CN107818988A - 柔性显示面板及其制作方法 - Google Patents

柔性显示面板及其制作方法 Download PDF

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CN107818988A
CN107818988A CN201710891601.XA CN201710891601A CN107818988A CN 107818988 A CN107818988 A CN 107818988A CN 201710891601 A CN201710891601 A CN 201710891601A CN 107818988 A CN107818988 A CN 107818988A
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metallic plate
insulating barrier
grid
flexible display
display panels
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王幸
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to CN201710891601.XA priority Critical patent/CN107818988A/zh
Priority to PCT/CN2017/112889 priority patent/WO2019061780A1/zh
Priority to US15/580,449 priority patent/US10374024B2/en
Publication of CN107818988A publication Critical patent/CN107818988A/zh
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    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
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    • G09F9/30Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/301Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED
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    • H10K59/121Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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Abstract

本发明提供一种柔性显示面板及其制作方法,所述柔性显示面板包括显示区域及非显示区域,在所述显示区域设置有薄膜晶体管,所述薄膜晶体管具有第一栅极及第二栅极,所述非显示区域包括金属走线区域及位于金属走线区域之间的空白区域,在所述空白区域设置有相对的第一金属板及一第二金属板,所述第一金属板与所述第一栅极同层,所述第二金属板与所述第二栅极同层,所述第一金属板及所述第二金属板形成电容。本发明优点在于,在非显示区域的空白区域增加电容设计,该电容具有一定缓冲静电荷释放的能力,能够减弱静电对器件内部及金属走线膜层的击伤,保护柔性显示面板在有源矩阵薄膜晶体管制作过程中金属膜层走线不受静电损伤和破坏。

Description

柔性显示面板及其制作方法
技术领域
本发明涉及显示装置领域,尤其涉及一种柔性显示面板及其制作方法。
背景技术
显示器件如LCD和OLED等作为信息交换和传递的主要载体和物质基础,已经成为越来越多人关注的焦点,并广泛应用在工作和生活的方方面面。近年来,随着人们对便携显示设备的需求日趋增大,柔性显示技术成为极具竞争优势的显示技术之一,成为业界及消费者青睐的对象。柔性显示技术的一大优点是具有可折叠性,这样可以增大显示面积而不会增大设备体积,非常便携。柔性TFT-LCD及柔性OLED等已经逐渐发展成为最有前景的高科技产业。来自不同的研究机构和企业等均推出了各式各样的柔性显示设备,如电视屏幕、手机屏幕、穿戴设备、大型商业显示屏、电脑等。
OLED(有机发光二极管,OrganicLight-EmittingDiode)的显示技术具备自发光、高亮度、宽视角、高对比度、可挠曲、低能耗等特性,因此受到广泛的关注,并作为新一代的显示方式,已开始逐渐取代传统LCD(液晶显示器,LiquidCrystalDisplay),被广泛应用在手机屏幕、电脑显示器、全彩电视等。其中,OLED柔性显示技术采用非常薄的有机材料发光层和柔性基板,当有电流通过时,这些有机材料就会发光。
OLED显示装置按照驱动方式可以分为无源矩阵型OLED(Passive Matrix OLED,PMOLED)和有源矩阵型OLED(Active Matrix OLED,AMOLED)两大类,即直接寻址和薄膜晶体管(Thin Film Transistor,TFT)矩阵寻址两类。
其中,有源矩阵型OLED具有呈阵列式排布的像素,属于主动显示类型,发光效能高,性能优异。其缺点在于,在制作过程中,累计的静电容易造成非显示区域的扇出区(fanout区)的第二栅极击伤,导致信号传输线腐蚀或者断裂,造成柔性显示面板画面显示异常。
针对以上问题,亟需一种新型的柔性显示面板及其制作方法,能够消除显示面板制作过程中累计的静电,避免膜层腐蚀等不良,保证画面正常显示。
发明内容
本发明所要解决的技术问题是,提供一种柔性显示面板及其制作方法,其能够有效提高柔性显示面板产出的良率,消除由于静电产生的膜层腐蚀等不良,保护柔性驱动面板画面显示不受破坏。
为了解决上述问题,本发明提供了一种柔性显示面板,包括一显示区域及一非显示区域,在所述显示区域设置有薄膜晶体管,所述薄膜晶体管具有一第一栅极及第二栅极,所述非显示区域包括金属走线区域及位于金属走线区域之间的空白区域,在所述空白区域设置有相对的一第一金属板及一第二金属板,所述第一金属板与所述第一栅极同层,所述第二金属板与所述第二栅极同层,所述第一金属板及所述第二金属板形成一电容。
在一实施例中,所述第一金属板及第二金属板的形状相同。
在一实施例中,所述第一金属板及第二金属板的形状为圆形或方形。
在一实施例中,所述第一栅极与所述第一金属板的厚度相同,所述第二栅极与所述第二金属板的厚度相同。
在一实施例中,所述显示区域包括柔性基底、设置在所述柔性基底上的缓冲层、设置在所述缓冲层上的有源层、覆盖所述有源层及缓冲层的第一绝缘层,所述第一栅极设置在所述第一绝缘层上,所述第一绝缘层延伸至非显示区域,且所述第一金属板设置在延伸至非显示区域的第一绝缘层上。
在一实施例中,所述柔性显示面板还包括一第二绝缘层,所述第二绝缘层覆盖所述第一栅极、所述第一金属板及所述第一绝缘层,在所述显示区域,所述第二栅极设置在所述第二绝缘层上,在非显示区域的空白区域处,所述第二金属板设置在所述第二绝缘层上。根据权利要求4所述的柔性显示面板,其特征在于,
在一实施例中,所述柔性显示装置还包括一第三绝缘层,所述第三绝缘层覆盖所述第二栅极、第二金属板及所述第二绝缘层。
在一实施例中,所述柔性显示装置还包括一源极及一漏极,所述源极及所述漏极分别穿过所述第一绝缘层、第二绝缘层及第三绝缘层,并分别与所述有源层连接。
本发明的优点在于,在非显示区域的空白区域增加一系列的电容设计,该电容具有一定缓冲静电荷释放的能力,能够减弱静电对器件内部及金属走线膜层的击伤,保护柔性显示面板在有源矩阵薄膜晶体管制作过程中金属膜层走线不受静电损伤和破坏,有效提高柔性显示面板产出的良率,消除由于静电产生的膜层腐蚀等不良,保护柔性驱动面板画面显示不受破坏。所述第一金属板及第二金属板与第一栅极及第二栅极采用同一道工艺形成,没有增加额外的制程,节约成本。
附图说明
图1是本发明柔性显示面板的结构示意图;
图2是本发明柔性显示面板的制作方法的步骤示意图;
图3A~图3H是本发明柔性显示面板的制作方法的工艺流程图。
具体实施方式
下面结合附图对本发明提供的柔性显示面板及其制作方法的具体实施方式做详细说明。
图1是本发明柔性显示面板的结构示意图。请参阅图1,本发明柔性显示面板包括一显示区域A及一非显示区域B。在图1中,所述显示区域A及非显示区域B采用虚线框示意性地标示。本发明柔性显示面板为有机发光二极管显示面板,即OLED柔性显示面板,在其显示区域A具有有机发光二极管。所述显示区域A用于显示图案,所述非显示区域B为显示区域A之外的区域,例如,金属走线区。在所述非显示区域B中,金属走线区域称为扇出区域(Fanout),在金属走线区域之间具有空白区域。
所述柔性显示面板的具体结构如下。
所述显示区域A包括一柔性基底11。所述柔性基底11通过在玻璃基板上涂覆柔性基板薄膜层而形成。所述柔性基板薄膜层的材料可以为聚酰亚胺(PI),优选地,其厚度可以为10~20μm。
在所述柔性基底11上设置有缓冲层12,在所述缓冲层12上设置有有源层13。一第一绝缘层14覆盖所述缓冲层12及有源层13,所述第一绝缘层14延伸至非显示区域B。在显示区域A,在所述第一绝缘层14上设置有第一栅极15,所述第一栅极15对应所述有源层13设置。在非显示区域B,所述第一金属板16设置在延伸至非显示区域B的第一绝缘层14上,且所述第一金属板16位于非显示区域B的空白区域。所述第一栅极15与所述第一金属板16同层设置。优选地,所述缓冲层12的厚度为200~300nm、所述有源层13的厚度为40~50nm,所述第一绝缘层14的厚度为50~200nm,所述第一栅极15及第一金属板16的厚度为150~250nm。
一第二绝缘层17覆盖所述第一栅极15、所述第一金属板16及所述第一绝缘层14。在所述第二绝缘层17上设置有第二栅极18及第二金属板19。所述第二栅极18与所述第一栅极15对应设置,所述第二金属板19与所述第一金属板16对应设置,所述第二栅极18与所述第二金属板19同层设置。优选地,所述第二绝缘层17的厚度为50~200nm,所述第二栅极18及所述第二金属板19的厚度为150~250nm。
所述第二金属板19与所述第一金属板16对应设置,则所述第二金属板19与所述第一金属板16及其之间的第二绝缘层17形成一电容,所述电容具有一定缓冲静电荷释放的能力,而起到减弱静电对器件内部及金属走线膜层的击伤。其中所述第一金属板16及第二金属板19的形状相同,例如均为圆形或方形。
一第三绝缘层20覆盖所述第二栅极18、所述第二金属板19及所述第二绝缘层17。一源极21及漏极22分别穿过所述第一绝缘层14、第二绝缘层17及第三绝缘层20,并分别与所述有源层13连接。优选地,所述第三绝缘层20的厚度为500~700nm、所述源极21及漏极22的厚度为400~600nm。
其中,所述有源层13、第一栅极15、第二栅极18、源极21及漏极22构成薄膜晶体管。
一平坦化层23覆盖所述第三绝缘层20及所述源极21和漏极22,在所述漏极22位置形成一过孔(附图中未标示)。一有机发光二极管的阳极层24穿过所述过孔与所述漏极22连接。一像素定义层25设置在所述阳极层24上。一有机发光层26设置在所述阳极层24上,且被所述像素定义层25包围。一阴极层27设置在所述像素定义层25及所述有机发光层26上。优选地,所述平坦化层23的厚度为1.5~3μm,所述阳极层24的厚度为100~250nm、所述像素定义层25的厚度为1.5~3μm,所述阴极层27的厚度为10nm~200nm。
其中,所述第一栅极15、第二栅极18、第一金属板16及第二金属层19的材料可以为钼;所述源极21及漏极22的材料可为钛和铝。第一绝缘层14、第二绝缘层17及第三绝缘层30为无机材料层,其可以为SiOx和SiNx中的一种或二者的组合,所述有源层13的材料为低温多晶硅(Low Temperature Poly-silicon,LTPS)。平坦化层23、像素定义层25的材料可以为聚酰亚胺。阳极层24的材料可以为氧化铟锡和银。所述阴极层27的材料可以为透光较好的材料,例如较薄的镁或银层等。
本发明还提供一种柔性显示面板的制作方法。图2是本发明柔性显示面板的制作方法的步骤示意图,图3A~图3H是本发明柔性显示面板的制作方法的工艺流程图。
参见图3A及步骤S21,在柔性基板100表面依次形成缓冲层101、有源层103、第一绝缘层102及第一金属层104。其中,所述柔性基板100通过在玻璃基板1001上涂覆柔性基板薄膜层1002形成。所述柔性基板薄膜层111的材料可以为聚酰亚胺(PI),优选地,其厚度可以为10~20μm。优选地,所述缓冲层101的厚度为200~300nm、所述有源层103的厚度为40~50nm,所述第一绝缘层102的厚度为50~200nm,所述第一金属层104的厚度为150~250nm。
参见图3B及步骤S22,图形化所述第一金属层104,形成第一栅极105及第一金属板106。所述第一栅极105位于显示区域A,所述第一金属板106位于非显示区域B的空白区域。在本步骤中,所述第一栅极105与所述第一金属板106采用同一个金属层及同一道制程形成,所述第一栅极105与所述第一金属板106位于同一层。
参见图3C及步骤S23,在所述第一栅极105、第一金属板106及第一绝缘层102表面形成第二绝缘层107及第二金属层108。第二绝缘层107及第二金属层108可采用常规的沉积溅射的方法形成。优选地,所述第二绝缘层107的厚度为50~200nm,所述第二金属层108的厚度为150~250nm。
参见图3D及步骤S24,图形化所述第二金属层108,形成第二栅极109及第二金属板110。所述第二栅极109位于显示区域A,所述第二金属板110位于非显示区域B的空白区域。在本步骤中,所述第二栅极109与所述第二金属板110采用同一个金属层及同一道制程形成,所述第二栅极109与所述第二金属板110位于同一层。
所述第一金属板106与所述第二金属板110相对设置,所述第二金属板110与所述第一金属板106及其之间的第二绝缘层107形成一电容。所述电容具有一定缓冲静电荷释放的能力,而起到减弱静电对器件内部及金属走线膜层的击伤。其中所述第一金属板106及第二金属板110的形状相同,例如均为圆形或方形。
参见图3E及步骤S25,在所述第二栅极109、第二金属板110及第二绝缘层107表面形成第三绝缘层111。其中,形成第三绝缘层111的方法可以采用本领域常规的沉积方法。
参见图3F及步骤S26,形成源极112及漏极113。所述源极112及漏极113分别穿过所述第一绝缘层102、第二绝缘层107及第三绝缘层111,并分别与所述有源层103连接。
参见图3G及步骤S27,在所述第三绝缘层111表面形成平坦化层114、阳极层115、像素定义层116、有机发光层117及阴极层118,所述阳极层115穿过所述平坦化层114与所述漏极113连接。其中,所述平坦化层114、阳极层115、像素定义层116、有机发光层117及阴极层118的制作方法为本领域常规的方法,在此不再赘述。
参见图3H,去除玻璃基板1001,形成柔性显示面板。所述玻璃基板1001可以采用剥离工艺去除。
以上所述仅是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员,在不脱离本发明原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本发明的保护范围。

Claims (8)

1.一种柔性显示面板,其特征在于,包括一显示区域及一非显示区域,在所述显示区域设置有一薄膜晶体管,所述薄膜晶体管具有一第一栅极及第二栅极,所述非显示区域包括金属走线区域及位于所述金属走线区域之间的空白区域,在所述空白区域设置有相对的一第一金属板及一第二金属板,所述第一金属板与所述第一栅极同层,所述第二金属板与所述第二栅极同层,所述第一金属板及所述第二金属板形成一电容。
2.根据权利要求1所述的柔性显示面板,其特征在于,所述第一金属板及所述第二金属板的形状相同。
3.根据权利要求1所述的柔性显示面板,其特征在于,所述第一金属板及所述第二金属板的形状为圆形或方形。
4.根据权利要求1所述的柔性显示面板,其特征在于,所述第一栅极与所述第一金属板的厚度相同,所述第二栅极与所述第二金属板的厚度相同。
5.根据权利要求1所述的柔性显示面板,其特征在于,所述显示区域包括一柔性基底、设置在所述柔性基底上的缓冲层、设置在所述缓冲层上的有源层、覆盖所述有源层及所述缓冲层的第一绝缘层,所述第一栅极设置在所述第一绝缘层上,所述第一绝缘层延伸至所述非显示区域,且所述第一金属板设置在延伸至所述非显示区域的所述第一绝缘层上。
6.根据权利要求5所述的柔性显示面板,其特征在于,所述柔性显示面板还包括一第二绝缘层,所述第二绝缘层覆盖所述第一栅极、所述第一金属板及所述第一绝缘层,在所述显示区域,所述第二栅极设置在所述第二绝缘层上,在所述非显示区域的所述空白区域处,所述第二金属板设置在所述第二绝缘层上。
7.根据权利要求6所述的柔性显示面板,其特征在于,所述柔性显示装置还包括一第三绝缘层,所述第三绝缘层覆盖所述第二栅极、所述第二金属板及所述第二绝缘层。
8.根据权利要求7所述的柔性显示面板,其特征在于,所述柔性显示装置还包括一源极及一漏极,所述源极及所述漏极分别穿过所述第一绝缘层、第二绝缘层及第三绝缘层,并分别与所述有源层连接。
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Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108957883A (zh) * 2018-07-20 2018-12-07 武汉华星光电技术有限公司 一种显示面板及显示设备
CN109004003A (zh) * 2018-07-16 2018-12-14 云谷(固安)科技有限公司 显示屏及显示装置
CN109148381A (zh) * 2018-08-24 2019-01-04 京东方科技集团股份有限公司 阵列基板及其制作方法、显示面板、显示装置
CN109950290A (zh) * 2019-04-03 2019-06-28 维沃移动通信有限公司 Amoled显示屏、显示设备及移动终端
CN110197843A (zh) * 2019-05-31 2019-09-03 武汉天马微电子有限公司 显示面板和显示装置
CN110416253A (zh) * 2018-04-26 2019-11-05 上海和辉光电有限公司 一种柔性显示面板及柔性显示装置
CN110504292A (zh) * 2019-08-28 2019-11-26 昆山国显光电有限公司 阵列基板、显示面板及显示装置
CN110600505A (zh) * 2019-08-20 2019-12-20 武汉华星光电半导体显示技术有限公司 Oled显示装置
CN110707126A (zh) * 2019-09-02 2020-01-17 武汉华星光电半导体显示技术有限公司 阵列基板及其制造方法
WO2020173187A1 (zh) * 2019-02-27 2020-09-03 京东方科技集团股份有限公司 薄膜晶体管及其制造方法、阵列基板和显示装置
CN112713138A (zh) * 2020-12-28 2021-04-27 上海天马有机发光显示技术有限公司 一种柔性基板及显示面板
CN113206124A (zh) * 2020-02-03 2021-08-03 京东方科技集团股份有限公司 显示面板及显示装置
US11195900B2 (en) 2019-09-02 2021-12-07 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Array substrate with protrusion patterns and method of fabricating same
CN114333577A (zh) * 2021-12-17 2022-04-12 深圳市华星光电半导体显示技术有限公司 柔性显示面板和显示装置
WO2023240635A1 (zh) * 2022-06-17 2023-12-21 京东方科技集团股份有限公司 显示基板及显示装置

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10453872B1 (en) * 2018-05-03 2019-10-22 Wuhan China Star Optoelectronics Semiconductor Display Technologiy Co., Ltd. Array substrate and manufacturing method thereof
CN109920801B (zh) * 2019-03-11 2022-02-01 京东方科技集团股份有限公司 阵列基板及其制作方法、和显示装置
KR20210064559A (ko) * 2019-11-26 2021-06-03 엘지디스플레이 주식회사 발광 표시 장치
CN111129003B (zh) * 2019-12-18 2022-07-29 重庆康佳光电技术研究院有限公司 一种电致发光器件的覆晶结构和显示装置
KR20210113513A (ko) 2020-03-06 2021-09-16 삼성디스플레이 주식회사 발광 표시 장치 및 그 제조 방법
CN112103299B (zh) * 2020-09-04 2022-05-03 Tcl华星光电技术有限公司 显示面板的制备方法及显示面板
US11740524B2 (en) 2021-11-12 2023-08-29 Sharp Display Technology Corporation Liquid crystal display device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101025489A (zh) * 2006-02-17 2007-08-29 三星电子株式会社 阵列基板、具有其的显示装置、及其方法
CN101630078A (zh) * 2008-07-17 2010-01-20 胜华科技股份有限公司 液晶显示面板
CN105929615A (zh) * 2016-06-21 2016-09-07 武汉华星光电技术有限公司 一种薄膜晶体管阵列基板及液晶面板
CN107123666A (zh) * 2017-05-27 2017-09-01 上海天马微电子有限公司 显示面板和显示装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102173707B1 (ko) * 2013-05-31 2020-11-04 삼성디스플레이 주식회사 박막 트랜지스터 및 이를 포함하는 유기 발광 표시 장치
KR102360010B1 (ko) * 2015-06-05 2022-02-10 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101025489A (zh) * 2006-02-17 2007-08-29 三星电子株式会社 阵列基板、具有其的显示装置、及其方法
CN101630078A (zh) * 2008-07-17 2010-01-20 胜华科技股份有限公司 液晶显示面板
CN105929615A (zh) * 2016-06-21 2016-09-07 武汉华星光电技术有限公司 一种薄膜晶体管阵列基板及液晶面板
CN107123666A (zh) * 2017-05-27 2017-09-01 上海天马微电子有限公司 显示面板和显示装置

Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110416253A (zh) * 2018-04-26 2019-11-05 上海和辉光电有限公司 一种柔性显示面板及柔性显示装置
CN109004003A (zh) * 2018-07-16 2018-12-14 云谷(固安)科技有限公司 显示屏及显示装置
US11108016B2 (en) 2018-07-16 2021-08-31 Yungu (Gu'an) Technology Co., Ltd. Display screens and display devices
CN109004003B (zh) * 2018-07-16 2021-08-13 云谷(固安)科技有限公司 显示屏及显示装置
WO2020015430A1 (zh) * 2018-07-16 2020-01-23 云谷(固安)科技有限公司 显示屏及显示装置
CN108957883A (zh) * 2018-07-20 2018-12-07 武汉华星光电技术有限公司 一种显示面板及显示设备
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WO2020173187A1 (zh) * 2019-02-27 2020-09-03 京东方科技集团股份有限公司 薄膜晶体管及其制造方法、阵列基板和显示装置
US11342431B2 (en) 2019-02-27 2022-05-24 Hefei Xinsheng Optoelectronics Technology Co., Ltd. Thin film transistor and manufacturing method thereof, array substrate and display device
CN109950290A (zh) * 2019-04-03 2019-06-28 维沃移动通信有限公司 Amoled显示屏、显示设备及移动终端
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CN114333577A (zh) * 2021-12-17 2022-04-12 深圳市华星光电半导体显示技术有限公司 柔性显示面板和显示装置
CN114333577B (zh) * 2021-12-17 2024-03-15 深圳市华星光电半导体显示技术有限公司 柔性显示面板和显示装置
WO2023240635A1 (zh) * 2022-06-17 2023-12-21 京东方科技集团股份有限公司 显示基板及显示装置

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