CN107840577A - A kind of high rigidity glass ceramics - Google Patents
A kind of high rigidity glass ceramics Download PDFInfo
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- CN107840577A CN107840577A CN201711022195.XA CN201711022195A CN107840577A CN 107840577 A CN107840577 A CN 107840577A CN 201711022195 A CN201711022195 A CN 201711022195A CN 107840577 A CN107840577 A CN 107840577A
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- CN
- China
- Prior art keywords
- weight
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- glass ceramics
- high rigidity
- rigidity glass
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000002241 glass-ceramic Substances 0.000 title claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 15
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims abstract description 14
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 14
- 229910052593 corundum Inorganic materials 0.000 claims abstract description 14
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 14
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 14
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 14
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 14
- 229910001845 yogo sapphire Inorganic materials 0.000 claims abstract description 14
- FUJCRWPEOMXPAD-UHFFFAOYSA-N Li2O Inorganic materials [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 claims description 15
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 claims description 15
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(III) oxide Inorganic materials O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims description 12
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 229910052710 silicon Inorganic materials 0.000 description 19
- 239000010703 silicon Substances 0.000 description 19
- 239000010408 film Substances 0.000 description 9
- 239000010409 thin film Substances 0.000 description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000001953 recrystallisation Methods 0.000 description 2
- 238000006124 Pilkington process Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
- C03C10/0036—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and a divalent metal oxide as main constituents
- C03C10/0045—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and a divalent metal oxide as main constituents containing SiO2, Al2O3 and MgO as main constituents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
Abstract
The present invention relates to a kind of high rigidity glass ceramics.High rigidity glass ceramics provided by the invention, include the component of following parts by weight：SiO2For 20 40, B2O3For 15, P2O5For 5 15, Al2O3It is that 3 10, CaO is 2 12, Li for 5 15, MgO2O is 1 10, ZrO2It is that 2 10, PBO is 2 15 for 58, BaO.The mechanical performances such as density, modulus of elasticity and the rigidity of high rigidity glass ceramics provided by the invention are more preferable, it is applied to the substrate of optics and electronic component, even if its thickness very little, surface area it is very big in the case of can also be manufactured with high accuracy and high homogeneity, and its manufacturing cost, than relatively low, the substrate that the high rigidity glass ceramics makes can be used for manufacturing solar cell.
Description
Technical field
The invention belongs to solar energy and environmental protection and energy saving technical field, more particularly to a kind of high rigidity glass ceramics.
Background technology
At present, the mainly amorphous thin film silicon (a-Si) on substrate is applied.Amorphous thin film silicon is deposited on substrate
Method needed for temperature be typically about 450 DEG C.Compared with a-Si elements, polycrystal film silicon (poly- is used in respective element
Si some absolute sexual clorminances) can be shown, polycrystal film silicon has considerably higher electron mobility.For example, LCD resolution ratio and
Reaction speed can significantly improve.And then this has started on the plate for the attaching integrated circuits installed (on-board) integrated new
Method, if a-Si devices, then installed on LCD edge, for example with the form of additional chip.In the art, it is more
Brilliant thin film silicon is obtained by the recrystallization of the a-Si on substrate.In principle, this method is by heating silicon layer to making a-
Si crystallization temperature and be achieved.
Thus, the difference between low-temperature polysilicon thin film silicon and high temperature polysilicon thin film silicon is that low-temperature polysilicon thin film silicon is logical
Local heating silicon layer is crossed to obtain to 600 DEG C, and high temperature polysilicon thin film silicon is formed under about 900 DEG C of technological temperature.For
This polycrystal film silicon product is manufactured, whole element can be heated to relevant temperature (HT polycrystal films silicon), or it is logical in addition
Cross and required temperature is locally being produced through surface (superficial layer) with corresponding grating pattern movement excimer laser.By
Polycrystal film silicon in the element of the method manufacture referred to afterwards is typically uneven.Said elements may show for example to make
People is unsatisfied so-called " pin mark defect ".It is more in order to reach identical integrated level, low temperature in the case of high temperature polysilicon thin film silicon
Brilliant film silicon cell must be by long time treatment, generally will be more than 20 hours.
In view of to obtain highly integrated the fact that need a variety of photoetching processes of transistor, polycrystal film silicon cell must
The temperature of recrystallization circulation must be withstood in the nature of things, while its physical dimension is without significant changes (contraction), to avoid
Deviation (if yes) between superimposed layer and between contact point.Generally, it is only implemented minimum to shrink admissible error
The part extended laterally of circuit unit；Compared with whole substrate, it is 50ppm generally to limit it.To avoid in substrate and Si
Stress between layer, the thermal coefficient of expansion of two kinds of materials must cooperate, or must be equal.So far, it is only applicable to more
The polycrystal film silicon cell of brilliant film silicon cell is by amorphous Si O2(quartz glass) forms, and is complicated and involves great expense
's.
The content of the invention
In view of the problems of prior art, the present invention provides a kind of high rigidity glass ceramics, has preparation method letter
Singly, the advantages that cost is cheap good.
The technical scheme that the present invention solves above-mentioned technical problem is as follows：A kind of high rigidity glass ceramics, including following weight
The component of part：SiO2For 10-50, B2O3For 7-12, P2O5For 8-20, Al2O3For 20-30, MgO 12-15, CaO 15-20,
Li2O is 5-15, ZrO2For 6-10, BaO 11-18, PBO 10-20, GeO2For 2-8, Bi2O3For 3-12.
Further, the SiO2For 10 parts by weight, B2O3For 7 parts by weight, P2O5For 8 parts by weight, Al2O3For 20 weight
Part, MgO is 12 parts by weight, and CaO is 15 parts by weight, Li2O is 5 parts by weight, ZrO2For 6 parts by weight, BaO is 11 parts by weight, and PBO is
10 parts by weight, GeO2For 2 parts by weight, Bi2O3For 3 parts by weight.
Further, the SiO2For 50 parts by weight, B2O3For 12 parts by weight, P2O5For 20 parts by weight, Al2O3For 30 weight
Part, MgO is 15 parts by weight, and CaO is 20 parts by weight, Li2O is 15 parts by weight, ZrO2For 10 parts by weight, BaO is 18 parts by weight, PBO
For 20 parts by weight, GeO2For 8 parts by weight, Bi2O3For 12 parts by weight.
Further, the SiO2For 30 parts by weight, B2O3For 10 parts by weight, P2O5For 18 parts by weight, Al2O3For 25 weight
Part, MgO is 13 parts by weight, and CaO is 16 parts by weight, Li2O is 10 parts by weight, ZrO2For 18 parts by weight, BaO is 15 parts by weight, PBO
For 15 parts by weight, GeO2For 6 parts by weight, Bi2O3For 8 parts by weight.
Present invention also offers a kind of Semiconductor substrate, and the substrate is as the high rigidity glass ceramics group described in any of the above-described
Into.
Embodiment
The principles and features of the present invention are described below, and the given examples are served only to explain the present invention, is not intended to limit
Determine the scope of the present invention.
A kind of high rigidity glass ceramics, include the component of following parts by weight：SiO2For 10-50, B2O3For 7-12, P2O5For 8-
20, Al2O3For 20-30, MgO 12-15, CaO 15-20, Li2O is 5-15, ZrO2It is for 6-10, BaO 11-18, PBO
10-20, GeO2For 2-8, Bi2O3For 3-12.
Inventor has carried out the screening experiment of substantial amounts of component and dosage early stage, is found surprisingly that, technology of the invention
Scheme is by reasonably matching and the combination of each component has high fracture strength and high elastic modulus (specific stiffness：E/ ρ) etc. machine
Tool performance, it is applied to the substrate of optics and electronic component, even if its thickness very little, surface area it is very big in the case of also can be with height
Precision and high homogeneity manufacture, and its manufacturing cost is than relatively low；The high rigidity glass ceramics can use float glass process
Processing, can be transparent, especially suitable is thin film semiconductor's substrate, is particularly used for display application, solar cell
Deng.
It is introduced below by specific embodiment.
Embodiment 1
A kind of high rigidity glass ceramics, include the component of following parts by weight：SiO2For 10 parts by weight, B2O3For 7 parts by weight,
P2O5For 8 parts by weight, Al2O3For 20 parts by weight, MgO is 12 parts by weight, and CaO is 15 parts by weight, Li2O is 5 parts by weight, ZrO2For 6
Parts by weight, BaO are 11 parts by weight, and PBO is 10 parts by weight, GeO2For 2 parts by weight, Bi2O3For 3 parts by weight.
Embodiment 2
A kind of high rigidity glass ceramics, include the component of following parts by weight：The SiO2For 50 parts by weight, B2O3For 12 weights
Measure part, P2O5For 20 parts by weight, Al2O3For 30 parts by weight, MgO is 15 parts by weight, and CaO is 20 parts by weight, Li2O is 15 parts by weight,
ZrO2For 10 parts by weight, BaO is 18 parts by weight, and PBO is 20 parts by weight, GeO2For 8 parts by weight, Bi2O3For 12 parts by weight.
Embodiment 3
A kind of high rigidity glass ceramics, include the component of following parts by weight：The SiO2For 30 parts by weight, B2O3For 10 weights
Measure part, P2O5For 18 parts by weight, Al2O3For 25 parts by weight, MgO is 13 parts by weight, and CaO is 16 parts by weight, Li2O is 10 parts by weight,
ZrO2For 18 parts by weight, BaO is 15 parts by weight, and PBO is 15 parts by weight, GeO2For 6 parts by weight, Bi2O3For 8 parts by weight.
Comparative example 1
Li2O and GeO are not put in this comparative example2, the SiO2For 9 parts by weight, B2O3For 7 parts by weight, P2O5For 8 weight
Part, Al2O3For 20 parts by weight, MgO is 12 parts by weight, and CaO is 15 parts by weight, Li2O is 5 parts by weight, ZrO2For 6 parts by weight, BaO
For 11 parts by weight, PBO is 10 parts by weight.
The present invention also provides a kind of Semiconductor substrate, and the substrate is as the high rigidity glass ceramics group described in any of the above-described
Into.
Measure of merit
The performance of the high rigidity glass ceramics of above-described embodiment and comparative example preparation is determined respectively.
Test result is as shown in table 1.
Table 1
| Density (g/cm3) | Modulus of elasticity (GPa) | Rigidity (MJ/kg) | |
| Embodiment 1 | 3.21 | 108.55 | 40.2 |
| Embodiment 2 | 3.15 | 107.48 | 40.1 |
| Embodiment 3 | 3.08 | 106.33 | 38.7 |
| Comparative example 1 | 2.47 | 89.21 | 29.78 |
Data in table 1 can be seen that the density of the high rigidity glass ceramics of technical scheme offer, bullet
The property mechanical performance such as modulus and rigidity is more preferable, and especially rigidity will get well more than the sensitivity in comparative example 1, in ceramic glass in the application
Li2O and GeO are with the addition of in glass2, therefore can significantly increase the rigidity of high rigidity glass ceramics, so it is the application life
The high rigidity glass ceramics of production is applied to the substrate of optics and electronic component, even if the situation that its thickness very little, surface area are very big
Under can also be manufactured with high accuracy and high homogeneity, and its manufacturing cost is than relatively low.
The foregoing is only presently preferred embodiments of the present invention, be not intended to limit the invention, it is all the present invention spirit and
Within principle, any modification, equivalent substitution and improvements made etc., it should be included in the scope of the protection.
Claims (5)
1. a kind of high rigidity glass ceramics, it is characterised in that include the component of following parts by weight：SiO2For 10-50, B2O3For 7-
12, P2O5For 8-20, Al2O3For 20-30, MgO 12-15, CaO 15-20, Li2O is 5-15, ZrO2For 6-10, BaO 11-
18, PBO 10-20, GeO2For 2-8, Bi2O3For 3-12.
2. high rigidity glass ceramics according to claim 1, it is characterised in that：The SiO2For 10 parts by weight, B2O3For 7
Parts by weight, P2O5For 8 parts by weight, Al2O3For 20 parts by weight, MgO is 12 parts by weight, and CaO is 15 parts by weight, Li2O is 5 parts by weight,
ZrO2For 6 parts by weight, BaO is 11 parts by weight, and PBO is 10 parts by weight, GeO2For 2 parts by weight, Bi2O3For 3 parts by weight.
3. high rigidity glass ceramics according to claim 1, it is characterised in that：The SiO2For 50 parts by weight, B2O3For 12
Parts by weight, P2O5For 20 parts by weight, Al2O3For 30 parts by weight, MgO is 15 parts by weight, and CaO is 20 parts by weight, Li2O is 15 weight
Part, ZrO2For 10 parts by weight, BaO is 18 parts by weight, and PBO is 20 parts by weight, GeO2For 8 parts by weight, Bi2O3For 12 parts by weight.
4. high rigidity glass ceramics according to claim 1, it is characterised in that：The SiO2For 30 parts by weight, B2O3For 10
Parts by weight, P2O5For 18 parts by weight, Al2O3For 25 parts by weight, MgO is 13 parts by weight, and CaO is 16 parts by weight, Li2O is 10 weight
Part, ZrO2For 18 parts by weight, BaO is 15 parts by weight, and PBO is 15 parts by weight, GeO2For 6 parts by weight, Bi2O3For 8 parts by weight.
5. a kind of Semiconductor substrate, the substrate is made up of the high rigidity glass ceramics as described in any one of Claims 1-4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711022195.XA CN107840577A (en) | 2017-10-26 | 2017-10-26 | A kind of high rigidity glass ceramics |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711022195.XA CN107840577A (en) | 2017-10-26 | 2017-10-26 | A kind of high rigidity glass ceramics |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107840577A true CN107840577A (en) | 2018-03-27 |
Family
ID=61663061
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711022195.XA Pending CN107840577A (en) | 2017-10-26 | 2017-10-26 | A kind of high rigidity glass ceramics |
Country Status (1)
| Country | Link |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1275542A (en) * | 1999-06-01 | 2000-12-06 | 株式会社小原 | High rigidity glass ceramic substrate |
| CN1955131A (en) * | 2005-10-25 | 2007-05-02 | 株式会社小原 | Glass-ceramics and a method for manufacturing the same |
-
2017
- 2017-10-26 CN CN201711022195.XA patent/CN107840577A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1275542A (en) * | 1999-06-01 | 2000-12-06 | 株式会社小原 | High rigidity glass ceramic substrate |
| CN1955131A (en) * | 2005-10-25 | 2007-05-02 | 株式会社小原 | Glass-ceramics and a method for manufacturing the same |
| CN1955131B (en) * | 2005-10-25 | 2012-03-21 | 株式会社小原 | Glass-ceramics and a method for manufacturing the same |
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Application publication date: 20180327 |
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