CN107749410A - Ambient light sensor, display panel and display device - Google Patents
Ambient light sensor, display panel and display device Download PDFInfo
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- CN107749410A CN107749410A CN201710866545.4A CN201710866545A CN107749410A CN 107749410 A CN107749410 A CN 107749410A CN 201710866545 A CN201710866545 A CN 201710866545A CN 107749410 A CN107749410 A CN 107749410A
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- ambient light
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- film transistor
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- 239000010409 thin film Substances 0.000 claims abstract description 57
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- 150000004706 metal oxides Chemical class 0.000 claims description 5
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- 229910052737 gold Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/4204—Photometry, e.g. photographic exposure meter using electric radiation detectors with determination of ambient light
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
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- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
Present disclose provides a kind of ambient light sensor, the ambient light sensor includes：Transparent electrode layer, for receiving the ambient light；Thin film transistor (TFT), the grid of the thin film transistor (TFT) are oppositely arranged with the transparent electrode layer；Photoinduction layer, directly contacted between the thin film transistor (TFT) and the transparent electrode layer, and with the grid.Present disclose provides a kind of new photoelectric current to detect structures and methods, on the one hand, using bottom electrode of the TFT grid as the ambient light sensor, eliminates the manufacture craft and material of bottom electrode, saves manufacturing cost；On the other hand, by setting the different threshold voltages on grid, the detection to less photo-signal in ambient light sensor is realized, improves detection efficiency and the comfort level of user.
Description
Technical field
This disclosure relates to display technology field, in particular to a kind of ambient light sensor, includes ambient light sensor
Display panel and display device.
Background technology
In the information-based and intelligentized epoch, increasing intelligent terminal enters daily life, for example,
Smart mobile phone, tablet personal computer, LCD TV etc., provided convenience for the life of people.For the intelligence with display screen eventually
For end equipment, high brightness is kept to increase energy consumption for a long time, and low-light level can influence image quality and the comfort level of user.
In order to solve the problem, people are by detecting the intensity of ambient light, according to the strong and weak regulation intelligent terminal of ambient light
The brightness of equipment, to improve users'comfort and reduce energy consumption.But ambient light sensor of the prior art, shown in reference picture 1,
It is made up of photoelectric sensor 10 and thin film transistor (TFT) 11 (Thin film transistor, abbreviation TFT), shown photoelectric sensor
10 bottom electrode 103 is coupled to source electrode 111 or the drain electrode 112 of thin film transistor (TFT) 11, and photoelectric current is defeated from the photoelectric sensor 10
After going out, conduct to thin film transistor (TFT) 11 with detected.But photoelectric sensor 10 is prepared respectively and thin film transistor (TFT) 11 adds
Manufacturing process and manufacturing cost, if while photo-signal it is too small when, photo-signal can not be detected by ambient light detectors,
And then it have impact on the performance of intelligent terminal.
In consideration of it, there is an urgent need to produce a kind of novel environmental optical sensor, less photo-signal is detected with realizing
And manufacturing process and cost are reduced simultaneously.
It should be noted that information is only used for strengthening the reason to the background of the disclosure disclosed in above-mentioned background section
Solution, therefore can include not forming the information to prior art known to persons of ordinary skill in the art.
The content of the invention
The purpose of the disclosure is to provide a kind of ambient light sensor, display panel and display device, and then at least one
Determine to overcome in degree one or more problem caused by the limitation of correlation technique and defect.
According to the one side of the disclosure, there is provided a kind of ambient light sensor, including：
Transparent electrode layer, for receiving the ambient light；
Thin film transistor (TFT), the grid of the thin film transistor (TFT) are oppositely arranged with the transparent electrode layer；
Photoinduction layer, directly contacted between the thin film transistor (TFT) and the transparent electrode layer, and with the grid.
In a kind of exemplary embodiment of the disclosure, the thin film transistor (TFT) is top gate type thin film transistor or bottom gate type
Thin film transistor (TFT).
In a kind of exemplary embodiment of the disclosure, it is more for non-crystalline silicon, low temperature to form the material of the thin film transistor (TFT)
One or more in crystal silicon or metal oxide.
In a kind of exemplary embodiment of the disclosure, the photoinduction layer is for PN types structure, PIN-type structure or containing thoughts
The single or multiple lift structure of luminescent material.
In a kind of exemplary embodiment of the disclosure, the substrate of the ambient light sensor is array base palte or color film base
Plate.
In a kind of exemplary embodiment of the disclosure, the transparent electrode layer directly contacts with the color membrane substrates.
According to the second aspect of the disclosure, there is provided a kind of display panel, the display panel are included in one or more
State ambient light sensor.
In a kind of exemplary embodiment of the disclosure, the threshold voltage of the multiple ambient light sensor is different.
In a kind of exemplary embodiment of the disclosure, the ambient light sensor is located at non-display area or viewing area
Black matrix above.
According to the third aspect of the disclosure, there is provided a kind of display device, the display device include above-mentioned display surface
Plate.
As shown from the above technical solution, ambient light sensor, display panel and the display in disclosure exemplary embodiment
Device at least possesses advantages below and good effect：
Novel environmental optical sensor in the disclosure is made up of transparent upper electrode, photoinduction layer, thin film transistor (TFT), the light
Inductive layer directly contacts with the grid of thin film transistor (TFT), and the grid is also the bottom electrode of the ambient light sensor simultaneously.Light
Photoinduction layer is transmitted into by transparent electrode layer, photoelectric current is produced, the grid of carrier mobility to thin film transistor (TFT), changes grid
Voltage signal, influence the switch of thin film transistor (TFT), ambient light judged by the detection of the ON state current to thin film transistor (TFT)
Brightness.The detection to less photo-signal is on the one hand realized by the novel environmental optical sensor, improves ring
The performance of border optical sensor；On the other hand the making of ambient light sensor bottom electrode is eliminated, reduces manufacturing process and manufacture
Cost.
It should be appreciated that the general description and following detailed description of the above are only exemplary and explanatory, not
The disclosure can be limited.
Brief description of the drawings
Accompanying drawing herein is merged in specification and forms the part of this specification, shows the implementation for meeting the disclosure
Example, and be used to together with specification to explain the principle of the disclosure.It should be evident that drawings in the following description are only the disclosure
Some embodiments, for those of ordinary skill in the art, on the premise of not paying creative work, can also basis
These accompanying drawings obtain other accompanying drawings.In the accompanying drawings：
Fig. 1 shows a kind of structural representation of ambient light sensor in the prior art；
Fig. 2 shows a kind of structural representation of ambient light sensor in the exemplary embodiment of the disclosure；
Fig. 3 shows a kind of structural representation of ambient light sensor in the exemplary embodiment of the disclosure；
Fig. 4 shows the current diagram of the exemplary embodiment ambient light sensor of the disclosure；
Fig. 5 shows a kind of structural representation of ambient light sensor in the exemplary embodiment of the disclosure；
Fig. 6 shows a kind of structural representation of ambient light sensor in the exemplary embodiment of the disclosure；
Fig. 7 shows a kind of structural representation of ambient light sensor in the exemplary embodiment of the disclosure；
Fig. 8 shows a kind of structural representation of display panel in the exemplary embodiment of the disclosure；
Fig. 9 shows a kind of structural representation of display panel in the exemplary embodiment of the disclosure.
Embodiment
Example embodiment is described more fully with referring now to accompanying drawing.However, example embodiment can be with a variety of shapes
Formula is implemented, and is not understood as limited to example set forth herein；On the contrary, these embodiments are provided so that the disclosure will more
Fully and completely, and by the design of example embodiment comprehensively it is communicated to those skilled in the art.Described feature, knot
Structure or characteristic can be incorporated in one or more embodiments in any suitable manner.In the following description, there is provided permitted
More details fully understand so as to provide to embodiment of the present disclosure.It will be appreciated, however, by one skilled in the art that can
Omitted with putting into practice the technical scheme of the disclosure one or more in the specific detail, or others side can be used
Method, constituent element, device, step etc..In other cases, be not shown in detail or describe known solution a presumptuous guest usurps the role of the host to avoid and
So that each side of the disclosure thickens.
In this specification using term "one", " one ", "the" and " described " to represent to exist one or more elements/
Part/etc.；Term " comprising " and " having " is representing the open meaning being included and refer to except listing
Key element/part/also may be present outside waiting other key element/part/etc.；Term " first " and " second " etc. are only made
Used for mark, be not the quantity limitation to its object.
In addition, accompanying drawing is only the schematic illustrations of the disclosure, it is not necessarily drawn to scale.Identical accompanying drawing mark in figure
Note represents same or similar part, thus will omit repetition thereof.Some block diagrams shown in accompanying drawing are work(
Can entity, not necessarily must be corresponding with physically or logically independent entity.These work(can be realized using software form
Energy entity, or these functional entitys are realized in one or more hardware modules or integrated circuit, or at heterogeneous networks and/or place
These functional entitys are realized in reason device device and/or microcontroller device.
A kind of ambient light sensor is provide firstly in the present exemplary embodiment, the ambient light referring now to Fig. 2 to the disclosure
The structure and the course of work of sensor are illustrative.
As shown in Fig. 2 the ambient light sensor 200 is provided with transparent electrode layer 201, photoinduction along light incident direction
Layer 202, thin film transistor (TFT) 203.The transparent electrode layer 201 is used to receive the ambient light, the grid of the thin film transistor (TFT) 203
Pole 204 is oppositely arranged with the transparent electrode layer 201, and the photoinduction layer 202 is arranged on the transparent electrode layer 201 and described
Between thin film transistor (TFT) 203, and directly contacted with the grid 204.
The transparent electrode layer 201 can be formed using arbitrary transparent conductive material, arbitrary transparent conductive material bag
Include metal material or metal oxide materials, the metal material can be Cu, Fe, Ni, Ag, Au or Pt, the transparency electrode
Layer 201 can be the metal nanometer line reticulated conductive film formed using above-mentioned metal material；The metal oxide materials can
To be transparent conductive oxide, such as FTO, ITO, ZTO, it is preferable that the transparent electrode layer 201 is ito transparent electrode.
The photoinduction layer 202 can be inorganic material or organic material.The inorganic material can be ability
The conventional photosensitive material in domain, such as：Silicon, germanium, cadmium sulfide etc., its existence form can be nano particle, nano wire, nanometer rods etc..
The organic material can be photosensitive material commonly used in the art, such as azobenzene derivatives.Listed above is only exemplary theory
It is bright, the restriction to the disclosure is not used to, those skilled in the art should know that any photosensitive material is used equally for forming this public affairs
Photoinduction layer in opening.
The thin film transistor (TFT) 203 can be top gate type thin film transistor or bottom gate thin film transistor, and doping type can
To be N-type or p-type, specific structure and doping type can be specifically chosen according to the direction being actually needed with incident light；Together
Shi Suoshu thin film transistor (TFT)s 203 can be formed by inorganic material or organic material, such as using α-Si, low temperature polycrystalline silicon, Ge, CdS,
The inorganic material such as CdSe, InSb, metal oxide (ZnO, ZIO etc.), such as polythiophene, pentacene organic material can also be used
Form thin film transistor (TFT), it is preferable that the thin film transistor (TFT) is formed using Si.
Further, the thin film transistor (TFT) 203 includes grid 204, gate insulation layer 205, active layer 206, the and of source electrode 207
Drain electrode 208, the thin film transistor (TFT) 203 are arranged on the top of array base palte 210, the active layer 206 and the array base palte 210
Between barrier layer 209 can be set, prevent the foreign ion in the array base palte 210 from migrating to the active layer 206, to institute
The performance for stating thin film transistor (TFT) 203 has an impact.Wherein, the array base palte 210 can be glass substrate or flexible base board, institute
Stating glass substrate can be glass substrate commonly used in the art or be covered with the glass substrate of color film, and the flexible base board can be with
It is that the flexible materials such as polyimides, polyether-ether-ketone process the substrate to be formed；The barrier layer 209 can be inorganic material, such as oxygen
SiClx, silicon nitride etc. or organic material, such as PVC, PET, PC, it will be appreciated by those skilled in the art that all can
Realize that the material of barrier foreign ion diffusion is used equally for being formed the barrier layer in the disclosure, therefore will not be repeated here.
The ambient light sensor 200 includes transparent electrode layer 201, light sensation successively from top to bottom along light incident direction
Layer 202, top gate type thin film transistor 203, barrier layer 209 and array base palte 210 are answered, light is entered by transparent electrode layer 201
Photosensitive layer 202, photoelectric current is produced, holoe carrier flows to the grid 204, and the voltage signal of grid 204 changes, control
The open and close of the top gate type thin film transistor 203.
Further, the threshold voltage that can set grid 204 is+9.8V, when extraneous no light, the film crystal
Pipe 203 is closed mode；It is that photoinduction layer 202 produces photoelectric current when extraneous light irradiation reaches certain numerical value, holoe carrier is moved
Grid 204 is moved to, improves grid voltage, when grid voltage rises to+10V, the thin film transistor (TFT) 203 is opening,
Export an ON state current and conduct to detection circuit, realize the detection to current signal.
Photoinduction layer in the novel environmental optical sensor of the disclosure directly contacts with the grid of the thin film transistor (TFT), leads to
The voltage signal of the mobile change grid of carrier is crossed, further controls the open and close of thin film transistor (TFT).Pass through this
The new ambient light sensor of kind, on the one hand eliminates the manufacture of ambient light sensor bottom electrode, saves manufacturing process and subtract
Manufacturing cost is lacked；On the other hand, realize what thin film transistor (TFT) was opened and closed by changing the voltage signal of the grid
Control, because the threshold voltage on thin film transistor (TFT) is known, therefore novel environmental optical sensor realization pair can be passed through
The detection of less photo-signal, and then improve ambient light sensor and the performance of display device and the comfort level of user.
Fig. 3 shows the structural representation of the ambient light sensor containing PIN structural, the edge of ambient light sensor 300
Incident light direction and be followed successively by transparent electrode layer 301, N-type layer 302, I types layer 303, P-type layer 304, thin film transistor (TFT) 305, barrier
Layer 306 and array base palte 307, wherein N-type layer 302, I types layer 303, P-type layer 304 form photoinduction layer 313, the film crystal
Pipe 305 includes grid 308, gate insulation layer 309, active layer 310, the cross-sectional area of the active layer 310 successively from top to bottom
More than the grid 308 and the cross-sectional area of gate insulation layer 309, source electrode 311 and drain electrode 312 are respectively coupled to active layer 310
The left and right sides.
Meanwhile Fig. 4 shows the circuit diagram of ambient light sensor 300, by N-type layer 302, I types layer 303, P-type layer
The 304 diode D formed are reversed connection, wherein the P-type layer 304 directly contacts with the grid 308, when in diode D
When generating photoelectric current, holoe carrier is migrated to grid 308, is improved grid voltage so that the thin film transistor (TFT) 305 is opened, is made
It exports an ON state current and detected circuit detection.
In addition, Fig. 5 shows the structural representation of the ambient light sensor containing PN, itself and the environment shown in Fig. 3
Being different only in that for optical sensor eliminates I type layers, forms photoinduction layer by N-type layer 502 and P-type layer 503, grid 504, grid are exhausted
Edge layer 505, active layer 506, source electrode 509, the composition thin film transistor (TFT) 511 of drain electrode 510, the source electrode 509 and drain electrode 510 are coupled to
The active layer 506；The thin film transistor (TFT) 511 is located on array base palte 508, and barrier layer 507 is arranged on the active layer 506
Between the array base palte 508.Light generates photoelectric current, wherein hole carries by entering photoinduction layer after transparency conducting layer 501
Stream migrates to grid 504 open and close for controlling thin film transistor (TFT).
Fig. 6 shows the structural representation of the ambient light sensor containing optoelectronic induction material, wherein positioned at transparency electrode
Photoinduction layer 602 between layer 601 and thin film transistor (TFT) 603 is the layer added with your inductive material, the optoelectronic induction material
It can be the one or more in nanocrystal silicon particle, Ge particle, Nano cadmium sulphide particle, azobenzene derivatives, also may be used
To be any combination of other any photosensitive materials.The photoinduction layer 602 can have single or multiple lift structure, can in every layer
The optoelectronic induction material differed comprising particle size, species.The thin film transistor (TFT) 603 includes grid successively from top to bottom
604th, gate insulation layer 605, active layer 606, the cross-sectional area of the active layer 606 are more than the grid 604 and gate insulation layer
605 cross-sectional area, source electrode 607 and drain electrode 608 are respectively coupled to the left and right sides of active layer 606.The thin film transistor (TFT)
603 can be located on array base palte 610, and barrier layer 609 is arranged between the active layer 606 and the array base palte 610.
The thin film transistor (TFT) can also be bottom gate thin film transistor, and Fig. 7 shows that one kind has color film glass substrate
Ambient light sensor, the ambient light sensor 700 from top to bottom successively comprising bottom gate thin film transistor 701, photoinduction
Layer 702, transparent electrode layer 703 and color film glass substrate 704, the thin film transistor (TFT) 701 include source electrode 705, drain electrode 706, had
Active layer 707, gate insulation layer 708 and grid 709, the source electrode 705 and the drain electrode 706 are coupled to active layer 707 simultaneously, described
Grid 709 and photoinduction layer 702 directly contact, and the transparent electrode layer 703 directly contacts with the color film glass substrate 704.
Incident light can enter the transparent electrode layer 703 from color film glass substrate 704, and then be transmitted into the photoinduction layer 702
Photoelectric current is formed, carrier mobility to grid 709 realizes the control being opened and closed to thin film transistor (TFT) 701.
Similarly, when the thin film transistor (TFT) is bottom gate thin film transistor, photoinduction layer can also be PN types structure,
PIN-type structure or the Rotating fields formed by photosensitive material.
Detection to less photo-signal is realized by novel environmental optical sensor disclosed above, while also saved
Photoelectric sensor bottom electrode has been removed, has reduced manufacturing process and manufacturing cost.Meanwhile in order to realize the inspection to multiple brightness values
Survey, multiple ambient light sensors can be set in the disclosure, the grid in each ambient light sensor has different threshold value electricity
Pressure, threshold voltage can be such as set between 9.1V-9.9V, by multiple thin film transistor (TFT)s the ambient light of varying strength photograph
Lower output ON state current is penetrated to be detected to the brightness value of multiple ambient lights.
A kind of display panel is additionally provided in the present exemplary embodiment, as shown in figure 8, the display panel include one or
Ambient light sensor 800 in multiple disclosure, the ambient light sensor 800 are located at the non-display area of display panel, institute
Stating ambient light sensor 800 can be set around viewing area AA side, both sides, three sides or surrounding.
Meanwhile as shown in figure 9, ambient light sensor 900 can be above viewing area AA black matrix BM, for preventing
Back light produces interference to ambient light sensor, improves precision and reliability that ambient light sensor detects to ambient light,
So that the display panel brightness of display panel automatically adjusted according to the intensity of detected ambient light with reach low energy consumption,
The effect of high image quality, while improve the comfort level of user.
Further, this illustrative embodiments additionally provides a kind of display device, and the display device can include above-mentioned
Display panel.The display device is specifically as follows liquid crystal panel, liquid crystal display, LCD TV, ORGANIC ELECTROLUMINESCENCE DISPLAYS
Oled panel, OLED display, OLED TVs, Electronic Paper or DPF etc. have product or the portion of any display function
Part.
Those skilled in the art will readily occur to the disclosure its after considering specification and putting into practice invention disclosed herein
Its embodiment.The application is intended to any modification, purposes or the adaptations of the disclosure, these modifications, purposes or
Person's adaptations follow the general principle of the disclosure and including the undocumented common knowledges in the art of the disclosure
Or conventional techniques.Description and embodiments are considered only as exemplary, and the true scope of the disclosure and spirit will by right
Ask and point out.
It should be appreciated that the precision architecture that the disclosure is not limited to be described above and is shown in the drawings, and
And various modifications and changes can be being carried out without departing from the scope.The scope of the present disclosure is only limited by appended claim.
Claims (10)
- A kind of 1. ambient light sensor, it is characterised in that including：Transparent electrode layer, for receiving the ambient light；Thin film transistor (TFT), the grid of the thin film transistor (TFT) are oppositely arranged with the transparent electrode layer；Photoinduction layer, directly contacted between the thin film transistor (TFT) and the transparent electrode layer, and with the grid.
- 2. ambient light sensor according to claim 1, it is characterised in that the thin film transistor (TFT) is that top gate type thin film is brilliant Body pipe or bottom gate thin film transistor.
- 3. ambient light sensor according to claim 1 or 2, it is characterised in that form the material of the thin film transistor (TFT) For the one or more in non-crystalline silicon, low temperature polycrystalline silicon or metal oxide.
- 4. ambient light sensor according to claim 1, it is characterised in that the photoinduction layer is PN types structure, PIN-type Structure or the single or multiple lift structure containing optoelectronic induction material.
- 5. ambient light sensor according to claim 1, it is characterised in that the substrate of the ambient light sensor is array Substrate or color membrane substrates.
- 6. ambient light sensor according to claim 5, it is characterised in that the transparent electrode layer and the color membrane substrates Directly contact.
- A kind of 7. display panel, it is characterised in that：Passed comprising one or more ambient lights as described in claim any one of 1-6 Sensor.
- 8. display panel according to claim 7, it is characterised in that the threshold voltage of the multiple ambient light sensor is not Together.
- 9. display panel according to claim 8, it is characterised in that the ambient light sensor be located at non-display area or Above the black matrix of viewing area.
- A kind of 10. display device, it is characterised in that：Include the display panel described in claim any one of 7-9.
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