CN107832637A - EMMC and EMMC subregion Write-protection method - Google Patents
EMMC and EMMC subregion Write-protection method Download PDFInfo
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- CN107832637A CN107832637A CN201711153769.7A CN201711153769A CN107832637A CN 107832637 A CN107832637 A CN 107832637A CN 201711153769 A CN201711153769 A CN 201711153769A CN 107832637 A CN107832637 A CN 107832637A
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F21/00—Security arrangements for protecting computers, components thereof, programs or data against unauthorised activity
- G06F21/70—Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer
- G06F21/78—Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer to assure secure storage of data
- G06F21/79—Protecting specific internal or peripheral components, in which the protection of a component leads to protection of the entire computer to assure secure storage of data in semiconductor storage media, e.g. directly-addressable memories
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- Computer Security & Cryptography (AREA)
- Computer Hardware Design (AREA)
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- Software Systems (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Storage Device Security (AREA)
Abstract
The invention discloses a kind of EMMC and EMMC subregion Write-protection method; wherein; EMMC includes flash controller and flash cell; multiple basic units of storage are included in the flash cell; the flash controller is used to receive partition information and write protection information; and subregion is carried out to EMMC flash cell according to the partition information of reception; simultaneously; the subregion specified according to write protection information to it carries out write-protect; the partition information includes the number of subregion and the size of each subregion, and the write protection information indicates the zone object of preadmission row write protection.The EMMC and EMMC subregion Write-protection method can realize the Free Partition to flash cell, while can also carry out write-protect to specified subregion as needed.
Description
Technical field
The present invention relates to chip secure technical field, specifically provides a kind of EMMC and EMMC subregion Write-protection method.
Background technology
With the continuous development of scientific technology, ROM (read-only storage) and RAM (random access memory) boundary increasingly mould
Paste.From earliest sintering ROM to EPROM, the EMMC to E2PROM, FLASH till now always, ROM have no longer been traditional meanings again
Read-only storage in justice, it has become the memory with read-write capability.As a result ROM just loses earliest appearance
When possessed internal data consistency this main feature.
EMMC is that (Embedded Multi Media Card) is that MMC associations conclude, mainly for mobile phone or tablet personal computer
Deng the embedded memory standard specification of mobile electronic product.EMMC is made up of an embedded storage solution, is being encapsulated
In be integrated with a controller, there is provided standard interface simultaneously manages flash memory, is set with MMC (multimedia card) interface, flash memory
Standby and master controller.
Existing EMMC can not be realized to the Free Partition of flash cell and be carried out write-protect, flash cell to specified partition
The data of middle storage easily change because of the attack of hacker, cause important data to lose, systemic breakdown, deadlock etc..In addition, dodge
The information that different address stores in memory cell is not required to carry out write-protect, so, write-protect is carried out to whole flash cell
Idea be irrational.
Therefore, how existing EMMC is improved, to realize to the Free Partition of EMMC flash cell and to specified
Subregion carries out write-protect, turns into people's urgent problem to be solved.
The content of the invention
In consideration of it, it is an object of the invention to provide a kind of EMMC and EMMC subregion Write-protection method, it is existing to solve
The problems such as EMMC can not be realized to the Free Partition of flash cell and to specified partition progress write-protect.
One aspect of the present invention provides the subregion Write-protection method of EMMC a kind of, comprises the following steps:
S1:Receive partition information and write protection information, the partition information include subregion number and each subregion it is big
Small, the write protection information indicates the zone object of preadmission row write protection;
S2:Subregion is carried out to EMMC flash cell according to the partition information of reception, meanwhile, according to write protection information to it
The subregion specified carries out write-protect.
It is preferred that write protection information is the number information of the zone object of preadmission row write protection.
Further preferably, the number information passes through 0,1 coded representation.
Further preferably, each basic unit of storage in the flash cell is all connected with write-protect analog switch, substantially
Memory cell receives enable signal to realize write-protect by write-protect analog switch.
Further preferably, the flash cell is one piece of core body, and a wafer in the core body is a basic storage
Unit;Or, the flash cell is made up of polylith core body, wherein, every piece of core body is a basic unit of storage.
Another aspect of the present invention provides a kind of EMMC with subregion writing protection function, including:Flash controller and sudden strain of a muscle
Memory cell, multiple basic units of storage are included in the flash cell, and the flash controller is used to receive partition information and write
Protection information, and subregion is carried out to EMMC flash cell according to the partition information of reception, meanwhile, according to write protection information to it
The subregion specified carries out write-protect, and the partition information includes the number of subregion and the size of each subregion, the write-protect letter
Breath indicates the zone object of preadmission row write protection.
Further preferably, the volume for the zone object that the write protection information that the flash controller receives is protected for preadmission row write
Number information.
Further preferably, the number information passes through 0,1 coded representation.
Further preferably, each basic unit of storage in the flash cell is all connected with write-protect analog switch, substantially
Memory cell receives enable signal to realize write-protect by write-protect analog switch.
Further preferably, the flash cell is one piece of core body, and a wafer in the core body is a basic storage
Unit;Or, the flash cell is made up of polylith core body, wherein, every piece of core body is a basic unit of storage.
EMMC and EMMC provided by the invention subregion Write-protection method, can be according to the partition information received to EMMC
Flash cell carry out Free Partition, write-protect can be carried out according to subregion that the write protection information received is specified to it, led to
The protection that can be realized to specified partition progress write-protect to information in specified partition is crossed, avoids the data in specified partition from being repaiied
Change, solve the drawbacks of software protecting for a long time, it is ensured that the security of operating system.
Brief description of the drawings
Below in conjunction with the accompanying drawings and embodiment the present invention is further detailed explanation:
Fig. 1 is the flow chart of EMMC provided by the invention subregion Write-protection method.
Embodiment
The present invention is further explained below in conjunction with specific embodiment, but the not limitation present invention.
As shown in figure 1, one aspect of the present invention provides the subregion Write-protection method of EMMC a kind of, comprise the following steps:
S1:Receive partition information and write protection information, the partition information include subregion number and each subregion it is big
Small, the write protection information indicates the zone object of preadmission row write protection;
S2:Subregion is carried out to EMMC flash cell according to the partition information of reception, meanwhile, according to write protection information to it
The subregion specified carries out write-protect.
The subregion Write-protection method of the EMMC, EMMC flash cell can be carried out certainly according to the partition information received
By subregion, write-protect can be carried out according to the subregion that the write protection information received is specified to it, by being carried out to specified partition
Write-protect can realize the protection to information in specified partition, avoid the data in specified partition from being changed.
As the improvement of technical scheme, write protection information is the number information of the zone object of preadmission row write protection, specifically
Ground, after the completion of subregion, each subregion can be numbered for system, when specifying the subregion of preadmission row write protection, can pass through subregion pair
The numbering of elephant is specified, wherein, the number information preferably passes through 0,1 coded representation.
As the improvement of technical scheme, each basic unit of storage in the flash cell is all connected with write-protect simulation and opened
Close, basic unit of storage receives enable signal to realize write-protect by write-protect analog switch.
As the improvement of technical scheme, the flash cell is one piece of core body, and a wafer in the core body is one
Basic unit of storage;Or, the flash cell is made up of polylith core body, wherein, every piece of core body is a basic unit of storage.
Another aspect of the present invention provides a kind of EMMC with subregion writing protection function, including:Flash controller and sudden strain of a muscle
Memory cell, multiple basic units of storage are included in the flash cell, and the flash controller is used to receive partition information and write
Protection information, and subregion is carried out to EMMC flash cell according to the partition information of reception, meanwhile, according to write protection information to it
The subregion specified carries out write-protect, and the partition information includes the number of subregion and the size of each subregion, the write-protect letter
Breath indicates the zone object of preadmission row write protection.
The EMMC can carry out Free Partition, Ke Yigen according to the partition information that flash controller receives to flash cell
The subregion specified according to the write protection information that flash controller receives to it carries out write-protect, is protected by entering row write to specified partition
Shield can realize the protection to information in specified partition, avoid the data in specified partition from being changed.
As the improvement of technical scheme, the write protection information that the flash controller receives is the subregion of preadmission row write protection
The number information of object, specifically, after the completion of subregion, each subregion can be numbered for system, specify the protection of preadmission row write
During subregion, it can be specified by the numbering of zone object, wherein, the number information preferably passes through 0,1 coded representation.
As the improvement of technical scheme, each basic unit of storage in the flash cell is all connected with write-protect simulation and opened
Close, basic unit of storage receives enable signal to realize write-protect by write-protect analog switch.
As the improvement of technical scheme, the flash cell is one piece of core body, and a wafer in the core body is one
Basic unit of storage;Or, the flash cell is made up of polylith core body, wherein, every piece of core body is a basic unit of storage.
The embodiment of the present invention is write according to progressive mode, highlights each embodiment
Difference, its similar portion can be with cross-reference.
Embodiments of the present invention are elaborated above in conjunction with accompanying drawing, but the present invention is not limited to above-mentioned implementation
Mode, can also be on the premise of present inventive concept not be departed from those of ordinary skill in the art's possessed knowledge
Various changes can be made.
Claims (10)
1.EMMC subregion Write-protection method, it is characterised in that comprise the following steps:
S1:Partition information and write protection information are received, the partition information includes the number of subregion and the size of each subregion, institute
State the zone object that write protection information indicates the protection of preadmission row write;
S2:Subregion is carried out to EMMC flash cell according to the partition information of reception, meanwhile, it is specified according to write protection information
Subregion carry out write-protect.
2. according to the subregion Write-protection method of the EMMC described in claim 1, it is characterised in that:Write protection information is preadmission row write
The number information of the zone object of protection.
3. according to the subregion Write-protection method of the EMMC described in claim 2, it is characterised in that:The number information passes through 0,1
Coded representation.
4. according to the subregion Write-protection method of the EMMC described in claim 1, it is characterised in that:It is each in the flash cell
Basic unit of storage is all connected with write-protect analog switch, basic unit of storage by write-protect analog switch receive enable signal come
Realize write-protect.
5. according to the subregion Write-protection method of the EMMC any one of Claims 1-4, it is characterised in that:The flash memory
Unit is one piece of core body, and a wafer in the core body is a basic unit of storage;Or, the flash cell is by polylith core
Body forms, wherein, every piece of core body is a basic unit of storage.
6. the EMMC with subregion writing protection function, it is characterised in that including:Flash controller and flash cell, the flash memory
Including multiple basic units of storage in unit, the flash controller is used to receiving partition information and write protection information, and according to
The partition information of reception carries out subregion to EMMC flash cell, meanwhile, the subregion specified according to write protection information to it is carried out
Write-protect, the partition information include the number of subregion and the size of each subregion, and the write protection information indicates preadmission row write
The zone object of protection.
7. according to the EMMC with subregion writing protection function described in claim 6, it is characterised in that:The flash controller connects
The write protection information of receipts is the number information of the zone object of preadmission row write protection.
8. according to the EMMC with subregion writing protection function described in claim 7, it is characterised in that:The number information passes through
0th, 1 coded representation.
9. according to the EMMC with subregion writing protection function described in claim 6, it is characterised in that:In the flash cell
Each basic unit of storage is all connected with write-protect analog switch, and basic unit of storage receives enabled letter by write-protect analog switch
Number realize write-protect.
10. according to the EMMC with subregion writing protection function any one of claim 6 to 9, it is characterised in that:It is described
Flash cell is one piece of core body, and a wafer in the core body is a basic unit of storage;Or, the flash cell is by more
Block core body forms, wherein, every piece of core body is a basic unit of storage.
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CN201711153769.7A CN107832637A (en) | 2017-11-20 | 2017-11-20 | EMMC and EMMC subregion Write-protection method |
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CN201711153769.7A CN107832637A (en) | 2017-11-20 | 2017-11-20 | EMMC and EMMC subregion Write-protection method |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2020063975A1 (en) * | 2018-09-29 | 2020-04-02 | 北京嘉楠捷思信息技术有限公司 | Partition protection method and apparatus for non-volatile memory |
CN113836600A (en) * | 2021-11-26 | 2021-12-24 | 上海泰矽微电子有限公司 | Embedded Flash error writing protection method |
CN114237506A (en) * | 2021-12-14 | 2022-03-25 | 四川长虹电器股份有限公司 | EMMC data storage and read-write method |
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CN103593308A (en) * | 2013-10-10 | 2014-02-19 | 福建升腾资讯有限公司 | USB (universal serial bus) flash disk write-protection method based on section write-protection |
CN104252417A (en) * | 2013-06-28 | 2014-12-31 | 联想(北京)有限公司 | Nand storage device and data storage method thereof |
CN105069381A (en) * | 2015-08-03 | 2015-11-18 | 惠州Tcl移动通信有限公司 | Intelligent terminal based partition protection method and system |
CN106155568A (en) * | 2015-04-03 | 2016-11-23 | 华为技术有限公司 | A kind of method of partition holding and terminal |
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Patent Citations (4)
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CN104252417A (en) * | 2013-06-28 | 2014-12-31 | 联想(北京)有限公司 | Nand storage device and data storage method thereof |
CN103593308A (en) * | 2013-10-10 | 2014-02-19 | 福建升腾资讯有限公司 | USB (universal serial bus) flash disk write-protection method based on section write-protection |
CN106155568A (en) * | 2015-04-03 | 2016-11-23 | 华为技术有限公司 | A kind of method of partition holding and terminal |
CN105069381A (en) * | 2015-08-03 | 2015-11-18 | 惠州Tcl移动通信有限公司 | Intelligent terminal based partition protection method and system |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2020063975A1 (en) * | 2018-09-29 | 2020-04-02 | 北京嘉楠捷思信息技术有限公司 | Partition protection method and apparatus for non-volatile memory |
CN113836600A (en) * | 2021-11-26 | 2021-12-24 | 上海泰矽微电子有限公司 | Embedded Flash error writing protection method |
CN114237506A (en) * | 2021-12-14 | 2022-03-25 | 四川长虹电器股份有限公司 | EMMC data storage and read-write method |
CN114237506B (en) * | 2021-12-14 | 2023-05-02 | 四川长虹电器股份有限公司 | Method for storing and reading/writing EMMC data |
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