly by photodiode and circuit transistor
Location swap.Stack cmos image sensor is developed by back-illuminated cmos image sensors.Stack cmos image
Originally the circuit part that photosensory assembly need to be abutted is placed in the lower section of photosensory assembly by sensor so that device interior possesses more
Space.While functional diversities are realized, miniaturization is also accomplished.Back-illuminated cmos image sensors and stack CMOS figures
As sensor allows light to initially enter photodiode so as to increase sensitive volume, the bat under low-light conditions can be significantly improved
Effect is taken the photograph, so as to be widely used in camera, electronic toy, video conference and the camera settings of security system.
However, there is the shortcomings that quantum conversion is low, and optical crosstalk is more serious in existing cmos image sensor.
The content of the invention
The present invention solves the problems, such as to be to provide a kind of imaging sensor and forming method thereof, it is possible to increase imaging sensor
Quantum conversion, reduce optical crosstalk.
To solve the above problems, technical solution of the present invention provides a kind of map sensor, including：Substrate, the substrate include
Relative the first face and the second face, the substrate include multiple discrete photosensitive areas and surround the isolated area of each photosensitive area, respectively
There is photo-sensitive cell respectively, each photosensitive area includes center respectively and surrounds the external zones of the center in photosensitive area substrate；
Dielectric structure positioned at first face of substrate surface, there is reflective structure in the dielectric structure, the reflective structure includes：
Reflector layer in the center dielectric structure, the spacing between the reflector layer and the first face are the first spacing；It is located at
Reflective frame in the dielectric structure, the reflective frame are located at the isolated area, external zones or extend to institute from the isolated area
External zones is stated, the spacing between the reflective frame and the first face is the second spacing, and described second is smaller than the first spacing.
Optionally, the photosensitive area is completely covered in the reflector layer.
Optionally, the reflective frame is located at the isolated area, the reflective frame edge and the reflector layer EDGE CONTACT.
Optionally, the projecting figure of the reflective frame on the first face is annular；The perspective view of reflective frame on the first face
Shape surrounds one or more photosensitive areas.
Optionally, adjacent reflector layer edge contacts with each other；The edge of adjacent reflective frame contacts with each other.
Optionally, the reflector layer is being 1300 angstroms~2700 angstroms along the size on the direction in first face；
The reflective frame is being 700 angstroms~1900 angstroms along the size on the direction in first face；The reflective frame along hang down
Directly in the size on the direction of reflective frame side wall be 300 angstroms~1500 angstroms.
Optionally, the material of the reflector layer is copper, aluminium or tungsten；The material of the reflective frame is copper, aluminium or tungsten.
Accordingly, technical solution of the present invention also provides a kind of forming method of imaging sensor, including：Substrate, institute are provided
Stating substrate includes relative the first face and the second face, and the substrate includes multiple discrete photosensitive areas and surrounds each photosensitive area
Isolated area, there is photo-sensitive cell respectively in each photosensitive area substrate；Dielectric structure is formed in the face of substrate first and positioned at institute
The reflective structure in dielectric structure is stated, the reflective structure includes：Reflector layer in the center dielectric structure, it is described
Spacing between reflector layer and the first face is the first spacing；Reflective frame in the dielectric structure, the reflective frame are located at
The isolated area, external zones extend to the external zones, the spacing between the reflective frame and the first face from the isolated area
The first spacing is smaller than for the second spacing, described second.
Optionally, the substrate also includes bonding pad；The dielectric structure includes：First positioned at the face of substrate first
Dielectric structure；Positioned at the second medium structure of the first medium body structure surface；The forming method also includes：In the connection
The first connector is formed in area's first medium floor；The first interconnection metal is formed in first plug surface；In the bonding pad
The second connector is formed in second medium layer, the second interconnection metal, the second interconnection metal position are formed in second plug surface
In second plug surface, second connector electrically connects with the described first interconnection metal；The reflective frame and described reflective
Layer is located in the second medium structure；Form the dielectric structure, the first connector, the first interconnection metal, the second connector and the
The step of two interconnection metals, includes：In substrate surface formation first medium structure, the bonding pad first medium structure
Metal is interconnected with the first connector and positioned at the first of first plug surface；Formed in the first medium body structure surface
Second medium structure, there is the first hole in the photosensitive area second medium structure, have in the isolated area second medium structure
Second hole, there is the 3rd hole and positioned at the 4th hole in the 3rd bottom hole portion in the bonding pad second medium structure, it is described
The second medium structure is run through in 3rd hole with the 4th hole；In first hole, the second hole, the 3rd hole and the 4th hole, and
The second medium body structure surface forms metal level；Planarization process is carried out to the metal level, removes the second medium knot
The metal level on structure surface, reflector layer is formed in first hole, reflective frame is formed in second hole, in the 3rd hole
It is middle to form the second interconnection metal, form the second connector in the 4th hole；Or the reflector layer is located at the isolated area
Second medium body structure surface；Form the dielectric structure, the first connector, the first interconnection metal, the second connector and the second interconnection metal
The step of include：Form first medium structure in the substrate surface, have in the first medium structure the first connector and
First positioned at first plug surface interconnects metal；Second medium structure is formed in the first medium body structure surface；
The second connector is formed in the bonding pad second medium structure；Reflective frame is formed in the isolated area second medium structure；
Second plug surface forms the second interconnection metal；Formed in the photosensitive area second medium body structure surface reflective.
Optionally, the number of the second medium structure is multiple that multiple second medium structures are stacked；It is described reflective
Frame is located in any one or more second medium structures, and the reflector layer is located at any one or more second medium structures
In.
Compared with prior art, technical scheme has advantages below：
In the imaging sensor that technical solution of the present invention provides, there is reflective structure in the dielectric structure.Described image
In the course of the work, the light that the reflective structure is reached through the photo-sensitive cell can be reflected back sensor by reflective structure
In photo-sensitive cell, make the photo-sensitive cell that some light is converted into electric signal, so as to increase the amount of imaging sensor
Sub- transformation efficiency.The reflective structure is included positioned at the reflector layer of the photosensitive area and reflective in the dielectric structure
Frame, the light that the reflective frame can make to be irradiated to the reflective frame surface is reflected back in the photo-sensitive cell, so as to enter
One step increases the quantum conversion of imaging sensor.In addition, the reflective frame can prevent that the light from a certain photosensitive area is saturating
Cross isolated area dielectric structure and enter neighboring photosensitive area, and absorbed by the photo-sensitive cell in neighboring photosensitive area, therefore the reflective frame energy
Enough reduce the optical crosstalk of imaging sensor, improve the performance of imaging sensor.
Further, the photosensitive area substrate is completely covered in the reflector layer, by increasing capacitance it is possible to increase reflector layer is to through described photosensitive
The reflection of the light of diode, so as to increase the conversion quantum efficiency of described image sensor.
Further, the reflective frame is located at the isolated area, and the reflector layer edge connects with the reflective frame sidewall edge
Touch, the light that the reflective frame can make to be transmitted to the isolated area medium knot is reflected back in the photo-sensitive cell, so as to increase
The quantum efficiency of described image sensor.
In the forming method for the imaging sensor that technical solution of the present invention provides, there is reflective knot in the dielectric structure
Structure.Described image sensor in the course of the work, the light of the reflective structure is reached through the photo-sensitive cell, can be anti-
Photo structure is reflected back in photo-sensitive cell, makes the photo-sensitive cell that some light is converted into electric signal, so as to increase figure
As the quantum conversion of sensor.The reflective structure is included positioned at the reflector layer of the photosensitive area and positioned at the medium
Reflective frame in structure, the light that the reflective frame can make to be irradiated to the reflective frame surface are reflected back the photo-sensitive cell
In, so as to further increase the quantum conversion of imaging sensor.In addition, the reflective frame can be prevented from a certain sense
The light in light area enters neighboring photosensitive area through isolated area dielectric structure, and is absorbed by the photo-sensitive cell in neighboring photosensitive area, so as to
The reflective frame can reduce the optical crosstalk of image sensor, improve the performance of imaging sensor.
Further, the reflective frame and the reflector layer are located in the second medium structure, second connector and
Two interconnection metals are located in the second medium structure.The reflective frame and reflector layer can be mutual with second connector and second
Connection metal is formed in identical technique, so as to simplification of flowsheet, reduces process costs.
Brief description of the drawings
Fig. 1 is a kind of structural representation of cmos image sensor；
Fig. 2 is the structural representation of another cmos image sensor；
The structural representation of each step of the embodiment of forming method one of the imaging sensor of Fig. 3 to Fig. 8 present invention；
Fig. 9 is the structural representation of another embodiment of forming method of the imaging sensor of the present invention；
Figure 10 and Figure 11 is the structural representation of another embodiment of imaging sensor of the present invention；
Figure 12 is the structural representation of the another embodiment of the imaging sensor of the present invention.
Embodiment
Problems be present in imaging sensor, such as：Quantum conversion is relatively low, and optical crosstalk is more serious.
In conjunction with a kind of cmos image sensor, it is low to analyze the cmos image sensor quantum conversion, optics string
Disturb the reason for serious：
Fig. 1 is a kind of structural representation of cmos image sensor.
Fig. 1 is refer to, the cmos image sensor includes：Substrate 100, the substrate 100 include the first relative face
With the second face, the substrate includes multiple discrete photosensitive area M, has photodiode 110 in the photosensitive area M substrates 100,
The face surface of substrate 100 first has grid structure 121；Positioned at the face of substrate 100 first and the surface of grid structure 121
Dielectric layer 120, there is electric connection structure 150, the electric connection structure 150 and grid structure electricity in the dielectric layer 120
Connection；Multiple discrete optical filters 130 positioned at the face of substrate 100 second；Lenticule positioned at each surface of optical filter 130
140。
In the course of the work, light is irradiated to the cmos image sensor through the lenticule 140 and optical filter 130
On the photodiode 110, electronics and hole are inspired, the electronics in the depletion layer in the photosensitive diode 110
Separated with hole in the presence of built in field, make Accumulating charge in the photodiode.Cmos image sensor substrate 100
Carrier collector is inside additionally provided with, the carrier collector collects electronics or hole caused by photosensitive diode, forms electricity
Press signal, and make acquisition electronics or hole the quantity of electric charge it is corresponding with voltage signal, so as to convert optical signals to electric signal.
The material of dielectric layer 120 in cmos image sensor is silica, and silica has good insulating properties.So
Higher to the transmissivity of light and silica is transparent material, reflectivity is relatively low.In the cmos image sensor course of work,
Light reaches the photodiode through the lenticule 140 and filter plate 130.Photodiode absorbs some light, will
Optical signal is converted to electric signal.Because the reflectivity of the dielectric layer 120 is relatively low, the light not absorbed by photodiode is easy
Through the dielectric layer 120, so as to cause the quantum conversion of cmos image sensor relatively low, picture quality is poor.
Fig. 2 is the structural representation of another cmos image sensor.
Fig. 2 is refer to, the difference of the cmos image sensor and cmos image sensor shown in Fig. 1 is：Institute
Stating has multiple discrete reflector layers 160 in dielectric layer 120, each reflector layer 160 covers the photosensitive area M.
Wherein, the reflector layer 160 can make the light quilt being irradiated to through the photosensitive area M of substrate 100 on the reflector layer 160
Reflected light electric diode 110, so that photodiode 110 will reflect back into the optical signal come and be converted to electric signal, Jin Erti
The quantum conversion of high cmos image sensor.
However, because the reflector layer 160 is plate-like structure, light of the partial illumination to the surface of reflector layer 160
Projected after being reflected from the side of dielectric layer 120, so as to cause the quantum conversion of the cmos image sensor still compared with
It is low.In addition, another surface of photosensitive area M reflector layers 160 is accessible to through the light of a certain photosensitive area M dielectric layers 120, through photosensitive
The reflection of layer 160 can be absorbed by photosensitive area M photodiodes.Therefore, the reflector layer 160 between adjacent reflector layer 160 reflects
Optical crosstalk easily occurs for light 1, so as to influence image quality.
To solve the technical problem, the invention provides a kind of imaging sensor, including：Jie positioned at the face of substrate first
Matter structure, there is reflective structure in the dielectric structure, the reflective structure does not contact with the substrate, the reflective structure bag
Include：Reflector layer in the center dielectric structure, the spacing between the reflector layer and the first face are the first spacing；Position
Reflective frame in the dielectric structure, the reflective frame are located at the isolated area, external zones or extended to from the isolated area
The external zones, the spacing between the reflective frame and the first face is the second spacing, and described second is smaller than the first spacing.Institute
Quantum conversion can be improved by stating imaging sensor, and reduce optical crosstalk.
It is understandable to enable the above objects, features and advantages of the present invention to become apparent, below in conjunction with the accompanying drawings to the present invention
Specific embodiment be described in detail.
Another structure sheaf of certain structure layer surface " be located at " in the embodiment of the present invention, " certain structure sheaf is located at another structure
" surface " in layer surface " and " forming another structure sheaf in certain structure layer surface " only represents the position between two structure sheafs
Relation, there can be other structures layer between double-layer structure layer.
Fig. 3 to Fig. 8 is the structural representation of each step of the embodiment of forming method one of imaging sensor of the present invention.
It refer to Fig. 3, there is provided substrate 200, the substrate 200 include relative the first face and the second face, the substrate 200
Including multiple discrete photosensitive area A and each photosensitive area A isolated area B is surrounded, there is photosensitive member in each photosensitive area A substrates 200
Part 210.
The photosensitive area A of the substrate 200 is used to form the photo-sensitive cell 210, and the isolated area B of the substrate 200 is used for
Isolate adjacent photosensitive area A.
In the present embodiment, the substrate 200 is silicon substrate.In other embodiments, the material of the substrate be germanium substrate,
The Semiconductor substrates such as silicon-Germanium substrate, silicon-on-insulator or germanium on insulator.
In the present embodiment, the photo-sensitive cell 210 includes photodiode.
In the present embodiment, there is carrier collector in the photosensitive area A of substrate 200, the carrier collector is used for
Obtain electronics caused by the photo-sensitive cell 210.In other embodiments, there is carrier collection in the substrate photosensitive area
Device, carrier collector are used to obtain hole caused by the photo-sensitive cell.
The photo-sensitive cell 210 can produce electronics and hole under the irradiation of light.Caused by the photo-sensitive cell 210
The amount in electronics and hole is relevant with the intensity of light.The carrier collector is used to obtain caused by the photo-sensitive cell 210
Electronics, voltage signal being produced, the power of the voltage signal is relevant with the amount of the electronics of acquisition, so as to relevant with light intensity,
And then optical signal is set to be converted into electric signal.
The substrate 200 also includes bonding pad C, and the bonding pad C is used to form MOS transistor.
In the present embodiment, the bonding pad C is between adjacent isolated area B.In other embodiments, the bonding pad
It may be located on the isolated area and photosensitive area side.
The MOS transistor includes the grid structure 201 positioned at the surface of bonding pad C substrates 200；Positioned at the grid
Source and drain doping area in the both sides substrate 200 of structure 201.
Dielectric structure is subsequently formed in the face of substrate 200 first, there is reflective structure in the dielectric structure, it is described anti-
Photo structure includes the reflector layer being located in the photosensitive area medium A structure, and spacing between the reflector layer and the first face is the
One spacing is located at the reflective frame in the dielectric structure, and the spacing between the reflective frame and the first face is the second spacing, institute
State second and be smaller than the first spacing, the reflective frame and the isolated area medium B form touch.
The dielectric structure includes：First medium structure positioned at the face of substrate 200 first；Positioned at the first medium
The second medium structure of body structure surface；
Described image sensor also includes：The first connector in the isolated area B first medium layers and positioned at institute
State the first interconnection metal of the first plug surface；The second connector and the second interconnection metal in the second dielectric layer, institute
State the second interconnection metal and be located at second plug surface, second connector electrically connects with the described first interconnection metal.
The first interconnection metal does not contact with the reflective frame, and the second interconnection metal does not connect with the reflective frame
Touch.
In the present embodiment, the reflective frame and the reflector layer are located in the second medium structure.
In the present embodiment, formed the dielectric structure, reflective structure, the first connector, first interconnection metal, the second connector and
The step of second interconnection metal, is as shown in Figures 4 to 7.
Fig. 4 is refer to, first medium structure 220, the bonding pad C first medium knots are formed on the surface of substrate 200
There is the first connector 231 in structure 220 and interconnect metal 232 positioned at the first of the surface of the first connector 231.
First connector 231 and first interconnect that metal 232 is used to realizing the grid structure 201 and be subsequently formed the
The electrical connection of two connectors；The first medium structure 220 be used to realize between the reflective structure and substrate 200 that are subsequently formed every
From.
In the present embodiment, the material of the first medium structure 220 is silica.In other embodiments, described first
The material of dielectric structure can also be low k dielectric materials.
In the present embodiment, the material of first connector 231 is copper, aluminium or tungsten, and the first interconnection material of metal 232 is
Copper, aluminium or tungsten.
In the present embodiment, form first connector 231, first and interconnect metal 232 and the first medium structure 220
The step of include：First medium structure 220 is formed on the surface of substrate 200；In the bonding pad C first mediums structure 220
Middle formation interconnection openings；Contact hole, the contact hole bottom are formed in the first medium structure 220 of the interconnection openings bottom
Expose the grid structure 201；In the contact hole, in the interconnection openings and surface of first medium structure 220 formed
Interconnection layer；The interconnection layer on the surface of first medium structure 220 is removed, the first connector 231 is formed in the contact hole, in institute
State and the first interconnection metal 232 is formed in interconnection openings.
In the present embodiment, the material of the interconnection layer is copper.
Forming the technique of the first medium structure 220 includes chemical vapor deposition method.
Forming the technique of the interconnection layer includes electroplating technology；Remove the interconnection layer on the surface of first medium structure 220
Technique include chemical mechanical milling tech.
In other embodiments, the material of first connector is tungsten or aluminium, and the material of the first interconnection metal is aluminium
Or tungsten.The first interconnection metal is located at first connector and part first medium body structure surface.Formed first connector,
The step of first interconnection metal and first medium structure, includes：First medium structure is formed in the substrate surface；Described
Contact hole is formed in one dielectric structure, the contact hole bottom-exposed goes out the grid structure；In the contact hole and described
One dielectric structure surface forms interconnection layer；Processing is patterned to the interconnection layer, first is formed in the contact hole and is inserted
Plug, and form the first interconnection metal in first connector and part first medium body structure surface.
Fig. 5 and Fig. 6 are refer to, Fig. 6 is Fig. 5 top view, and second medium is formed on the surface of first medium structure 220
Structure 230, has the second connector 252 and the second interconnection metal 251 in the bonding pad C second mediums structure 230, and described second
Interconnection metal 251 is located at the surface of the second connector 252, has reflective structure 240 in the second medium structure, described reflective
Structure includes：Reflector layer 241 positioned at the center, the spacing between the face of reflector layer 241 and first is the first spacing；
Reflective frame 242 in the dielectric structure, the reflective frame 242 are located at the isolated area B, external zones or from the isolation
Area B extends to the external zones, and the spacing between the face of reflective frame 242 and first is the second spacing, and second spacing is small
In the first spacing.
There is reflective structure 240 in the dielectric structure.Described image sensor in the course of the work, through described photosensitive
Element 210 reaches the light of the reflective structure 240, can be reflected back by reflective structure 240 in photo-sensitive cell 210, makes described
The some light is converted to electric signal by photo-sensitive cell 210, so as to increase the quantum conversion of imaging sensor.
First spacing is minimum range of the surface each point of reflector layer 241 to the first face；Second spacing is reflective
Minimum range of the surface each point of frame 242 to the first face.
The reflective structure 240 includes the reflector layer 241 and reflective frame 242 positioned at the photosensitive area A.The reflector layer
241 are located at the center, and the reflective frame 242 is located at the isolated area B, external zones or extends to institute from the isolated area B
External zones is stated, then the reflective frame is located at reflector layer periphery.Because the reflective frame is located at reflector layer periphery, and institute
State second and be smaller than the first spacing, the light that the reflective frame 242 can make to be irradiated on the reflective frame 242 is reflected back institute
State in photo-sensitive cell 210, so as to further increase the quantum conversion of imaging sensor.In addition, the reflective frame 242
It can prevent from entering neighboring photosensitive area A through isolated area medium B structure from a certain photosensitive area A light, and by neighboring photosensitive area A
Photo-sensitive cell 210 absorb, therefore the reflective frame 242 can reduce the optical crosstalk of image sensor, improve image sensing
The performance of device.
The second medium structure 230 is used between realizing the connector 252 of reflective structure 240 and second, and reflective structure
240 and second interconnection metal 251 between electric isolution；Second connector 252 and second interconnects metal 251 and is used to realize first
Interconnect the electrical connection of metal 232 and external circuit.
The line of the center of the center and photosensitive district center is perpendicular to first face.
In the present embodiment, the reflective structure 240 does not contact with second connector 252, and the reflective structure 240 with
The second interconnection metal 251 does not contact.
In the present embodiment, the reflective frame 242 is identical with the material of second connector 252.Second connector 252 with
The material of the reflective frame 242 is identical, and second connector 252 can be made to be formed with reflective frame 242 in same technique, so as to
Being capable of simplification of flowsheet.In other embodiments, the material of the reflective frame can also be with the material of second connector not
It is identical.
In the present embodiment, the reflector layer 241 is identical with the material of the second interconnection metal 251.The reflector layer 241 and
The material of two interconnection metals 251 is identical, and the reflector layer 241 can be made to interconnect metal 251 with second and formed in same technique,
So as to simplification of flowsheet.In other embodiments, the material of reflector layer 2 and the second interconnection metal can also differ.
Specifically, in the present embodiment, the reflector layer 241, reflective frame 242, the second connector 252 and the second interconnection metal
251 material is identical.The reflector layer 241, reflective frame 242, the second connector 252 and the second material for interconnecting metal 251 are copper.
In the present embodiment, the reflective structure 240, the second connector 252, second interconnection metal 251 and described the are formed
The step of second medium structure 230, includes：Second medium structure 230 is formed on the surface of first medium structure 220, it is described photosensitive
There is the first hole in area A second mediums structure 230, there is the second hole, the company in the isolated area B second mediums structure 230
Connecing in area C second mediums structure 230 has the 3rd hole and positioned at the 4th hole in the 3rd bottom hole portion, the 3rd hole and the
The second medium structure 230 is run through in four holes；In first hole, the second hole, the 3rd hole and the 4th hole, and described second
The forming metal layer on surface of dielectric structure 230；Planarization process is carried out to the metal level, removes the second medium structure 230
The metal level on surface, reflector layer 241 is formed in first hole, reflective frame 242 is formed in second hole, described the
The second interconnection metal 251 is formed in three holes, the second connector 252 is formed in the 4th hole.
In the present embodiment, first hole is also extended in the isolated area B second mediums structure 230.
In the present embodiment, the material of the metal level is copper, and in other embodiments, the material of the metal level can be with
For aluminium or tungsten.
Forming the technique of the metal level includes electroplating technology.
It should be noted that in the present embodiment, the reflector layer 241 is also located at the external zones and isolated area B second is situated between
In matter structure 230, the reflector layer 241 contacts with each other with the edge of reflective frame 242.In other embodiments, it is described reflective
Layer can not contact with reflective frame.
The step of forming first hole, the second hole, the 3rd hole and four holes includes：To the second medium structure 230
The first graphical treatment is carried out, the first hole is formed in the isolated area B and photosensitive area A second mediums structure 230, in the company
Connect the 3rd hole of formation in area C second mediums structure 230；Second of the first bottom hole portion and the 3rd bottom hole portion to the isolated area B
Dielectric structure 230 carries out second graphical processing, is formed in the second medium structure 239 in the first bottom holes of isolated area B portion
Second hole, and the 4th hole is formed in the second medium structure 230 in the 3rd bottom hole portion.
In the present embodiment, the reflective frame 242 is fully located in the isolated area B second mediums structure 230, therefore, institute
The second hole is stated to be fully located in the isolated area B second mediums structure 230.In other embodiments, the reflective frame can be certainly
The photosensitive area extends to the isolated area, then second hole extends to the isolated area from the photosensitive area.
In the present embodiment, second hole extends upward through the second medium in the side parallel to the surface of substrate 200
Structure 230, then the reflector layer 241 the photosensitive area A is completely covered.The photosensitive area A is completely covered in the reflector layer 241,
Reflection of the reflector layer 241 to the light through the light sensitive diode can be increased, so as to increase the amount of described image sensor
Sub- conversion efficiency.
In other embodiments, the reflector layer can also partly cover the photosensitive area.
In the present embodiment, the reflector layer 241 is also located in the isolated area medium B structure, and the reflector layer 241 can
The light for making to be transmitted to the isolated area medium B structure is reflected back in the light sensitive diode, so as to increase described image sensing
The quantum efficiency of device.
In the present embodiment, projecting figure of the reflector layer 241 on first face is rectangle.In other embodiments, instead
Projecting figure of the photosphere on first face can also be circular or other polygons, such as regular hexagon or equilateral triangle
Shape.
In the present embodiment, adjacent reflective structure 240 does not contact.In other embodiments, do not have between neighboring photosensitive area
During bonding pad, adjacent reflective structure can also contact with each other.
In the present embodiment, the projecting figure of the reflective frame 242 on the first face is annular.In other embodiments, institute
It is strip to state the projecting figure of reflective frame on the first face.
In the present embodiment, the number of the reflective frame 242 is multiple, the projection of each annular reflective frame 242 on the first face
Figure surrounds a photosensitive area A.In other embodiments, the projecting figure of the reflective frame on the first face surrounds multiple photosensitive
Area.
It should be noted that in the present embodiment, the number of the second medium structure 230 is multiple, multiple second mediums
Structure 230 is stacked.The reflective frame 242 is located in any one or more second medium structures 230, the reflector layer
241 are located in any one or more second medium structures 230.Specifically, the reflective frame 242 is located at and the first medium
The second medium structure 230 that structure 220 contacts.In other embodiments, the number of the second medium structure can be one.
The reflector layer 241 is in the thickness along the size on the direction in first face for the reflector layer 241.
If the thickness of the reflector layer 241 is too small, light is easily set to pass through the reflector layer 241, so as to not utilize increasing
Add the quantum conversion of imaging sensor；If the thickness of the reflector layer 241 is excessive, easily increase technology difficulty, and hold
Easily increase waste of material.Specifically, in the present embodiment, the thickness of the reflector layer 241 is 1300 angstroms~2700 angstroms.
Size of the reflector layer 241 on parallel to the face direction of substrate 200 first is according to the phase of the photosensitive area A
Size is answered to set.In the present embodiment, size of the reflector layer 241 on parallel to first face of substrate direction and the sense
Light area A corresponding size is equal.
The width of reflective frame 242 is size of the reflective frame on edge on the direction in the first face.
If the width of reflective frame 242 is too small, it is unfavorable for reducing the optical crosstalk of imaging sensor；If reflective frame 242
Width it is excessive, easily increase technology difficulty.Specifically, the reflective frame 242 is along on the direction in first face
Size be 700 angstroms~1900 angstroms.
The reflective frame 242 is in the thickness along the size in the reflective frame sidewall direction for reflective frame 242.
If the thickness of the reflective frame 242 is excessive, the integrated level of imaging sensor is easily reduced；If reflective frame 242
Thickness it is too small, light is passed through the reflective frame 242, so as to be unfavorable for reduce imaging sensor optical crosstalk.Tool
Body, in the present embodiment, the thickness of the reflective frame 242 is 300 angstroms~1500 angstroms.
Fig. 7 is refer to, passivation layer 270 is formed on the second medium structure 230 and second interconnection metal 251 surface.
The passivation layer 270 be used to isolating the second interconnection metal 251, the first connector 231, reflective structure 240 with it is outer
Boundary's environment.
The material of the passivation layer 270 includes polyimides.In other embodiments, the passivation layer can also include oxygen
SiClx or silicon nitride.
Fig. 8 is refer to, optical filter 260 is formed in second faces of photosensitive area A of substrate 200；Formed on the surface of optical filter 260
Lenticule 261.
The lenticule 261 is used for optically focused, focuses light rays on the optical filter 260.The optical filter 260 be used for pair
The light projected on the optical filter 260 is filtered.
Fig. 9 is the structural representation of another embodiment of imaging sensor of the present invention.
With Fig. 4 to embodiment illustrated in fig. 8 something in common in the present embodiment, will not be described here, difference is：
Fig. 9 is refer to, second medium structure 230 is formed on the surface of first medium structure 220；In the bonding pad C
The second connector 252 is formed in second medium structure 230；Reflective frame 242 is formed in the isolated area B second mediums structure 230；
The second interconnection metal 251 is formed on the surface of the second connector 252；Formed on the surface of photosensitive area A second mediums structure 230
Reflector layer 241.
In the present embodiment, the material of the reflector layer 241 is aluminium, tungsten or copper.The material of the reflective frame 242 be aluminium or
Tungsten.
The step of forming second connector 252 and reflective frame 242 includes：The is carried out to the second medium structure 230
Three graphical treatments, the first contact hole is formed in the isolated area B second mediums structure 230, and in the bonding pad C second
The second contact hole is formed in dielectric structure 230；In first contact hole, the second contact hole and the table of second medium structure 230
Face forms the first articulamentum；Remove first articulamentum on the surface of second medium structure 230；The shape in first contact hole
Into reflective frame 242, and reflector layer 241 is formed in the second contact hole.
The step of three graphical treatment, includes：Patterned is formed on the surface of second medium structure 230
One mask layer；The second medium structure 230 is performed etching using first mask layer as mask, forms first contact
Hole and the second contact hole.
Dry etch process is included to the technique that the second medium structure 230 performs etching.
The material of first articulamentum is aluminium, tungsten or copper.The material of second articulamentum is aluminium or tungsten.
The step of forming the second interconnection metal 251 and reflector layer 241 includes：In the reflective frame 242 and second medium knot
Structure surface forms the second articulamentum；4th graphical treatment is carried out to second articulamentum, formed in the photosensitive area A described
Reflector layer 241, and the second interconnection metal 251 is formed on the surface of the second connector 252.
The step of four graphical treatment, includes：Patterned second mask is formed in the described second connection layer surface
Layer；Second articulamentum is performed etching using second mask layer as mask.
Dry etch process is included to the technique that second articulamentum performs etching.
In the present embodiment, the reflective frame 242 is only located at the isolated area B.In other embodiments, the reflective frame is also
The photosensitive area can be extended to.
In the present embodiment, the reflector layer 241 is also located at the surface of reflective frame 242.In other embodiments, it is described anti-
Photosphere can be only located at the photosensitive area second medium body structure surface.
With continued reference to Fig. 8, the present invention also provides a kind of imaging sensor, including：Substrate 200, the substrate 200 include phase
To the first face and the second face, the substrate 200 includes multiple discrete photosensitive area A and surrounds each photosensitive area A isolated area
B, has photo-sensitive cell 210 in each photosensitive area A substrates 200 respectively, and each photosensitive area A includes center and surrounds the center respectively
The external zones in area；Dielectric structure positioned at the face of substrate 200 first, there is reflective structure 240 in the dielectric structure, it is described
Reflective structure 240 includes the reflector layer 241 being located in the center dielectric structure, between the face of reflector layer 241 and first
Spacing be the first spacing；Reflective frame 242 in the dielectric structure, the reflective frame 242 be located at the isolated area B,
External zones extends to the external zones from the isolated area B, between the spacing between the face of reflective frame 242 and first is second
Away from described second is smaller than the first spacing.
In the present embodiment, the photosensitive area A substrates 200 are completely covered in the reflector layer 241.In other embodiments, institute
The photosensitive area substrate can partly be covered by stating reflector layer.
Projecting figure of the reflector layer 241 on first face is circular or polygon.
In the present embodiment, the reflector layer 241 is also located in the isolated area medium B structure, the reflector layer 241 and institute
Reflective frame 242 is stated to contact.In other embodiments, the reflector layer can be only located in the isolated area dielectric structure, described
Reflector layer does not contact with the reflective frame.
Projecting figure is annular to the reflective frame 242 on the first face；The projecting figure bag of reflective frame 242 on the first face
Enclose one or more photosensitive area A.
Specifically, in the present embodiment, the number of the reflective frame 242 is multiple, and each reflective frame 242 is on the first face
Projecting figure surrounds a photosensitive area A.
In the present embodiment, the edge of adjacent reflective frame 242 does not contact.
In the present embodiment, the projecting figure of the reflective frame 242 on the first face is annulus or polygon ring.In other realities
Apply in example, the reflective frame is long strip type.
The reflector layer 241 is being 1300 angstroms~2700 angstroms along the size on the direction in first face.
The reflective frame 242 is being 700 angstroms~1900 angstroms along the size on the direction in first face；It is described anti-
The thickness of light frame 242 is 300 angstroms~1500 angstroms.
The material of the reflector layer 241 is copper, aluminium or tungsten；The material of the reflective frame 242 is copper, aluminium or tungsten.
Imaging sensor also includes：Filter plate 260 positioned at each faces of photosensitive area A second of the substrate 200；Positioned at each filtering
The lenticule 261 on the surface of piece 260.
Figure 10 and Figure 11 is the structural representation of another embodiment of imaging sensor of the present invention.
Figure 10 and Figure 11 are refer to, Figure 11 is Figure 10 top view, eliminates dielectric structure in Figure 11, in the present embodiment
The something in common of imaging sensor and imaging sensor shown in Fig. 8, will not be described here, difference is：
In the present embodiment, the bonding pad C is located at isolated area B and photosensitive area A sides.Do not have between the B of adjacent isolation regions
Bonding pad C.
In the present embodiment, multiple photosensitive area A reflector layer 241 contacts with each other, and forms an entirety.Multiple photosensitive area A's
Reflector layer 241, which contacts with each other, can increase the reflection of light of the reflector layer 241 to passing through the light sensitive diode, so as to increase
State the conversion quantum efficiency of imaging sensor.
In the present embodiment, the edge of neighboring photosensitive frame 242 contacts with each other, and multiple photosensitive frames 242 is formed first overall.It is described
Photosensitive frame 242 is located at the isolated area B, and the edge of photosensitive frame 242 and the photosensitive area A EDGE CONTACTs.In other embodiments,
Neighboring photosensitive frame can not contact.
Figure 12 is the structural representation of the another embodiment of imaging sensor of the present invention.
The something in common of Figure 12, Figure 12 and Figure 10 and the imaging sensor shown in Figure 11 is refer to, is not repeated herein,
Difference is：
In the present embodiment, the reflective frame 242 does not contact with the photosensitive area A.The reflector layer 241 be also located at it is described every
From area B.Size of the reflector layer 241 on parallel to the face direction of substrate 200 first is first size, the photosensitive area
For A along being the second size parallel to the size on the first face direction, the first size is more than corresponding second size.
In the present embodiment, adjacent reflective frame 242 does not contact.In other embodiments, adjacent reflective frame edge can be mutual
Contact.
Although present disclosure is as above, the present invention is not limited to this.Any those skilled in the art, this is not being departed from
In the spirit and scope of invention, it can make various changes or modifications, therefore protection scope of the present invention should be with claim institute
The scope of restriction is defined.
Claims (10)
- A kind of 1. imaging sensor, it is characterised in that including：Substrate, the substrate include relative the first face and the second face, and the substrate includes multiple discrete photosensitive areas and bag The isolated area of each photosensitive area is enclosed, there is photo-sensitive cell respectively in each photosensitive area substrate, each photosensitive area includes center and bag respectively Enclose the external zones of the center；Dielectric structure positioned at first face of substrate surface, there is reflective structure, the reflective structure in the dielectric structure Including：Reflector layer in the center dielectric structure, the spacing between the reflector layer and the first face are the first spacing； Reflective frame in the dielectric structure, the reflective frame are located at the isolated area, external zones or extended from the isolated area To the external zones, the spacing between the reflective frame and the first face is the second spacing, and described second is smaller than the first spacing.
- 2. imaging sensor as claimed in claim 1, it is characterised in that the photosensitive area is completely covered in the reflector layer.
- 3. imaging sensor as claimed in claim 1, it is characterised in that the reflective frame is located at the isolated area, described anti- Light frame edge and the reflector layer EDGE CONTACT.
- 4. imaging sensor as claimed in claim 1, it is characterised in that the projecting figure of the reflective frame on the first face is Annular；The projecting figure of reflective frame on the first face surrounds one or more photosensitive areas.
- 5. imaging sensor as claimed in claim 1, it is characterised in that adjacent reflector layer edge contacts with each other；It is adjacent reflective The edge of frame contacts with each other.
- 6. imaging sensor as claimed in claim 1, it is characterised in that the reflector layer is along perpendicular to first face Size on direction is 1300 angstroms~2700 angstroms；The reflective frame is being along size on the direction in first face 700 angstroms~1900 angstroms；The reflective frame is being 300 angstroms~1500 angstroms along the size on the direction of reflective frame side wall.
- 7. imaging sensor as claimed in claim 1, it is characterised in that the material of the reflector layer is copper, aluminium or tungsten；It is described The material of reflective frame is copper, aluminium or tungsten.
- A kind of 8. forming method of imaging sensor, it is characterised in that including：Substrate is provided, the substrate includes relative the first face and the second face, the substrate including multiple discrete photosensitive areas with And the isolated area of each photosensitive area is surrounded, there is photo-sensitive cell respectively in each photosensitive area substrate；Dielectric structure and the reflective structure in the dielectric structure, the reflective structure are formed in the face of substrate first Including：Reflector layer in the center dielectric structure, the spacing between the reflector layer and the first face are the first spacing； Reflective frame in the dielectric structure, the reflective frame are located at the isolated area, external zones or extended from the isolated area To the external zones, the spacing between the reflective frame and the first face is the second spacing, and described second is smaller than the first spacing.
- 9. the forming method of imaging sensor as claimed in claim 8, it is characterised in that the substrate also includes bonding pad； The dielectric structure includes：First medium structure positioned at the face of substrate first；Positioned at the first medium body structure surface Second medium structure；The forming method also includes：The first connector is formed in the bonding pad first medium layer；In the first connector table Face forms the first interconnection metal；The second connector is formed in the bonding pad second dielectric layer, in the second plug surface shape Into the second interconnection metal, the second interconnection metal is located at second plug surface, second connector and described first mutual Join metal electrical connection；The reflective frame and the reflector layer are located in the second medium structure；The step of forming the dielectric structure, the first connector, the first interconnection metal, the second connector and the second interconnection metal includes： First medium structure is formed in the substrate surface, there is the first connector and positioned at institute in the bonding pad first medium structure State the first interconnection metal of the first plug surface；Second medium structure is formed in the first medium body structure surface, it is described photosensitive There is the first hole in area's second medium structure, there is the second hole, the bonding pad second in the isolated area second medium structure There is the 3rd hole and positioned at the 4th hole in the 3rd bottom hole portion in dielectric structure, the 3rd hole is with the 4th hole through described Second medium structure；In first hole, the second hole, the 3rd hole and the 4th hole, and the second medium body structure surface shape Into metal level；Planarization process is carried out to the metal level, removes the metal level of the second medium body structure surface, described the Reflector layer is formed in one hole, reflective frame is formed in second hole, the second interconnection metal is formed in the 3rd hole, in institute State in the 4th hole and form the second connector；Or the reflector layer is located at the isolated area second medium body structure surface；The step of forming the dielectric structure, the first connector, the first interconnection metal, the second connector and the second interconnection metal includes： First medium structure is formed in the substrate surface, there is the first connector and positioned at described first in the first medium structure First interconnection metal of plug surface；Second medium structure is formed in the first medium body structure surface；In the bonding pad The second connector is formed in second medium structure；Reflective frame is formed in the isolated area second medium structure；In second connector Surface forms the second interconnection metal；Formed in the photosensitive area second medium body structure surface reflective.
- 10. the forming method of imaging sensor as claimed in claim 9, it is characterised in that of the second medium structure Number is multiple, and multiple second medium structures are stacked；The reflective frame is located in any one or more second medium structures, The reflector layer is located in any one or more second medium structures.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711065060.1A CN107845651A (en) | 2017-11-02 | 2017-11-02 | Imaging sensor and forming method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711065060.1A CN107845651A (en) | 2017-11-02 | 2017-11-02 | Imaging sensor and forming method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107845651A true CN107845651A (en) | 2018-03-27 |
Family
ID=61682271
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711065060.1A Pending CN107845651A (en) | 2017-11-02 | 2017-11-02 | Imaging sensor and forming method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107845651A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109786414A (en) * | 2019-03-14 | 2019-05-21 | 德淮半导体有限公司 | Imaging sensor and forming method thereof |
| CN111668243A (en) * | 2019-03-08 | 2020-09-15 | 力晶科技股份有限公司 | Image sensor and method for manufacturing the same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104576660A (en) * | 2013-10-10 | 2015-04-29 | 豪威科技(上海)有限公司 | Backside illuminated CMOS sensor and preparation method thereof |
| CN104637969A (en) * | 2015-02-15 | 2015-05-20 | 格科微电子（上海）有限公司 | Image sensor |
| CN106409848A (en) * | 2015-07-30 | 2017-02-15 | 力晶科技股份有限公司 | Image sensor |
-
2017
- 2017-11-02 CN CN201711065060.1A patent/CN107845651A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104576660A (en) * | 2013-10-10 | 2015-04-29 | 豪威科技(上海)有限公司 | Backside illuminated CMOS sensor and preparation method thereof |
| CN104637969A (en) * | 2015-02-15 | 2015-05-20 | 格科微电子（上海）有限公司 | Image sensor |
| CN106409848A (en) * | 2015-07-30 | 2017-02-15 | 力晶科技股份有限公司 | Image sensor |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111668243A (en) * | 2019-03-08 | 2020-09-15 | 力晶科技股份有限公司 | Image sensor and method for manufacturing the same |
| CN111668243B (en) * | 2019-03-08 | 2023-05-02 | 力晶积成电子制造股份有限公司 | Image sensor and method for manufacturing the same |
| CN109786414A (en) * | 2019-03-14 | 2019-05-21 | 德淮半导体有限公司 | Imaging sensor and forming method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11843015B2 (en) | Image sensors | |
| US11227886B2 (en) | Mechanisms for forming image sensor device | |
| JP5538811B2 (en) | Solid-state image sensor | |
| US7709872B2 (en) | Methods for fabricating image sensor devices | |
| JP5172819B2 (en) | Solid-state imaging device | |
| CN107240593B (en) | Stacked global exposure pixel unit structure and forming method thereof | |
| US7791158B2 (en) | CMOS image sensor including an interlayer insulating layer and method of manufacturing the same | |
| US7615399B2 (en) | Fabrication method of complementary metal oxide semiconductor image sensor | |
| CN106229322B (en) | A kind of back-illuminated stack overall situation exposing pixels cellular construction and forming method thereof | |
| KR20130016518A (en) | Stacking substrate image sensor with dual sensing | |
| CN107195648B (en) | Low-noise high-sensitivity global pixel unit structure and forming method thereof | |
| TW201515201A (en) | Imaging devices | |
| CN112331684B (en) | Image sensor and method of forming the same | |
| CN109411492B (en) | Stacked image sensor pixel structure and preparation method | |
| CN111129053B (en) | Pixel unit structure of CMOS image sensor and forming method | |
| CN108630714B (en) | Image sensor, forming method and working method thereof | |
| CN104425519A (en) | Image sensor and formation method thereof | |
| JP5535261B2 (en) | Solid-state imaging device | |
| CN107845651A (en) | Imaging sensor and forming method thereof | |
| CN105762160B (en) | Back-illuminated global pixel unit structure and preparation method thereof | |
| CN109065564B (en) | Image sensor and forming method thereof | |
| CN105655361B (en) | Backside illuminated CMOS image sensor and method for forming the same | |
| CN109273475B (en) | Image sensor and forming method thereof | |
| CN112992954A (en) | CMOS image sensor and method of manufacturing the same | |
| JP7457989B2 (en) | Photodetector, solid-state imaging device, and method for manufacturing photodetector |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20180327 |