CN107799539A - A kind of photodetection structure and preparation method thereof - Google Patents
A kind of photodetection structure and preparation method thereof Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention provides a kind of photodetection structure and preparation method thereof, including：Primary scintillator layer, the X ray relatively low for absorbing energy, and X ray is converted into visible ray；Secondary fluor layer, the X ray higher for absorbing energy, and X ray is converted into visible ray；First visible light sensor, between the primary scintillator layer and the secondary fluor layer, electric charge is converted to for will transmit through the visible ray of the primary scintillator layer and the visible ray of secondary fluor layer reflection, and is stored in first visible light sensor.One substrate is provided, successively prepare to form the first visible light sensor by manufacture of semiconductor on the substrate, primary scintillator layer is formed in the first surface of first visible light sensor, then forms secondary fluor layer in the second surface of first visible light sensor.The present invention can have the good image definition of comparison under high-energy ray, while have higher optical responsivity.
Description
Technical field
The present invention relates to medical imaging diagnostic field, more particularly to a kind of photodetection structure and preparation method thereof.
Background technology
Flat panel image sensor, it is commonly used to the fields such as medical radiation imaging, industrial flaw detection, safety check.Lithograph picture passes
Sensor, particularly large-size images sensor, the usual several tens cm of area is millions of to ten million pixel, is detected in radioscopic image
In the application of device, typically to quadrature and reach 43cm*43cm, so being all at present to use amorphous silicon technology (monocrystalline silicon current one
As be 24~30cm diameters).
As shown in figure 1, presently used Amorphous silicon flat-panel detectors are usually multilayer lamination structure.Including upper strata
Scintillator, the X ray of incidence is converted into visible ray.Radiation of visible light, can on the visible light sensor (sensor) of lower floor
See that optical sensor will be seen that light is converted to electronics.The problem of structure is：Absorption of the X ray in material, it is most of close
Incident surface, and caused visible ray is any direction.It is concentrated mainly on because absorption of the X ray in scintillator is luminous
The plane of incidence, cause visible ray concentrate caused by position also close to upper surface.Visible ray luminous point is from following visible light sensor
Farther out, transmission range farther out will cause the diverging of visible ray, so as to play the crosstalk of adjacent pixel, cause image to obscure.
In order to solve problems described above, patent EP2902807A1 proposes a kind of new structure.As shown in Fig. 2 top
It is scintillator to divide 20；Bottom is divided into TFT sensors, and its function produces scintillator as the visible light sensor shown in Fig. 1
Raw visible ray is converted to electronics.Unlike, the plane of incidence of X ray is TFT sensor covers in the patent, rather than scintillator
Face.After so X ray penetrates TFT sensors, it is irradiated on scintillator, concentrates on the interface of scintillator and TFT sensor contacts
Near.Because the position for producing TFT sensor of the position of visible ray with receiving visible ray is close, reduce the hair of visible ray
Dissipate, so as to improve the simple analysis degree of image.But the program still also has another problem, when with the stronger high energy of penetration capacity
During radiation exposure, the increase of ray incidence depth, when ray energy reaches to a certain degree, incident deep bottom reaches and TFT sensors
Surface remote position, still suffer from the divergence problem of visible ray.
Therefore, how effectively to solve the diverging of visible ray in flat panel image sensor, reduce crosstalk, improved optical responsivity
As one of those skilled in the art's urgent problem to be solved.
The content of the invention
In view of the above the shortcomings that prior art, it is an object of the invention to provide a kind of photodetection structure and its system
Preparation Method, picture quality is had an impact for solving diverging, the crosstalk of visible ray in the prior art, and optical responsivity is low etc.
Problem.
In order to achieve the above objects and other related objects, the present invention provides a kind of photodetection structure, the photodetection
Structure comprises at least：
Primary scintillator layer, the X ray relatively low for absorbing energy, and X ray is converted into visible ray；
Secondary fluor layer, the X ray higher for absorbing energy, and X ray is converted into visible ray；
First visible light sensor, between the primary scintillator layer and the secondary fluor layer, for by thoroughly
Cross the visible ray of the primary scintillator layer and the visible ray of secondary fluor layer reflection is converted to electric charge, and be stored in institute
State in the first visible light sensor.
Preferably, the material of the primary scintillator layer and the secondary fluor layer is cesium iodide or gadolinium oxysulfide.
Preferably, first visible light sensor includes substrate and with two-dimensional array in more on the substrate
Individual pixel cell；Each pixel cell includes thin film transistor (TFT) and PIN photodiode；The substrate and the pole of PIN photoelectricity two
The top electrode and hearth electrode of pipe are transparent or semitransparent material.
Set it is highly preferred that the thin film transistor (TFT) and the PIN photodiode are non-overlapping on the incident vertical plane of X ray
Put.
It is highly preferred that the thickness of the substrate is set as 15um~50um.
It is highly preferred that the substrate is optical fiber guide plate, multiple optical fiber perpendicular to surface are provided with the optical fiber guide plate
Conduit.
It is highly preferred that the substrate, which is density, is not more than 3g/cm3Material.
It is highly preferred that the material of the substrate is polyimides, plastics, silicon.
Preferably, the photodetection structure also includes the second visible light sensing positioned at the secondary fluor layer lower floor
Device, the visible ray for will transmit through the secondary fluor layer are converted to electric charge, and are stored in second visible light sensor
In.
In order to achieve the above objects and other related objects, the present invention also provides a kind of preparation side of above-mentioned photodetection structure
Method, the preparation method comprise at least：
One substrate is provided, each material layer is successively prepared on the substrate to form the first visible light sensor, described
The first surface of first visible light sensor forms primary scintillator layer, then in the second table of first visible light sensor
Face forms secondary fluor layer.
Preferably, the primary scintillator layer and the secondary fluor layer invest described first by optical coupled sticker
The surface of visible light sensor.
Preferably, the primary scintillator layer and the secondary fluor layer are formed by way of plated film.
As described above, photodetection structure of the present invention and preparation method thereof, has the advantages that：
Photodetection structure of the present invention and preparation method thereof can have the good image definition of comparison under high-energy ray
(diverging for reducing light), while have higher optical responsivity (conversion efficiency).
Brief description of the drawings
Fig. 1 is shown as the structural representation of Amorphous silicon flat-panel detectors of the prior art.
Fig. 2 is shown as a kind of structural representation of Amorphous silicon flat-panel detectors for reducing visible ray diverging of the prior art
Figure.
Fig. 3 is shown as a kind of embodiment of the photodetection structure of the present invention.
Fig. 4 is shown as the another embodiment of the photodetection structure of the present invention.
Component label instructions
5 photodetection structures
51 primary scintillator layers
52 first visible light sensors
521 substrates
522 non-crystalline silicons
523 drain terminals
524 grid ends
525 sources
526 PIN photodiodes
527 hearth electrodes
528 top electrodes
529 offset lines
53 secondary fluor layers
S1~S2 steps
Embodiment
Illustrate embodiments of the present invention below by way of specific instantiation, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through specific realities different in addition
The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
Refer to Fig. 3~Fig. 4.It should be noted that the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, the component relevant with the present invention is only shown in schema then rather than according to package count during actual implement
Mesh, shape and size are drawn, and kenel, quantity and the ratio of each component can be a kind of random change during its actual implementation, and its
Assembly layout kenel may also be increasingly complex.
Embodiment one
As shown in figure 3, the present invention provides a kind of photodetection structure 5, the photodetection structure 5 comprises at least：
Primary scintillator layer 51, the first visible light sensor 52, secondary fluor layer 53.
As shown in figure 3, the X ray (X ray) that the primary scintillator layer 51 is located at the photodetection structure 5 receives
Face, the X ray relatively low for absorbing energy, and X ray is converted into visible ray V1, it is seen that light V1 is from the primary scintillator layer
51 outgoing, are detected by first visible light sensor 52.
Specifically, the material of the primary scintillator layer 51 includes but is not limited to cesium iodide or gadolinium oxysulfide, arbitrarily can be by X
The material that ray is converted to visible ray is applied to the present invention, is not limited with the present embodiment.
As shown in figure 3, the secondary fluor layer 53 is located at the inside of the photodetection structure 5, for absorbing energy
Higher X ray, and X ray is converted into visible ray.
Specifically, the material of the secondary fluor layer 53 includes but is not limited to cesium iodide or gadolinium oxysulfide, arbitrarily can be by X
The material that ray is converted to visible ray is applied to the present invention, is not limited with the present embodiment.X ray passes through the primary scintillator
Layer 51, wherein energy lower part is absorbed and converted by the primary scintillator layer 51, the higher part transmission of energy
The primary scintillator layer 51 and first visible light sensor 52 are absorbed by the secondary fluor layer 53, and energy is higher
X ray is converted into visible ray, it is seen that light V1 is detected through reflecting by first visible light sensor 52.
More specifically, the thickness sum of the primary scintillator layer 51 and the secondary fluor layer 53 with the prior art
Individual layer scintillator layers thickness it is basically identical, be set as within 1mm, using different materials when, its thickness also differs.
In the present embodiment, use cesium iodide material then the thickness sum of the primary scintillator layer 51 and the secondary fluor layer 53 for
0.2mm~0.3mm；Using gadolinium oxysulfide material then the thickness of the primary scintillator layer 51 and the secondary fluor layer 53 it
Thickness can be set according to different materials, be not limited with the present embodiment with for 0.6mm, those skilled in the art.
As shown in figure 3, first visible light sensor 52 is located at the primary scintillator layer 51 and second flicker
Between body layer 53, visible ray and the secondary fluor layer 53 for will transmit through the primary scintillator layer 51 reflect visible
Light is converted to electric charge, and is stored in first visible light sensor 52.
Specifically, as shown in figure 3, first visible light sensor 52 include substrate 521 and with two-dimensional array in
Multiple pixel cells on the substrate 521.
More specifically, in the present embodiment, to ensure that visible ray caused by the secondary fluor layer 53 can be irradiated to
On the PIN photodiode 526, the substrate 521 is transparent or semitransparent material.The substrate 521 uses relatively thin material
Material is to reduce the diverging of visible ray, and in the present embodiment, the thickness of the substrate 521 is set as 15um~50um, should be less than picture
The 1/3 of plain size.Meanwhile in order to reduce absorption of the substrate 521 to X ray, the material of the substrate 521 should select low close
Degree, the material of low atomic, the substrate 521 are that density is not more than 3g/cm3Material, (polyamides is sub- by including but not limited to PI
Amine), plastics and silicon.
More specifically, each pixel cell includes thin film transistor (TFT) and PIN photodiode 526.The thin film transistor (TFT)
(TFT) non-crystalline silicon 522, drain terminal 523, grid end 524, source 525 are included, by controlling the voltage of the grid end 524 to turn on
Thin film transistor (TFT) is stated, switching function is realized with this.In order to reduce dead resistance, drain terminal 523, grid end 524, source 525 are using gold
Belong to material, the including but not limited to metal such as aluminium, molybdenum.The PIN photodiode 526 successively include p-type doped region, intrinsic region and
N-type doping area, its lower floor is provided with hearth electrode 527, upper strata is provided with top electrode 528, and biasing is provided with the top electrode 528
Line 529, visible ray is absorbed in the PIN photodiode 526 and is converted to the process of electric charge and is mainly completed in intrinsic region.To protect
Visible ray caused by demonstrate,proving the secondary fluor layer 53 can be irradiated on the PIN photodiode 526, the hearth electrode
527th, the top electrode 528 is transparent or semitransparent material, in the present embodiment, the hearth electrode 527 and the top electrode 528
Using ITO (indium tin oxide transparent conductive semiconductor film).As shown in figure 3, the thin film transistor (TFT) and the pole of PIN photoelectricity two
The non-overlapping setting on the incident vertical plane of X ray of pipe 526, to reduce the thin film transistor (TFT) to the PIN photodiode 526
Absorb the influence of visible ray.
The present invention uses double-deck scintillator layers, ensure that gross thickness, total absorption and conversion efficiency and individual layer scintillator
In the case of layer identical, reduce and produce transmission of visible light distance, reduce the diverging of visible ray, while increase penetrating for visible ray
Rate, improve image definition.
Embodiment two
The present embodiment provides a kind of photodetection structure, and basically identical with the structure of embodiment one, difference is, institute
It is optical fiber guide plate (fiber optical plate) to state substrate 521.
Specifically, as shown in figure 4, being provided with multiple fibre-optic catheters perpendicular to surface in the optical fiber guide plate, described
Visible ray refracts to first visible light sensor 52 by each fibre-optic catheter caused by two scintillator layers 53, and is absorbed,
The diverging of visible ray can be effectively reduced.
Embodiment three
The present embodiment provides a kind of photodetection structure, basically identical with the structure of embodiment one and embodiment two, different
Part is that the lower floor of the secondary fluor layer 53 also includes the second visible light sensor (not shown), for by thoroughly
The visible ray for crossing the secondary fluor layer 53 is converted to electric charge, and is stored in second visible light sensor.
Further, the structure that distributes alternately of multilayer scintillator layers and multilayer visible light sensor can also be expanded to.Layer
Number is more, it is seen that the path of light is shorter, and the diverging of light is slighter, and image is more clear；Meanwhile the scintillator layers of different layers use solely
Vertical visible light sensor, X-ray energy is bigger, and depth of shine is deeper, thus can reach the detection of multiple level X ray.
Example IV
The present invention also provides a kind of preparation method of the photodetection structure 5, and the preparation method comprises at least：
Step S1：One substrate is provided, successively prepares each material layer by manufacture of semiconductor on the substrate to form
One visible light sensor.
Specifically, in the present embodiment, the substrate 521 is optical fiber guide plate.Grid end is deposited on the surface of the substrate 521
524 material layer, in the present embodiment, each material layer is formed using physical vaporous deposition, can be adopted in specific preparation process
Each material layer is formed in any way, is not limited with the present embodiment；Again grid end 524 and associated metal are formed through overexposure, etching
Line；Non-crystalline silicon 522, drain terminal 523 and source 525 are sequentially formed using same procedure；The thin film transistor (TFT) is formed with this.
The metal level of hearth electrode 527 of the PIN photodiode 526 is deposited, similarly, hearth electrode 527 and phase are formed through overexposure, etching
Metal connecting line is closed, the PIN photodiode 526 is connected by hearth electrode 527 with the thin film transistor (TFT)；Using same procedure
Sequentially form n-type doping area, intrinsic region, p-type doped region, top electrode 528 and the offset line of the PIN photodiode 526
529, the PIN photodiode 526 is formed with this.Layer protective layer is coated with offset line 529, first visible ray passes
Prepared by sensor 52 completes.
If the material selection PI of the substrate 521, needs PI being coated on glass, complete first visible ray and pass
After the preparation of sensor 52, first visible light sensor 52 is stripped down from glass.
Step S2：Primary scintillator layer 51 is formed in the first surface of first visible light sensor 52, then in institute
The second surface for stating the first visible light sensor 52 forms secondary fluor layer 53.
As a kind of implementation of the present invention, the primary scintillator layer 51 and the secondary fluor layer 53 pass through light
Learn the surface that coupling sticker invests first visible light sensor 52.
Specifically, there is provided the primary scintillator layer 51 and the secondary fluor layer 53, due to first visible ray
The protective layer of sensor 52 is very thin, generally um ranks, is easily damaged, and is not suitable for taking for mechanical arm, therefore first in institute
The first surface of the first visible light sensor 52 is stated by the attached primary scintillator layer 51 of optical coupled sticker, so described
The both sides of one visible light sensor 52 are respectively the substrate 521 and the primary scintillator layer 51, and relatively described first is visible
For the protective layer of optical sensor 52, thickness greatly increases, and can directly be captured by mechanical arm can without damaging described first
The device seen in optical sensor 52.Then the primary scintillator layer 51 that has attached and described is directly captured by mechanical arm
First visible light sensor 52, pass through optical coupled sticker attached described in the second surface of first visible light sensor 52
Two scintillator layers 53.The first surface of first visible light sensor 52 is oppositely arranged with second surface, in the present embodiment,
The first surface of first visible light sensor 52 is pixel cell surface, and second surface is substrate surface.
As another implementation of the present invention, the primary scintillator layer 51 and the secondary fluor layer 53 pass through
The mode of plated film is formed at the surface of first visible light sensor 52, and other steps are consistent with a upper implementation, herein
Do not repeat one by one.
Second visible light sensor is formed by same method, specific steps do not repeat one by one herein.
As described above, photodetection structure of the present invention and preparation method thereof, has the advantages that：
Photodetection structure of the present invention and preparation method thereof passes through the design increase of double-deck scintillator under high-energy ray
The definition of image, meanwhile, the thickness of individual layer scintillator is less than the thickness of scintillator in the prior art, can effectively shorten visible
Light escapes from path, reduces by uptake, improves conversion efficiency.
In summary, the present invention provides a kind of photodetection structure, including：Primary scintillator layer, for absorb energy compared with
Low X ray, and X ray is converted into visible ray；Secondary fluor layer, the X ray higher for absorbing energy, and X is penetrated
Line is converted into visible ray；First visible light sensor, between the primary scintillator layer and the secondary fluor layer, use
Electric charge is converted in the visible ray that the visible ray that will transmit through the primary scintillator layer and the secondary fluor layer reflect, and is deposited
It is stored in first visible light sensor.A kind of preparation method is also provided, including：One substrate is provided, led on the substrate
Cross physical vapour deposition (PVD) successively to prepare to form the first visible light sensor, in the first surface shape of first visible light sensor
Into primary scintillator layer, then secondary fluor layer is formed in the second surface of first visible light sensor.The present invention's
Photodetection structure and preparation method thereof adds the definition of image under high-energy ray by the design of double-deck scintillator, together
When, the thickness of individual layer scintillator is less than the thickness of scintillator in the prior art, can effectively shorten the path of escaping from of visible ray, reduce
By uptake, conversion efficiency is improved.So the present invention effectively overcomes various shortcoming of the prior art and has high industrial profit
With value.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.It is any ripe
Know the personage of this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (12)
1. a kind of photodetection structure, it is characterised in that the photodetection structure comprises at least：
Primary scintillator layer, the X ray relatively low for absorbing energy, and X ray is converted into visible ray；
Secondary fluor layer, the X ray higher for absorbing energy, and X ray is converted into visible ray；
First visible light sensor, between the primary scintillator layer and the secondary fluor layer, for will transmit through
State the visible ray of primary scintillator layer and the visible ray of secondary fluor layer reflection is converted to electric charge, and be stored in described the
In one visible light sensor.
2. photodetection structure according to claim 1, it is characterised in that：The primary scintillator layer and second sudden strain of a muscle
The material of bright body layer is cesium iodide or gadolinium oxysulfide.
3. photodetection structure according to claim 1, it is characterised in that：First visible light sensor includes base
Plate and with two-dimensional array in multiple pixel cells on the substrate；Each pixel cell includes thin film transistor (TFT) and PIN light
Electric diode；The top electrode and hearth electrode of the substrate and the PIN photodiode are transparent or semitransparent material.
4. photodetection structure according to claim 3, it is characterised in that：The thin film transistor (TFT) and the PIN photoelectricity
Diode non-overlapping setting on the incident vertical plane of X ray.
5. photodetection structure according to claim 3, it is characterised in that：The thickness of the substrate be set as 15um~
50um。
6. photodetection structure according to claim 3, it is characterised in that：The substrate is optical fiber guide plate, the optical fiber
Multiple fibre-optic catheters perpendicular to surface are provided with guide plate.
7. photodetection structure according to claim 3, it is characterised in that：The substrate is that density is not more than 3g/cm3's
Material.
8. photodetection structure according to claim 7, it is characterised in that：The material of the substrate is polyimides, modeling
Material, silicon.
9. photodetection structure according to claim 1, it is characterised in that：The photodetection structure also includes being located at institute
The second visible light sensor of secondary fluor layer lower floor is stated, the visible ray for will transmit through the secondary fluor layer is converted to
Electric charge, and be stored in second visible light sensor.
A kind of 10. preparation method of photodetection structure as described in claim 1~9, it is characterised in that the preparation method
Comprise at least：
One substrate is provided, each material layer is successively prepared on the substrate to form the first visible light sensor, described first
The first surface of visible light sensor forms primary scintillator layer, then in the second surface shape of first visible light sensor
Into secondary fluor layer.
11. preparation method according to claim 10, it is characterised in that：The primary scintillator layer and second flicker
Body layer invests the surface of first visible light sensor by optical coupled sticker.
12. preparation method according to claim 10, it is characterised in that：The primary scintillator layer and second flicker
Body layer is formed by way of plated film.
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