CN107833929A - The silicon heterogenous battery and manufacture method of a kind of one texture-etching side - Google Patents
The silicon heterogenous battery and manufacture method of a kind of one texture-etching side Download PDFInfo
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- CN107833929A CN107833929A CN201710970124.6A CN201710970124A CN107833929A CN 107833929 A CN107833929 A CN 107833929A CN 201710970124 A CN201710970124 A CN 201710970124A CN 107833929 A CN107833929 A CN 107833929A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 22
- 239000010703 silicon Substances 0.000 title claims abstract description 22
- 238000005530 etching Methods 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 title claims abstract description 9
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 8
- 238000002161 passivation Methods 0.000 claims abstract description 35
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 23
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 20
- 238000004544 sputter deposition Methods 0.000 claims abstract description 10
- 238000000151 deposition Methods 0.000 claims description 7
- 238000007650 screen-printing Methods 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 abstract description 4
- 230000007547 defect Effects 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 230000005611 electricity Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 230000001795 light effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present invention discloses the silicon heterogenous battery and manufacture method of a kind of one texture-etching side, using the n type single crystal silicon piece of one texture-etching side, in textured surfaces deposited amorphous silicon passivation layer and back surface field N layers, in polished surface deposited amorphous silicon passivation layer and emitter stage P layers, so that battery had both met front and absorbed more light, meet PN junction interface again and obtain good passivation, the defects of reducing battery the density of states, the photo-generated carrier of reduction it is compound, improve the open-circuit voltage of battery.In combination with burnishing surface splash-proofing sputtering metal mode, more preferable infrared light reflection effect can be obtained, improves the short circuit current of battery.
Description
Technical field
The present invention relates to solar cell, belongs to photovoltaic art.
Technical background
Silicon heterogenous solar cell has the conversion efficiency higher than conventional crystalline silicon battery, also with temperature coefficient it is low,
The advantages of dim light performance is good, more and more extensive concern is received, be a main trend of following solar battery technology development.
The usual structure of silicon heterogenous battery and preparation method are：Two-sided making herbs into wool, cleaning are first carried out to N-type silicon chip, it is redeposited
Intrinsic amorphous silicon passivation layer, emitter stage P layers and back surface field N layers, finally deposit transparent conductive film and screen-printed metal electrode.
This structure obtains because amorphous silicon passivation layer, emitter stage P layers all deposit in textured surfaces, result in emitter stage contact interface face
Product is big, and defect state density increases, and the complex centre of battery result in photo-generated carrier more to be captured well, have impact on battery
Conversion efficiency.
Patent [CN103972325A] discloses a kind of monocrystalline silicon piece one texture-etching side method, and patent [CN102694056A] is public
Cloth a kind of tooling device used in single crystal silicon solar cell one texture-etching side, prior art are applied to traditional monocrystalline silicon battery
Preparation, enhance Al-BSF effect, improve battery performance, but prior art is without the non-crystalline silicon for silicon heterogenous battery
Passivation, photo-generated carrier caused by not solving the problems, such as silicon heterogenous battery emitter stage boundary defect are compound excessive.
The content of the invention
For the deficiency of present technology, the present invention provides a kind of silicon heterogenous battery and manufacture method of one texture-etching side, from
And increase emitter stage PN junction interface amorphous silicon passivation effect, the compound of photo-generated carrier is reduced, open-circuit voltage is improved with this.
The present invention specifically adopts the following technical scheme that：
The silicon heterogenous battery of a kind of one texture-etching side, it is characterised in that the n type single crystal silicon piece including one texture-etching side, P faces non-crystalline silicon
Passivation layer, N faces amorphous silicon passivation layer, emitter stage P layers, back surface field N layers, back side ITO layer, positive ITO layer, screen-printed metal electricity
Pole, splash-proofing sputtering metal layer；The burnishing surface of the n type single crystal silicon piece is shady face, and matte is smooth surface；Described P faces non-crystalline silicon is blunt
Change layer, emitter stage P layers, back side ITO layer, splash-proofing sputtering metal layer to be sequentially located at below the burnishing surface of n type single crystal silicon piece；Described N faces
Amorphous silicon passivation layer, back surface field N layers, positive ITO layer are sequentially located above the matte of n type single crystal silicon piece；The screen-printed metal
Electrode is arranged in positive ITO layer.
The manufacture method of above-mentioned battery is as follows：
Step 1, one texture-etching side is carried out to n type single crystal silicon piece, matte is smooth surface, and burnishing surface is shady face；
Step 2, intrinsic amorphous silicon passivation layer, emitter stage P layers are sequentially depositing in burnishing surface；
Step 3, intrinsic amorphous silicon passivation layer, back surface field N layers are sequentially depositing in matte；
Step 4, transparent conductive film ITO layer is deposited on emitter stage P layers, back surface field N layers respectively；
Step 5, front metal electrode is obtained using screen printing mode in the transparent conductive film ITO layer of smooth surface；
Step 6, back metal is obtained by the way of observing and controlling splash-proofing sputtering metal layer in the transparent conductive film ITO layer of shady face
Electrode.
The silicon heterogenous battery of the present invention uses twin polishing and one texture-etching side technique, obtains the n type single crystal silicon of one texture-etching side
Piece, in textured surfaces deposited amorphous silicon passivation layer and back surface field N layers, in polished surface deposited amorphous silicon passivation layer and emitter stage P layers,
So that battery had both met front and absorbed more light, PN junction interface is met again and obtains good passivation, reduces electricity
The defects of pond the density of states, the photo-generated carrier of reduction it is compound, improve the open-circuit voltage of battery.Sputtered in combination with burnishing surface
Metal mode, more preferable infrared light reflection effect can be obtained, improve the short circuit current of battery.
The silicon heterogenous battery open circuit voltage of conventional structure is usually 730mv or so, and battery conversion efficiency is 21.5% ~
22%.Using one texture-etching side, intrinsic amorphous silicon passivation, deposition emitter stage P layers are carried out in burnishing surface, and PN junction is placed in shady face,
The silicon heterogenous battery open circuit voltage prepared can be promoted to more than 735mv, battery conversion efficiency can improve to 22.5% with
On.
Brief description of the drawings
Fig. 1 is the structural representation of the silicon heterogenous battery of the present invention.
Embodiment
Embodiment
With reference to embodiment, the invention will be further described, but not as the restriction to technical scheme.
As shown in figure 1, a kind of silicon heterogenous battery of one texture-etching side, including the n type single crystal silicon piece 1 of one texture-etching side, P faces are non-
Crystal silicon passivation layer 2, N faces amorphous silicon passivation layer 3, emitter stage P layers 4, back surface field N layers 5, back side ITO layer 6, positive ITO layer 7, screen printing
Brush metal electrode 8 and splash-proofing sputtering metal layer 9.The burnishing surface of n type single crystal silicon piece 1 is shady face, and matte is smooth surface.P faces amorphous
Silicon passivation layer 2, emitter stage P layers 4, back side ITO layer 6, splash-proofing sputtering metal layer 9 are sequentially located at below the burnishing surface of n type single crystal silicon piece 1.N
Face amorphous silicon passivation layer 3, back surface field N layers 5, positive ITO layer 7 are sequentially located above the matte of n type single crystal silicon piece 1.Silk-screen printing gold
Category electrode 8 is arranged in positive ITO layer 7.In a particular embodiment, P faces amorphous silicon passivation layer 2 can be than N faces amorphous silicon passivation
Layer 3 is thinner, it is possible thereby to obtain higher open-circuit voltage, fill factor, curve factor and battery conversion efficiency.
The silicon heterogenous cell manufacturing method of the present invention is as follows：
Step 1, in order to avoid the current loss come in burnishing surface band of passivation, using one texture-etching side technique, first preparing one side is
Matte, it is simultaneously the n type single crystal silicon piece of burnishing surface.
Step 2, intrinsic amorphous silicon passivation layer and emitter stage P layers are sequentially depositing in burnishing surface, forms PN junction, PN junction is placed in
Shady face.
Step 3, it is smooth surface to be sequentially depositing intrinsic amorphous silicon passivation layer and back surface field N layers, matte in matte, ensure that electricity
The good sunken light effect in pond.
Step 4, back side ITO layer is deposited on emitter stage P layers, positive ITO layer is deposited on back surface field N layers.
Step 5, front metal electrode is obtained using screen printing mode in positive ITO layer, overleaf ITO layer is using survey
The mode of control splash-proofing sputtering metal layer obtains back metal electrode.
Claims (4)
- A kind of 1. silicon heterogenous battery of one texture-etching side, it is characterised in that the n type single crystal silicon piece including one texture-etching side（1）, P faces it is non- Crystal silicon passivation layer（2）, N faces amorphous silicon passivation layer（3）, emitter stage P layers（4）, back surface field N layers（5）, back side ITO layer（6）, positive ITO Layer（7）, screen-printed metal electrode（8）, splash-proofing sputtering metal layer（9）；The n type single crystal silicon piece（1）Burnishing surface be shady face, suede Face is smooth surface；Described P faces amorphous silicon passivation layer（2）, emitter stage P layers（4）, back side ITO layer（6）, splash-proofing sputtering metal layer（9）According to It is secondary to be located at n type single crystal silicon piece（1）Burnishing surface below；Described N faces amorphous silicon passivation layer（3）, back surface field N layers（5）, positive ITO Layer（7）It is sequentially located at n type single crystal silicon piece（1）Matte above；The screen-printed metal electrode（8）It is arranged on positive ITO layer （7）On.
- 2. the silicon heterogenous battery of one texture-etching side as claimed in claim 1, it is characterised in that P faces amorphous silicon passivation layer（2）'s Thickness is less than N faces amorphous silicon passivation layer（3）Thickness.
- 3. the silicon heterogenous cell manufacturing method of a kind of one texture-etching side, it is characterised in that comprise the following steps：Step 1, one texture-etching side is carried out to n type single crystal silicon piece, matte is smooth surface, and burnishing surface is shady face；Step 2, intrinsic amorphous silicon passivation layer, emitter stage P layers are sequentially depositing in burnishing surface；Step 3, intrinsic amorphous silicon passivation layer, back surface field N layers are sequentially depositing in matte；Step 4, transparent conductive film ITO layer is deposited on emitter stage P layers, back surface field N layers respectively；Step 5, front metal electrode is obtained using screen printing mode in the transparent conductive film ITO layer of smooth surface；Step 6, back metal is obtained by the way of observing and controlling splash-proofing sputtering metal layer in the transparent conductive film ITO layer of shady face Electrode.
- 4. manufacture method as claimed in claim 2, the thickness of the amorphous silicon passivation layer of its feature burnishing surface is less than the non-of matte The thickness of crystal silicon passivation layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710970124.6A CN107833929A (en) | 2017-10-13 | 2017-10-13 | The silicon heterogenous battery and manufacture method of a kind of one texture-etching side |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710970124.6A CN107833929A (en) | 2017-10-13 | 2017-10-13 | The silicon heterogenous battery and manufacture method of a kind of one texture-etching side |
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| CN107833929A true CN107833929A (en) | 2018-03-23 |
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| CN201710970124.6A Pending CN107833929A (en) | 2017-10-13 | 2017-10-13 | The silicon heterogenous battery and manufacture method of a kind of one texture-etching side |
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| Country | Link |
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| CN (1) | CN107833929A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112234115A (en) * | 2020-09-30 | 2021-01-15 | 通威太阳能（成都）有限公司 | Efficient back passivation layer crystalline silicon solar cell and preparation method thereof |
| CN113471311A (en) * | 2021-07-06 | 2021-10-01 | 安徽华晟新能源科技有限公司 | Heterojunction battery and preparation method thereof |
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| CN104380475A (en) * | 2012-05-16 | 2015-02-25 | 德国罗特·劳股份有限公司 | Hetero-contact solar cell and method for the production thereof |
| CN105390555A (en) * | 2015-12-25 | 2016-03-09 | 常州天合光能有限公司 | Full-back-electrode solar cell structure and preparation method therefor |
| CN205960003U (en) * | 2016-07-26 | 2017-02-15 | 福建金石能源有限公司 | Single crystal heterojunction solar cell with unanimous matte |
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| CN106531817A (en) * | 2015-09-08 | 2017-03-22 | 英属开曼群岛商精曜有限公司 | Semiconductor element and manufacturing method thereof |
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- 2017-10-13 CN CN201710970124.6A patent/CN107833929A/en active Pending
Patent Citations (6)
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| CN104380475A (en) * | 2012-05-16 | 2015-02-25 | 德国罗特·劳股份有限公司 | Hetero-contact solar cell and method for the production thereof |
| CN102779907A (en) * | 2012-08-14 | 2012-11-14 | 常州天合光能有限公司 | Method for preparing high-efficiency heterojunction cells |
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| CN105390555A (en) * | 2015-12-25 | 2016-03-09 | 常州天合光能有限公司 | Full-back-electrode solar cell structure and preparation method therefor |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112234115A (en) * | 2020-09-30 | 2021-01-15 | 通威太阳能（成都）有限公司 | Efficient back passivation layer crystalline silicon solar cell and preparation method thereof |
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| CN113471311A (en) * | 2021-07-06 | 2021-10-01 | 安徽华晟新能源科技有限公司 | Heterojunction battery and preparation method thereof |
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Application publication date: 20180323 |