CN107808862A - A kind of Si-Al wire bonding technology for highly reliable platform product - Google Patents
A kind of Si-Al wire bonding technology for highly reliable platform product Download PDFInfo
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- CN107808862A CN107808862A CN201710934734.0A CN201710934734A CN107808862A CN 107808862 A CN107808862 A CN 107808862A CN 201710934734 A CN201710934734 A CN 201710934734A CN 107808862 A CN107808862 A CN 107808862A
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- wire
- highly reliable
- platform product
- wire bonding
- reliable platform
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Wire Bonding (AREA)
Abstract
The invention discloses a kind of Si-Al wire bonding technology for highly reliable platform product, belong to electronic assemblies technical field.The present invention use the mode of Wedge Bond by the base material by pretreatment and Si-Al wire in normal temperature, ultrasonic power 0.6-1.8W, ultrasonic time be 180-260ms and welding pressure be 30-60g under conditions of carry out ultrasonic bond.The present invention can utilize Si-Al wire to realize the wire bonding on highly reliable platform product, with good processing compatibility, the quality requirement of highly reliable platform product disclosure satisfy that, while compared to utilizing gold wire bonding, can be greatly cost-effective, gold-aluminium bonding technology can be substituted.
Description
Technical field
The present invention relates to electronic assemblies technical field, and in particular to a kind of Si-Al wire for highly reliable platform product is bonded
Technique.
Background technology
Wire bondingIt is one of current main microelectronic interconnection technology, material therefor is mainly gold
Silk and Si-Al wire.General military products mainly use high mechanical strength, associativity good and the Au silks of stable physical property, high power device
With civilian goods because the reasons such as cost are mainly using doping Si Al silks.
In military products application, because Al is the metallization material that semiconductor element pad is difficult to substitute so far, therefore in life
During production, the bonding (Au-Al systems) between dissimilar metal necessarily occurs, this system will inevitably lead to Ke Ken
Dare (Kirkendall) spreads, so as to (co-exist in 5 kinds, mainly AuAl2 is purple in interface generation Au-Al intermetallic compounds
Spot, Au2Al hickies and Au5Al2).Because the lattice constant of these compounds is different, mechanical performance and hot property are also different, instead
At once material movement can be produced, is split so as to form visible Kirkendall empty (Kirkendallvoid) in interlayer or produce
Seam, and then easily cause device solder joint to disengage and fail here.If in addition, Au-Al welds are placed under high temperature, between metal
The thickness of compound will gradually increase, and its growth state meets simple dispersion relation.Used in highly reliable platform amplifier
Aluminum pad tube core is voltage stabilizing tube core, high 20 DEG C or so of temperature during through measuring its work than circuit wafer.With the liter of temperature
Height, the wire bonding on chip then form visible Kirkendall cavity or generation crack as use dissimilar metal in interlayer,
Failed so as to easily cause device solder joint to disengage here.
Si-Al wire is as a kind of conventional bonding material, and it has the characteristics that, and cost is low, cheap, aboundresources, tool
There is vast potential for future development.With the development of modern chips industry, chip surface pad material uses aluminum more.Theoretically and
Speech, homogenous metal bonding are more more stable than dissimilar metal bonding, but because current Si-Al wire performance is not as good as spun gold, while it is existing
Bonding technology be not met by the quality requirement of highly reliable product, therefore Si-Al wire applied in highly reliable platform product compared with
It is few, it is still immature in the bonding technology technology of highly reliable platform.
In view of this, it is special to propose the present invention.
The content of the invention
It is an object of the present invention to provide a kind of Si-Al wire bonding technology for highly reliable platform product, and it being capable of profit
The wire bonding on highly reliable platform product is realized with Si-Al wire, there is good processing compatibility, disclosure satisfy that highly reliable
The quality requirement of platform product, at the same compared to using gold wire bonding, can be greatly cost-effective, gold-aluminium key can be substituted
Close technique.
The technical scheme that the present invention solves above-mentioned technical problem is as follows：
A kind of Si-Al wire bonding technology for highly reliable platform product, by by pretreatment by the way of Wedge Bond
Base material and Si-Al wire are in normal temperature, ultrasonic power 0.6-1.8W, ultrasonic time is 180-260ms and welding pressure is 30-
Ultrasonic bond is carried out under conditions of 60g.
Signified highly reliable platform refers in this specification, similar space flight, missile-borne high quality demand platform.The present invention uses
Welding equipment be WESTBONDRINC. the 7476E types of company's production, setting numerical value is 140-240, this arranges value without
Unit, it is 0.6-1.8W to be converted to after power output unit, is illustrated hereby.
In bonding techniques field, the principal element for influenceing wire bonding is that welding parameter during bonding (that is to say bonding
The running parameter of machine), specific body is ultrasonic power, ultrasonic time and welding pressure.Enter line unit in mill run using Si-Al wire
The technique of conjunction, it develops quite maturation, but Si-Al wire is such as applied on highly reliable platform product, and existing bonding technology is
Through that can not meet the high request of highly reliable platform product, and for height that highly reliable platform product working environment proposes to temperature
It is required that so that application of the Si-Al wire on highly reliable platform product is more difficult.
The present invention is provided suitable for Si-Al wire on highly reliable platform product by repetition test using Wedge Bond mode
Bonding technology, i.e. in normal temperature, ultrasonic power 0.6-1.8W, ultrasonic time is 180-260ms and welding pressure is 30-
Carry out ultrasonic bond under conditions of 60g, thus obtained product is formed with certain thickness, firm and fine and close in weld interface
Intermetallic compound, so as to obtain reliable lead welding quality.The present invention realizes the sial of highly reliable platform product demand
Wire down-lead bonding technology, the blank on highly reliable platform product homogeneity aluminum pad wire bonding is filled up, has been improved highly reliable
The reliability of platform product；Meanwhile the present invention also helps the Si-Al wire welding procedure window that exploitation is applicable on a variety of welding base materials
Mouthful.
Further, in preferred embodiments of the present invention, above-mentioned ultrasonic power is 1.2W, and the ultrasonic time is
220ms, the welding pressure are 48g.
Further, in preferred embodiments of the present invention, above-mentioned base material includes aluminum pad.
Further, in preferred embodiments of the present invention, a diameter of 38-50 μm of above-mentioned Si-Al wire.
It can preferably be coordinated with the bonding technology of the present invention from a diameter of 38-50 μm of Si-Al wire, obtained more excellent
Welding quality.
Further, in preferred embodiments of the present invention, a diameter of 40 μm of above-mentioned Si-Al wire.
Further, in preferred embodiments of the present invention, ceramic point of a knife and point of a knife length and width are used in bonding process
Respectively 30mil chopper carries out bonding welding.
Further, in preferred embodiments of the present invention, above-mentioned pretreatment includes：Prepare base material, cleaning base material and
Dry base material.
The invention has the advantages that：
The present invention realizes the application on highly reliable platform product using Si-Al wire, and because chip surface pad is more
For aluminum pad, therefore weld Si-Al wire on aluminum pad and belong to homogeneity welding, avoid the risk of generation gold-aluminium compound, symbol
Close requirement of the highly reliable platform product to reliability.Thus, bonding technology of the invention can to a certain extent replace gold-
It aluminium bonding technology, both ensure that product quality, processing compatibility were good, while saved cost again.Moreover, also help exploitation
The Si-Al wire welding parameter being applicable on a variety of welding base materials.
Brief description of the drawings
Fig. 1 is the schematic diagram of the base material wire bonding of the embodiment of the present invention；
Fig. 2 is the destructive tensile test result figure of the embodiment of the present invention 5 and existing characterization processes；
Fig. 3 is the test result figure of limit examination corresponding to the different baking times of the embodiment of the present invention 5；
Fig. 4 is the test result figure of the pull test of the embodiment of the present invention 5 at normal temperatures；
Fig. 5 is the test result figure of pull test of the embodiment of the present invention 5 under 0.5 life cycle management；
Fig. 6 is the test result figure of pull test of the embodiment of the present invention 5 under life cycle management；
Fig. 7 is that the Si-Al wire of the embodiment of the present invention 5 and gold solder disk interconnect, and weld interface section is swept after life cycle management examination
Retouch electron microscope；
Fig. 8 is that the Si-Al wire of the embodiment of the present invention 5 and aluminum pad interconnect, and weld interface section is swept after life cycle management examination
Retouch electron microscope；
Fig. 9 be the embodiment of the present invention 5 Si-Al wire on silicon substrate aluminum pad, gold plated ceramic base material and ceramic condenser lead key
Close figure；
Figure 10 be the embodiment of the present invention 5 Si-Al wire on silicon substrate aluminum pad, gold plated ceramic base material and ceramic condenser lead
Bond graph.
Embodiment
The principle and feature of the present invention are described below in conjunction with accompanying drawing, the given examples are served only to explain the present invention, and
It is non-to be used to limit the scope of the present invention.Unreceipted actual conditions person in embodiment, the bar suggested according to normal condition or manufacturer
Part is carried out.Agents useful for same or the unreceipted production firm person of instrument, it is the conventional products that can be obtained by commercially available purchase.
In the following example of the present invention, a diameter of 38 μm of the Si-Al wire of use, the brand of bonder is WEST
BOND, type 7476E-79, the brand of chopper is DEWEYL, model MCLVO-1/16-625-45-C-3050-
M.Chopper material be carbon tungsten alloy handle of a knife (TungstenCarbide Shank), ceramic point of a knife (CeramicTip), 90 ° it is vertical
Enter silk (WireFeed：VerticalFeed), 45 ° of wire feed (HoleAngle：45 °), welding point of a knife use concave surface (Concave)
Design, point of a knife size are 30mil.The product object of the following example application is ceramic circuit piece, the signified base of corresponding embodiment
Material is ceramic circuit piece, and it includes aluminum pad.
Embodiment 1：
The Si-Al wire bonding technology for highly reliable platform product of the present embodiment, specifically includes following steps：
(1) pretreatment：Prepare base material, cleaning base material and drying base material；
(2) instrument prepares：Si-Al wire and chopper are installed, close the heating function of chopper, aids in heating without using thermal station,
It is bonded under normal temperature.
(3) bonding parameter is set：Ultrasonic power is 0.6W, ultrasonic time is 180ms and welding pressure is 30g.Si-Al wire
A diameter of 38 μm.
Embodiment 2：
The Si-Al wire bonding technology for highly reliable platform product of the present embodiment, specifically includes following steps：
(1) pretreatment：Prepare base material, cleaning base material and drying base material；
(2) instrument prepares：Si-Al wire and chopper are installed, close the heating function of chopper, aids in heating without using thermal station,
It is bonded under normal temperature.
(3) bonding parameter is set：Ultrasonic power is 0.9W, ultrasonic time is 200ms and welding pressure is 42g.Si-Al wire
A diameter of 45 μm.
Embodiment 3：
The Si-Al wire bonding technology for highly reliable platform product of the present embodiment, specifically includes following steps：
(1) pretreatment：Prepare base material, cleaning base material and drying base material；
(2) instrument prepares：Si-Al wire and chopper are installed, close the heating function of chopper, aids in heating without using thermal station,
It is bonded under normal temperature.
(3) bonding parameter is set：Ultrasonic power is 1.2W, ultrasonic time is 220ms and welding pressure is 48g.Si-Al wire
A diameter of 40 μm.
Embodiment 4：
The Si-Al wire bonding technology for highly reliable platform product of the present embodiment, specifically includes following steps：
(1) pretreatment：Prepare base material, cleaning base material and drying base material；
(2) instrument prepares：Si-Al wire and chopper are installed, close the heating function of chopper, aids in heating without using thermal station,
It is bonded under normal temperature.
(3) bonding parameter is set：Ultrasonic power is 1.5W, ultrasonic time is 240ms and welding pressure is 50g.Si-Al wire
A diameter of 50 μm.
Embodiment 5：
The Si-Al wire bonding technology for highly reliable platform product of the present embodiment, specifically includes following steps：
(1) pretreatment：Prepare base material, cleaning base material and drying base material；
(2) instrument prepares：Si-Al wire and chopper are installed, close the heating function of chopper, aids in heating without using thermal station,
It is bonded under normal temperature.
(3) bonding parameter is set：Ultrasonic power is 1.8W, ultrasonic time is 260ms and welding pressure is 60g.Si-Al wire
A diameter of 40 μm.
The matrix structure of above-described embodiment 1-5 applications is as shown in figure 1, wherein：Al-Au is represented by voltage stabilizing chip bonded silica
On aluminium wire to gold plated ceramic transmission line；Al-G is represented by chip bonding Si-Al wire to the gold-plated support plate of kovar；Al-3030X tables
Show by chip bonding Si-Al wire to multichip ceramic electric capacity 3030X；Al-2354 is represented by chip bonding Si-Al wire to chip silicon
On electric capacity 2354.
Test example 1：
Highly reliable platform Si-Al wire bonding technology exploitation is forward and backward, carries out Si-Al wire bonding, embodiment 5 under the same conditions
With the destructive tensile test result of existing characterization processes, as shown in Figure 2.
Before implementing it can be seen from upper figure there is underproof situation in Si-Al wire bonded portion test point；Sial after implementation
Silk bonding test point is all qualified；Lifting about 217% before Si-Al wire bond strength is relatively implemented after implementation.
Test example 2：
The purpose of this test example in embodiment 1-5 by GJB2438A-2002 C.2.9.7 5 packet requirement,
Carry out 300 ± 10 DEG C, 1 hour to toast, the examination of 1h, 5h, 10h, 24h bond strength limit is then carried out, to evaluate wire bonding
Reliability, shown according to test result, embodiment 1-5 detected value meets the requirements, and test data is relatively stable, takes
Exemplified by the testing result of embodiment 5, as shown in Figure 3.
Test example 3：
The pulling force that the purpose of this test example is to carry out embodiment 1-5 different times is examined, and is shown according to testing result
Show, Si-Al wire is either bonded with gold-plated kovar cavity, gold plated ceramic or gold-plated electric capacity, and its intensity meets the requirements.Still
By taking embodiment 5 as an example, there is provided its testing result.As Figure 4-Figure 6, wherein Fig. 4 is normal temperature condition to the testing result of embodiment 5
Under test result, Fig. 5 is 0.5 life cycle management test result, and Fig. 6 is life cycle management test result.
Meanwhile by after the progress section incision of solder joint section, found using the microscopic appearance of scanning electron microscope observation welded section,
Intermetallic compound is formed between Si-Al wire and pad.Exemplified by the testing result of Example 5, Fig. 7 is Si-Al wire and gold solder disk
Interconnection, weld interface profile scanning electron microscope after life cycle management examination；Fig. 8 is that Si-Al wire interconnects with aluminum pad, week life-cycle
Weld interface profile scanning electron microscope after end-of-term examination core.As can be seen from Figures 7 and 8, formed between Si-Al wire and aluminium, gold between metal
Compound, and interface cleaning, welding cavity occur, and illustrate that welding quality is excellent, meet product requirement.
In addition, observation embodiment 5 passes through life cycle management environmental test Si-Al wire pattern, as shown in Figure 9 and Figure 10, silicon
Aluminium wire surface without change colour, grow aluminium must situations such as occur；Si-Al wire the solder joint edge on chip without discoloration, spot situations such as
Occur；Si-Al wire occurs at the solder joint edge on Au pads without situations such as discoloration, spot.
The foregoing is only presently preferred embodiments of the present invention, be not intended to limit the invention, it is all the present invention spirit and
Within principle, any modification, equivalent substitution and improvements made etc., it should be included in the scope of the protection.
Claims (7)
1. a kind of Si-Al wire bonding technology for highly reliable platform product, it is characterised in that will be through by the way of Wedge Bond
The base material for crossing pretreatment is 180-260ms in normal temperature, ultrasonic power 0.6-1.8W, ultrasonic time with Si-Al wire and welding is pressed
Power carries out ultrasonic bond under conditions of being 30-60g.
2. the Si-Al wire bonding technology according to claim 1 for highly reliable platform product, it is characterised in that described super
Acoustical power is 1.2W, and the ultrasonic time is 220ms, and the welding pressure is 48g.
3. the Si-Al wire bonding technology according to claim 1 or 2 for highly reliable platform product, it is characterised in that institute
Stating base material includes aluminum pad.
4. the Si-Al wire bonding technology according to claim 1 or 2 for highly reliable platform product, it is characterised in that institute
State Si-Al wire a diameter of 38-50 μm.
5. the Si-Al wire bonding technology according to claim 4 for highly reliable platform product, it is characterised in that the silicon
A diameter of 40 μm of aluminium wire.
6. the Si-Al wire bonding technology according to claim 5 for highly reliable platform product, it is characterised in that be bonded
During bonding welding carried out using the chopper that ceramic point of a knife and point of a knife length and width are respectively 30mil.
7. the Si-Al wire bonding technology according to claim 1 for highly reliable platform product, it is characterised in that described pre-
Processing includes：Prepare base material, cleaning base material and drying base material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710934734.0A CN107808862A (en) | 2017-10-10 | 2017-10-10 | A kind of Si-Al wire bonding technology for highly reliable platform product |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710934734.0A CN107808862A (en) | 2017-10-10 | 2017-10-10 | A kind of Si-Al wire bonding technology for highly reliable platform product |
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| Publication Number | Publication Date |
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| CN107808862A true CN107808862A (en) | 2018-03-16 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201710934734.0A Pending CN107808862A (en) | 2017-10-10 | 2017-10-10 | A kind of Si-Al wire bonding technology for highly reliable platform product |
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Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101673693A (en) * | 2009-09-22 | 2010-03-17 | 贵州振华风光半导体有限公司 | Bonding system of high-reliability thick-film mixed integrated circuit and manufacturing method thereof |
-
2017
- 2017-10-10 CN CN201710934734.0A patent/CN107808862A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101673693A (en) * | 2009-09-22 | 2010-03-17 | 贵州振华风光半导体有限公司 | Bonding system of high-reliability thick-film mixed integrated circuit and manufacturing method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 姚友谊等: "Si-Al丝键合技术研究", 《电子工艺技术》 * |
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Application publication date: 20180316 |