CN107809053A - The saturable absorber device and method based on TCO for fiber pulse laser - Google Patents
The saturable absorber device and method based on TCO for fiber pulse laser Download PDFInfo
- Publication number
- CN107809053A CN107809053A CN201710979005.7A CN201710979005A CN107809053A CN 107809053 A CN107809053 A CN 107809053A CN 201710979005 A CN201710979005 A CN 201710979005A CN 107809053 A CN107809053 A CN 107809053A
- Authority
- CN
- China
- Prior art keywords
- saturable absorber
- transparent conductive
- conductive oxide
- fiber
- optical fiber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1106—Mode locking
- H01S3/1112—Passive mode locking
- H01S3/1115—Passive mode locking using intracavity saturable absorbers
- H01S3/1118—Semiconductor saturable absorbers, e.g. semiconductor saturable absorber mirrors [SESAMs]; Solid-state saturable absorbers, e.g. carbon nanotube [CNT] based
Abstract
The invention discloses a kind of saturable absorber and method based on TCO for fiber pulse laser.Including the transparent conductive oxide with saturable absorption characteristic, described saturable absorber device is to be integrated in optical fiber by transparent conductive oxide to be formed, and integration mode is that through mode is integrated or evanscent field effect is integrated；Transparent conductive oxide is that the transparent conductive oxide obtained by chemical synthesis is nanocrystalline, the transparent conductive oxide film obtained by pulsed laser deposition method, magnetically controlled sputter method or Atomic layer deposition method, the composite membrane being made up of the nanocrystalline matrix nanocrystalline with wrapping up the transparent conductive oxide of the transparent conductive oxide by chemical synthesis.The present invention has expanded the species of saturable absorber, has that cost is low, is adapted to extensive preparation, small volume, can form the advantages of polytype locked mode and Q-switching device, can be widely applied to the pulse optical fiber of near-infrared and middle infrared band.
Description
Technical field
The present invention relates to nonlinear optical material and device, more particularly to it is a kind of for fiber pulse laser based on
TCO (transparent conductive oxide) saturable absorber device and method, locked mode, tune Q available for optical fiber laser, laser light
Beam shaping etc..
Background technology
Pulse laser is just playing more and more important effect in the fields such as laser manufacturing industry, scientific research.With
The continuous development for adjusting Q and mode-locking technique and gain medium, can be obtained from the laser system of many different wave lengths
Pulse exports.Producing pulse mainly has actively and passively two ways, and actively modulation needs the additional modulator (sound in laser cavity
Optical electrical optical modulator) realize, system cost is both added, also reduces system portable；And passive modulation is without any outside
Device, thus it is increasingly becoming current main flow selection and developing direction.Current most of commercialization pulse laser is all to use
Passive mode realizes that two kinds of passive modulation modes of most common of which are to adjust Q and mode-locking technique, and its key is can in intracavitary addition
Saturated absorbing body, play a part of amplitude automodulation, i.e., when input light intensity is bigger, the absorption of saturated absorbing body is smaller, favorably
Realize that pulse exports in suppressing continuous wave.
Common saturable absorber includes dyestuff, semiconductor saturated absorption mirror (SESAM) and emerging recently at present
CNT, graphene and transient metal sulfide (such as MoS2、WS2Deng) etc. two-dimensional material.Dyestuff saturated absorbing body is due to itself
Recovery time in nanosecond order, can only produce the pulse of nanosecond order, and its stability is also a larger inferior position；SESAM is passed through
The development of many decades is crossed, technology relative maturity, output is stable, but its light injury threshold is low, application band is narrow, recovery time length
(about a few nanoseconds), complicated, preparation cost is very high, and can only be applied in specific linear topology chamber, limits significantly
It further develops.Single-walled carbon nanotube has excellent saturated absorption response near infrared band, but itself is a kind of each
The material of anisotropy, the direction of growth, diameter, length, chirality etc. are difficult to select and controlled during preparation, and single-walled carbon nanotube
The factors such as optical absorption characteristics and carbon pipe diameter, chirality are related, therefore the accurate control to locked mode is brought into problem；And single wall
CNT easily tangles bunchy, brings higher linear impairments.The two-dimensional materials such as graphene are used as saturable absorption in recent years
Body is pursued by researcher, and its basic ideas is that monatomic thick graphene film is dispersed in transparent polymer or directly turned
Optical fiber head section is moved on to as saturated absorbing body.But the characteristic of graphene saturated absorbing body is only dependent on monatomic thick graphene
Special dirac band structure, its individual layer absorptivity only have 2.3%, and nonlinear response is weak, are restricted its application.Mesh
Before, cheap, the efficient preparation of monoatomic layer graphene is still problem urgently to be resolved hurrily at present.Other two-dimensional materials such as transition gold
Belong to sulfide, due to being semiconductor, and its absorption is predominantly located at visible waveband, and response wave band is limited, additionally, due to band gap and layer
Number is relevant, current accurate optionally the control number of plies or a very big problem, therefore also limit it and further send out
Exhibition.It is noted that for two-dimensional material, its low laser damage threshold is also one for ultrafast laser application
The problem of can not avoiding, limit power output.
The content of the invention
In order to solve problem present in background technology, it is used for fiber pulse laser it is an object of the invention to provide a kind of
The saturable absorber device and method based on TCO (Transparent conducting oxide, TCO) of device, device tool
There is the characteristics of simple in construction, cost is low, and have found a kind of brand-new material system with excellent saturated absorption characteristic, be
Develop new saturable absorber and provide bigger space.
The technical scheme is that：
First, a kind of saturable absorber device based on TCO for fiber pulse laser：
Including the transparent conductive oxide with saturable absorption characteristic, described saturable absorber device is by transparent
Conductive oxide is integrated in optical fiber and formed, and described integration mode is that through mode is integrated or evanscent field effect is integrated.
The transparent conductive oxide is as saturable absorber, for producing laser pulse.
Described through mode is integrated into forms sandwich style by transparent conductive oxide between two fiber end faces
Device architecture.
Described evanescent wave Mode integrating is that transparent conductive oxide is deposited on into D-type optical fiber or the surface shape of tapered fiber
Into the device architecture of evanescent wave effect.
The transparent conductive oxide with saturable absorption characteristic, specifically using tin-doped indium oxide (ITO), fluorine doped oxygen
Change tin (FTO), Al-Doped ZnO (AZO), indium-doped zinc oxide (IZO), gallium-doped zinc oxide (GZO), indium gallium zinc oxide (IGZO),
Indium doping cadmium oxide (ICO), CuAlO2, SnO, NiO, Nb doping TiO2、TiO2-x(x=0~1), Cu2-xO (x=0~1), WO3-x
(x=0~1) and MoO3-xAbove-mentioned one or more kinds of combination of (x=0~1).
The present invention is found through experiments that above transparent conductive oxide has saturable absorption characteristic, and can be used in making can
Saturated absorbing body device.
Described transparent conductive oxide is following three kinds of one of which：
The transparent conductive oxide obtained by chemical synthesis is nanocrystalline；
The transparent conductive oxide obtained by pulsed laser deposition method, magnetically controlled sputter method or Atomic layer deposition method
Thing film；
It is nanocrystalline nanocrystalline with the parcel transparent conductive oxide by the transparent conductive oxide by chemical synthesis
The composite membrane that matrix is formed.
Described matrix uses organic polymer or inorganic polymer, and the organic polymer is polyvinyl alcohol or poly- methyl
Methyl acrylate, the inorganic polymer are silica or phosphate gel glass.
Described through mode integration mode is：Transparent conductive oxide is deposited directly on the end face of optical fiber, then will
The saturable absorber device to form sandwich structure is connected with the end face of another optical fiber；Or will be by transparent conductive oxide
It is nanocrystalline that the saturable absorber device that sandwich structure is formed between the end face of two optical fiber is clipped in matrix composition composite membrane.
Described evanescent wave Mode integrating mode is that transparent conductive oxide is deposited directly into D-type optical fiber or tapered fiber
Surface form saturable absorber device.
For the D-type optical fiber, gap slot is provided with the side wall of D-type optical fiber, transparent conductive oxide is deposited in gap slot
Thing.
For the tapered fiber, place's side face deposition transparent conductive oxide is narrowed in the diameter of tapered fiber.
2nd, the preparation method of a kind of saturable absorber device based on TCO for fiber pulse laser：
Transparent conductive oxide with saturable absorption characteristic is integrated with through mode integration mode or evanscent field effect
Mode is integrated on optical fiber.
The transparent conductive oxide with saturable absorption characteristic, specifically using tin-doped indium oxide (ITO), fluorine doped oxygen
Change tin (FTO), Al-Doped ZnO (AZO), indium-doped zinc oxide (IZO), gallium-doped zinc oxide (GZO), indium gallium zinc oxide (IGZO),
Indium doping cadmium oxide (ICO), CuAlO2, SnO, NiO, Nb doping TiO2、TiO2-x(x=0~1), Cu2-xO (x=0~1), WO3-x
(x=0~1) and MoO3-xAbove-mentioned one or more kinds of combination of (x=0~1).
Described through mode integration mode is：Transparent conductive oxide is deposited directly on the end face of optical fiber, then will
The saturable absorber device to form sandwich structure is connected with the end face of another optical fiber；Or will be by transparent conductive oxide
It is nanocrystalline that the saturable absorber device that sandwich structure is formed between the end face of two optical fiber is clipped in matrix composition composite membrane.
Described evanescent wave Mode integrating mode is that transparent conductive oxide is deposited directly into D-type optical fiber or tapered fiber
Surface form saturable absorber device.
Described D-type optical fiber or the side wall of tapered fiber are provided with gap slot, and transparent conductive oxide is deposited in gap slot.
Described matrix uses organic polymer or inorganic polymer, and the organic polymer is polyvinyl alcohol or poly- methyl
Methyl acrylate, the inorganic polymer are silica or phosphate gel glass.
The saturable absorber device is applied to the fields such as pulse optical fiber.
The beneficial effects of the invention are as follows：
(1) transparent conductive oxide used in the present invention can on a large scale, inexpensively using ripe chemical method or
Prepared by the methods of magnetron sputtering, pulsed laser deposition, ald, significantly reduced compared to current commercialized SESAM
Cost.
(2) present invention have found a kind of brand-new material system with excellent saturated absorption characteristic, be applicable near red
Outer and middle infrared band, bigger space is provided for exploitation Wideband saturated absorbing body, especially for middle infrared band
Pulsed laser output provide a very competitive realization means.
In terms of comprehensive, the present invention has expanded the species of saturable absorber, is provided to develop new saturable absorber
Bigger space, its device have that cost is low, is adapted to extensive preparation, small volume, can form polytype locked mode and Q regulator
The advantages of part, it can be widely applied to the lock of the pulse optical fiber of near-infrared and middle infrared band (covering 1.0-4.0 microns)
Mould adjusts Q.
Brief description of the drawings
Fig. 1 is the Z scanning curves of the nanocrystalline saturable absorbers of the ITO based on chemical synthesis corresponding to embodiment 1.
Fig. 2 is the saturable absorber transmitance of the ito thin film based on pulsed laser deposition corresponding to embodiment 1 with exciting
The curve of power level.
Fig. 3 is the structure of laser corresponding to embodiment 1.Wherein saturable absorber is attached to tapered fiber table to be nanocrystalline
Face forms (7).
Fig. 4 is the output pulse sequence of pulse laser corresponding to embodiment 1.
Fig. 5 is the output spectrum of pulse laser corresponding to embodiment 1.
Fig. 6 is the structure of the saturable absorber device through Mode integrating corresponding to embodiment 2.
Fig. 7 is that the structure of the integrated saturable absorber device of the D-type optical fiber of evanescent wave pattern corresponding to embodiment 13 is shown
It is intended to.
Embodiment
The invention will be further described with reference to the accompanying drawings and examples, but the protection model of the present invention should not be limited with this
Enclose.
Saturable absorber device of the invention based on transparent conductive oxide, including as the transparent of saturable absorber
Conductive oxide and its integration mode with optical fiber, the transparent conductive oxide of saturable absorber be ITO, FTO, AZO, IZO,
GZO or IGZO, integration mode include through mode and evanescent wave Mode integrating.
The specific embodiment of the present invention is as follows：
Embodiment 1
This example demonstrates that how to use the ITO of chemical synthesis is nanocrystalline to be used as saturable absorber, evanescent wave mould is utilized
Formula is integrated in the fiber pulse laser that 1.5 micron wavebands are prepared in fiber laser cavity.
(1) take the nanocrystalline toluene solutions of ITO of 30 microlitres of chemical syntheses to drop in and ito thin film is dried on quartz plate, utilize
Femtosecond laser (50fs, 1300nm, 1kHz), its saturated absorption characteristic is studied by perforate Z scanning techniques, its result such as Fig. 1 can
It was observed that obvious saturated absorption characteristic.By studying variation relation of its transmitance with exciting power, as shown in Fig. 2 again
Confirm that ito thin film has excellent saturable absorption characteristic.
(2) the nanocrystalline toluene solutions of ITO of 30 microlitres of chemical syntheses are taken to drop in the surface of tapered fiber, ITO receives after drying
Meter Jing is overlying on tapered fiber surface, in this, as saturable absorber device.
(3) the saturable absorber device 7 that (2) obtain is integrated in loop laser chamber, forms pulse optical fiber.
As shown in figure 3, including the first Polarization Controller 1, Er doped fibers 2, wavelength division multiplexer 3, the second Polarization Controller
4th, isolator 8, coupler 6 and saturable absorber device 7, input of 3 one inputs of wavelength division multiplexer as laser,
Another input of wavelength division multiplexer 3 is connected to an input of coupler 6 after the second Polarization Controller 4, isolator 8 successively
End, another input of coupler 6 are connected with the one end of saturable absorber device 7, and the output end of wavelength division multiplexer 3 is successively through Er
Doped fiber 2, the first Polarization Controller 1 are connected to one end of saturable absorber device 7, and the output end of coupler 6 is as sharp
The output end of light device.
(4) such as Fig. 4 is gained laser pulse sequence, and Fig. 5 is gained pulse laser spectrum.It can be seen that the present invention is based on
The saturable absorption bulk properties of saturable absorber device nanocrystalline ITO, the present embodiment successfully being received based on what solution synthesized
Meter Jing realizes the Mode-locked laser output of 1.5 micron wavebands, and molecular beam epitaxial growth etc. is used relative to commercialization SASAM
Expensive, harsh method significantly reduces production cost.
Embodiment 2
This example demonstrates that it is nanocrystalline how to prepare the ITO being carried in polymer poly methyl methacrylate (PMMA)
Saturable absorber, utilize the fiber pulse laser for preparing 1.5 micron wavebands in fiber laser cavity through Mode integrating.
(1) prepared by PMMA toluene solutions：0.3g PMMA powder is dispersed in 5mL toluene, 2h is stirred, dissolves powder.
(2) 5mL PMMA toluene solutions and 5mL concentration are that 50mg/ml ITO toluene solutions are well mixed, and pour into surface
In smooth surface plate, and horizontal be put in drying box dries two days ITO/PMMA laminated films for obtaining smooth drying.
(3) part in uniform thickness in laminated film is chosen to use as saturable absorber device.Then by THIN COMPOSITE
Film be used as saturable absorber device between being embedded in two optical fiber, as shown in fig. 6, such as embodiment 1 is by the saturable absorber device
Part is integrated in optical fibre ring laser cavity and prepares pulse optical fiber, and ITO/PMMA laminated films 8 are connected into two optical fiber
Between first 10 end face of optical fiber ferrule of joint 9.
The present embodiment has obtained the mode-locked laser pulse output of 1.5 micron wavebands, and thus also explanation realizes saturable suction
The preparation of acceptor device.
Embodiment 3
This example demonstrates that how to be prepared by pulsed laser deposition is deposited on tapered fiber surface as saturable using ITO
Absorber, the fiber pulse laser of 1.5 micron wavebands is prepared in fiber laser cavity using evanescent wave Mode integrating.
(1) surface that ito thin film is deposited directly to tapered fiber by the use of pulsed laser deposition method is inhaled as saturable
Acceptor.
(2) the above-mentioned saturable absorber prepared is integrated in optical fibre ring laser cavity by the method such as embodiment 1,
The pulsed laser output of 1.5 micron wavebands is similarly obtained, thus also explanation realizes the preparation of saturable absorber device.
Embodiment 4
This example demonstrates that it is nanocrystalline how to prepare the ITO being carried in polymer poly methyl methacrylate (PMMA)
Saturable absorber, 2.0 micron optical fiber pulse lasers are prepared in fiber laser cavity using through Mode integrating.
(1) ITO/PMMA laminated films are prepared according to embodiment 2, then using laminated film between two optical fiber as
Saturable absorber device (gain fibre here is the optical fiber of Tm doping).
(2) above-mentioned saturable absorber is integrated in optical fibre ring laser cavity by the method such as embodiment 1, is similarly obtained
The adjustable Q laser pulse output of 2.0 micron wavebands, thus illustrate that the transparent conductive oxide is equally applicable to middle infrared band can
Saturated absorbing body.
Embodiment 5
This example demonstrates that how to prepare using the ITO of chemical synthesis it is nanocrystalline be directly sandwiched between two fiber end faces as
Saturable absorber, utilize the fiber pulse laser for preparing 3.0 micron wavebands in fiber laser cavity through Mode integrating.
(1) the ITO nanocrystal solutions of chemical synthesis are dropped in into the end face of optical fiber head, be then connected with another optical fiber, such as
Embodiment 2 is similarly formed sandwich structure, and here nanocrystalline is used as saturable absorber between being directly sandwiched in two optical fiber.
(2) above-mentioned saturable absorber is integrated in optical fibre ring laser cavity (gain here by the method such as embodiment 1
Optical fiber is that Er adulterates ZBLAN fluoride fibers), the pulsed laser output of 3.0 micron wavebands is similarly obtained, thus furtherly
The bright transparent conductive oxide is equally applicable to the saturable absorber of middle infrared band.
Embodiment 6
This example demonstrates that it is nanocrystalline how to prepare the IZO being carried in polymer poly methyl methacrylate (PMMA)
Saturable absorber, utilize the fiber pulse laser for preparing 3.0 micron wavebands in fiber laser cavity through Mode integrating.
(1) prepared by PMMA toluene solutions：0.3g PMMA powder is dispersed in 5mL toluene, 2h is stirred, dissolves powder.
(2) 5mL PMMA toluene solutions and 5mL concentration are that 50mg/ml IZO toluene solutions are well mixed, and pour into surface
In smooth surface plate, and horizontal be put in drying box dries two days PMMA films for obtaining smooth drying.
(3) part wherein in uniform thickness is chosen to use as saturable absorber device.Then laminated film is embedded in
Saturable absorber device is used as between two optical fiber, as embodiment 1 is integrated in optical fibre ring laser cavity (gain light here
Fibre adulterates ZBLAN fluoride fibers for Er) pulse optical fiber is prepared, it has been similarly obtained the mode-locked laser of 2.0 micron wavebands
Pulse exports, and thus also explanation realizes the preparation of saturable absorber device.
Embodiment 7
This example demonstrates that how to use the IZO of chemical synthesis is nanocrystalline to be used as saturable absorber, evanescent wave mould is utilized
Formula is integrated in the fiber pulse laser that 3.0 micron wavebands are prepared in fiber laser cavity.
(1) the nanocrystalline toluene solutions of IZO of 30 microlitres of chemical syntheses are taken to drop in the surface of D-type optical fiber, IZO nanometers after drying
Crystalline substance is overlying on D-type optical fiber surface, in this, as saturable absorber device.
(2) pulse fiber is formed as the saturable absorber device that (1) obtains is integrated in loop laser chamber by embodiment 1
Laser (gain fibre here is that Er adulterates ZBLAN optical fiber).
(3) as embodiment 1, the present embodiment are successfully realized the Mode-locked laser output of 3.0 micron wavebands, thus illustrated
The IZO of solution synthesis is nanocrystalline to can equally be well applied to infrared saturable absorber in preparing, and has relative to commercialized SESAM
Obvious low-cost advantage.
Embodiment 8
This example demonstrates that how to be prepared by magnetron sputtering is deposited on tapered fiber surface as saturable absorption using IZO
Body, the fiber pulse laser of 2.0 micron wavebands is prepared in fiber laser cavity using evanescent wave Mode integrating.
(1) surface that IZO films are deposited directly to tapered fiber by the use of pulsed laser deposition method is inhaled as saturable
Acceptor (gain fibre here is Tm doped fibers).
(2) above-mentioned saturable absorber is integrated in optical fibre ring laser cavity by the method such as embodiment 1, is similarly obtained
The pulsed laser output of 2.0 micron wavebands.
Embodiment 9
Inhaled this example demonstrates that how to be prepared by pulsed laser deposition and IGZO is deposited on into fiber end face as saturable
Acceptor, utilize the fiber pulse laser for preparing 3.0 micron wavebands in fiber laser cavity through Mode integrating.
(1) IGZO films are deposited directly to the end face of an optical fiber using pulsed laser deposition method, then with it is another
Root optical fiber connects, and IGZO films is clipped in the device that sandwich structure is formed between two optical fiber, such as the device junction in embodiment 2
Structure.
(2) above-mentioned saturable absorber is integrated in optical fibre ring laser cavity (gain here by the method such as embodiment 2
Optical fiber is that Er adulterates ZBLAN optical fiber), the pulsed laser output of 3.0 micron wavebands has been similarly obtained, has thus illustrated that IGZO films are same
Sample is also applied for infrared saturable absorber in preparing, and has obvious low-cost advantage relative to commercialized SESAM.
Embodiment 10
This example demonstrates that how to be prepared by Atomic layer deposition method is deposited on tapered fiber surface as can satisfy using FTO
And absorber, the fiber pulse lasers of 2.0 micron wavebands is prepared in fiber laser cavity using evanescent wave Mode integrating.
(1) surface that FTO films are deposited directly to tapered fiber by the use of pulsed laser deposition method is inhaled as saturable
Acceptor (gain fibre here is Tm doped fibers).
(2) above-mentioned saturable absorber is integrated in optical fibre ring laser cavity by the method such as embodiment 1, is similarly obtained
The pulsed laser output of 2.0 micron wavebands, thus also illustrate that FTO films can equally be well applied to infrared saturable absorption in preparing
Body, there is obvious low-cost advantage relative to commercialized SESAM.
Embodiment 11
This example demonstrates that how to be prepared by pulsed laser deposition is deposited on fiber end face as saturable absorption using GZO
Body, utilize the fiber pulse laser for preparing 3.0 micron wavebands in fiber laser cavity through Mode integrating.
(1) GZO films are deposited directly to the end face of an optical fiber using pulsed laser deposition method, then with another
Optical fiber connects, and GZO films is clipped in the device that sandwich structure is formed between two optical fiber, such as the device architecture in embodiment 2.
(2) above-mentioned saturable absorber is integrated in optical fibre ring laser cavity (gain here by the method such as embodiment 2
Optical fiber is that Er adulterates ZBLAN optical fiber), the pulsed laser output of 3.0 micron wavebands has been similarly obtained, has thus illustrated that GZO films are same
Sample is also applied for infrared saturable absorber in preparing, and has obvious low-cost advantage relative to commercialized SESAM.
Embodiment 12
This example demonstrates that how to be prepared by pulsed laser deposition is deposited on fiber end face as saturable absorption using AZO
Body, utilize the fiber pulse laser for preparing 3.0 micron wavebands in fiber laser cavity through Mode integrating.
(1) AZO films are deposited directly to the end face of an optical fiber using pulsed laser deposition method, then with another
Optical fiber connects, and AZO films is clipped in the device that sandwich structure is formed between two optical fiber, such as the device architecture in embodiment 2.
(2) above-mentioned saturable absorber is integrated in optical fibre ring laser cavity (gain here by the method such as embodiment 2
Optical fiber is that Er adulterates ZBLAN optical fiber), the pulsed laser output of 3.0 micron wavebands has been similarly obtained, has thus illustrated that AZO films are same
Sample is also applied for infrared saturable absorber in preparing, and has obvious low-cost advantage relative to commercialized SESAM.
Embodiment 13
This example demonstrates that how to use the IZO of chemical synthesis is nanocrystalline to be used as saturable absorber, evanescent wave mould is utilized
Formula is integrated in the fiber pulse laser that 3.0 micron wavebands are prepared in D-type optical fiber laser cavity.
(1) the nanocrystalline toluene solutions of IZO of 30 microlitres of chemical syntheses are taken to drop in the surface of D-type optical fiber, IZO nanometers after drying
Crystalline substance is overlying on D-type optical fiber surface, as shown in fig. 7, in this, as saturable absorber device.Specifically in the outer surface of D-type optical fiber 11
Gap slot is opened up, gap slot arranges that IZO is nanocrystalline in the plane of groove bottom, form electrically conducting transparent perpendicular to the axial direction of optical fiber
Sull 12, so that transparent conductive oxide film 12 and optical fiber form evanescent wave Mode Coupling.
(2) pulse fiber is formed as the saturable absorber device that (1) obtains is integrated in loop laser chamber by embodiment 1
Laser (gain fibre here is that Er adulterates ZBLAN optical fiber).
(3) as embodiment 1, the present embodiment are successfully realized the Mode-locked laser output of 3.0 micron wavebands, thus illustrated
The IZO of solution synthesis is nanocrystalline to can equally be well applied to infrared saturable absorber in preparing, and has relative to commercialized SESAM
Obvious low-cost advantage.
Embodiment 14
This example demonstrates that how by the use of molecular beam epitaxial growth method using IZO films be used as saturable absorber, profit
The fiber pulse laser of 3.0 micron wavebands is prepared in D-type optical fiber laser cavity with evanescent wave Mode integrating.
(1) using molecular beam epitaxial growth method by IZO thin film depositions on the surface of D-type optical fiber, as shown in fig. 7, with
This is as saturable absorber device.Gap slot, axle of the gap slot perpendicular to optical fiber are specifically opened up in the outer surface of D-type optical fiber 11
To, the arrangement IZO films in the plane of groove bottom, formation transparent conductive oxide film 12, so that transparent conductive oxide
Thing film 12 and optical fiber form evanescent wave Mode Coupling.
(2) pulse fiber is formed as the saturable absorber device that (1) obtains is integrated in loop laser chamber by embodiment 1
Laser (gain fibre here is that Er adulterates ZBLAN optical fiber).
(3) as embodiment 1, the present embodiment are successfully realized the Mode-locked laser output of 3.0 micron wavebands, thus illustrated
IZO films can equally be well applied to infrared saturable absorber in preparing, and have obvious low cost relative to commercialized SESAM
Advantage.
Embodiment 15
This example demonstrates that the nanocrystalline saturable absorbers of the IZO being carried in inorganic silicon dioxide how are prepared, profit
With the fiber pulse laser for preparing 2.0 micron wavebands in fiber laser cavity through Mode integrating.
(1) 1.2mL tetraethyl orthosilicates, 0.6mL alcohol, 0.4mL (3- mercaptopropyis) trimethoxy silane, 0.4mL concentration
For the 3mg/mL nanocrystalline aqueous solution of IZO, stir 1 hour, be well mixed, seal rim of a cup with preservative film, place 3 months, obtain
Adulterate the nanocrystalline gel glass of IZO.
(2) the glass polishing flakiness for obtaining (1), then such as embodiment 2 forms sandwich between being clipped in two optical fiber
The saturable absorber device of structure.
(3) also truthfully apply example 1 and be integrated in optical fibre ring laser cavity (gain fibre here is Tm doped fibers) system
Standby pulse optical fiber, the adjustable Q laser pulse output of 2.0 micron wavebands is similarly obtained, has thus also illustrated that IZO is nanocrystalline multiple
Film is closed to be equally applicable to prepare saturable absorber.
Embodiment 16
This example demonstrates that how to use the WO of chemical synthesis2.72It is nanocrystalline to be used as saturable absorber, utilize evanscent field
Mode integrating prepares the fiber pulse laser of 1.0 micron wavebands in fiber laser cavity.
(1) WO of 30 microlitres of chemical syntheses is taken2.72Nanocrystalline toluene solution drops in the surface of tapered fiber, WO after drying2.72
It is nanocrystalline to be overlying on tapered fiber surface, in this, as saturable absorber device.
(2) pulse fiber is formed as the saturable absorber device that (1) obtains is integrated in loop laser chamber by embodiment 1
Laser (gain fibre here is Yb doped fibers).
(3) as embodiment 1, the present embodiment are successfully realized the Mode-locked laser output of 1.0 micron wavebands, thus also said
The bright preparation for realizing saturable absorber device.
Embodiment 17
This example demonstrates that how to use the MoO of chemical synthesis2.72It is nanocrystalline to be used as saturable absorber, utilize evanscent field
Mode integrating prepares the fiber pulse laser of 1.0 micron wavebands in fiber laser cavity.
(1) MoO of 30 microlitres of chemical syntheses is taken2.72Nanocrystalline toluene solution drops in the surface of tapered fiber, after drying
MoO2.72It is nanocrystalline to be overlying on tapered fiber surface, in this, as saturable absorber device.
(2) pulse fiber is formed as the saturable absorber device that (1) obtains is integrated in loop laser chamber by embodiment 1
Laser (gain fibre here is Yb doped fibers).
(3) as embodiment 1, the present embodiment are successfully realized the Mode-locked laser output of 1.0 micron wavebands, thus also said
The bright preparation for realizing saturable absorber device.
Embodiment 18
This example demonstrates that how to use the ICO of chemical synthesis is nanocrystalline to be used as saturable absorber, evanscent field mould is utilized
Formula is integrated in the fiber pulse laser that 4.0 micron wavebands are prepared in fiber laser cavity.
(1) the nanocrystalline toluene solutions of ICO of 30 microlitres of chemical syntheses are taken to drop in the surface of D-type optical fiber, ICO nanometers after drying
Crystalline substance is overlying on D-type optical fiber surface, in this, as saturable absorber device.
(2) pulse fiber is formed as the saturable absorber device that (2) obtain is integrated in loop laser chamber by embodiment 1
Laser (gain fibre here is that Ho adulterates ZBLAN optical fiber).
(3) as embodiment 1, the present embodiment are successfully realized the Mode-locked laser output of 4.0 micron wavebands, thus illustrated
ICO films can equally be well applied to infrared saturable absorber in preparing.
Embodiment 19
This example demonstrates that how to use the NiO of chemical synthesis is nanocrystalline to be used as saturable absorber, evanscent field mould is utilized
Formula is integrated in the fiber pulse laser that 3.0 micron wavebands are prepared in fiber laser cavity.
(1) the nanocrystalline toluene solutions of NiO of 30 microlitres of chemical syntheses are taken to drop in the surface of D-type optical fiber, NiO nanometers after drying
Crystalline substance is overlying on D-type optical fiber surface, in this, as saturable absorber device.
(2) pulse fiber is formed as the saturable absorber device that (2) obtain is integrated in loop laser chamber by embodiment 1
Laser (gain fibre here is that Er adulterates ZBLAN optical fiber).
(3) as embodiment 1, the present embodiment are successfully realized the Mode-locked laser output of 3.0 micron wavebands, illustrate NiO
The nanocrystalline saturable absorber for being equally applicable to middle infrared band, there is obvious low cost relative to commercialized SESAM
Advantage.
Embodiment 20
This example demonstrates that how to use the Nb doping TiO of chemical synthesis2It is nanocrystalline to be used as saturable absorber, using suddenly
The field mode that dies is integrated in the fiber pulse laser that 3.0 micron wavebands are prepared in fiber laser cavity.
(1) the Nb doping TiO of 30 microlitres of chemical syntheses is taken2Nanocrystalline toluene solution drops in the surface of D-type optical fiber, after drying
Nb adulterates TiO2It is nanocrystalline to be overlying on D-type optical fiber surface, in this, as saturable absorber device.
(2) pulse fiber is formed as the saturable absorber device that (1) obtains is integrated in loop laser chamber by embodiment 1
Laser (gain fibre here is that Er adulterates ZBLAN optical fiber).
(3) as embodiment 1, the present embodiment are successfully realized the Mode-locked laser output of 3.0 micron wavebands, thus also said
Bright Nb adulterates TiO2The nanocrystalline saturable absorber for being equally applicable to middle infrared band, has relative to commercialized SESAM
Obvious low-cost advantage.
Embodiment 21
This example demonstrates that how to use the SnO of chemical synthesis is nanocrystalline to be used as saturable absorber, evanscent field mould is utilized
Formula is integrated in the fiber pulse laser that 3.0 micron wavebands are prepared in fiber laser cavity.
(1) the nanocrystalline toluene solutions of SnO of 30 microlitres of chemical syntheses are taken to drop in the surface of D-type optical fiber, SnO nanometers after drying
Crystalline substance is overlying on D-type optical fiber surface, in this, as saturable absorber device.
(2) pulse fiber is formed as the saturable absorber device that (2) obtain is integrated in loop laser chamber by embodiment 1
Laser (gain fibre here is that Er adulterates ZBLAN optical fiber).
(3) as embodiment 1, the present embodiment are successfully realized the Mode-locked laser output of 3.0 micron wavebands, thus also said
The nanocrystalline saturable absorbers for being equally applicable to middle infrared band of bright SnO, have relative to commercialized SESAM obvious low
Cost advantage.
Embodiment 22
This example demonstrates that how using chemical synthesis IZO is nanocrystalline and MoO2.72Nanocrystalline mixture is as broadband
Saturable absorber, for the locked mode or tune Q of the optical fiber laser for realizing different-waveband simultaneously.
(1) take the IZO of 30 microlitres of chemical syntheses nanocrystalline and MoO2.72Nanocrystalline toluene mixed solution drops in D-type optical fiber
Surface, IZO and MoO after drying2.7It is nanocrystalline to be overlying on D-type optical fiber surface, in this, as saturable absorber device.Such as embodiment 1
Obtained saturable absorber device is integrated in loop laser chamber and forms pulse optical fiber (gain fibre here is
Er doping ZBLAN optical fiber).
(2) such as embodiment 1, it is successfully realized the adjusting Q pulse laser output of 3.0 micron wavebands.
(3) similarly, take the IZO of 30 microlitres of chemical syntheses nanocrystalline and MoO2.72Nanocrystalline toluene mixed solution drops in D
The surface of type optical fiber, IZO and MoO after drying2.7It is nanocrystalline to be overlying on D-type optical fiber surface, in this, as saturable absorber device.
Pulse optical fiber is formed as the saturable absorber device that (2) obtain is integrated in loop laser chamber by embodiment 1 (here
Gain fibre be Yb doped fibers).
(4) as embodiment 1, the present embodiment are successfully realized the Mode-locked laser output of 1.0 micron wavebands.
Thus illustrate solution synthesis IZO is nanocrystalline and MoO2.72Nanocrystalline mixture, which can be used conveniently to prepare broadband, to satisfy
And absorber, there is obvious low-cost advantage and wavelength wavelength operating range relative to commercialized SESAM.
Above-mentioned specific embodiment is used for illustrating the present invention, rather than limits the invention, in the essence of the present invention
In god and scope of the claims, to any modifications and changes of the invention made, protection scope of the present invention is both fallen within.
Claims (10)
1. a kind of saturable absorber device based on TCO for fiber pulse laser, it is characterized in that：Including with can satisfy
With the transparent conductive oxide of absorption characteristic, described saturable absorber device is to be integrated in optical fiber by transparent conductive oxide
Formed, described integration mode is that through mode is integrated or evanscent field effect is integrated.
2. a kind of saturable absorber device based on TCO for fiber pulse laser according to claim 1, its
It is characterized in：The transparent conductive oxide with saturable absorption characteristic, the oxide specifically used for tin-doped indium oxide, mix
Fluorine tin oxide, Al-Doped ZnO, indium-doped zinc oxide, gallium-doped zinc oxide, indium gallium zinc oxide, indium doping cadmium oxide, CuAlO2、
SnO, NiO, Nb adulterate TiO2、TiO2-x(x=0~1), Cu2-xO (x=0~1), WO3-x(x=0~1) and MoO3-x(x=0~
1) above-mentioned one or more kinds of combination.
3. a kind of saturable absorber device based on TCO for fiber pulse laser according to claim 1, its
It is characterized in：Described transparent conductive oxide is following three kinds of one of which：
The transparent conductive oxide obtained by chemical synthesis is nanocrystalline；
The transparent conductive oxide obtained by pulsed laser deposition method, magnetically controlled sputter method or Atomic layer deposition method
Film；
By the nanocrystalline matrix nanocrystalline with wrapping up the transparent conductive oxide of the transparent conductive oxide by chemical synthesis
The composite membrane of composition.
4. a kind of saturable absorber device based on TCO for fiber pulse laser according to claim 3, its
It is characterized in：Described matrix uses organic polymer or inorganic polymer, and the organic polymer is polyvinyl alcohol or poly- methyl
Methyl acrylate, the inorganic polymer are silica or phosphate gel glass.
5. a kind of saturable absorber device based on TCO for fiber pulse laser according to claim 1, its
It is characterized in：Described through mode integration mode is：Transparent conductive oxide is deposited directly on the end face of optical fiber, then will be with
The end face of another optical fiber connects to form saturable absorber device；Or will and matrix structure nanocrystalline by transparent conductive oxide
Saturable absorber device is formed between being clipped in the end face of two optical fiber into composite membrane.
6. a kind of saturable absorber device based on TCO for fiber pulse laser according to claim 1, its
It is characterized in：Described evanescent wave Mode integrating mode is that transparent conductive oxide is deposited directly into D-type optical fiber or tapered fiber
Surface form saturable absorber device.
7. a kind of preparation method of saturable absorber device based on TCO for fiber pulse laser, it is characterized in that：Will
Transparent conductive oxide with saturable absorption characteristic is integrated in through mode integration mode or evanscent field effect integration mode
On optical fiber.
8. a kind of saturable absorber device based on TCO for fiber pulse laser according to claim 7
Preparation method, it is characterized in that：The transparent conductive oxide with saturable absorption characteristic, the oxide specifically used is mixes
Tin indium oxide, fluorine doped tin oxide, Al-Doped ZnO, indium-doped zinc oxide, gallium-doped zinc oxide, indium gallium zinc oxide, indium doping oxidation
Cadmium, CuAlO2, SnO, NiO, Nb doping TiO2、TiO2-x(x=0~1), Cu2-xO (x=0~1), WO3-x(x=0~1) and
MoO3-xAbove-mentioned one or more kinds of combination of (x=0~1).
9. a kind of saturable absorber device based on TCO for fiber pulse laser according to claim 7
Preparation method, it is characterized in that：Described through mode integration mode is：Transparent conductive oxide is deposited directly to the end face of optical fiber
On, then the end face with another optical fiber is connected to form saturable absorber device；Or it will be received by transparent conductive oxide
Meter Jing Yu matrixes form between composite membrane is clipped in the end face of two optical fiber and form saturable absorber device.
10. a kind of saturable absorber device based on TCO for fiber pulse laser according to claim 7
Preparation method, it is characterized in that：Described evanescent wave Mode integrating mode is that transparent conductive oxide is deposited directly into D-type optical fiber
Or the surface of tapered fiber forms saturable absorber device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710979005.7A CN107809053A (en) | 2017-10-19 | 2017-10-19 | The saturable absorber device and method based on TCO for fiber pulse laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710979005.7A CN107809053A (en) | 2017-10-19 | 2017-10-19 | The saturable absorber device and method based on TCO for fiber pulse laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107809053A true CN107809053A (en) | 2018-03-16 |
Family
ID=61592138
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710979005.7A Pending CN107809053A (en) | 2017-10-19 | 2017-10-19 | The saturable absorber device and method based on TCO for fiber pulse laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107809053A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109361142A (en) * | 2018-09-06 | 2019-02-19 | 浙江大学 | It is a kind of based on the saturable absorber device of TiN nano material and application |
| CN110350389A (en) * | 2019-07-10 | 2019-10-18 | 浙江大学 | A kind of saturable absorber and preparation method thereof based on planar optical waveguide |
| WO2020062214A1 (en) * | 2018-09-30 | 2020-04-02 | 深圳大学 | Waveguide integrated optical modulator and preparation method therefor |
| CN115434012A (en) * | 2021-06-04 | 2022-12-06 | 暨南大学 | Two-dimensional oxide crystal and preparation method and application thereof |
| CN117559211A (en) * | 2024-01-09 | 2024-02-13 | 中国人民解放军92941部队 | Saturable absorber, preparation method thereof and annular cavity fiber laser |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105470791A (en) * | 2015-12-29 | 2016-04-06 | 中国科学院物理研究所 | Space structure optical fiber laser based on two-dimensional nanomaterial mode locking |
| CN107104351A (en) * | 2017-05-23 | 2017-08-29 | 西北大学 | A kind of black phosphorus saturable absorber and the laser based on black phosphorus saturable absorber |
-
2017
- 2017-10-19 CN CN201710979005.7A patent/CN107809053A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105470791A (en) * | 2015-12-29 | 2016-04-06 | 中国科学院物理研究所 | Space structure optical fiber laser based on two-dimensional nanomaterial mode locking |
| CN107104351A (en) * | 2017-05-23 | 2017-08-29 | 西北大学 | A kind of black phosphorus saturable absorber and the laser based on black phosphorus saturable absorber |
Non-Patent Citations (3)
| Title |
|---|
| AHMAD H, REDUAN S A, ALI Z A, ET AL.: ""C-band Q-switched fiber laser using titanium dioxide (TiO2) as saturable absorber"", 《IEEE PHOTONICS JOURNAL》 * |
| YAO, JIANKE, ET AL.: ""Electrical and photosensitive characteristics of a-IGZO TFTs related to oxygen vacancy"", 《IEEE TRANSACTIONS ON ELECTRON DEVICES 》 * |
| 郭强兵等: ""局域表面等离子体纳米结构的超快非线性光学及其应用研究进展"", 《中国激光》 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109361142A (en) * | 2018-09-06 | 2019-02-19 | 浙江大学 | It is a kind of based on the saturable absorber device of TiN nano material and application |
| WO2020062214A1 (en) * | 2018-09-30 | 2020-04-02 | 深圳大学 | Waveguide integrated optical modulator and preparation method therefor |
| US11239627B2 (en) | 2018-09-30 | 2022-02-01 | Shenzhen University | Waveguide integrated optical modulator, pulsed optical frequency comb and mode-locked fiber laser |
| CN110350389A (en) * | 2019-07-10 | 2019-10-18 | 浙江大学 | A kind of saturable absorber and preparation method thereof based on planar optical waveguide |
| CN115434012A (en) * | 2021-06-04 | 2022-12-06 | 暨南大学 | Two-dimensional oxide crystal and preparation method and application thereof |
| CN115434012B (en) * | 2021-06-04 | 2023-12-01 | 暨南大学 | Two-dimensional oxide crystal and preparation method and application thereof |
| CN117559211A (en) * | 2024-01-09 | 2024-02-13 | 中国人民解放军92941部队 | Saturable absorber, preparation method thereof and annular cavity fiber laser |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107809053A (en) | The saturable absorber device and method based on TCO for fiber pulse laser | |
| Xie et al. | Revealing of the ultrafast third-order nonlinear optical response and enabled photonic application in two-dimensional tin sulfide | |
| Guo et al. | 2D layered materials: synthesis, nonlinear optical properties, and device applications | |
| Gonçalves et al. | Plasmon-exciton polaritons in two-dimensional semiconductor/metal interfaces | |
| Yang et al. | Design of the alkali-metal-doped WO3 as a near-infrared shielding material for smart window | |
| Pang et al. | GaSb film is a saturable absorber for dissipative soliton generation in a fiber laser | |
| Shu et al. | Two-dimensional black arsenic phosphorus for ultrafast photonics in near-and mid-infrared regimes | |
| Pang et al. | Ultrafast Photonics of Ternary Re x Nb (1–x) S2 in Fiber Lasers | |
| Loukil et al. | Effects of potassium incorporation on the structural, optical, vibrational and electrical properties of NiO sprayed thin films for p-type optical windows | |
| Yang et al. | Ti3C2T x MXene quantum dots with enhanced stability for ultrafast photonics | |
| CN105896258A (en) | Two-dimensional semiconductor saturable absorber mirror and preparation method thereof, and pulse fiber laser | |
| Li et al. | Switching the nonlinear optical absorption of titanium carbide MXene by modulation of the surface terminations | |
| Taeño et al. | An approach to emerging optical and optoelectronic applications based on NiO micro-and nanostructures | |
| Liu et al. | Molybdenum carbide buried in D-shaped fibers as a novel saturable absorber device for ultrafast photonics applications | |
| Ma et al. | Ternary chalcogenide Ta2NiS5 nanosheets for broadband pulse generation in ultrafast fiber lasers | |
| Du et al. | Broadband nonlinear optical response of single-crystalline bismuth thin film | |
| Wang et al. | Molybdenum Disulfide Film Saturable Absorber Based on Sol–Gel Glass and Spin-Coating Used in High-Power Q-Switched Nd: YAG Laser | |
| An et al. | Co-MOFs as emerging pulse modulators for femtosecond ultrafast fiber laser | |
| Li et al. | β-In2S3 nanoplates for ultrafast photonics | |
| CN103293821B (en) | Fa-Po cavity device for non-linear optical being integrated with ultra-thin carbon-coating and preparation method thereof | |
| CN105467512A (en) | Bi/Al co-doped silica fiber and preparation method thereof | |
| Muhammad et al. | Recent advancements review in zinc oxide and titanium dioxide saturable absorber for ultrafast pulsed fiber laser | |
| Zhou et al. | Non-equilibrium spark plasma reactive doping enables highly adjustable metal-to-insulator transitions and improved mechanical stability for VO2 | |
| Guo et al. | Broadband nonlinear response and ultrafast photonics applications in few-layer MBene | |
| CN110391583B (en) | Saturable absorber based on non-stoichiometric transition metal oxide film and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180316 |
|
| RJ01 | Rejection of invention patent application after publication |