CN107770890A - 节电型加热器 - Google Patents

节电型加热器 Download PDF

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Publication number
CN107770890A
CN107770890A CN201711033243.5A CN201711033243A CN107770890A CN 107770890 A CN107770890 A CN 107770890A CN 201711033243 A CN201711033243 A CN 201711033243A CN 107770890 A CN107770890 A CN 107770890A
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CN
China
Prior art keywords
heater
coil
radius
electricity
lower coil
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Pending
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CN201711033243.5A
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English (en)
Inventor
施小红
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Yangzhong Huifeng Packing Co Ltd
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Yangzhong Huifeng Packing Co Ltd
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Publication date
Application filed by Yangzhong Huifeng Packing Co Ltd filed Critical Yangzhong Huifeng Packing Co Ltd
Priority to CN201711033243.5A priority Critical patent/CN107770890A/zh
Publication of CN107770890A publication Critical patent/CN107770890A/zh
Pending legal-status Critical Current

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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00Heating by electric, magnetic or electromagnetic fields
    • H05B6/02Induction heating
    • H05B6/36Coil arrangements
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Resistance Heating (AREA)

Abstract

本发明公开了一种节电型加热器,包括加热器、下线圈和上线圈,其特征在于,所述下线圈和上线圈都安装在加热器内,所述上线圈直角拐角处圆角半径为4mm,上线圈底部距离加热器槽底为110mm,所述加热器高585mm,所述下线圈底部拐角半径为24mm,中间拐角半径为20mm,顶部拐角半径为4mm,下线圈顶部低于加热器顶部50mm,所述加热器底部中心位置中心孔,所述加热器中心孔外侧有4个圆柱孔。本发明结构简单、耗电量低且电能损失小。

Description

节电型加热器
技术领域
本发明涉及太阳能光伏技术领域,尤其涉及一种节电型加热器。
背景技术
目前生产单晶硅棒中,加热器是必须要使用的一种石墨件,目前投料在95-100公斤,等晶功率普遍在75kw-88kw左右,每炉电费占成本的50%,电能的利用率低下,有相当部分白白流失。
发明内容
根据以上不足,本发明提供一种结构简单、耗电量低且利用率高的节电型加热器。
为实现上述目的,本发明节电型加热器,主要内容为:包括加热器、下线圈和上线圈,其特征在于,所述下线圈和上线圈都安装在加热器内,所述上线圈直角拐角处圆角半径为4mm,上线圈底部距离加热器槽底为110mm,所述加热器高585mm,所述下线圈底部拐角半径为24mm,中间拐角半径为20mm,顶部拐角半径为4mm,下线圈顶部低于加热器顶部50mm,所述加热器底部中心位置中心孔,所述加热器中心孔外侧有4个圆柱孔。
本发明有益的效果是:结构简单、耗电量低且电能损失小。
附图说明
图1为本发明结构示意图。
附图标记说明:
1-加热器,2-下线圈,3-上线圈,101-圆柱孔,102-中心孔。
具体实施方式
下面结合附图及实施例描述本发明具体实施方式:
该***主要内容为:包括加热器1、下线圈2和上线圈3,其特征在于,所述下线圈2和上线圈3都安装在加热器1内,所述上线圈3直角拐角处圆角半径为4mm,上线圈3底部距离加热器1槽底为110mm,所述加热器1高585mm,所述下线圈2底部拐角半径为24mm,中间拐角半径为20mm,顶部拐角半径为4mm,下线圈2顶部低于加热器1顶部50mm,所述加热器1底部中心位置中心孔102,所述加热器1中心孔102外侧有4个圆柱孔101。
所述中心孔102直径为φ330mm,所述圆柱孔101直径为φ41mm。。
上面结合附图对本发明优选实施方式作了详细说明,但是本发明不限于上述实施方式,在本领域普通技术人员所具备的知识范围内,还可以在不脱离本发明宗旨的前提下做出各种变化。
不脱离本发明的构思和范围可以做出许多其他改变和改型。应当理解,本发明不限于特定的实施方式,本发明的范围由所附权利要求限定。

Claims (3)

1.节电型加热器,包括加热器(1)、下线圈(2)和上线圈(3),其特征在于,所述下线圈(2)和上线圈(3)都安装在加热器(1)内,所述上线圈(3)直角拐角处圆角半径为4mm,上线圈(3)底部距离加热器(1)槽底为110mm,所述加热器(1)高585mm,所述下线圈(2)底部拐角半径为24mm,中间拐角半径为20mm,顶部拐角半径为4mm,下线圈(2)顶部低于加热器(1)顶部50mm,所述加热器(1)底部中心位置中心孔(102),所述加热器(1)中心孔(102)外侧有4个圆柱孔(101)。
2.如权利要求1所述的节电型加热器,其特征在于:所述中心孔(102)直径为φ330mm。
3.如权利要求1所述的节电型加热器,其特征在于:所述圆柱孔(101)直径为φ41mm。
CN201711033243.5A 2017-10-30 2017-10-30 节电型加热器 Pending CN107770890A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201711033243.5A CN107770890A (zh) 2017-10-30 2017-10-30 节电型加热器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201711033243.5A CN107770890A (zh) 2017-10-30 2017-10-30 节电型加热器

Publications (1)

Publication Number Publication Date
CN107770890A true CN107770890A (zh) 2018-03-06

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Family Applications (1)

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CN (1) CN107770890A (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116134615A (zh) * 2020-07-28 2023-05-16 高通股份有限公司 包括具有高分辨率矩形截面互连件的衬底的封装件

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201063884Y (zh) * 2007-07-04 2008-05-21 北京有色金属研究总院 一种用于直拉硅单晶炉热场的主发热体
CN201106071Y (zh) * 2007-09-20 2008-08-27 西安理工大学 单晶炉勾形电磁场装置
CN103255472A (zh) * 2013-04-25 2013-08-21 浙江晶盛机电股份有限公司 具有双电源加热的区熔炉热场及保温方法
CN105696079A (zh) * 2016-04-19 2016-06-22 北京世纪金光半导体有限公司 一种精密控制6英寸碳化硅单晶生长温场的方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201063884Y (zh) * 2007-07-04 2008-05-21 北京有色金属研究总院 一种用于直拉硅单晶炉热场的主发热体
CN201106071Y (zh) * 2007-09-20 2008-08-27 西安理工大学 单晶炉勾形电磁场装置
CN103255472A (zh) * 2013-04-25 2013-08-21 浙江晶盛机电股份有限公司 具有双电源加热的区熔炉热场及保温方法
CN105696079A (zh) * 2016-04-19 2016-06-22 北京世纪金光半导体有限公司 一种精密控制6英寸碳化硅单晶生长温场的方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116134615A (zh) * 2020-07-28 2023-05-16 高通股份有限公司 包括具有高分辨率矩形截面互连件的衬底的封装件
CN116134615B (zh) * 2020-07-28 2024-03-22 高通股份有限公司 包括具有高分辨率矩形截面互连件的衬底的封装件

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Application publication date: 20180306