CN107799569A - A kind of pixel defining layer module of QLED display panels - Google Patents
A kind of pixel defining layer module of QLED display panels Download PDFInfo
- Publication number
- CN107799569A CN107799569A CN201710836302.6A CN201710836302A CN107799569A CN 107799569 A CN107799569 A CN 107799569A CN 201710836302 A CN201710836302 A CN 201710836302A CN 107799569 A CN107799569 A CN 107799569A
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- layer
- display panels
- electrode
- pixel defining
- qled display
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The present invention relates to display technology field, more particularly to a kind of pixel defining layer module of QLED display panels.Including pixel definition groove, the hole injection layer stacked gradually from bottom to top in pixel definition groove, hole transmission layer, quantum dot light emitting layer, electron transfer layer and electron injecting layer.The pixel defining layer module and its manufacturing process of a kind of QLED display panels of the present invention, make its service life significantly be extended, product quality is more excellent by rationally designing processing technology.
Description
Technical field
The present invention relates to display technology field, more particularly to a kind of pixel defining layer module of QLED display panels.
Background technology
Quanta point electroluminescent diode (Quantum dots Light-emitting Diodes, QLED) is a kind of new
The emissive type diode of type, QLED display panels compare the spy with traditional display panel with high color saturation and high colour gamut
Point, existing QLED display panel structures complexity is, it is necessary to set via to connect, and production cost is higher, and product competitiveness is not strong.
The content of the invention
The technical problem to be solved in the present invention is to provide a kind of QLED display panels, the knot of QLED display panels can be simplified
Structure, the production cost of QLED display panels is reduced, lift product competitiveness.Meanwhile present invention also offers a kind of QLED to show
The pixel defining layer module and its manufacturing process of panel.
In order to solve the above technical problems, the technical solution adopted by the present invention is:A kind of QLED display panels, including:Substrate,
Cover the cushion of the substrate, the grid on the cushion, the covering grid and cushion gate insulator,
Active layer on the gate insulator, on the gate insulator and with the source of two end in contact of the active layer
Pole and drain electrode, the first electrode on the gate insulator and with the drain contact, the covering source electrode, drain electrode, the
The pixel defining layer of one electrode and gate insulator, the pixel definition groove in the pixel defining layer in the first electrode,
Hole injection layer, hole transmission layer, quantum dot light emitting layer, the electronics stacked gradually from bottom to top in the pixel definition groove
Transport layer and electron injecting layer, the second electrode contacted in the pixel defining layer and with the electron injecting layer and
Encapsulated layer in the second electrode.
The first electrode is reflecting electrode, and the second electrode is transparency electrode.
The quantum dot light emitting layer includes organic solvent material and the quantum dot material being dispersed in the organic solvent material
Material, the quanta point material include:One or more in CdS, CdSe, CdTe, ZnS, ZnSe, InAs and InP.
The material of the source electrode, drain electrode and first electrode be molybdenum, iron and aluminium in one or more combinations, described second
The material of electrode is tin indium oxide or indium zinc oxide.
A kind of pixel defining layer module of QLED display panels, including pixel definition groove, in pixel definition groove under
Hole injection layer, hole transmission layer, quantum dot light emitting layer, electron transfer layer and the electron injecting layer stacked gradually on and.
A kind of manufacturing process of the pixel defining layer module of QLED display panels, step are as follows:
1), structure and process respectively
Pixel defining layer module, including pixel definition groove, the hole that is stacked gradually from bottom to top in pixel definition groove
Implanted layer, hole transmission layer, quantum dot light emitting layer, electron transfer layer and electron injecting layer;
Every layer is manufactured according to prior art, it is then compound successively according to overlapping order;
2), pre-process
Pretreatment fluid is sprayed after compound to its outer surface, spraying terminates to dry using blast drier;
The component of pretreatment fluid is:5 parts of activated carbon, 3.3 parts of antisettling agent, 15 parts of water, 10 parts of HCPE,
0.5 part of sanguinarine;
3), subsequent treatment
Pretreated pixel defining layer module is placed in closed container, vacuumizes holding more than 24 hours, it is then extensive
Multiple normal pressure further takes out.
Advantage for present invention is with effect:
1) a kind of, QLED display panels of the invention, including:Substrate, the cushion of the covering substrate, located at described slow
Rush the grid on layer, the gate insulator of the covering grid and cushion, the active layer on the gate insulator, set
In on the gate insulator and with the source electrode of two end in contact of the active layer and drain electrode, on the gate insulator simultaneously
The pixel defining layer of first electrode, the covering source electrode, drain electrode, first electrode and gate insulator with the drain contact,
Pixel definition groove in the pixel defining layer in the first electrode, in the pixel definition groove from bottom to top successively
Hole injection layer, hole transmission layer, quantum dot light emitting layer, electron transfer layer and the electron injecting layer of stacking, located at the pixel
The second electrode contacted on definition layer and with the electron injecting layer and the encapsulated layer in the second electrode, pass through
Source-drain electrode and QLED first electrode are set with layer, connection number of vias can be reduced, avoid showing not caused by via
It is good, product stability is lifted, reduces production cost, lifts product competitiveness.
2), the pixel defining layer module and its manufacturing process of a kind of QLED display panels of the invention, passes through rational design
Processing technology makes its service life significantly be extended, and product quality is more excellent.
Brief description of the drawings
The invention will be further described below in conjunction with the accompanying drawings:
Fig. 1 is a kind of structure chart of QLED display panels of the present invention;
In figure:Substrate 1, cushion 2, grid 3, gate insulator 4, active layer 5, source electrode 6, drain electrode 7, first electrode 8, as
Plain definition layer 12, pixel definition groove 121, hole injection layer 91, hole transmission layer 92, quantum dot light emitting layer 93, electron transfer layer
94th, electron injecting layer 95, second electrode 10, encapsulated layer 11.
Embodiment
Embodiment 1
Referring to Fig. 1, the present invention provides a kind of QLED display panels, including:The cushion of substrate 1, the covering substrate
2nd, the gate insulator 4, exhausted located at the grid of the grid 3 on the cushion, the covering grid 3 and cushion 2
Active layer 5 in edge layer, on the gate insulator 4 and with the source electrode 6 of two end in contact of the active layer 5 and drain electrode 7,
It is on the gate insulator 4 and electric with 7 first electrodes 8 contacted that drain, the covering source electrode 6, drain electrode 7, first
The pixel defining layer 12 of pole 8 and gate insulator 4, the pixel definition in the pixel defining layer 12 in the first electrode 8
Groove 121, the hole injection layer 91 stacked gradually from bottom to top in the pixel definition groove 121, hole transmission layer 92, quantum
Point luminescent layer 93, electron transfer layer 94 and electron injecting layer 95, in the pixel defining layer 12 and with the electron injection
The second electrode 10 of the contact of layer 95 and the encapsulated layer 11 in the second electrode.
Specifically, the first electrode is reflecting electrode, and the second electrode is transparency electrode.
Preferably, the quantum dot light emitting layer includes organic solvent material and the amount being dispersed in the organic solvent material
Son point material, the quanta point material include:One or more in CdS, CdSe, CdTe, ZnS, ZnSe, InAs and InP.
Specifically, the material of the source electrode, drain electrode and first electrode is one or more combinations in molybdenum, iron and aluminium,
The material of the second electrode is tin indium oxide or indium zinc oxide.
Specifically, the encapsulated layer 11 is transparent, it is preferable that the encapsulated layer 11 is ultra-thin glass, with described in lifting
The water oxygen barriering effect of encapsulated layer 11.
Specifically, the present invention by source-drain electrode and QLED first electrode with layer set, can reduce connection via and because
Display is bad caused by via, lifts product stability, during fabrication, it is possible to reduce light shield quantity, simplification of flowsheet, reduces
Production cost, product competitiveness is lifted, while the film layer quantity of QLED display panels can also be reduced, reduce QLED display panels
Thickness, realize ultra-thin display.
Embodiment 2
A kind of manufacturing process of the pixel defining layer module of QLED display panels, step are as follows:
1), structure and process respectively
Pixel defining layer module, including pixel definition groove, the hole that is stacked gradually from bottom to top in pixel definition groove
Implanted layer, hole transmission layer, quantum dot light emitting layer, electron transfer layer and electron injecting layer;
Every layer is manufactured according to prior art, it is then compound successively according to overlapping order;
2), pre-process
Pretreatment fluid is sprayed after compound to its outer surface, spraying terminates to dry using blast drier;
The component of pretreatment fluid is:5 parts of activated carbon, 3.3 parts of antisettling agent, 15 parts of water, 10 parts of HCPE,
0.5 part of sanguinarine;
3), subsequent treatment
Pretreated pixel defining layer module is placed in closed container, vacuumizes holding more than 24 hours, it is then extensive
Multiple normal pressure further takes out.
The present invention is not limited to above-described embodiment, and embodiment is exemplary, it is intended to for explaining the present invention, and can not
It is interpreted as limitation of the present invention.
Claims (1)
1. a kind of pixel defining layer module of QLED display panels, it is characterised in that including pixel definition groove, located at pixel definition
Hole injection layer, hole transmission layer, quantum dot light emitting layer, electron transfer layer and the electron injection stacked gradually from bottom to top in groove
Layer.
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CN201710836302.6A CN107799569A (en) | 2017-09-16 | 2017-09-16 | A kind of pixel defining layer module of QLED display panels |
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CN201710836302.6A CN107799569A (en) | 2017-09-16 | 2017-09-16 | A kind of pixel defining layer module of QLED display panels |
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Citations (8)
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CN103681773A (en) * | 2013-12-27 | 2014-03-26 | 京东方科技集团股份有限公司 | Organic electroluminescent display device, preparation method thereof and display device |
CN105118850A (en) * | 2015-09-22 | 2015-12-02 | 深圳市华星光电技术有限公司 | Active matrix organic light-emitting diode substrate and display device thereof |
CN105206641A (en) * | 2015-10-12 | 2015-12-30 | Tcl集团股份有限公司 | QLED and TFT integrating device and manufacturing method thereof |
CN105810851A (en) * | 2016-05-03 | 2016-07-27 | 深圳市华星光电技术有限公司 | Preparation method of quantum dot light-emitting diode display and quantum dot light-emitting diode display |
CN105870154A (en) * | 2016-04-28 | 2016-08-17 | 京东方科技集团股份有限公司 | Array substrate and manufacturing method thereof and OLED display device |
CN106935713A (en) * | 2015-12-28 | 2017-07-07 | 三星显示有限公司 | Organic light-emitting display device and its manufacture method |
CN106960913A (en) * | 2017-03-31 | 2017-07-18 | 武汉华星光电技术有限公司 | Light emitting diode with quantum dots display panel and preparation method thereof |
CN107111973A (en) * | 2015-01-12 | 2017-08-29 | 杜比实验室特许公司 | Block of pixels structure and layout |
-
2017
- 2017-09-16 CN CN201710836302.6A patent/CN107799569A/en active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103681773A (en) * | 2013-12-27 | 2014-03-26 | 京东方科技集团股份有限公司 | Organic electroluminescent display device, preparation method thereof and display device |
CN107111973A (en) * | 2015-01-12 | 2017-08-29 | 杜比实验室特许公司 | Block of pixels structure and layout |
CN105118850A (en) * | 2015-09-22 | 2015-12-02 | 深圳市华星光电技术有限公司 | Active matrix organic light-emitting diode substrate and display device thereof |
CN105206641A (en) * | 2015-10-12 | 2015-12-30 | Tcl集团股份有限公司 | QLED and TFT integrating device and manufacturing method thereof |
CN106935713A (en) * | 2015-12-28 | 2017-07-07 | 三星显示有限公司 | Organic light-emitting display device and its manufacture method |
CN105870154A (en) * | 2016-04-28 | 2016-08-17 | 京东方科技集团股份有限公司 | Array substrate and manufacturing method thereof and OLED display device |
CN105810851A (en) * | 2016-05-03 | 2016-07-27 | 深圳市华星光电技术有限公司 | Preparation method of quantum dot light-emitting diode display and quantum dot light-emitting diode display |
CN106960913A (en) * | 2017-03-31 | 2017-07-18 | 武汉华星光电技术有限公司 | Light emitting diode with quantum dots display panel and preparation method thereof |
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Application publication date: 20180313 |