CN107768516A - Y Sb Te phase-change materials, phase-changing memory unit and preparation method thereof - Google Patents
Y Sb Te phase-change materials, phase-changing memory unit and preparation method thereof Download PDFInfo
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- CN107768516A CN107768516A CN201610703307.7A CN201610703307A CN107768516A CN 107768516 A CN107768516 A CN 107768516A CN 201610703307 A CN201610703307 A CN 201610703307A CN 107768516 A CN107768516 A CN 107768516A
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- 239000012782 phase change material Substances 0.000 title claims abstract description 121
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- 239000000126 substance Substances 0.000 claims abstract description 128
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 23
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 21
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 19
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 10
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims abstract description 5
- 150000001875 compounds Chemical class 0.000 claims abstract description 5
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims abstract description 5
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000000956 alloy Substances 0.000 claims description 46
- 229910045601 alloy Inorganic materials 0.000 claims description 46
- 229910017629 Sb2Te3 Inorganic materials 0.000 claims description 44
- 238000004544 sputter deposition Methods 0.000 claims description 44
- 239000000463 material Substances 0.000 claims description 23
- 230000008859 change Effects 0.000 claims description 10
- 238000006243 chemical reaction Methods 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 238000004549 pulsed laser deposition Methods 0.000 claims description 3
- 238000012423 maintenance Methods 0.000 claims 1
- 238000003860 storage Methods 0.000 abstract description 23
- 230000007704 transition Effects 0.000 abstract description 19
- 238000002425 crystallisation Methods 0.000 abstract description 17
- 230000008025 crystallization Effects 0.000 abstract description 16
- 230000002441 reversible effect Effects 0.000 abstract description 9
- 230000000694 effects Effects 0.000 abstract description 8
- 230000009466 transformation Effects 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 description 16
- 239000010408 film Substances 0.000 description 14
- 239000010409 thin film Substances 0.000 description 13
- 238000005516 engineering process Methods 0.000 description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000011160 research Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000010348 incorporation Methods 0.000 description 5
- 238000012360 testing method Methods 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 239000012300 argon atmosphere Substances 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 230000004069 differentiation Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000011065 in-situ storage Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000000427 thin-film deposition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- KRQUFUKTQHISJB-YYADALCUSA-N 2-[(E)-N-[2-(4-chlorophenoxy)propoxy]-C-propylcarbonimidoyl]-3-hydroxy-5-(thian-3-yl)cyclohex-2-en-1-one Chemical compound CCC\C(=N/OCC(C)OC1=CC=C(Cl)C=C1)C1=C(O)CC(CC1=O)C1CCCSC1 KRQUFUKTQHISJB-YYADALCUSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910005900 GeTe Inorganic materials 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 235000011868 grain product Nutrition 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000011232 storage material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
Abstract
The present invention provides a kind of Y Sb Te phase-change materials, phase-changing memory unit and preparation method thereof, and the Y Sb Te phase-change materials are to include yttrium, the compound of three kinds of elements of antimony and tellurium, and the chemical formula of the Y Sb Te phase-change materials is Y100‑x‑ySbxTey, wherein 0<100‑x‑y<50,0.1≤x/y≤4.The Y-Sb-Te series phase-change materials for phase transition storage of the present invention have faster crystallization rate and higher deposited stability, it can realize reversible transition under electric pulse effect, there is point of resistance height difference before and after phase transformation, difference is larger, " 0 ", " 1 " can be told, it is a kind of preferable phase-change material, available for preparing phase-changing memory unit.The Y-Sb-Te series phase-change material can use a variety of methods to prepare, and wherein magnetron sputtering method is more flexible, and the Y that component is adjustable, quality is higher can conveniently be made100‑x‑ySbxTeyLaminated film.
Description
Technical field
The present invention relates to technical field of semiconductor material preparation, is deposited more particularly to a kind of Y-Sb-Te phase-change materials, phase transformation
Storage unit and preparation method thereof.
Background technology
Memory is the important component of current semi-conductor market, is the foundation stone of information technology, no matter is gone back in life
It is to be played an important role in national economy.At present, the storage product of memory mainly has：Flash memory, disk, dynamic memory
Other non-volatile technologies such as device, static memory：Ferroelectric RAM, magnetic ram, CNT RAM, resistance-type RAM, copper RAM
(CopperBridge), Hologram Storage, single electron storage, molecular recording, polymer storage, racing track storage
(RacetrackMemory), detection storage (ProbeMemory) etc. also receives extensively as the candidate of memory of future generation
Research.The each have their own characteristic of these technologies, but it is mostly a wide range of real also in theoretical research or orientation test stage, distance
With also very remote.And phase transition storage has walked out laboratory at present, market has been moved towards.Shipment Omneo is announced after Numonyx
After serial phase change memory chip, Samsung is also announced to be proposed first multi-chip package 512Mbit phase change memory grain products.At present
To the NOR-type flash memory being contemplated to be in substitution consumer electronics field of phase transition storage.
The general principle of phase transition storage is that middle storage material is reversible between high resistance and low resistance during utilizing
Become to realize the storage of " 1 " and " 0 ".Controlled by using electric signal and realize that the storage high-resistance consecutive variations of material can be realized
Multistage storage, so as to greatly improve the information storage capability of memory.In phase transition storage, phase-change material is make use of in amorphous
Reversible transition between polycrystalline realizes above-mentioned resistance variations.
In phase-change material research and development, conventional has Ge2Sb2Te5、Sb2Te3With GeTe etc., wherein SbxTeyWith phase speed change
Degree is fast, it is low in energy consumption the advantages that.But the crystallization temperature of this material is low, data retention is poor, and height resistance value ratio is small.Therefore in order to
Its heat endurance is improved, improves data retention and improves height resistance value ratio, it is common practice to introduce appropriate doping.
The content of the invention
In view of the above the shortcomings that prior art, it is an object of the invention to provide a kind of Y-Sb-Te phase-change materials, phase
Transition storage unit and preparation method thereof, for solving Sb in the prior artxTeyCrystallization temperature existing for phase-change material is low, data
The problems such as holding capacity is poor, height resistance value ratio is small.
To achieve these goals and other related objectives, the present invention provide a kind of Y-Sb-Te phase-change materials, the Y-
Sb-Te phase-change materials are to include yttrium, the compound of three kinds of elements of antimony and tellurium, and the chemical formula of the Y-Sb-Te phase-change materials is
Y100-x-ySbxTey, wherein 0<100-x-y<50,0.1≤x/y≤4.
As a kind of preferred scheme of the Y-Sb-Te phase-change materials of the present invention, in the Y-Sb-Te phase-change materials, 1.6≤
x/y≤4。
As a kind of preferred scheme of the Y-Sb-Te phase-change materials of the present invention, in the Y-Sb-Te phase-change materials, 20≤x
≤80,10≤y≤65。
As a kind of preferred scheme of the Y-Sb-Te phase-change materials of the present invention, the Y-Sb-Te phase-change materials are Y-Sb-
Te phase change film materials, the thickness of the Y-Sb-Te phase-change materials is 1nm~300nm.
As a kind of preferred scheme of the Y-Sb-Te phase-change materials of the present invention, the Y-Sb-Te phase-change materials are in electric signal
The lower conversion repeatedly that can realize high low resistance of operation, and maintain resistance constant when no electric signal operates.
The present invention also provides a kind of phase-changing memory unit, and the phase-changing memory unit includes institute in any of the above-described scheme
The Y-Sb-Te phase-change materials stated.
The present invention also provides a kind of preparation method of the Y-Sb-Te phase-change materials described in scheme any as described above, root
According to chemical general formula Y100-x-ySbxTeyMiddle Y, Sb and Te different ratio, using magnetron sputtering method, pulsed laser deposition or electronics
Beam evaporation method prepares the Y-Sb-Te phase-change materials described in either a program as described above.
As a kind of preferred scheme of the preparation method of the Y-Sb-Te phase-change materials of the present invention, using Sb2Te3Alloys target and
The target co-sputtering of Y simple substance target two or using Sb2Te3Alloys target, Sb simple substance target and the target co-sputtering of Y simple substance target three or using Sb2Te3
Alloys target, Te simple substance target and the target co-sputtering of Y simple substance target three use Sb simple substance target, Te simple substance target and the target co-sputtering of Y simple substance target three
Mode prepare the Y-Sb-Te phase-change materials.
As a kind of preferred scheme of the Y-Sb-Te phase-change materials of the present invention, using Sb2Te3Alloys target and Y simple substance target two
When the mode of target co-sputtering prepares the Y-Sb-Te phase-change materials, the Sb2Te3Alloys target uses dc source, the Y simple substance
Target uses radio-frequency power supply, and Y atomic percent is adjusted by changing radio-frequency power, obtains the adjustable Y of Y components100-x-ySbxTey
Serial phase-change material；The Sb2Te3The dc power that alloys target uses is 10W~30W, the radio frequency work(of the Y simple substance target use
Rate is 10W~100W.
As a kind of preferred scheme of the preparation method of the Y-Sb-Te phase-change materials of the present invention, using Sb2Te3Alloys target,
When the mode of Sb simple substance target and the target co-sputtering of Y simple substance target three prepares the Y-Sb-Te phase-change materials, the Sb2Te3Alloys target and
The Sb simple substance target uses dc source, and the Y simple substance target uses radio-frequency power supply, Y original is adjusted by changing radio-frequency power
Sub- percentage, Sb, Te component ratio are adjusted by changing the dc power of the Sb simple substance target, it is adjustable to obtain Y components
Y100-x-ySbxTeySerial phase-change material；The Sb2Te3The dc power that the alloys target level Sb simple substance target uses for 10W~
30W, the radio-frequency power that the Y simple substance target uses is 10W~100W.
As a kind of preferred scheme of the preparation method of the Y-Sb-Te phase-change materials of the present invention, using Sb2Te3Alloys target,
When the mode of Te simple substance target and the target co-sputtering of Y simple substance target three prepares the Y-Sb-Te phase-change materials, the Sb2Te3Alloys target and
Te simple substance target uses dc source, and the Y simple substance target uses radio-frequency power supply, and Y atom hundred is adjusted by changing radio-frequency power
Divide ratio, adjust Sb, Te and Y component ratio by changing the dc power of Te simple substance targets, obtain the adjustable Y of Y components100-x- ySbxTeySerial phase-change material；The Sb2Te3The dc power that alloys target and the Te simple substance target use is described for 10W~30W
The radio-frequency power that Y simple substance targets use is 10W~100W.
It is mono- using Sb simple substance target, Te as a kind of preferred scheme of the preparation method of the Y-Sb-Te phase-change materials of the present invention
When the mode of matter target and the target co-sputtering of Y simple substance target three prepares the Y-Sb-Te phase-change materials, the Sb simple substance target and the Te are mono-
Matter target uses dc source, and the Y simple substance target uses radio-frequency power supply, Y atomic percent is adjusted by changing radio-frequency power,
Sb, Te and Y component ratio are adjusted by changing the dc power of the Sb simple substance target and the Te simple substance target, obtains Y components
Adjustable Y100-x-ySbxTeySerial phase-change material；The dc power scope that Sb simple substance target and Te the simple substance target uses be 10W~
30W, the radio frequency power range that the Y simple substance target uses is 10W~100W.
Y-Sb-Te phase-change materials, the phase-changing memory unit and preparation method thereof of the present invention has the advantages that：This
The Y-Sb-Te series phase-change materials for phase transition storage of invention have faster crystallization rate and higher deposited stable
Property, it can realize reversible transition under electric pulse effect, there is point of resistance height difference before and after phase transformation, and difference is larger, can be with
" 0 ", " 1 " are told, is a kind of preferable phase-change material, available for preparing phase-changing memory unit.The Y-Sb-Te series phase
Becoming material can use a variety of methods to prepare, and wherein magnetron sputtering method is more flexible, can conveniently be made that component is adjustable, quality is higher
Y100-x-ySbxTeyLaminated film.
Brief description of the drawings
Fig. 1 is shown as Sb2Te3With the Y provided in the embodiment of the present invention one100-x-ySbxTey(x/y=2/3) phase-change material
Resistance variation with temperature relation curve.
Fig. 2 is shown as Sb2Te3With the Y provided in the embodiment of the present invention one100-x-ySbxTey(x/y=2/3) phase-change material
Resistance descending slope varies with temperature relation curve.
Embodiment
Illustrate embodiments of the present invention below by way of specific instantiation, those skilled in the art can be by this specification
Disclosed content understands other advantages and effect of the present invention easily.The present invention can also pass through specific realities different in addition
The mode of applying is embodied or practiced, the various details in this specification can also be based on different viewpoints with application, without departing from
Various modifications or alterations are carried out under the spirit of the present invention.
Fig. 1 to Fig. 2 is referred to, it is necessary to illustrate, the diagram provided in the present embodiment only illustrates this in a schematic way
The basic conception of invention, though only showing the component relevant with the present invention in diagram rather than according to package count during actual implement
Mesh, shape and size are drawn, and kenel, quantity and the ratio of each component can be a kind of random change during its actual implementation, and its
Assembly layout kenel may also be increasingly complex.
The present invention provides a kind of Y-Sb-Te phase-change materials, and the Y-Sb-Te phase-change materials are to include three kinds of yttrium, antimony and tellurium
The compound of element, the chemical formula of the Y-Sb-Te phase-change materials is Y100-x-ySbxTey, wherein 0<100-x-y<50,0.1<x/
y<4.The present invention is by SbxTeyY is adulterated in phase-change material, because Y and Te formation can be very small, Y tends to substitute Sb former
Son forms Y with Te atoms2Te3, Y2Te3With Sb2Te3Lattice mismatch it is very small, less lattice mismatch will avoid going out for split-phase
Existing, this will be helpful to the stability for improving device；And the crystalline resistance of material significantly improves after Y incorporations, and this will be helpful to drop
The RESET power consumptions of low device.
As an example, in the Y-Sb-Te phase-change materials, x/y=2/3.
As an example, in the Y-Sb-Te phase-change materials, 1.6≤x/y≤4, in one example, x/y=2/1.
As an example, in the Y-Sb-Te phase-change materials, 20≤x≤80,10≤y≤65.
As an example, the Y-Sb-Te phase-change materials are Y-Sb-Te phase change film materials, the Y-Sb-Te phase-change materials
Thickness be 1nm~300nm.
As an example, the Y-Sb-Te phase-change materials can realize the conversion repeatedly of high low resistance under electric signal operation,
And maintain resistance constant when no electric signal operates.
The present invention also provides a kind of phase-changing memory unit, and the phase-changing memory unit includes institute in any of the above-described scheme
The Y-Sb-Te phase-change materials stated.
The present invention also provides a kind of preparation method of the Y-Sb-Te phase-change materials described in scheme any as described above, root
According to chemical general formula Y100-x-ySbxTeyMiddle Y, Sb and Te different ratio, using magnetron sputtering method, pulsed laser deposition or electronics
Beam evaporation method prepares the Y-Sb-Te phase-change materials described in any one as described above, wherein, magnetron sputtering method is more flexible, Ke Yifang
Just the Y that component is adjustable, quality is higher is made100-x-ySbxTeyPhase-change material.
As an example, using Sb2Te3Alloys target and the target co-sputtering of Y simple substance target two or using Sb2Te3Alloys target, Sb simple substance
Target and the target co-sputtering of Y simple substance target three or using Sb2Te3Alloys target, Te simple substance target and the target co-sputtering of Y simple substance target three or using Sb
The mode of simple substance target, Te simple substance target and the target co-sputtering of Y simple substance target three prepares the Y-Sb-Te phase-change materials.Below, with reference to specific
The preparation method of the Y-Sb-Te phase-change materials is specifically addressed embodiment.
Embodiment one
The present embodiment is by preparing Y100-x-ySbxTey(x/y=2/3) phase-change material, and it is tested and come further
Illustrate a kind of technical scheme of the present invention.Specific solution is as follows：
Prepared simultaneously on the silicon substrate after silicon substrate and thermal oxide using the double target co-sputtering method in magnetron sputtering
Y100-x-ySbxTeyPhase-change material, wherein 0<100-x-y<50,0.5≤x/y≤4.The Y-Sb-Te series phase-change materials prepared
, can be by plastics thickness control in 100nm~250nm by adjusting the long film time for thin-film material.
Specifically, comprise the following steps：Under an argon atmosphere, Sb is utilized2Te3Alloys target and the target co-sputtering of Y simple substance target two,
Wherein, Sb2Te3Alloys target uses dc source, and Y simple substance target uses radio-frequency power supply；Y original is adjusted by changing radio-frequency power
Sub- percentage, obtain the adjustable Y-Sb-Te series phase-change material of Y components.As a result of Sb2Te3Alloys target, therefore described
Y100-x-ySbxTeyIn, meet x/y=2/3, that is, it is Y that chemical formula, which is prepared,100-x-ySbxTey(x/y=2/3) phase-change material.
In the present embodiment, Y component is preferably 0.5<100-x-y<8.
Further, Sb is utilized2Te3When alloys target and Y simple substance two target co-sputterings of target, the Sb2Te3What alloys target used
Dc power scope is 10W~30W, and the radio frequency power range that the Y simple substance target uses is 20W~100W, background vacuum and
Ar pressure during sputtering can be adjusted according to being actually needed.As an example, this example is selected thin film deposition in substrate
SiO2.By substrate Si O2It is cleaned by ultrasonic respectively by acetone, alcohol and deionized water.The preparation of film sample is using high-purity Y
Simple substance target and Sb2Te3The target co-sputtering of alloys target two, in sputter procedure, base vacuum is better than 2 × 10-4Pa, the height as aura source
Pure argon flow set is 100sccm (standard milliliters/minute), and sputtering pressure 0.4Pa, sample stage temperature is room temperature, sputtering
During lead to recirculated cooling water sputtering target material is cooled down.High-purity Y simple substance target is sputtered using radio-frequency power 20W, Sb2Te3
Alloys target is sputtered using dc power 15W, sputtering duration 15 minutes.
Further, thickness is observed fresh section by field emission scanning electron microscope and obtained, and this example measures deposited thin
Film section average thickness is 100nm.The original that the square resistance of film is independently built by Shanghai micro-system and information technology research institute
Position resistance measuring system obtains.Heating rate is set to 10 DEG C/min, by resistance v. temperature (R-T) test, can obtain phase transformation
Material Y100-x-ySbxTey(x/y=2/3) crystallization temperature (Tc), as shown in Figure 1.To measured resistance v. temperature (R-T) relation
It is further processed, resistance R is taken the logarithm to obtain log (R), then makees once differentiation curves of the log (R) to temperature T, obtains
The crystallization temperature T of materialcAbout 193 DEG C, as shown in Figure 2.
In the present embodiment, Sb is utilized2Te3Alloys target and the target co-sputtering of Y simple substance target two have been prepared Sb, Te component and have compared x/y
=2/3 Y100-x-ySbxTey(x/y=2/3) complex thin film, in the Y100-x-ySbxTey(x/y=2/3) in, due to Y and
Te formation can be very small, so Y tends to substitute Sb atoms to form Y with Te atoms2Te3, Y2Te3With Sb2Te3Lattice mismatch
Very small, less lattice mismatch will avoid the appearance of split-phase, and this will be helpful to the stability for improving device；And after Y incorporations
The crystalline resistance of material significantly improves, and this will be helpful to the RESET power consumptions for reducing device.The Y100-x-ySbxTey(x/y=2/3)
Complex thin film, which is used for phase transition storage, can have preferable crystallization rate and higher deposited stability, and make in electric pulse
Reversible transition is realized under, is a kind of ideal phase-change material.
Embodiment two
The present embodiment is by preparing Y100-x-ySbxTey(x/y=2/1) phase-change material, and it is tested and come further
Illustrate a kind of technical scheme of the present invention.Specific solution is as follows：
Prepared simultaneously on the silicon substrate after silicon substrate and thermal oxide using three target co-sputtering methods in magnetron sputtering
Y100-x-ySbxTeyPhase-change material, wherein 0<100-x-y<50,0.5≤x/y≤4.The Y-Sb-Te series phase-change materials prepared
, can be by plastics thickness control in 100nm~250nm by adjusting the long film time for thin-film material.
Specifically, comprise the following steps：Under an argon atmosphere, Sb is utilized2Te3Alloys target, Sb simple substance target and Y simple substance target three
Target co-sputtering, wherein, Sb2Te3Alloys target uses dc source with Sb simple substance target, and Y simple substance target uses radio-frequency power supply；Pass through change
Radio-frequency power adjusts Y atomic percent, obtains the adjustable Y-Sb-Te series phase-change material of Y components.By adjusting direct current work(
Rate make it that Sb, Te component ratio are x/y=2/1.In the present embodiment, Y component is preferably 0.5<100-x-y<8.
Further, Sb is utilized2Te3When alloys target, Sb simple substance target and Y simple substance three target co-sputterings of target, the Sb2Te3Alloy
The dc power scope that target and Sb simple substance target use is 10W~30W, the radio frequency power range that the Y simple substance target uses be 20W~
Ar pressure when 100W, background vacuum and sputtering can be adjusted according to being actually needed.As an example, the selection of this example will
Thin film deposition is in substrate Si O2.By substrate Si O2It is cleaned by ultrasonic respectively by acetone, alcohol and deionized water.
Further, the In-situ resistance that the square resistance of film is independently built by Shanghai micro-system and information technology research institute
Measuring system obtains.Heating rate is set to 10 DEG C/min, by resistance v. temperature (R-T) test, can obtain phase-change material
Y100-x-ySbxTey(x/y=2/1) crystallization temperature (Tc).Measured resistance v. temperature (R-T) relation is further processed,
Resistance R is taken the logarithm to obtain log (R), then makees once differentiation curves of the log (R) to temperature T, obtains the crystallization temperature of material
Tc。
In the present embodiment, Sb is utilized2Te3Sb, Te has been prepared in alloys target, Sb simple substance target and the target co-sputtering of Y simple substance target three
Y of the component than x/y=2/1100-x-ySbxTey(x/y=2/1) complex thin film, in the Y100-x-ySbxTey(x/y=2/1)
In, because Y and Te formation can be very small, so Y tends to substitute Sb atoms to form Y with Te atoms2Te3, Y2Te3With Sb2Te3
Lattice mismatch it is very small, less lattice mismatch will avoid the appearance of split-phase, this will be helpful to improve device stability；And
And the crystalline resistance of material significantly improves after Y incorporations, this will be helpful to the RESET power consumptions for reducing device.The Y100-x-ySbxTey
(x/y=2/1) complex thin film, which is used for phase transition storage, can have preferable crystallization rate and higher deposited stability, and
Reversible transition is realized under electric pulse effect, is a kind of ideal phase-change material.
Embodiment three
The present embodiment is by preparing Y100-x-ySbxTey(x/y=1/2) phase-change material, and it is tested and come further
Illustrate a kind of technical scheme of the present invention.Specific solution is as follows：
Prepared simultaneously on the silicon substrate after silicon substrate and thermal oxide using three target co-sputtering methods in magnetron sputtering
Y100-x-ySbxTeyPhase-change material, wherein 0<100-x-y<50,0.5≤x/y≤4.The Y-Sb-Te series phase-change materials prepared
, can be by plastics thickness control in 100nm~250nm by adjusting the long film time for thin-film material.
Specifically, comprise the following steps：Under an argon atmosphere, Sb is utilized2Te3Alloys target, Te simple substance target and Y simple substance target three
Target co-sputtering, wherein, Sb2Te3Alloys target uses dc source with Te simple substance target, and Y simple substance target uses radio-frequency power supply；Pass through change
Radio-frequency power adjusts Y atomic percent, obtains the adjustable Y-Sb-Te series phase-change material of Y components.By adjusting direct current work(
Rate make it that Sb, Te component ratio are x/y=1/2.In the present embodiment, Y component is preferably 0.5<100-x-y<8.
Further, Sb is utilized2Te3When alloys target, Te simple substance target and Y simple substance three target co-sputterings of target, the Sb2Te3Alloy
The dc power scope that target and Sb simple substance target use is 10W~30W, the radio frequency power range that the Y simple substance target uses be 20W~
Ar pressure when 100W, background vacuum and sputtering can be adjusted according to being actually needed.As an example, the selection of this example will
Thin film deposition is in substrate Si O2.By substrate Si O2It is cleaned by ultrasonic respectively by acetone, alcohol and deionized water.
Further, the In-situ resistance that the square resistance of film is independently built by Shanghai micro-system and information technology research institute
Measuring system obtains.Heating rate is set to 10 DEG C/min, by resistance v. temperature (R-T) test, can obtain phase-change material
Y100-x-ySbxTey(x/y=1/2) crystallization temperature (Tc).Measured resistance v. temperature (R-T) relation is further processed,
Resistance R is taken the logarithm to obtain log (R), then makees once differentiation curves of the log (R) to temperature T, obtains the crystallization temperature of material
Tc。
In the present embodiment, Sb is utilized2Te3Sb, Te has been prepared in alloys target, Te simple substance target and the target co-sputtering of Y simple substance target three
Y of the component than x/y=1/2100-x-ySbxTey(x/y=1/2) complex thin film, in the Y100-x-ySbxTey(x/y=1/2)
In, because Y and Te formation can be very small, so Y tends to substitute Sb atoms to form Y with Te atoms2Te3, Y2Te3With Sb2Te3
Lattice mismatch it is very small, less lattice mismatch will avoid the appearance of split-phase, this will be helpful to improve device stability；And
And the crystalline resistance of material significantly improves after Y incorporations, this will be helpful to the RESET power consumptions for reducing device.The Y100-x-ySbxTey
(x/y=1/2) complex thin film, which is used for phase transition storage, can have preferable crystallization rate and higher deposited stability, and
Reversible transition is realized under electric pulse effect, is a kind of ideal phase-change material.
Example IV
The present embodiment is by preparing Y100-x-ySbxTey(x/y=4/1) phase-change material, and it is tested and come further
Illustrate a kind of technical scheme of the present invention.Specific solution is as follows：
Prepared simultaneously on the silicon substrate after silicon substrate and thermal oxide using three target co-sputtering methods in magnetron sputtering
Y100-x-ySbxTeyPhase-change material, wherein 0<100-x-y<50,0.5≤x/y≤4.The Y-Sb-Te series phase-change materials prepared
, can be by plastics thickness control in 100nm~250nm by adjusting the long film time for thin-film material.
Specifically, comprise the following steps：Under an argon atmosphere, it is total to using Sb simple substance target, Te simple substance target and the target of Y simple substance target three
Sputtering, wherein, Sb simple substance target uses dc source with Te simple substance target, and Y simple substance target uses radio-frequency power supply；By changing radio-frequency power
To adjust Y atomic percent, the adjustable Y-Sb-Te series phase-change material of Y components is obtained.By adjusting dc power
Sb, Te component ratio are x/y=4/1.In the present embodiment, Y component is preferably 0.5<100-x-y<8.
When further, using Sb simple substance target, Te simple substance target and Y simple substance three target co-sputterings of target, the Sb simple substance target and Te
The dc power scope that simple substance target uses is 10W~30W, and the radio frequency power range that the Y simple substance target uses is 20W~100W,
Ar pressure when background vacuum and sputtering can be adjusted according to being actually needed.As an example, this example is selected film
It is deposited on substrate Si O2.By substrate Si O2It is cleaned by ultrasonic respectively by acetone, alcohol and deionized water.
Further, the In-situ resistance that the square resistance of film is independently built by Shanghai micro-system and information technology research institute
Measuring system obtains.Heating rate is set to 10 DEG C/min, by resistance v. temperature (R-T) test, can obtain phase-change material
Y100-x-ySbxTey(x/y=4/1) crystallization temperature (Tc).Measured resistance v. temperature (R-T) relation is further processed,
Resistance R is taken the logarithm to obtain log (R), then makees once differentiation curves of the log (R) to temperature T, obtains the crystallization temperature of material
Tc。
In the present embodiment, Sb is utilized2Te3Sb, Te has been prepared in alloys target, Sb simple substance target and the target co-sputtering of Y simple substance target three
Y of the component than x/y=4/1100-x-ySbxTey(x/y=4/1) complex thin film, in the Y100-x-ySbxTey(x/y=4/1)
In, because Y and Te formation can be very small, so Y tends to substitute Sb atoms to form Y with Te atoms2Te3, Y2Te3With Sb2Te3
Lattice mismatch it is very small, less lattice mismatch will avoid the appearance of split-phase, this will be helpful to improve device stability；And
And the crystalline resistance of material significantly improves after Y incorporations, this will be helpful to the RESET power consumptions for reducing device.The Y100-x-ySbxTey
(x/y=4/1) complex thin film, which is used for phase transition storage, can have preferable crystallization rate and higher deposited stability, and
Reversible transition is realized under electric pulse effect, is a kind of ideal phase-change material.
In summary, the present invention provides a kind of Y-Sb-Te phase-change materials, phase-changing memory unit and preparation method thereof, institute
It is to include yttrium, the compound of three kinds of elements of antimony and tellurium, the chemical formula of the Y-Sb-Te phase-change materials to state Y-Sb-Te phase-change materials
For Y100-x-ySbxTey, wherein 0<100-x-y<50,0.1≤x/y≤4.The Y-Sb-Te systems for phase transition storage of the present invention
Row phase-change material has faster crystallization rate and higher deposited stability, and it can realize reversible under electric pulse effect
Phase transformation, there is point of resistance height difference before and after phase transformation, difference is larger, can tell " 0 ", " 1 ", is a kind of preferably phase transformation material
Material, available for preparing phase-changing memory unit.The Y-Sb-Te series phase-change material can use a variety of methods to prepare, wherein magnetic
Control sputtering method is more flexible, and the Y that component is adjustable, quality is higher can conveniently be made100-x-ySbxTeyLaminated film.
The above-described embodiments merely illustrate the principles and effects of the present invention, not for the limitation present invention.It is any ripe
Know the personage of this technology all can carry out modifications and changes under the spirit and scope without prejudice to the present invention to above-described embodiment.Cause
This, those of ordinary skill in the art is complete without departing from disclosed spirit and institute under technological thought such as
Into all equivalent modifications or change, should by the present invention claim be covered.
Claims (12)
1. a kind of Y-Sb-Te phase-change materials, it is characterised in that the Y-Sb-Te phase-change materials are to include three kinds of yttrium, antimony and tellurium members
The compound of element, the chemical formula of the Y-Sb-Te phase-change materials is Y100-x-ySbxTey, wherein 0<100-x-y<50,0.1≤x/y
≤4。
2. Y-Sb-Te phase-change materials according to claim 1, it is characterised in that：In the Y-Sb-Te phase-change materials, 1.6
≤x/y≤4。
3. Y-Sb-Te phase-change materials according to claim 1, it is characterised in that：In the Y-Sb-Te phase-change materials, 20
≤x≤80,10≤y≤65。
4. Y-Sb-Te phase-change materials according to claim 1, it is characterised in that：The Y-Sb-Te phase-change materials are Y-
Sb-Te phase change film materials, the thickness of the Y-Sb-Te phase-change materials is 1nm~300nm.
5. Y-Sb-Te phase-change materials according to claim 1, it is characterised in that：The Y-Sb-Te phase-change materials are in telecommunications
Number lower conversion repeatedly that can realize high low resistance of operation, and maintenance resistance is constant when no electric signal operate.
6. a kind of phase-changing memory unit, it is characterised in that the phase-changing memory unit is included as appointed in claim 1 to 5
Y-Sb-Te phase-change materials described in one.
A kind of 7. preparation method of Y-Sb-Te phase-change materials as any one of claim 1 to 5, it is characterised in that root
According to chemical general formula Y100-x-ySbxTeyMiddle Y, Sb and Te different ratio, using magnetron sputtering method, pulsed laser deposition or electronics
Beam evaporation method prepares the Y-Sb-Te phase-change materials as any one of claim 1 to 5.
8. the preparation method of Y-Sb-Te phase-change materials according to claim 7, it is characterised in that：Using Sb2Te3Alloys target
And the target co-sputtering of Y simple substance target two or using Sb2Te3Alloys target, Sb simple substance target and the target co-sputtering of Y simple substance target three use
Sb2Te3Alloys target, Te simple substance target and the target co-sputtering of Y simple substance target three use Sb simple substance target, Te simple substance target and the target of Y simple substance target three
The mode of cosputtering prepares the Y-Sb-Te phase-change materials.
9. the preparation method of Y-Sb-Te phase-change materials according to claim 8, it is characterised in that：Using Sb2Te3Alloys target
And the mode of the target co-sputtering of Y simple substance target two is when preparing the Y-Sb-Te phase-change materials, the Sb2Te3Alloys target uses direct current
Source, the Y simple substance target use radio-frequency power supply, adjust Y atomic percent by changing radio-frequency power, it is adjustable to obtain Y components
Y100-x-ySbxTeySerial phase-change material；The Sb2Te3The dc power that alloys target uses is 10W~30W, the Y simple substance target
The radio-frequency power used is 10W~100W.
10. the preparation method of Y-Sb-Te phase-change materials according to claim 8, it is characterised in that：Using Sb2Te3Alloy
When the mode of target, Sb simple substance target and the target co-sputtering of Y simple substance target three prepares the Y-Sb-Te phase-change materials, the Sb2Te3Alloys target
And the Sb simple substance target uses dc source, the Y simple substance target uses radio-frequency power supply, adjusts Y's by changing radio-frequency power
Atomic percent, Sb, Te component ratio are adjusted by changing the dc power of the Sb simple substance target, it is adjustable to obtain Y components
Y100-x-ySbxTeySerial phase-change material；The Sb2Te3The dc power that the alloys target level Sb simple substance target uses for 10W~
30W, the radio-frequency power that the Y simple substance target uses is 10W~100W.
11. the preparation method of Y-Sb-Te phase-change materials according to claim 8, it is characterised in that：Using Sb2Te3Alloy
When the mode of target, Te simple substance target and the target co-sputtering of Y simple substance target three prepares the Y-Sb-Te phase-change materials, the Sb2Te3Alloys target
And Te simple substance target uses dc source, the Y simple substance target uses radio-frequency power supply, Y atom is adjusted by changing radio-frequency power
Percentage, Sb, Te and Y component ratio are adjusted by changing the dc power of Te simple substance targets, obtains the adjustable Y of Y components100-x- ySbxTeySerial phase-change material；The Sb2Te3The dc power that alloys target and the Te simple substance target use is described for 10W~30W
The radio-frequency power that Y simple substance targets use is 10W~100W.
12. the preparation method of Y-Sb-Te phase-change materials according to claim 8, it is characterised in that：Using Sb simple substance target,
When the mode of Te simple substance target and the target co-sputtering of Y simple substance target three prepares the Y-Sb-Te phase-change materials, the Sb simple substance target and described
Te simple substance target uses dc source, and the Y simple substance target uses radio-frequency power supply, and Y atom hundred is adjusted by changing radio-frequency power
Divide ratio, adjust Sb, Te and Y component ratio by changing the dc power of the Sb simple substance target and the Te simple substance target, obtain Y
The adjustable Y of component100-x-ySbxTeySerial phase-change material；The dc power scope that Sb simple substance target and Te the simple substance target uses is
10W~30W, the radio frequency power range that the Y simple substance target uses is 10W~100W.
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