CN107767906A - A kind of magnetic RAM - Google Patents
A kind of magnetic RAM Download PDFInfo
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- CN107767906A CN107767906A CN201610716478.3A CN201610716478A CN107767906A CN 107767906 A CN107767906 A CN 107767906A CN 201610716478 A CN201610716478 A CN 201610716478A CN 107767906 A CN107767906 A CN 107767906A
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- different
- fet
- magnetic ram
- storage bit
- mtj
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1653—Address circuits or decoders
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Mram Or Spin Memory Techniques (AREA)
Abstract
The invention discloses a kind of magnetic RAM, the magnetic RAM includes the storage bit of at least two working frequencies, the storage bit includes MTJ, plain conductor and FET, the storage bit of the different operating frequency MTJ diameter dimension is identical but the width of FET is different, or the MTJ diameter dimension of the storage bit of different operating frequency is different but the width of FET is identical.The storage bit of the magnetic RAM different frequency of the present invention is located on same chip, can raise memory operation frequencies with the lifting of processor arithmetic speed and data throughout, so as to the integral working of lifting system；The working frequency of memory can be downgraded according to the actual requirements in processor relative free again, so as to reduce system overall voltage, heating and operating power consumption and lift the service life and reliability of memory.
Description
Technical field
Present invention design memory technology field, more particularly to a kind of magnetic RAM.
Background technology
In recent years, the gap of working frequency widens year by year between processor and memory, and the working frequency of memory is
As the bottleneck of limitation computer system data process performance lifting.For example the central processing unit of computer typically all has one
Fixed overclocking ability, but the operating frequency range of the memory such as internal memory is limited, hinders the working frequency lifting of central processing unit.
The working frequency of memory depends on storage bit physical attribute in itself, therefore, from high-frequency work ability and wider
The memory that the frequency domain that works stores bit effectively help system can lift operational performance.
Secondly, with the development of the new technologies such as big data, cloud computing and Internet of Things, energy consumption, which turns into, weighs a data operation
With the important indicator of processing system.If memory maintains specific work always regardless of the size of data transfer and writing
Operation at frequencies, not only it is difficult to the needs for meeting system operations task real-time change, influences systematic function performance, also can be in entirety
The energy consumption of upper increase memory.
In addition, the preparation of currently stored bit mostly manufactures for specific working frequency, its technique and design parameter are all
Optimized for specific working frequency.If it is written and read for a long time using different working frequencies, inevitable logarithm
According to stability and reliability be negatively affected.
The content of the invention
It is an object of the invention to provide a kind of magnetic RAM, the magnetic RAM possesses compound work
Frequency, the shortcomings that memory of current particular job frequency domain can be avoided, and lift computing system overall performance, reduce energy consumption simultaneously
Lift the reliability and stability of data.
To achieve these goals, technical solution of the present invention is as follows：
A kind of magnetic RAM, the magnetic RAM include the storage bit of at least two working frequencies,
The storage bit includes MTJ, plain conductor and FET, the magnetic of the storage bit of the different operating frequency
Property tunnel knot diameter dimension is identical but the width of FET is different, or the MTJ of the storage bit of different operating frequency
Diameter dimension is different but the width of FET is identical.
A kind of implementation of the present invention, the storage bit include a MTJ and a FET, no
But the width of FET difference identical with the MTJ diameter dimension of the storage bit of working frequency, or different operating frequency
The MTJ diameter dimension of the storage bit of rate is different but the width of FET is identical.
Another implementation of the present invention, the storage bit include a MTJ and at least two field-effects
Pipe, by selecting the FET of connection to realize different working frequencies.
Further, the width of the FET is different, by selecting the different FET of width to realize not respectively
Same working frequency.
Or, the width of the FET it is identical, by selecting different number FETs to realize different working frequencies.
Another implementation of the present invention, the storage bit include at least two MTJs and a field-effect
Pipe, the diameter dimension of the MTJ is different, by selecting different FETs to realize different working frequencies.
Further, the storage bit for possessing different operating frequency is integrated in same magnetic RAM core
On piece.
Further, storage address corresponding to the storage bit of the different operating frequency is in magnetic RAM chip
On line number it is different.
Or, the different operating frequency storage bit corresponding to row of the storage address on magnetic RAM chip
Number is different.
The present invention proposes a kind of magnetic RAM, and the magnetic RAM includes at least two working frequencies
Magnetic random stores bit, and the memory for possessing Multi-Frequency storage bit can lift computing system overall performance, drop
Low energy consumption and the reliability and stability for lifting data.The beneficial effects of the present invention are：(1) based on the storage bit structure
Memory can realize all advantage of magnetic RAM (MRAM), such as fast reading and writing, unlimited access, anti-spoke
Penetrate, heat endurance is good etc..(2) the storage bit for possessing different operating frequency is integrated with, can be real under different working frequencies
The read-write operation now optimized, to meet the needs of central processor frequency conversion is to memory different operating frequency.(3) magnetic is deposited
Storage space meta structure can realize wider working band and adjustable working frequency, both can be with processor arithmetic speed sum
Memory operation frequencies are raised according to the lifting of handling capacity, so as to the integral working of lifting system；Again can be in processor
The working frequency of memory is downgraded during relative free according to the actual requirements, so as to reduce system overall voltage, heating and work
Energy consumption and the service life and reliability for lifting memory.In summary, the magnetic storage bit for possessing compound working frequency
Structure can be applied to the large-scale data center memory sensitive to energy consumption and radiating or make every effort to the mobile device of low energy consumption
On memory.
Brief description of the drawings
Fig. 1 is the structural representation that magnetic random stores bit；
Fig. 2 a are the first arrangement mode of storage address corresponding to present invention storage bit；
Fig. 2 b are second of arrangement mode of storage address corresponding to present invention storage bit；
Fig. 2 c are the third arrangement mode of storage address corresponding to present invention storage bit；
Fig. 2 d are the 4th kind of arrangement mode of storage address corresponding to present invention storage bit；
Fig. 3 is a kind of storage bit structural representation of the embodiment of the present invention；
Fig. 4 is another storage bit structural representation of the embodiment of the present invention.
Embodiment
Technical solution of the present invention is described in further details with reference to the accompanying drawings and examples, following examples are not formed
Limitation of the invention.
As shown in figure 1, magnetic random storage bit includes wordline WL, bit line BL, source line SL, MTJ MTJ, field effect
Should pipe MOSFET.The critical write current value of magnetic random storage bit raises with the rise of working frequency, and critical current
Increase with the increase of FET width；On the other hand, critical write current value contracts with the diminution of MTJ diameter dimensions
Write.Therefore, in summary principle, can be realized by two ways in the storage bit structure of correlation in the present embodiment compound
Working frequency；1) width dimensions of FET are changed；2) MTJ diameter dimension is changed.
Based on above-mentioned principle, a kind of magnetic RAM of the present invention, the magnetic RAM includes at least two works
The storage bit of working frequency, wherein storage bit includes MTJ, plain conductor and FET, different operating frequency
The MTJ diameter dimension of storage bit is identical but the width of FET is different, or the storage bit of different operating frequency
Diameter dimension it is different but the width of FET is identical.
It should be noted that plain conductor includes wordline WL, bit line BL, source line SL, row address and column address correspond to wordline
WL and bit line BL, by selecting row address and column address to select different storage bits, repeat no more below.
Embodiment 1：Magnetic storage bit includes 1 MTJ module and 1 FET.
The present embodiment information is stored in MTJ modules, and " 1 " and " 0 " two kinds of information are marked with the height of magneto-resistor resistance；It is logical
Cross and flow through the spin transfer torque effect of electric current in MTJ tunnel knot and can change the resistance of tunnel knot, realize storage information
Rewriting；FET provides driving current for MTJ programming and is responsible for the selection switching of information bit in read-write.
Because the critical write current value for storing bit raises with the rise of working frequency, and critical current is imitated with field
Should pipe width increase and increase；On the other hand, critical write current value is abridged with the diminution of MTJ diameter dimensions.Therefore, it is comprehensive
Principles above is closed, compound work frequency can be realized in the storage bit structure of correlation by two ways in the present embodiment
Rate；1) width dimensions of FET are changed；2) MTJ diameter dimension is changed.
I.e. in the case of MTJ diameter dimension identicals, change the width dimensions of FET to reach with different operating
The storage bit of frequency, have the working frequency of the storage bit of the FET of same widths size identical, there are different width
The working frequency for spending the storage bit of the FET of size is different.Or in the FET with same widths size
Under, change MTJ diameter dimension to reach the storage bit with different operating frequency, there is depositing for identical MTJ diameter dimensions
Storage space member has identical working frequency, has its working frequency of the storage bit of different MTJ diameter dimensions different.So as to pass through
Change the width dimensions of MTJ diameter dimensions or FET to cause the storage bit with different operating frequency in memory.
In addition, the storage bit that the present embodiment possesses different operating frequency is integrated on same memory chip.Root
According to being actually needed, working frequency is set to n class (n>=2).Possess being placed with for the storage bit of different operating frequency
Two ways：1) as shown in Fig. 2 a, Fig. 2 b, columns is only changed, according to the different working frequency of column address different choice.2) as schemed
Shown in 2c, Fig. 2 d, only change line number, according to the different working frequency of the different choice of row address.
Embodiment 2：Magnetic storage bit includes 1 MTJ module and multiple FETs.
Same information is stored in MTJ modules, and " 1 " and " 0 " two kinds of information are marked with the height of magneto-resistor resistance；Pass through stream
Spin transfer torque effect through electric current in MTJ tunnel knot can change the resistance of tunnel knot, realize changing for storage information
Write；FET provides driving current for MTJ programming and is responsible for the selection switching of information bit in read-write.
As shown in figure 3, in the present embodiment, magnetic storage bit includes 1 MTJ module and multiple FETs.Such as one
Individual storage bit realizes that n FET is shared by the n FET MOSFET with different width dimensions and a MTJ
One MTJ.Change driving current value by changing MOSFET width, finally realize different working frequencies.
In the present embodiment, each storage bit can be arranged to the different working frequency of n kinds, in the application of reality
In, each bit that stores is different according to selected bit line, and the different FET MOSFET of connection realize different work
Frequency.Such as each two FETs of MTJ connections, then the storage bit can realize two kinds of working frequencies.Two field-effects
The width of pipe is different, as long as wordline WL is different, just corresponding different FET, realizes different working frequencies.Another kind side
Formula, the width of two FETs is identical, and it is a kind of working frequency only to meet a wordline WL, while it is another to connect two wordline WL
A kind of working frequency.
There is two ways to arrange the storage bit for possessing different operating frequency in the present embodiment：1) such as Fig. 2 a, figure
Shown in 2b, only change columns, according to the different working frequency of column address different choice.2) as shown in Fig. 2 c, Fig. 2 d, only change is gone
Number, according to the different working frequency of the different choice of row address.
Embodiment 3：Magnetic storage bit includes multiple MTJ modules and 1 FET.
Similarly, information is stored in MTJ modules, and " 1 " and " 0 " two kinds of information are marked with the height of magneto-resistor resistance；It is logical
Cross and flow through the spin transfer torque effect of electric current in MTJ tunnel knot and can change the resistance of tunnel knot, realize storage information
Rewriting；FET provides driving current for MTJ programming and is responsible for the selection switching of information bit in read-write.
As shown in figure 4, in the present embodiment, magnetic storage bit includes n MTJ and field with different-diameter size
Effect pipe, the MTJ of different-diameter size share a FET MOSFET.Changed by changing MTJ diameter dimension
Critical driving current value, finally realize different storage bit working frequencies.
In the present embodiment, because the bit line BL of connection is different, the MTJ of selection difference, the working frequency of bit is stored
It is different.When needing the different working frequency of n kinds, the shared FET MOSFET of n MTJ is set to realize.
There is two ways to arrange the storage bit for possessing different operating frequency in the present embodiment：1) such as Fig. 2 a, figure
Shown in 2b, only change columns, according to the different working frequency of column address different choice.2) as shown in Fig. 2 c, Fig. 2 d, only change is gone
Number, according to the different working frequency of the different choice of row address.
It should be noted that the present embodiment memory selects use to possess corresponding spy according to the change of memory operation frequencies
The storage bit structure of working frequency is levied, therefore, memory operation frequencies are variable, but the same time is only using a work frequency
Rate.
The above embodiments are merely illustrative of the technical solutions of the present invention rather than is limited, without departing substantially from essence of the invention
In the case of refreshing and its essence, those skilled in the art, which work as, can make various corresponding changes and become according to the present invention
Shape, but these corresponding changes and deformation should all belong to the protection domain of appended claims of the invention.
Claims (9)
1. a kind of magnetic RAM, it is characterised in that the magnetic RAM includes at least two working frequencies
Bit is stored, the storage bit includes MTJ, plain conductor and FET, the storage of the different operating frequency
The MTJ diameter dimension of bit is identical but the width of FET is different, or the magnetic of the storage bit of different operating frequency
Property tunnel knot diameter dimension it is different but the width of FET is identical.
2. magnetic RAM according to claim 1, it is characterised in that the storage bit includes a magnetic tunnel
Road knot and a FET, the storage bit of different operating frequency MTJ diameter dimension is identical but FET
Width is different, or the MTJ diameter dimension difference of storage bit but the width phase of FET of different operating frequency
Together.
3. magnetic RAM according to claim 1, it is characterised in that the storage bit includes a magnetic tunnel
Road knot and at least two FETs, by selecting the FET of connection to realize different working frequencies.
4. magnetic RAM according to claim 3, it is characterised in that the width of the FET is different, leads to
Cross the FET for selecting width different respectively and realize different working frequencies.
5. magnetic RAM according to claim 3, it is characterised in that the width of the FET is identical, leads to
Cross and select different number FETs to realize different working frequencies.
6. magnetic RAM according to claim 1, it is characterised in that the storage bit includes at least two magnetic
Property a tunnel knot and FET, the diameter dimension of the MTJ is different, by selecting different FETs real
Existing different working frequency.
7. magnetic RAM according to claim 1, it is characterised in that the storage for possessing different operating frequency
Bit is integrated on same magnetic RAM chip.
8. magnetic RAM according to claim 7, it is characterised in that the storage bit of the different operating frequency
Line number of the corresponding storage address on magnetic RAM chip is different.
9. magnetic RAM according to claim 7, it is characterised in that the storage bit of the different operating frequency
Columns of the corresponding storage address on magnetic RAM chip is different.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610716478.3A CN107767906A (en) | 2016-08-23 | 2016-08-23 | A kind of magnetic RAM |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610716478.3A CN107767906A (en) | 2016-08-23 | 2016-08-23 | A kind of magnetic RAM |
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| Publication Number | Publication Date |
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| CN107767906A true CN107767906A (en) | 2018-03-06 |
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| CN201610716478.3A Pending CN107767906A (en) | 2016-08-23 | 2016-08-23 | A kind of magnetic RAM |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110213432A (en) * | 2019-05-13 | 2019-09-06 | 惠州Tcl移动通信有限公司 | A kind of setting method of working frequency of chip, mobile terminal and storage medium |
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| CN1505043A (en) * | 2002-12-05 | 2004-06-16 | ������������ʽ���� | Nonvolatile memory cell and non-volatile semiconductor memory device |
| US20120241828A1 (en) * | 2011-03-24 | 2012-09-27 | Seung Hyun Lee | Semiconductor memory device and manufacturing method thereof |
| CN104520934A (en) * | 2012-08-10 | 2015-04-15 | 高通股份有限公司 | Monolithic multi-channel adaptable STT-MRAM |
| CN104620319A (en) * | 2012-09-13 | 2015-05-13 | 高通股份有限公司 | Otp scheme with multiple magnetic tunnel junction devices in a cell |
-
2016
- 2016-08-23 CN CN201610716478.3A patent/CN107767906A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1505043A (en) * | 2002-12-05 | 2004-06-16 | ������������ʽ���� | Nonvolatile memory cell and non-volatile semiconductor memory device |
| US20120241828A1 (en) * | 2011-03-24 | 2012-09-27 | Seung Hyun Lee | Semiconductor memory device and manufacturing method thereof |
| CN104520934A (en) * | 2012-08-10 | 2015-04-15 | 高通股份有限公司 | Monolithic multi-channel adaptable STT-MRAM |
| CN104620319A (en) * | 2012-09-13 | 2015-05-13 | 高通股份有限公司 | Otp scheme with multiple magnetic tunnel junction devices in a cell |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110213432A (en) * | 2019-05-13 | 2019-09-06 | 惠州Tcl移动通信有限公司 | A kind of setting method of working frequency of chip, mobile terminal and storage medium |
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Application publication date: 20180306 |