CN107768496B - A kind of LED flip chip, preparation method and LED wafer - Google Patents
A kind of LED flip chip, preparation method and LED wafer Download PDFInfo
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- CN107768496B CN107768496B CN201710895982.9A CN201710895982A CN107768496B CN 107768496 B CN107768496 B CN 107768496B CN 201710895982 A CN201710895982 A CN 201710895982A CN 107768496 B CN107768496 B CN 107768496B
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
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- Engineering & Computer Science (AREA)
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
This application provides a kind of LED flip chip, preparation method and LED wafers, wherein, the LED flip chip includes: substrate, the epitaxial structure being sequentially formed on the substrate and reflecting layer, the epitaxial structure includes the N-type layer being sequentially formed on the substrate, luminescent layer, P-type layer, the epitaxial structure includes the contact hole of multiple exposures N-type layer, and the reflecting layer exposure contact hole, the reflecting layer includes reflection electrode layer；The auxiliary electrode insulated from each other with the P-type layer is formed in the contact hole, the auxiliary electrode with the N electrode of the LED flip chip for being electrically connected；Wherein, the auxiliary electrode includes the first auxiliary electrode formed with the reflection electrode layer same layer.For the embodiment of the present application by the way that auxiliary electrode is arranged on contact hole, which includes the first auxiliary electrode formed with reflection electrode layer same layer, can be improved the reflection to light.
Description
Technical field
This application involves photoelectron technical fields, brilliant in particular to a kind of LED flip chip, preparation method and LED
Piece.
Background technique
The principle of luminosity of light emitting diode (LED) is the energy moved between n-type semiconductor and p-type semiconductor using electronics
Difference releases energy in the form of light, and such principle of luminosity is different from the principle of luminosity of incandescent lamp fever, therefore light emitting diode
Referred to as cold light source.In addition, light emitting diode has the advantages that durability is high, the service life is long, light and handy, power consumption is low etc., therefore now
Illumination market give great expectations to light emitting diode, be regarded as illuminations of new generation.In the prior art, foundation takes light side
Difference, LED chip can divide into positive cartridge chip and flip-chip, more preferably shine since flip-chip has compared to positive cartridge chip
Efficiency and heat dissipation effect, are greatly developed in recent years.
Currently, conventional flip-chip is as shown in Figure 1, reflecting layer is located on P-GaN (p-type gallium nitride), to handle from
The light of (multiple quantum well layer) area MQW outgoing is all transmitted from growth substrates, and echo area area in order to further increase, is being carved
Erosion area edge increases reflection circle band, can further improve reflecting effect, improves the external quantum efficiency of LED chip, still, such as schemes
Shown in 1, since N contact electrode is metal material, the extinction characteristic of itself will affect the reflection of light, and then influence outer quantum effect
Rate.
Summary of the invention
In view of this, the application's is designed to provide a kind of LED flip chip, preparation method and LED wafer, improve
The reflectivity of light in LED flip chip.
In a first aspect, the embodiment of the present application provides a kind of LED flip chip, including substrate, it is sequentially formed in the lining
Epitaxial structure and reflecting layer on bottom, the epitaxial structure include the N-type layer being sequentially formed on the substrate, luminescent layer, p-type
Layer,
The epitaxial structure includes the contact hole of multiple exposures N-type layer, the reflecting layer exposure contact hole, institute
Stating reflecting layer includes reflection electrode layer；
The auxiliary electrode insulated from each other with the P-type layer is formed in the contact hole, the auxiliary electrode is used for and institute
State the N electrode electrical connection of LED flip chip；Wherein, the auxiliary electrode includes the formed with the reflection electrode layer same layer
One auxiliary electrode.
With reference to first aspect, the embodiment of the present application provides the first possible embodiment of first aspect, described anti-
The barrier layer that layer further includes conductive energy is penetrated, the barrier layer is formed on the reflection electrode layer, the barrier layer
Cover the reflection electrode layer；
The auxiliary electrode further includes the second auxiliary electrode with barrier layer same layer setting, second auxiliary electrode
Cover first auxiliary electrode.
With reference to first aspect or the first possible embodiment of first aspect, the embodiment of the present application provide first
The possible embodiment of second of aspect, the LED flip chip further include the first insulating layer, and first insulating layer is formed
On the reflecting layer, first insulating layer covers side wall and the bottom of the contact hole, and the exposure auxiliary electrode
With the part reflecting layer except the auxiliary electrode.
The possible embodiment of second with reference to first aspect, the embodiment of the present application provide the third of first aspect
Possible embodiment, the LED flip chip further include contact electrode layer, and the contact electrode layer is formed in described first absolutely
On edge layer；
The contact electrode layer includes that the N-type contact electrode of the corresponding contact hole and p-type contact electrode, the N-type connect
Touched electrode and the auxiliary electrode connect, the part reflection except the p-type contact electrode and the auxiliary electrode
Layer connects；
The auxiliary electrode is used to contact electrode by the N-type and the N electrode of the LED flip chip is electrically connected
It connects.
The third possible embodiment with reference to first aspect, the embodiment of the present application provide the 4th kind of first aspect
Possible embodiment, the LED flip chip further include the second insulating layer being sequentially formed on the contact electrode layer
And electrode layer, the region of second insulating layer exposure each the N-type contact electrode and each p-type contact electrode；
The electrode layer includes P electrode and the N electrode, and the P electrode and p-type contact electrode connect, institute
It states N electrode and N-type contact electrode connects.
With reference to first aspect, the embodiment of the present application provides the 5th kind of possible embodiment of first aspect, and first is auxiliary
The inclination angle range for helping electrode is 20~70 degree.
With reference to first aspect or the 4th kind of possible embodiment of first aspect, the embodiment of the present application provide first party
The 6th kind of possible embodiment in face, the thickness range of first auxiliary electrode are 100~1000 nanometers.
Second aspect, the embodiment of the present application provide a kind of preparation method of LED flip chip structure, comprising:
Epitaxial structure is sequentially formed on substrate, makes the contact hole that multiple exposed N-type layers are formed on the epitaxial structure, institute
Stating epitaxial structure includes the N-type layer being sequentially formed on the substrate, luminescent layer and P-type layer；
Reflecting layer and the auxiliary electrode in the contact hole are formed on the epitaxial structure, make the auxiliary electrode
Insulated from each other with the P-type layer, the auxiliary electrode with the N electrode of the LED flip chip for being electrically connected；Wherein, described
Reflecting layer includes reflection electrode layer, and the auxiliary electrode includes the first auxiliary electrode, the auxiliary electrode and the reflecting electrode
Layer same layer is formed.
In conjunction with second aspect, the embodiment of the present application provides the first possible embodiment of second aspect, described anti-
The barrier layer that layer further includes electric conductivity is penetrated, the auxiliary electrode further includes the second auxiliary electricity with barrier layer same layer setting
Pole；
It is described that the reflecting layer and the auxiliary electrode in the contact hole are formed on the epitaxial structure, also
Include:
Form the barrier layer for covering the reflection electrode layer on the reflection electrode layer, and covering described the
Second auxiliary electrode of one auxiliary electrode.
In conjunction with the possible embodiment of the first of second aspect or second aspect, the embodiment of the present application provides second
The possible embodiment of second of aspect,
The first insulating layer is formed on the reflecting layer, make first insulating layer cover the contact hole side wall and
Bottom, and the part reflecting layer except the exposure auxiliary electrode and the auxiliary electrode.
In conjunction with second of possible embodiment of second aspect, the embodiment of the present application provides the third of second aspect
Possible embodiment,
Contact electrode layer is formed on first insulating layer, the contact electrode layer includes the corresponding contact hole
N-type contacts electrode and p-type contacts electrode, so that N-type contact electrode and the auxiliary electrode connect, the p-type is connect
The part reflecting layer except touched electrode and the auxiliary electrode connects.
In conjunction with the third possible embodiment of second aspect, the embodiment of the present application provides the 4th kind of second aspect
Possible embodiment,
Second insulating layer is formed on the contact electrode layer, connects each N-type of the second insulating layer exposure
The region of touched electrode and each p-type contact electrode；
Electrode layer is set on the second insulating layer, and the electrode layer includes P electrode and the N electrode, makes the P
Electrode and p-type contact electrode connect, and the N electrode and N-type contact electrode connect.
The third aspect, the embodiment of the present application provide a kind of LED wafer, the 6th including first aspect to first aspect kind
Any LED flip chip in possible embodiment.
LED flip chip in the application includes substrate, epitaxial structure layer and the reflection being set in turn on the substrate
Layer, the epitaxial structure include the N-type layer being set in turn on the substrate, luminescent layer, P-type layer, compared with prior art, sheet
The epitaxial structure of application includes the contact hole of multiple exposed N-type layers, and the auxiliary electricity insulated from each other with P-type layer is provided in contact hole
Pole, auxiliary electrode are electrically connected with N electrode；Wherein, auxiliary electrode includes the first auxiliary electrode with the setting of reflecting layer same layer.Due to
First auxiliary electrode and reflecting layer are same layer settings, and material and thickness are consistent with reflecting layer, improve to LED luminescent layer
The reflecting effect of the light of transmitting.
To enable the above objects, features, and advantages of the application to be clearer and more comprehensible, preferred embodiment is cited below particularly, and cooperate
Appended attached drawing, is described in detail below.
Detailed description of the invention
Technical solution in ord to more clearly illustrate embodiments of the present application, below will be to needed in the embodiment attached
Figure is briefly described, it should be understood that the following drawings illustrates only some embodiments of the application, therefore is not construed as pair
The restriction of range for those of ordinary skill in the art without creative efforts, can also be according to this
A little attached drawings obtain other relevant attached drawings.
Fig. 1 shows the first LED flip chip structural schematic diagram provided by the embodiment of the present application 1；
Fig. 2 a shows the thickness of the first auxiliary electrode and the corresponding relationship of reflectivity provided by the embodiment of the present application 1 and shows
It is intended to；
Fig. 2 b shows the thickness of the first auxiliary electrode provided by the embodiment of the present application 1 and closes with the corresponding of crash rate is removed
It is schematic diagram；
Fig. 3 shows the pass corresponding with reliability yield of the inclination angle of the first auxiliary electrode provided by the embodiment of the present application 1
It is schematic diagram；
Fig. 4 shows second of LED flip chip structural schematic diagram provided by the embodiment of the present application 1；
Fig. 5 shows the third LED flip chip structural schematic diagram provided by the embodiment of the present application 1；
Fig. 6 a show gap between the first auxiliary electrode and the second auxiliary electrode provided by the embodiment of the present application 1 with
Correspondence diagram between IR yield；
Fig. 6 b show gap between the first auxiliary electrode and the second auxiliary electrode provided by the embodiment of the present application 1 with
Export the correspondence diagram of brightness；
Fig. 7 a shows the thickness of the second auxiliary electrode and the corresponding relationship of IR yield provided by the embodiment of the present application 1 and shows
It is intended to；
Fig. 7 b shows the pass corresponding with spalling failure rate of the thickness of the second auxiliary electrode provided by the embodiment of the present application 1
It is schematic diagram；
Fig. 8 a shows the pass corresponding with reliability yield of the inclination angle of the second auxiliary electrode provided by the embodiment of the present application 1
It is schematic diagram；
Fig. 8 b shows the inclination angle of the second auxiliary electrode provided by the embodiment of the present application 1 and exports the corresponding relationship of brightness
Schematic diagram；
Fig. 9 shows the 4th kind of LED flip chip structural schematic diagram provided by the embodiment of the present application 1；
Figure 10 shows the 5th kind of LED flip chip structural schematic diagram provided by the embodiment of the present application 1；
Figure 11 shows the 6th kind of LED flip chip structural schematic diagram provided by the embodiment of the present application 1；
Figure 12 shows a kind of preparation method flow chart of LED flip chip provided by the embodiment of the present application 2；
Figure 13 shows one of the preparation process figure of the provided LED flip chip of the embodiment of the present application 2；
Figure 14 shows one of the preparation process figure of the provided LED flip chip of the embodiment of the present application 2；
Figure 15 shows one of the preparation process figure of the provided LED flip chip of the embodiment of the present application 2；
Figure 16 shows one of the preparation process figure of the provided LED flip chip of the embodiment of the present application 2；
Figure 17 shows one of the preparation process figures of the provided LED flip chip of the embodiment of the present application 2；
Figure 18 shows one of the preparation process figure of the provided LED flip chip of the embodiment of the present application 2
Figure 19 shows one of the preparation process figure of the provided LED flip chip of the embodiment of the present application 2
Figure 20 shows one of the preparation process figure of the provided LED flip chip of the embodiment of the present application 2；
Figure 21 shows one of the preparation process figure of the provided LED flip chip of the embodiment of the present application 2.
Icon: 101- substrate；102- epitaxial structure；The reflecting layer 103-；104- contact hole；105- auxiliary electrode；1031- is anti-
Penetrate electrode layer；The first auxiliary electrode of 1051-；The first insulating layer of 106-；The barrier layer 1032-；The second auxiliary electrode of 1052-；107-
Contact electrode layer；108- second insulating layer；109- electrode layer.
Specific embodiment
To keep the purposes, technical schemes and advantages of the embodiment of the present application clearer, below in conjunction with the embodiment of the present application
Middle attached drawing, the technical scheme in the embodiment of the application is clearly and completely described, it is clear that described embodiment is only
It is some embodiments of the present application, instead of all the embodiments.The application being usually described and illustrated herein in the accompanying drawings is real
The component for applying example can be arranged and be designed with a variety of different configurations.Therefore, below to the application's provided in the accompanying drawings
The detailed description of embodiment is not intended to limit claimed scope of the present application, but is merely representative of the selected reality of the application
Apply example.Based on embodiments herein, those skilled in the art institute obtained without making creative work
There are other embodiments, shall fall in the protection scope of this application.
Embodiment 1
The embodiment of the present application 1 provides a kind of LED flip chip, as shown in Figure 1, being the sectional drawing of LED flip chip, packet
Include substrate 101, the epitaxial structure being sequentially formed on substrate 101 102 and reflecting layer 103.
Epitaxial structure 102 includes N-type layer, luminescent layer and P-type layer (N-type layer, luminescent layer being set in turn on substrate 101
It is mark in figure with P-type layer).
Wherein, epitaxial structure 102 includes the contact hole 104 of multiple exposed N-type layers, the exposure of reflecting layer 103 contact hole, reflection
Layer 103 includes reflection electrode layer 1031.
The auxiliary electrode 105 insulated from each other with P-type layer is formed in contact hole 104, auxiliary electrode 105 with LED for falling
The N electrode of cartridge chip is electrically connected；Wherein, auxiliary electrode 105 includes the first auxiliary electricity formed with reflection 1031 same layer of motor layer
Pole 1051.
Wherein, substrate can be aluminium oxide Al2O3, silicon carbide SiC, silicon Si, gallium nitride GaN, GaAs GaAs or phosphatization
Gallium GaP etc..
The first auxiliary electrode 1051 that the reflection electrode layer 1031 and auxiliary electrode 105 that reflecting layer 103 includes include uses
Same layer paving mode so their slave production method, material composition are identical with thickness, and is required to have good anti-
The metal material of characteristic is penetrated, the material of such first auxiliary electrode 1051 also has the function of carrying out good reflection to light.
Preferably, reflection electrode layer 1031 and the first auxiliary electrode 1051 are multiple layer metal material, and the metal material of lower layer
Material requires good reflection characteristic, such as aluminium AL, silver Ag, platinum Pt or gold Au etc., and the metal material on upper layer requires
The metal material of good barrier properties metal material, such as platinum Pt, titanium Ti, tungsten W or nickel etc., such upper layer can be effective
Ground prevents the metal material of lower layer from spreading or migrating.
Wherein, the first auxiliary electrode 1051 is in up-narrow and down-wide cylindric, the thickness of first auxiliary electrode 1051 and anti-
It is related to penetrate rate, in Fig. 2 a it can be seen from the optional range of thickness be 100~1000nm, meanwhile, the first auxiliary electrode 1051 and stripping
It is also related to fall crash rate, can be by finding out in Fig. 2 b, after the thickness of the first auxiliary electrode 1051 is greater than 200nm, removing
Crash rate is higher, and in conjunction with Fig. 2 a and Fig. 2 b, the preferred thickness of the first auxiliary electrode 1051 is 100~200nm, more preferably
150nm。
Particularly, when the thickness of the first auxiliary electrode 1051 is partially thin, the first auxiliary electrode 1051 it can be seen from Fig. 2 a
Reflectivity it is poor, if the thickness of the first auxiliary electrode 1051 is blocked up, it can be seen from Fig. 2 b the first auxiliary electrode 1051 by
In being easier to get detached contact hole 104 by biggish stress.
The side wall of first auxiliary electrode 1051 and the bottom surface angle of contact hole are denoted as the inclination angle of the first auxiliary electrode 1051, by
It is found that the inclination angle of the first auxiliary electrode 1051 is related with reliability yield, excessive or too small inclination angle can all cause experimental data
Reliability yield is relatively low, as seen from Figure 3, the optional 20-70 degree in the inclination angle of the first auxiliary electrode 1051, preferably 30-55 degree, and more
Preferably 40 degree.
A kind of preferable embodiment, in the technical solution that the embodiment of the present application 1 proposes, as shown in figure 4, LED upside-down mounting
Chip further includes the first insulating layer 106, and the first insulating layer 106 is formed on reflecting layer 103, and the covering of the first insulating layer 106 connects
The side wall of contact hole 104 and bottom, and the partially reflecting layer except exposure auxiliary electrode 105 and auxiliary electrode 105.
In this embodiment preferably, the first insulating layer 106 can be located immediately at reflection electrode layer 1031 and first
On auxiliary electrode 1051, this structure needs accurate etching technique, i.e., in reflection electrode layer 1031 and the first auxiliary electrode
First insulating layer 106 is directly set on 1051.
Wherein, the first insulating layer 106 exposure auxiliary electrode 105 and auxiliary electrode 105 except partially reflecting layer be in order to
The channel contacted with the electrode of LED flip chip is provided to auxiliary electrode 105 and reflecting layer 103.
First insulating layer material requires good insulation characterisitic and reflection characteristic, for example can be silica
SiO2, silicon nitride SiN, titanium dioxide TiO2, tantalum oxide Ta2O5, one of magnesium fluoride MgF or a variety of composite materials.
Herein, the first insulating layer 106 is for covering the part that reflecting layer does not cover, therefore, it is also desirable to the first insulating layer
106 have good reflectance signature.
A kind of preferable embodiment, in the technical solution that the embodiment of the present application 1 proposes, as shown in figure 5, reflecting layer
103 further include the barrier layer 1032 of conductive energy, and barrier layer 1032 is formed on reflection electrode layer 1031, barrier layer
1032 covering reflection electrode layers 1031.
Auxiliary electrode further includes the second auxiliary electrode 1052 with the setting of barrier layer same layer, second auxiliary electrode 1052
Cover first auxiliary electrode 1051.
The second auxiliary electrode 1052 that the barrier layer 1032 and auxiliary electrode 105 that reflecting layer 103 includes include is using same layer
Paving mode, and it is required that the second auxiliary electrode 1052 the first auxiliary electrode 1051 of cladding completely.
Preferably, barrier layer 1032 and the second auxiliary electrode 1052 are multiple layer metal material, and the metal material of lower layer is wanted
It asks with good adhesiveness, and the second auxiliary electrode 1052 and N-type layer Ohmic contact, such as nickel, titanium Ti or chromium Cr etc., on
Layer metal material require good barrier properties metal material, such as platinum Pt, titanium Ti, tungsten W or nickel etc., in this way on
The metal material of layer can be effectively prevented the metal material diffusion or migration of lower layer.
Here, the second auxiliary electrode 1052 uses Ohmic contact rather than Schottky contacts with N-type layer, is because if being
Schottky contacts will lead to energy loss in contact area, be converted into heat, to affect the reliability of device.
In addition, the lower layer on barrier layer 1032 and the upper layer of reflection electrode layer 1031 directly contact, upper layer is exhausted by first
The P electrode of exposed region and LED flip chip that edge layer 106 provides connects, the lower layer of the second auxiliary electrode 1052 and first auxiliary
The upper layer of electrode 1051 is helped directly to contact, the exposed region and LED flip chip that upper layer is provided by first insulating layer 106
N electrode connection.
Particularly, the gap between the lower layer of the second auxiliary electrode 1052 and the upper layer of the first auxiliary electrode 1051 will affect
IR yield and light output, Fig. 6 a is between the gap and IR yield between the first auxiliary electrode 1051 and the second auxiliary electrode 1052
Correspondence diagram, by Fig. 6 a it is found that the gap between the first auxiliary electrode 1051 and the second auxiliary electrode 1052 is optional
For 4~15um, meanwhile, the output that the gap between the first auxiliary electrode 1051 and the second auxiliary electrode 1052 will affect light again is bright
Degree, as shown in Figure 6 b, comprehensively considers, and the gap preferably 5 between the first auxiliary electrode 1051 and the second auxiliary electrode 1052~
12um, more preferable 8um.
If gap is too small, the second auxiliary electrode 1052 may be unable to fully the first auxiliary electrode 1051 of cladding, influence
IR yield；If gap is excessive, the second auxiliary electrode 1052 can generate extinction, influence light output.
Second auxiliary electrode 1052 is up-narrow and down-wide cap-like structure, is the second auxiliary electrode 1052 as shown in Figure 7a
Correspondence diagram between thickness and the good degree of IR, it can be seen from Fig. 7 a the second auxiliary electrode 1052 it is optional with a thickness of
100~1000nm；Meanwhile second auxiliary electrode 1052 thickness again with removing crash rate it is related, as shown in Figure 7b, synthesis examine
Consider, the preferred thickness of the second auxiliary electrode is 300~800nm, more preferably 450nm.
Particularly, it for the second auxiliary electrode 1052, if thickness is partially thin, coats protectiveness and is affected, influence IR
Yield can generate excessive stresses if thickness is blocked up, cause the contact for disengaging it from the first auxiliary electrode 1051 or N-type layer
Hole.
It as shown in Figure 8 a, is the correspondence diagram at the inclination angle of the second auxiliary electrode 1052 and reliability yield, by scheming
In 8a as can be seen that optional 20~70 degree of the inclination angle of the second auxiliary electrode 1052, meanwhile, the inclination angle of the second auxiliary electrode 1052 is again
It is related with output brightness, it is learnt in conjunction with Fig. 8 b, preferably 30~50 degree, more preferable 40 degree of the inclination angle 20 of the second auxiliary electrode 1052.
If inclination angle is too small, reliability will affect, inclination angle is excessive, will affect light output brightness.
In the above-mentioned LED flip chip for having barrier layer 1032, as shown in figure 9, LED flip chip further includes the first insulation
Layer 106, the first insulating layer 106 is formed on the barrier layer 1032 in reflecting layer 103, and the first insulating layer 106 covers contact hole
104 side wall and bottom, and the partially reflecting layer except exposure auxiliary electrode 105 and auxiliary electrode 105.
Wherein, the first insulating layer 106 exposure auxiliary electrode 105 and auxiliary electrode 105 except partially reflecting layer be in order to
Barrier layer to the second auxiliary electrode 1052 in auxiliary electrode 105 and in reflecting layer 103 provides the electricity with LED flip chip
The channel of pole contact.
First insulating layer material requires good insulation characterisitic and reflection characteristic, for example can be silica
SiO2, silicon nitride SiN, titanium dioxide TiO2, tantalum oxide Ti2O5, one of magnesium fluoride MgF or a variety of composite materials.
A kind of preferable embodiment, in the technical solution that the embodiment of the present application 1 proposes, as shown in Figure 10, LED upside-down mounting
Chip further includes contact electrode layer 107, and contact electrode layer 107 is formed on the first insulating layer 106.
Contact electrode layer 107 includes that the N-type contact electrode of corresponding contact hole 104 and p-type contact electrode (do not identify in figure
N-type contacts electrode and p-type contacts electrode), N-type contacts electrode and auxiliary electrode connects, and p-type contacts electrode and auxiliary electrode
Partially reflecting layer 103 except 105 connects.
Auxiliary electrode is used to contact electrode by N-type and be electrically connected with the N electrode of LED flip chip.
Contact 107 material of electrode layer is metal material, and has good characteristics of electrical conductivity, for example can be golden Au, aluminium
Al, copper Cu, platinum Pt, titanium Ti or chromium Cr etc..
A kind of preferable embodiment, in the technical solution that the embodiment of the present application 1 proposes, as shown in figure 11, LED upside-down mounting
Chip further includes the second insulating layer 108 and electrode layer 109 being sequentially formed on contact electrode layer 107, and second insulating layer is sudden and violent
Reveal the region of each N-type contact electrode and each p-type contact electrode.
Electrode layer 109 includes P electrode and N electrode, and the P electrode and p-type contact electrode connect, the N electricity
Pole and N-type contact electrode connect.
Wherein, the region of the exposure of second insulating layer 108 each N-type contact electrode and each p-type contact electrode, be in order to
N-type contact electrode provides the on-off contacted with N electrode, and provides the channel contacted with P electrode to p-type contact electrode.
Wherein, the material requirements of second insulating layer 108 has good insulation characterisitic and reflection characteristic, for example can be two
Silicon oxide sio2, silicon nitride SiC, titanium dioxide TiO2, tantalum oxide Ta2O5, one of magnesium fluoride MgF or a variety of composite woods
Material.
In this application, the first insulating layer 106 also act as isolation reflecting layer 102 with and contact electrode effect；Second absolutely
Edge layer plays the role of isolation contact electrode and electrode layer.
Wherein, the material requirements of electrode layer 109 is the metal material with good electrical conduction characteristic, for example can be gold
Au, aluminium Al, copper Cu, platinum Pt, titanium Ti or chromium Cr etc..
Embodiment 2
The embodiment of the present application 2 provides a kind of preparation method of LED flip chip, and flow chart is as shown in figure 12, specifically
Process is as follows, sees step S701~S702:
S701: sequentially forming epitaxial structure on substrate, makes the contact hole that multiple exposed N-type layers are formed on epitaxial structure,
Epitaxial structure includes the N-type layer being sequentially formed on substrate, luminescent layer and P-type layer.
S702: reflecting layer and the auxiliary electrode in contact hole are formed on epitaxial structure, makes auxiliary electrode and P-type layer
Insulated from each other, auxiliary electrode with the N electrode of LED flip chip for being electrically connected；Wherein, reflecting layer includes reflection electrode layer, auxiliary
Helping electrode includes the first auxiliary electrode, and auxiliary electrode and reflection electrode layer same layer are formed.
A kind of preferable embodiment, in the technical solution that the embodiment of the present application 2 proposes, reflecting layer further includes electric conductivity
The barrier layer of energy, auxiliary electrode further include the second auxiliary electrode with the setting of barrier layer same layer, and reflection is formed on epitaxial structure
Layer and the auxiliary electrode in contact hole, further includes:
The barrier layer of covering reflection electrode layer, and the second of the first auxiliary electrode of covering are formed on reflection electrode layer
Auxiliary electrode.
A kind of preferable embodiment forms the in the technical solution that the embodiment of the present application 2 proposes on reflecting layer
One insulating layer makes side wall and the bottom of the first insulating layer covering contact hole, and the portion except exposure auxiliary electrode and auxiliary electrode
Divide reflecting layer.
A kind of preferable embodiment, in the technical solution that the embodiment of the present application 1 proposes, the shape on the first insulating layer
At contact electrode layer, contact electrode layer includes the N-type contact electrode and p-type contact electrode of corresponding contact hole, so that N-type contact electricity
Pole and auxiliary electrode connect, and p-type contacts the partially reflecting layer except electrode and auxiliary electrode and connects.
A kind of preferable embodiment, in the technical solution that the embodiment of the present application 2 proposes, above-mentioned preparation method is also wrapped
It includes:
Form second insulating layer on contact electrode layer, make each N-type contact electrode of second insulating layer exposure and
The region of each p-type contact electrode.
Electrode layer is set on second insulating layer, and electrode layer includes P electrode and N electrode, and P electrode is made to contact electricity with p-type
Pole connects, and N electrode and N-type contact electrode connect.
The technical process of preparation LED flip chip is described in detail with a specific example below:
1) it provides one and generates substrate 101, as shown in Figure 13.
2) epitaxial structure 102 is grown on substrate, makes the laminated construction that shines, this shines laminated construction from bottom to top successively
For N-type layer, luminescent layer and P-type layer, as shown in figure 14.
3) it is etched in P-type layer and luminescent layer using etch process, makes to form the contact hole 104 of multiple exposed N-type layers, and
LED flip chip periphery is etched, generation substrate is exposed, as shown in figure 15, (a) show top view, (b) show
The sectional drawing of line segment AA in (a).
4) reflection electrode layer 1031 in reflecting layer 103 is prepared in P-type layer, and auxiliary is prepared in contact hole 104
The first auxiliary electrode 1051 in electrode 105 is being made wherein the first auxiliary electrode 1051 is formed with 1031 same layer of reflection electrode layer
After complete, it is etched around contact hole 104 by etch process, so that the first auxiliary electrode 1051 and reflection electrode layer
1031 separate, and as shown in figure 16, (a) show top view, (b) show the sectional drawing of the line segment AA in (a).
5) barrier layer 1032 in reflecting layer 103 is prepared on reflection electrode layer 1031, and in the first auxiliary electrode
The second auxiliary electrode 1052 in auxiliary electrode 105 is prepared on 1051, so that the second cladding first completely of auxiliary electrode 1052 is auxiliary
Electrode 1051 is helped, as shown in figure 17.
6) the first insulating layer 106 is formed on the barrier layer 1032 in reflecting layer 103, covers the first insulating layer 106
The side wall of contact hole 104 and bottom, and the portion except the second auxiliary electrode 1052 and auxiliary electrode in exposure auxiliary electrode 105
Divide barrier layer 1032, as shown in figure 18.
7) the preparation contact electrode layer 107 on the first insulating layer, as shown in figure 19.
8) preparation second insulating layer 108 on electric electrode layer 107 is being contacted, so that each N-type of the exposure of second insulating layer 108
The region of electrode and each p-type contact electrode is contacted, as shown in figure 20.
9) electrode layer 109, electrode layer are set on the region of second insulating layer 108 and the exposure of second insulating layer 108
109 include P electrode and N electrode, so that P electrode and p-type is contacted electrode 107 and connects, and N electrode and N-type contact electrode contact connect
It connects, as shown in figure 21.
Embodiment 3
The embodiment of the present application 3 provides a kind of LED wafer, including the LED flip chip proposed in embodiment 3.
LED flip chip in the application includes substrate, epitaxial structure layer and the reflection being set in turn on the substrate
Layer, the epitaxial structure include the N-type layer being set in turn on the substrate, luminescent layer, P-type layer, compared with prior art, sheet
The epitaxial structure of application includes the contact hole of multiple exposed N-type layers, and the auxiliary electricity insulated from each other with P-type layer is provided in contact hole
Pole, auxiliary electrode are electrically connected with N electrode；Wherein, auxiliary electrode includes the first auxiliary electrode with the setting of reflecting layer same layer.Due to
First auxiliary electrode and reflecting layer are same layer settings, and material and thickness are consistent with reflecting layer, improve to LED luminescent layer
The reflecting effect of the light of transmitting.
It should also be noted that similar label and letter indicate similar terms in following attached drawing, therefore, once a certain Xiang Yi
It is defined in a attached drawing, does not then need that it is further defined and explained in subsequent attached drawing.
In the description of the present application, it should be noted that term " center ", "upper", "lower", "left", "right", "vertical",
The orientation or positional relationship of the instructions such as "horizontal", "inner", "outside" is to be based on the orientation or positional relationship shown in the drawings, or be somebody's turn to do
Invention product using when the orientation or positional relationship usually put, be merely for convenience of description the application and simplify description, without
It is that the device of indication or suggestion meaning or element must have a particular orientation, be constructed and operated in a specific orientation, therefore not
It can be interpreted as the limitation to the application.In addition, term " first ", " second ", " third " etc. are only used for distinguishing description, and cannot manage
Solution is indication or suggestion relative importance.
In the description of the present application, it is also necessary to which explanation is unless specifically defined or limited otherwise, term " setting ",
" installation ", " connected ", " connection " shall be understood in a broad sense, for example, it may be fixedly connected, may be a detachable connection or one
Connect to body；It can be mechanical connection, be also possible to be electrically connected；It can be directly connected, it can also be indirect by intermediary
It is connected, can be the connection inside two elements.For the ordinary skill in the art, on being understood with concrete condition
State the concrete meaning of term in this application.
Finally, it should be noted that embodiment described above, the only specific embodiment of the application, to illustrate the application
Technical solution, rather than its limitations, the protection scope of the application is not limited thereto, although with reference to the foregoing embodiments to this Shen
It please be described in detail, those skilled in the art should understand that: anyone skilled in the art
Within the technical scope of the present application, it can still modify to technical solution documented by previous embodiment or can be light
It is readily conceivable that variation or equivalent replacement of some of the technical features；And these modifications, variation or replacement, do not make
The essence of corresponding technical solution is detached from the spirit and scope of the embodiment of the present application technical solution.The protection in the application should all be covered
Within the scope of.Therefore, the protection scope of the application shall be subject to the protection scope of the claim.
Claims (11)
1. a kind of LED flip chip, including substrate, the epitaxial structure being sequentially formed on the substrate and reflecting layer, described outer
Prolonging structure includes the N-type layer being sequentially formed on the substrate, luminescent layer, P-type layer, which is characterized in that
The epitaxial structure includes the contact hole of multiple exposures N-type layer, the reflecting layer exposure contact hole, described anti-
Penetrating layer includes reflection electrode layer；
The auxiliary electrode insulated from each other with the P-type layer is formed in the contact hole, the auxiliary electrode is used for and the LED
The N electrode of flip-chip is electrically connected；Wherein, the auxiliary electrode includes the first auxiliary formed with the reflection electrode layer same layer
Electrode；
The reflecting layer further includes the barrier layer of conductive energy, and the barrier layer is formed on the reflection electrode layer,
The barrier layer covers the reflection electrode layer；
The auxiliary electrode further includes the second auxiliary electrode with barrier layer same layer setting, the second auxiliary electrode covering
First auxiliary electrode, and second auxiliary electrode and the N-type layer form Ohmic contact.
2. LED flip chip according to claim 1, which is characterized in that the LED flip chip further includes the first insulation
Layer, first insulating layer are formed on the reflecting layer, and first insulating layer covers side wall and the bottom of the contact hole
Portion, and the part reflecting layer except the exposure auxiliary electrode and the auxiliary electrode.
3. LED flip chip according to claim 2, which is characterized in that the LED flip chip further includes contact electrode
Layer, the contact electrode layer are formed on first insulating layer；
The contact electrode layer includes the N-type contact electrode and p-type contact electrode of the corresponding contact hole, the N-type contact electricity
Pole and the auxiliary electrode connect, and the p-type contact electrode connects with the part reflecting layer except the auxiliary electrode
Touching connection；
The auxiliary electrode is used to contact electrode by the N-type and be electrically connected with the N electrode of the LED flip chip.
4. LED flip chip according to claim 3, which is characterized in that the LED flip chip further includes sequentially forming
Second insulating layer and electrode layer on the contact electrode layer, each N-type contact electricity of second insulating layer exposure
The region of pole and each p-type contact electrode；
The electrode layer includes P electrode and the N electrode, and the P electrode and p-type contact electrode connect, the N electricity
Pole and N-type contact electrode connect.
5. LED flip chip according to claim 1, which is characterized in that the inclination angle range of the first auxiliary electrode be 20~
70 degree.
6. LED flip chip according to claim 1 or 4, which is characterized in that the thickness range of first auxiliary electrode
It is 100~1000 nanometers.
7. a kind of preparation method of LED flip chip characterized by comprising
Epitaxial structure is sequentially formed on substrate, makes the contact hole that multiple exposed N-type layers are formed on the epitaxial structure, it is described outer
Prolonging structure includes the N-type layer being sequentially formed on the substrate, luminescent layer and P-type layer；
Reflecting layer and the auxiliary electrode in the contact hole are formed on the epitaxial structure, make the auxiliary electrode and institute
State that P-type layer is insulated from each other, the auxiliary electrode with the N electrode of the LED flip chip for being electrically connected；Wherein, the reflection
Layer includes reflection electrode layer, and the auxiliary electrode includes the first auxiliary electrode, and the auxiliary electrode and the reflection electrode layer are same
Layer is formed；
The reflecting layer further includes the barrier layer of electric conductivity, and the auxiliary electrode further includes being arranged with the barrier layer same layer
Second auxiliary electrode, second auxiliary electrode and the N-type layer form Ohmic contact；
It is described that the reflecting layer and the auxiliary electrode in the contact hole are formed on the epitaxial structure, also wrap
It includes:
The barrier layer of the formation covering reflection electrode layer on the reflection electrode layer, and covering described first are auxiliary
Help second auxiliary electrode of electrode.
8. the method according to the description of claim 7 is characterized in that
The first insulating layer is formed on the reflecting layer, and first insulating layer is made to cover side wall and the bottom of the contact hole
Portion, and the part reflecting layer except the exposure auxiliary electrode and the auxiliary electrode.
9. according to the method described in claim 8, it is characterized in that,
Contact electrode layer is formed on first insulating layer, the contact electrode layer includes the N-type of the corresponding contact hole
It contacts electrode and p-type contacts electrode, so that N-type contact electrode and the auxiliary electrode connect, the p-type contact electricity
The part reflecting layer except pole and the auxiliary electrode connects.
10. according to the method described in claim 9, it is characterized in that,
Second insulating layer is formed on the contact electrode layer, makes each N-type contact electricity of the second insulating layer exposure
The region of pole and each p-type contact electrode；
Electrode layer is set on the second insulating layer, and the electrode layer includes P electrode and the N electrode, makes the P electrode
It is connected with p-type contact electrode, the N electrode and N-type contact electrode connect.
11. a kind of LED wafer, which is characterized in that including any LED flip chip of claim 1 to 6.
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| JP4259268B2 (en) * | 2003-10-20 | 2009-04-30 | 豊田合成株式会社 | Semiconductor light emitting device |
| CN102194949B (en) * | 2010-03-08 | 2014-04-02 | Lg伊诺特有限公司 | Light emitting device |
| CN104681704A (en) * | 2015-01-30 | 2015-06-03 | 大连德豪光电科技有限公司 | Flip LED (Light Emitting Diode) chip and production method thereof |
| CN104835891A (en) * | 2015-05-12 | 2015-08-12 | 杭州士兰明芯科技有限公司 | Flip led chip and manufacturing method thereof |
| CN103489983B (en) * | 2012-06-11 | 2016-06-29 | 铼钻科技股份有限公司 | Flip-chip light emitting diode and manufacturing method and application thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4259268B2 (en) * | 2003-10-20 | 2009-04-30 | 豊田合成株式会社 | Semiconductor light emitting device |
| CN102194949B (en) * | 2010-03-08 | 2014-04-02 | Lg伊诺特有限公司 | Light emitting device |
| CN103489983B (en) * | 2012-06-11 | 2016-06-29 | 铼钻科技股份有限公司 | Flip-chip light emitting diode and manufacturing method and application thereof |
| CN104681704A (en) * | 2015-01-30 | 2015-06-03 | 大连德豪光电科技有限公司 | Flip LED (Light Emitting Diode) chip and production method thereof |
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Application publication date: 20180306 Assignee: JIANGXI QIANZHAO PHOTOELECTRIC Co.,Ltd. Assignor: Xiamen Changelight Co.,Ltd. Contract record no.: X2020350000040 Denomination of invention: The invention relates to an LED flip chip, a preparation method and an LED chip Granted publication date: 20191022 License type: Common License Record date: 20200812 |